CN110011009B - Band-pass filter - Google Patents
Band-pass filter Download PDFInfo
- Publication number
- CN110011009B CN110011009B CN201910222669.8A CN201910222669A CN110011009B CN 110011009 B CN110011009 B CN 110011009B CN 201910222669 A CN201910222669 A CN 201910222669A CN 110011009 B CN110011009 B CN 110011009B
- Authority
- CN
- China
- Prior art keywords
- dielectric substrate
- layer
- resonator
- feeding point
- feed line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20327—Electromagnetic interstage coupling
- H01P1/20354—Non-comb or non-interdigital filters
- H01P1/20381—Special shape resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/2039—Galvanic coupling between Input/Output
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention discloses a band-pass filter, which comprises a first layer of dielectric substrate, a second layer of dielectric substrate, a third layer of dielectric substrate, a fourth layer of dielectric substrate, a fifth layer of dielectric substrate, a first resonator, a second resonator, an input feeder and an output feeder, wherein the first layer of dielectric substrate, the second layer of dielectric substrate, the third layer of dielectric substrate, the fourth layer of dielectric substrate and the fifth layer of dielectric substrate are sequentially stacked; and the input feeder line and the output feeder line are fixedly arranged on the surface of the fifth layer dielectric substrate facing the fourth layer dielectric substrate. The invention is based on the multilayer dielectric plate stacking technology, the first resonator and the second resonator are respectively positioned on different layers, the resonant frequency can be changed by changing the length of the first resonator or the second resonator, and the first resonator and the second resonator are coupled through the slot. And two coupling paths are introduced, so that two transmission zeros can be generated, and the selectivity of the band-pass filter is greatly improved.
Description
Technical Field
The invention belongs to the technical field of microwave communication, and particularly relates to a band-pass filter.
Background
With the rapid development of wireless communication systems, communication standards such as GSM, CDMA, WCDMA, WIMAX, WLAN, etc. are beginning to be widely used. The filter is an essential component of the rf front end, and its main function is to separate frequencies, i.e. pass signals of certain frequencies and block signals of other frequencies, and an ideal filter should meet the requirement that the passband is unattenuated and the attenuation is infinite in the cutoff frequency.
In the conventional filter design, the order of the filter is usually increased to realize high selectivity and high isolation between passbands, but this easily causes the problems of complicated circuit structure, too large size of the filter, increased manufacturing cost and the like.
Disclosure of Invention
The invention aims to provide a band-pass filter, aiming at solving the problems of overlarge size and low selectivity of the filter.
In order to solve the technical problem, the invention is realized in such a way that a band-pass filter comprises a first layer of dielectric substrate, a second layer of dielectric substrate, a third layer of dielectric substrate, a fourth layer of dielectric substrate, a fifth layer of dielectric substrate, a first resonator, a second resonator, an input feeder and an output feeder, wherein the first layer of dielectric substrate, the second layer of dielectric substrate, the third layer of dielectric substrate, the fourth layer of dielectric substrate and the fifth layer of dielectric substrate are stacked in sequence; the input feeder line and the output feeder line are fixedly arranged on the surface of the fifth layer dielectric substrate facing the fourth layer dielectric substrate;
the first resonator is fixedly arranged on the surface of the fourth layer of dielectric substrate facing the third layer of dielectric substrate, and a first feeding point extends out of the first resonator;
the second resonator is fixedly arranged on the surface of the second layer of dielectric substrate facing the first layer of dielectric substrate, and a second feeding point coupled with the first feeding point extends out of the second resonator;
a first metalized via hole electrically connected with the first feed point and a second metalized via hole opposite to the second feed point are formed in the fourth layer of dielectric substrate, a third metalized via hole opposite to the second feed point is formed in the third layer of dielectric substrate, and a fourth metalized via hole electrically connected with the second feed point is formed in the second layer of dielectric substrate;
the first feed point is electrically connected with the input feeder by connecting the first metalized via hole, and the second feed point is electrically connected with the output feeder by sequentially connecting the fourth metalized via hole, the third metalized via hole and the second metalized via hole; or the first feed point is electrically connected with the output feeder by connecting the first metalized via hole, and the second feed point is electrically connected with the input feeder by sequentially connecting the fourth metalized via hole, the third metalized via hole and the second metalized via hole;
the input feeder line and the output feeder line are coupled to form a first transmission path so as to generate a first transmission zero point; the input feed line is coupled to the output feed line via the first resonator and the second resonator or the input feed line via the second resonator and the first resonator to form a second transmission path to generate a second transmission zero.
Further, the side walls of the first layer of dielectric substrate, the second layer of dielectric substrate, the third layer of dielectric substrate and the fourth layer of dielectric substrate are plated with metal. The side walls are plated with metal to form a closed structure of the band-pass filter, so that electromagnetic energy cannot be leaked out.
Further, the first layer dielectric substrate, the second layer dielectric substrate, the third layer dielectric substrate and the fourth layer dielectric substrate are identical in shape and size and are arranged in a concentric stacking mode.
Furthermore, the area of the fifth layer dielectric substrate is larger than that of the fourth layer dielectric substrate, the fourth layer dielectric substrate is arranged at the center of the fifth layer dielectric substrate, and the input feeder and the output feeder are respectively positioned at two sides of the fourth layer dielectric substrate. The feed of the band-pass filter adopts a coplanar waveguide mode and is positioned on two sides of the same layer of dielectric plate, so that the band-pass filter is convenient to integrate with other elements.
Further, the input feed line and the output feed line are microstrip lines having a characteristic impedance of 50 ohms.
Further, the first resonator and the second resonator are each a spiral structure having a gap.
Further, the spiral structure is formed in a rectangular surrounding manner.
Further, the first resonator and the second resonator have opposite surrounding directions.
Further, the fifth layer of dielectric substrate faces the surface of the fourth layer of dielectric substrate, and metal is plated outside the corresponding input feed line and the output feed line to form a first metal layer, and gaps are formed between the input feed line and the first metal layer and between the output feed line and the first metal layer.
Furthermore, two sides of the surface of the third layer of dielectric substrate facing the second layer of dielectric substrate are plated with metal to form a second metal layer, and a gap in the second metal layer is used for transmission signals to pass through so that the first feeding point is coupled with the second feeding point.
Compared with the prior art, the invention has the beneficial effects that: the invention is based on the multilayer dielectric plate stacking technology, the first resonator and the second resonator are respectively positioned on different layers, the resonant frequency can be changed by changing the length of the first resonator or the second resonator, and the first resonator and the second resonator are coupled through the slot. And two coupling paths are introduced, so that two transmission zeros can be generated, and the selectivity of the band-pass filter is greatly improved.
Drawings
Fig. 1 is a schematic perspective view of the overall structure of a filter according to an embodiment of the present invention;
fig. 2 is a schematic top view of the overall structure of a filter according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the overall structure of a filter according to an embodiment of the invention from the left;
FIG. 4 is a schematic front view of a fifth dielectric substrate according to an embodiment of the invention;
FIG. 5 is a schematic rear view of a fifth dielectric substrate according to an embodiment of the invention;
FIG. 6 is a schematic front view of a fourth dielectric substrate according to an embodiment of the invention;
FIG. 7 is a schematic rear view of a fourth dielectric substrate according to an embodiment of the invention;
FIG. 8 is a schematic front view of a third dielectric substrate according to an embodiment of the invention;
FIG. 9 is a schematic rear view of a third dielectric substrate according to an embodiment of the invention;
FIG. 10 is a schematic front view of a second dielectric substrate according to an embodiment of the invention;
FIG. 11 is a schematic rear view of a second dielectric substrate according to an embodiment of the invention;
FIG. 12 is a schematic front view of a first dielectric substrate according to an embodiment of the invention;
fig. 13 is a frequency response graph of an embodiment of the present invention.
In the drawings, each reference numeral denotes:
1. a first dielectric substrate; 2. a second dielectric substrate; 3. a third dielectric substrate; 4. a fourth dielectric substrate; 5. a fifth dielectric substrate; 6. a first resonator; 7. a second resonator; 8. inputting a feeder line; 9. outputting a feeder line; 21. a fourth metallized via; 31. a third metallized via; 32. a middle gap; 41. a first metallized via; 42. a second metallized via; 61. a first feeding point; 71. a second feeding point.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, as used herein, refer to an orientation or positional relationship indicated in the drawings that is solely for the purpose of facilitating the description and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be considered as limiting the present application.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
As shown in fig. 1 to fig. 12, a bandpass filter provided in this embodiment includes a first layer dielectric substrate 1, a second layer dielectric substrate 2, a third layer dielectric substrate 3, a fourth layer dielectric substrate 4, a fifth layer dielectric substrate 5, a first resonator 6, a second resonator 7, an input feeder 8, and an output feeder 9, where the first layer dielectric substrate 1, the second layer dielectric substrate 2, the third layer dielectric substrate 3, the fourth layer dielectric substrate 4, and the fifth layer dielectric substrate 5 are stacked in sequence; the input feed line 8 and the output feed line 9 are fixedly arranged (fixed by embedding, but not limited to embedding, and other fixing manners can be adopted, and details are not described herein) on the surface of the fifth-layer dielectric substrate 5 facing the fourth-layer dielectric substrate 4; compared with the filter realizing the same function, the structure of the band-pass filter has the advantage of smaller size, and the problem of miniaturization of the size requirement of the integrated filter is effectively solved.
As shown in fig. 6, the first resonator 6 is fixedly disposed on the surface of the fourth dielectric substrate 4 facing the third dielectric substrate 3, and a first feeding point 61 extends from the first resonator 6;
as shown in fig. 10, the second resonator 7 is fixedly disposed on the surface of the second dielectric substrate 2 facing the first dielectric substrate 1, and a second feeding point 71 coupled to the first feeding point extends from the second resonator 7;
as shown in fig. 6 to 11, a first metalized via 41 electrically connected to the first feeding point 61 and a second metalized via 42 opposite to the second feeding point 71 are formed on the fourth layer dielectric substrate 4, a third metalized via 31 opposite to the second feeding point 71 is formed on the third layer dielectric substrate 3, and a fourth metalized via 21 electrically connected to the second feeding point 71 is formed on the second layer dielectric substrate 2;
in this embodiment, the first feeding point 61 is electrically connected to the input feed line 8 by connecting the first metalized via 41, and the second feeding point 71 is electrically connected to the output feed line 9 by sequentially connecting the fourth metalized via 21, the third metalized via 31, and the second metalized via 42. The input feed line 8 is coupled to the output feed line 9 to form a first transmission path to produce a first transmission zero, and the input feed line 8 is coupled to the output feed line 9 via the first resonator 6 and the second resonator 7 to form a second transmission path to produce a second transmission zero. The embodiment effectively solves the problem of low frequency selectivity of the filter by introducing a plurality of coupling paths so as to generate two transmission zeros. In other embodiments, the first feeding point 61 may also be electrically connected to the output feed line 9 by connecting the first metalized via 41, and the second feeding point 71 is electrically connected to the input feed line 8 by sequentially connecting the fourth metalized via 21, the third metalized via 31, and the second metalized via 42. The input feed line 8 is coupled to the output feed line 9 to form a first transmission path to produce a first transmission zero, and the input feed line 8 is coupled to the output feed line 9 via the second resonator 7 and the first resonator 6 to form a second transmission path to produce a second transmission zero.
The present embodiment changes the external quality factor of the filter by changing the position of the first feeding point 61 and the second feeding point 71, and determines the external quality factor according to the fractional bandwidth of the filter, thereby achieving the best effect by changing the relative position of the first feeding point 61 and the second feeding point 71.
In this embodiment, the sidewalls of the first dielectric substrate layer 1, the second dielectric substrate layer 2, the third dielectric substrate layer 3, and the fourth dielectric substrate layer 4 are all plated with metal. The side walls are plated with metal to form a closed structure of the band-pass filter, so that electromagnetic energy cannot be leaked out.
As shown in fig. 1-3, the first layer dielectric substrate 1, the second layer dielectric substrate 2, the third layer dielectric substrate 3 and the fourth layer dielectric substrate 4 are all the same in shape and size, and these four layers are concentrically stacked. Preferably, the area of the fifth dielectric substrate 5 is larger than that of the fourth dielectric substrate 4, the fourth dielectric substrate 4 is arranged at the center of the fifth dielectric substrate 5, and the input feed line 8 and the output feed line 9 are respectively located at two sides of the fourth dielectric substrate 4. In other embodiments, the first dielectric substrate 1, the second dielectric substrate 2, the third dielectric substrate 3, and the fourth dielectric substrate 4 may not be particularly limited in shape and size. The feed of the band-pass filter of the embodiment is realized by adopting a coplanar waveguide mode, and the input feeder line 8 and the output feeder line 9 are positioned on two sides of the same layer of dielectric plate, so that the band-pass filter is convenient to integrate with other elements.
In this embodiment, the input feed line 8 and the output feed line 9 are microstrip lines with characteristic impedance of 50 ohms.
As shown in fig. 6 and 10, each of the first resonator 6 and the second resonator 7 has a spiral structure with a gap. Preferably, the spiral structures are all formed in a rectangular surrounding mode. More preferably, the surrounding directions of the first resonator 6 and the second resonator 7 are opposite.
In this embodiment, the center frequency of the band-pass filter is mainly determined by the lengths of the metal wires of the first resonator 6 and the second resonator 7, and the center frequency of the filter can be conveniently adjusted and controlled by changing the length of the spiral metal wire. The coupling coefficient and the external quality factor of the filter are respectively regulated and controlled by adjusting the distance between the first resonator 6 and the second resonator 7 and the position of the input/output port.
As shown in fig. 4, the fifth layer dielectric substrate 5 faces the surface of the fourth layer dielectric substrate 4, and metal is plated outside the corresponding input feed line 8 and the output feed line 9 to form a first metal layer, and a gap is formed between the input feed line 8 and the output feed line 9 and the first metal layer.
As shown in fig. 8, two sides of the surface of the third dielectric substrate 3 facing the second dielectric substrate 2 are plated with metal to form a second metal layer, and a transmission signal passes through the second metal layer at the middle gap 32 to couple the first feeding point 61 and the second feeding point 71. The present embodiment can control the coupling of signals by varying the size of the mid-gap 32.
As shown in fig. 1 to 3, in order to manufacture the bandpass filter, first, the circuit structure of each layer is printed, then each layer is stacked, and the sidewalls of the first layer dielectric substrate 1, the second layer dielectric substrate 2, the third layer dielectric substrate 3, and the fourth layer dielectric substrate 4 are plated with metal, and the first resonator 6, the second resonator 7, the input feed line 8, and the output feed line 9 are connected by using through holes. In this embodiment, the characteristic impedance of the coplanar waveguide transmission line of the fifth dielectric substrate 5 is 50 ohms, and the fifth dielectric substrate has two feed ports, which are respectively connected to the two SMA heads for feeding.
In the present embodiment, all the metallizations are, but not limited to, copper-clad, and will not be described in detail herein.
Fig. 13 is a frequency response curve of the bandpass filter in the present embodiment, which includes two curves S11 and S21, a curve S11 is a reflection characteristic curve of the signal port, and a curve S21 is a transmission characteristic curve of the signal. From the graph analysis, it can be seen that there are two transmission zeros at 0.31GHZ and 0.57GHZ, respectively, which greatly improve the frequency selectivity of the band pass filter.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (7)
1. The band-pass filter is characterized by comprising a first layer of dielectric substrate (1), a second layer of dielectric substrate (2), a third layer of dielectric substrate (3), a fourth layer of dielectric substrate (4), a fifth layer of dielectric substrate (5), a first resonator (6), a second resonator (7), an input feeder (8) and an output feeder (9), wherein the first layer of dielectric substrate (1), the second layer of dielectric substrate (2), the third layer of dielectric substrate (3), the fourth layer of dielectric substrate (4) and the fifth layer of dielectric substrate (5) are stacked in sequence; the side walls of the first layer of dielectric substrate (1), the second layer of dielectric substrate (2), the third layer of dielectric substrate (3) and the fourth layer of dielectric substrate (4) are plated with metal;
the input feeder line (8) and the output feeder line (9) are fixedly arranged on the surface of the fifth layer dielectric substrate (5) facing the fourth layer dielectric substrate (4), the surface of the fifth layer dielectric substrate (5) facing the fourth layer dielectric substrate (4) is plated with metal outside the corresponding input feeder line (8) and the output feeder line (9) to form a first metal layer, and gaps are formed between the input feeder line (8) and the first metal layer and between the output feeder line (9) and the first metal layer;
the first resonator (6) is fixedly arranged on the surface, facing the third layer dielectric substrate (3), of the fourth layer dielectric substrate (4), and a first feeding point (61) extends out of the first resonator (6);
the second resonator (7) is fixedly arranged on the surface, facing the first layer dielectric substrate (1), of the second layer dielectric substrate (2), a second feeding point (71) coupled with the first feeding point (61) extends out of the second resonator (7), two sides of the surface, facing the second layer dielectric substrate (2), of the third layer dielectric substrate (3) are plated with metal to form a second metal layer, and a transmission signal passes through a middle gap (32) of the second metal layer to enable the first feeding point (61) to be coupled with the second feeding point (71);
a first metalized via hole (41) electrically connected with the first feeding point (61) and a second metalized via hole (42) opposite to the second feeding point (71) are formed in the fourth layer of dielectric substrate (4), a third metalized via hole (31) opposite to the second feeding point (71) is formed in the third layer of dielectric substrate (3), and a fourth metalized via hole (21) electrically connected with the second feeding point (71) is formed in the second layer of dielectric substrate (2);
the first feeding point (61) is electrically connected with the input feed line (8) by connecting the first metalized via (41), and the second feeding point (71) is electrically connected with the output feed line (9) by connecting the fourth metalized via (21), the third metalized via (31), and the second metalized via (42) in sequence; or the first feeding point (61) is electrically connected with the output feeder (9) by connecting the first metalized via (41), and the second feeding point (71) is electrically connected with the input feeder (8) by sequentially connecting the fourth metalized via (21), the third metalized via (31), and the second metalized via (42);
the input feeder (8) and the output feeder (9) are coupled to form a first transmission path to generate a first transmission zero point; the input feed line (8) is coupled to the output feed line (9) via the first resonator (6) and the second resonator (7) or the input feed line (8) is coupled to the output feed line (9) via the second resonator (7) and the first resonator (6) to form a second transmission path to create a second transmission zero.
2. The bandpass filter according to claim 1, wherein the first dielectric substrate (1), the second dielectric substrate (2), the third dielectric substrate (3) and the fourth dielectric substrate (4) are identical in shape and size and are concentrically stacked.
3. A bandpass filter according to claim 1 or 2, characterized in that the fifth layer dielectric substrate (5) is larger in area than the fourth layer dielectric substrate (4), the fourth layer dielectric substrate (4) is arranged in the center of the fifth layer dielectric substrate (5), and the input feed line (8) and the output feed line (9) are respectively located on both sides of the fourth layer dielectric substrate (4).
4. A bandpass filter according to claim 3, characterized in that the input feed line (8) and the output feed line (9) are microstrip lines with a characteristic impedance of 50 ohms.
5. A bandpass filter as claimed in claim 1, characterized in that the first resonator (6) and the second resonator (7) are each a spiral structure with gaps.
6. The bandpass filter according to claim 5, wherein the spiral structure is formed in a rectangular surround.
7. A band-pass filter according to claim 5 or 6, characterized in that the first resonator (6) and the second resonator (7) have opposite winding directions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910222669.8A CN110011009B (en) | 2019-03-22 | 2019-03-22 | Band-pass filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910222669.8A CN110011009B (en) | 2019-03-22 | 2019-03-22 | Band-pass filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110011009A CN110011009A (en) | 2019-07-12 |
| CN110011009B true CN110011009B (en) | 2020-12-18 |
Family
ID=67167824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910222669.8A Active CN110011009B (en) | 2019-03-22 | 2019-03-22 | Band-pass filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110011009B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112615114B (en) * | 2020-12-07 | 2022-05-10 | 广东湾区智能终端工业设计研究院有限公司 | Antenna structure and mobile terminal |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203218415U (en) * | 2013-03-25 | 2013-09-25 | 华南理工大学 | Wide stopband LTCC band-pass filter based on magnetoelectric coupling canceling technology |
| CN103943923A (en) * | 2014-04-30 | 2014-07-23 | 南通大学 | LTCC (Low Temperature Co Fired Ceramic) technology based harmonic suppression band-pass filter and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7321284B2 (en) * | 2006-01-31 | 2008-01-22 | Tdk Corporation | Miniature thin-film bandpass filter |
| KR100712419B1 (en) * | 2006-06-08 | 2007-04-27 | 전자부품연구원 | Band pass filter |
-
2019
- 2019-03-22 CN CN201910222669.8A patent/CN110011009B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203218415U (en) * | 2013-03-25 | 2013-09-25 | 华南理工大学 | Wide stopband LTCC band-pass filter based on magnetoelectric coupling canceling technology |
| CN103943923A (en) * | 2014-04-30 | 2014-07-23 | 南通大学 | LTCC (Low Temperature Co Fired Ceramic) technology based harmonic suppression band-pass filter and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 双传输零点LTCC新型耦合谐振带通滤波器的设计;常钰敏等;《一种带通滤波器》;20180630;第24卷(第2期);第135-138页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110011009A (en) | 2019-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2109180B1 (en) | A directional coupler and a receiving or transmitting device | |
| CN111883914B (en) | Dielectric resonator broadband antenna with filter characteristic based on SIW feeding | |
| US9843085B2 (en) | Directional coupler | |
| JP5801362B2 (en) | Dielectric waveguide input / output structure and dielectric waveguide duplexer using the same | |
| JP6200613B1 (en) | Diplexer and transmission / reception system | |
| CN103378387A (en) | Wide-stop-band LTCC band-pass filter based on frequency selectivity coupling technology | |
| JP3531603B2 (en) | High frequency filter, filter device using the same, and electronic device using the same | |
| CN105990630A (en) | High-selectivity Balun band pass filter based on substrate integrated waveguide | |
| JPS58103202A (en) | Dielectric filter | |
| CN110011009B (en) | Band-pass filter | |
| CN107611540A (en) | One kind is mixed with consumption duplexer | |
| CN208767444U (en) | A kind of three-passband filter based on hybrid substrate integrated wave guide structure | |
| KR100249836B1 (en) | Duplexer with step-impedence resonator | |
| CN101764276A (en) | Quarter-wave resonant cavity band-pass filter of micro-strip coplanar waveguide composite structure | |
| US8471650B2 (en) | Diplexer, and wireless communication module and wireless communication apparatus using the same | |
| CN106058391B (en) | A kind of plane CQ duplexer based on novel matching network | |
| US20200028234A1 (en) | Diplexer | |
| JP2001203503A (en) | Strip line filter, duplexer, filter, communication unit and characteristic adjustment method for the strip line filter | |
| CN111697321B (en) | Filter antenna based on half-mode substrate integrated waveguide structure | |
| JP2009147907A (en) | Filter device, wireless communication module and wireless communication device using the same | |
| US10651524B2 (en) | Planar orthomode transducer | |
| WO2021077379A1 (en) | Band-stop filter and electronic device | |
| CN206076460U (en) | A kind of plane CQ duplexer based on new matching network | |
| JP2008289113A (en) | Bandpass filter, and radio communication module and wireless communication unit using the same | |
| CN109301412A (en) | A kind of three-passband filter based on hybrid substrate integrated wave guide structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |