CN102904011B - Balance microstrip line transition full-mode dual-ridged integrated waveguide feed dipole printed antenna - Google Patents

Balance microstrip line transition full-mode dual-ridged integrated waveguide feed dipole printed antenna Download PDF

Info

Publication number
CN102904011B
CN102904011B CN201210424564.9A CN201210424564A CN102904011B CN 102904011 B CN102904011 B CN 102904011B CN 201210424564 A CN201210424564 A CN 201210424564A CN 102904011 B CN102904011 B CN 102904011B
Authority
CN
China
Prior art keywords
dielectric substrate
middle level
metal patch
metal
under
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210424564.9A
Other languages
Chinese (zh)
Other versions
CN102904011A (en
Inventor
林澍
田雨
陆加
刘梦芊
荆丽雯
刘曦
马欣茹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harbin Institute of Technology
Original Assignee
Harbin Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harbin Institute of Technology filed Critical Harbin Institute of Technology
Priority to CN201210424564.9A priority Critical patent/CN102904011B/en
Publication of CN102904011A publication Critical patent/CN102904011A/en
Application granted granted Critical
Publication of CN102904011B publication Critical patent/CN102904011B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The invention provides a balance microstrip line transition full-mode dual-ridged integrated waveguide feed dipole printed antenna which relates to a dipole printed antenna, and particularly to a balance microstrip line transition full-mode dual-ridged integrated waveguide feed dipole printed antenna. The invention solves the problems that the traditional balance microstrip line feed antenna can not be beneficial to application to an occasion needing longer feed distance due to larger radiation loss and a substrate integrated waveguide single-mode working bandwidth is narrower. A left oscillator and a right oscillator are symmetrically printed on the upper surface of the other end of an intermediate medium substrate along a center line of the intermediate medium substrate, the straight side of the left oscillator and the straight side of the right oscillator are respectively in parallel to the center line of the intermediate medium substrate and are far away from the center line, the arc-shaped side of the left oscillator is connected with a short balance microstrip line on the upper surface of the intermediate medium substrate, a load wafer is connected with the arc-shaped side of the left oscillator, and the middle of the arc-shaped side of the right oscillator is provided with a fourth metalized through hole. The invention is used in the field of radio.

Description

The two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition
Technical field
The present invention relates to symmetrical dipole printed antenna, be specifically related to the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition.
Background technology
Ultra-wideband antenna has very wide frequency band, in wireless transmissions can high-speed transfer information, thus extensive concern is received, the current definition about ultra broadband has a lot, the frequency range of the civilian ultra broadband that FCC (FCC) specifies is 3.1GHz-10.6GHz, it reaches 3.42:1 than bandwidth, usually the definition for ultra-wideband antenna is then at more than 2:1 than broadband, for the research of ultra-wideband antenna, researcher proposes kinds of schemes: one, the monopole of various abnormal shape, this kind of antenna can obtain omnidirectional radiation, if by its compact in size, then time-domain antenna can be become, two, the plane ultra-wideband directional antenna adopting little reflection theory to obtain, this kind of antenna is with Vivaldi antenna for representative, and majority has the border of gradual change, and their sizes are comparatively large, can realize the ultra broadband of frequency domain, three, the antenna that have employed the Technology design of frequency independent antenna realizes ultra broadband, comprises equiangular spiral antenna and logarithm periodic antenna etc.
Above-mentioned antenna design does not all comprise the symmetrical dipole of ultra broadband, because the balanced feeding of ultra broadband symmetrical dipole is difficult to realize, and have employed balance microstrip line and carry out feed, the bandwidth of operation of ultra-wide can be obtained, but balance microstrip line is a kind of open transmission line, can produce larger radiation loss, be unfavorable for the occasion being applied in the longer feed distance of needs such as group battle array, therefore, also need to solve the balanced feeding problem closed.
Summary of the invention
The present invention is that the antenna solving existing balance microstrip line feed can produce larger radiation loss, be unfavorable for being applied in the occasion of the longer feed distance of needs and the narrower problem of substrate integrated waveguide single mould bandwidth of operation, and then propose the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition.
The present invention is the technical scheme taked that solves the problem: the present invention includes semicircular dipole assembly, load disk, top dielectric substrate, middle level dielectric substrate, layer dielectric substrate, metal patch on top dielectric substrate, metal patch under top dielectric substrate, metal patch on layer dielectric substrate, metal patch under layer dielectric substrate, metal patch on the dielectric substrate of middle level, metal patch under the dielectric substrate of middle level, metal transfer sheet, metal strap under two top dielectric substrates, two middle level dielectric substrate metal strip on gas, metal strap under two middle level dielectric substrates, two layer dielectric substrate metal strip on gas, two long balance microstrip line and two short balance microstrip line, semicircular dipole assembly comprises left side oscillator and right side oscillator, on top dielectric substrate, metal patch is arranged on the upper surface of top dielectric substrate, under top dielectric substrate, metal patch is arranged on the middle part of top dielectric substrate lower surface, top dielectric substrate lower surface along its length both sides of the edge is respectively provided with metal strap under a top dielectric substrate respectively, on layer dielectric substrate, metal patch is arranged on the middle part of layer dielectric substrate upper surface, layer dielectric substrate upper surface along its length both sides of the edge is respectively provided with a layer dielectric substrate metal strip on gas respectively, the lower surface of layer dielectric substrate is provided with metal patch under layer dielectric substrate, the middle part of middle level dielectric substrate upper surface is provided with metal patch on the dielectric substrate of middle level, the middle part of middle level dielectric substrate lower surface is provided with metal patch under the dielectric substrate of middle level, dielectric substrate upper surface both sides of the edge along its length in middle level are respectively provided with a middle level dielectric substrate metal strip on gas respectively, dielectric substrate lower surface both sides of the edge along its length in middle level are respectively provided with metal strap under a middle level dielectric substrate respectively, top dielectric substrate, middle level dielectric substrate, layer dielectric substrate superposes setting from top to bottom successively, and metal patch contacts with metal patch on the dielectric substrate of middle level under top dielectric substrate, on layer dielectric substrate, metal patch contacts with metal patch under the dielectric substrate of middle level, under each top dielectric substrate, metal strap contacts with corresponding middle level dielectric substrate metal strip on gas, each layer dielectric substrate metal strip on gas contacts with metal strap under corresponding middle level dielectric substrate, on top dielectric substrate, metal patch upper surface both sides of the edge along its length are respectively provided with one respectively and ranked first metallization via hole, each first metallization via hole is from top to bottom successively through metal patch on top dielectric substrate, top dielectric substrate, metal strap under top dielectric substrate, middle level dielectric substrate metal strip on gas, middle level dielectric substrate, metal strap under the dielectric substrate of middle level, layer dielectric substrate metal strip on gas, metal patch under layer dielectric substrate and layer dielectric substrate, on top dielectric substrate, on metal patch upper surface middle part and layer dielectric substrate, metal patch upper surface middle part is respectively provided with two along its length respectively and ranked second metallization via hole, on top dielectric substrate, on metal patch upper surface middle part and layer dielectric substrate, metal patch upper surface middle part broad ways is respectively provided with two respectively and ranked third metallization via hole, on top dielectric substrate two of metal patch ranked second metallization via hole and two ranked third metallization via hole formed rectangular box, on layer dielectric substrate two of metal patch ranked second metallization via hole and two ranked third metallization via hole formed rectangular box, on top dielectric substrate, each second metallization via hole and each 3rd of metal patch upper surface metallizes via hole from top to bottom respectively successively through metal patch on top dielectric substrate, top dielectric substrate, metal patch under top dielectric substrate, on layer dielectric substrate, each second metallization via hole and each 3rd of metal patch upper surface metallizes via hole from top to bottom respectively successively through metal patch on layer dielectric substrate, layer dielectric substrate, metal patch under layer dielectric substrate, on the dielectric substrate of middle level, one end of metal patch is connected with a long balance microstrip line, on the dielectric substrate of middle level, the other end of metal patch is connected with a short balance microstrip line, under the dielectric substrate of middle level, one end of metal patch is connected with a long balance microstrip line, under the dielectric substrate of middle level, the other end of metal patch is connected with a short balance microstrip line, left side oscillator and right side oscillator are printed on the upper surface of the middle level dielectric substrate other end along the center line of middle level dielectric substrate is symmetrical, the left side straight flange of oscillator and the middle line parallel of middle level dielectric substrate away from center line, the right side straight flange of oscillator and the middle line parallel of middle level dielectric substrate away from center line, the arc-shaped edges of left side oscillator is connected with the short balance microstrip line being positioned at middle level dielectric substrate upper surface, load disk to be connected with the arc-shaped edges of left side oscillator, the middle part of right side oscillator arc-shaped edges is provided with the 4th metallization via hole, 4th metallization via hole is from top to bottom successively through right side oscillator, middle level dielectric substrate and the metal transfer sheet be positioned on the dielectric substrate lower surface of middle level, metal transfer sheet is printed on the lower surface of the middle level dielectric substrate other end, and metal transfer sheet is connected with the short balance microstrip line be positioned on the dielectric substrate lower surface of middle level.
The invention has the beneficial effects as follows: the present invention is planographic type antenna, and size is little, compact conformation, accessible site, on the circuit board of mobile terminal, greatly achieves the miniaturization of antenna.
1, antenna radiator part: antenna radiator proposed by the invention is symmetrical dipole structure, and directional diagram has symmetry.
2, waveguides sections: the balance microstrip line one, introducing the sectional area gradual change of its transitional function, this balance microstrip line belongs to undersized TEM ripple transmission line, the port sizes of this transmission line is very little, the cut-off frequency of the higher mode of whole transmission line system can be improved, can the higher mode of effectively filtering low-frequency range; Two, double ridged waveguide is compared rectangular waveguide and is had the longer feature of the cut-off wavelength of main mould field, when identical operation wavelength, waveguide dimensions can reduce, main mould and other higher mode cut-off wavelengths are relatively far apart, therefore, single mode operation frequency band is wider, and equiva lent impedance is lower, can mate with low-impedance coaxial line or microstrip line; Three, machine emulation draws as calculated, and the multimode propagation coefficient without the simple medium integrated waveguide of transition result is lower, and the frequency range of single mode transport also significantly reduces, and is only 2.16-4.80GHz, and absolute bandwidth is only has 40% of transition structure; Four, the structure of double ridged waveguide part of the present invention is planographic waveguide, and adopt circuitron explained hereafter, can be integrated in large-scale circuit as a part for printed circuit and go, size is little, is easy to integrated, can large-scale production, and difficulty of processing is low; Five, due to the effect of ridge waveguide, there is directional characteristic in low-frequency range in antenna.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present invention, Fig. 2 is front view of the present invention, Fig. 3 is the vertical view of Fig. 2, Fig. 4 is the upward view of Fig. 2, Fig. 5 is the vertical view of top dielectric substrate, Fig. 6 is the upward view of Fig. 5, Fig. 7 is the vertical view of middle level dielectric substrate, Fig. 8 is the upward view of Fig. 7, Fig. 9 is the vertical view of layer dielectric substrate, Figure 10 is the upward view of Fig. 9, Figure 11 is the reflection coefficient experimental result curve chart of inventive antenna, E face of the present invention directional diagram when Figure 12 is 4GHz, E face of the present invention directional diagram when Figure 13 is 6GHz, H face of the present invention directional diagram when Figure 14 is 4GHz, H face of the present invention directional diagram when Figure 15 is 6GHz.
Embodiment
Embodiment one: composition graphs 1 to Figure 10 illustrates present embodiment, the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition described in present embodiment comprises semicircular dipole assembly, load disk 3, top dielectric substrate 4, middle level dielectric substrate 5, layer dielectric substrate 6, metal patch 7 on top dielectric substrate, metal patch 8 under top dielectric substrate, metal patch 9 on layer dielectric substrate, metal patch 10 under layer dielectric substrate, metal patch 11 on the dielectric substrate of middle level, metal patch 12 under the dielectric substrate of middle level, metal transfer sheet 23, metal strap 13 under two top dielectric substrates, two middle level dielectric substrate metal strip on gas 14, metal strap 15 under two middle level dielectric substrates, two layer dielectric substrate metal strip on gas 16, two long balance microstrip line 17 and two short balance microstrip line 18, semicircular dipole assembly comprises left side oscillator 1 and right side oscillator 2, on top dielectric substrate, metal patch 7 is arranged on the upper surface of top dielectric substrate 4, under top dielectric substrate, metal patch 8 is arranged on the middle part of top dielectric substrate 4 lower surface, top dielectric substrate 4 lower surface along its length both sides of the edge is respectively provided with metal strap 13 under a top dielectric substrate respectively, on layer dielectric substrate, metal patch 9 is arranged on the middle part of layer dielectric substrate 6 upper surface, layer dielectric substrate 6 upper surface along its length both sides of the edge is respectively provided with a layer dielectric substrate metal strip on gas 16 respectively, the lower surface of layer dielectric substrate 6 is provided with metal patch 10 under layer dielectric substrate, the middle part of middle level dielectric substrate 5 upper surface is provided with metal patch 11 on the dielectric substrate of middle level, the middle part of middle level dielectric substrate 5 lower surface is provided with metal patch 12 under the dielectric substrate of middle level, middle level dielectric substrate 5 upper surface both sides of the edge along its length are respectively provided with a middle level dielectric substrate metal strip on gas 14 respectively, middle level dielectric substrate 5 lower surface both sides of the edge along its length are respectively provided with metal strap 15 under a middle level dielectric substrate respectively, top dielectric substrate 4, middle level dielectric substrate 5, layer dielectric substrate 6 superposes setting from top to bottom successively, and metal patch 8 contacts with metal patch 11 on the dielectric substrate of middle level under top dielectric substrate, on layer dielectric substrate, metal patch 9 contacts with metal patch 12 under the dielectric substrate of middle level, under each top dielectric substrate, metal strap 13 contacts with corresponding middle level dielectric substrate metal strip on gas 14, each layer dielectric substrate metal strip on gas 16 contacts with metal strap 15 under corresponding middle level dielectric substrate, on top dielectric substrate, metal patch 7 upper surface both sides of the edge along its length are respectively provided with one respectively and ranked first metallization via hole 19, each first metallization via hole 19 is from top to bottom successively through metal patch 7 on top dielectric substrate, top dielectric substrate 4, metal strap 13 under top dielectric substrate, middle level dielectric substrate metal strip on gas 14, middle level dielectric substrate 5, metal strap 15 under the dielectric substrate of middle level, layer dielectric substrate metal strip on gas 16, metal patch 10 under layer dielectric substrate 6 and layer dielectric substrate, on top dielectric substrate, on metal patch 7 upper surface middle part and layer dielectric substrate, metal patch 9 upper surface middle part is respectively provided with two along its length respectively and ranked second metallization via hole 20, on top dielectric substrate, on metal patch 7 upper surface middle part and layer dielectric substrate, metal patch 9 upper surface middle part broad ways is respectively provided with two respectively and ranked third metallization via hole 21, on top dielectric substrate, two of metal patch 7 ranked second metallization via hole 20 and two and ranked third metallization via hole 21 and form rectangular box, on layer dielectric substrate, two of metal patch 9 ranked second metallization via hole 20 and two and ranked third metallization via hole 21 and form rectangular box, on top dielectric substrate, each second metallization via hole 20 and each 3rd of metal patch 7 upper surface metallizes via hole 21 from top to bottom respectively successively through metal patch 7 on top dielectric substrate, top dielectric substrate 4, metal patch 8 under top dielectric substrate, on layer dielectric substrate, each second metallization via hole 20 and each 3rd of metal patch 9 upper surface metallizes via hole 21 from top to bottom respectively successively through metal patch 9 on layer dielectric substrate, layer dielectric substrate 6, metal patch 10 under layer dielectric substrate, on the dielectric substrate of middle level, one end of metal patch 11 is connected with a long balance microstrip line 17, on the dielectric substrate of middle level, the other end of metal patch 11 is connected with a short balance microstrip line 18, under the dielectric substrate of middle level, one end of metal patch 12 is connected with a long balance microstrip line 17, under the dielectric substrate of middle level, the other end of metal patch 12 is connected with a short balance microstrip line 18, left side oscillator 1 and right side oscillator 2 are printed on the upper surface of middle level dielectric substrate 5 other end along the center line symmetry of middle level dielectric substrate 5, the left side straight flange of oscillator 1 and the middle line parallel of middle level dielectric substrate 5 away from center line, the right side straight flange of oscillator 2 and the middle line parallel of middle level dielectric substrate 5 away from center line, the arc-shaped edges of left side oscillator 1 is connected with the short balance microstrip line 18 being positioned at middle level dielectric substrate 5 upper surface, load disk 3 to be connected with the arc-shaped edges of left side oscillator 1, the middle part of right side oscillator 2 arc-shaped edges is provided with the 4th metallization via hole 22, 4th metallization via hole 22 is from top to bottom successively through right side oscillator 2, middle level dielectric substrate 5 and the metal transfer sheet 23 be positioned on middle level dielectric substrate 5 lower surface, metal transfer sheet 23 is printed on the lower surface of middle level dielectric substrate 5 other end, and metal transfer sheet 23 is connected with the short balance microstrip line 18 be positioned on middle level dielectric substrate 5 lower surface.
Present embodiment is dielectric substrate 4 at the middle and upper levels, middle level dielectric substrate 5, layer dielectric substrate 6, metal patch 7 on top dielectric substrate, metal patch 8 under top dielectric substrate, metal patch 9 on layer dielectric substrate, metal patch 10 under layer dielectric substrate, metal patch 11 on the dielectric substrate of middle level, metal patch 12 under the dielectric substrate of middle level, metal strap 13 under two top dielectric substrates, two middle level dielectric substrate metal strip on gas 14, metal strap 15 under two middle level dielectric substrates, two layer dielectric substrate metal strip on gas 16 form wave conductor, left side oscillator 1, right side oscillator 2, loading disk 3, the 4th metallization via hole 22 and middle level dielectric substrate 5 form antenna body.
In present embodiment, left side oscillator 1 and right side oscillator 2 constitute the radiant section of antenna, and the reflection of electromagnetic wave that the Mutational part that left side oscillator 1 and right side oscillator 2 reduce structure causes, has widened antenna impedance bandwidth, thus reached ultra broadband characteristic.
Embodiment two: composition graphs 5 to Figure 10 illustrates present embodiment, the length of the top dielectric substrate 4 of the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition described in present embodiment is 50mm, the width of top dielectric substrate 4 is 35mm, the thickness of top dielectric substrate 4 is 1.5mm, the length of middle level dielectric substrate 5 is 112mm, the width of middle level dielectric substrate 5 is 35mm, the thickness of middle level dielectric substrate 5 is 1.5mm, the length of layer dielectric substrate 6 is 50mm, the width of layer dielectric substrate 6 is 35mm, the thickness of layer dielectric substrate 6 is 1.5mm, on the dielectric substrate of middle level, the length of metal patch 11 is 50mm, on the dielectric substrate of middle level, the width of metal patch 11 is 16mm, on the dielectric substrate of middle level, the thickness of metal patch 11 is 0.01mm-0.04mm, under the dielectric substrate of middle level, the length of metal patch 12 is 50mm, under the dielectric substrate of middle level, the width of metal patch 12 is 16mm, under the dielectric substrate of middle level, the thickness of metal patch 12 is 0.01mm-0.04mm.Top dielectric substrate 4 in present embodiment, middle level dielectric substrate 5 and layer dielectric substrate 6 all adopt dielectric constant be 4.4 epoxy glass cloth laminated board make, setting like this, top dielectric substrate 4, middle level dielectric substrate 5 and layer dielectric substrate 6 electric property good stability in high temperature environments.Other composition and annexation identical with embodiment one.
Embodiment three: composition graphs 7 and Fig. 8 illustrate present embodiment, the radius of the left side oscillator 1 of the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition described in present embodiment is 11mm, the radius of right side oscillator 2 is 11mm, the radius loading disk 3 is 2mm, and left side oscillator 1 is 2mm with the spacing L1 of right side oscillator 2.Other composition and annexation identical with embodiment one.
Embodiment four: composition graphs 2 to Figure 10 illustrates present embodiment, the diameter 2mm of each first metallization via hole 19 of the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition described in present embodiment, the centre-to-centre spacing of adjacent two first metallization via holes 19 is 3mm, the diameter of each second metallization via hole 20 is 2mm, the diameter of each 3rd metallization via hole 21 is 2mm, the diameter of each 4th metallization via hole 22 is 2mm, and the distance L2 between the center of each second metallization via hole 20 and top dielectric substrate 4 center line is 8mm.Other composition and annexation identical with embodiment one.
Embodiment five: composition graphs 7 and Fig. 8 illustrate present embodiment, the each long balance microstrip line 17 of the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition described in present embodiment is made up of the first trapezoidal transition plate 17-1 and the first rectangular transition plate 17-2, the minor face of the first trapezoidal transition plate 17-1 is connected with a minor face of the first rectangular transition plate 17-2 and makes one, each short balance microstrip line 18 is made up of the second trapezoidal transition plate 18-1 and the second rectangular transition plate 18-2, the minor face of the second trapezoidal transition plate 18-1 is connected with a minor face of the second rectangular transition plate 18-2 and makes one.Present embodiment makes long balance microstrip line 17 and short balance microstrip line 18 have the sectional area of gradual change, forms certain inclination angle, reaches microstrip transition object, can play impedance matching effect, so arrange, meet the design requirements and the actual needs.Other composition and annexation identical with embodiment one.
Embodiment six: composition graphs 7 and Fig. 8 illustrate present embodiment, the length L3 on each first long base of trapezoidal transition plate 17-1 of the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition described in present embodiment is 18mm, the length L4 on the short base of each First Transition plate 17-1 is 5mm, the high H1 of each first trapezoidal transition plate 17-1 is 30mm, the length L5 of each first rectangular transition plate 17-2 minor face is 5mm, the length L6 on each first long limit of rectangular transition plate 17-2 is 5mm, the length L7 on each second long base of trapezoidal transition plate 18-1 is 12mm, the length L8 on each second short base of trapezoidal transition plate 18-1 is 3mm, the high H2 of each second trapezoidal transition plate 18-1 is 10mm, the length L9 on each second long limit of rectangular transition plate 18-2 is 5mm, the length L10 of each second rectangular transition plate 18-2 minor face is 3mm.Other composition and annexation identical with embodiment five.
Embodiment seven: composition graphs 1 illustrates present embodiment, the refractory material of the top dielectric substrate 4 of the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition described in present embodiment, middle level dielectric substrate 5 and layer dielectric substrate 6 to be all refractory material grades be FR-4 makes.In present embodiment, FR-4 is a kind of code name of refractory material grade, and the representative resin material that is meant to must a kind of material specification of self-extinguish through fired state, and it is not a kind of title material, but a kind of material rate.Other composition and annexation and embodiment one, two, three or four identical.
Operation principle
Left side of the present invention oscillator 1 and right side oscillator 2 are the radiant body of antenna, and the composition of the CURRENT DISTRIBUTION on the long limit of waveguide sections can be divided into two parts: the electric current that a part is come by feeding transmission; Another part is the electric current that the current emissions on antenna radiator induces in the waveguide metal of close together.Be subject to the impact of waveguiding structure, the electric current transmitted by feed end can not cause radiation, the electric current that can produce radiation is only the electric current that radiant body induces, the electric current of metal radiation surface is mainly distributed in left side oscillator 1, right side oscillator 2 and loads the edge of disk 3, the contribution of electric current to radiant body at edge is main, due to the circular arc at the edge of left side oscillator 1 and right side oscillator 2, the ELECTROMAGNETIC REFLECTION that the Mutational part reducing structure causes, widen antenna impedance bandwidth, thus reach ultra broadband characteristic.
As can be seen from the test result in Figure 11, the bandwidth of operation of antenna be 2.5-20GHz (| S 11| <-6dB), cover whole C/X/Ku wave band, part covers S-band.Than bandwidth 8:1, reach the index of ultra-wideband antenna, also reach the ratio bandwidth requirement that FCC specifies.
Can find out from Figure 12 to Figure 15 that antenna is better in the directionality of low-frequency range (4-6GHz), inventive antenna may be used for directed electromagnetic radiation and reception.

Claims (7)

1. the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition, it is characterized in that: the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of described balance microstrip line transition comprises semicircular dipole assembly, load disk (3), top dielectric substrate (4), middle level dielectric substrate (5), layer dielectric substrate (6), metal patch (7) on top dielectric substrate, metal patch (8) under top dielectric substrate, metal patch (9) on layer dielectric substrate, metal patch (10) under layer dielectric substrate, metal patch (11) on the dielectric substrate of middle level, metal patch (12) under the dielectric substrate of middle level, metal transfer sheet (23), metal strap (13) under two top dielectric substrates, two middle levels dielectric substrate metal strip on gas (14), metal strap (15) under two middle level dielectric substrates, two layer dielectric substrate metal strip on gas (16), two long balance microstrip line (17) and two short balance microstrip line (18), semicircular dipole assembly comprises left side oscillator (1) and right side oscillator (2), on top dielectric substrate, metal patch (7) is arranged on the upper surface of top dielectric substrate (4), under top dielectric substrate, metal patch (8) is arranged on the middle part of top dielectric substrate (4) lower surface, top dielectric substrate (4) lower surface along its length both sides of the edge is respectively provided with metal strap (13) under a top dielectric substrate respectively, on layer dielectric substrate, metal patch (9) is arranged on the middle part of layer dielectric substrate (6) upper surface, layer dielectric substrate (6) upper surface along its length both sides of the edge is respectively provided with a layer dielectric substrate metal strip on gas (16) respectively, the lower surface of layer dielectric substrate (6) is provided with metal patch (10) under layer dielectric substrate, the middle part of middle level dielectric substrate (5) upper surface is provided with metal patch (11) on the dielectric substrate of middle level, the middle part of middle level dielectric substrate (5) lower surface is provided with metal patch (12) under the dielectric substrate of middle level, middle level dielectric substrate (5) upper surface both sides of the edge along its length are respectively provided with middle level dielectric substrate metal strip on gas (14) respectively, middle level dielectric substrate (5) lower surface both sides of the edge along its length are respectively provided with metal strap (15) under a middle level dielectric substrate respectively, top dielectric substrate (4), middle level dielectric substrate (5), layer dielectric substrate (6) superposes setting from top to bottom successively, and metal patch (8) contacts with metal patch (11) on the dielectric substrate of middle level under top dielectric substrate, on layer dielectric substrate, metal patch (9) contacts with metal patch (12) under the dielectric substrate of middle level, under each top dielectric substrate, metal strap (13) contacts with corresponding middle level dielectric substrate metal strip on gas (14), each layer dielectric substrate metal strip on gas (16) contacts with metal strap (15) under corresponding middle level dielectric substrate, on top dielectric substrate, metal patch (7) upper surface both sides of the edge along its length are respectively provided with one respectively and ranked first metallization via hole (19), each first metallization via hole (19) is from top to bottom successively through metal patch (7) on top dielectric substrate, top dielectric substrate (4), metal strap (13) under top dielectric substrate, middle level dielectric substrate metal strip on gas (14), middle level dielectric substrate (5), metal strap (15) under the dielectric substrate of middle level, layer dielectric substrate metal strip on gas (16), metal patch (10) under layer dielectric substrate (6) and layer dielectric substrate, on top dielectric substrate, on metal patch (7) upper surface middle part and layer dielectric substrate, metal patch (9) upper surface middle part is respectively provided with two along its length respectively and ranked second metallization via hole (20), on top dielectric substrate, on metal patch (7) upper surface middle part and layer dielectric substrate, metal patch (9) upper surface middle part broad ways is respectively provided with two respectively and ranked third metallization via hole (21), on top dielectric substrate two of metal patch (7) ranked second metallization via hole (20) and two ranked third metallization via hole (21) formation rectangular box, on layer dielectric substrate two of metal patch (9) ranked second metallization via hole (20) and two ranked third metallization via hole (21) formation rectangular box, on top dielectric substrate, each second metallization via hole (20) and each 3rd of metal patch (7) upper surface metallizes via hole (21) from top to bottom respectively successively through metal patch (7) on top dielectric substrate, top dielectric substrate (4), metal patch (8) under top dielectric substrate, on layer dielectric substrate, each second metallization via hole (20) and each 3rd of metal patch (9) upper surface metallizes via hole (21) from top to bottom respectively successively through metal patch (9) on layer dielectric substrate, layer dielectric substrate (6), metal patch (10) under layer dielectric substrate, on the dielectric substrate of middle level, one end of metal patch (11) is connected with a long balance microstrip line (17), on the dielectric substrate of middle level, the other end of metal patch (11) is connected with a short balance microstrip line (18), under the dielectric substrate of middle level, one end of metal patch (12) is connected with a long balance microstrip line (17), under the dielectric substrate of middle level, the other end of metal patch (12) is connected with a short balance microstrip line (18), left side oscillator (1) is printed on the upper surface of middle level dielectric substrate (5) other end with right side oscillator (2) along the center line symmetry of middle level dielectric substrate (5), left side oscillator (1) straight flange and middle level dielectric substrate (5) middle line parallel and away from center line, right side oscillator (2) straight flange and middle level dielectric substrate (5) middle line parallel and away from center line, the arc-shaped edges in left side oscillator (1) is connected with the short balance microstrip line (18) being positioned at middle level dielectric substrate (5) upper surface, load disk (3) to be connected with the arc-shaped edges of left side oscillator (1), the middle part of right side oscillator (2) arc-shaped edges is provided with the 4th metallization via hole (22), 4th metallization via hole (22) is from top to bottom successively through right side oscillator (2), middle level dielectric substrate (5) and the metal transfer sheet (23) be positioned on middle level dielectric substrate (5) lower surface, metal transfer sheet (23) is printed on the lower surface of middle level dielectric substrate (5) other end, and metal transfer sheet (23) is connected with the short balance microstrip line (18) be positioned on middle level dielectric substrate (5) lower surface.
2. the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition according to claim 1, it is characterized in that: the length of top dielectric substrate (4) is 50mm, the width of top dielectric substrate (4) is 35mm, the thickness of top dielectric substrate (4) is 1.5mm, the length of middle level dielectric substrate (5) is 112mm, the width of middle level dielectric substrate (5) is 35mm, the thickness of middle level dielectric substrate (5) is 1.5mm, the length of layer dielectric substrate (6) is 50mm, the width of layer dielectric substrate (6) is 35mm, the thickness of layer dielectric substrate (6) is 1.5mm, on the dielectric substrate of middle level, the length of metal patch (11) is 50mm, on the dielectric substrate of middle level, the width of metal patch (11) is 16mm, on the dielectric substrate of middle level, the thickness of metal patch (11) is 0.01mm-0.04mm, under the dielectric substrate of middle level, the length of metal patch (12) is 50mm, under the dielectric substrate of middle level, the width of metal patch (12) is 16mm, under the dielectric substrate of middle level, the thickness of metal patch (12) is 0.01mm-0.04mm.
3. the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition according to claim 1, it is characterized in that: the radius of left side oscillator (1) is 11mm, the radius on right side oscillator (2) is 11mm, the radius loading disk (3) is 2mm, and left side oscillator (1) is 2mm with the spacing (L1) of right side oscillator (2).
4. the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition according to claim 1, it is characterized in that: the diameter 2mm of each first metallization via hole (19), the centre-to-centre spacing of adjacent two first metallization via hole (19) is 3mm, the diameter of each second metallization via hole (20) is 2mm, the diameter of each 3rd metallization via hole (21) is 2mm, the diameter of each 4th metallization via hole (22) is 2mm, distance (L2) between the center of each second metallization via hole (20) and top dielectric substrate (4) center line is 8mm.
5. the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition according to claim 1, it is characterized in that: each long balance microstrip line (17) is made up of the first trapezoidal transition plate (17-1) and the first rectangular transition plate (17-2), the minor face of the first trapezoidal transition plate (17-1) is connected with a minor face of the first rectangular transition plate (17-2) and makes one, each short balance microstrip line (18) is made up of the second trapezoidal transition plate (18-1) and the second rectangular transition plate (18-2), the minor face of the second trapezoidal transition plate (18-1) is connected with a minor face of the second rectangular transition plate (18-2) and makes one.
6. the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition according to claim 5, it is characterized in that: the length (L3) on each first trapezoidal transition plate (17-1) long base is 18mm, the length (L4) on each first trapezoidal transition plate (17-1) short base is 5mm, the height (H1) of each first trapezoidal transition plate (17-1) is 30mm, the length (L5) of each first rectangular transition plate (17-2) minor face is 5mm, the length (L6) on each first rectangular transition plate (17-2) long limit is 5mm, the length (L7) on each second trapezoidal transition plate (18-1) long base is 12mm, the length (L8) on each second trapezoidal transition plate (18-1) short base is 3mm, the height (H2) of each second trapezoidal transition plate (18-1) is 10mm, the length (L9) on each second rectangular transition plate (18-2) long limit is 5mm, the length (L10) of each second rectangular transition plate (18-2) minor face is 3mm.
7. the two ridge integrated waveguide feed symmetrical dipole printed antenna of the full mould of balance microstrip line transition according to claim 1,2,3 or 4, is characterized in that: the refractory material making of top dielectric substrate (4), middle level dielectric substrate (5) and layer dielectric substrate (6) to be all refractory material grades be FR-4.
CN201210424564.9A 2012-10-30 2012-10-30 Balance microstrip line transition full-mode dual-ridged integrated waveguide feed dipole printed antenna Active CN102904011B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210424564.9A CN102904011B (en) 2012-10-30 2012-10-30 Balance microstrip line transition full-mode dual-ridged integrated waveguide feed dipole printed antenna

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210424564.9A CN102904011B (en) 2012-10-30 2012-10-30 Balance microstrip line transition full-mode dual-ridged integrated waveguide feed dipole printed antenna

Publications (2)

Publication Number Publication Date
CN102904011A CN102904011A (en) 2013-01-30
CN102904011B true CN102904011B (en) 2015-01-14

Family

ID=47576145

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210424564.9A Active CN102904011B (en) 2012-10-30 2012-10-30 Balance microstrip line transition full-mode dual-ridged integrated waveguide feed dipole printed antenna

Country Status (1)

Country Link
CN (1) CN102904011B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103178341B (en) * 2013-03-12 2014-12-10 东南大学 Indoor high-speed communication antenna of wide-beam Q-band millimeter waves
CN104167608A (en) * 2014-08-08 2014-11-26 电子科技大学 Balance Vivaldi slotted antenna based on folded substrate integrated waveguide feed
CN106486758B (en) * 2015-08-26 2021-06-22 小米科技有限责任公司 Antenna, mobile terminal rear cover and mobile terminal
CN108258404A (en) * 2018-01-08 2018-07-06 西安电子工程研究所 A kind of plane dipole antenna with low rejection characteristic
CN110350282B (en) * 2019-07-15 2024-01-12 云南大学 Directional coupler based on double-ridge integrated substrate gap waveguide
CN111009730A (en) * 2019-12-03 2020-04-14 西安电子科技大学 Opposite-extension Vivaldi antenna with substrate integrated double-ridge waveguide feed and application

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101075702A (en) * 2007-06-19 2007-11-21 东南大学 Printing antenna with baseplate integrated waveguide feeder
CN201174415Y (en) * 2008-04-03 2008-12-31 南京理工大学 Half-modular chip integrated waveguide stereo power distributor adopting ladder transition
CN101752659A (en) * 2010-02-10 2010-06-23 东南大学 Ultrabroad band double-faced transition groove wire antenna using coplanar waveguide feed
CN102709658A (en) * 2012-06-08 2012-10-03 哈尔滨工业大学 Half mode double-ridge substrate integrated waveguide with transitional balanced micro-strip lines
CN102723601A (en) * 2012-06-19 2012-10-10 北京航空航天大学 Ultra-wide-band dual-notch paster antenna adopting wide-attenuation-band electromagnetic band gap structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101075702A (en) * 2007-06-19 2007-11-21 东南大学 Printing antenna with baseplate integrated waveguide feeder
CN201174415Y (en) * 2008-04-03 2008-12-31 南京理工大学 Half-modular chip integrated waveguide stereo power distributor adopting ladder transition
CN101752659A (en) * 2010-02-10 2010-06-23 东南大学 Ultrabroad band double-faced transition groove wire antenna using coplanar waveguide feed
CN102709658A (en) * 2012-06-08 2012-10-03 哈尔滨工业大学 Half mode double-ridge substrate integrated waveguide with transitional balanced micro-strip lines
CN102723601A (en) * 2012-06-19 2012-10-10 北京航空航天大学 Ultra-wide-band dual-notch paster antenna adopting wide-attenuation-band electromagnetic band gap structure

Also Published As

Publication number Publication date
CN102904011A (en) 2013-01-30

Similar Documents

Publication Publication Date Title
CN102904011B (en) Balance microstrip line transition full-mode dual-ridged integrated waveguide feed dipole printed antenna
CN106848554B (en) A kind of ultra wide bandwidth angle antenna array based on interdigitated coupled dipole unit
CN106654555B (en) Small-size asymmetric high-isolation UWB-MIMO antenna
CN107785661A (en) A kind of uncoupling array antenna based on double frequency Meta Materials
CN207517886U (en) A kind of antenna for base station and base station radio-frequency equipment
CN103259094A (en) Miniature dual-band-stop ultra-wide band micro-strip antenna
CN104377450A (en) Waveguide horn array, waveguide horn array method and antenna system
CN101777691B (en) Slot printing monopole ultra-wideband antenna
CN103178341B (en) Indoor high-speed communication antenna of wide-beam Q-band millimeter waves
CN113937488A (en) High-isolation low-profile broadband base station antenna, control method and application
CN110112549A (en) A kind of three frequency dual polarized antenna of differential feed
CN204361257U (en) A kind of is the three frequency microstrip antenna of ring-type based on defect ground structure housing
CN203690491U (en) Ultra-wideband antenna with WLAN dual band-notched characteristic
CN101227028B (en) Double frequency slit antenna of substrate integrated waveguide
CN102904012B (en) Combined semicircular dipole printed antenna of balance microstrip line transition waveguide feed
CN201178135Y (en) Bi-frequency slit antenna of substrate integrated waveguide
CN203180064U (en) Mini-sized asymmetric plane ultra-wideband antenna
CN203386904U (en) Broadband micro-strip antenna and antenna array
CN203180055U (en) Improved square spiral ultra-wideband antenna
CN101494314B (en) Antenna structure
CN105490012B (en) A kind of CPW feed double-frequency micro-strip antenna
CN102760944A (en) Omnidirectional radiation vibrator array antenna for loaded coupled feeding
CN106684544B (en) A kind of miniaturization monopole ultra-wideband antenna
CN201741806U (en) Low temperature co-fired ceramic (LTCC) electric small-integrated antenna for radio frequency (RF) front end system
CN101707284A (en) LTCC electrically small integrated antenna for radio-frequency front-end system

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant