CN109216838A - Improved defect ground structure low-pass filter - Google Patents
Improved defect ground structure low-pass filter Download PDFInfo
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- CN109216838A CN109216838A CN201811085973.4A CN201811085973A CN109216838A CN 109216838 A CN109216838 A CN 109216838A CN 201811085973 A CN201811085973 A CN 201811085973A CN 109216838 A CN109216838 A CN 109216838A
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- defect ground
- ground structure
- low
- pass filter
- medium substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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- Electromagnetism (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention discloses a kind of improved defect ground structure low-pass filters.Present invention employs two special rank Stepped Impedance structural units, the Stepped Impedance unit connects the tactic pattern of hexagonal structure unit using narrow rectangle, the length of Stepped Impedance structural unit can be shortened in the case where not reducing load Q, there are very big freedom degree, the miniaturization of microwave device easy to accomplish in structure and design.In addition, present invention optimizes the defect ground structure of bottom, change can substrate material effective dielectric constant distribution, and then influence the current distribution of earth plate and the transmission characteristic of microstrip transmission line.This defect ground structure of invention passes through the high impedance band width and Out-of-band rejection intensity for improving low-pass filter, to improve the low-frequency filter characteristics of low-pass filter.Moreover, this defect ground structure, relatively simple for structure, the advantages of being convenient for Electromagnetic Field Analysis and equivalent circuit modeling analysis, be more suitable for integrated circuit practical application.
Description
Technical field
The invention belongs to microwave technical field, especially a kind of defect ground structure low-pass filter.
Background technique
With the development of modern communications technology, market to the efficiency of communication apparatus and it is jamproof require it is higher and higher,
Also the research to high performance microwave device has been caused accordingly.Low-pass filter is able to suppress harmonic signal and interference signal, is
Communication system provides suitable bandwidth of operation.Traditional low-pass filter structure size is big, poor selectivity, and Out-of-band rejection ability
It is not strong, it is difficult to inhibit interference signal and higher hamonic wave signal.By research in recent years, photonic band gap structure is proposed in the world
(PBG, Photonic Bandgap), the cascade structure of Stepped Impedance, adjustable filter construction and electromagnetic bandgap structure
A series of new structures such as (EBG, Electromagnetic Bandgap) solves above-mentioned these problems.Although these are tied
Structure has some improvement to the pass band width of filter and with external impedance inhibition, and still, the design and processing of these structures compare
Complexity, promotion and application difficulty in engineering are larger.
Defect ground structure (DGS, Defected Ground Structure) is similar with electromagnetic bandgap structure, all passes through
Etching defect figure is distributed on the earth plate of microstrip line to change the effective dielectric constant of substrate material, and then influences earth plate
Current distribution and microstrip transmission line transmission characteristic.EBG structure needs loading cycle structure, and Modeling and Design and processing are compared
Complexity is not easy to minimize.And the band-stop response parameter of EBG structure is easy to be influenced by a variety of conditions, so the microwave of EBG structure
Device performance is also unstable.There is the microstrip line of DGS structure band-stop response and slow wave characteristic to compare with EBG, and DGS structure is not required to
Periodic structure is wanted, structure is relatively easy.Moreover, the equivalent circuit and magnetic distribution of DGS structure microstrip line are also easier to build
Mould analysis, convenient for design, processing and application, it is easier to realize the miniaturization of microwave device and radio circuit.Therefore, novel defect
The development of ground structure microwave components design technology has urgent demand to integrated microwave circuit system is minimized.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of improved defect ground structure low-pass filters, it has easy
The advantages that integrated, compact dimensions, design is simple, at low cost.Convenient for being machined and producing in batches, industry can be greatly promoted
Development.
The present invention is implemented as follows: improved defect ground structure low-pass filter, including medium substrate, in medium substrate
Upper surface be equipped with Stepped Impedance cellular construction, the every side of Stepped Impedance cellular construction is two ranks, each Stepped Impedance unit knot
Structure is all made of rectangle and the hexagonal structure connecting with rectangle, the rectangular configuration part and six of each Stepped Impedance cellular construction
Side shape structure division composition, size meets impedance ratio requirement, and connects on the transmission line；It is equipped in the lower surface of medium substrate
Metal ground plane is equipped with defect ground structure in the central region of metal ground plane, and the composition of the defect ground structure includes one vertical
The lateral rectangular channel being parallel to each other to rectangular channel and three, lateral rectangular channel and longitudinal rectangular channel are interlaced, longitudinal rectangular channel
And lateral rectangular channel directly passes to the lower surface of medium substrate.
Stepped Impedance cellular construction and metal layer thickness are 0.1mm.
The material of medium substrate is Rogers Ro4003 medium substrate material, and relative dielectric constant 3.55, loss angle is just
It is cut to 0.0027, with a thickness of 0.81mm.With lower dielectric loss, conduction band metal and substrate cut-off adhesive force are well etc. special for it
Point.
By adopting the above-described technical solution, present invention employs two special rank Stepped Impedance structural units, the step
Impedance unit uses the tactic pattern of the hexagonal shape structure connected by narrow rectangular configuration with narrow rectangular configuration, can not subtract
The length for shortening Stepped Impedance structural unit in the case where small load Q has very big freedom degree in structure and design, is easy real
The miniaturization of existing microwave device.In addition, present invention optimizes the defect ground structure of bottom, change can substrate material effective dielectric
Constant distribution, and then influence the current distribution of earth plate and the transmission characteristic of microstrip transmission line.This defect ground structure of invention
By improving the high impedance band width and Out-of-band rejection intensity of low-pass filter, to improve the low pass filtered baud of low-pass filter
Property.Moreover, this defect ground structure, relatively simple for structure, it is convenient for Electromagnetic Field Analysis and equivalent circuit modeling analysis, it is more suitable
The advantages of closing integrated circuit practical application.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is the bottom view of Fig. 1；
Fig. 3 is the top view of Fig. 1；
Fig. 4 is the equivalent-circuit model of DGS structure low-pass filter of the invention；
Fig. 5 is the equivalent circuit emulation and HFSS emulation of defect ground structure low-pass filter of the invention；
Fig. 6 is defect ground structure low-pass filter HFSS emulation and measured result figure of the invention.
Specific embodiment
The embodiment of the present invention: improved defect ground structure low-pass filter, including medium substrate 1, in medium substrate 1
Upper surface be equipped with Stepped Impedance cellular construction 2, every two rank of side of Stepped Impedance cellular construction 2, each Stepped Impedance cellular construction 2 by
Rectangular configuration part 2-1 and hexagonal structure part 2-2 composition, the rectangular configuration part of each Stepped Impedance cellular construction 2 and
Hexagonal structure part meets impedance ratio requirement when design, and Stepped Impedance cellular construction 2 passes through its rectangular configuration part 2-1
Connection is on the transmission line；It is equipped with one layer of metal ground plane 3 in the lower surface of medium substrate 1, in the central region of metal ground plane 3
Fluting is designed to defect ground structure 4, and the composition of the defect ground structure 4 includes a longitudinal rectangular channel and three cross being parallel to each other
To rectangular channel, lateral rectangular channel and longitudinal rectangular channel are interlaced, and longitudinal rectangular channel and lateral rectangular channel directly pass to medium
The lower surface of substrate 1.Stepped Impedance cellular construction 2 and 3 thickness of metal layer are 0.1mm.
The material of medium substrate 1 is Rogers Ro4003 medium substrate material, relative dielectric constant 3.55, loss angle
Just it is cut to 0.0027.The features such as it is with lower dielectric loss, conduction band metal and good substrate cut-off adhesive force.
In the present embodiment, it is 3.55 that medium substrate 1, which selects relative dielectric constant, the Rogers that loss angle tangent is 0.0027
Ro4003 medium substrate material.The medium substrate has lower dielectric loss, and conduction band metal and substrate cut-off adhesive force are good etc.
Feature is highly suitable as the medium substrate of the low-pass filter of invention.The selection of medium substrate 1 is critically important, it is that input is defeated
The transmitting carrier of signal out directly affects the transmission loss of signal, the size and radio circuit power of microwave device
The important parameters such as capacity.It is therefore desirable to comprehensively consider the selection of medium substrate, material selection and the ruler of medium substrate are specifically included
Very little size selection.Select with a thickness of h=0.81mm, the medium substrate 1 of the present embodiment be designed and sized to a × b=35mm ×
28mm。
Defect ground structure 4 of the invention is distributed by changing the effective dielectric constant of substrate material, so that by DGS structure structure
At microstrip line there is band-stop response and slow wave characteristic, and then influence earth plate current distribution and microstrip transmission line transmission it is special
Property.This defect ground structure passes through the high impedance band width and Out-of-band rejection intensity for improving low-pass filter, to improve low pass
The low-frequency filter characteristics of filter.Moreover, this defect ground structure of invention, relatively simple for structure, convenient for Theory of Electromagnetic Field point
Analysis and equivalent circuit modeling analysis, the advantages of being more suitable for integrated circuit practical application.
In figure 2 and figure 3, the 4 low-pass filter structural dimensions parameter of defect ground structure of invention is as shown in table 1.
The defect ground structure low-pass filter structural dimensions parameter (unit: mm) of 1 invention of table
Equivalent-circuit model is established using ADS (Advanced designer Summer), DGS structure low-pass filter
Equivalent-circuit model is as shown in Figure 4.L in equivalent circuit1, L3And C1, C2, C3Be Stepped Impedance structural unit equivalent inductance and
Equivalent capacity.Wherein C4And L3The impedance circuit of composition controls the position of the trap wave point of 4 low-pass filter of defect ground structure.It grinds
Study carefully the equivalent-circuit model of structural unit, establishes theoretical basis for further design defect ground structure low-pass filter.
Equivalent circuit input/output port of the invention meets 50 ohm of match circuits, equivalent-circuit component parameter such as 2 institute of table
Show.
The equivalent-circuit component parameter list of 2 defect ground structure decorum filter of table
ADS simulation result of the invention and the comparison of ANSOFT HFSS simulation result are as shown in Figure 5.Test result shows
The simulation result and ANSOFT HFSS simulation result for imitating circuit have preferable consistency to a certain extent.
Test result and ANSOFT HFSS simulation result of the invention is as shown in Figure 6.The return loss of filter from figure
Curve S11With insertion loss curve S21As can be seen that the filter passband width of invention is 0GHz~1.4GHz.Defect ground structure
The Out-of-band rejection band width of filter reaches 2.1GHz~11GHz, and Out-of-band rejection ability is greater than 15dB in stopband range, mentions significantly
The high filtering characteristic of defect ground structure low-pass filter.
Size design and parameter provided by the invention are only a kind of specific examples, and those skilled in the art are according to parameter requirements
The modification that size is adapted to.
Claims (2)
1. a kind of improved defect ground structure low-pass filter, including medium substrate (1), it is characterised in that: in medium substrate (1)
Upper surface be equipped with Stepped Impedance cellular construction (2), Stepped Impedance cellular construction (2) every side is two ranks, each Stepped Impedance
Cellular construction (2) is all made of rectangle and the hexagonal structure connecting with rectangle, the rectangle of each Stepped Impedance cellular construction (2)
Structure division (2-1) and hexagonal structure part (2-2) composition, size meets impedance ratio requirement, and (2) are connected to transmission line
On；Metal ground plane (3) are equipped in the lower surface of medium substrate (1), are set defectively in the central region of metal ground plane (3)
Structure (4), the composition of the defect ground structure (4) include a longitudinal rectangular channel and three lateral rectangular channels being parallel to each other, cross
Interlaced to rectangular channel and longitudinal rectangular channel, longitudinal rectangular channel and lateral rectangular channel directly pass under medium substrate (1)
Surface.
2. improved defect ground structure low-pass filter according to claim 1, it is characterised in that: medium substrate (1)
Material be Rogers Ro4003 medium substrate material, relative dielectric constant 3.55, loss angle tangent 0.0027, with a thickness of
0.7-0.9mm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811085973.4A CN109216838B (en) | 2018-09-18 | 2018-09-18 | Improved defected ground structure low-pass filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811085973.4A CN109216838B (en) | 2018-09-18 | 2018-09-18 | Improved defected ground structure low-pass filter |
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| Publication Number | Publication Date |
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| CN109216838A true CN109216838A (en) | 2019-01-15 |
| CN109216838B CN109216838B (en) | 2020-06-16 |
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| CN201811085973.4A Active CN109216838B (en) | 2018-09-18 | 2018-09-18 | Improved defected ground structure low-pass filter |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729537A (en) * | 2019-10-30 | 2020-01-24 | 北京中石正旗技术有限公司 | Flexible low pass filter based on Pi type structure |
| CN111613502A (en) * | 2020-05-13 | 2020-09-01 | 南京信息工程大学 | Slow wave structure based on plane surface plasmon polariton |
| CN114883772A (en) * | 2022-07-07 | 2022-08-09 | 香港中文大学（深圳） | Transmission line module for rotary traveling wave oscillator and design method thereof |
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| US7504913B2 (en) * | 2006-02-03 | 2009-03-17 | Samsung Electronics Co., Ltd. | DC block with band-notch characteristic using DGS |
| CN102723542A (en) * | 2012-06-14 | 2012-10-10 | 重庆大学 | Ultra-broad stopband microstrip low-pass filter |
| CN103633399A (en) * | 2013-11-19 | 2014-03-12 | 华南理工大学 | Microstrip ultra wide stop band low pass filter |
| CN105896005A (en) * | 2016-04-28 | 2016-08-24 | 湖北大学 | Small-size low-loss wide-stop-band sharp cut-off microstrip low-pass filter |
-
2018
- 2018-09-18 CN CN201811085973.4A patent/CN109216838B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7504913B2 (en) * | 2006-02-03 | 2009-03-17 | Samsung Electronics Co., Ltd. | DC block with band-notch characteristic using DGS |
| CN102723542A (en) * | 2012-06-14 | 2012-10-10 | 重庆大学 | Ultra-broad stopband microstrip low-pass filter |
| CN103633399A (en) * | 2013-11-19 | 2014-03-12 | 华南理工大学 | Microstrip ultra wide stop band low pass filter |
| CN105896005A (en) * | 2016-04-28 | 2016-08-24 | 湖北大学 | Small-size low-loss wide-stop-band sharp cut-off microstrip low-pass filter |
Non-Patent Citations (1)
| Title |
|---|
| JIAN-KANG XIAO, ET. AL: "Non-uniform DGS Low Pass Filter with Ultra-wide Stopband", 《PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON ANTENNAS, PROPAGATION AND EM THEORY》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729537A (en) * | 2019-10-30 | 2020-01-24 | 北京中石正旗技术有限公司 | Flexible low pass filter based on Pi type structure |
| CN111613502A (en) * | 2020-05-13 | 2020-09-01 | 南京信息工程大学 | Slow wave structure based on plane surface plasmon polariton |
| CN114883772A (en) * | 2022-07-07 | 2022-08-09 | 香港中文大学（深圳） | Transmission line module for rotary traveling wave oscillator and design method thereof |
| CN114883772B (en) * | 2022-07-07 | 2022-09-23 | 香港中文大学（深圳） | Transmission line module for rotary traveling wave oscillator and design method thereof |
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| Publication number | Publication date |
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| CN109216838B (en) | 2020-06-16 |
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