CN203085713U - Substrate integrated waveguide dual-mode wave filter - Google Patents
Substrate integrated waveguide dual-mode wave filter Download PDFInfo
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- CN203085713U CN203085713U CN 201320083574 CN201320083574U CN203085713U CN 203085713 U CN203085713 U CN 203085713U CN 201320083574 CN201320083574 CN 201320083574 CN 201320083574 U CN201320083574 U CN 201320083574U CN 203085713 U CN203085713 U CN 203085713U
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Abstract
The utility model discloses a substrate integrated waveguide dual-mode wave filter which comprises a medium substrate, an upper surface metal layer and a lower surface metal layer, wherein a metallized through hole is further formed in the medium substrate; the metallized through hole, the upper surface metal layer and the lower surface metal layer form a square dual-mode cavity on the medium substrate; the dual-mode cavity is internally provided with a first disturbance grooved wire and a second disturbance grooved wire; a first metal post inductive window and a second metal post inductive window are respectively arranged on two adjacent sides of the dual-mode cavity; and a coplanar waveguide input end and a coplanar waveguide output end are arranged in the first metal post inductive window and the second metal post inductive window. Through the adoption of substrate integrated waveguide technology, the filter is in a one-layer structure, and is simple in processing, small in volume and high in integrity; on the other hand, very good selectivity is realized by utilizing the square substrate integrated waveguide dual-mode cavity, two transmission zeros can be generated, and the filter is good in stop band inhibition performance, little in in-band loss, excellent in performance and also very convenient to design.
Description
Technical field
The utility model relates to a kind of filter, particularly a kind of substrate integration wave-guide dual mode filter.
Background technology
Filter is one of important basic element circuit of Circuits System, and its performance is all influential to the selectivity of entire system, noise factor, sensitivity, gain etc.Traditional microwave filter adopts little band or waveguiding structure usually, but the shortcoming that they respectively have some to be difficult to overcome.For the flat filter that adopts microstrip line construction, it is little that they have a volume, process advantages such as simple, but exist power capacity low, and loss is big, because of shortcomings such as the inconvenient sealings of structure opening, thereby is applicable to the Circuits System that power is little; Filter power capacity height based on metal waveguide, loss is low, excellent performance, but processing cost height, and be not suitable for modern planar circuit integrated, substrate integration wave-guide (SIW) combines both advantages to a certain extent, keeping the conventional filter high power capacity, in the time of the low-loss advantage, also kept the general closed planar line filter be easy to integrated, lightweight, be easy to advantages such as processing, the substrate integrated waveguide technology filter can be realized with common PCB technology, processing cost is low, and fabrication cycle is short, and its principle realizes with metallized periodicity through hole alternative metals wall.Because frequency spectrum resource is limited, Modern Communication System has proposed more and more higher requirement to the selectivity of filter, and method commonly used is that the cross-couplings by a plurality of independently resonant cavitys produces transmission zero, but this method design is complicated, the filter volume is also bigger, can not satisfy people's requirement.
Summary of the invention
The purpose of this utility model just is to provide a kind of selectivity good, and volume reduces, and the stopband rejection is good, and Insertion Loss is little in the band, the substrate integration wave-guide dual mode filter of excellent performance.
To achieve these goals, the technical solution adopted in the utility model is such: substrate integration wave-guide dual mode filter of the present utility model, comprise dielectric substrate, on the dielectric substrate, lower surface is laid with upper surface metal level and lower surface metal layer respectively, also be provided with the plated-through hole that runs through upper surface metal level and lower surface metal layer on the dielectric substrate, described plated-through hole, upper surface metal level and lower surface metal layer form a foursquare bimodulus cavity on dielectric substrate, be provided with the first disturbance line of rabbet joint and the second disturbance line of rabbet joint in the bimodulus cavity, be respectively equipped with first metal column perception window and second metal column perception window on adjacent two limits of bimodulus cavity, in first metal column perception window and second metal column perception window, be provided with co-planar waveguide input and co-planar waveguide output.
As preferably, the diameter of described plated-through hole is 0.6mm, and the spacing between adjacent through-holes is 1mm.
As preferably, described dielectric substrate adopts ROGERS 5880 models, and thickness is 0.5mm, and dielectric constant is 2.2.
Compared with prior art, advantage of the present utility model is: one, this filter has less Insertion Loss, adopts the bimodulus structure, only uses a cavity just to realize two transmission zeros; And traditional cross-couplings filter is realized same four cavitys of performance need, thereby can bring bigger loss, and the bimodulus cavity has higher nonloaded Q than main die cavity body, therefore can less loss; Two, this filter can produce two transmission zeros, improved the attenuation outside a channel characteristic well, two limits being contributed by a cavity make passband more smooth, and the cascade when having avoided using single Design Pattern filter thus between the different cavitys has reduced the filter volume thus; Three, this filter adopts the single substrate integrated wave guide structure, make very simple, all utilize ripe standard industry technology, low and the precision height of cost, produce in batches easily, enclosed construction thereby radiation are little, and isolation and antijamming capability are strong, integrated with active planar circuit easily, this is a very big advantage for the metal waveguide filter.
Description of drawings
Fig. 1 is a structural representation of the present utility model;
Fig. 2 is the schematic cross-section of Fig. 1;
Fig. 3 is transmission characteristic figure of the present utility model.
Embodiment
The utility model is described in further detail below in conjunction with accompanying drawing.
Referring to Fig. 1 and Fig. 2, substrate integration wave-guide dual mode filter of the present utility model, comprise dielectric substrate 1, on the dielectric substrate 1, lower surface is laid with upper surface metal level 6 and lower surface metal layer 7 respectively, also be provided with the plated-through hole 2 that runs through upper surface metal level 6 and lower surface metal layer 7 on the dielectric substrate 1, described plated-through hole 2, upper surface metal level 6 and lower surface metal layer 7 form a foursquare bimodulus cavity 3 on dielectric substrate 1, be provided with the first disturbance line of rabbet joint 41 and the second disturbance line of rabbet joint 42 in the bimodulus cavity 3, bimodulus cavity 3 is respectively equipped with first metal column perception window and second metal column perception window on adjacent two limits, in first metal column perception window and second metal column perception window, be provided with co-planar waveguide input 51 and co-planar waveguide output 52, the diameter of described plated-through hole 2 is 0.6mm, spacing between adjacent through-holes is 1mm, described dielectric substrate 1 adopts ROGERS 5880 models, thickness is 0.5mm, and dielectric constant is 2.2.
The length of side of foursquare bimodulus cavity 3 is 15 mm, bimodulus cavity 3 is respectively equipped with first metal column perception window and second metal column perception window on adjacent two limits, bimodulus cavity 3 is realized the input and output coupling of energy by metal column perception window, play the eigenfrequency of adjusting different mode and the first disturbance line of rabbet joint 41 and the second disturbance line of rabbet joint 42 of the coupling between pattern and be positioned at the square cavity inside that plated-through hole 2 arrays surround, lay respectively at first metal column perception window, on the central axis of second metal column perception window, the disturbance line of rabbet joint is gone out by the upper surface metal etch; In first metal column perception window and second metal column perception window, be provided with co-planar waveguide input 51 and co-planar waveguide output 52, be connected with external circuit by 50 ohm microstrip, the degree of depth and the width that belong to the line of rabbet joint of co-planar waveguide by adjusting, can regulate the coupling of two patterns in the cavity, to improve the performance of filter, dual mode filter adopts TE
201And TE
102Pattern, and utilize two sections disturbance line of rabbet joint to carry out pattern and eigenfrequency tuning, filter can produce two transmission zeros, lays respectively at the both sides of filter passband, improved well the band outer selectivity.
In the present embodiment, the transmission characteristic of filter emulation and actual measurement as shown in Figure 3, as we can see from the figure, actual measurement return loss is better than-16dB, Insertion Loss is approximately 2.6dB in the band, this loss is to have comprised test splice, the influence of microstrip feed line and co-planar waveguide, and these losses still are apparent in view at the Ku wave band, deduct this part loss, the loss meeting of filter is littler, and test is very identical with simulation result, lower sideband on filter, can find two transmission zeros clearly, improved the selectivity of filter well, two limits have been arranged in the band, made the passband of filter be tending towards smooth.
Protection range of the present utility model is not limited to above-mentioned statement and embodiment; every various possible being equal to of making according to foregoing description replaced or changed; such as the disturbance line of rabbet joint being changed into disturbance perception through hole, all be considered to belong to the protection range that power example of the present utility model requires.
Claims (3)
1. substrate integration wave-guide dual mode filter, comprise dielectric substrate, on the dielectric substrate, lower surface is laid with upper surface metal level and lower surface metal layer respectively, also be provided with the plated-through hole that runs through upper surface metal level and lower surface metal layer on the dielectric substrate, it is characterized in that: described plated-through hole, upper surface metal level and lower surface metal layer form a foursquare bimodulus cavity on dielectric substrate, be provided with the first disturbance line of rabbet joint and the second disturbance line of rabbet joint in the bimodulus cavity, be respectively equipped with first metal column perception window and second metal column perception window on adjacent two limits of bimodulus cavity, in first metal column perception window and second metal column perception window, be provided with co-planar waveguide input and co-planar waveguide output.
2. substrate integration wave-guide dual mode filter according to claim 1 is characterized in that: the diameter of described plated-through hole is 0.6mm, and the spacing between adjacent through-holes is 1mm.
3. substrate integration wave-guide dual mode filter according to claim 1 is characterized in that: described dielectric substrate adopts ROGERS 5880 models, and thickness is 0.5mm, and dielectric constant is 2.2.
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CN 201320083574 CN203085713U (en) | 2013-02-25 | 2013-02-25 | Substrate integrated waveguide dual-mode wave filter |
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CN 201320083574 CN203085713U (en) | 2013-02-25 | 2013-02-25 | Substrate integrated waveguide dual-mode wave filter |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103413998A (en) * | 2013-08-09 | 2013-11-27 | 电子科技大学 | Single-cavity double-die hexagonal substrate integrated waveguide filter |
CN103531871A (en) * | 2013-10-29 | 2014-01-22 | 南通大学 | Substrate integrated waveguide differential band-pass filter |
CN105322259A (en) * | 2014-07-17 | 2016-02-10 | 南京理工大学 | Differential band-pass filter based on half mode substrate integrated waveguide structure |
CN105489986A (en) * | 2014-09-20 | 2016-04-13 | 南京理工大学 | Substrate integrated waveguide structure-based dual-passband barron filter |
CN106410336A (en) * | 2016-09-29 | 2017-02-15 | 上海航天测控通信研究所 | Stacked type three-order substrate integrated waveguide filter |
CN106410337A (en) * | 2016-09-29 | 2017-02-15 | 上海航天测控通信研究所 | Single-cavity substrate integrated waveguide multi-transmission-zero-point filter |
CN109103555A (en) * | 2018-07-19 | 2018-12-28 | 杭州电子科技大学 | Triple-band filter based on SIW structure |
-
2013
- 2013-02-25 CN CN 201320083574 patent/CN203085713U/en not_active Expired - Fee Related
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103413998A (en) * | 2013-08-09 | 2013-11-27 | 电子科技大学 | Single-cavity double-die hexagonal substrate integrated waveguide filter |
CN103531871A (en) * | 2013-10-29 | 2014-01-22 | 南通大学 | Substrate integrated waveguide differential band-pass filter |
CN105322259A (en) * | 2014-07-17 | 2016-02-10 | 南京理工大学 | Differential band-pass filter based on half mode substrate integrated waveguide structure |
CN105322259B (en) * | 2014-07-17 | 2019-05-07 | 南京理工大学 | Differential bandpass filter based on half module substrate integrated wave guide structure |
CN105489986A (en) * | 2014-09-20 | 2016-04-13 | 南京理工大学 | Substrate integrated waveguide structure-based dual-passband barron filter |
CN105489986B (en) * | 2014-09-20 | 2019-05-07 | 南京理工大学 | Double-passband balun filter based on substrate integrated wave guide structure |
CN106410336A (en) * | 2016-09-29 | 2017-02-15 | 上海航天测控通信研究所 | Stacked type three-order substrate integrated waveguide filter |
CN106410337A (en) * | 2016-09-29 | 2017-02-15 | 上海航天测控通信研究所 | Single-cavity substrate integrated waveguide multi-transmission-zero-point filter |
CN106410336B (en) * | 2016-09-29 | 2019-04-09 | 上海航天测控通信研究所 | A kind of three rank substrate integral wave guide filter of stack |
CN109103555A (en) * | 2018-07-19 | 2018-12-28 | 杭州电子科技大学 | Triple-band filter based on SIW structure |
CN109103555B (en) * | 2018-07-19 | 2020-03-20 | 杭州电子科技大学 | Three-band filter based on SIW structure |
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C14 | Grant of patent or utility model | ||
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130724 Termination date: 20140225 |