CN113764848A - Substrate integrated waveguide transmission line with improved single-mode bandwidth - Google Patents
Substrate integrated waveguide transmission line with improved single-mode bandwidth Download PDFInfo
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- CN113764848A CN113764848A CN202111091223.XA CN202111091223A CN113764848A CN 113764848 A CN113764848 A CN 113764848A CN 202111091223 A CN202111091223 A CN 202111091223A CN 113764848 A CN113764848 A CN 113764848A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/18—Waveguides; Transmission lines of the waveguide type built-up from several layers to increase operating surface, i.e. alternately conductive and dielectric layers
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Abstract
The invention relates to a single-mode bandwidth-improved substrate integrated waveguide transmission line. The waveguide transmission line includes: the metal-clad plate comprises a first dielectric substrate, a first metal patch, a first metal via hole, a second metal patch, a second dielectric substrate and a third metal patch. The first dielectric substrate, the first metal patch, the first metal via hole, the second metal patch forms the metal ridge filled with different materials, the air via hole array is arranged in the first dielectric substrate, and then the transmission structure with the ridge half-mode substrate integrated waveguide and the air via hole array mixed is formed.
Description
Technical Field
The invention relates to the technical field of waveguide transmission devices, in particular to a substrate integrated waveguide transmission line with improved single-mode bandwidth.
Background
Substrate Integrated Waveguides (SIW) have the advantages of good shielding, low cost, high quality factor, high power capacity, and easy integration, and have become an important choice for microwave and millimeter wave circuit devices and high-speed electrical interconnection systems. Compared with transmission lines such as microstrip lines and coplanar waveguides, the substrate integrated waveguide technology has the main disadvantages of large lateral dimension and limited single-mode transmission bandwidth (SMB).
In order to reduce the lateral size of the substrate integrated waveguide and increase the single-mode transmission bandwidth thereof, related researches respectively propose various substrate integrated waveguide structures such as a substrate integrated folded waveguide, a ridge substrate integrated waveguide and a half-mode substrate integrated waveguide. For the substrate integrated folded waveguide transmission line, the transverse dimension of the waveguide structure can be reduced by 50% without affecting the field distribution significantly by folding the upper metal surface. Due to the main mode (f) of the waveguide1) And the first higher order mode (f)2) The cut-off frequency of (a) is changed at the same time, so that the single-mode transmission bandwidth remains unchanged compared to conventional substrate-integrated waveguides. For a ridge-based integrated waveguide transmission line, the metal ridge located in the middle of the broad side of the waveguide can be made less significant f2In the case of (2) decrease f1Therefore, the miniaturization of the transverse width of the waveguide and the improvement of the single-mode transmission bandwidth are realized. In addition, half of the substrate integrated waveguide can be obtained by removing half of the substrate integrated waveguide along the central symmetry line of the substrate integrated waveguide, and the transverse width of the waveguide can be reduced by 50%. Another method for increasing the single-mode transmission bandwidth of a substrate-integrated waveguide is to increase the cutoff frequency (f) of the first higher-order mode by decreasing the effective dielectric constant of the first higher-order mode distribution region of the waveguide2) But there is limited reduction in the lateral dimensions of the waveguide.
In order to solve the technical problem, the prior art needs to provide a ridge half-mode substrate integrated waveguide transmission line filled with two materials, so as to significantly improve the single-mode transmission bandwidth while reducing the lateral dimension.
Disclosure of Invention
The invention aims to provide a single-mode bandwidth-improved substrate integrated waveguide transmission line, which can obviously improve the single-mode transmission bandwidth while reducing the transverse size of a waveguide.
In order to achieve the purpose, the invention provides the following scheme:
a single-mode bandwidth-boosted substrate-integrated waveguide transmission line, comprising: the metal-clad plate comprises a first dielectric substrate, a first metal patch, a first metal via hole, a second metal patch, a second dielectric substrate and a third metal patch;
the second dielectric substrate is arranged on the third metal patch; the second metal patch is arranged on the second dielectric substrate; the first dielectric substrate is arranged on the second metal patch; the first metal patch is arranged on the first medium substrate; the first metal via hole penetrates through the first dielectric substrate and the second dielectric substrate and is connected with the first metal patch and the third metal patch respectively; the second metal via hole penetrates through the first dielectric substrate and is respectively connected with the first metal patch and the second metal patch; an air via array is arranged in the first dielectric substrate.
Preferably, the dielectric constant of the first dielectric substrate is different from the dielectric constant of the second dielectric substrate.
Preferably, the dielectric constant of the first dielectric substrate is smaller than that of the second dielectric substrate.
Preferably, the dielectric constant of the first dielectric substrate is greater than the dielectric constant of the second dielectric substrate.
Preferably, the width of the first metal patch and the width of the third metal patch are equal.
Preferably, the width of the second metal patch is smaller than the width of the first metal patch and the width of the third metal patch.
Preferably, the width of the first metal patch is greater than the width of the third metal patch.
Preferably, the width of the first metal patch is smaller than the width of the third metal patch.
Preferably, the arrangement periods of the air vias in each column of the air via array are the same.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the present invention provides a waveguide transmission line comprising: the metal-clad plate comprises a first dielectric substrate, a first metal patch, a first metal via hole, a second metal patch, a second dielectric substrate and a third metal patch. The first dielectric substrate, the first metal patch, the first metal via hole, the second metal via hole and the second metal patch form a transmission structure with a ridge half-mode substrate integrated waveguide and an air via hole array filled with different materials, and the single-mode transmission bandwidth can be remarkably improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic structural diagram of a single-mode bandwidth-enhanced substrate integrated waveguide transmission line according to the present invention;
FIG. 2 is a schematic cross-sectional view of a single-mode bandwidth-enhanced substrate integrated waveguide transmission line provided in accordance with the present invention;
FIG. 3 is a diagram illustrating the effect of different metal ridge heights on the cutoff frequencies of the main mode and the higher mode according to an embodiment of the present invention;
fig. 4 is a diagram illustrating the effect of filling substrates with different dielectric constants on the cutoff frequencies of the main mode and the higher-order mode according to an embodiment of the present invention.
Fig. 5 is a diagram illustrating a result of the effect of loading different numbers of air vias on cutoff frequencies of a main mode and a higher order mode according to an embodiment of the present invention.
Fig. 6 is a diagram illustrating the effect of changing the radius of the air via on the cutoff frequencies of the main mode and the higher-order mode according to an embodiment of the present invention.
Fig. 7 is a diagram of simulation and test results of S parameters of a waveguide transmission line according to an embodiment of the present invention.
Description of the symbols:
1-a first dielectric substrate, 2-a first metal patch, 3-a first metal via hole, 4-an air via hole array, 5-a second metal patch, 6-a second dielectric substrate, 7-a third metal patch, and 8-a second metal via hole.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a single-mode bandwidth-improved substrate integrated waveguide transmission line, which can obviously improve the single-mode transmission bandwidth.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
As shown in fig. 1 and 2, the present invention provides a waveguide transmission line including: the metal-clad plate comprises a first dielectric substrate 1, a first metal patch 2, a first metal via hole 3, a second metal via hole 8, a second metal patch 5, a second dielectric substrate 6 and a third metal patch 7.
The second dielectric substrate 6 is disposed on the third metal patch 7. The second metal patch 5 is disposed on the second dielectric substrate 6. The first dielectric substrate 1 is disposed on the second metal patch 5. The first metal patch 2 is disposed on the first dielectric substrate 1. The first metal via hole 3 penetrates through the first dielectric substrate 1 and the second dielectric substrate 6 and then is connected with the first metal patch 2 and the third metal patch 7 respectively. The second metal via hole 8 is connected with the first metal patch 2 and the second metal patch 5 respectively after penetrating through the first dielectric substrate 1. An air via array 4 is disposed in the first dielectric substrate 1.
The first dielectric substrate 1, the first metal patch 2, the first metal via hole 3, the second metal via hole 8, the second metal patch 5, the second dielectric substrate 6 and the third metal patch 7 form a ridge half-mode substrate integrated waveguide, and are mixed with an air via hole array to form a transmission structure. Wherein, the diameter of the first metal via 3 and the diameter of the second metal via 8 are both d.
Further, in order to obtain a wider single-mode transmission bandwidth, the dielectric constant ε of the first dielectric substrate1And the dielectric constant ε of the second dielectric substrate2Different from epsilon2/ε1The smaller the bandwidth of single mode transmission achieved.
In order to significantly reduce the lateral dimension, the relationship between the width of the first metal patch 2 and the width of the third metal patch 7 is not required, and in the preparation process, it is only necessary to ensure that the width of the second metal patch 5 is smaller than the width of the first metal patch 2 and the width of the third metal patch 5. Wherein the width of the first metal patch 2 is w, and the width of the second metal patch 5 is wsThe width of the third metal patch 7 is wg。
And, by adjusting the height h of the metal ridge2(i.e., the height of the first dielectric substrate 1 as shown in FIG. 2) can be reduced in size, and the dielectric constants ε of the first and second dielectric substrates can be adjusted1And ε2The size of the arrangement period p of the periodic air via array 4 can realize the improvement of the ridge half-mode substrate integrated waveguide single-mode transmission bandwidth.
Further, the thickness (h) of the first and second dielectric substrates1And h2) Different, h2/(h1+h2) The smaller the capacitance introduced, the larger the lateral size reduction achieved with a constant operating cutoff frequency.
Further, according to the actual application requirement, the single-mode bandwidth can be further improved by adjusting the radius r of the air via hole in the air via hole array 4. Wherein, the distance between two air via holes is p, the unit is mm, the diameter of the air via hole is da。
The significant properties provided by the invention above are illustrated below using specific examples.
Example 1
The first dielectric substrate 1 is made of Taconic TLY material, and has a dielectric constant of 2.2 and a dielectric loss tangent of 0.001. The second dielectric substrate 6 adopts Taconic CER-10 material with dielectric constant of 10.0 and dielectricThe loss tangent was 0.0035. The width w of the first metal patch 2 is 8mm, and the width w of the second metal patch 5 iss1.2 mm. Width w of the third metal patch 7g6.5mm, thickness h of the first dielectric substrate 110.5mm, thickness h of the second dielectric substrate 621.5mm, diameter d of air via holea0.8mm, and the air via period p is 0.8 mm. Thickness ratio h of different dielectric substrates2/h1The effect of the variation on the cutoff frequencies of the primary mode (mode 1) and the higher order mode (mode 2) is shown in fig. 3, and the effect of the variation in the dielectric constant of the underlying substrate on the cutoff frequencies of the primary mode (mode 1) and the higher order mode (mode 2) is shown in fig. 4. The influence of the change in dielectric constant of the upper substrate on the cutoff frequencies of the primary mode (mode 1) and the higher mode (mode 2) is shown in fig. 5. The effect of loading the air via array on the cutoff frequencies of the main and higher modes is shown in fig. 6, where the horizontal axis in fig. 3-6 is frequency (GHz) and the vertical axis is the propagation constant (rad/m). The S-parameters of the simulation and test are shown in fig. 7. In fig. 7, the horizontal axis represents frequency (GHz) and the vertical axis represents decibel (dB).
Example 2
In this embodiment 2, the width w of the third metal patch 7 is set to 8mm except that the width w of the first metal patch 2 is set to 8mmgThe setting parameters of the other parts were the same as in example 1 except for the setting of 8 mm.
Example 3
In this embodiment 2, the width w of the third metal patch 7 is set to 9.5mm except that the width w of the first metal patch 2 is set to 9.5mmgThe setting parameters of the other parts were the same as in example 1 except for the setting of 8 mm.
In conclusion, the invention adopts the ridge half-mode substrate integrated waveguide transmission structure filled with two layers of dielectric substrates with different dielectric constants and loaded with the air through hole array, and introduces the coupling capacitor by using the metal ridge, thereby realizing the reduction of the transverse dimension of the waveguide under the condition of unchanged working cut-off frequency. And two layers of dielectric substrates with different dielectric constants are filled and an air through hole array is loaded, so that the single-mode transmission bandwidth is remarkably improved. While ridge-half substrate integrated waveguides increase processing complexity, lateral dimensions are reduced and a significant increase in single-mode transmission bandwidth is achieved. Compared with the traditional substrate integrated waveguide, the ridge half-mode substrate integrated waveguide transmission line with the improved single-mode transmission bandwidth has the advantages of small volume, high compactness, simple design, wide single-mode transmission bandwidth and the like. The transmission line can be improved to realize the design of broadband devices. The method has important prospect in future microwave and terahertz waveband integrated circuits, communication systems and radar systems.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (9)
1. A single-mode bandwidth-enhanced substrate-integrated waveguide transmission line, comprising: the metal-clad plate comprises a first dielectric substrate, a first metal patch, a first metal via hole, a second metal patch, a second dielectric substrate and a third metal patch;
the second dielectric substrate is arranged on the third metal patch; the second metal patch is arranged on the second dielectric substrate; the first dielectric substrate is arranged on the second metal patch; the first metal patch is arranged on the first medium substrate; the first metal via hole penetrates through the first dielectric substrate and the second dielectric substrate and is connected with the first metal patch and the third metal patch respectively; the second metal via hole penetrates through the first dielectric substrate and is respectively connected with the first metal patch and the second metal patch; an air via array is arranged in the first dielectric substrate.
2. The single mode bandwidth enhanced chip integrated waveguide transmission line of claim 1, wherein the dielectric constant of said first dielectric substrate is different from the dielectric constant of said second dielectric substrate.
3. The single-mode bandwidth-boosted, substrate-integrated waveguide transmission line of claim 1, wherein the dielectric constant of the first dielectric substrate is less than the dielectric constant of the second dielectric substrate.
4. The single-mode bandwidth-boosted, substrate-integrated waveguide transmission line of claim 1, wherein the dielectric constant of the first dielectric substrate is greater than the dielectric constant of the second dielectric substrate.
5. The single mode bandwidth boosted substrate-integrated waveguide transmission line of claim 1, wherein the width of the first metal patch and the width of the third metal patch are equal.
6. The single-mode bandwidth-boosted substrate-integrated waveguide transmission line of claim 1, wherein the width of the second metal patch is less than the width of the first metal patch and the width of the second metal patch.
7. The single-mode bandwidth-boosted, substrate-integrated waveguide transmission line of claim 1, wherein the width of the first metal patch is greater than the width of the third metal patch.
8. The single-mode bandwidth-boosted substrate-integrated waveguide transmission line of claim 1, wherein the width of the first metal patch is less than the width of the third metal patch.
9. The single-mode bandwidth-boosted substrate-integrated waveguide transmission line according to claim 1, wherein the arrangement period of each column of air vias in the air via array is the same.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114171867A (en) * | 2021-12-24 | 2022-03-11 | 上海交通大学 | Compact half-mode substrate integrated waveguide balance filter |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202633486U (en) * | 2012-05-14 | 2012-12-26 | 鲍峻松 | Ridged half-mode substrate integrated waveguide transmission line for microwave circuit and millimeter wave circuit |
| CN109167137A (en) * | 2018-09-05 | 2019-01-08 | 上海理工大学 | A kind of novel substrate integrated ridge waveguide structure |
| CN112290180A (en) * | 2020-11-06 | 2021-01-29 | 上海交通大学 | Ridge half-mode substrate integrated waveguide transmission line |
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- 2021-09-17 CN CN202111091223.XA patent/CN113764848A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202633486U (en) * | 2012-05-14 | 2012-12-26 | 鲍峻松 | Ridged half-mode substrate integrated waveguide transmission line for microwave circuit and millimeter wave circuit |
| CN109167137A (en) * | 2018-09-05 | 2019-01-08 | 上海理工大学 | A kind of novel substrate integrated ridge waveguide structure |
| CN112290180A (en) * | 2020-11-06 | 2021-01-29 | 上海交通大学 | Ridge half-mode substrate integrated waveguide transmission line |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114171867A (en) * | 2021-12-24 | 2022-03-11 | 上海交通大学 | Compact half-mode substrate integrated waveguide balance filter |
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