CN201498573U - Half-mode substrate integrated waveguide filter with high Q factor and low loss - Google Patents
Half-mode substrate integrated waveguide filter with high Q factor and low loss Download PDFInfo
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- CN201498573U CN201498573U CN2009200440491U CN200920044049U CN201498573U CN 201498573 U CN201498573 U CN 201498573U CN 2009200440491 U CN2009200440491 U CN 2009200440491U CN 200920044049 U CN200920044049 U CN 200920044049U CN 201498573 U CN201498573 U CN 201498573U
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Abstract
Disclosed is a half-mode substrate integrated waveguide filter with high Q factor and low loss. The filter comprises a front metal patch (3), an upper layer medium substrate (1), an intermediate metal layer (4), a lower layer medium substrate (2) and a bottom metal layer (5) from top to bottom, and is used to resolve the integration problem of microwave and millimeter-wave filters. Compared with original half-mode substrate integrated waveguide filters, the half-module substrate integrated waveguide filter has the advantages of smaller volume, easy integration, low loss and simple structure, and is suitable for design of microwave and millimeter-wave integrated circuits. Compared with the micro-strip structure, the folded half-mode substrate integrated waveguide filter has higher Q factor and comparatively low loss.
Description
Technical field
High Q value low-loss half-modular substrate integral wave guide filter can be applied to the design of microwave and millimeter wave circuit, also can be used for the design of microwave and millimeter wave integrated circuit, belongs to the technical field of microwave filter.
Background technology
In existing millimeter wave and microwave device, substrate integration wave-guide and half module substrate integrated wave guide structure composition the advantage of microstrip line and rectangular waveguide: complanation, low cost, low section, easy of integration, low-loss etc.But it is, bigger in the size of low-frequency range structure with respect to microstrip line construction.The area of folding self-die substrate integrated waveguide is half of half module substrate integrated wave guide, and 1/4th of substrate integration wave-guide has further reduced area, has improved the integrated level of planar circuit.The present invention utilizes multilayer board technology to propose and realized two kinds of folding self-die substrate integrated waveguide plane-of-weakness joint type filter constructions; the area of this structure only is operated in half of half module substrate integrated wave guide plane-of-weakness joint type filter of same frequency range; simultaneously function admirable, loss are low, easy of integration, have important application value.
Summary of the invention
Technical problem: the purpose of this utility model provides the high Q value low-loss half-modular substrate integral wave guide filter that a kind of usefulness solves the integration problem of microwave and millimeter wave filter, it is littler with respect to original half-modular substrate integral wave guide filter volume, this filter have be easy to integrated, loss is low, characteristic of simple structure, is suitable for the design of microwave and millimeter wave integrated circuit; This folding self-die substrate integrated waveguide is compared with microstrip structure and is had higher Q value, lower loss.
Technical scheme: high Q value low-loss half-modular substrate integral wave guide filter of the present utility model is a sandwich construction, is respectively front metal paster, top dielectric substrate, intermediate metal layer, layer dielectric substrate, bottom metal layer from top to bottom; Be respectively equipped with input and output at the two ends of half-modular substrate integral wave guide filter, be provided with one in a side of the top dielectric substrate of half-modular substrate integral wave guide filter and layer dielectric substrate and ranked first the sidewall that plated-through hole constitutes half-modular substrate integral wave guide filter, and connect front metal paster, intermediate metal layer and bottom metal layer); Opposite side at the layer dielectric substrate has another to ranked second the H face metallic walls that plated-through hole connects intermediate metal layer and bottom metal layer formation half-modular substrate integral wave guide filter; On half-modular substrate integral wave guide filter front metal paster or intermediate metal layer, be provided with the line of rabbet joint.
The plane of described front metal paster is the structure of " U " shape, when the line of rabbet joint was located at the front metal paster, the line of rabbet joint was located at the interior bottom of structure of this " U " shape, and the line of rabbet joint has a plurality of, line of rabbet joint maximum in the middle of being positioned at, other line of rabbet joint of line of rabbet joint both sides reduces successively in the middle of being positioned at.
The plane of described intermetallic metal paster is up big and down small trapezium structure, when the line of rabbet joint was located at intermediate metal layer, the line of rabbet joint was located at the trapezium structure upside of intermediate metal layer, and the line of rabbet joint has a plurality of, line of rabbet joint maximum in the middle of being positioned at, other line of rabbet joint of line of rabbet joint both sides reduces successively in the middle of being positioned at.
Beneficial effect: high Q value low-loss half-modular substrate integral wave guide filter of the present utility model has the following advantages:
1 :) this folding self-die substrate integrated waveguide is easy to integrated in the design of microwave and millimeter wave circuit.This is because this filter device is realized on dielectric substrate fully, utilizes the dielectric constant of dielectric substrate can regulate the size of this filter size very easily, thereby realizes preferably and other microwave and millimeter wave circuit integrated;
2 :) this half module substrate integrated wave guide has higher Q value, lower loss.This is that so compare with microstrip circuit, its Q value is than higher because this structure has and the similar characteristic of rectangular metal waveguide, and loss ratio is lower;
3 :) centre frequency of this folding self-die substrate integrated waveguide second passband is about three times of centre frequency of first passband, and the centre frequency of general filter second passband is about two times of centre frequency of first passband, so its working band is wideer;
4 :) this folding self-die substrate integrated waveguide small-sized, improved the integrated level of low-frequency range.Because the area of folding self-die substrate integrated waveguide filter is half of half module substrate integrated wave guide of same working frequency range.
Description of drawings
Fig. 1 is high Q value low-loss half-modular substrate integral wave guide filter layer structure schematic diagram,
Fig. 2 is front metal paster 3 structural representations of the line of rabbet joint when being etched in front metal paster 3,
Fig. 3 is intermediate metal layer 4 structural representations of the line of rabbet joint when being etched in intermediate metal layer 4,
Fig. 4 is the dimension mark figure of first kind of filter of embodiment one.
Fig. 5 is the dimension mark figure of second kind of filter of embodiment one.
Fig. 6 is one first kind of actual test result of filter of embodiment.
Fig. 7 is one second kind of actual test result of filter of embodiment.
Have among Fig. 1 and Fig. 2: top dielectric substrate 1, layer dielectric substrate 2, front metal paster 3, intermediate metal layer 4, bottom metal layer 5, second plated-through hole 6, first plated-through hole 7, input 8, output 9, the line of rabbet joint 10, microstrip line 11.
Embodiment
High Q value low-loss half-modular substrate integral wave guide filter structure of the present utility model is to put forward according to the folding self-die substrate integrated waveguide structure, and this integrated waveguide is realized by double-layer printing circuit board (PCB) technology.Folding substrate integration wave-guide is made of double-deck same substrate, is respectively the upper and lower substrate.The two sides of every layer of substrate all has metal to apply copper, so this integrated wave guide structure has the three-layer metal layer, is respectively upper strata metal covering, metallic intermediate layer face and underlying metal face.There are two row's plated-through holes the both sides of folding self-die substrate integrated waveguide, and a row is first metal throuth hole, leads to the layer dielectric substrate from the top dielectric substrate, links together with upper strata metal covering, metallic intermediate layer face and the underlying metal face of this waveguiding structure.Another row's metal aperture is a blind hole, in the layer dielectric substrate through-hole, links together with the metallic intermediate layer and the underlying metal of this waveguiding structure.Two row's plated-through holes constitute waveguide sidewalls.Be respectively equipped with input and output at the two ends of folding self-die substrate integrated waveguide.The metal patch of intermediate metal layer and first metal throuth hole have the certain spacing size, and the electric field of input signal folds into the layer dielectric substrate from the top dielectric substrate along intermediate metal layer like this, and the realization of filter forms in the metal surface cutting.First kind of filter is to realize that in upper strata metal covering cutting second kind of filter is to realize in the intermediate metal layer cutting.One section half module substrate integrated wave guide between two lines of rabbet joint constitutes a quarter-wave resonance device, controls the power that is coupled between the resonator by the size that changes the line of rabbet joint, makes total play the effect of filter.The high pass characteristic of half module substrate integrated wave guide has improved the selectivity of filter in addition.And the lower metal of this filter is metal covering entirely.
The utility model relates to the folding self-die substrate integrated waveguide filter construction of millimeter wave and microwave device; the two sides of top dielectric substrate 1 is respectively equipped with that front metal paster 3 and intermediate metal layer 4 form, and the two sides of layer dielectric substrate 2 is respectively equipped with that underlying metal 5 and intermediate metal layer 4 form.One ranked second plated-through hole 6 is blind hole, has got through layer dielectric substrate 2, and intermediate metal layer 4 and bottom metal layer 5 are linked together.Another row's plated-through hole 7 is a through hole, and top dielectric of having punched 1 and layer dielectric 2 couple together front metal paster 3, intermetallic metal 4 and underlying metal 5.The diameter of plated-through hole is 0.4 millimeter, and the spacing between the center, adjacent metal hole is 0.8 millimeter.Second plated-through hole 6 and first plated-through hole 7 constitute the metallic walls of half module substrate integrated wave guide.First metal throuth hole 7 is at regular intervals with the metal patch of intermediate metal layer 4; its size has determined the transmission characteristic and the bandwidth of this integrated waveguide, and selecting transmission characteristic that suitable size can make folding self-die substrate integrated waveguide and width is that the transmission characteristic of individual layer half module substrate integrated wave guide of folding self-die substrate integrated waveguide twice is identical.For convenient test, at the upper strata metal covering, microstrip line 11 couplings are connected in folding self-die substrate integrated waveguide.Be respectively equipped with input 8 and output 9 at the two ends of folding self-die substrate integrated waveguide; the line of rabbet joint 10 of first kind of filter is etched in upper strata metal covering 3; the line of rabbet joint of second kind of filter is etched in intermediate metal layer 4; the width of this filter is half of half-modular substrate integral wave guide filter of same working frequency range, 1/4th of substrate integration wave-guide.
Embodiment one high Q value low-loss half-modular substrate integral wave guide filter
Fig. 3 is the folding self-die substrate integrated waveguide that the line of rabbet joint is etched in the upper strata metal covering,
Fig. 4 is the folding self-die substrate integrated waveguide that the line of rabbet joint is etched in the metallic intermediate layer face,
Fig. 5 is that the utility model is one first kind of actual test result of filter of embodiment,
Fig. 6 is that the utility model is one second kind of actual test result of filter of embodiment,
Table one is the size of first kind of filter of embodiment one,
Table two is sizes of second kind of filter of embodiment one.
Table one
Table two
Claims (3)
1. one kind high Q value low-loss half-modular substrate integral wave guide filter, it is characterized in that this filter is a sandwich construction, be respectively front metal paster (3), top dielectric substrate (1), intermediate metal layer (4), layer dielectric substrate (2), bottom metal layer (5) from top to bottom; Be respectively equipped with input (8) and output (9) at the two ends of half-modular substrate integral wave guide filter, be provided with one in a side of the top dielectric substrate (1) of half-modular substrate integral wave guide filter and layer dielectric substrate (2) and ranked first the sidewall that plated-through hole (7) constitutes half-modular substrate integral wave guide filter, and connect front metal paster (3), intermediate metal layer (4) and bottom metal layer (5); Opposite side at layer dielectric substrate (2) has another to ranked second the H face metallic walls that plated-through hole (6) connects intermediate metal layer (4) and bottom metal layer (5) formation half-modular substrate integral wave guide filter; On half-modular substrate integral wave guide filter front metal paster (3) or intermediate metal layer (4), be provided with the line of rabbet joint (10).
2. high Q value low-loss half-modular substrate integral wave guide filter according to claim 1; it is characterized in that the structure of the plane of described front metal paster (3) for " U " shape; when the line of rabbet joint (10) is located at front metal paster (3); the line of rabbet joint (10) is located at the interior bottom of structure of this " U " shape; the line of rabbet joint (10) has a plurality of; line of rabbet joint maximum in the middle of being positioned at, other line of rabbet joint of line of rabbet joint both sides reduces successively in the middle of being positioned at.
3. high Q value low-loss half-modular substrate integral wave guide filter according to claim 1; the plane that it is characterized in that described intermetallic metal paster (4) is up big and down small trapezium structure; when the line of rabbet joint (10) is located at intermediate metal layer (4); the line of rabbet joint (10) is located at the trapezium structure upside of intermediate metal layer (4); the line of rabbet joint (10) has a plurality of; line of rabbet joint maximum in the middle of being positioned at, other line of rabbet joint of line of rabbet joint both sides reduces successively in the middle of being positioned at.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200440491U CN201498573U (en) | 2009-06-10 | 2009-06-10 | Half-mode substrate integrated waveguide filter with high Q factor and low loss |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009200440491U CN201498573U (en) | 2009-06-10 | 2009-06-10 | Half-mode substrate integrated waveguide filter with high Q factor and low loss |
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| CN201498573U true CN201498573U (en) | 2010-06-02 |
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| CN2009200440491U Expired - Fee Related CN201498573U (en) | 2009-06-10 | 2009-06-10 | Half-mode substrate integrated waveguide filter with high Q factor and low loss |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102868009A (en) * | 2012-09-07 | 2013-01-09 | 上海交通大学 | Integrated waveguide filter of medium loaded foldable substrate |
| CN103825101A (en) * | 2014-02-28 | 2014-05-28 | 电子科技大学 | Broadband flat plate array antenna |
| CN107565225A (en) * | 2017-07-18 | 2018-01-09 | 东南大学 | A kind of array antenna structure and multilayer via structure |
| CN109830789A (en) * | 2019-01-25 | 2019-05-31 | 南京邮电大学 | A kind of broadband band-pass filter based on folded substrate integrated waveguide and complementary openings resonant ring |
-
2009
- 2009-06-10 CN CN2009200440491U patent/CN201498573U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102868009A (en) * | 2012-09-07 | 2013-01-09 | 上海交通大学 | Integrated waveguide filter of medium loaded foldable substrate |
| CN102868009B (en) * | 2012-09-07 | 2015-04-01 | 上海交通大学 | Integrated waveguide filter of medium loaded foldable substrate |
| CN103825101A (en) * | 2014-02-28 | 2014-05-28 | 电子科技大学 | Broadband flat plate array antenna |
| CN103825101B (en) * | 2014-02-28 | 2015-12-09 | 电子科技大学 | Broadband flat plate array antenna |
| CN107565225A (en) * | 2017-07-18 | 2018-01-09 | 东南大学 | A kind of array antenna structure and multilayer via structure |
| CN109830789A (en) * | 2019-01-25 | 2019-05-31 | 南京邮电大学 | A kind of broadband band-pass filter based on folded substrate integrated waveguide and complementary openings resonant ring |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100602 Termination date: 20160610 |