CN209401806U - A kind of integrated gap waveguide bandpass filter of novel substrate - Google Patents
A kind of integrated gap waveguide bandpass filter of novel substrate Download PDFInfo
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- CN209401806U CN209401806U CN201820955069.3U CN201820955069U CN209401806U CN 209401806 U CN209401806 U CN 209401806U CN 201820955069 U CN201820955069 U CN 201820955069U CN 209401806 U CN209401806 U CN 209401806U
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- 239000000758 substrate Substances 0.000 title claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 230000007704 transition Effects 0.000 claims abstract description 19
- 230000000737 periodic effect Effects 0.000 claims abstract description 7
- 238000007639 printing Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 90
- 239000011229 interlayer Substances 0.000 claims description 25
- 230000005540 biological transmission Effects 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 5
- 238000012360 testing method Methods 0.000 claims description 5
- 238000003854 Surface Print Methods 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 5
- 238000013461 design Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013332 literature search Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
The utility model relates to a kind of novel substrates to integrate gap waveguide bandpass filter structures, which is bonded by three layers of dielectric-slab.The upper surface of top layer dielectric-slab is printed with metal layer, and lower surface is printed with circular metal patch, is equipped with periodical metallic vias in top layer dielectric-slab, is printing circular metal patch immediately below via hole；Underlying dielectric plate upper surface is printed with metal layer, metal layer both ends, which are taken over, crosses transition line and feeding microstrip line, one group of two column totally three groups of rectangular apertures are provided on metal layer, wherein one group is continuous gap, in addition two groups each rectangular aperture is separated into two small gaps by metal layer gap；Underlying dielectric plate lower surface is printed with ground metal layer；Underlying dielectric plate two sides and middle position are equipped with periodic metallic vias respectively.The utility model realizes highly selective band filter, solves the problems, such as that there are radiation losses and plane wave in conventional filter, while having many advantages, such as stable structure.
Description
Technical field
The utility model relates to electronic technology fields, and in particular to a kind of integrated gap waveguide bandpass filtering of novel substrate
Device structure.
Background technique
With the development of wireless communication technique, the growing tension in short supply highlighted of frequency spectrum resource, microwave band-pass filter exists
Status therein is all the more important.Since entire wireless communication system develops towards high-performance direction, this is to filter in system
More stringent requirements are proposed for performance.
Substrate integration wave-guide (Substrate Integrated Waveguide, SIW) is by medium substrate, upper and lower metal
The class waveguiding structure that face, plated-through hole form, while also having small in size, low cost, excellent spy easy to process and integrated concurrently
Property, this makes it be used widely in the design of filter.In the design of SIW filter, metal covering is descended to crack on it
Gap is to form the important method that stopband is the design of its filter.But this SIW filter cannot effectively inhibit space spoke
It penetrates and plane wave.The integrated gap waveguide of the substrate being recently proposed (Substrate Integrated Gap Waveguide,
SIGW it) is used to encapsulation microwave circuit, restrained effectively space radiation and surface wave.Also, SIGW, which has, to be simple to manufacture, damages
Consume that low, stable structure, transmission performance be good and the wider characteristic of bandwidth of operation.
The utility model realizes seven rank bandpass filters of self encapsulation using SIGW, can not only space be inhibited to radiate
And plane wave, and help to realize high Out-of-band rejection and improve pass band transfer performance.By the way that SIGW structure is added, make to cascade
Increase capacitor and inductance in parallel in each rank circuit of filter.To make Chebyshev filter become elliptic filter, and
Make its passband two sides that all there is transmission zero (Transmission Zero, TZ), attenuation outside a channel is more precipitous.
The content of the present invention has no open report identical with the utility model by literature search.
Summary of the invention
The purpose of the utility model is to overcome the deficiencies of the prior art, design highly selective SIW bandpass filter knot
Structure.
The novel substrate of this practical one kind integrates gap waveguide bandpass filter, comprising: top layer dielectric-slab (1), middle layer
Dielectric-slab (2), underlying dielectric plate (3), in which:
A, the metallic vias (4) of three column period 1 property is equipped on top layer dielectric-slab (1), surface printing has metal layer thereon
(19), lower surface is printed with the first round circular metal patch (5) and the second round circular metal patch (6)；
B, interlayer plate (2) is located at the middle position of top layer dielectric-slab (1) and underlying dielectric plate (3)；
C, the upper surface of underlying dielectric plate (3) is printed with the first metal layer (18), and lower surface is printed with second metal layer
(20)；The two sides of underlying dielectric plate (3) are equipped with the metallic vias (7) of Secondary periodicity, and are equipped with the period 3 in middle position
The metallic vias (8) of property；First group of rectangular aperture (9), second group of rectangular aperture are provided on upper surface the first metal layer (18)
(10) and third group rectangular aperture (11), every group is all two column gaps, and every group of rectangular aperture (9,10,11) is respectively two passes
It is symmetrical in y-axis, and it is parallel to the rectangular aperture of X-axis；First group of rectangular aperture (9) is continuous gap, but second group of rectangular aperture
(10) and the not continuous gap in each gap of third group rectangular aperture (11), printed metal layer gap (12,
13) the identical small gap of two sizes separated；The both ends of the first metal layer (18) respectively with the transition transition line metal of printing
Layer (14,16) and feeding microstrip line metal layer (15,17) connection；
D, top layer dielectric-slab (1) dielectric constant of the highly selective SIW bandpass filter structures is higher than interlayer
Plate (2) and underlying dielectric plate (3), interlayer plate (2) is identical with the dielectric constant of underlying dielectric plate (3), three layers of dielectric-slab
Two layers of dielectric-slab can be fixed together by bonding or screw；The top layer dielectric-slab (1) and interlayer plate (2) length and
It is of same size；
E, underlying dielectric plate (3) width and upper two layers dielectric-slab of the highly selective SIW bandpass filter structures are wide
Spend identical, but length is slightly longer, and transition transition line metal layer (14,16) and feeding microstrip line metal layer (15,17) is made to be in exposed
State, in order to test.
Highly selective SIW bandpass filter structures as described above, top layer dielectric-slab (1), interlayer plate (2), the
One periodic metallic vias (4) and the first circular metal patch (5) and the second circular metal patch (6) form perfect magnetic conductor
(Perfect Magnetic Conductor, PMC) layer, effectively reduces space radiation loss, it is suppressed that plane wave solves simultaneously
Determined air resonance the problem of.
The thickness of highly selective SIW bandpass filter structures as described above, underlying dielectric plate (1) is higher than interlayer
The thickness of plate (2) contributes to form the band gap of covering filter working band.
Highly selective SIW bandpass filter structures as described above, the PMC structure in bandpass filter make cascade to cut ratio
It avenges capacitor and inductance in parallel in each rank circuit of husband's filter to increase, so that Chebyshev filter be made to become oval filtering
Device, and make its passband two sides that all there is transmission zero, attenuation outside a channel is more precipitous.
Highly selective SIW bandpass filter structures as described above, increase the thickness of top layer dielectric-slab (1), can reduce
Bandwidth of operation.
Highly selective SIW bandpass filter structures as described above, the size for increasing metal circular patch (5,6) can make
Transmission zero on the right side of passband is mobile to passband side and reduces the bandwidth of passband, but the shadow of metal circular patch (5) size
Sound is larger.
Highly selective SIW bandpass filter structures as described above, interlayer plate (2) replace between unstable air
Gap ensures between upper layer and lower layer dielectric-slab (1,3) there is a stable clearance height.
Highly selective SIW bandpass filter structures as described above, by change underlying dielectric plate (3) middle position the
The diameter of three periodic metallic vias (8) is to change grounded inductors at different levels to realize to the bandpass filter centre frequency
It adjusts, without influencing bandwidth of operation.
Highly selective SIW bandpass filter structures as described above, the rectangular aperture (10,11) in underlying dielectric plate (3)
Between there are gap (12,13), the length of suitably adjustment gap (12,13) can eliminate the bandpass filter with outer stopband
Resonance problems.
Connect with the first metal layer (18) transition transition line metal layer (14,16) and feeding microstrip line metal layer (15,
17) characteristic impedance of highly selective SIW bandpass filter is made to keep stablizing in frequency variation, convenient for integrated.
Highly selective SIW bandpass filter structures as described above, interlayer plate (2) and underlying dielectric plate (3)
Loss angle tangent is more demanding, the dielectric-slab that loss angle tangent need to be selected as far as possible small, but just to the loss angle of top layer dielectric-slab (1)
It cuts of less demanding, the dielectric-slab of cheaper lossy may be selected, to reduce cost.
The utility model compared with prior art, has the advantages that
1, radiation loss and plane wave in the substrate integral wave guide filter in traditional gap are solved the problems, such as；
2, stable structure, easy of integration, easy processing；
3, encapsulating structure makes filter passband two sides all have transmission zero；
4, encapsulating structure can adjust the bandwidth and transmission zero of filter.
Detailed description of the invention
Fig. 1 is the overall structure figure that the novel substrate of this practical one kind integrates gap waveguide bandpass filter.
Fig. 2 is the top layer dielectric-slab upper surface figure that the novel substrate of this practical one kind integrates gap waveguide bandpass filter.
Fig. 3 is the top layer dielectric-slab lower surface figure that the novel substrate of this practical one kind integrates gap waveguide bandpass filter.
Fig. 4 is the underlying dielectric plate upper surface figure that the novel substrate of this practical one kind integrates gap waveguide bandpass filter.
Fig. 5 is the underlying dielectric plate lower surface figure that the novel substrate of this practical one kind integrates gap waveguide bandpass filter.
Fig. 6 is that the novel substrate of this practical one kind integrates gap waveguide bandpass filter in the S11 and S21 of 13-30GHz
Test chart.
Specific embodiment
The technical solution of the utility model is described in further detail With reference to embodiment.
As shown in figures 1 to 6, the novel substrate of this practical one kind integrates gap waveguide bandpass filter, comprising: top layer medium
Plate (1), interlayer plate (2), underlying dielectric plate (3), in which:
A, the metallic vias (4) of three column period 1 property is equipped on top layer dielectric-slab (1), surface printing has metal layer thereon
(19), lower surface is printed with the first round circular metal patch (5) and the second round circular metal patch (6)；
B, interlayer plate (2) is located at the middle position of top layer dielectric-slab (1) and underlying dielectric plate (3)；
C, the upper surface of underlying dielectric plate (3) is printed with the first metal layer (18), and lower surface is printed with second metal layer
(20)；The two sides of underlying dielectric plate (3) are equipped with the metallic vias (7) of Secondary periodicity, and are equipped with the period 3 in middle position
The metallic vias (8) of property；First group of rectangular aperture (9), second group of rectangular aperture are provided on upper surface the first metal layer (18)
(10) and third group rectangular aperture (11), every group is all two column gaps, and every group of rectangular aperture (9,10,11) is respectively two passes
It is symmetrical in y-axis, and it is parallel to the rectangular aperture of X-axis；First group of rectangular aperture (9) is continuous gap, but second group of rectangular aperture
(10) and the not continuous gap in each gap of third group rectangular aperture (11), printed metal layer gap (12,
13) the identical small gap of two sizes separated；The both ends of the first metal layer (18) respectively with the transition transition line metal of printing
Layer (14,16) and feeding microstrip line metal layer (15,17) connection；
D, top layer dielectric-slab (1) dielectric constant of the highly selective SIW bandpass filter structures is higher than interlayer
Plate (2) and underlying dielectric plate (3), interlayer plate (2) is identical with the dielectric constant of underlying dielectric plate (3), three layers of dielectric-slab
Two layers of dielectric-slab can be fixed together by bonding or screw；The top layer dielectric-slab (1) and interlayer plate (2) length and
It is of same size；
E, underlying dielectric plate (3) width and upper two layers dielectric-slab of the highly selective SIW bandpass filter structures are wide
Spend identical, but length is slightly longer, and transition transition line metal layer (14,16) and feeding microstrip line metal layer (15,17) is made to be in exposed
State, in order to test.
Highly selective SIW bandpass filter structures as described above, top layer dielectric-slab (1), interlayer plate (2), the
One periodic metallic vias (4) and the first circular metal patch (5) and the second circular metal patch (6) form perfect magnetic conductor
(Perfect Magnetic Conductor, PMC) layer, effectively reduces space radiation loss, it is suppressed that plane wave solves simultaneously
Determined air resonance the problem of.
The thickness of highly selective SIW bandpass filter structures as described above, underlying dielectric plate (1) is higher than interlayer
The thickness of plate (2) contributes to form the band gap of covering filter working band.
Highly selective SIW bandpass filter structures as described above, the PMC structure in bandpass filter make cascade to cut ratio
It avenges capacitor and inductance in parallel in each rank circuit of husband's filter to increase, so that Chebyshev filter be made to become oval filtering
Device, and make its passband two sides that all there is transmission zero, attenuation outside a channel is more precipitous.
Highly selective SIW bandpass filter structures as described above, increase the thickness of top layer dielectric-slab (1), can reduce
Bandwidth of operation.
Highly selective SIW bandpass filter structures as described above, the size for increasing metal circular patch (5,6) can make
Transmission zero on the right side of passband is mobile to passband side and reduces the bandwidth of passband, but the shadow of metal circular patch (5) size
Sound is larger.
Highly selective SIW bandpass filter structures as described above, interlayer plate (2) replace between unstable air
Gap ensures between upper layer and lower layer dielectric-slab (1,3) there is a stable clearance height；
Highly selective SIW bandpass filter structures as described above, by change underlying dielectric plate (3) middle position the
The diameter of three periodic metallic vias (8) is to change grounded inductors at different levels to realize to the bandpass filter centre frequency
It adjusts, without influencing bandwidth of operation.
Highly selective SIW bandpass filter structures as described above, the rectangular aperture (10,11) in underlying dielectric plate (3)
Between there are gap (12,13), the length of suitably adjustment gap (12,13) can eliminate the bandpass filter with outer stopband
Resonance problems.
Connect with the first metal layer (18) transition transition line metal layer (14,16) and feeding microstrip line metal layer (15,
17) characteristic impedance of highly selective SIW bandpass filter is made to keep stablizing in frequency variation, convenient for integrated；As described above
Highly selective SIW bandpass filter structures, the PMC structure in bandpass filter can make filter have wide stopband, in
Decaying at 1.76 times of frequency of heart is still less than -30dB.
Highly selective SIW bandpass filter structures as described above, interlayer plate (2) and underlying dielectric plate (3)
Loss angle tangent is more demanding, the dielectric-slab that loss angle tangent need to be selected as far as possible small, but just to the loss angle of top layer dielectric-slab (1)
It cuts of less demanding, the dielectric-slab of cheaper lossy may be selected, to reduce cost.
The FR4_epoxy that top layer dielectric-slab (1) as described above uses dielectric constant to be 0.02 for 4.6, loss angle tangent is situated between
Material, having a size of 12.6mm*31.8mm*1.2mm；Interlayer plate (2) uses dielectric constant for 3.36, loss angle tangent
For 0.0027 Rogers 4003C dielectric material, having a size of 12.6mm*31.8mm*0.203mm；Underlying dielectric plate (3) uses
The Rogers 4003C dielectric material that dielectric constant is 3.36, loss angle tangent is 0.0027, having a size of 12.6mm*34.6mm*
0.508mm。
Test result shown in fig. 6 shows that the filter centre frequency of the utility model is 16.8GHz, and bandwidth of operation is
2.8GHz, transmission zero is located at 14.9GHz and 19.4GHz, and stopband reaches at 29GHz；The filtering of the utility model
Device is the highly selective SIW bandpass filter that a kind of size is small, structure is simple, transmission performance is good.
The better embodiment of the utility model is explained in detail above, but the utility model be not limited to it is above-mentioned
Embodiment can also not depart from the utility model ancestor within the knowledge of one of ordinary skill in the art
It is made a variety of changes under the premise of purport.
Claims (14)
1. a kind of novel substrate integrates gap waveguide bandpass filter characterized by comprising top layer dielectric-slab (1), it is intermediate
Layer dielectric-slab (2), underlying dielectric plate (3), in which:
A, the metallic vias (4) of three column period 1 property is equipped on top layer dielectric-slab (1), surface printing has metal layer thereon
(19), lower surface is printed with the first circular metal patch (5) and the second circular metal patch (6)；
B, interlayer plate (2) is located at the middle position of top layer dielectric-slab (1) and underlying dielectric plate (3)；
C, the upper surface of underlying dielectric plate (3) is printed with the first metal layer (18), and lower surface is printed with second metal layer (20)；Bottom
The two sides of layer dielectric-slab (3) are equipped with the metallic vias (7) of Secondary periodicity, and are equipped with the metal of third periodic in middle position
Via hole (8)；First group of rectangular aperture (9), second group of rectangular aperture (10) and third are provided on upper surface the first metal layer (18)
Group rectangular aperture (11), every group is all two column gaps, and every group of rectangular aperture (9,10,11) is respectively two symmetrical about y-axis, and
It is parallel to the rectangular aperture of X-axis；First group of rectangular aperture (9) is continuous gap, but second group of rectangular aperture (10) and third group
The not continuous gap in each gap of rectangular aperture (11), separate two of printed metal layer gap (12,13)
The identical small gap of size；The both ends of the first metal layer (18) respectively with the transition transition line metal layer (14,16) of printing and feedback
Electric microstrip line metal layer (15,17) connection.
2. the novel substrate of one kind according to claim 1 integrates gap waveguide bandpass filter, it is characterised in that: described
Top layer dielectric-slab (1) dielectric constant that a kind of novel substrate integrates gap waveguide bandpass filter structures is higher than interlayer
Plate (2) and underlying dielectric plate (3), interlayer plate (2) is identical with the dielectric constant of underlying dielectric plate (3), three layers of dielectric-slab
Two layers of dielectric-slab can be fixed together by bonding or screw；The top layer dielectric-slab (1) and interlayer plate (2) length and
It is of same size.
3. the novel substrate of one kind according to claim 1 integrates gap waveguide bandpass filter, it is characterised in that: described
A kind of width and upper two layers dielectric-slab of the underlying dielectric plate (3) of the integrated gap waveguide bandpass filter structures of novel substrate
It is of same size, but length is slightly longer, and transition transition line metal layer (14,16) and feeding microstrip line metal layer (15,17) is made to be in naked
Dewiness state, in order to test.
4. the novel substrate of one kind according to claim 1 integrates gap waveguide bandpass filter, which is characterized in that top layer
Dielectric-slab (1), interlayer plate (2), the metallic vias (4) of period 1 property and the first circular metal patch (5) and second
Circular metal patch (6) forms perfect magnetic conductor (Perfect Magnetic Conductor, PMC) layer.
5. the novel substrate of one kind according to claim 1 integrates gap waveguide bandpass filter, it is characterised in that: according to
The novel substrate of one kind described in claim 1 integrates gap waveguide bandpass filter structures, and the thickness of underlying dielectric plate (3) is high
Thickness in interlayer plate (2).
6. the novel substrate of one kind according to claim 1 integrates gap waveguide bandpass filter, which is characterized in that increase
The thickness of top layer dielectric-slab (1), can reduce bandwidth of operation.
7. the novel substrate of one kind according to claim 1 integrates gap waveguide bandpass filter, increase by the first round gold
The size for belonging to patch (5) and the second circular metal patch (6) can make the transmission zero on the right side of passband mobile to passband side, make
The bandwidth of passband reduces, and metal circular patch (5) size is affected.
8. the novel substrate of one kind according to claim 1 integrates gap waveguide bandpass filter, which is characterized in that intermediate
Layer dielectric-slab (2), which ensures between upper layer and lower layer dielectric-slab (1,3), a stable clearance height.
9. the novel substrate of one kind according to claim 1 integrates gap waveguide bandpass filter, which is characterized in that pass through
Change underlying dielectric plate (3) middle position third periodic metallic vias (8) diameter with change grounded inductors at different levels from
And realize the adjusting to the bandpass filter centre frequency, without influencing bandwidth of operation.
10. the novel substrate of one kind according to claim 1 integrates gap waveguide bandpass filter, which is characterized in that bottom
There are gap (12,13) between rectangular aperture (10,11) in layer dielectric-slab (3), suitably adjust the length of gap (12,13)
The resonance problems with outer stopband of the bandpass filter can be eliminated.
11. the novel substrate of one kind according to claim 1 integrates gap waveguide bandpass filter, which is characterized in that with
The transition transition line metal layer (14,16) and feeding microstrip line metal layer (15,17) of the first metal layer (18) connection make novel
The characteristic impedance that substrate integrates gap waveguide bandpass filter keeps stablizing when frequency changes, convenient for integrated.
12. the novel substrate of one kind according to claim 1 integrates gap waveguide bandpass filter, which is characterized in that in
The loss angle tangent of interbed dielectric-slab (2) and underlying dielectric plate (3) is more demanding, the medium that loss angle tangent need to be selected as far as possible small
Plate, but it is of less demanding to the loss angle tangent of top layer dielectric-slab (1), the dielectric-slab of cheaper lossy may be selected, to reduce
Cost.
13. the novel substrate of one kind according to claim 1 integrates gap waveguide bandpass filter, it is characterised in that: band
Bandpass filter is elliptic filter, and there are transmission zero in passband two sides, and attenuation outside a channel is more precipitous.
14. the novel substrate of one kind according to claim 1 integrates gap waveguide bandpass filter, it is characterised in that: institute
The top layer dielectric-slab (1) stated uses the FR4_epoxy dielectric material that dielectric constant is 0.02 for 4.6, loss angle tangent, having a size of
12.6mm*31.8mm*1.2mm；It for 3.36, loss angle tangent is 0.0027 that interlayer plate (2), which uses dielectric constant,
Rogers 4003C dielectric material, having a size of 12.6mm*31.8mm*0.203mm；Underlying dielectric plate (3) use dielectric constant for
3.36, the Rogers 4003C dielectric material that loss angle tangent is 0.0027, having a size of 12.6mm*34.6mm*0.508m.
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| CN201820955069.3U CN209401806U (en) | 2018-06-21 | 2018-06-21 | A kind of integrated gap waveguide bandpass filter of novel substrate |
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| CN201820955069.3U CN209401806U (en) | 2018-06-21 | 2018-06-21 | A kind of integrated gap waveguide bandpass filter of novel substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108923104A (en) * | 2018-06-21 | 2018-11-30 | 云南大学 | Highly selective substrate integrates gap waveguide bandpass filter |
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2018
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108923104A (en) * | 2018-06-21 | 2018-11-30 | 云南大学 | Highly selective substrate integrates gap waveguide bandpass filter |
| CN108923104B (en) * | 2018-06-21 | 2024-04-19 | 云南大学 | High-selectivity substrate integrated gap waveguide band-pass filter |
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