CN106602190A - Multilayer substrate integration waveguide filter with high out-of-band rejection - Google Patents
Multilayer substrate integration waveguide filter with high out-of-band rejection Download PDFInfo
- Publication number
- CN106602190A CN106602190A CN201610967359.5A CN201610967359A CN106602190A CN 106602190 A CN106602190 A CN 106602190A CN 201610967359 A CN201610967359 A CN 201610967359A CN 106602190 A CN106602190 A CN 106602190A
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- input
- layer
- feeder line
- output feeder
- cavity surface
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
- H01P1/2082—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure with multimode resonators
Abstract
The present invention provides a multilayer substrate integration waveguide filter with high out-of-band rejection. The problems are solved that the size of the current substrate integration waveguide is large, the level of the out-of-band rejection is not high, and the loss is still large. The filter comprises in order from up to down comprises a first metal layer (1), a first dielectric layer (2), a second metal layer (3), a second dielectric layer (4) and a third metal layer (5) which are stacked. The materials of the first metal layer (1), the second metal layer (3) and the third metal layer (5) are copper or sliver or tin or the composite layer formed by two types of metal mentioned above, namely the substrate metal is plated with another metal layer, and the first dielectric layer (2) and the second dielectric layer (4) can be common high-frequency circuit substrate and also can be the substrate though LTCC sintering or a semiconductor substrate. The multilayer substrate integration waveguide filter with the high out-of-band rejection can be configured to allow a transmit-receive front end to filter interference signals, and is good in the out-of-band rejection, small in loss and small in size.
Description
Technical field：
The invention belongs to microwave and millimeter wave passive device technical field, more particularly to the substrate collection in microwave and millimeter wave passive device
Into waveguide filter.
Background technology：
Wave filter is one of Primary Component of radio frequency receiving and transmitting front end, is widely used in radar and communication system.In recent years, with
The continuous improvement that the miniaturization of these systems and high integration are required, the performance to wave filter, such as insertion loss, Out-of-band rejection,
Size etc., it was also proposed that higher requirement.Current wave filter is mainly made up of micro-strip, cavity, microstrip filter loss
Greatly, power capacity is little, although and cavity body filter loss it is little, bulky, weight is also weighed.Substrate integration wave-guide is a kind of
Structure between micro-strip and cavity, combines both advantages, can meet higher power capacity, less damage simultaneously
Consumption.But the substrate integral wave guide filter size of common monolayer single mode is larger, and Out-of-band rejection level is not high, loss still compared with
Greatly.
The content of the invention：
The purpose of the present invention is to propose to a kind of size is little, insertion loss is lost little, the multilamellar of the high high out-of-side rejection of Out-of-band rejection
Substrate integral wave guide filter.
What the present invention was realized in：
Including the first metal layer 1, first medium layer 2, second metal layer 3, second dielectric layer 4 for stacking gradually from top to bottom,
Three metal levels 5, the material used by first, second, third metal level 1,3,5 are golden or silver-colored copper or stannum or above two metal
The composite bed of composition（Another kind of metal level is plated i.e. on parent metal）, can select not plate above such as Copper Foil metal or it is gold-plated or
It is silver-plated or tin plating, or be exactly pure silver after being sintered with silver paste,
First, second dielectric layer 2,4 is the substrate or semiconductor chip that common high-frequency circuit substrate or LTCC are sintered into；First
First resonance cavity surface layer 11 of the metal level 1 comprising circle, and coupled rectangular first input and output feeder line 13, first
Respectively there is rectangular first coupling slot 12 input and output feeder line both sides, and the first coupling slot corrodes in the first resonance cavity surface layer
Come, positioned at the first input and output feeder line 13 and the junction of the first resonance cavity surface layer 11；First medium layer 2 be rectangle, first
Plated-through hole array 23 runs through first medium layer 2, surrounds circle, and the lower opening in the first input and output feeder line 13 is formed
First coupling window 21, the first perturbation through hole 22 is two through holes on the round diameter, and, its institute equal to the distance in the center of circle
It it is 45 degree in the angle of diameter and the first input and output feeder line 13；3rd metal level 3 is rectangle, and heart position corrodes wherein
Rectangular coupling aperture 31, coupling aperture 31 are parallel with the line of two the first perturbation through holes 22；Second dielectric layer 4 is rectangular
Shape, the second plated-through hole array 43 run through second dielectric layer 4, surround circle, and in the top of the second input and output feeder line 53
Opening forms the second coupling window 41, and the second perturbation through hole 42 is two through holes on the round diameter, and to the distance in the center of circle
Equal, the diameter that its place diameter is located with the first perturbation through hole 22 is parallel；3rd metal level 5 comprising circle second is humorous
Shake cavity surface layer 51, and the rectangular second input and output feeder line 53 being attached thereto, the second resonance cavity surface layer 51 and the first resonance
The radius of cavity surface layer 11 is identical, and the second input and output feeder line 53 is parallel with the first input and output feeder line 13, and the second input is defeated
Going out 53 both sides of feeder line respectively has rectangular second coupling slot 52, and the second coupling slot 52 is to corrode in the second resonance cavity surface layer 51
Come, positioned at the second input and output feeder line 53 and the junction of the second resonance cavity surface layer 51, the center of circle of above-mentioned all circles and rectangular
On same vertical line, the diameter of the circle that first and second plated-through hole array 23,43 is surrounded is less than at the center of the coupling aperture 31 of shape
The diameter of first and second resonance cavity surface layer.
The principle of technical scheme is：The present invention is integrated by the conglobate substrate of two circular bimodulus resonator cavity structures
Waveguide resonant cavity, wherein, first bimodulus resonator cavity is metallized by the first resonance cavity surface layer 11, the first perturbation through hole 22, first
Via-hole array 23, the 3rd metal level 3 are constituted, second bimodulus resonator cavity by the second resonance cavity surface layer 51, the second perturbation through hole 42,
Second plated-through hole array 43, the 3rd metal level 3 are constituted.Due to circular substrate integration wave-guide resonator cavity quality factor compared with
It is high, it is possible to reduce the insertion loss of wave filter.Each circular resonator cavity is dual-mode resonator, and a resonator cavity can be produced
Raw two orthogonal modes of resonance, the effect of the first perturbation through hole 22 and the second perturbation through hole 42 is the two modal cutoffs
Come, i.e., resonator resonance is in two different frequencies.First input and output feeder line 13 and the second input and output feeder line 53 can divide
It is other that the two patterns are entered with row energization, and in the pattern and another resonator cavity in coupling aperture 31 permissions, one resonator cavity
A Mode Coupling.Two resonator cavitys can produce four modes of resonance, the two therein transmission poles for being used to produce wave filter
Point, another two mode of resonance are used for two transmission zeros for producing wave filter.Due to producing the mode of resonance of transmission pole than producing
The mode of resonance of raw transmission zero has relatively low resonant frequency, therefore two transmission zeros are higher than the frequency of passband.And transmit
The position of zero point can also be controlled by the position of change through hole.The bandwidth of wave filter is controlled by coupling aperture 31, coupling aperture
31 is bigger, then the energy for coupling is more, and bandwidth is wider.And first, second coupling slot 12,52 is used for control input output coupling.
The advantages of the present invention：
The present invention adopts substrate integrated wave guide structure, and the quality factor of resonator are high, have the advantages that loss is little.It is double in the present invention
Mode resonant cavity, a chamber can produce two modes of resonance, can reduce the size of wave filter, and the introducing of multiple structure, one can be entered
Step reduces the size of wave filter, therefore the present invention has the advantages that compact conformation.As the present invention introduces transmission zero outside passband
Point, therefore with very high Out-of-band rejection level.
Description of the drawings：
Fig. 1 is the tomograph after the present invention launches
Fig. 2 is the top view of the present invention
Fig. 3 is the frequency response chart of present invention emulation
Specific embodiment：
The present invention will be further described with specific embodiment below in conjunction with the accompanying drawings：As depicted in figs. 1 and 2, press down outside a kind of high band
The multi layer substrate integral wave guide filter of system, including the first metal layer 1, first medium layer 2, second for stacking gradually from top to bottom
Metal level 3, second dielectric layer 4, the 3rd metal level 5, first, second, third metal level 1,3,5 is Copper Foil, first, second medium
The relative dielectric constant of layer 2,4 is 2.65, and thickness is 0.8mm；The first metal layer 1 includes the first circular resonance cavity surface layer 11,
And the rectangular first input and output feeder line 13 being attached thereto, the first coupling slot 12 is to corrode in the first resonance cavity surface layer 11
Come, positioned at the both sides of the first input and output feeder line 13；First medium layer 2 is rectangle, and the first plated-through hole array 23 passes through
First medium layer 2 is worn, circle is surrounded, and the lower opening in the first input and output feeder line 13 forms the first coupling window 21, first
Perturbation through hole 22 is two through holes on the round diameter, and equal to the distance in the center of circle, and its place diameter and first is input into
The angle of output feeder 13 is 45 degree；3rd metal level 3 is rectangle, and heart position is corroded and rectangular coupling aperture wherein
31, coupling aperture 31 is parallel with the line of two the first perturbation through holes 22；Second dielectric layer 4 is rectangle, and second metallizes
Via-hole array 43 runs through second dielectric layer 4, surrounds circle, and the upper opening in the second input and output feeder line 53 forms the second coupling
Window 41 is closed, the second perturbation through hole 42 is two through holes on the round diameter, and, its place diameter equal to the distance in the center of circle
The diameter being located with the first perturbation through hole 22 is parallel；3rd second resonance cavity surface layer 51 of the metal level 5 comprising circle, and with
The rectangular second input and output feeder line 53 being connected, the radius phase of the second resonance cavity surface layer 51 and the first resonance cavity surface layer 11
Together, the second input and output feeder line 53 is parallel with the first input and output feeder line 13, and the second coupling slot 52 is in the second resonator cavity
What top layer 51 corroded out, positioned at the both sides of the second input and output feeder line 53.Fig. 2 is the frequency response curve of the wave filter, filter
In 11GHz, three dB bandwidth is 510MHz to the mid frequency of ripple device, the insertion loss at mid frequency be 0.64dB, the response of S21
Respectively there is a zero point in 12GHz, 13GHz, 14.6GHz, improve the Out-of-band rejection of wave filter.
Claims (1)
1. the multi layer substrate integral wave guide filter of high out-of-side rejection, it is characterised in that including for stacking gradually from top to bottom
One metal level（1）, first medium layer（2）, second metal layer（3）, second dielectric layer（4）, the 3rd metal level（5）, first,
2nd, the 3rd metal level（1、3、5）Material used is the composite bed that golden or silver-colored copper or stannum or above two metal are constituted, the
First, second dielectric layer（2）、（4）The substrate sintered into for common high-frequency circuit substrate or LTCC or semiconductor chip；First gold medal
Category layer（1）Comprising the first circular resonance cavity surface layer（11）, and coupled rectangular first input and output feeder line（13）,
First input and output feeder line（13）Respectively there is rectangular first coupling slot both sides（12）, the first coupling slot（12）In the first resonance
Cavity surface layer（11）Corrode out, positioned at the first input and output feeder line（13）With the first resonance cavity surface layer（11）Junction；First
Dielectric layer（2）For rectangle, the first plated-through hole array（23）Through first medium layer（2）, circle is surrounded, and it is defeated first
Enter output feeder（13）Lower opening formed the first coupling window（21）, the first perturbation through hole（22）It is two on the round diameter
Individual through hole, and equal to the distance in the center of circle, its place diameter and the first input and output feeder line（13）Angle be 45 degree；3rd
Metal level（3）For rectangle, heart position is corroded and rectangular coupling aperture wherein（31）, coupling aperture（31）It is first micro- with two
Disturb through hole（22）Line be parallel；Second dielectric layer（4）For rectangle, the second plated-through hole array（43）Through second
Dielectric layer（4）, circle is surrounded, and in the second input and output feeder line（53）Upper opening formed the second coupling window（41）, second
Perturbation through hole（42）It is two through holes on the round diameter, and it is equal to the distance in the center of circle, and its place diameter is micro- with first
Disturb through hole（22）The diameter at place is parallel；3rd metal level（5）Comprising the second circular resonance cavity surface layer（51）, and therewith
Connected rectangular second input and output feeder line（53）, the second resonance cavity surface layer（51）With the first resonance cavity surface layer（11）Half
Footpath is identical, the second input and output feeder line（53）With the first input and output feeder line（13）It is parallel, the second input and output feeder line
（53）Respectively there is rectangular second coupling slot both sides（52）, the second coupling slot（52）It is in the second resonance cavity surface layer（51）Corrosion
Out, positioned at the second input and output feeder line（53）With the second resonance cavity surface layer（51）Junction, the center of circle of above-mentioned all circles
With rectangular coupling aperture（31）Center on same vertical line, first and second plated-through hole array（23、43）The circle for surrounding
Diameter less than first and second resonance cavity surface layer diameter.
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| CN201610967359.5A CN106602190A (en) | 2016-10-31 | 2016-10-31 | Multilayer substrate integration waveguide filter with high out-of-band rejection |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107230817A (en) * | 2017-05-19 | 2017-10-03 | 南京邮电大学 | The wide wall micropore couplers of the dB of half module substrate integrated wave guide 3 |
| CN107302122A (en) * | 2017-06-02 | 2017-10-27 | 南京理工大学 | Three-passband filter based on substrate integration wave-guide |
| CN108400411A (en) * | 2018-03-15 | 2018-08-14 | 南京邮电大学 | Integral substrate waveguide bandpass filter based on triangle complementary openings resonant ring |
| CN108493526A (en) * | 2018-04-09 | 2018-09-04 | 广东曼克维通信科技有限公司 | Filter resonance device and symmetrical fold substrate integral wave guide filter |
| CN109326859A (en) * | 2018-10-29 | 2019-02-12 | 南京航空航天大学 | TM bimodulus based on SIW balances bandpass filter |
| CN109818119A (en) * | 2018-12-31 | 2019-05-28 | 瑞声科技（南京）有限公司 | Millimeter wave LTCC filter |
| CN109904571A (en) * | 2019-02-25 | 2019-06-18 | 江南大学 | Substrate integral wave guide filter based on electromagnetism hybrid coupled |
| CN109921177A (en) * | 2018-12-31 | 2019-06-21 | 瑞声科技（南京）有限公司 | Filter antenna device |
| CN110544822A (en) * | 2018-11-16 | 2019-12-06 | 西安电子科技大学 | Ka-band miniaturized filtering antenna based on SIW structure |
| CN112086722A (en) * | 2020-09-07 | 2020-12-15 | 郑州宇林电子科技有限公司 | Design method of miniaturized band-pass filter with high selectivity and wide stop band |
| CN113381141A (en) * | 2021-05-19 | 2021-09-10 | 南京智能高端装备产业研究院有限公司 | Double-passband balance power division filter adopting double-layer circular patch |
| CN113410596A (en) * | 2021-06-11 | 2021-09-17 | 大连海事大学 | Substrate integrated waveguide filter based on single-mode and double-mode mixing |
| WO2022001570A1 (en) | 2020-07-02 | 2022-01-06 | 罗森伯格技术有限公司 | Band-stop filter and radio frequency device |
| CN114284673A (en) * | 2021-12-29 | 2022-04-05 | 杭州电子科技大学 | Substrate integrated waveguide dual-band filtering balun |
| CN114335966A (en) * | 2021-12-29 | 2022-04-12 | 杭州电子科技大学 | Miniaturized substrate integrated waveguide magic T with filtering function |
| CN114335943A (en) * | 2021-11-30 | 2022-04-12 | 南京邮电大学 | High-selectivity band-pass filter based on hybrid folded substrate integrated waveguide resonant cavity |
| CN114784473A (en) * | 2022-03-16 | 2022-07-22 | 上海交通大学 | Dual-folded substrate integrated waveguide filtering balun based on silicon-based photosensitive film |
| CN115101909A (en) * | 2022-07-11 | 2022-09-23 | 上海航天电子有限公司 | Three-mode band-pass filter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110076517A (en) * | 2009-12-29 | 2011-07-06 | 전자부품연구원 | A siw filter structure embeded in circuit board and a method thereof |
| CN102354790A (en) * | 2011-10-25 | 2012-02-15 | 电子科技大学 | Highly miniaturized substrate integrated waveguide resonator |
| CN204205006U (en) * | 2014-10-27 | 2015-03-11 | 华南理工大学 | One has double-deck double frequency substrate integration wave-guide band pass filter |
| CN105048051A (en) * | 2015-07-08 | 2015-11-11 | 东南大学 | Tunable substrate integrated waveguide circular resonant cavity filter |
-
2016
- 2016-10-31 CN CN201610967359.5A patent/CN106602190A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110076517A (en) * | 2009-12-29 | 2011-07-06 | 전자부품연구원 | A siw filter structure embeded in circuit board and a method thereof |
| CN102354790A (en) * | 2011-10-25 | 2012-02-15 | 电子科技大学 | Highly miniaturized substrate integrated waveguide resonator |
| CN204205006U (en) * | 2014-10-27 | 2015-03-11 | 华南理工大学 | One has double-deck double frequency substrate integration wave-guide band pass filter |
| CN105048051A (en) * | 2015-07-08 | 2015-11-11 | 东南大学 | Tunable substrate integrated waveguide circular resonant cavity filter |
Non-Patent Citations (1)
| Title |
|---|
| XIAO XIAO LIU ET AL.: "Double-layer Dual-mode SIW Filter Using Via Perturbation", 《2012 IEEE INTERNATIONAL WORKSHOP ON ELECTROMAGNETICS: APPLICATIONS AND STUDENT INNOVATION COMPETITION》 * |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107230817A (en) * | 2017-05-19 | 2017-10-03 | 南京邮电大学 | The wide wall micropore couplers of the dB of half module substrate integrated wave guide 3 |
| CN107302122A (en) * | 2017-06-02 | 2017-10-27 | 南京理工大学 | Three-passband filter based on substrate integration wave-guide |
| CN108400411B (en) * | 2018-03-15 | 2019-12-31 | 南京邮电大学 | Integrated substrate waveguide band-pass filter based on triangular complementary split resonant ring |
| CN108400411A (en) * | 2018-03-15 | 2018-08-14 | 南京邮电大学 | Integral substrate waveguide bandpass filter based on triangle complementary openings resonant ring |
| CN108493526B (en) * | 2018-04-09 | 2019-06-14 | 广东曼克维通信科技有限公司 | Filter resonance device and symmetrical fold substrate integral wave guide filter |
| CN108493526A (en) * | 2018-04-09 | 2018-09-04 | 广东曼克维通信科技有限公司 | Filter resonance device and symmetrical fold substrate integral wave guide filter |
| CN109326859A (en) * | 2018-10-29 | 2019-02-12 | 南京航空航天大学 | TM bimodulus based on SIW balances bandpass filter |
| CN110544822A (en) * | 2018-11-16 | 2019-12-06 | 西安电子科技大学 | Ka-band miniaturized filtering antenna based on SIW structure |
| CN109818119A (en) * | 2018-12-31 | 2019-05-28 | 瑞声科技（南京）有限公司 | Millimeter wave LTCC filter |
| CN109921177A (en) * | 2018-12-31 | 2019-06-21 | 瑞声科技（南京）有限公司 | Filter antenna device |
| CN109904571A (en) * | 2019-02-25 | 2019-06-18 | 江南大学 | Substrate integral wave guide filter based on electromagnetism hybrid coupled |
| CN109904571B (en) * | 2019-02-25 | 2020-06-05 | 江南大学 | Substrate integrated waveguide filter based on electromagnetic hybrid coupling |
| WO2022001570A1 (en) | 2020-07-02 | 2022-01-06 | 罗森伯格技术有限公司 | Band-stop filter and radio frequency device |
| CN112086722A (en) * | 2020-09-07 | 2020-12-15 | 郑州宇林电子科技有限公司 | Design method of miniaturized band-pass filter with high selectivity and wide stop band |
| CN112086722B (en) * | 2020-09-07 | 2022-03-01 | 郑州宇林电子科技有限公司 | Design method of miniaturized band-pass filter with high selectivity and wide stop band |
| CN113381141A (en) * | 2021-05-19 | 2021-09-10 | 南京智能高端装备产业研究院有限公司 | Double-passband balance power division filter adopting double-layer circular patch |
| CN113381141B (en) * | 2021-05-19 | 2023-02-28 | 南京智能高端装备产业研究院有限公司 | Double-passband balance power division filter adopting double-layer circular patch |
| CN113410596A (en) * | 2021-06-11 | 2021-09-17 | 大连海事大学 | Substrate integrated waveguide filter based on single-mode and double-mode mixing |
| CN113410596B (en) * | 2021-06-11 | 2022-04-01 | 大连海事大学 | Substrate integrated waveguide filter based on single-mode and double-mode mixing |
| CN114335943A (en) * | 2021-11-30 | 2022-04-12 | 南京邮电大学 | High-selectivity band-pass filter based on hybrid folded substrate integrated waveguide resonant cavity |
| CN114284673A (en) * | 2021-12-29 | 2022-04-05 | 杭州电子科技大学 | Substrate integrated waveguide dual-band filtering balun |
| CN114335966A (en) * | 2021-12-29 | 2022-04-12 | 杭州电子科技大学 | Miniaturized substrate integrated waveguide magic T with filtering function |
| CN114284673B (en) * | 2021-12-29 | 2022-12-13 | 杭州电子科技大学 | Substrate integrated waveguide dual-band filtering balun |
| CN114784473A (en) * | 2022-03-16 | 2022-07-22 | 上海交通大学 | Dual-folded substrate integrated waveguide filtering balun based on silicon-based photosensitive film |
| CN115101909A (en) * | 2022-07-11 | 2022-09-23 | 上海航天电子有限公司 | Three-mode band-pass filter |
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