CN114221101B - Filter with resonator having negative coupling - Google Patents

Filter with resonator having negative coupling Download PDF

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Publication number
CN114221101B
CN114221101B CN202111558242.9A CN202111558242A CN114221101B CN 114221101 B CN114221101 B CN 114221101B CN 202111558242 A CN202111558242 A CN 202111558242A CN 114221101 B CN114221101 B CN 114221101B
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band
resonator
resonators
filter
low
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CN114221101A (en
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S·塔米阿佐
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Commscope Technologies LLC
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Commscope Technologies LLC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/205—Comb or interdigital filters; Cascaded coaxial cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/213—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/213—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
    • H01P1/2133—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies using coaxial filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • H01P11/007—Manufacturing frequency-selective devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/04—Coaxial resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/06—Cavity resonators
    • H01P7/065—Cavity resonators integrated in a substrate

Abstract

A filter having resonators with negative coupling is disclosed. A filter apparatus is provided herein. The filter device includes a plurality of low-band resonators and a plurality of high-band resonators. In some embodiments, adjacent ones of the plurality of high-band resonators are spaced farther apart from each other than adjacent ones of the plurality of low-band resonators.

Description

Filter with resonator having negative coupling
The present application is a divisional application of the invention patent application having the title of "filter with resonator with negative coupling" with the application of 2019, 12, 13 and 201911278405.0.
Cross Reference to Related Applications
The present application claims priority from U.S. provisional patent application Ser. No.62/779,687, filed on day 12, 14, 2018, and U.S. provisional patent application Ser. No.62/796,809, filed on day 1, 2019, each of which is incorporated herein by reference in its entirety.
Technical Field
The present disclosure relates to communication systems, and more particularly to Radio Frequency (RF) filters.
Background
One type of filter used in RF applications is a resonator filter that includes a set of coaxial resonators. The overall transfer function of a resonator filter is a function of the response of the individual resonators and the electromagnetic coupling between different pairs of resonators within the group.
U.S. patent No.5,812,036 ("the' 036 patent"), the entire disclosure of which is incorporated herein by reference, discloses different resonator filters having different configurations and topologies of resonators. Fig. 1A of the present description corresponds to fig. 3 of the' 036 patent, which depicts a top cross-sectional view of a six-stage resonator filter 200 having a 2 x 3 array of cavities between an input terminal 204 and an output terminal 206, with each cavity having a respective resonator (among resonators R1-R6) therein.
Resonator filter 200 has five coupling holes H1-H5 in the wall, the five coupling holes H1-H5 defining cavities between five sequential pairs of resonators R1-R6 that enable primary coupling between the sequential pairs. Further, the resonator filter 200 has a first bypass coupling hole a C1 The first bypass coupling hole A C1 So that cross-coupling in direction Y between non-sequential pairs of resonators R2 and R5 is possible. Resonator filter 200 also has a second bypass coupling hole a C2 The second bypass coupling hole A C2 So that cross-coupling between non-sequential pairs of resonators R1 and R6 is possible. The main coupling between five sequential pairs of resonators and the cross coupling between two non-sequential pairs of resonators contribute to the overall transfer function of resonator filter 200.
Resonator filter 200 also includes a conductive housing 208, where conductive housing 208 defines a portion of an outer conductor of each of resonators R1-R6. The remaining part of each resonator outer conductor is formed by an inner common wall W1, W2, W3, which inner common wall W1, W2, W3 also defines a coupling hole H1-H5 through which the successive ones of the resonators R1-R6 are coupled to each other. Resonators R1-R6 may comprise, for example, gas-filled cavity resonators or dielectrically loaded coaxial resonators.
Fig. 1B of the present specification, corresponding to fig. 4 of U.S. patent publication No.2017/0346148 ("the' 148 publication"), depicts a side cross-sectional view of an in-line resonator filter 400, the in-line resonator filter 400 having five inner conductors 410 (1) -410 (5). The entire disclosure of the' 148 publication is incorporated herein by reference. Each of the inner conductors 410 (1) -410 (5) has (1) a high impedance base 412 shorted to the bottom ground plane 402 and (2) a low impedance, shaped head 414 that does not contact the top ground plane 404. Resonator filter 400 also has a transverse ground plane 406. Also, the inner conductor 410 may function as a step-impedance resonator (SIR).
The five inner conductors 410 (1) -410 (5) of the in-line resonator filter 400 are arranged linearly to form a one-dimensional array of conductors. The inner conductor 410 may be, but need not be, perfectly aligned. One or more of the inner conductors 410 may be shifted toward the front or back of the resonator filter 400 (i.e., into or out of the page of fig. 1B). There may be no intervening walls between adjacent inner conductors 410 in the resonator filter 400, thus enabling more substantial cross-coupling between pairs of non-adjacent inner conductors 410.
Each inner conductor 410 in the resonator filter 400 has a corresponding tuning element 420. Resonator filter 400 also has four additional tuning elements 422 (1) -422 (4) located between corresponding adjacent inner conductors 410, with additional tuning elements 422 (1) and 422 (2) extending from top ground plane 404 and additional tuning elements 422 (3) and 422 (4) extending from bottom ground plane 402.
As shown in fig. 1B, resonator filter 400 has four conductive connectors 418 (1) -418 (4), each providing a physical (i.e., ohmic) connection between different ones of four pairs of adjacent inner conductors 410.
Some of the heads 414 of the inner conductors 410 of the resonator filter 400 have different shapes, and the inter-conductor spacing between the inner conductors 410 varies due to the variation of adjacent pairs. In fig. 1B, heads 414 (1) and 414 (5) may be cup-shaped or fork-shaped, while heads 414 (2) -414 (4) are fork-shaped. Moreover, the height of the inter-conductor connector 418 varies due to variations in adjacent pairs. The resonator filter 400 is asymmetric along its lateral dimension because a 180 degree rotation about a vertical axis, e.g., the base 412 (3) of the inner conductor 410 (3), results in a view that is different from the view of the resonator filter 400 shown in fig. 1B. All of these different and varying characteristics of resonator filter 400 contribute to its overall filter transfer function. Thus, the features may be specifically designed to achieve a desired filter transfer function.
In general, based on the particular design of resonator filter 400, there is both an inductive main coupling and a capacitive main coupling between each of four pairs of adjacent inner conductors 410, where the sign of the capacitive main coupling is opposite to the sign of the inductive main coupling for each pair of inner conductors such that the capacitive main coupling and the inductive main coupling compensate each other to at least some extent. Furthermore, resonator filter 400 has been designed such that non-negligible (e.g., inductive) cross-coupling is between certain pairs of non-adjacent inner conductors 410, wherein non-negligible cross-coupling is achieved without employing discrete bypass connectors that ohmically connect non-adjacent inner conductors 410, whether those bypass connectors are internal or external to resonator filter 400. For example, there may be non-negligible cross-coupling between the inner conductor 410 (1) and the inner conductor 410 (3). Furthermore, there may be a small, but still not negligible, cross-coupling between the inner conductors 410 (1) and 410 (4) or even between the inner conductors 410 (1) and 410 (5). In general, the greater the separation distance between the two inner conductors, the less the coupling strength.
Two basic coupling mechanisms can occur, both contributing to the amount of coupling (capacitive coupling and inductive coupling) between adjacent and non-adjacent inner conductors.
The capacitive coupling may be controlled by adjusting the length and/or impedance of the capacitive head 414 of each inner conductor 410 (e.g., by independently adjusting the dimensions A, B and C of the inner conductors 410 (3)). This interaction will contribute a negative amount of capacitive coupling to adjacent pairs of the inner conductor 410 and a positive amount of capacitive coupling to non-adjacent pairs of the inner conductor.
The inductive coupling may be controlled by adjusting the length D and/or the height E of the inter-conductor connectors 418 connecting different pairs of adjacent inner conductors, wherein the distance and height may vary due to connection variations. This interaction will contribute a positive amount of inductive coupling to both adjacent and non-adjacent pairs of the inner conductor 410.
The capacitive and inductive contributions of the main coupling (i.e., between adjacent conductors) and the cross coupling (i.e., between non-adjacent conductors) may be designed to meet a specified coupling value, at least within a certain range of specified coupling values. For the structure under consideration, the sign of the cross-coupling is always positive, whereas the sign of the main coupling can be conveniently set according to a specific mix of capacitive and inductive coupling. It is possible to implement a hybrid signed coupling and network of coupled resonators.
Different types of in-line resonator filters may be implemented depending on the number and location of input/output (I/O) ports coupled to the appropriately selected inner conductor. An in-line resonator filter such as in-line resonator filter 400 of fig. 1B may be represented by a Ha Erma (Halma) topology, with hal Ma Tapu indicating non-negligible main and cross-coupling between adjacent conductors and non-adjacent conductors.
Disclosure of Invention
According to some embodiments herein, the filter device may comprise a plurality of low-band resonators. Moreover, the filter device may comprise a plurality of high-band resonators having only negative coupling to each other.
In some embodiments, the filter apparatus may include a single machined part or die cast part that includes a plurality of high-band resonators. The first resonator head of a first high-band resonator of the plurality of high-band resonators may be opposite the second resonator head of a second high-band resonator of the plurality of high-band resonators such that the first resonator head and the second resonator head are capacitively coupled to each other. A single machined piece or die cast piece may include a plurality of low band resonators and a housing from which a plurality of high band resonators and a plurality of low band resonators extend. Moreover, the shortest distance between the first resonator head and the second resonator head may be at least 4-6 millimeters (mm).
According to some embodiments, the filter device may comprise a substrate, and the first resonator layer of the filter device may comprise a plurality of high-band resonators and/or a plurality of low-band resonators on a first side of the substrate. Moreover, the second resonator layer of the filter device may be on an opposite second side of the substrate. As with the first resonator layer, the second resonator layer may include a high-band resonator layer and/or a low-band resonator layer. The second resonator layer may be electrically coupled to the first resonator layer by one or more metallized vias extending from the first side of the substrate to the second side of the substrate. Additionally or alternatively, the second resonator layer may be electrically coupled to the first resonator layer by a metallization layer extending from the first side of the substrate to the second side of the substrate. For example, the metal plating may be on a sidewall of the substrate in an opening of the substrate between adjacent ones of the plurality of high-band resonators or between adjacent ones of the plurality of low-band resonators. Thus, the filter device may have a double-sided resonator structure.
According to some embodiments herein, the filter device may comprise a plurality of low-band resonators. Moreover, the filter device may comprise a plurality of high-band resonators. The first resonator head of a first high-band resonator of the plurality of high-band resonators may be opposite the second resonator head of a second high-band resonator of the plurality of high-band resonators such that the first resonator head and the second resonator head are capacitively coupled to each other.
In some embodiments, the shortest distance between the first resonator head and the second resonator head may be at least 4-6 millimeters (mm). Additionally or alternatively, at least one of the first resonator head or the second resonator head may comprise a cut-out region. For example, the filter device may comprise tuning elements in the cut-out region.
According to some embodiments, a third resonator head of a third high-band resonator of the plurality of high-band resonators may be opposite the first resonator head such that the first resonator head and the third resonator head are capacitively coupled to each other. The stem (walk) of a third high-frequency band resonator of the plurality of high-frequency band resonators may be shorter than the stem of a first high-frequency band resonator of the plurality of high-frequency band resonators, and the stem of the third high-frequency band resonator of the plurality of high-frequency band resonators may be shorter than the stem of a second high-frequency band resonator of the plurality of high-frequency band resonators. Also, a fourth resonator head of a fourth high-band resonator of the plurality of high-band resonators may be opposite the third resonator head such that the fourth resonator head and the third resonator head are capacitively coupled to each other. The fourth resonator head may be opposite to a fifth resonator head of a fifth high-band resonator of the plurality of high-band resonators such that the fourth resonator head and the fifth resonator head are capacitively coupled to each other. The third resonator head may be between the second resonator head and the fifth resonator head.
In some embodiments, the filter device may include a tuning element on a stem of a first high-band resonator of the plurality of high-band resonators. Additionally or alternatively, the filter device may comprise a metal housing. The metal housing, the plurality of low-band resonators, and the plurality of high-band resonators together may have a unitary metal structure.
According to some embodiments, the planar surface of a first high-band resonator of the plurality of high-band resonators may be coplanar with the planar surface of a first low-band resonator of the plurality of low-band resonators. The planar surface of a first high-band resonator of the plurality of high-band resonators may have a uniform thickness of at least 5 millimeters (mm). Additionally or alternatively, a first high-band resonator of the plurality of high-band resonators may be shorter than a first low-band resonator of the plurality of low-band resonators.
In some embodiments, adjacent ones of the plurality of high-band resonators may be spaced apart from each other by a first distance that is wider than a second distance by which adjacent ones of the plurality of low-band resonators are spaced apart from each other. Additionally or alternatively, the filter device may include a Radio Frequency (RF) combiner that includes a plurality of low-band resonators and a plurality of high-band resonators.
According to some embodiments herein, the filter device may comprise a plurality of low-band resonators. The filter device may comprise a plurality of high-band resonators. Adjacent resonator heads of the plurality of high-band resonators may be spaced farther apart from each other than adjacent resonator heads of the plurality of low-band resonators. Also, adjacent shanks of the plurality of high-band resonators may be spaced farther apart from each other than adjacent shanks of the plurality of low-band resonators.
In some embodiments, the plurality of high-band resonators may each include a plurality of planar Y-shaped resonators. Additionally or alternatively, adjacent resonator heads of the plurality of low-band resonators may each comprise a planar rectangular resonator head.
According to some embodiments, the electromagnetic coupling between at least three of the plurality of high-band resonators may be only negative coupling. The at least three of the plurality of high-band resonators may include at least two pairs of opposing high-band resonators of the plurality of high-band resonators. Additionally or alternatively, positive coupling between adjacent shanks of an even number of the plurality of high-band resonators may be less than the negative coupling.
According to some embodiments herein, a diplexer filter device may include a low-band filter having only in-line resonators. Moreover, the diplexer filter device may include a high-band filter having opposing resonators.
In some embodiments, the opposing resonators may comprise two sets of oppositely facing in-line resonators. A first resonator of a first set of the two sets may face opposite a second resonator of the first set that is in line with a third resonator of a second set of the two sets. Moreover, the third resonator may be oppositely facing from a fourth resonator of the second set, which is in line with the first resonator. The electromagnetic coupling between the first set and the second set may be only negative coupling.
According to some embodiments, the diplexer filter device may include a single metal piece that includes both the low-band filter and the high-band filter. Additionally or alternatively, adjacent ones of the opposing resonators may be spaced apart from each other by a first distance that is wider than a second distance by which adjacent ones of the resonators that are only in-line are spaced apart from each other.
According to some embodiments herein, the filter device may comprise a low-band filter. The filter device may comprise a high-band filter comprising in-line high-band resonators. The high-band resonators of the columns may be in a single column in the first direction. Also, a first one of the in-line high-band resonators may include a portion extending in the first direction above a portion of a second one of the in-line high-band resonators such that the portion of the first one of the in-line high-band resonators overlaps and capacitively couples with the portion of the second one of the in-line high-band resonators in a second direction perpendicular to the first direction.
In some embodiments, the in-line high-band resonator may be the only high-band resonator of the high-band filter, and the low-band filter may include only the in-line low-band resonator. Additionally or alternatively, a first one of the in-line high-band resonators may be an L-shaped resonator and a second one of the in-line high-band resonators may be a T-shaped resonator or a Y-shaped resonator. Moreover, the filter device may comprise a tuning element between the first and second ones of the in-line high-band resonators.
According to some embodiments, the portion of the second one of the in-line high-band resonators may be a first portion, and the third one of the in-line high-band resonators may include a portion extending in the first direction over the second portion of the second one of the in-line high-band resonators such that the portion of the third one of the in-line high-band resonators overlaps and capacitively couples with the second portion of the second one of the in-line high-band resonators in the second direction. Moreover, the filter device may comprise a tuning element between the first and third of the in-line high-band resonators.
According to some embodiments herein, a filter device may include a low-band filter, a high-band filter, and a first ohmic connection between and electrically coupling the low-band filter and the high-band filter to a common port of the filter device. The low-band filter may comprise an interdigital low-band resonator. The first low-band resonator and the second low-band resonator of the low-band resonators may be electrically coupled to each other through a second ohmic connection.
In some embodiments, the high-band filter may include a first high-band resonator opposite and capacitively coupled to a second high-band resonator of the high-band filter. Also, the high-band filter may include a third high-band resonator opposite and capacitively coupled to the first high-band resonator. The second high-band resonator and the third high-band resonator may be in line with each other.
Drawings
Fig. 1A is a top cross-sectional view of a six-stage resonator filter with a 2 x 3 array of coaxial resonators according to the prior art.
Fig. 1B is a side cross-sectional view of an in-line resonator filter according to the prior art.
Fig. 1C is a side view of a filter apparatus according to an embodiment of the inventive concept.
Fig. 1D is an enlarged view of a high-band resonator of the filter apparatus of fig. 1C.
Fig. 1E is an enlarged view of a low-band resonator of the filter apparatus of fig. 1C.
Fig. 2 is a graph of a response of a filter device according to an embodiment of the inventive concept.
Fig. 3 is a side view of a filter apparatus according to an embodiment of the inventive concept.
Fig. 4 is a side view of a filter apparatus according to an embodiment of the inventive concept.
Fig. 5 is a graph of a response of a filter device according to an embodiment of the inventive concept.
Detailed Description
According to an embodiment of the inventive concept, a filter device such as an RF combiner comprising a resonator filter is provided. The high-band channel of an RF combiner typically includes a filter having a stop band below a pass band. To achieve this efficiently, transmission zeroes at frequencies below the passband can be introduced.
Conventional methods of providing a stop band below a pass band may include the use of cross-coupling and/or suppression cavities (rejection cavities). However, both of these methods may lead to an increase in the number of mechanical parts, which in turn may lead to one or more of the following: higher cost, higher assembly time, higher insertion loss, larger size, etc.
Another conventional approach utilizes hybrid coupling (i.e., both positive and negative coupling) between adjacent coaxial resonators, along with positive parasitic coupling between non-adjacent coaxial resonators, to provide a transmission zero below the passband of the high-band filter. The coupling between the resonators may be adjusted to provide a transmission zero. A disadvantage of this approach is that a relatively small distance (e.g., 3mm or less) between the open (capacitively coupled) ends of adjacent resonators may be required to achieve mixed sign coupling between both adjacent and non-adjacent resonator pairs. For example, this approach may require very high coupling and very small distances between adjacent resonators relative to coupling between non-adjacent resonators. This may make the filter response sensitive to mechanical tolerances, beyond the tuning capabilities of the coupling screw. As an example, referring to fig. 1B, while it may be desirable to place the tuning element between the head 414 (1) and the head 414 (2), the head 414 (1) and the head 414 (2) may lack sufficient space therebetween for the tuning element to be able to tune the resonator.
However, according to embodiments of the inventive concept, a method suitable for high frequencies may involve arranging the shape and position of the resonators in such a way that only (or almost only) negative coupling is used in the entire high-band channel filter. This may achieve a desired/optimized high-band channel response with an acceptable tradeoff between size, mechanical complexity, stop band rejection, and insertion loss. Moreover, in some embodiments, the high-band channel filter may be more robust against mechanical tolerances because the minimum distance between the open ends (open ends) of the high-band resonators may be greater than 4 mm.
By using only negative coupling, a good high-band channel filter can be provided. The use of exclusive negative coupling may be achieved based on the shape and topology of the high-band resonator. For example, the high-band resonators may not be all arranged in a row, and thus an in-line high-band channel filter may not be provided. Instead, the high-band resonators may be arranged and shaped to provide capacitive coupling between adjacent ones and non-adjacent ones of the high-band resonators, but not inductive coupling(s) between the high-band resonators. As used herein, the term "adjacent resonator" refers to a pair of resonators that have no other resonator in between. Conversely, the term "non-adjacent resonator" refers to a pair of resonators having another resonator between them.
Example embodiments of the inventive concepts will be described in more detail with reference to the accompanying drawings.
Fig. 1C is a side view of a filter apparatus 100 according to an embodiment of the inventive concept. As shown in fig. 1C, the filter device 100 may include a first set of resonators 110 (1) -110 (5) and a second set of resonators 110 (6) -110 (10). Although five resonators are shown in each of the two groups, more (i.e., six or more) or fewer (e.g., three or four) resonators may be included in either group. In some embodiments, resonators 110 (1) -110 (5) may be high-band resonators of a high-band channel filter of filter device 100, while resonators 110 (6) -110 (10) may be low-band resonators of a low-band channel filter of filter device 100. For example, the filter device 100 may include an RF combiner (diplexer) that includes high-band resonators 110 (1) -110 (5) of a high-band channel filter and low-band resonators 110 (6) -110 (10) of a low-band channel filter.
The high-band channel filter of the filter device 100 has a stop band below the pass band. The high frequency band may include frequencies ranging from 1.9 gigahertz (GHz) to 2.2GHz, while the low frequency band, which is low relative to the high frequency band, may include frequencies ranging from 1.7-1.9 GHz.
The high-band resonators 110 (1) -110 (5) of the high-band channel filter and the low-band resonators 110 (6) -110 (10) of the low-band channel filter may each extend from the housing 105 in the direction Z. For example, the housing 105 may define a rectangular perimeter around the high-band resonators 110 (1) -110 (5) and the low-band resonators 110 (6) -110 (10). The housing 105 may be a metal housing and the high band resonators 110 (1) -110 (5) and the low band resonators 110 (6) -110 (10) may be shorted to the metal housing. For example, in some embodiments, a single machined piece or die cast piece may include the housing 105, the high band resonators 110 (1) -110 (5) of the high band channel filter, and the low band resonators 110 (6) -110 (10) of the low band channel filter. Thus, the housing 105, the high-band resonators 110 (1) -110 (5), and the low-band resonators 110 (6) -110 (10) may together comprise the same monolithic metal structure.
In some embodiments, the high-band resonators 110 (1) -110 (5) and the low-band resonators 110 (6) -110 (10) may be planar resonators having a substantially uniform thickness in a direction into the page of fig. 1C. For example, the resonators 110 may each be machined from the same planar sheet metal. Thus, the surfaces of resonator 110 shown in fig. 1C may be planar surfaces, which may each have a uniform thickness of at least 5mm, for example. In particular, the planar surface of at least one of the high-band resonators 110 (1) -110 (5) may be coplanar with the planar surface of at least one of the low-band resonators 110 (6) -110 (10) in the X-Z plane shown in fig. 1C.
The direction Z may be perpendicular to the direction X. In some embodiments, the view shown in fig. 1C may be a side view of the filter device 100, and thus the direction Z may be a vertical direction. Alternatively, the view shown in fig. 1C may be a top view of the filter device 100, and the vertical direction may be into the page of fig. 1C. Thus, the filter device 100 may be oriented such that the planar surface of the resonator 110 shown in fig. 1C is facing horizontally outward, or vertically upward if the filter device 100 is rotated ninety degrees. The direction in which the planar surface of resonator 110 faces may be perpendicular to both directions X and Z.
Fig. 1D is an enlarged view of the high-band resonators 110 (1) -110 (5) of the filter apparatus 100 of fig. 1C. The high-band resonators 110 (1) -110 (5) include respective handles 112 (1) -112 (5) and respective resonator heads 114 (1) -114 (5). Resonator head 114 (1) is opposite resonator heads 114 (2) and 114 (3) in direction Z (e.g., on the portion of housing 105 opposite resonator heads 114 (2) and 114 (3)) rather than being in line with resonator heads 114 (2) and 114 (3) in direction X. Similarly, resonator head 114 (4) is opposite resonator heads 114 (3) and 114 (5) in direction Z. Thus, resonator head 114 (1) is capacitively coupled to resonator heads 114 (2) and 114 (3) in direction Z, and vice versa. Similarly, resonator head 114 (4) is capacitively coupled to resonator heads 114 (3) and 114 (5) in direction Z, and vice versa.
Resonator head 114 (3) is also capacitively coupled to resonator heads 114 (2) and 114 (5) in direction X, and vice versa. However, resonator heads 114 (1) and 114 (4) may be spaced far enough apart from each other in direction X that negligible capacitive coupling will occur with respect to each other.
In some embodiments, the electromagnetic coupling between the high-band resonators 110 (1) -110 (5) may be only negative. The exclusive negative coupling is a result of capacitive coupling between adjacent ones and non-adjacent ones of the high-band resonators 110 (1) -110 (5) and the absence of inductive coupling, and is due to the shape and topology of the high-band resonators 110 (1) -110 (5). By having only negative coupling between the high-band resonators 110 (1) -110 (5), a high-band channel filter with good performance can be provided.
Adjacent ones of the resonator heads 114 (1) -114 (5) may be spaced apart from each other by a shortest (e.g., smallest) distance of at least 4-6 mm. For example, resonator heads 114 (2) and 114 (3) may be spaced apart from each other in direction X by a distance D23 of at least 4mm. The distance D23 may be narrower (e.g., 4 mm) or wider (e.g., 6 mm) based on the frequency used with the high-band resonators 110 (1) -110 (5). Resonator heads 114 (3) and 114 (5) may also be spaced apart from each other in direction X by at least 4mm. On the other hand, the resonator heads 114 (2) and 114 (5) have the resonator head 114 (3) therebetween, and thus the resonator heads 114 (2) and 114 (5) are pairs of non-adjacent resonator heads that are aligned with each other in the direction X.
The resonator heads 114 (1) -114 (5) that are adjacent in the direction Z may be spaced apart from each other in the direction Z by at least 6mm. For example, resonator heads 114 (1) and 114 (2) may be spaced apart from each other in direction Z by a distance D12 of at least 6mm. In some embodiments, distance D12 may be longer than distance D23. On the other hand, resonator heads 114 (1) and 114 (5) are pairs of non-adjacent resonator heads, which are diagonally opposite to each other. Similarly, resonator heads 114 (2) and 114 (4) are non-adjacent pairs of resonator heads that are diagonally opposite each other.
As discussed herein with respect to fig. 1C, resonator 110 may be a planar resonator having a substantially uniform thickness. Thus, the stem 112 and resonator head 114 may have substantially no variation in thickness in the direction into the page of fig. 1D. For example, each of the handles 112 and each of the resonator heads 114 may have substantially the same thickness in the range of 5-6 mm. Furthermore, the planar surface of the handle 112 may be coplanar with the planar surface of the resonator head 114 in the X-Z plane.
One or more of the high-band resonators 110 (1) -110 (5) may have a tuning element 120 thereon. For example, tuning element 120 (1) may be on handle 112 (1) of resonator 110 (1). The tuning element 120 (1) may be a metal tuning element or a dielectric (dielectric) tuning element, such as a metal tuning screw (screen) or a dielectric tuning screw. Additionally or alternatively, one or more of the resonator heads 114 (1) -114 (5) may have a cutout region 121 therein for the tuning element 120. As an example, the resonator head 114 (4) may include a cutout region 121 (4), the cutout region 121 (4) being shaped to receive the tuning element 120 as a metal tuning screw.
Advantages of a dielectric tuning element may include its mechanical strength and its dielectric properties. Both the dielectric tuning element and the metal tuning element may change the capacitive coupling(s) between the resonators 110. For negative coupling, the metal tuning element makes the coupling weaker with increasing insertion depth, while the dielectric tuning element makes the coupling stronger with increasing insertion depth.
In some embodiments, two or more of the high-band resonators 110 (1) -110 (5) may overlap each other in a direction into the page of fig. 1D. For example, the resonator heads 114 (1) may overlap at least one of the resonator heads 114 (2) or 114 (3) rather than being spaced apart from each other in the direction Z. This may increase the amount of capacitive coupling. However, it may be more difficult to cast resonator 110 as an overlapping resonator in one piece. Thus, it may be simpler and cheaper to manufacture resonator 110 as a non-overlapping resonator. RF signals of non-overlapping resonators may also be less likely to interfere with each other than RF signals of overlapping resonators. Moreover, casting (e.g., die casting) each of the housing 105 and resonator 110 together as a single piece (which is simpler for non-overlapping resonators) may help reduce Passive Intermodulation (PIM) problems. On the other hand, welding one or more of the resonators 110 to the housing 105 may undesirably introduce PIM problems.
As shown in fig. 1D, the high-band resonators 110 (1) -110 (5) may be Y-shaped resonators. However, the high-band resonators 110 (1) -110 (5) are not limited to Y-shapes. For example, the high-band resonators 110 (1) -110 (5) may be T-shaped resonators or L-shaped resonators that may have corresponding apertures therein (e.g., cut-out regions 121) to receive the tuning element 120.
The high-band resonators 110 (1) -110 (5) may have handles 112 having different lengths in the direction Z. For example, the stem 112 (3) of the resonator 110 (3) may be shorter in the direction Z than the stems 112 (1), 112 (2), 112 (4), and 112 (5). The shorter handle 112 (3) may help provide the desired resonant frequency. As another example, handles 112 (1) and 112 (4) may be longer in direction Z than handles 112 (2), 112 (3), and 112 (5). Although the use of longer handles 112 (1) and 112 (4) may introduce a small inductive (positive) coupling between resonators 110 (1) and 110 (4) in the X-direction, this inductive coupling is also offset by the negative coupling among resonators 110 (1) -110 (5). In some embodiments, there may be small positive coupling(s) between an even number (e.g., two or four) of resonators 110 (1) -110 (5).
On the other hand, negative coupling between resonators on opposite sides of the high-band channel filter in direction Z in resonators 110 (1) -110 (5) may involve an odd number (e.g., three or five) of resonators 110 (1) -110 (5). The odd number may include at least two pairs of opposing high-band resonators of high-band resonators 110 (1) -110 (5). For example, among the three resonators 110 (1) -110 (3), the resonators 110 (1) and 110 (2) provide one pair of opposing resonators, while the resonators 110 (1) and 110 (3) provide the other pair of opposing resonators. Even if there is positive coupling(s) between adjacent shanks 112 of an even number of high-band resonators 110 (1) -110 (5), the total positive coupling(s) is less than the total negative coupling among the high-band resonators 110 (1) -110 (5).
Fig. 1E is an enlarged view of low-band resonators 110 (6) -110 (10) of filter apparatus 100 of fig. 1C. The low-band resonators 110 (6) -110 (10) may include respective handles 112 (6) -112 (10) and respective resonator heads 114 (6) -114 (10). As discussed above with respect to fig. 1C, the resonators 110 may each be planar resonators. The handles 112 (6) -112 (10) and the resonator heads 114 (6) -114 (10) may thus be planar. For example, resonator heads 114 (6) -114 (10) may be planar rectangular resonator heads.
Adjacent ones of the resonator heads 114 (1) -114 (5) (fig. 1D) of the high-band channel filter may be spaced farther apart from each other in the direction X than adjacent ones of the resonator heads 114 (6) -114 (10) of the low-band channel filter. For example, the distance D89 in the direction X between the resonator head 114 (8) and the resonator head 114 (9) may be 3mm or less, while the distance D23 in fig. 1D may be at least 4mm. Moreover, adjacent ones of the bins 112 (1) -112 (5) (fig. 1D) of the high band channel filter may be spaced farther apart from each other in the direction X than adjacent ones of the bins 112 (6) -112 (10) of the low band channel filter. The wider spacing between the high-band resonators 110 (1) -110 (5) may help reduce/prevent inductive coupling(s) between the high-band resonators 110 (1) -110 (5), and may additionally help provide mechanical tolerances that the tuning element(s) 120 may compensate for.
One or more of the low-band resonators 110 (6) -110 (10) may have a tuning element 120 thereon. For example, the handle 112 (6) may have the tuning element 120 (6) thereon, and the handle 112 (10) may have the tuning element 120 (10) thereon. Tuning element 120 (10) may be, for example, a metal tuning screw or a dielectric tuning screw. Furthermore, one or more of the high-band resonators 110 (1) -110 (5) (fig. 1D) may be shorter in the direction Z than one or more of the low-band resonators 110 (6) -110 (10).
The low-band channel filter shown in fig. 1E is an in-line (i.e., only in-line) resonator filter in which all of the low-band resonators 110 (6) -110 (10) are in-line in the direction X. In contrast, the high-band channel filter shown in fig. 1D is provided by high-band resonators 110 (1) -110 (5), which high-band resonators 110 (1) -110 (5) include opposing resonators that are not all collinear in direction X. In particular, fig. 1D shows that the open end of resonator 110 (1) (i.e., resonator head 114 (1)) is opposite the open ends of resonators 110 (2) and 110 (3) (i.e., resonator heads 114 (2) and 114 (3)), and the open end of resonator 110 (4) is opposite the open ends of resonators 110 (3) and 110 (5).
In some embodiments, resonators 110 (1) and 110 (4) may be in a first line with each other in direction X, and resonators 110 (2), 110 (3), and 110 (5) may be in a second line with each other in direction X. Thus, the high-band channel filter may comprise a plurality of sets (sets) of oppositely facing in-line resonators with only (or almost only) negative coupling between the different sets (sets). For example, the first set may include resonators 110 (1) and 110 (2)/110 (3), and the second set may include resonators 110 (4) and 110 (5)/110 (3). The topology of the high-band channel filters relative to each other, rather than just in-line, may help provide spacing among the high-band resonators 110 (1) -110 (5) that reduces/prevents positive coupling and provides mechanical tolerances that the tuning element(s) 120 can compensate for.
The topology of the low-band channel filter shown in fig. 1E may be suitable for lower frequencies, while a different topology of the high-band channel filter shown in fig. 1D may be suitable for higher frequencies. If the resonators 110 (1) -110 (5) were replaced by resonators 110 (6) -110 (10), the mechanical tolerances of the resonators 110 (6) -110 (10) as high-band resonators may be too large to compensate by tuning elements thereon and/or therebetween. Thus, tuning element(s) 120 may not be able to tune the high-band channel filter. The closer spacing of the resonators 110 (6) -110 (10) will also undesirably result in positive coupling. Furthermore, for low-band channel filters, using the topology shown in fig. 1E may be more efficient than the topology shown in fig. 1D. Thus, using the same of the two topologies for both lower and higher frequencies may result in lower performance of the filter device 100 than using a combination of the two topologies as shown in fig. 1C.
Fig. 2 is a graph of a response of the filter apparatus 100 according to an embodiment of the inventive concept. As shown in fig. 2, the transmission characteristic 210 of the filter device 100 is near 0 decibels (dB) for high band frequencies, thus indicating that substantially all power is transmitted. At about 1.9GHz, a transmission zero point appears in the response such that the filter does not substantially pass any RF energy at frequencies below 1.9 GHz. Also shown in fig. 2 is the reflected power (return loss) 220 of the filter device 100. In the passband, it may be desirable to have as little reflection as possible. As presented in fig. 2, by combining the high-band channel filter shown in fig. 1D, the filter device 100 can achieve good performance in both the transmission characteristics 210 and the reflected power (return loss) 220.
In some embodiments, the filter device 100 may provide a compact filter for small cell applications such as small cell base stations (which are discussed in U.S. patent application No.62/722,416, the entire disclosure of which is incorporated herein by reference).
The topology and shape of the resonator 110 of the filter apparatus 100 according to embodiments of the inventive concept may provide a number of advantages. These advantages include improved high-band channel filter performance due to the different placement and shaping of the high-band resonators 110 (1) -110 (5) than the low-band resonators 110 (6) -110 (10). In some embodiments, the arrangement and shape of the high-band resonators 110 (1) -110 (5) may ensure that only negative coupling is used in the overall high-band channel filter provided by the high-band resonators 110 (1) -110 (5). This may achieve a desired/optimized high-band channel response with an acceptable tradeoff between size, mechanical complexity, stop band rejection, and insertion loss. Furthermore, in some embodiments, the high-band channel filter may be more robust against mechanical tolerances because the minimum distance between the open ends of the high-band resonators 110 (1) -110 (5) may be greater than 4 mm.
Instead of duplicating the topology/shape of the high-band channel filter for the low-band channel filter, the low-band channel filter may more efficiently achieve proper performance in the low-band frequencies by using a different topology/shape. For example, the low-band resonators 110 (6) -110 (10) providing the low-band channel filter may achieve suitable performance in low-band frequencies in a simpler and more compact topology/shape.
In some embodiments, PIM problems in filter device 100 may be advantageously reduced by manufacturing low-band resonators 110 (6) -110 (10), high-band resonators 110 (1) -110 (5), and housing 105 together as a single piece of metal. Furthermore, some embodiments may advantageously use one or more dielectric tuning elements 120 to control the capacitive coupling(s) between resonators 110.
Fig. 3 is a side view of a filter apparatus 300 according to an embodiment of the inventive concept. The filter device 300 may include low-band resonators 110 (6) -110 (10) of the filter device 100 and one or more of the high-band resonators 110 (1) -110 (5). For example, fig. 3 shows that high-band resonators 110 (1) and 110 (4) are included in filter apparatus 300. The high-band channel filter of filter device 300 includes high-band resonators 310 (1) -310 (4) in addition to high-band resonators 110 (1) and 110 (4). Each of the high-band resonators 110 (1) and 110 (4) of the high-band channel filter may be a T-shaped resonator or a Y-shaped resonator and may be grouped with pairs of the high-band resonators 310 (1) -310 (4) of the high-band channel filter.
As an example, the high-band resonators 310 (1) and 310 (2) may be a first pair of L-shaped resonators. The high-band resonator 110 (1) extends between each of the high-band resonators 310 (1) and 310 (2) and is capacitively coupled to each of the high-band resonators 310 (1) and 310 (2) in the direction Z. Similarly, the high-band resonators 310 (3) and 310 (4) may be a second pair of L-shaped resonators, and the high-band resonator 110 (4) extends between each of the high-band resonators 310 (3) and 310 (4) and is capacitively coupled to each of the high-band resonators 310 (3) and 310 (4). Thus, the high-band resonators 310 (1) -310 (4) and the high-band resonators 110 (1) and 110 (4) may be in a single column (rather than two columns) with respect to each other in the direction X and may have only (or almost only) negative coupling with respect to each other. Further, the filter device 300 may comprise one or more tuning elements 120, which one or more tuning elements 120 may be tuning screws.
Thus, the filter device 300 may comprise a high-band filter comprising (e.g. comprising only) an inline high- band resonator 110 and 310, the inline high- band resonators 110 and 310 being in a single column in the direction X. For example, the high-band filter may include a high-band resonator 310 (1), the high-band resonator 310 (1) including a portion 310 (1E) extending in a direction X above a portion 110 (1-1) of the high-band resonator 110 (1) such that the portion 310 (1E) overlaps the portion 110 (1-1) in a direction Z and is capacitively coupled to the portion 110 (1-1). In some embodiments, filter device 300 may also include a low-band filter that includes only in-line low-band resonators, such as low-band resonators 110 (6) -110 (10).
Furthermore, the high-band filter may include a high-band resonator 310 (2), which high-band resonator 310 (2) may include a portion 310 (2E) extending in the direction X above the portion 110 (1-2) of the high-band resonator 110 (1) such that the portion 310 (2E) overlaps the portion 110 (1-2) in the direction Z and is capacitively coupled to the portion 110 (1-2). Portions 110 (1-1) and 110 (1-2) are the left and right ends, respectively, of resonator head 114 (1) shown in fig. 1D. In some embodiments, tuning element 120 may be between portion 310 (1E) and portion 310 (2E). For example, portions 310 (1E) and 310 (2E) may each include a cutout region that accommodates tuning element 120. Additionally or alternatively, tuning element 120 may be between the shank of high-band resonator 310 (1) and the shank of high-band resonator 110 (1).
Fig. 4 is a side view of a filter apparatus 401 according to an embodiment of the inventive concept. The filter device 401 may include low-band resonators 410 (L1) -410 (L4) that are I-shaped (or rectangular), and may also include high-band resonators 410 (H1) -410 (H3). The low-band resonators 410 (L1) -410 (L4) may have negative and positive cross-couplings with each other in a double-row configuration. For example, low-band resonators 410 (L2) and 410 (L4) may extend in direction Z from the top of filter device 401 and may be combined with low-band resonators 410 (L1) and 410 (L3) extending in direction Z from the bottom of filter device 401 to provide an interdigitated low-band channel filter(s) with a negative main interdigital coupling. The meandering shape in fig. 4 is a T-junction 411 at the common port 433 of the low-band channel filter and the high-band channel filter. In some embodiments, T-junction 411 may be an ohmic connection between a low-band channel filter and a high-band channel filter.
As an example, the filter device 401 may include a low band filter, a high band filter, and an ohmic connection 411, the ohmic connection 411 being between and electrically coupling the low band filter and the high band filter to a common port 433 of the filter device 401. However, in some embodiments, the ohmic connection 411 may be omitted.
The low-band filter of filter device 401 may include interdigital low-band resonators 410 (L1) -410 (L4), adjacent interdigital low-band resonators 410 (L1) -410 (L4) may be coaxial resonators negatively coupled to each other. Additionally or alternatively, the high-band filter of the filter device 401 may include a high-band resonator 410 (H1), which high-band resonator 410 (H1) may have a resonator head 414 (H1) opposite to a resonator head 414 (H2) of the high-band resonator 410 (H2) in the direction Z and capacitively coupled to the resonator head 414 (H2) of the high-band resonator 410 (H2). Further, the high-band filter may include a high-band resonator 410 (H3), which high-band resonator 410 (H3) may have a resonator head 414 (H3) opposite to the resonator head 414 (H1) in the direction Z and capacitively coupled to the resonator head 414 (H1). The high-band resonators 410 (H2) and 410 (H3) may be in line with each other in the direction X.
In some embodiments, filter device 401 may include an ohmic connection 413 electrically coupling low-band resonators 410 (L1) and 410 (L3) to each other. Similarly, filter device 401 may include an ohmic connection 424 that electrically couples low-band resonators 410 (L2) and 410 (L4) to each other. Ohmic connection 413 may be between bottom ground plane 402 of filter device 401 and low-band resonators 410 (L1) and 410 (L3), and ohmic connection 424 may be between top ground plane 404 of filter device 401 and low-band resonators 410 (L2) and 410 (L4). Positive cross-coupling between low-band resonators 410 (L1) and 410 (L3) may be achieved by ohmic connection 413 and positive cross-coupling between low-band resonators 410 (L2) and 410 (L4) may be achieved by ohmic connection 424. In turn, this may achieve transmission zeros above the passband, thus providing a good low band filter.
Fig. 5 is a graph of a response of a filter device 401 according to an embodiment of the inventive concept. As shown in fig. 5, positive cross-coupling in the low-band filter of filter device 401 may result in transmission zeros above the passband, thus providing good low-band filtering.
The filter device 100, 300, 401 according to an embodiment of the inventive concept may be implemented using (a) one layer resonator or (b) two layer resonators. For example, any of the filter devices 100, 300, 401 may be implemented using a double sided resonator structure, which is described in U.S. patent application No.62/796,752 ("the' 752 application"), filed on 1 month 25 in 2019, the entire disclosure of which is incorporated herein by reference. Thus, one or more of the filter devices 100, 300, 401 of the inventive concept may be implemented using the double sided PCB 110 of the '752 application including the first resonator layer 110RL and the second resonator layer 110 RL'. Alternatively, the first resonator layer 110RL and the second resonator layer 110RL' may be on a non-PCB substrate 110SUB such as a dielectric substrate. The first resonator layer 110RL and the second resonator layer 110RL' may each include a high-band resonator layer and/or a low-band resonator layer.
As an example, referring to fig. 1C-1E of the present application, the first resonator layer may include resonators 110 (1) -110 (5) and/or resonators 110 (6) -110 (10) on a first side of a substrate such as PCB (or non-PCB) substrate 110SUB of the' 752 application. Thus, the first resonator layer 110RL described in the' 752 application (e.g., as shown in fig. 1C thereof) may include resonators 110 (1) -110 (5) and/or resonators 110 (6) -110 (10) of the inventive concepts. Further, the second resonator layer 110RL 'described in the' 752 application may be on an opposite second side of the substrate and may be electrically coupled to the first resonator layer 110RL by a metal extending from the first side of the substrate to the second side of the substrate.
As described in the '752 application, the metal electrically coupling the first resonator layer 110RL and the second resonator layer 110RL' to each other may include one or more metallized vias 110V and/or metallization layers 110EP. For example, the metallization 110EP may be on a substrate sidewall 110SW that is exposed by adjacent ones of the resonators 110 (1) -110 (5) and/or openings 603 between adjacent ones of the resonators 110 (6) -110 (10) of the inventive concept, as shown in fig. 7C of the' 752 application.
In some embodiments, the resonator shape in the second resonator layer 110RL' may correspond to (e.g., mirror image of) the resonator shape in the first resonator layer 110RL. For example, the resonator 110 (1) in the first resonator layer 110RL may vertically overlap with the resonator in the second resonator layer 110RL' having the same size and shape as the resonator 110 (1). In some embodiments, the resonators 110 (1) -110 (10) may overlap the corresponding resonator entirely vertically in the second resonator layer 110 RL'. Alternatively, as shown in fig. 5D of the '752 application, the overlap between the first resonator layer 110RL and the second resonator layer 110RL' may be partial.
As another example, referring to fig. 3 of the present application, the first resonator layer 110RL described in the' 752 application may include resonators 310 (1) -310 (4), 110 (1), 110 (4), and/or 110 (6) -110 (10) on a first side of a substrate. Further, the second resonator layer 110RL' may be on an opposite second side of the substrate and may be electrically coupled to the first resonator layer 110RL by metallized via(s) 110V and/or metallization layer 110EP extending from the first side of the substrate to the second side of the substrate.
Similarly, referring to fig. 4 of the present application, the first resonator layer 110RL described in the '752 application may include resonators 410 (L1) -410 (L4) and/or 410 (H1) -410 (H3) on a first side of the substrate, and the second resonator layer 110RL' may be on an opposite second side of the substrate and may be electrically coupled to the first resonator layer 110RL through the metallized via(s) 110V and/or the metallization layer 110EP extending from the first side of the substrate to the second side of the substrate.
The inventive concept has been described above with reference to the accompanying drawings. The inventive concept is not limited to the embodiments shown. Rather, these embodiments are intended to fully and completely disclose the inventive concepts to those skilled in the art. In the drawings, like numbers refer to like elements throughout. The thickness and size of some of the components may be exaggerated for clarity.
Spatially relative terms, such as "below," "beneath," "lower," "above," "upper," "top," "bottom," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the example term "below" may encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or in other orientations) and the spatially relative descriptors used herein interpreted accordingly.
In this document, unless otherwise indicated, the terms "attached," "connected," "interconnected," "in contact," "mounted," and the like may mean either direct or indirect attachment or contact between elements.
Well-known functions or constructions may not be described in detail for brevity and/or clarity. As used herein, the expression "and/or" includes any and all combinations of one or more of the associated listed items.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the inventive concepts. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, operations, elements, components, and/or groups thereof.

Claims (13)

1. A filter apparatus comprising:
a plurality of low-band resonators; and
A plurality of high-band resonators, wherein a first high-band resonator and a second high-band resonator of the plurality of high-band resonators each extend in a first direction, and wherein a first resonator head of the first high-band resonator of the plurality of high-band resonators is capacitively coupled to a second resonator head of the second high-band resonator of the plurality of high-band resonators, and wherein the first resonator head faces the second resonator head opposite in the first direction.
2. The filter apparatus of claim 1, further comprising a single machined or die cast part containing the plurality of high-band resonators.
3. The filter device of claim 2,
wherein the single machined part or die cast part further comprises:
the plurality of low-band resonators; and
a housing from which the plurality of high-band resonators and the plurality of low-band resonators extend, an
Wherein the shortest distance between the first resonator head and the second resonator head is at least 4-6 millimeters (mm).
4. A filter apparatus comprising:
a housing;
a plurality of low-band resonators extending from the housing; and
A plurality of high-band resonators, wherein a first high-band resonator and a second high-band resonator of the plurality of high-band resonators are disposed on opposite portions of the housing, the first high-band resonator and the second high-band resonator of the plurality of high-band resonators each extending in a first direction, wherein a first resonator head of the first high-band resonator of the plurality of high-band resonators is capacitively coupled to a second resonator head of the second high-band resonator of the plurality of high-band resonators, and wherein the first resonator head is oppositely facing the second resonator head in the first direction,
wherein adjacent resonator heads of the plurality of high-band resonators are spaced farther apart from each other than adjacent resonator heads of the plurality of low-band resonators, an
Wherein adjacent shanks of the plurality of high-band resonators are spaced farther apart from each other than adjacent shanks of the plurality of low-band resonators.
5. The filter device of claim 4, wherein the plurality of high-band resonators each comprise a plurality of planar Y-resonators.
6. The filter device of claim 4, wherein adjacent resonator heads of the plurality of low-band resonators each comprise a planar rectangular resonator head.
7. The filter device of claim 4, wherein electromagnetic coupling between at least three of the plurality of high-band resonators comprises negative coupling only.
8. The filter device of claim 4, wherein at least three of the plurality of high-band resonators comprises at least two pairs of opposing high-band resonators of the plurality of high-band resonators.
9. The filter device of claim 4, wherein positive coupling between adjacent shanks of an even number of the plurality of high-band resonators is less than negative coupling.
10. A filter apparatus comprising:
a low-frequency band filter including resonators arranged in series in a first direction;
a high-band filter comprising high-band resonators, wherein a first high-band resonator and a second high-band resonator of the plurality of high-band resonators each extend in a second direction perpendicular to the first direction, wherein a first resonator head of the first high-band resonator of the high-band resonators is capacitively coupled to a second resonator head of the second high-band resonator of the high-band resonators, and wherein the first resonator head faces the second resonator head opposite in the second direction; and
A first ohmic connection between the low band filter and the high band filter and electrically coupling the low band filter and the high band filter to a common port of the filter device.
11. The filter device of claim 10, wherein the low-band filter comprises an interdigital low-band resonator.
12. The filter device of claim 11, wherein the first low-band resonator and the second low-band resonator of the low-band resonators are electrically coupled to each other by a second ohmic connection.
13. The filter device of claim 10,
wherein a third one of the high-band resonators is opposite to and capacitively coupled to the first one of the high-band resonators in the first direction, an
Wherein the second and third ones of the high-band resonators are aligned with each other in the first direction.
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US20200194857A1 (en) 2020-06-18
US20220059914A1 (en) 2022-02-24
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US11223094B2 (en) 2022-01-11
US11721878B2 (en) 2023-08-08

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