CN202633486U - Ridged half-mode substrate integrated waveguide transmission line for microwave circuit and millimeter wave circuit - Google Patents
Ridged half-mode substrate integrated waveguide transmission line for microwave circuit and millimeter wave circuit Download PDFInfo
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- CN202633486U CN202633486U CN 201220214197 CN201220214197U CN202633486U CN 202633486 U CN202633486 U CN 202633486U CN 201220214197 CN201220214197 CN 201220214197 CN 201220214197 U CN201220214197 U CN 201220214197U CN 202633486 U CN202633486 U CN 202633486U
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Abstract
The utility model provides a ridged half-mode substrate integrated waveguide transmission line for a microwave circuit and a millimeter wave circuit. The transmission line is formed by a medium substrate laminating layer, a top metal patch, a middle metal patch, a bottom metal patch and two rows of metal through holes. The width of the top metal patch and the middle metal patch is all smaller than that of the bottom metal patch, the first row of metal through holes are connected with the top metal patch and the bottom metal patch, the second row of meta through holes are connected with the top metal patch and the middle metal patch, and the two rows of metal through holes are arranged in parallel structures to form a wave guide transmission structure. The ridged half-mode substrate integrated waveguide transmission line for the microwave circuit and the millimeter wave circuit aims to improve use performance of half-mode substrate waveguide, reduces stopping frequency of a main mode (TE0.5) of the half-mode substrate waveguide by suitably selecting the width ratio of the top-layer metal patch and the middle-layer metal patch, and simultaneously maintains stopping frequency of adjacent higher modes (TE1.5) to be unchanged, so that the effects of expanding the relative band width of the main mode and reducing size of a circuit are achieved.
Description
Technical field
The utility model relates to a kind of waveguide transmission line, and especially a kind of microwave, millimetre-wave circuit are with adding ridge half module substrate integrated wave guide transmission line.
Background technology
The half module substrate integrated wave guide transmission line has the advantage of microstrip structure and waveguiding structure; Can be integrated on the active integrated circuit substrate easily; And its main mould frequency bandwidth of substrate integration wave-guide is bigger relatively, thereby obtained increasing concern at the design aspect of microwave and millimeter wave device, antenna and integral subsystem.
As shown in Figure 1; Existing half module substrate integrated wave guide transmission line is made up of dielectric substrate 1`, top metal paster 2`, bottom metal paster 3`, metal throuth hole 4`; Wherein, Top metal paster 2` is different with the width of bottom metal paster 3`, and bottom metal paster width needs greater than the top metal paster more than 50% usually.Reduction does not have effect to the half module substrate integrated wave guide transmission line to circuit size in side circuit, and its main mould TE0.5 relative bandwidth can not be greater than 1.Yet, in actual application,, also therefore reduced its serviceability because existing half module substrate integrated wave guide transmission line can't satisfy some specific demand in the circuit structure.
Summary of the invention
To the weak point of above-mentioned technology, it is a kind of through expanding microwave that main mould bandwidth improves half-module chip waveguide transmission line serviceability, millimetre-wave circuit with adding ridge half module substrate integrated wave guide transmission line that the utility model provides.
For realizing above-mentioned purpose; The utility model provides a kind of microwave, millimetre-wave circuit with adding ridge half module substrate integrated wave guide transmission line; Constitute by dielectric substrate superimposed layer, top metal paster and bottom metal paster; Also comprise middle part metal patch and two row metal through holes; Said middle part metal patch is arranged between said top metal paster and the said bottom metal paster; The width (b) of width of said top metal paster (a) and said middle part metal patch all is the width (c) less than said bottom metal paster, and the said first row metal through hole connects said top metal paster and said bottom metal paster, and the said second row metal through hole connects said top metal paster and said middle part metal patch.
Said bottom metal paster covers the bottom of said dielectric substrate superimposed layer, and a side end face of a side end face of said top metal paster and a side end face of said dielectric substrate superimposed layer and said bottom metal paster is same horizontal structure setting.
On the inwall of said first row metal through hole and the said second row metal through hole, be coated with metal level.
Said first row metal through hole and the said second row metal through hole are the parallel shape structure and are provided with to form the waveguide structure.
Said dielectric substrate superimposed layer constitutes by two dielectric substrates are superimposed, and said middle part metal patch is arranged between said two dielectric substrates.
Compared with prior art, the utlity model has following advantage:
The utility model project organization is reasonable, through suitable selection top-level metallic paster and middle level metal patch width ratio to reduce the main mould (TE of half-module chip waveguide
0.5) cut-off frequency, keep adjacent higher mode (TE simultaneously
1.5) cut-off frequency is constant basically, thereby reaching the effect of expanding main mould relative bandwidth, this technology also can be used for the reduction circuit size.
Description of drawings
Fig. 1 is the cutaway view of existing half module substrate integrated wave guide transmission line;
Fig. 2 is the vertical view of the utility model;
Fig. 3 is the cutaway view of Fig. 2;
Fig. 4 is the enlarged drawing of metal throuth hole among Fig. 3.
Main symbol description is following:
1`-dielectric substrate 2`-top metal paster 3`-bottom metal paster
The 4`-metal throuth hole
1-dielectric substrate superimposed layer 2-top medium substrate 3-bottom dielectric substrate
4-top metal paster 5-middle part metal patch 6-bottom metal paster
The 7-first row metal through hole 8-second row metal through hole 9-metal level
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is done further explain.
Extremely shown in Figure 4 like Fig. 2; The utility model provides a kind of microwave, millimetre-wave circuit with adding ridge half module substrate integrated wave guide transmission line, is made up of dielectric substrate superimposed layer 1, top metal paster 4, middle part metal patch 5, bottom metal paster 6, the first row metal through hole 7 and the second row metal through hole 8.Top metal paster 4 and bottom metal paster 5 are separately positioned on the top and bottom of dielectric substrate superimposed layer 1; Bottom metal paster 6 covers the lower surface of dielectric substrate superimposed layer 1, and a side end face of a side end face of top metal paster 4 and a side end face of dielectric substrate superimposed layer 1 and bottom metal paster 6 is same and is horizontally disposed with.Dielectric substrate superimposed layer 1 constitutes by top medium substrate 2 and bottom dielectric substrate 3 are superimposed, and the thickness of top medium substrate 2 is less than the thickness of bottom dielectric substrate 3, and middle part metal patch 5 is arranged between top medium substrate 2 and the bottom dielectric substrate 3.Wherein, the width (b) of width of top metal paster 4 (a) and middle part metal patch 5 all is the width (c) less than bottom metal paster 6.The first row metal through hole and the second row metal through hole are the parallel shape setting to form the waveguide structure.Wherein, the first row metal through hole 7 runs through the inside of dielectric substrate superimposed layer, to connect the inside that top metal paster 4 and bottom metal paster 6, the second row metal through holes 8 run through top medium substrate 2, to connect top metal paster 4 and middle part metal patch 5.In addition, on the inner wall surface of the first row metal through hole 7 and the second row metal through hole 8, also be coated with metal level 9.
The utility model is keeping the half module substrate integrated wave guide low-loss, is prone to make, on the basis of advantage easy of integration, adding ridge through single face and reduce transmission line master mould cut-off frequency.Also have following advantage:
1, select suitable add ridge height and width can with main mould cut-off frequency reduce half the below, and the higher mode cut-off frequency is constant basically simultaneously, thereby main mould relative bandwidth is brought up to more than 1.5;
2, under identical operating frequency condition, can half module substrate integrated wave guide transmission line width reduction is over half through adding ridge, thus reduce the entire circuit size greatly.
The above is merely the preferred embodiment of the utility model, and is in order to restriction the utility model, not all within the spirit and principle of the utility model, any modification of being done, is equal to replacement, improvement etc., all should be included within the protection range of the utility model.
Claims (5)
1. a microwave, millimetre-wave circuit are with adding ridge half module substrate integrated wave guide transmission line; Constitute by dielectric substrate superimposed layer, top metal paster and bottom metal paster; It is characterized in that; Also comprise middle part metal patch and two row metal through holes; Said middle part metal patch is arranged between said top metal paster and the said bottom metal paster; The width (b) of width of said top metal paster (a) and said middle part metal patch all is the width (c) less than said bottom metal paster, and the said first row metal through hole connects said top metal paster and said bottom metal paster, and the said second row metal through hole connects said top metal paster and said middle part metal patch.
2. a kind of microwave according to claim 1, millimetre-wave circuit are with adding ridge half module substrate integrated wave guide transmission line; It is characterized in that; Said bottom metal paster covers the bottom of said dielectric substrate superimposed layer, and a side end face of a side end face of said top metal paster and a side end face of said dielectric substrate superimposed layer and said bottom metal paster is same horizontal structure setting.
3. a kind of microwave according to claim 2, millimetre-wave circuit is characterized in that with adding ridge half module substrate integrated wave guide transmission line, on the inwall of said first row metal through hole and the said second row metal through hole, are coated with metal level.
4. a kind of microwave according to claim 3, millimetre-wave circuit is characterized in that with adding ridge half module substrate integrated wave guide transmission line said first row metal through hole and the said second row metal through hole are the parallel shape structure and are provided with to form the waveguide structure.
5. a kind of microwave according to claim 4, millimetre-wave circuit are with adding ridge half module substrate integrated wave guide transmission line; It is characterized in that; Said dielectric substrate superimposed layer constitutes by two dielectric substrates are superimposed, and said middle part metal patch is arranged between said two dielectric substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220214197 CN202633486U (en) | 2012-05-14 | 2012-05-14 | Ridged half-mode substrate integrated waveguide transmission line for microwave circuit and millimeter wave circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220214197 CN202633486U (en) | 2012-05-14 | 2012-05-14 | Ridged half-mode substrate integrated waveguide transmission line for microwave circuit and millimeter wave circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202633486U true CN202633486U (en) | 2012-12-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220214197 Expired - Fee Related CN202633486U (en) | 2012-05-14 | 2012-05-14 | Ridged half-mode substrate integrated waveguide transmission line for microwave circuit and millimeter wave circuit |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104363058A (en) * | 2014-10-22 | 2015-02-18 | 上海交通大学 | High-speed data transmission system based on half mode substrate integrated waveguide (HMSIW) interconnection |
| CN105226359A (en) * | 2014-07-09 | 2016-01-06 | 上海交通大学 | The coaxial substrate integration wave-guide interconnection structure in side |
| CN105633522A (en) * | 2015-12-29 | 2016-06-01 | 东南大学 | Jump layer transmission line based on artificial surface plasma polaritons |
| CN105742776A (en) * | 2016-04-01 | 2016-07-06 | 中国电子科技集团公司第三十八研究所 | Tile-shaped multi-power divider integrated with multiple microstrips |
| CN106299581A (en) * | 2016-08-09 | 2017-01-04 | 电子科技大学 | A kind of method for designing of ridge substrate integration wave-guide |
| CN112290180A (en) * | 2020-11-06 | 2021-01-29 | 上海交通大学 | Ridge half-mode substrate integrated waveguide transmission line |
| CN113764848A (en) * | 2021-09-17 | 2021-12-07 | 上海交通大学 | Substrate integrated waveguide transmission line with improved single-mode bandwidth |
-
2012
- 2012-05-14 CN CN 201220214197 patent/CN202633486U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226359A (en) * | 2014-07-09 | 2016-01-06 | 上海交通大学 | The coaxial substrate integration wave-guide interconnection structure in side |
| CN104363058A (en) * | 2014-10-22 | 2015-02-18 | 上海交通大学 | High-speed data transmission system based on half mode substrate integrated waveguide (HMSIW) interconnection |
| CN104363058B (en) * | 2014-10-22 | 2019-06-21 | 上海交通大学 | High speed data transmission system based on half module substrate integrated wave guide interconnection |
| CN105633522A (en) * | 2015-12-29 | 2016-06-01 | 东南大学 | Jump layer transmission line based on artificial surface plasma polaritons |
| CN105633522B (en) * | 2015-12-29 | 2018-08-21 | 东南大学 | Spring layer transmission line based on artificial surface plasmon |
| CN105742776A (en) * | 2016-04-01 | 2016-07-06 | 中国电子科技集团公司第三十八研究所 | Tile-shaped multi-power divider integrated with multiple microstrips |
| CN105742776B (en) * | 2016-04-01 | 2019-02-05 | 中国电子科技集团公司第三十八研究所 | Multi-disc micro-strip integrates the more power splitters of tile type |
| CN106299581A (en) * | 2016-08-09 | 2017-01-04 | 电子科技大学 | A kind of method for designing of ridge substrate integration wave-guide |
| CN106299581B (en) * | 2016-08-09 | 2018-12-18 | 电子科技大学 | A kind of design method of ridge substrate integration wave-guide |
| CN112290180A (en) * | 2020-11-06 | 2021-01-29 | 上海交通大学 | Ridge half-mode substrate integrated waveguide transmission line |
| CN113764848A (en) * | 2021-09-17 | 2021-12-07 | 上海交通大学 | Substrate integrated waveguide transmission line with improved single-mode bandwidth |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121226 Termination date: 20130514 |