CN109361040A - Broad-band chip integrates gap waveguide bandpass filter - Google Patents
Broad-band chip integrates gap waveguide bandpass filter Download PDFInfo
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- CN109361040A CN109361040A CN201811350743.6A CN201811350743A CN109361040A CN 109361040 A CN109361040 A CN 109361040A CN 201811350743 A CN201811350743 A CN 201811350743A CN 109361040 A CN109361040 A CN 109361040A
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- gap
- bandpass filter
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20327—Electromagnetic interstage coupling
- H01P1/20354—Non-comb or non-interdigital filters
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Abstract
Broad-band chip of the present invention integrates gap waveguide bandpass filter and is bonded by three layers of dielectric-slab.Top layer dielectric-slab is equipped with periodical metallic vias, and there is metal layer in upper surface, and there is circular metal patch in lower surface, forms PMC." class cross " gap is opened on the metal layer of underlying dielectric plate upper surface, there is gap between two " class cross " gaps of intermediate two " class cross " gaps column, and gapless between " class cross " gap that " class cross " gap arranges two on side；In the perimeter etch small gap of different shapes of " class cross " gap column；Metal layer both ends, which are taken over, crosses transition line and feeding microstrip line.Underlying dielectric plate two sides and middle position are equipped with periodical metallic vias respectively, and ground metal layer is printed in lower surface.The present invention realizes wide band bandpass filter, solves the problems, such as that there are radiation losses and plane wave in conventional filter, while having many advantages, such as Out-of-band rejection degree height, stable structure.
Description
Technical field
The present invention relates to electronic technology fields, and in particular to broad-band chip integrates gap waveguide bandpass filter.
Background technique
With the development of wireless communication technique, the growing tension in short supply highlighted of frequency spectrum resource, microwave band-pass filter exists
Status therein is all the more important.Since entire wireless communication system develops towards high-performance direction, this is to filter in system
More stringent requirements are proposed for performance.
Substrate integration wave-guide (Substrate Integrated Waveguide, SIW) is by medium substrate, up and down gold
Category face, plated-through hole composition class waveguiding structure, while also having small in size, low cost, easy to process and integrated excellent concurrently
Characteristic, this makes it be used widely in the design of filter.In the design of SIW filter, metal covering is descended to open on it
Gap is to form the important method that stopband is the design of its filter.But this SIW filter cannot effectively inhibit space
Radiation and plane wave.The integrated gap waveguide of the substrate being recently proposed (Substrate Integrated Gap Waveguide,
SIGW it) is used to encapsulation microwave circuit, space radiation and surface wave is restrained effectively, has and be simple to manufacture, low, structure is lost
Stablize, transmission performance is good and the wider characteristic of bandwidth of operation.
The present invention realizes the broadband band-pass filter from encapsulation using SIGW, can not only inhibit space radiation and plane
Wave, and help to realize high Out-of-band rejection and improve pass band transfer performance.By the way that SIGW structure is added, make cascading filter
Each rank circuit in increase in parallel capacitor and inductance.To make Chebyshev filter become elliptic filter, and keep it logical
Band two sides all have transmission zero (Transmission Zero, TZ), and attenuation outside a channel is more precipitous.
The content of present invention has no open report same as the present invention by literature search.
Summary of the invention
It is an object of the invention to overcome the deficiency of the prior art, designs broad-band chip and integrates gap waveguide bandpass filtering
Device.
Broad-band chip of the present invention integrates gap waveguide bandpass filter, comprising: top layer dielectric-slab (1), interlayer plate
(2), underlying dielectric plate (3), in which:
A, three column period 1 property metallic vias (4) are equipped on top layer dielectric-slab (1), surface printing has metal layer (14) thereon,
Lower surface is printed with circular metal patch (5)；
B, the upper surface of underlying dielectric plate (3) is printed with metal layer (15), and lower surface is printed with metal layer (16)；Underlying dielectric plate
(3) both sides of the edge are equipped with Secondary periodicity metallic vias (17), and are equipped with third periodic metallic vias in middle position
(6)；" class cross " gap (21), every two " class cross " are provided on the upper surface metal layer (15) of underlying dielectric plate (3)
Gap constitutes " class cross " gap column；Two intermediate " class cross " gaps are classified as first group of " class cross " gap
It arranges (7,8), two " class cross " gaps on side are that second group of " class cross " gap arranges (9,19)；Each of first group
" class cross " gap column (7,8) are made of two spaced " class cross " gaps, second group each " class cross
Shape " gap column (9,19) are made of two continuous " class cross " gaps；Each " class cross " gap column (7,8,9,
19) symmetrical about y-axis and third periodic metallic vias (6)；In each " class cross " gap column (7,8,9,19)
Perimeter etch goes out small gap of different shapes (20)；The both ends of metal layer (15) respectively with the transition transition line metal layer of printing
The connection of (10,11) and feeding microstrip line metal layer (12,13)；
C, interlayer plate (2) is located at the middle position of top layer dielectric-slab (1) and underlying dielectric plate (3)；
D, top layer dielectric-slab (1), periodical metallic vias (4) and metal patch (5) form perfect magnetic conductor (PMC) layer；
E, the width of underlying dielectric plate (3) and upper two layers dielectric-slab are of same size, but length is slightly longer, make transition transition line
(10,11) and feeding microstrip line (12,13) are in naked state；
F, three layers of dielectric-slab can be fixed together by bonding or screw.
The dielectric constant that the broad-band chip integrates the top layer dielectric-slab (1) of gap waveguide bandpass filter is higher than middle layer
The dielectric constant of dielectric-slab (2) and underlying dielectric plate (3), the dielectric constant phase of interlayer plate (2) and underlying dielectric plate (3)
Together；The loss angle tangent of interlayer plate (2) and underlying dielectric plate (3) is more demanding, loss angle tangent need to be selected as far as possible small
Dielectric-slab, the loss angle tangent of top layer dielectric-slab (1) is of less demanding, and the dielectric-slab bottom of cheap lossy may be selected；Top layer
The thickness of dielectric-slab (1) is greater than the thickness of interlayer plate (2)；Top layer dielectric-slab (1) and interlayer plate (2) length and
It is of same size.
The broad-band chip integrates gap waveguide bandpass filter, in each " class cross " gap column (7,8,9,
19) perimeter etch goes out small gap of different shapes (20), to enhance being electrically coupled for filter.
The broad-band chip integrates gap waveguide bandpass filter, and the PMC structure of formation filters cascade Chebyshev
Capacitor in parallel and inductance increase in each rank circuit of wave device, and Chebyshev filter is made to become elliptic filter, and keep it logical
Band two sides all have transmission zero, and attenuation outside a channel is more precipitous.
The broad-band chip integrates gap waveguide bandpass filter, increases the thickness of top layer dielectric-slab (1), can reduce
Bandwidth of operation；
The broad-band chip integrates gap waveguide bandpass filter, and the size for increasing metal circular patch (5) can make passband
The transmission zero on right side is moved to the left, and reduces bandwidth.
The broad-band chip integrates gap waveguide bandpass filter, by changing underlying dielectric plate (3) middle position
The diameter of periodical metallic vias (6) can change grounded inductors at different levels, realize the adjusting to the bandpass filter centre frequency,
Without influencing bandwidth of operation.
The broad-band chip integrates gap waveguide bandpass filter, two " class cross " in underlying dielectric plate (3)
Gap is arranged there are gap (18) between two " class cross " gaps of (7,8), and the length for adjusting gap (18) can eliminate this
The resonance problems with outer stopband of bandpass filter.
The broad-band chip integrates gap waveguide bandpass filter, top layer dielectric-slab (1), periodical metallic vias (4) and
Metal patch (5) forms perfect magnetic conductor (PMC) layer, effectively reduces space radiation loss, it is suppressed that plane wave solves simultaneously
The problem of air resonance.
The broad-band chip integrates gap waveguide bandpass filter, and the thickness of underlying dielectric plate (1) is situated between greater than middle layer
The thickness of scutum (2) contributes to form the band gap of covering filter working band.
The broad-band chip integrates gap waveguide bandpass filter, and interlayer plate (2) replaces unstable air
Gap ensures between upper layer and lower layer dielectric-slab (1,3) there is a stable clearance height.
The transition transition line metal layer (10,11) and feeding microstrip line metal layer (12,13) connecting with metal layer (15) make
The characteristic impedance that broad-band chip integrates gap waveguide bandpass filter keeps stablizing when frequency changes, convenient for integrated.
The width and upper two layers dielectric-slab of the underlying dielectric plate (3) are of same size, but length is slightly longer, makes transition gradual change
Line (10,11) and feeding microstrip line (12,13) are in naked state, in order to test.
Compared with the prior art, the invention has the following advantages:
1, there is wider passband in free transmission range；
2, radiation loss and plane wave in the substrate integral wave guide filter in traditional gap are solved the problems, such as；
3, stable structure, easy of integration, easy processing；
4, encapsulating structure makes filter passband two sides all have transmission zero；
5, encapsulating structure can adjust the bandwidth and transmission zero of filter.
Detailed description of the invention
Fig. 1 is the overall structure figure that broad-band chip of the present invention integrates gap waveguide bandpass filter.
Fig. 2 is the top layer dielectric-slab upper surface figure that broad-band chip of the present invention integrates gap waveguide bandpass filter.
Fig. 3 is the top layer dielectric-slab lower surface figure that broad-band chip of the present invention integrates gap waveguide bandpass filter.
Fig. 4 is the underlying dielectric plate upper surface figure that broad-band chip of the present invention integrates gap waveguide bandpass filter.
Fig. 5 is the underlying dielectric plate lower surface figure that broad-band chip of the present invention integrates gap waveguide bandpass filter.
Fig. 6 is that broad-band chip of the present invention integrates gap waveguide bandpass filter in the test of the S11 and S21 of 12-22 GHz
Figure.
Specific embodiment
Technical solution of the present invention is described in further detail With reference to embodiment.
As shown in figures 1 to 6, broad-band chip of the present invention integrates gap waveguide bandpass filter, comprising: top layer dielectric-slab (1),
Interlayer plate (2), underlying dielectric plate (3), in which:
A, three column period 1 property metallic vias (4) are equipped on top layer dielectric-slab (1), surface printing has metal layer (14) thereon,
Lower surface is printed with circular metal patch (5)；
B, the upper surface of underlying dielectric plate (3) is printed with metal layer (15), and lower surface is printed with metal layer (16)；Underlying dielectric plate
(3) both sides of the edge are equipped with Secondary periodicity metallic vias (17), and are equipped with third periodic metallic vias in middle position
(6)；" class cross " gap (21), every two " class cross " are provided on the upper surface metal layer (15) of underlying dielectric plate (3)
Gap constitutes " class cross " gap column；Two intermediate " class cross " gaps are classified as first group of " class cross " gap
It arranges (7,8), two " class cross " gaps on side are that second group of " class cross " gap arranges (9,19)；Each of first group
" class cross " gap column (7,8) are made of two spaced " class cross " gaps, second group each " class cross
Shape " gap column (9,19) are made of two continuous " class cross " gaps；Each " class cross " gap column (7,8,9,
19) symmetrical about y-axis and third periodic metallic vias (6)；In each " class cross " gap column (7,8,9,19)
Perimeter etch goes out small gap of different shapes (20)；The both ends of metal layer (15) respectively with the transition transition line metal layer of printing
The connection of (10,11) and feeding microstrip line metal layer (12,13)；
C, interlayer plate (2) is located at the middle position of top layer dielectric-slab (1) and underlying dielectric plate (3)；
D, top layer dielectric-slab (1), periodical metallic vias (4) and metal patch (5) form perfect magnetic conductor (PMC) layer；
E, the width of underlying dielectric plate (3) and upper two layers dielectric-slab are of same size, but length is slightly longer, make transition transition line
(10,11) and feeding microstrip line (12,13) are in naked state；
F, three layers of dielectric-slab can be fixed together by bonding or screw.
The dielectric constant that the broad-band chip integrates the top layer dielectric-slab (1) of gap waveguide bandpass filter is higher than middle layer
The dielectric constant of dielectric-slab (2) and underlying dielectric plate (3), the dielectric constant phase of interlayer plate (2) and underlying dielectric plate (3)
Together；The loss angle tangent of interlayer plate (2) and underlying dielectric plate (3) is more demanding, loss angle tangent need to be selected as far as possible small
Dielectric-slab, the loss angle tangent of top layer dielectric-slab (1) is of less demanding, and the dielectric-slab bottom of cheap lossy may be selected；Top layer
The thickness of dielectric-slab (1) is greater than the thickness of interlayer plate (2)；Top layer dielectric-slab (1) and interlayer plate (2) length and
It is of same size.
The broad-band chip integrates gap waveguide bandpass filter, in each " class cross " gap column (7,8,9,
19) perimeter etch goes out small gap of different shapes (20), to enhance being electrically coupled for filter.
The broad-band chip integrates gap waveguide bandpass filter, and the PMC structure of formation filters cascade Chebyshev
Capacitor in parallel and inductance increase in each rank circuit of wave device, and Chebyshev filter is made to become elliptic filter, and keep it logical
Band two sides all have transmission zero, and attenuation outside a channel is more precipitous.
The broad-band chip integrates gap waveguide bandpass filter, increases the thickness of top layer dielectric-slab (1), can reduce
Bandwidth of operation；
The broad-band chip integrates gap waveguide bandpass filter, and the size for increasing metal circular patch (5) can make passband
The transmission zero on right side is moved to the left, and reduces bandwidth.
The broad-band chip integrates gap waveguide bandpass filter, by changing underlying dielectric plate (3) middle position
The diameter of periodical metallic vias (6) can change grounded inductors at different levels, realize the adjusting to the bandpass filter centre frequency,
Without influencing bandwidth of operation.
The broad-band chip integrates gap waveguide bandpass filter, two " class cross " in underlying dielectric plate (3)
Gap is arranged there are gap (18) between two " class cross " gaps of (7,8), and the length for adjusting gap (18) can eliminate this
The resonance problems with outer stopband of bandpass filter.
The broad-band chip integrates gap waveguide bandpass filter, top layer dielectric-slab (1), periodical metallic vias (4) and
Metal patch (5) forms perfect magnetic conductor (PMC) layer, effectively reduces space radiation loss, it is suppressed that plane wave solves simultaneously
The problem of air resonance.
The broad-band chip integrates gap waveguide bandpass filter, and the thickness of underlying dielectric plate (1) is situated between greater than middle layer
The thickness of scutum (2) contributes to form the band gap of covering filter working band.
The broad-band chip integrates gap waveguide bandpass filter, and interlayer plate (2) replaces unstable air
Gap ensures between upper layer and lower layer dielectric-slab (1,3) there is a stable clearance height.
The transition transition line metal layer (10,11) and feeding microstrip line metal layer (12,13) connecting with metal layer (15) make
The characteristic impedance that broad-band chip integrates gap waveguide bandpass filter keeps stablizing when frequency changes, convenient for integrated.
The width and upper two layers dielectric-slab of the underlying dielectric plate (3) are of same size, but length is slightly longer, makes transition gradual change
Line (10,11) and feeding microstrip line (12,13) are in naked state, in order to test.
In case study on implementation of the present invention, top layer dielectric-slab (1) uses dielectric constant for 4.6, loss angle tangent 0.02, thickness
The FR4 dielectric material of 1.6mm；Interlayer plate (2) uses dielectric constant for 3.36, loss angle tangent 0.0027, thickness
The Rogers dielectric material of 0.304mm；Underlying dielectric plate (3) uses dielectric constant for 3.36, loss angle tangent 0.0027, thickness
Spend the Rogers dielectric material of 0.508mm；Filter overall dimensions are 14.6mm*29.2mm*2.412mm.Result shown in fig. 6
Show that filter centre frequency of the invention is 17.2GHz, bandwidth of operation is 6 GHz, and transmission zero is located at 12.46
GHz and 20.96 GHz；PMC structure makes filter have wide stopband, and the decaying at 1.76 times of centre frequency is still small
In -30dB.
Filter of the invention is that the broad-band chip that a kind of size is small, structure is simple, transmission performance is good integrates gap waveguide
Bandpass filter.
Better embodiment of the invention is explained in detail above, but the present invention is not limited to above-mentioned embodiment party
Formula within the knowledge of one of ordinary skill in the art can also be without departing from the purpose of the present invention
It makes a variety of changes.
Claims (10)
1. broad-band chip integrates gap waveguide bandpass filter, comprising: top layer dielectric-slab (1), interlayer plate (2), bottom
Dielectric-slab (3), in which:
Three column period 1 property metallic vias (4) are equipped on top layer dielectric-slab (1), surface printing has metal layer (14) thereon, under
Surface printing has circular metal patch (5)；
The upper surface of underlying dielectric plate (3) is printed with metal layer (15), and lower surface is printed with metal layer (16)；Underlying dielectric plate
(3) both sides of the edge are equipped with Secondary periodicity metallic vias (17), and are equipped with third periodic metallic vias in middle position
(6)；" class cross " gap (21), every two " class cross " are provided on the upper surface metal layer (15) of underlying dielectric plate (3)
Gap constitutes " class cross " gap column；Two intermediate " class cross " gaps are classified as first group of " class cross " gap
It arranges (7,8), two " class cross " gaps on side are that second group of " class cross " gap arranges (9,19)；Each of first group
" class cross " gap column (7,8) are made of two spaced " class cross " gaps, second group each " class cross
Shape " gap column (9,19) are made of two continuous " class cross " gaps；Each " class cross " gap column (7,8,9,
19) symmetrical about y-axis and third periodic metallic vias (6)；In each " class cross " gap column (7,8,9,19)
Perimeter etch goes out small gap of different shapes (20)；The both ends of metal layer (15) respectively with the transition transition line metal layer of printing
The connection of (10,11) and feeding microstrip line metal layer (12,13)；
Interlayer plate (2) is located at the middle position of top layer dielectric-slab (1) and underlying dielectric plate (3)；
Top layer dielectric-slab (1), periodical metallic vias (4) and metal patch (5) form perfect magnetic conductor (PMC) layer；
The width and upper two layers dielectric-slab of underlying dielectric plate (3) are of same size, but length is slightly longer, make transition transition line (10,
11) and feeding microstrip line (12,13) are in naked state；
Three layers of dielectric-slab can be fixed together by bonding or screw.
2. broad-band chip according to claim 1 integrates gap waveguide bandpass filter, it is characterised in that: the broadband
The dielectric constant that substrate integrates the top layer dielectric-slab (1) of gap waveguide bandpass filter is higher than interlayer plate (2) and bottom
The dielectric constant of dielectric-slab (3), interlayer plate (2) are identical with the dielectric constant of underlying dielectric plate (3)；Interlayer plate
(2) and the loss angle tangent of underlying dielectric plate (3) is more demanding, the dielectric-slab that loss angle tangent need to be selected as far as possible small, and top layer is situated between
The loss angle tangent of scutum (1) is of less demanding, and the dielectric-slab bottom of cheap lossy may be selected；The thickness of top layer dielectric-slab (1)
Greater than the thickness of interlayer plate (2)；Top layer dielectric-slab (1) is identical as interlayer plate (2) length and width.
3. broad-band chip according to claim 1 integrates gap waveguide bandpass filter, it is characterised in that: the width
Band substrate integrates gap waveguide bandpass filter, goes out not in the perimeter etch of each " class cross " gap column (7,8,9,19)
The small gap (20) of similar shape, to enhance being electrically coupled for filter.
4. broad-band chip according to claim 1 integrates gap waveguide bandpass filter, it is characterised in that: the width
Band substrate integrates gap waveguide bandpass filter, and the PMC structure of formation makes in each rank circuit of cascade Chebyshev filter
Capacitor and inductance in parallel increases, and so that Chebyshev filter is become elliptic filter, and its passband two sides is made all to have transmission
Zero point, attenuation outside a channel are more precipitous.
5. broad-band chip according to claim 1 integrates gap waveguide bandpass filter, it is characterised in that: the width
Band substrate integrates gap waveguide bandpass filter, increases the thickness of top layer dielectric-slab (1), can reduce bandwidth of operation.
6. broad-band chip according to claim 1 integrates gap waveguide bandpass filter, it is characterised in that: the width
Band substrate integrates gap waveguide bandpass filter, and the size for increasing metal circular patch (5) can make the transmission zero on the right side of passband
Point is moved to the left, and reduces bandwidth.
7. broad-band chip according to claim 1 integrates gap waveguide bandpass filter, it is characterised in that: the width
Band substrate integrates gap waveguide bandpass filter, by the periodical metallic vias (6) for changing underlying dielectric plate (3) middle position
Diameter can change grounded inductors at different levels, the adjusting to the bandpass filter centre frequency is realized, without influencing bandwidth of operation.
8. broad-band chip according to claim 1 integrates gap waveguide bandpass filter, it is characterised in that: the width
Band substrate integrates gap waveguide bandpass filter, and two of two " class cross " gaps column (7,8) in underlying dielectric plate (3)
There are gap (18) between " class cross " gap, the length for adjusting gap (18) can eliminate the band extrernal resistance of the bandpass filter
The resonance problems of band.
9. broad-band chip according to claim 1 integrates gap waveguide bandpass filter, it is characterised in that: the broadband
Substrate integrates gap waveguide bandpass filter, top layer dielectric-slab (1), periodical metallic vias (4) and metal patch (5) composition reason
Think magnetic conductor (PMC) layer, effectively reduces space radiation loss, it is suppressed that plane wave, while solving the problems, such as air resonance.
10. broad-band chip according to claim 1 integrates gap waveguide bandpass filter, it is characterised in that: described
Broad-band chip integrates gap waveguide bandpass filter, and the thickness of underlying dielectric plate (1) is greater than the thickness of interlayer plate (2),
Contribute to form the band gap of covering filter working band.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811350743.6A CN109361040A (en) | 2018-11-14 | 2018-11-14 | Broad-band chip integrates gap waveguide bandpass filter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811350743.6A CN109361040A (en) | 2018-11-14 | 2018-11-14 | Broad-band chip integrates gap waveguide bandpass filter |
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| CN109361040A true CN109361040A (en) | 2019-02-19 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950693A (en) * | 2019-04-12 | 2019-06-28 | 云南大学 | Integral substrate gap waveguide circular polarisation gap traveling-wave array antenna |
| CN109994806A (en) * | 2019-04-22 | 2019-07-09 | 云南大学 | ISGW wideband bandpass filter with dual transfer zero and Wide stop bands |
| CN110071349A (en) * | 2019-05-09 | 2019-07-30 | 云南大学 | Ultra wide band SIW bandpass filter |
| CN110085955A (en) * | 2019-05-09 | 2019-08-02 | 云南大学 | Ultra wide band ISGW bandpass filter |
| CN112713372A (en) * | 2020-12-29 | 2021-04-27 | 南京邮电大学 | Filter based on printed ridge gap waveguide technology |
| CN113964535A (en) * | 2021-10-22 | 2022-01-21 | 云南大学 | Circular polarization filter antenna based on integrated substrate gap waveguide |
-
2018
- 2018-11-14 CN CN201811350743.6A patent/CN109361040A/en not_active Withdrawn
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950693A (en) * | 2019-04-12 | 2019-06-28 | 云南大学 | Integral substrate gap waveguide circular polarisation gap traveling-wave array antenna |
| CN109950693B (en) * | 2019-04-12 | 2023-10-27 | 云南大学 | Integrated substrate gap waveguide circular polarization gap traveling wave array antenna |
| CN109994806A (en) * | 2019-04-22 | 2019-07-09 | 云南大学 | ISGW wideband bandpass filter with dual transfer zero and Wide stop bands |
| CN109994806B (en) * | 2019-04-22 | 2023-12-15 | 云南大学 | ISGW broadband band-pass filter with double transmission zero points and wide stop band |
| CN110071349A (en) * | 2019-05-09 | 2019-07-30 | 云南大学 | Ultra wide band SIW bandpass filter |
| CN110085955A (en) * | 2019-05-09 | 2019-08-02 | 云南大学 | Ultra wide band ISGW bandpass filter |
| CN110071349B (en) * | 2019-05-09 | 2023-12-22 | 云南大学 | Ultra-wideband SIW band-pass filter |
| CN110085955B (en) * | 2019-05-09 | 2023-12-22 | 云南大学 | Ultra-wideband ISGW band-pass filter |
| CN112713372A (en) * | 2020-12-29 | 2021-04-27 | 南京邮电大学 | Filter based on printed ridge gap waveguide technology |
| CN113964535A (en) * | 2021-10-22 | 2022-01-21 | 云南大学 | Circular polarization filter antenna based on integrated substrate gap waveguide |
| CN113964535B (en) * | 2021-10-22 | 2023-12-05 | 云南大学 | Circularly polarized filter antenna based on integrated substrate gap waveguide |
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Application publication date: 20190219 |