CN110011009A - A kind of bandpass filter - Google Patents
A kind of bandpass filter Download PDFInfo
- Publication number
- CN110011009A CN110011009A CN201910222669.8A CN201910222669A CN110011009A CN 110011009 A CN110011009 A CN 110011009A CN 201910222669 A CN201910222669 A CN 201910222669A CN 110011009 A CN110011009 A CN 110011009A
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- layer
- medium substrate
- resonator
- feeder
- feeding point
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20327—Electromagnetic interstage coupling
- H01P1/20354—Non-comb or non-interdigital filters
- H01P1/20381—Special shape resonators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/2039—Galvanic coupling between Input/Output
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- Electromagnetism (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention discloses a kind of bandpass filters, including first layer medium substrate, second layer medium substrate, third layer medium substrate, the 4th layer of medium substrate, layer 5 medium substrate, the first resonator, the second resonator, incoming feeder and output feeder, first layer medium substrate, second layer medium substrate, third layer medium substrate, the 4th layer of medium substrate and layer 5 medium substrate are stacked gradually；Incoming feeder and output feeder are fixed on the surface of layer 5 medium substrate the 4th layer of medium substrate of direction.The present invention is based on multilayer acoustical panel Stack Technologies, first resonator and the second resonator are located at different layers, length by changing the first resonator or the second resonator can change resonance frequency, it is coupled between first resonator and the second resonator by cracking, this structure has the advantages that small in size, simple.And two coupling paths are introduced, two transmission zeros can be generated, substantially increase the selectivity of the bandpass filter.
Description
Technical field
The invention belongs to technical field of micro communication more particularly to a kind of bandpass filters.
Background technique
With the fast development of wireless communication system, the communication standards such as GSM, CDMA, WCDMA, WIMAX, WLAN start
To extensive use.For filter as the essential important devices of radio-frequency front-end, major function is led to for crossover frequency
It crosses the signal of certain frequency and blocks the signal of other frequencies, it is undamped and ending that ideal filter should meet passband
The infinitely great requirement of decaying in frequency.
High isolation between highly selective and passband is realized frequently with filter order is increased in traditional filter design
Property, but it is easy to cause the problems such as filter circuit configuration is complicated, filter size is too big, cost of manufacture increase in this way.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of bandpass filter, it is intended to it is too big to solve filter size
And the problem that selectivity is not high.
In order to solve the above technical problems, the invention is realized in this way, a kind of bandpass filter, including first layer medium base
Plate, second layer medium substrate, third layer medium substrate, the 4th layer of medium substrate, layer 5 medium substrate, the first resonator,
Two resonators, incoming feeder and output feeder, the first layer medium substrate, second layer medium substrate, third layer medium substrate,
4th layer of medium substrate and layer 5 medium substrate stack gradually；The incoming feeder and the output feeder are fixed at
The layer 5 medium substrate is towards on the surface of the 4th layer of medium substrate；
First resonator is fixed at table of the 4th layer of medium substrate towards the third layer medium substrate
On face, extend the first feeding point on first resonator；
Second resonator is fixed at the second layer medium substrate towards the table of the first layer medium substrate
On face, extend the second feeding point being coupled with first feeding point on second resonator；
The first metallization VIA being electrically connected with first feeding point and institute are offered on the 4th layer of medium substrate
The second opposite metallization VIA of the second feed position is stated, is offered on the third layer medium substrate and second feed
The opposite third metallization VIA in point position is offered on the second layer medium substrate and to be electrically connected with second feeding point
4th metallization VIA；
First feeding point is electrically connected by connecting first metallization VIA with the incoming feeder, and described the
Two feeding points and being sequentially connected the 4th metallization VIA, third metallization VIA and the second metallization VIA with it is described
Output feeder electrical connection；Or first feeding point is by connecting first metallization VIA and the output feeder electricity
Connection, second feeding point is by being sequentially connected the 4th metallization VIA, third metallization VIA and the second metallization
Via hole and be electrically connected with the incoming feeder；
The incoming feeder couples to form the first transmission paths to generate first transmission zero with the output feeder；Institute
State incoming feeder through first resonator and second resonator or the incoming feeder through second resonator and
First resonator couples to form the second transmission paths to generate the second transmission zero with the output feeder.
Further, the first layer medium substrate, second layer medium substrate, third layer medium substrate and the 4th layer of medium
The side wall of substrate plates metal.Side wall plates metal to allow the bandpass filter to form closed structure, to make electromagnetism
Energy will not leak out.
Further, the first layer medium substrate, second layer medium substrate, third layer medium substrate and the 4th layer of medium
Substrate shape size is identical, and this stacks setting with one heart.
Further, the layer 5 medium substrate area is greater than the 4th layer of medium substrate, the 4th layer of Jie
The center of the layer 5 medium substrate is arranged in matter substrate, and the incoming feeder and the output feeder are located at institute
State the two sides of the 4th layer of medium substrate.The feed of the bandpass filter uses co-planar waveguide mode, and is located on the same floor medium
The two sides of plate are integrated convenient for the bandpass filter and other elements.
Further, the incoming feeder and the output feeder are 50 ohm of characteristic impedance of microstrip line.
Further, first resonator and second resonator are the helical structure with gap.
Further, the helical structure is formed using straight-flanked ring around mode.
Further, first resonator and second resonator around contrary.
Further, the layer 5 medium substrate is described defeated in correspondence towards the surface of the 4th layer of medium substrate
Enter and plates metal outside feeder line and the output feeder to form the first metal layer, the incoming feeder and the output feeder and institute
Stating has gap between the first metal layer.
Further, the two sides on the third layer medium substrate towards the surface of the second layer medium substrate plate metal
It is passed through for transmission signal to form second metal layer, at the second metal layer intermediate space to allow first feeding point and institute
The second feeding point is stated to be coupled.
Compared with prior art, the present invention beneficial effect is: the present invention is based on multilayer acoustical panel Stack Technology, first is humorous
Vibration device and the second resonator are located at different layers, and the length by changing the first resonator or the second resonator can change humorous
Vibration frequency is coupled between the first resonator and the second resonator by cracking, and this structure has small in size, simple excellent
Point.And two coupling paths are introduced, two transmission zeros can be generated, substantially increase the selection of the bandpass filter
Property.
Detailed description of the invention
Fig. 1 is the integrally-built stereoscopic schematic diagram of filter of the embodiment of the present invention；
Fig. 2 is the integrally-built schematic top plan view of filter of the embodiment of the present invention；
Fig. 3 is the integrally-built left view schematic diagram of filter of the embodiment of the present invention；
Fig. 4 is the schematic front view of the layer 5 medium substrate of the embodiment of the present invention；
Fig. 5 is the schematic rear view of the layer 5 medium substrate of the embodiment of the present invention；
Fig. 6 is the schematic front view of the 4th layer of medium substrate of the embodiment of the present invention；
Fig. 7 is the schematic rear view of the 4th layer of medium substrate of the embodiment of the present invention；
Fig. 8 is the schematic front view of the third layer medium substrate of the embodiment of the present invention；
Fig. 9 is the schematic rear view of the third layer medium substrate of the embodiment of the present invention；
Figure 10 is the schematic front view of the second layer medium substrate of the embodiment of the present invention；
Figure 11 is the schematic rear view of the second layer medium substrate of the embodiment of the present invention；
Figure 12 is the schematic front view of the first layer medium substrate of the embodiment of the present invention；
Figure 13 is the frequency response curve of the embodiment of the present invention.
In the accompanying drawings, each appended drawing reference indicates:
1, first layer medium substrate；2, second layer medium substrate；3, third layer medium substrate；4, the 4th layer of medium substrate；
5, layer 5 medium substrate；6, the first resonator；7, the second resonator；8, incoming feeder；9, output feeder；21, the 4th metal
Change via hole；31, third metallization VIA；32, intermediate space；41, the first metallization VIA；42, the second metallization VIA；61,
First feeding point；71, the second feeding point.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
It should be noted that it can be directly another when element is referred to as " being fixed on " or " being set to " another element
On one element or indirectly on another element.When an element is known as " being connected to " another element, it can
To be directly to another element or be indirectly connected on another element.
It is to be appreciated that term " length ", " width ", "upper", "lower", "front", "rear", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "top", "bottom", "inner", "outside" is that orientation based on the figure or position are closed
System is merely for convenience of description the application and simplifies description, rather than the device or element of indication or suggestion meaning must have
Specific orientation is constructed and operated in a specific orientation, therefore should not be understood as the limitation to the application.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.In the description of the present application, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
As shown in Fig. 1-Figure 12, a kind of bandpass filter provided in this embodiment, including first layer medium substrate 1, second
Layer medium substrate 2, third layer medium substrate 3, the 4th layer of medium substrate 4, layer 5 medium substrate 5, the first resonator 6, second
Resonator 7, incoming feeder 8 and output feeder 9, the first layer medium substrate 1, second layer medium substrate 2, third layer medium base
Plate 3, the 4th layer of medium substrate 4 and layer 5 medium substrate 5 stack gradually；The incoming feeder 8 and the output feeder 9 are solid
Fixed setting (realized and fixed by embedded mode, but be not limited to be embedded in, can also be other fixed forms, this will not be detailed here)
In the layer 5 medium substrate 5 towards on the surface of the 4th layer of medium substrate 4；The bandpass filter of the present embodiment,
Structure has the advantages that smaller compared with the filter for realizing said function, efficiently solves and wants to integrated filter size
The problem of asking miniaturization.
As shown in fig. 6, first resonator 6 is fixed at the 4th layer of medium substrate 4 towards the third layer
On the surface of medium substrate 3, extend the first feeding point 61 on first resonator 6；
As shown in Figure 10, second resonator 7 is fixed at the second layer medium substrate 2 towards the first layer
On the surface of medium substrate 1, extend the second feeding point being coupled with first feeding point on second resonator 7
71；
As shown in Fig. 6-Figure 11, offers on the 4th layer of medium substrate 4 and to be electrically connected with first feeding point 61
First metallization VIA 41, second metallization VIA 42 opposite with 71 position of the second feeding point, the third layer medium
The third metallization VIA 31 opposite with 71 position of the second feeding point, the second layer medium substrate 2 are offered on substrate 3
On offer the 4th metallization VIA 21 being electrically connected with second feeding point 71；
In the present embodiment, first feeding point 61 is presented by connecting first metallization VIA 41 with the input
Line 8 is electrically connected, and second feeding point 71 is by being sequentially connected the 4th metallization VIA 21,31 and of third metallization VIA
Second metallization VIA 42 and be electrically connected with the output feeder 9.The incoming feeder 8 couples formation with the output feeder 9
First transmission paths are to generate first transmission zero, and the incoming feeder 8 is through first resonator 6 and second resonance
Device 7 and coupled with the output feeder 9 formed the second transmission paths to generate the second transmission zero.The present embodiment passes through introducing
Multiple coupling paths efficiently solve the problems, such as that filter frequencies selectivity is not high to generate two transmission zeros.Other
In embodiment, first feeding point 61 can also be by connecting first metallization VIA 41 and the output feeder 9
Electrical connection, second feeding point 71 is by being sequentially connected the 4th metallization VIA 21, third metallization VIA 31 and the
Two metallization VIAs 42 and be electrically connected with the incoming feeder 8.The incoming feeder 8 couples formation the with the output feeder 9
One transmission paths are to generate first transmission zero, and the incoming feeder 8 is through second resonator 7 and first resonator
6 and coupled with the output feeder 9 formed the second transmission paths to generate the second transmission zero.
The present embodiment changes the outer component of filter by changing the position of the first feeding point 61 and the second feeding point 71
Prime factor determines external sort factor according to the fractional bandwidth of filter, thus by changing the first feeding point 61 and second
The relative position of feeding point 71 is best to achieve the effect that.
In the present embodiment, the first layer medium substrate 1, second layer medium substrate 2, third layer medium substrate 3 and the 4th
The side wall of layer medium substrate 4 plates metal.Side wall plates metal to allow the bandpass filter to form closed structure, thus
Leak out electromagnetic energy will not.
As shown in Figure 1-Figure 3, the first layer medium substrate 1, second layer medium substrate 2, third layer medium substrate 3 and
Four layers of 4 shape size of medium substrate are identical, and this stacks setting with one heart.Preferably, the layer 5 medium substrate 5
Area is greater than the 4th layer of medium substrate 4, and the 4th layer of medium substrate 4 is arranged in the layer 5 medium substrate 5
Heart position, the incoming feeder 8 and the output feeder 9 are located at the two sides of the 4th layer of medium substrate 4.In other realities
It applies in example, it can also be to the first layer medium substrate 1, second layer medium substrate 2, third layer medium substrate 3 and the 4th layer of Jie
Matter substrate 4 does not make being particularly limited on shape size.The feed of the present embodiment bandpass filter uses co-planar waveguide mode to realize,
And incoming feeder 8 and output feeder 9 are located on the same floor the two sides of dielectric-slab, consequently facilitating the bandpass filter and other elements into
Row is integrated.
In the present embodiment, the incoming feeder 8 and the output feeder 9 are 50 ohm of characteristic impedance of microstrip line.
As shown in figs. 6 and 10, first resonator 6 and second resonator 7 are the spiral knot with gap
Structure.Preferably, the helical structure is all made of straight-flanked ring and is formed around mode.It is furthermore preferred that first resonator 6 and described
Surrounding for two resonators 7 is contrary.
In the present embodiment, the bandpass filter centre frequency is mainly by the metal wire of the first resonator 6 and the second resonator 7
Length determines that the length by changing spirality metal line regulates and controls the centre frequency of filter in which can be convenient.By adjusting the
The position of the spacing and input/output port of one resonator 6 and second resonator 7 regulates and controls the coefficient of coup of filter respectively
With external sort factor.
As shown in figure 4, the layer 5 medium substrate 5 is towards the surface of the 4th layer of medium substrate 4, described in correspondence
Metal is plated outside incoming feeder 8 and the output feeder 9 to form the first metal layer, the incoming feeder 8 and output feedback
There is gap between line 9 and the first metal layer.
As shown in figure 8, the two sides on the third layer medium substrate 3 towards the surface of the second layer medium substrate 2 plate
Metal is passed through for transmission signal at the second metal layer intermediate space 32 with forming second metal layer to allow described first to feed
Point 61 is coupled with second feeding point 71.The present embodiment can control signal by changing the size of intermediate space 32
Coupling.
As shown in Figure 1-Figure 3, in order to process the bandpass filter, firstly, each layer of circuit structure is printed, then
Each layer heap is gathered into folds, and in first layer medium substrate 1, second layer medium substrate 2, third layer medium substrate 3 and the 4th layer
The side wall of medium substrate 4 plates metal, uses between the first resonator 6, the second resonator 7 and incoming feeder 8, output feeder 9
Through-hole connection.In the present embodiment, the characteristic impedance of the coplanar waveguide transmission line of layer 5 medium substrate 5 is 50 ohm, shares two
A feed port connects two SMA respectively and is fed.
In the present embodiment, all plating metals are but are not limited to cover copper, and this will not be detailed here.
Figure 13 is the frequency response curve of the bandpass filter in the present embodiment, includes two curves S11 and S21 in figure,
Curve S11 is the coverage diagram of signal port, and curve S21 is the transfer curve of signal.By map analysis it is found that having
Two transmission zeros, are located at 0.31GHZ and 0.57GHZ, the two transmission zeros greatly improve the bandpass filtering
The frequency selectivity of device.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of bandpass filter, which is characterized in that including first layer medium substrate (1), second layer medium substrate (2), third
Layer medium substrate (3), the 4th layer of medium substrate (4), layer 5 medium substrate (5), the first resonator (6), the second resonator
(7), incoming feeder (8) and output feeder (9), it is the first layer medium substrate (1), the second layer medium substrate (2), described
Third layer medium substrate (3), the 4th layer of medium substrate (4) and the layer 5 medium substrate (5) stack gradually；It is described defeated
Enter feeder line (8) and the output feeder (9) is fixed at the layer 5 medium substrate (5) towards the 4th layer of medium
On the surface of substrate (4)；
First resonator (6) is fixed at the 4th layer of medium substrate (4) towards the third layer medium substrate (3)
Surface on, extend the first feeding point (61) on first resonator (6)；
Second resonator (7) is fixed at the second layer medium substrate (2) towards the first layer medium substrate (1)
Surface on, extend the second feeding point (71) being coupled with first feeding point (61) on second resonator (7)；
The first metallization VIA being electrically connected with first feeding point (61) is offered on the 4th layer of medium substrate (4)
(41), second metallization VIA (42) opposite with the second feeding point (71) position, on the third layer medium substrate (3)
Offer the third metallization VIA (31) opposite with the second feeding point (71) position, the second layer medium substrate (2)
On offer the 4th metallization VIA (21) being electrically connected with second feeding point (71)；
First feeding point (61) is electrically connected by connecting first metallization VIA (41) with the incoming feeder (8)
Connect, second feeding point (71) by be sequentially connected the 4th metallization VIA (21), third metallization VIA (31) and
Second metallization VIA (42) and be electrically connected with the output feeder (9)；Or first feeding point (61) passes through connection institute
It states the first metallization VIA (41) and is electrically connected with the output feeder (9), second feeding point (71) is by being sequentially connected
4th metallization VIA (21), third metallization VIA (31) and the second metallization VIA (42) and with the incoming feeder
(8) it is electrically connected；
The incoming feeder (8) couples with the output feeder (9) forms the first transmission paths to generate first transmission zero；
The incoming feeder (8) is through first resonator (6) and second resonator (7) or the incoming feeder (8) through institute
State the second resonator (7) and first resonator (6), coupled with the output feeder (9) formed the second transmission paths with
Generate the second transmission zero.
2. bandpass filter as described in claim 1, which is characterized in that the first layer medium substrate (1), second layer medium
The side wall of substrate (2), third layer medium substrate (3) and the 4th layer of medium substrate (4) plates metal.
3. bandpass filter as described in claim 1, which is characterized in that the first layer medium substrate (1), second layer medium
Substrate (2), third layer medium substrate (3) are identical with the 4th layer of medium substrate (4) shape size, and this is stacked with one heart
Setting.
4. bandpass filter as claimed in claim 1 or 3, which is characterized in that layer 5 medium substrate (5) area is greater than
The 4th layer of medium substrate (4), the 4th layer of medium substrate (4) are arranged at the center of the layer 5 medium substrate (5)
Position, the incoming feeder (8) and the output feeder (9) are located at the two sides of the 4th layer of medium substrate (4).
5. bandpass filter as claimed in claim 4, which is characterized in that the incoming feeder (8) and the output feeder (9)
It is 50 ohm of characteristic impedance of microstrip line.
6. bandpass filter as described in claim 1, which is characterized in that first resonator (6) and second resonance
Device (7) is the helical structure with gap.
7. bandpass filter as claimed in claim 6, which is characterized in that the helical structure is using straight-flanked ring around mode shape
At.
8. bandpass filter as claimed in claims 6 or 7, which is characterized in that first resonator (6) and described second humorous
Surrounding for device (7) of shaking is contrary.
9. bandpass filter as described in claim 1, which is characterized in that the layer 5 medium substrate (5) is towards described
The surface of four layers of medium substrate (4) plates metal outside the correspondence incoming feeder (8) and the output feeder (9) to be formed
The first metal layer has gap between the incoming feeder (8) and the output feeder (9) and the first metal layer.
10. bandpass filter according to claim 1, which is characterized in that the third layer medium substrate (3) is described in
The two sides on the surface of second layer medium substrate (2) plate metal to form second metal layer, the second metal layer intermediate space
(32) it passes through at for transmission signal to allow first feeding point (61) to be coupled with second feeding point (71).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910222669.8A CN110011009B (en) | 2019-03-22 | 2019-03-22 | Band-pass filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910222669.8A CN110011009B (en) | 2019-03-22 | 2019-03-22 | Band-pass filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110011009A true CN110011009A (en) | 2019-07-12 |
| CN110011009B CN110011009B (en) | 2020-12-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910222669.8A Active CN110011009B (en) | 2019-03-22 | 2019-03-22 | Band-pass filter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112615114A (en) * | 2020-12-07 | 2021-04-06 | 广东湾区智能终端工业设计研究院有限公司 | Antenna structure and mobile terminal |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070176727A1 (en) * | 2006-01-31 | 2007-08-02 | Chen Qiang R | Miniature thin-film bandpass filter |
| US20070285193A1 (en) * | 2006-06-08 | 2007-12-13 | Yoo Chan-Sei | Bandpass filter |
| CN203218415U (en) * | 2013-03-25 | 2013-09-25 | 华南理工大学 | Wide stopband LTCC band-pass filter based on magnetoelectric coupling canceling technology |
| CN103943923A (en) * | 2014-04-30 | 2014-07-23 | 南通大学 | LTCC (Low Temperature Co Fired Ceramic) technology based harmonic suppression band-pass filter and manufacturing method thereof |
-
2019
- 2019-03-22 CN CN201910222669.8A patent/CN110011009B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070176727A1 (en) * | 2006-01-31 | 2007-08-02 | Chen Qiang R | Miniature thin-film bandpass filter |
| US20070285193A1 (en) * | 2006-06-08 | 2007-12-13 | Yoo Chan-Sei | Bandpass filter |
| CN203218415U (en) * | 2013-03-25 | 2013-09-25 | 华南理工大学 | Wide stopband LTCC band-pass filter based on magnetoelectric coupling canceling technology |
| CN103943923A (en) * | 2014-04-30 | 2014-07-23 | 南通大学 | LTCC (Low Temperature Co Fired Ceramic) technology based harmonic suppression band-pass filter and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 常钰敏等: "双传输零点LTCC新型耦合谐振带通滤波器的设计", 《一种带通滤波器》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112615114A (en) * | 2020-12-07 | 2021-04-06 | 广东湾区智能终端工业设计研究院有限公司 | Antenna structure and mobile terminal |
| CN112615114B (en) * | 2020-12-07 | 2022-05-10 | 广东湾区智能终端工业设计研究院有限公司 | Antenna structure and mobile terminal |
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| CN110011009B (en) | 2020-12-18 |
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