CN108682923A - The faces E wave band H microprobe type waveguide microstrip switching device based on LTCC - Google Patents
The faces E wave band H microprobe type waveguide microstrip switching device based on LTCC Download PDFInfo
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- CN108682923A CN108682923A CN201810300845.0A CN201810300845A CN108682923A CN 108682923 A CN108682923 A CN 108682923A CN 201810300845 A CN201810300845 A CN 201810300845A CN 108682923 A CN108682923 A CN 108682923A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/16—Auxiliary devices for mode selection, e.g. mode suppression or mode promotion; for mode conversion
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Abstract
The present invention relates to a kind of faces the E wave band H microprobe type waveguide microstrip switching device based on LTCC, including：Medium substrate (1), including metal layer and the LTCC medium substrates that are set on metal layer；Waveguide (2), waveguide (2) are vertically installed on medium substrate (1)；Metal micro-strip (3) is set in medium substrate (1), including microstrip probe, high impedance line, impedance transformer and the microstrip line being fixedly connected sequentially；Wherein, microstrip probe is vacantly placed in waveguide (2) by the second opening, high impedance line, impedance transformer and microstrip line are set to waveguide (2) outside, and the distance of the centre distance metal layer of microstrip probe is the odd-multiple of a quarter of waveguide (2) interior electromagnetic wavelength；Waveguide microstrip switching device provided by the invention, LTCC technology has been used, thus can carry out completing High Density Integration in millimere-wave band, to meet the requirement of its miniaturization, it is designed and has been optimized for 73GHz frequencies simultaneously, to meet the requirement of high-quality signal transmission.
Description
Technical field
The present invention relates to millimetre-wave attenuator technical fields, and in particular to a kind of faces E wave band H microprobe type wave based on LTCC
Lead microstrip transitions device.
Background technology
With the miniaturization of electronic system, traditional planar structure circuit can no longer meet it and be wanted to integrated level
It asks.Millimeter wave low-temperature co-fired ceramics (Low Temperature Co-fired Ceramic, abbreviation LTCC) technology is as a kind of
The typical technology of High Density Integration has excellent high frequency, high Q characteristic, and wiring density is big, and integrated level is high, the spies such as flexible design
Point is chiefly used in the integrated of millimeter-wave monolithic.In millimeter-wave communication system based on by LTCC, microstrip line is with its excellent biography
Defeated characteristic is widely used.
For reception system, front end will be in the electromagnetic transmission to microstrip line that received by waveguide.As connecing
The first order of receipts system, Waveguide-microbelt transformational structure extreme influence the performance of whole system.Signal is transmitted to micro-strip by waveguide
The excessive loss generated during on line can cause subsequent processes module can not work normally.The transformational structure energy haveing excellent performance
It is enough to minimize the loss of signal transmission, the input signal of high quality is provided for rear class signal processing module, it is whole to ensure
The normal operation of a system.High performance Waveguide-microbelt transition structure is just widely applied to radio frequency receiving and transmitting front end.It is main
Transitional type includes microprobe, ridge waveguide, to structures such as dorsal fin line and slot-coupleds.Wherein microprobe transition structure is simple,
Making easy to process, application are relatively broad.
5G communications use millimeter wave frequency band, and compared with 6GHz frequency spectrums below, the frequency spectrum of millimeter wave is not only very abundant,
It can be used as long as slightly authorized, therefore dealer all over the world can use millimeter wave.It is suitable for the frequency of 5G at present
Option includes mainly 28GHz, 39GHz and 73GHz.There is the continuous bandwidth of 2GHz to can be used for mobile communication in 73GHz, this is quasi-
It discusses widest in area in frequency spectrum.Length is not suitable for since Attenuation is larger away from communication, thus 5G technologies are mainly applied
In the micro-base station of household internal, certain requirement is proposed to miniaturization.In addition to this, the Waveguide-microbelt conversion under the frequency range
Structural loss is larger, cannot be satisfied the quality requirement of signal transmission.
Existing Waveguide-microbelt transformational structure since volume is excessive, be not easy to High Density Integration and frequency transfer characteristic compared with
Difference cannot be satisfied existing demand under 73GHz frequencies.
Invention content
In order to solve the above-mentioned problems in the prior art, the present invention proposes a kind of slot-coupled type wave based on LTCC
Lead microstrip transitions device and preparation method.
Specifically, the faces the E wave band H microprobe type Waveguide-microbelt conversion based on LTCC that the embodiment provides a kind of
Device, including：
Medium substrate；
Waveguide, the waveguide are vertically installed on the medium substrate；And one end of the waveguide is provided with the first opening；Institute
The side wall and the medium substrate surface intersection for stating waveguide are provided with the second opening；
Metal micro-strip is set on the medium substrate, including microstrip probe, high impedance line, impedance transformer and micro-
Band line；Wherein, the microstrip probe and the medium substrate below are vacantly placed in the waveguide by second opening
Interior, the high impedance line, the impedance transformer and the microstrip line are set to outside the waveguide, in the microstrip probe
Distance of the heart apart from the metal layer is the odd-multiple of a quarter of electromagnetic wave main mould wavelength in the waveguide.
In one embodiment of the invention, including micro-strip cover, the micro-strip, which is provide with, is placed in the high impedance line, the resistance
The top of resistance parallel operation and the microstrip line.
In one embodiment of the invention, the waveguide includes rectangular waveguide and copper post array；Wherein, the copper post battle array
Row are located in the medium substrate, and the rectangular waveguide is vertically installed in the medium substrate surface and connects with the copper post array
It connects.
In one embodiment of the invention, the medium substrate is below the interior zone perpendicular to the rectangular waveguide
For rectangular enclosure, the copper post array is located at the rectangular enclosure surrounding.
In one embodiment of the invention, the medium substrate further includes metal layer, and the metal layer is set to described
The lower section of rectangular enclosure.
In one embodiment of the invention, the copper post array includes 41 copper posts, and the copper post is a diameter of
0.094mm。
In one embodiment of the invention, second opening is rectangular configuration；Wherein, the long side of second opening
It is parallel with the medium substrate upper surface.
In one embodiment of the invention, the rectangular waveguide is WR12 waveguides, and broadside 3.0922mm, narrow side is
1.5494mm。
In one embodiment of the invention, the material of the metal micro-strip is silver.
In one embodiment of the invention, the material of the medium substrate is FerroA6M-E；Dielectric constant is 5.9,
Thickness is 0.8295mm.
The beneficial effects of the present invention are：A kind of faces E wave band H microprobe type Waveguide-microbelt converting means based on LTCC is provided
It sets, use the higher microprobe coupled modes of coupling efficiency and reduces probe to micro-strip using a quarter impedance matching
Signal reflex on line, so as to ensure signal transmission characteristics excellent under 73GHz frequencies.Meanwhile the present invention uses LTCC skills
Art is integrated in order to the modularization of frequency microwave monolithic, using buried metal column simulation wave guide wall thus by waveguide and ltcc substrate
It integrates, reduces module volume, used convenient for miniaturization.
Description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill of field, without creative efforts, others are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of waveguide microstrip switching device structural schematic diagram based on LTCC provided in an embodiment of the present invention；
Fig. 2 is waveguide composite structural diagram provided in an embodiment of the present invention；
Fig. 3 is another waveguide microstrip switching device structural schematic diagram based on LTCC provided in an embodiment of the present invention；
Fig. 4 is waveguide provided in an embodiment of the present invention windowing schematic diagram；
Fig. 5 is that copper post provided in an embodiment of the present invention arranges schematic diagram；
Fig. 6 is the vertical view size marking figure of waveguide microstrip switching device provided in an embodiment of the present invention；
Fig. 7 is the front view of waveguide microstrip switching device provided in an embodiment of the present invention；
Fig. 8 is the vertical view of waveguide microstrip switching device provided in an embodiment of the present invention；
Fig. 9 is the side view of waveguide microstrip switching device provided in an embodiment of the present invention；
Figure 10 is insertion loss simulation result diagram provided in an embodiment of the present invention；
Figure 11 is return loss simulation result diagram provided in an embodiment of the present invention.
Specific implementation mode
To keep the technical problem to be solved in the present invention, technical solution and advantage clearer, below in conjunction with attached drawing and tool
Body embodiment is described in detail.
Embodiment one
Fig. 1 is referred to, Fig. 1 is that a kind of waveguide microstrip switching device structure based on LTCC provided in an embodiment of the present invention is shown
It is intended to, including：
Medium substrate 1；
Waveguide 2, the waveguide 2 are vertically installed on the medium substrate 1；And one end of the waveguide 2 is provided with first and opens
Mouthful, for receiving electromagnetic wave；The side wall of the waveguide 2 and the surface intersection of the medium substrate 1 are provided with the second opening；
Metal micro-strip 3 is set on the medium substrate 1, and metal micro-strip 3 may include microstrip probe, high resistant by function
Anti- line, impedance transformer and microstrip line；Wherein, microstrip probe, high impedance line, impedance transformer and microstrip line be once at
Shape；And it is both provided with support medium substrate 1 below microstrip probe, high impedance line, impedance transformer and microstrip line.
Specifically, the microstrip probe and the medium substrate below are vacantly placed in described by second opening
In waveguide 2, the high impedance line, the impedance transformer and the microstrip line are set to outside the waveguide 2, and the micro-strip is visited
The vertical range of metal layer described in the centre distance of needle is the odd number of a quarter of electromagnetic wave main mould wavelength in the waveguide 2
Times.
Wherein, in terminal short circuit, terminal total reflection, electromagnetic field is in standing wave state, therefore microstrip probe is placed in voltage wave
The peak-to-peak value of voltage can be coupled to when antinode；Set the initial position of probe to the voltage wave nearest apart from waveguide short face
At antinode, i.e., the vertical range of metal layer described in the centre distance of the described microstrip probe is electromagnetic wavelength in the waveguide 2
The odd-multiple of a quarter can obtain the structural volume of best transiting performance and minimum.
The high impedance line of metal micro-strip is used to eliminate the capacitive reactances part that microstrip probe gos deep into rectangular waveguide intracavitary, so as to
Carry out impedance transformation.
Further, impedance transformer is a quarter impedance transformer, can only carry out the impedance matching of pure resistor load.
In order to make the front end characteristic impedance Z of microstrip transitions device0With the load impedance Z of rear endinMatch, a quarter impedance transformer
Characteristic impedance Z01It must satisfy the following conditions：
Wherein, Z01It is the characteristic impedance of a quarter impedance transformer, Z0It is the defeated of a quarter impedance transformer front end
Go out impedance, RLIt is the impedance of microstrip line.Signal can be solved due to caused by mismatch by a quarter impedance mapped structure
Loss.
Specifically, waveguide microstrip switching device further includes micro-strip cover, and the micro-strip, which is provide with, is placed in the high impedance line, described
The top of impedance transformer and the microstrip line.
Wherein, the high impedance line, the impedance transformer and the microstrip line position can be made by the way that micro-strip cover is arranged
In in a closed cavity；So that entire electromagnetic wave transmission system is constituted a closed Transmission system, can further decrease
Loss.Meanwhile micro-strip cover can play fixed function to the exposed metal micro-strip outside waveguide, keep whole device more steady
Gu.
Further, the waveguide 2 includes rectangular waveguide 21 and copper post array 22；Wherein, the copper post array 22 is located at
In the medium substrate 1, the rectangular waveguide 21 be vertically installed in 1 upper surface of the medium substrate and with the copper post array 22
Connection.
Specifically, the medium substrate 1 is rectangular enclosure, institute below the interior zone perpendicular to the rectangular waveguide 21
It states copper post array 22 and is located at the rectangular enclosure surrounding；The interior zone edge of the rectangular waveguide 21 and the copper post array 22
Alignment, the perimeter of the rectangular waveguide 21 is placed on the copper post array 22 or the copper post array 22 and the medium base
On plate 1.
Preferably, second opening is rectangular configuration；Wherein, the long side and the medium substrate 1 of second opening
Upper surface is parallel.
Waveguide microstrip switching device provided in this embodiment, by using the higher microprobe coupled modes of coupling efficiency,
Reduce signal reflex on probe to microstrip line using a quarter impedance matching, it is high to solve existing waveguide microstrip switching device
The poor problem of frequency transmission characteristic, can ensure signal transmission characteristics excellent under 73GHz frequencies.Meanwhile by using LTCC
Technology is integrated convenient for the modularization of frequency microwave monolithic, using buried metal column simulation wave guide wall thus by waveguide and ltcc substrate
It integrates, reduces module volume, solve existing Waveguide-microbelt transformational structure since volume is excessive, be not easy to high density
Integrated problem easily facilitates miniaturization and uses.
Embodiment two
The waveguide microstrip switching device based on LTCC provided to facilitate the understanding of the present invention, the present embodiment is in above-mentioned implementation
Design parameter is enumerated on the basis of example the waveguide microstrip switching device based on LTCC is described in detail.
Specifically, Fig. 3 is referred to, Fig. 3 is another Waveguide-microbelt conversion based on LTCC provided in an embodiment of the present invention
Apparatus structure schematic diagram；Fig. 4 is referred to, Fig. 4 is waveguide provided in an embodiment of the present invention windowing schematic diagram；Refer to Fig. 5, Fig. 5
Schematic diagram is arranged for copper post provided in an embodiment of the present invention；Fig. 6 is referred to, Fig. 6 is Waveguide-microbelt provided in an embodiment of the present invention
The vertical view size marking figure of conversion equipment；Fig. 7 is referred to, Fig. 7 is waveguide microstrip switching device provided in an embodiment of the present invention
Front view；Fig. 8 is referred to, Fig. 8 is the vertical view of waveguide microstrip switching device provided in an embodiment of the present invention；Fig. 9 is referred to, is schemed
9 be the side view of waveguide microstrip switching device provided in an embodiment of the present invention.
Fig. 2 is referred to, waveguide microstrip switching device includes substrate and rectangular waveguide；Rectangular waveguide both ends open is hollow
Rectangular parallelepiped structure, hollow space be its interior zone, for propagating electromagnetic wave；Rectangular waveguide is vertical along Electromagnetic Wave Propagation direction
It is connected on substrate, formed L-shaped structure.
Preferably, the substrate is rectangular parallelepiped structure, and the joint face of rectangular waveguide and substrate has broadside and narrow side, rectangle
The broadside of waveguide is parallel with the narrow side of substrate, and the upper table at the broadside center and substrate of the joint face of the rectangular waveguide and substrate
The narrow side center in face is located along the same line.
Further, substrate includes metal layer, LTCC medium substrates and metal micro-strip；Metal layer is located at base plate bottom,
LTCC medium substrates are located at metal layer, and metal micro-strip is located in LTCC medium substrates and along the narrow of the upper surface of medium substrate
Side center line setting, material are silver；LTCC medium substrates are being a rectangular enclosure, rectangle sky below rectangular waveguide
The rectangle of vertical view and the cross section rectangular profile of rectangular waveguide interior zone are consistent.
Specifically, metal micro-strip includes microstrip probe, four part of high impedance line, impedance transformer and microstrip line；Its
In, microstrip probe is located in rectangular enclosure, and high impedance line, impedance transformer and microstrip line are located at outside rectangular enclosure, microstrip line
For 50Ohm microstrip lines.
Specifically, rectangular waveguide can select WR12 waveguides, waveguide broadside 3.0922mm, narrow side 1.5494mm；
The model Ferro A6M-E that LTCC medium substrates are selected, dielectric constant 5.9, thickness 0.8295mm.
Further, waveguide microstrip switching device further includes the copper post array being embedded in substrate, and copper post array includes more
It is a cylinder copper post, copper post in substrate rectangular enclosure surrounding side wall arrangement, and with the edge phase of rectangular waveguide interior zone
It connects；Wherein, the copper post of copper post array links together with rectangular waveguide, and a complete waveguide is collectively formed, is situated between by LTCC
The case where embedding copper post simulation wave guide wall is inserted into LTCC medium substrates in matter substrate, thus to electromagnetic waveforms at constraint.
Preferably, in vertical direction, the half of each copper post is embedded in the medium substrate 1, and half is exposed outside.
Fig. 4, side rectangle windowing of the rectangular waveguide towards microstrip line are referred to, forms are located at rectangular waveguide close to micro-
Bottom with one side plane of line, forms rectangular centre are located at same perpendicular bisector with the planar central, and windowing width is
0.75854mm is highly 0.18282mm.
Preferably, Fig. 5 is referred to, copper post diameter is 0.094mm, is divided into A types copper post and Type B copper by the difference of its height
Column；Wherein, A types copper post is consistent with LTCC dielectric substrate thickness, and Type B height of the copper pillar subtracts in LTCC dielectric substrate thickness
Hsub, hsub are the paving copper planes of metal micro-strip at a distance from ltcc substrate surface layer.
Copper post is arranged along two long sides and short side of rectangular waveguide；Embedding 14 A type copper posts wherein below the sides a, copper post it
Between spacing can be 0.235mm；The embedding 6 A type copper posts of difference below the sides b and c, spacing can be 0.235mm；Below the sides d
Embedding 12 A types copper posts and 3 Type B copper posts；Type B copper post center is located at substrate longitudinal axis center, and the left and right sides is respectively buried
A Type B copper post is set, Type B copper post spacing can be 0.235mm；B, c can be in the spacing of copper post and copper post when d
0.1394mm；A, spacing can be 0.1394mm between Type B copper post.
Wherein, the distance values between copper post are preferred embodiment, and practical spacing is according to the actual size of the rectangular waveguide of selection
Allow the error of 0.1mm,
Specifically, the distance between short-circuit face of center line and rectangular waveguide of metal micro-strip is quarter-wave guided wave
It is long.The distance or 3/4ths wavelength, 5/4ths wavelength etc..Selection quarter-wave can make conversion equipment ruler
Very little smaller, convenient for integrated and miniaturization.
Wherein, quarter-wave is only theoretical value, and physical length may after the advanced optimizing of software program
And the theoretical value has some deviations, it is therefore an objective to choose the relatively strongest point of electric field, therefore actual range is managed with quarter-wave
May exist certain deviation by value.
Further, waveguide microstrip switching device further includes micro-strip cover, and it is micro- that micro-strip is provide with the metal being placed in outside rectangular waveguide
Band top, connect with LTCC medium substrates；It is covered with micro-strip cover above the exposed metal micro-strip outside rectangular waveguide, so that golden
Belong to the high resistant section of micro-strip, impedance matching section and span line are located in a closed cavity.
Fig. 6 is referred to, is spread at distance LTCC medium substrates surface layer 0.127mm (0.127 is FerroA6M-E thickness in monolayer)
Copper is used as the return path of microstrip line.That is the thickness h sub of microstrip line is 0.127mm.Copper plane is spread close to the boundary of wave guide wall
Level interval with the copper post center of circle for simulating wave guide wall is 0.048mm.
The length that LTCC medium substrates stretch into rectangular waveguide cavity inside is that microstrip probe length is consistent, and width 1mm is thick
Degree is consistent with paving copper plane separation LTCC medium substrate coating metal micro-strip spacing.
Referring again to Fig. 6, indicate that the width of waveguide long side, rb indicate that the width of waveguide narrow side, sw indicate LTCC in ra
The width of microstrip probe inside waveguide is stretched into the width of substrate, w1 expressions, and l1 indicates to stretch into the length of microstrip probe inside waveguide,
W2 indicates that the width of the outer high impedance line of rectangular waveguide, l2 indicate that the length of the outer high impedance line of rectangular waveguide, sa indicate a quarter
The width of impedance transformer, sb indicate that the length of a quarter impedance transformer, w3 indicate that the width of metal micro-strip line, l3 indicate
The length of metal micro-strip line.The thickness h of above-mentioned metal wire is 0.008mm.Specific size (unit as shown in the table：mm)
| sw | w1 | l1 | w2 | l2 | sa | sb | w3 | l3 |
| 5.0988 | 0.311683 | 0.7144 | 0.12 | 0.0543 | 0.242736 | 0.7297689 | 0.193 | 2.000 |
Further, in certain preferred embodiments of patent of the present invention, where rectangular waveguide broadside center line with width
The vertical normal plane in side, the normal plane and ltcc substrate perpendicular to metal micro-strip plane where metal micro-strip narrow side center line
The normal plane perpendicular to ltcc substrate where narrow side center line is approximately the same plane.
Waveguide microstrip switching device provided in this embodiment has used LTCC technology, thus can carry out in millimere-wave band
High Density Integration is completed, to meet the requirement of its miniaturization, while being designed and having been optimized for 73GHz frequencies, to
Meet the requirement of high-quality signal transmission.
Embodiment three
Operation principle to facilitate the understanding of the present invention, the present embodiment use 3 D electromagnetic on the basis of the above embodiments
The working performance of the waveguide microstrip switching device based on LTCC is analyzed in simulation software modeling.
Preferably, Fig. 2 is please participated in again, uses 3 D electromagnetic simulation software Ansys HFSS modelings, wherein waveguide 2 is
Rectangular waveguide, materials'use metallic copper, 2 interior media of waveguide are air, and medium substrate 1 is FerroA6M-E, and electromagnetic wave is by wave
2 ports port1 input is led, electromagnetic wave can be the millimeter wave of E wave bands, and electromagnetic wave is exported from the ports port2 of metal micro-strip.
Signal completes the conversion from rectangular waveguide to micro-strip signal from port1 to port2；Wherein, the center of E wave bands electromagnetic signal
Frequency selects 73GHz.
Specifically, Figure 10-Figure 11 is referred to, Figure 10 is insertion loss simulation result diagram provided in an embodiment of the present invention, figure
11 be return loss simulation result diagram provided in an embodiment of the present invention；Wherein.The working frequency of conversion equipment is 73GHz.Figure 10
The insertion loss that the structure emulates in 3 D electromagnetic simulation software HFSS, as can be seen from Figure 10 from 70GHz to
78GHz is up to its S21 in the wide-band of 8G and is able to maintain that within -0.3dB, it is possible thereby to ensure that signal almost nondestructively passes through
The structure.Figure 11 is the return loss that the structure is seen from port1, is can see in figure from 70GHz to 78GHz in frequency range
The S11 parameters of the structure are in -20dB hereinafter, this explanation signal reflex very little at port1, shows the knot in this frequency range
Structure has excellent efficiency of transmission.It can be proved by the simulation analysis to the structure insertion loss and return loss of the invention special
Profit has excellent transmission characteristic in the broad frequency range of 70-78GHz, and bandwidth can reach 8GHz, can meet new answer
Use demand.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
The specific implementation of the present invention is confined to these explanations.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to the present invention's
Protection domain.
Claims (10)
1. a kind of slot-coupled type waveguide microstrip switching device based on LTCC, which is characterized in that including：
Medium substrate (1)；
Waveguide (2), the waveguide (2) are vertically installed on the medium substrate (1)；And one end of the waveguide (2) is provided with
One opening；The side wall of the waveguide (2) is provided with the second opening with the medium substrate (1) surface intersection；
Metal micro-strip (3) is set on the medium substrate (1), including microstrip probe, high impedance line, impedance transformer and
Microstrip line；Wherein, the microstrip probe and the medium substrate (1) below are vacantly placed in described by second opening
In waveguide (2), the high impedance line, the impedance transformer and the microstrip line are set to the waveguide (2) outside, described micro-
The distance of metal layer described in centre distance with probe is the odd number of a quarter of the interior electromagnetic wave main mould wavelength of the waveguide (2)
Times.
2. waveguide microstrip switching device according to claim 1, which is characterized in that further include micro-strip cover, the micro-strip cover
It is set to the top of the high impedance line, the impedance transformer and the microstrip line.
3. waveguide microstrip switching device according to claim 1, which is characterized in that the waveguide (2) includes rectangular waveguide
(21) and copper post array (22)；Wherein, the copper post array (22) is located in the medium substrate (1), the rectangular waveguide
(21) it is vertically installed in the medium substrate (1) surface and is connect with the copper post array (22).
4. waveguide microstrip switching device according to claim 3, which is characterized in that the medium substrate (1) perpendicular to
It is rectangular enclosure below the interior zone of the rectangular waveguide (21), the copper post array (22) is located at the rectangular enclosure four
Week.
5. waveguide microstrip switching device according to claim 4, which is characterized in that the medium substrate (1) further includes gold
Belong to layer, the metal layer is set to the lower section of the rectangular enclosure.
6. waveguide microstrip switching device according to claim 4, which is characterized in that the copper post array (22) includes 41
Copper post, a diameter of 0.094mm of copper post.
7. waveguide microstrip switching device according to claim 4, which is characterized in that second opening is rectangular configuration；
Wherein, the long side of second opening is parallel with the medium substrate (1) upper surface.
8. waveguide microstrip switching device according to claim 1, which is characterized in that the rectangular waveguide (21) is WR12 waves
It leads, broadside 3.0922mm, narrow side 1.5494mm.
9. waveguide microstrip switching device according to claim 1, which is characterized in that the material of the metal micro-strip (3) is
Silver.
10. waveguide microstrip switching device according to claim 1, which is characterized in that the material of the medium substrate (1) is
FerroA6M-E；Dielectric constant is 5.9, thickness 0.8295mm.
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| CN201810300845.0A CN108682923A (en) | 2018-04-04 | 2018-04-04 | The faces E wave band H microprobe type waveguide microstrip switching device based on LTCC |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638452A (en) * | 2018-11-22 | 2019-04-16 | 天津七六四通信导航技术有限公司 | A kind of waveguide feed device convenient for safeguarding |
| CN112054276A (en) * | 2020-09-27 | 2020-12-08 | 中国工程物理研究院电子工程研究所 | Ridge waveguide-microstrip line transition circuit |
| CN113270705A (en) * | 2021-04-09 | 2021-08-17 | 博微太赫兹信息科技有限公司 | Microstrip line probe conversion structure of millimeter wave receiving and transmitting antenna |
| CN117878560A (en) * | 2024-03-04 | 2024-04-12 | 石家庄烽瓷电子技术有限公司 | Waveguide-microstrip probe vertical transition device and transition structure based on HTCC |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104331535A (en) * | 2014-09-22 | 2015-02-04 | 安徽华东光电技术研究所 | V waveband microstrip probe type waveguide microstrip switching circuit and parameter design method |
| CN104934676A (en) * | 2015-06-23 | 2015-09-23 | 西安空间无线电技术研究所 | Implementation method for waveguide-microstrip transition structure at millimeter wave band |
-
2018
- 2018-04-04 CN CN201810300845.0A patent/CN108682923A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104331535A (en) * | 2014-09-22 | 2015-02-04 | 安徽华东光电技术研究所 | V waveband microstrip probe type waveguide microstrip switching circuit and parameter design method |
| CN104934676A (en) * | 2015-06-23 | 2015-09-23 | 西安空间无线电技术研究所 | Implementation method for waveguide-microstrip transition structure at millimeter wave band |
Non-Patent Citations (1)
| Title |
|---|
| SHICHUN SUN等: "Waveguide to Microstrip Transitions in W-Band with LTCC Technology", 《2009 ASIA PACIFIC MICROWAVE CONFERENCE》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638452A (en) * | 2018-11-22 | 2019-04-16 | 天津七六四通信导航技术有限公司 | A kind of waveguide feed device convenient for safeguarding |
| CN112054276A (en) * | 2020-09-27 | 2020-12-08 | 中国工程物理研究院电子工程研究所 | Ridge waveguide-microstrip line transition circuit |
| CN113270705A (en) * | 2021-04-09 | 2021-08-17 | 博微太赫兹信息科技有限公司 | Microstrip line probe conversion structure of millimeter wave receiving and transmitting antenna |
| CN113270705B (en) * | 2021-04-09 | 2023-11-21 | 博微太赫兹信息科技有限公司 | Microstrip line probe conversion structure of millimeter wave transceiver antenna |
| CN117878560A (en) * | 2024-03-04 | 2024-04-12 | 石家庄烽瓷电子技术有限公司 | Waveguide-microstrip probe vertical transition device and transition structure based on HTCC |
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Application publication date: 20181019 |