CN104363058A - High-speed data transmission system based on half mode substrate integrated waveguide (HMSIW) interconnection - Google Patents
High-speed data transmission system based on half mode substrate integrated waveguide (HMSIW) interconnection Download PDFInfo
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- CN104363058A CN104363058A CN201410567668.4A CN201410567668A CN104363058A CN 104363058 A CN104363058 A CN 104363058A CN 201410567668 A CN201410567668 A CN 201410567668A CN 104363058 A CN104363058 A CN 104363058A
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Abstract
The invention discloses a high-speed data transmission system based on half mode substrate integrated waveguide (HMSIW) interconnection. The high-speed data transmission system comprises a modulation module, a HMSIW interconnection structure and a demodulation module. The modulation module modulates inputted binary signals, the demodulation module performs demodulation output on receiving signals, and the HMSIW interconnection structure serving as a system interconnection transmission channel has the modulation module and the demodulation module connected. The HMSIW structure is applied to the high-speed interconnection system of a microwave frequency band, the inputted binary signals are modulated and are transmitted through the HMSIW interconnection, the received signals are subjected to demodulation output, and high-speed data transmission is realized.
Description
Technical field
The present invention relates to half module substrate integrated wave guide (HMSIW), the modulation and demodulation of signal and the high speed interconnection technology field of microwave frequency band, specifically a kind of high speed data transmission system based on half module substrate integrated wave guide interconnection.
Background technology
In recent years, along with communication technology develop rapidly, the developmental research of microwave and millimetre-wave attenuator device and system causes more and more concern.The operating frequency of digital signal reaches millimeter wave frequency band, and the transmission rate that in high-speed interconnect field, single interconnect wire requires reaches more than 10Gbps.High speed interconnection technology more and more becomes an important topic, between the chips, between circuit board and the interconnecting transfer realizing high-speed low-consumption between equipment more and more paid attention in design of circuit system.Traditional interconnect devices such as microstrip line, the advantages such as strip line etc., have bandwidth, and dispersion is low, but comparatively large at its loss of high band and radiation loss, be difficult to the requirement meeting the interconnect devices such as high-performance, low-loss and high reliability.Therefore, seek a kind of high-performance, easy of integration, volume is little, study hotspot that high speed interconnect structure that cost is low is high speed data transfer always.
Half module substrate integrated wave guide (HMSIW) is developed by substrate integration wave-guide (SIW), is similar to the half of substrate integration wave-guide in appearance.Its basic structure arranges periodically metal throuth hole by side one on the medium substrate of double-sided copper-clad and substrate formed.The pitch of holes of arranging metal throuth hole due to side one is far smaller than wavelength, and therefore the energy of gap leakage is very little, can think the electric wall that formation one is equivalent; And in opposite side edge, owing to being dielectric-slab, another side is air, according to electromagnetic field principle, when the difference in dielectric constant of two kinds of mediums is larger, its interface can be equivalent to magnetic wall, therefore can think the magnetic wall that formation one is equivalent.The overwhelming majority in the electromagnetic energy of generation is limited in space wherein and propagates by so electric wall and magnetic wall.Half module substrate integrated wave guide has the performance of substrate integration wave-guide; not only overcome the shortcoming of conventional interconnect; have that loss is little, crosstalk is low at high band, high, the high broadband of Q value and the advantage such as passband is smooth; and it is easy to processing; easy of integration, with low cost, considerably increase its practicality; therefore, half module substrate integrated wave guide transmitting high speed digital signal is utilized to become the direction of this area research.And half module substrate integrated wave guide is compared with full mould substrate integration wave-guide, when duct width size is a half of full mould substrate integration wave-guide width, its bandwidth is 2 times of full mould substrate integration wave-guide bandwidth.
Summary of the invention
For the technical problem existed in above-mentioned prior art; the invention provides a kind of high speed data transmission system based on half module substrate integrated wave guide interconnection; by half module substrate integrated wave guide interconnection structure in conjunction with the high speed interconnection system of modulation and demodulation module application in microwave frequency band; adopt half module substrate integrated wave guide as high speed interconnect structure, and modulation and demodulation process is carried out to signal.Half module substrate integrated wave guide interconnection structure have low in high band loss, Q value is high, easy of integration, the feature of low cost and miniaturization.High speed data transmission system based on half module substrate integrated wave guide interconnection has the feature of low error rate and high transfer rate.
For achieving the above object, the technical solution adopted in the present invention is as follows:
Based on the high speed data transmission system of half module substrate integrated wave guide interconnection; comprise modulation module, half module substrate integrated wave guide interconnection structure and demodulation module; wherein; the binary signal of described modulation module to input is modulated; described demodulation module carries out demodulation output to received signal; described half module substrate integrated wave guide interconnection structure, as system interconnection transmission channel, connects modulation module and demodulation module.
Preferably; described modulation module is up-conversion mixing unit; binary signal is connected to up-conversion mixing unit; carry out frequency translation; the binary signal of described modulation module to input is modulated, and the binary signal of described modulation module to input is modulated, and frequency is brought up in the frequency band of half module substrate integrated wave guide; be connected to half module substrate integrated wave guide to transmit, realize high speed data transfer.
Preferably; described half module substrate integrated wave guide interconnection structure comprises: input stimulus structure, output coupled structure; crossover sub structure and half module substrate integrated wave guide structure, described input stimulus structure is connected with described substrate integrated wave guide structure respectively by described crossover sub structure with output coupled structure.
Preferably, described half module substrate integrated wave guide structure comprises medium substrate and is embedded in medium substrate and arranges periodically metal throuth hole along one of side, medium substrate edge, the upper and lower surface-coated layers of copper of described medium substrate.
Preferably, the diameter d of described periodicity metal throuth hole is less than or equal to the medium wavelength X of 1/5
g, i.e. d≤0.2 λ
g; Adjacent holes interval S is not more than the metal throuth hole diameter d of twice, i.e. S≤2d.
Preferably, described input stimulus structure and described output coupled structure all adopt 50 ohm of planar microstrip lines.
Preferably; described crossover sub structure comprises: for connecting input stimulus structure with the input crossover sub of half module substrate integrated wave guide structure and for being connected the output crossover sub exporting coupled structure and half module substrate integrated wave guide structure, described input crossover sub and output crossover sub all adopt trapezoidal transition line structure.
Preferably; described demodulation module comprises: down-conversion mixing unit and low-pass filter unit; wherein; described down-conversion mixing unit is down-converted to base band to the modulation signal received; the output of down-conversion mixing unit is connected to low-pass filter unit; with the high fdrequency component filtering by signal, described demodulation module carries out demodulation output to the modulation signal after described half module substrate integrated wave guide interconnecting transfer.
Preferably, for ensureing the accurate demodulation of signal, the carrier wave of described modulation module is through a phase shifter, after producing certain phase deviation, obtain the carrier wave for described demodulation module, and this phase pushing figure is equal with the phase pushing figure that binary signal produces after substrate integration wave-guide interconnection structure transmits.
Half module substrate integrated wave guide structure is applied to high speed interconnection technology field in conjunction with modulation-demodulation technique by the present invention; the binary signal of input is through ovennodulation; frequency is brought up in the frequency band of half module substrate integrated wave guide; modulation signal is through half module substrate integrated wave guide interconnecting transfer; Received signal strength exports through demodulation again, thus realizes the transfer of data of two-forty.
The present invention compared with prior art, has the following advantages:
1, planarized structure: half module substrate integrated wave guide is applied in high speed interconnection system, input stimulus with export coupling mechanism and all adopt planar circuit, easily and other plane circuit integrated;
2, compact conformation, miniaturization: adopt half module substrate integrated wave guide, had larger reduction than on full mould substrate integration wave-guide and Rectangular Waveguide Structure volume and area;
3, low-loss, low crosstalk: adopt half module substrate integrated wave guide interconnection structure, less than traditional loss being interconnected in high band, and crosstalk between many interconnection lines is very low.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 is present system overall structure block diagram;
Fig. 2 is half module substrate integrated wave guide interconnection structure schematic diagram of the present invention;
Fig. 3 is half module substrate integrated wave guide structural representation of the present invention;
Fig. 4 is half module substrate integrated wave guide scattering (S) parameter schematic diagram of the present invention;
Fig. 5 is present system input/output signal comparison diagram; Wherein, (a) is input binary signal, and (b) is for exporting binary signal;
In figure: 1 is input stimulus structure, 2 for exporting coupled structure, and 3 is input crossover sub, and 4 is layers of copper, and 5 is output crossover sub, and 6 is periodicity metal throuth hole, and 7 is medium substrate.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in detail.Following examples will contribute to those skilled in the art and understand the present invention further, but not limit the present invention in any form.It should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, some distortion and improvement can also be made.These all belong to protection scope of the present invention.
Fig. 1 is the overall system structure block diagram of the present embodiment.Present embodiments provide a kind of high speed data transmission system based on half module substrate integrated wave guide interconnection (HMSIW); comprise modulation module, half module substrate integrated wave guide interconnection structure and demodulation module; wherein; the binary signal of modulation module to input is modulated; demodulation module carries out demodulation output to received signal; half module substrate integrated wave guide interconnection structure, as system interconnection transmission channel, connects modulation module and demodulation module.
First, the binary signal a of input
nthrough up-conversion mixing unit and carrier wave cos (2 π f
lOt) be multiplied, obtain modulation signal s (t).Half module substrate integrated wave guide interconnection structure transmission modulation signal s (t), exports as r (t).Then, after down-conversion mixing and low-pass filtering being carried out to signal transmission, output signal is obtained for y
n.
Fig. 2 is half module substrate integrated wave guide interconnection structure embodiment provided by the invention, comprising: interconnective input stimulus structure 1, output coupled structure 2, crossover sub structure (comprising input crossover sub 3 and output crossover sub 5) and half module substrate integrated wave guide structure.Half module substrate integrated wave guide structure comprises: medium substrate 7 and a row periodically metal throuth hole 6 be embedded in along a lateral edges in medium substrate 7.Medium substrate 7 upper and lower surface coating layers of copper 4; Input stimulus structure 1 is connected with half module substrate integrated wave guide structure with output adapter 5 respectively by input crossover sub 3 with output coupled structure 2.
Input crossover sub 3 and output crossover sub 5 adopt trapezoidal transition line structure, play the effect of impedance matching.Input stimulus structure 1 adopts 50 ohm of planar microstrip line structures; Export coupled structure 2 and adopt 50 ohm of planar microstrip line structures.
In the present embodiment; input stimulus structure 1 in half module substrate integrated wave guide interconnection structure and output coupled structure 2 are made up of the microstrip line of a section 50 ohm respectively; for the connection of half module substrate integrated wave guide and other circuit, microstrip line is connected with half module substrate integrated wave guide structure with output conversion head 5 through the input crossover sub 3 of trapezoidal transition line structure.Whole input stimulus structure and export coupled structure and be plane, has higher design freedom, easily processing, easy of integration.
Fig. 3 is half module substrate integrated wave guide constructive embodiment schematic diagram of the present invention.The plated-through hole 6 of the medium substrate 7 side edge period arrangement of half module substrate integrated wave guide structure, namely periodicity metal throuth hole, plays the effect of electric wall.Periodically the diameter d of metal throuth hole 6 is less than or equal to the medium wavelength X of 1/5
g, i.e. d≤0.2 λ
g; Adjacent holes interval S is not more than the metal throuth hole diameter d of twice, i.e. S≤2d, to reduce radiation loss.
The half module substrate integrated wave guide interconnection structure that the present embodiment provides, its centre frequency is selected at 17.6GHz, and bandwidth is at 8.8-26.4GHz.The relative dielectric constant ε of medium substrate
rbe 2.2, losstangenttanδ is 0.0009, and thickness h is 0.508mm; Input/output terminal micro belt line width W
1for 1.54mm, length is L
1for 4.7mm; Trapezoidal transition line crossover sub length L
2for 12mm, width W
2for 2.7mm; Half module substrate integrated wave guide structure length L
3for 31.2mm, the width W between metal throuth hole to opposite side metal edge is 5.7mm, and the diameter d of plated-through hole is 0.4mm, and the distance s of adjacent metal through hole is 0.8mm.
Fig. 4 is half module substrate integrated wave guide interconnection structure scattering (S) the parameters simulation figure of the present embodiment.Its centre frequency is 17.6GHz, and bandwidth is 8.8-26.4GHz, and in passband, Insertion Loss is about about 0.5dB, and return loss is all greater than 15dB.In Fig. 4, abscissa is frequency (Frequency), and unit is GHz; Ordinate is scattering parameter (S-parameters), and unit is dB.
Fig. 5 is the PRBS (2 of the high speed data transmission system transmission 8.8Gbps based on half module substrate integrated wave guide interconnection of the present embodiment
15-1) during sequence, its input/output signal (X
nand Y
n) comparison diagram.Wherein, (a) is input binary signal, and (b) is for exporting binary signal.Input signal creates certain time delay after system transfers, is about 1.6ns, and now error rate of system still lower than 1e-12.In Fig. 5, abscissa is the time (Time), and unit is nanosecond (nanosecond); A () figure ordinate is input signal (X
n) amplitude, (b) figure ordinate for output signal (Y
n) amplitude, unit is V.
High speed data transmission system based on half module substrate integrated wave guide interconnection provided by the invention, is applied to the high-speed interconnect field of microwave frequency band in conjunction with modulation-demodulation technique by half module substrate integrated wave guide structure.Described half module substrate integrated wave guide interconnection structure has low-loss, high q-factor, low crosstalk, low cost and feature easy of integration, makes system have good transmission characteristic; Native system is when substrate integration wave-guide bandwidth is 17.6GHz, and peak transfer rate can reach 8.8Gbps, and error rate of system is at below 1e-12.
Above specific embodiments of the invention are described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, those skilled in the art can make various distortion or amendment within the scope of the claims, and this does not affect flesh and blood of the present invention.
Claims (9)
1. the high speed data transmission system based on half module substrate integrated wave guide interconnection; it is characterized in that; comprise modulation module, half module substrate integrated wave guide interconnection structure and demodulation module; wherein; the binary signal of described modulation module to input is modulated; described demodulation module carries out demodulation output to received signal, and described half module substrate integrated wave guide interconnection structure, as system interconnection transmission channel, connects described modulation module and demodulation module.
2. the high speed data transmission system based on half module substrate integrated wave guide interconnection according to claim 1; it is characterized in that; described modulation module is up-conversion mixing unit; binary signal is connected to up-conversion mixing unit; carry out frequency translation, the binary signal of described modulation module to input is modulated, and frequency is brought up in the frequency band of half module substrate integrated wave guide; be connected to half module substrate integrated wave guide to transmit, realize high speed data transfer.
3. the high speed data transmission system based on half module substrate integrated wave guide interconnection according to claim 1; it is characterized in that; described half module substrate integrated wave guide interconnection structure comprises: input stimulus structure, output coupled structure; crossover sub structure and half module substrate integrated wave guide structure, described input stimulus structure is connected with described half module substrate integrated wave guide structure respectively by described crossover sub structure with output coupled structure.
4. the high speed data transmission system based on half module substrate integrated wave guide interconnection according to claim 3; it is characterized in that; described half module substrate integrated wave guide structure comprises medium substrate and is embedded in medium substrate and arranges periodically metal throuth hole along one of medium substrate one lateral edges arrangement, the upper and lower surface-coated layers of copper of described medium substrate.
5. the high speed data transmission system based on half module substrate integrated wave guide interconnection according to claim 4, it is characterized in that, the diameter d of described periodicity metal throuth hole is less than or equal to the medium wavelength X of 1/5
g, i.e. d≤0.2 λ
g; Adjacent holes interval S is not more than the metal throuth hole diameter d of twice, i.e. S≤2d.
6. the high speed data transmission system based on half module substrate integrated wave guide interconnection according to claim 3, it is characterized in that, described input stimulus structure and described output coupled structure all adopt 50 ohm of planar microstrip lines.
7. the high speed data transmission system based on half module substrate integrated wave guide interconnection according to claim 3 or 6; it is characterized in that; described crossover sub structure comprises: for connecting the input crossover sub of input stimulus structure and half module substrate integrated wave guide structure; and for connecting the output crossover sub exporting coupled structure and half module substrate integrated wave guide structure, described input crossover sub and output crossover sub all adopt trapezoidal transition line structure.
8. the high speed data transmission system based on half module substrate integrated wave guide interconnection according to claim 1, it is characterized in that, described demodulation module comprises down-conversion mixing unit and low-pass filter unit.Wherein, described down-conversion mixing unit is down-converted to base band to the modulation signal received, the output of down-conversion mixing unit is connected to low-pass filter unit, with the high fdrequency component filtering by signal, described demodulation module carries out demodulation output to the modulation signal after described substrate integration wave-guide interconnecting transfer.
9. the high speed data transmission system based on half module substrate integrated wave guide interconnection according to claim 1; it is characterized in that; for ensureing the accurate demodulation of signal; the carrier wave of described modulation module is through a phase shifter; after producing certain phase deviation; obtain the carrier wave of described demodulation module, and this phase pushing figure is equal with the phase pushing figure that binary signal produces after substrate integration wave-guide interconnection structure transmits.
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| CN1877903A (en) * | 2006-07-10 | 2006-12-13 | 东南大学 | Hemi-membrane substrate integrated waveguide |
| CN101276957A (en) * | 2008-03-04 | 2008-10-01 | 东南大学 | Multiple attenuation band ultra-wideband antenna of integration waveguide cavity based on semi-norm substrate |
| CN202633486U (en) * | 2012-05-14 | 2012-12-26 | 鲍峻松 | Ridged half-mode substrate integrated waveguide transmission line for microwave circuit and millimeter wave circuit |
| CN103457904A (en) * | 2013-08-23 | 2013-12-18 | 上海交通大学 | 16QAM high-speed data transmission system based on substrate integrated waveguide interconnection |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1877903A (en) * | 2006-07-10 | 2006-12-13 | 东南大学 | Hemi-membrane substrate integrated waveguide |
| CN101276957A (en) * | 2008-03-04 | 2008-10-01 | 东南大学 | Multiple attenuation band ultra-wideband antenna of integration waveguide cavity based on semi-norm substrate |
| CN202633486U (en) * | 2012-05-14 | 2012-12-26 | 鲍峻松 | Ridged half-mode substrate integrated waveguide transmission line for microwave circuit and millimeter wave circuit |
| CN103457904A (en) * | 2013-08-23 | 2013-12-18 | 上海交通大学 | 16QAM high-speed data transmission system based on substrate integrated waveguide interconnection |
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