CN103825101B - Broadband Panel Array Antenna - Google Patents
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Abstract
Description
技术领域technical field
本发明涉及微波毫米波天线技术领域，具体涉及一种宽带平板阵列天线。The invention relates to the technical field of microwave and millimeter wave antennas, in particular to a broadband flat panel array antenna.
背景技术Background technique
在无线通信系统中，天线是信号接收和发射的关键部件。随着无线移动通信技术的发展，要求微波毫米波天线在保证电气性能的同时，尽可能实现低剖面、高增益、宽频带等特性。In wireless communication systems, antennas are key components for signal reception and transmission. With the development of wireless mobile communication technology, microwave and millimeter wave antennas are required to achieve low-profile, high-gain, and wide-band characteristics as much as possible while ensuring electrical performance.
低剖面天线的实现方式主要有印刷天线和波导缝隙天线。印刷天线厚度小，重量轻，易与安装载体共形；缺点是馈线在毫米波频率上损耗大，难以实现较高增益。波导缝隙天线具有较高的辐射效率，易实现波束赋形；缺点是体积偏大，带宽窄，成本高。近年来基片集成波导作为一种新的传输线，在毫米波频段上具有较小的馈线损耗，同时易与平面电路集成，是一种优良的毫米波馈线结构。利用缝隙槽或印刷天线作为辐射单元，再利用基片集成波导作为馈电网络成为了毫米波天线组阵的一种较好选择。The implementation of low-profile antenna mainly includes printed antenna and waveguide slot antenna. The printed antenna has small thickness, light weight, and is easy to conform to the installation carrier; the disadvantage is that the feeder has a large loss at millimeter wave frequencies, and it is difficult to achieve high gain. The waveguide slot antenna has high radiation efficiency and is easy to realize beam forming; the disadvantages are large volume, narrow bandwidth and high cost. In recent years, as a new transmission line, substrate-integrated waveguide has a small feeder loss in the millimeter-wave frequency band and is easy to integrate with planar circuits. It is an excellent millimeter-wave feeder structure. Using slots or printed antennas as radiating elements and using substrate-integrated waveguides as feeding networks has become a better choice for millimeter-wave antenna arrays.
例如，有人提出了一种毫米波阵列天线，其包含一层介质层和两层金属覆铜层。上层金属覆铜层上开辐射槽，下层金属覆铜层作为地平面，中间介质层中利用金属化过孔构成功率分配网络。该结构形式结构紧凑，辐射效率高，天线最大增益33.1dBi，缺点是带宽窄，1dB增益带宽只有2%。For example, a millimeter-wave array antenna has been proposed, which includes a dielectric layer and two metal copper clad layers. Radiation slots are opened on the upper metal copper clad layer, the lower metal copper clad layer is used as a ground plane, and metallized via holes are used in the middle dielectric layer to form a power distribution network. The structure is compact, the radiation efficiency is high, and the maximum gain of the antenna is 33.1dBi. The disadvantage is that the bandwidth is narrow, and the 1dB gain bandwidth is only 2%.
也有人提出了一种可适用于毫米波频段的基片集成阵列天线。该结构包含三层金属覆铜层和两层介质层，下层金属覆铜层、中层金属覆铜层和下层介质层构成基片集成波导馈电网络，上层金属覆铜层为圆形贴片辐射单元，上层介质层为上层金属覆铜层中贴片辐射单元提供支撑。天线采用了1×4串联缝隙馈电，再用一分四功分器构成4×4阵列。该阵列1dB增益带宽可达6%，但考虑到其馈电采用了串馈结构，随阵列天线口径加大，其增益带宽会逐渐下降；此外，其馈电结构面积较大，不利于小型化，很难进行大阵列组阵，以实现高增益。Someone also proposed a substrate-integrated array antenna applicable to the millimeter-wave frequency band. The structure consists of three metal copper clad layers and two dielectric layers, the lower metal copper clad layer, the middle metal copper clad layer and the lower dielectric layer constitute the substrate integrated waveguide feeding network, and the upper metal copper clad layer is a circular patch radiation unit, and the upper dielectric layer provides support for the patch radiation unit in the upper metal copper clad layer. The antenna adopts 1×4 serial slot feed, and then uses a one-to-four power divider to form a 4×4 array. The 1dB gain bandwidth of the array can reach 6%, but considering that its feed adopts a series feed structure, its gain bandwidth will gradually decrease as the array antenna diameter increases; in addition, its feed structure has a large area, which is not conducive to miniaturization , it is difficult to form a large array to achieve high gain.
从现有报道可以发现，虽然基片集成波导在毫米波天线及阵列设计中具有优势，但并没有很好的解决高增益和宽频带之间的矛盾，要同时实现阵列天线平面化、高增益、宽频带特性，困难较大。此外还有进一步增大增益的实际需求，考虑到长的基片集成波导在毫米波频率的介质损耗也相当可观，天线阵元增多带来的增益提升会被馈线长度增加带来的损耗所抵消，甚至出现负增长。From the existing reports, it can be found that although the substrate-integrated waveguide has advantages in millimeter-wave antenna and array design, it does not solve the contradiction between high gain and broadband. , Broadband characteristics, more difficult. In addition, there is an actual need to further increase the gain. Considering that the dielectric loss of the long substrate integrated waveguide is also considerable at the millimeter wave frequency, the gain increase brought by the increase in the number of antenna elements will be offset by the loss caused by the increase in the length of the feeder. , or even negative growth.
发明内容Contents of the invention
本发明所要解决的技术问题是提供一种既能够实现宽频带且又可以提高阵列天线增益的宽带平板阵列天线。The technical problem to be solved by the present invention is to provide a broadband panel array antenna that can realize wide frequency band and increase the gain of the array antenna.
本发明解决上述技术问题所采用的技术方案是：该宽带平板阵列天线，包括从上往下依次层叠设置的第一金属覆铜层、第一介质层、第二金属覆铜层、第二介质层、第三金属覆铜层，所述第一金属覆铜层上刻蚀有多组微带子阵，所述每组微带子阵由两个微带贴片单元和连接两个微带贴片单元的微带馈线组成；第二介质层上设置有“工”字形的基片集成波导馈电网络，所述基片集成波导馈电网络包括多个基片集成波导单元以及功分调谐孔，所述基片集成波导单元由两排边壁孔以及位于两排边壁孔一端的短路孔构成，所述边壁孔、短路孔、功分调谐孔均贯穿第二金属覆铜层、第二介质层、第三金属覆铜层，在第二金属覆铜层上开有多个耦合槽，所述多个耦合槽分别与多个基片集成波导单元一一对应，每个耦合槽的中心线与对应的基片集成波导单元的中心线之间存在间隙，所述每个耦合槽同时对两组微带子阵馈电，每组微带子阵中的两个微带贴片单元以及微带馈线对称的分布在耦合槽的两侧。The technical solution adopted by the present invention to solve the above-mentioned technical problems is: the broadband panel array antenna includes a first metal copper-clad layer, a first dielectric layer, a second metal copper-clad layer, and a second dielectric layer stacked sequentially from top to bottom. Layer, the third metal copper clad layer, etched on the first metal copper clad layer are multiple groups of microstrip sub-arrays, each group of microstrip sub-arrays consists of two microstrip patch units and connects two microstrip patch The microstrip feeder line of the unit; the second dielectric layer is provided with an "I"-shaped substrate integrated waveguide feed network, and the substrate integrated waveguide feed network includes a plurality of substrate integrated waveguide units and power division tuning holes. The substrate integrated waveguide unit is composed of two rows of side wall holes and a short circuit hole located at one end of the two rows of side wall holes. The dielectric layer, the third metal copper-clad layer, and a plurality of coupling grooves are opened on the second metal copper-clad layer, and the plurality of coupling grooves correspond to a plurality of substrate integrated waveguide units respectively, and the center of each coupling groove There is a gap between the line and the center line of the corresponding substrate integrated waveguide unit, and each coupling slot feeds two sets of microstrip sub-arrays at the same time, and the two microstrip patch units in each group of microstrip sub-arrays and the microstrip The feeders are symmetrically distributed on both sides of the coupling slot.
进一步的是，还包括波导馈电网络，所述波导馈电网络通过设置在第三金属覆铜层上的第一馈电槽、第二馈电槽以及耦合调谐孔与基片集成波导馈电网络相互连接，耦合调谐孔设置在第一馈电槽与第二馈电槽之间。Further, it also includes a waveguide feeding network, the waveguide feeding network is integrated with the substrate through the first feeding slot, the second feeding slot and the coupling tuning hole arranged on the third metal copper clad layer. The networks are connected to each other, and the coupling tuning hole is arranged between the first feed slot and the second feed slot.
进一步的是，所述波导馈电网络由多个H面T型结组成，所述每个H面T型结包括波导管以及连接在波导管两端的法兰盘，所述法兰盘上设置有连接孔。Further, the waveguide feeding network is composed of a plurality of H-surface T-junctions, each of the H-surface T-junctions includes a waveguide and flanges connected to both ends of the waveguide, and the flanges are provided with There are connection holes.
进一步的是，所述第一馈电槽与第二馈电槽平行排列，其开槽方向垂直于基片集成波导单元的轴线。Further, the first feeding slot and the second feeding slot are arranged in parallel, and the slotting direction thereof is perpendicular to the axis of the substrate-integrated waveguide unit.
进一步的是，所述微带贴片单元的形状为矩形或圆形。Further, the shape of the microstrip patch unit is rectangular or circular.
进一步的是，所述微带馈线为阶梯弯折状。Further, the microstrip feeder is in a stepped bent shape.
进一步的是，所述耦合槽为矩形或椭圆形。Further, the coupling groove is rectangular or elliptical.
进一步的是，所述第一介质层与第二金属覆铜层之间设置有粘接层。Further, an adhesive layer is provided between the first dielectric layer and the second metal copper-clad layer.
本发明的有益效果：本发明所述的宽带平板阵列天线采用一个耦合槽来激励两个微带子阵，此时单根微带线的阻抗较高，易于辐射贴片进行高阻抗匹配，从而展宽微带子阵的带宽，实现宽频带，而且这种馈电方式的相对带宽（S11<–10dB）可以达到16%，1dB增益带宽可达14.6%，而普通结构的带宽只有6%左右；此外，采用“工”字形的基片集成波导馈电网络，所有微带子阵全部并联馈电，随着阵列单元的增加，带宽几乎不变，宽带特性能够在大阵中得以保持，而阵列天线的增益会逐渐提高；另外，馈电网络和微带子阵分层设计，馈电网络位于微带子阵的下方，不会增加额外电路面积，有利于阵列天线小型化。Beneficial effects of the present invention: the broadband panel array antenna described in the present invention uses a coupling slot to excite two microstrip sub-arrays. At this time, the impedance of a single microstrip line is relatively high, and it is easy to perform high-impedance matching on the radiation patch, thereby widening the The bandwidth of the microstrip subarray realizes wide frequency band, and the relative bandwidth (S11<–10dB) of this feeding method can reach 16%, and the 1dB gain bandwidth can reach 14.6%, while the bandwidth of the ordinary structure is only about 6%. In addition, The "I" shaped substrate integrated waveguide feeding network is used, and all microstrip sub-arrays are fed in parallel. With the increase of array elements, the bandwidth is almost unchanged, and the broadband characteristics can be maintained in a large array, while the gain of the array antenna In addition, the feed network and the microstrip sub-array are designed in layers, and the feed network is located under the micro-strip sub-array, which will not increase the additional circuit area, which is conducive to the miniaturization of the array antenna.
附图说明Description of drawings
图1是本发明宽带平板阵列天线的三维结构示意图；Fig. 1 is the three-dimensional structure schematic diagram of broadband panel array antenna of the present invention;
图2是本发明宽带平板阵列天线的基片集成波导对微带子阵的馈电结构图；Fig. 2 is the feeding structure diagram of the substrate integrated waveguide of the broadband panel array antenna of the present invention to the microstrip sub-array;
图3是本发明宽带平板阵列天线的基片集成波导馈电网络结构图；Fig. 3 is the structure diagram of the substrate integrated waveguide feeding network of the broadband panel array antenna of the present invention;
图4是本发明宽带平板阵列天线的波导馈电网络与基片集成波导馈电网络连接处的结构图；Fig. 4 is a structural diagram of the connection between the waveguide feed network and the substrate integrated waveguide feed network of the broadband panel array antenna of the present invention;
图5是本发明宽带平板阵列天线的波导馈电网络与基片集成波导馈电网络装配示意图；Fig. 5 is a schematic diagram of assembly of the waveguide feeding network and the substrate-integrated waveguide feeding network of the broadband panel array antenna of the present invention;
图中标记说明：第一金属覆铜层1、微带子阵11、微带贴片单元111、微带馈线112、第二金属覆铜层2、耦合槽21、第三金属覆铜层3、第一馈电槽31、第二馈电槽32、第一介质层4、粘接层5、第二介质层6、边壁孔711、短路孔712、功分调谐孔713、耦合调谐孔714、波导管81、法兰盘82、连接孔83。Explanation of marks in the figure: first metal copper clad layer 1, microstrip sub-array 11, microstrip patch unit 111, microstrip feeder 112, second metal copper clad layer 2, coupling groove 21, third metal copper clad layer 3, First feed slot 31, second feed slot 32, first dielectric layer 4, adhesive layer 5, second dielectric layer 6, side wall hole 711, short circuit hole 712, power division tuning hole 713, coupling tuning hole 714 , Waveguide 81, flange 82, connecting hole 83.
具体实施方式Detailed ways
下面结合附图对本发明的具体实施方式作进一步的说明。The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.
如图1至5所示，该宽带平板阵列天线，包括从上往下依次层叠设置的第一金属覆铜层1、第一介质层4、第二金属覆铜层2、第二介质层6、第三金属覆铜层3，所述第一金属覆铜层1上刻蚀有多组微带子阵11，所述每组微带子阵11由两个微带贴片单元111和连接两个微带贴片单元111的微带馈线112组成；第二介质层6上设置有“工”字形的基片集成波导馈电网络，所述基片集成波导馈电网络包括多个基片集成波导单元以及功分调谐孔713，所述基片集成波导单元由两排边壁孔711以及位于两排边壁孔711一端的短路孔712构成，所述边壁孔711、短路孔712、功分调谐孔713均贯穿第二金属覆铜层2、第二介质层6、第三金属覆铜层3，在第二金属覆铜层2上开有多个耦合槽21，所述多个耦合槽21分别与多个基片集成波导单元一一对应，每个耦合槽21的中心线与对应的基片集成波导单元的中心线之间存在间隙，所述每个耦合槽21同时对两组微带子阵11馈电，每组微带子阵11中的两个微带贴片单元111以及微带馈线112对称的分布在耦合槽21的两侧。本发明所述的宽带平板阵列天线采用一个耦合槽21来激励两个微带子阵11，此时单根微带线的阻抗较高，易于辐射贴片进行高阻抗匹配，从而展宽微带子阵11的带宽，实现宽频带，而且这种馈电方式的相对带宽S11<–10dB可以达到16%，1dB增益带宽可达14.6%，而普通结构的带宽只有6%左右；此外，采用“工”字形的基片集成波导馈电网络，所有微带子阵11全部并联馈电，随着阵列单元的增加，带宽几乎不变，宽带特性能够在大阵中得以保持，而阵列天线的增益会逐渐提高；另外，馈电网络和微带子阵11分层设计，馈电网络位于微带子阵11的下方，不会增加额外电路面积，有利于阵列天线小型化。As shown in Figures 1 to 5, the broadband panel array antenna includes a first metal copper-clad layer 1, a first dielectric layer 4, a second metal copper-clad layer 2, and a second dielectric layer 6 stacked in sequence from top to bottom. , the third metal copper-clad layer 3, etched on the first metal copper-clad layer 1 are multiple groups of microstrip sub-arrays 11, and each group of microstrip sub-arrays 11 is composed of two microstrip patch units 111 and two connected The microstrip patch unit 111 is composed of a microstrip feeder 112; the second dielectric layer 6 is provided with an "I"-shaped substrate integrated waveguide feeding network, and the substrate integrated waveguide feeding network includes a plurality of substrate integrated waveguides unit and power division tuning hole 713, the substrate integrated waveguide unit is composed of two rows of side wall holes 711 and a short circuit hole 712 located at one end of the two rows of side wall holes 711, the side wall holes 711, short circuit holes 712, power division The tuning holes 713 all pass through the second metal copper-clad layer 2, the second dielectric layer 6, and the third metal copper-clad layer 3, and a plurality of coupling grooves 21 are opened on the second metal copper-clad layer 2, and the plurality of coupling grooves 21 are in one-to-one correspondence with a plurality of substrate-integrated waveguide units, and there is a gap between the centerline of each coupling groove 21 and the centerline of the corresponding substrate-integrated waveguide unit. The strip sub-array 11 feeds power, and the two microstrip patch units 111 and the microstrip feeder 112 in each group of microstrip sub-arrays 11 are symmetrically distributed on both sides of the coupling slot 21 . The broadband panel array antenna of the present invention uses a coupling slot 21 to excite two microstrip sub-arrays 11. At this time, the impedance of a single microstrip line is relatively high, and it is easy to radiate the patch for high-impedance matching, thereby widening the microstrip sub-arrays 11. Wide bandwidth, and the relative bandwidth S11<–10dB of this feeding method can reach 16%, and the 1dB gain bandwidth can reach 14.6%, while the bandwidth of the ordinary structure is only about 6%; in addition, the "I" shape is adopted The substrate integrated waveguide feeding network, all the microstrip sub-arrays 11 are fed in parallel, with the increase of the array elements, the bandwidth is almost unchanged, the broadband characteristics can be maintained in the large array, and the gain of the array antenna will gradually increase; In addition, the feeding network and the microstrip sub-array 11 are designed in layers, and the feeding network is located under the microstrip sub-array 11, which does not increase the additional circuit area and is conducive to the miniaturization of the array antenna.
为了进一步减小馈线损耗，扩大阵列的有效面积，提高阵列天线的增益上限值，增加了波导馈电网络，所述波导馈电网络通过设置在第三金属覆铜层3上的第一馈电槽31、第二馈电槽32以及耦合调谐孔714与基片集成波导馈电网络相互连接。In order to further reduce the feeder loss, expand the effective area of the array, and increase the upper limit of the gain of the array antenna, a waveguide feeding network is added. The electrical slot 31 , the second feeding slot 32 and the coupling tuning hole 714 are connected to the substrate integrated waveguide feeding network.
所述波导馈电网络由多个H面T型结组成，所述每个H面T型结包括波导管81以及连接在波导管81两端的法兰盘82，所述法兰盘82上设置有连接孔83。为了连接方便，法兰盘82可以按照布阵需要作成非标准形式，波导管81也可以使用减高波导替代，只要保证主模传输条件即可。利用多个H面T型结可以实现32×32阵列、32×64阵列、64×64阵列等，为了减小装配的影响，需要采用介质螺栓和介质螺母，连接孔83的位置应该开在基片集成波导单元结构外，如子阵与子阵的间隙之处。The waveguide feeding network is composed of a plurality of H-surface T-junctions, and each H-surface T-junction includes a waveguide 81 and a flange 82 connected to both ends of the waveguide 81, and the flange 82 is provided with There are connection holes 83 . For the convenience of connection, the flange 82 can be made into a non-standard form according to the layout requirements, and the waveguide 81 can also be replaced by a reduced-height waveguide, as long as the main mode transmission conditions are guaranteed. A 32×32 array, a 32×64 array, a 64×64 array, etc. can be realized by using multiple H-face T-junctions. In order to reduce the influence of assembly, dielectric bolts and dielectric nuts are required. Outside the chip integrated waveguide unit structure, such as the gap between sub-arrays and sub-arrays.
为了保证波导馈电网络与基片集成波导馈电网络之间具有较好的连接特性，所述第一馈电槽31与第二馈电槽32平行排列，其开槽方向垂直于基片集成波导单元的轴线。In order to ensure better connection characteristics between the waveguide feeding network and the substrate-integrated waveguide feeding network, the first feeding slot 31 and the second feeding slot 32 are arranged in parallel, and the slotting direction is perpendicular to the substrate integration. Axis of the waveguide unit.
为了保证微带子阵11的辐射效果，所述微带贴片单元111的形状为矩形或圆形或类似形状，所述微带馈线112为阶梯弯折状或类似形状。In order to ensure the radiation effect of the microstrip sub-array 11, the shape of the microstrip patch unit 111 is a rectangle or a circle or similar shape, and the microstrip feeder 112 is a stepped bent shape or a similar shape.
进一步的是，所述耦合槽21为矩形或椭圆形。Further, the coupling groove 21 is rectangular or elliptical.
所述第一介质层4与第二金属覆铜层2之间设置有粘接层5，用于层间粘接。An adhesive layer 5 is provided between the first dielectric layer 4 and the second metal copper-clad layer 2 for interlayer bonding.
实施例1Example 1
本实施例中宽带平板阵列天线的阵列为4×4阵列，其中心频率为61.5GHz，对其在HFSS中进行电磁全波仿真。该宽带平板阵列天线，包括从上往下依次层叠设置的第一金属覆铜层1、第一介质层4、第二金属覆铜层2、第二介质层6、粘接层5、第三金属覆铜层3，所述第一金属覆铜层1上刻蚀有多组微带子阵11，所述每组微带子阵11由两个微带贴片单元111和连接两个微带贴片单元111的微带馈线112组成；第二介质层6上设置有“工”字形的基片集成波导馈电网络，所述基片集成波导馈电网络包括多个基片集成波导单元以及功分调谐孔713，所述基片集成波导单元由两排边壁孔711以及位于两排边壁孔711一端的短路孔712构成，所述边壁孔711、短路孔712、功分调谐孔713均贯穿第二金属覆铜层2、第二介质层6、第三金属覆铜层3，在第二金属覆铜层2上开有多个耦合槽21，所述多个耦合槽21分别与多个基片集成波导单元一一对应，每个耦合槽21的中心线与对应的基片集成波导单元的中心线之间存在间隙，所述每个耦合槽21同时对两组微带子阵11馈电，每组微带子阵11中的两个微带贴片单元111以及微带馈线112对称的分布在耦合槽21的两侧。选用的第一介质层4为TLY-5，介电常数为2.2，厚度0.254mm，损耗角正切为0.0009；选用的粘接层5为FR-28-0040-50，介电常数为2.81，厚度0.1mm，损耗角正切为0.0017；选用的第二层介质层为TLY-5，厚度0.508mm；第一金属覆铜层1、第二金属覆铜层2、第三金属覆铜层3的厚度均为0.035mm；选定微带贴片单元111为矩形微带贴片，尺寸为1.4mm×1.4mm，微带贴片单元111间距3.2mm；微带馈线112宽度为0.2mm和0.325mm，由同一耦合槽21馈电的两条馈微带线间距为0.6mm；基片集成波导单元的边壁孔711和短路孔712的直径为0.4mm，孔中心距为0.8mm，功分调谐孔713的直径为0.3mm；基片集成波导单元的宽度为2.4mm，耦合槽21的长度为1.9mm，宽度为0.3mm，耦合槽21偏离基片集成波导波导轴线0.48mm，耦合槽21的槽中心距离短路面1.4mm。仿真结果表明，从端口a馈电，4×4阵列在57GHz～66GHz的范围内，天线电压驻波比小于1.6，天线最大增益18.35dB，1dB带宽增益带宽可达14.6%。In this embodiment, the array of the broadband panel array antenna is a 4×4 array, and its center frequency is 61.5 GHz, and electromagnetic full-wave simulation is performed on it in HFSS. The broadband panel array antenna includes a first metal copper-clad layer 1, a first dielectric layer 4, a second metal copper-clad layer 2, a second dielectric layer 6, an adhesive layer 5, a third Metal copper-clad layer 3, etched on the first metal copper-clad layer 1 are multiple groups of microstrip sub-arrays 11, and each group of microstrip sub-arrays 11 is composed of two microstrip patch units 111 and two microstrip patch units connected to each other. The microstrip feeder 112 of the chip unit 111; the second dielectric layer 6 is provided with a "I"-shaped substrate integrated waveguide feeding network, and the substrate integrated waveguide feeding network includes a plurality of substrate integrated waveguide units and power The sub-tuning hole 713, the substrate integrated waveguide unit is composed of two rows of side wall holes 711 and a short circuit hole 712 located at one end of the two rows of side wall holes 711, the side wall holes 711, the short circuit hole 712, the power division tuning hole 713 all pass through the second metal copper clad layer 2, the second dielectric layer 6, and the third metal copper clad layer 3, and a plurality of coupling grooves 21 are opened on the second metal copper clad layer 2, and the plurality of coupling grooves 21 are respectively connected with Multiple substrate-integrated waveguide units are in one-to-one correspondence, and there is a gap between the centerline of each coupling groove 21 and the centerline of the corresponding substrate-integrated waveguide unit. For feeding, the two microstrip patch units 111 and the microstrip feeder 112 in each group of microstrip sub-arrays 11 are symmetrically distributed on both sides of the coupling slot 21 . The selected first dielectric layer 4 is TLY-5 with a dielectric constant of 2.2, a thickness of 0.254mm, and a loss tangent of 0.0009; the selected adhesive layer 5 is FR-28-0040-50 with a dielectric constant of 2.81 and a thickness of 0.1mm, the loss tangent is 0.0017; the second dielectric layer selected is TLY-5, with a thickness of 0.508mm; the thickness of the first metal copper clad layer 1, the second metal copper clad layer 2, and the third metal copper clad layer 3 Both are 0.035mm; the selected microstrip patch unit 111 is a rectangular microstrip patch with a size of 1.4mm×1.4mm, and the spacing between the microstrip patch units 111 is 3.2mm; the width of the microstrip feeder 112 is 0.2mm and 0.325mm, The distance between the two feeding microstrip lines fed by the same coupling slot 21 is 0.6 mm; the diameter of the side wall hole 711 and the short-circuit hole 712 of the substrate integrated waveguide unit is 0.4 mm, the hole center distance is 0.8 mm, and the power division tuning hole The diameter of 713 is 0.3mm; the width of the substrate integrated waveguide unit is 2.4mm, the length of the coupling groove 21 is 1.9mm, and the width is 0.3mm, the coupling groove 21 deviates from the axis of the substrate integrated waveguide waveguide by 0.48mm, the groove of the coupling groove 21 The distance between the center and the short-circuit surface is 1.4mm. The simulation results show that the antenna voltage standing wave ratio is less than 1.6, the maximum gain of the antenna is 18.35dB, and the 1dB bandwidth gain bandwidth can reach 14.6% in the range of 57GHz to 66GHz when the power is fed from port a.
实施例2Example 2
本实施例中宽带平板阵列天线的阵列为32×32阵列，其中心频率为61.5GHz，对其在HFSS中进行电磁全波仿真。该宽带平板阵列天线，包括从上往下依次层叠设置的第一金属覆铜层1、第一介质层4、第二金属覆铜层2、第二介质层6、粘接层5、第三金属覆铜层3，所述第一金属覆铜层1上刻蚀有多组微带子阵11，所述每组微带子阵11由两个微带贴片单元111和连接两个微带贴片单元111的微带馈线112组成；第二介质层6上设置有“工”字形的基片集成波导馈电网络，所述基片集成波导馈电网络包括多个基片集成波导单元以及功分调谐孔713，所述基片集成波导单元由两排边壁孔711以及位于两排边壁孔711一端的短路孔712构成，所述边壁孔711、短路孔712、功分调谐孔713均贯穿第二金属覆铜层2、第二介质层6、第三金属覆铜层3，在第二金属覆铜层2上开有多个耦合槽21，所述多个耦合槽21分别与多个基片集成波导单元一一对应，每个耦合槽21的中心线与对应的基片集成波导单元的中心线之间存在间隙，所述每个耦合槽21同时对两组微带子阵11馈电，每组微带子阵11中的两个微带贴片单元111以及微带馈线112对称的分布在耦合槽21的两侧，还包括波导馈电网络，所述波导馈电网络通过设置在第三金属覆铜层3上的第一馈电槽31、第二馈电槽32以及耦合调谐孔714与基片集成波导馈电网络相互连接，所述第一馈电槽31与第二馈电槽32平行排列，其开槽方向垂直于基片集成波导单元的轴线，所述波导馈电网络由多个H面T型结组成，所述每个H面T型结包括波导管81以及连接在波导管81两端的法兰盘82，所述法兰盘82上设置有连接孔83。选用的第一介质层4为TLY-5，介电常数为2.2，厚度0.254mm，损耗角正切为0.0009；选用的粘接层5为FR-28-0040-50，介电常数为2.81，厚度0.1mm，损耗角正切为0.0017；选用的第二层介质层为TLY-5，厚度0.508mm；第一金属覆铜层1、第二金属覆铜层2、第三金属覆铜层3的厚度均为0.035mm；选定辐射贴片为矩形微带贴片，尺寸为1.4mm×1.4mm，贴片单元间距3.2mm；微带馈线112宽度为0.2mm和0.325mm，由同一耦合槽21馈电的两条馈微带线间距为0.6mm；基片集成波导单元的边壁孔711和短路孔712的直径为0.4mm，孔中心距为0.8mm，功分调谐孔713和耦合调谐孔714直径为0.3mm；基片集成波导单元的宽度为2.4mm，耦合槽21的长度为1.9mm，宽度为0.3mm，耦合槽21偏离基片集成波导波导轴线0.48mm，耦合槽21的槽中心距离短路面1.4mm。第一馈电槽31和第二馈电槽32的长度均为2.8mm，宽度为0.2mm，第一馈电槽31和第二馈电槽32相距0.9mm，第一馈电槽31和第二馈电槽32之间加载两个耦合调谐孔714，两孔间距1.4mm，孔中心到短路孔712的距离为1.3mm。利用H面波导T型结将阵列扩充到32×32阵列，利用软件CST全波仿真，结果表明天线在57GHz～66GHz的范围内，天线电压驻波比小于2.5，天线增益大于33dBi，1dB增益带宽为11%。In this embodiment, the array of the broadband panel array antenna is a 32×32 array, and its center frequency is 61.5 GHz, and an electromagnetic full-wave simulation is performed on it in HFSS. The broadband panel array antenna includes a first metal copper-clad layer 1, a first dielectric layer 4, a second metal copper-clad layer 2, a second dielectric layer 6, an adhesive layer 5, a third Metal copper-clad layer 3, etched on the first metal copper-clad layer 1 are multiple groups of microstrip sub-arrays 11, and each group of microstrip sub-arrays 11 is composed of two microstrip patch units 111 and two microstrip patch units connected to each other. The microstrip feeder 112 of the chip unit 111; the second dielectric layer 6 is provided with a "I"-shaped substrate integrated waveguide feeding network, and the substrate integrated waveguide feeding network includes a plurality of substrate integrated waveguide units and power The sub-tuning hole 713, the substrate integrated waveguide unit is composed of two rows of side wall holes 711 and a short circuit hole 712 located at one end of the two rows of side wall holes 711, the side wall holes 711, the short circuit hole 712, the power division tuning hole 713 all pass through the second metal copper clad layer 2, the second dielectric layer 6, and the third metal copper clad layer 3, and a plurality of coupling grooves 21 are opened on the second metal copper clad layer 2, and the plurality of coupling grooves 21 are respectively connected with Multiple substrate-integrated waveguide units are in one-to-one correspondence, and there is a gap between the centerline of each coupling groove 21 and the centerline of the corresponding substrate-integrated waveguide unit. Feeding, the two microstrip patch units 111 and the microstrip feeder 112 in each group of microstrip sub-arrays 11 are symmetrically distributed on both sides of the coupling slot 21, and also include a waveguide feed network, which is configured by setting The first feeding slot 31, the second feeding slot 32 and the coupling tuning hole 714 on the third metal copper clad layer 3 are connected to the substrate integrated waveguide feeding network, and the first feeding slot 31 and the second The feeding slots 32 are arranged in parallel, and the slotting direction is perpendicular to the axis of the substrate-integrated waveguide unit. The waveguide feeding network is composed of a plurality of H-surface T-junctions, and each H-surface T-junction includes a waveguide 81 And the flanges 82 connected to both ends of the waveguide 81 , the flanges 82 are provided with connection holes 83 . The selected first dielectric layer 4 is TLY-5 with a dielectric constant of 2.2, a thickness of 0.254mm, and a loss tangent of 0.0009; the selected adhesive layer 5 is FR-28-0040-50 with a dielectric constant of 2.81 and a thickness of 0.1mm, the loss tangent is 0.0017; the second dielectric layer selected is TLY-5, with a thickness of 0.508mm; the thickness of the first metal copper clad layer 1, the second metal copper clad layer 2, and the third metal copper clad layer 3 Both are 0.035mm; the selected radiation patch is a rectangular microstrip patch, the size is 1.4mm×1.4mm, and the patch unit spacing is 3.2mm; The distance between the two feeding microstrip lines is 0.6 mm; the diameter of the side wall hole 711 and the short-circuit hole 712 of the substrate integrated waveguide unit is 0.4 mm, the center distance of the holes is 0.8 mm, the power division tuning hole 713 and the coupling tuning hole 714 The diameter is 0.3mm; the width of the substrate integrated waveguide unit is 2.4mm, the length of the coupling groove 21 is 1.9mm, and the width is 0.3mm, the coupling groove 21 deviates from the axis of the substrate integrated waveguide waveguide by 0.48mm, and the groove center distance The short-circuit surface is 1.4mm. The length of the first feed slot 31 and the second feed slot 32 is 2.8mm, the width is 0.2mm, the distance between the first feed slot 31 and the second feed slot 32 is 0.9mm, the first feed slot 31 and the second feed slot 32 Two coupling tuning holes 714 are placed between the two feeding slots 32 , the distance between the two holes is 1.4 mm, and the distance from the center of the holes to the short-circuit hole 712 is 1.3 mm. Use H-plane waveguide T-junction to expand the array to 32×32 array, use software CST full-wave simulation, the results show that the antenna is in the range of 57GHz-66GHz, the antenna VSWR is less than 2.5, the antenna gain is greater than 33dBi, and the gain bandwidth is 1dB 11%.
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