CN112002970A - Miniaturized millimeter wave on-chip band-pass filter - Google Patents
Miniaturized millimeter wave on-chip band-pass filter Download PDFInfo
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- CN112002970A CN112002970A CN202010715538.6A CN202010715538A CN112002970A CN 112002970 A CN112002970 A CN 112002970A CN 202010715538 A CN202010715538 A CN 202010715538A CN 112002970 A CN112002970 A CN 112002970A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20309—Strip line filters with dielectric resonator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/2039—Galvanic coupling between Input/Output
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Abstract
The invention discloses a miniaturized millimeter wave on-chip band-pass filter which comprises an input port, a first composite left-right hand resonance unit, a second composite left-right hand resonance unit and an output port, wherein the input port is connected with the first composite left-right hand resonance unit through a first microstrip line, the first composite left-right hand resonance unit is connected with the second composite left-right hand resonance unit through two parallel second microstrip lines, the second composite left-right hand resonance unit is connected with the output port through a third microstrip line, millimeter wave signals are introduced from the input port, pass through the first composite left-right hand resonance unit and the second composite left-right hand resonance unit, and are finally output through the output port. The miniaturized millimeter wave on-chip band-pass filter utilizes the coupling effect between the composite left-hand resonance unit and the composite right-hand resonance unit to construct the capacitance-inductance parallel resonance unit to form a transmission zero point, thereby enhancing the out-of-band rejection degree of the band-pass filter; the performance indexes of miniaturization, low loss and high inhibition are realized.
Description
Technical Field
The invention relates to a band-pass filter, in particular to a miniaturized millimeter wave on-chip band-pass filter.
Background
The millimeter wave band-pass filter is one of important modules in a modern wireless communication system, along with the rapid development of a radio frequency integrated circuit, the miniaturization trend of a communication equipment terminal and the shortage of frequency spectrum resources, higher requirements are put forward on the performance and the size of the filter, the miniaturization of the communication equipment requires the filter to be more miniaturized, the shortage of the frequency spectrum resources requires the filter to have good out-of-band rejection and lower insertion loss, otherwise, signals of adjacent channels can cause interference, and the development trend of the miniaturization and the high performance of the filter is more and more obvious in order to meet the requirements of the miniaturization and the high integration level of the system.
The composite left-right hand structure is a double-negative-polarity medium structure, a double-negative-polarity medium is also called a left-hand material, is one of artificial engineering materials, and is characterized in that the dielectric constant is a negative value, the magnetic permeability is less than zero, and when electromagnetic waves propagate in the material with the property, the electric field vector, the magnetic field vector and the wave vector of the electromagnetic waves do not conform to the right-hand rule under the general condition any more, but can satisfy the left-hand spiral relationship, so that the left-hand material has a plurality of special electromagnetic characteristics. The composite left-right hand structure is a special form of a double-negative-polarity medium, and can form unique zero-order resonance by combining with a filter, so that the size of the filter is independent of the wavelength, and the miniaturization of the filter is effectively realized. The existing band-pass filter with the composite left-right-hand structure has the advantages of low loss and large bandwidth, but the out-of-band rejection degree is not enough, and the transmission zero point is not obvious enough.
Disclosure of Invention
The purpose of the invention is as follows: in view of the above problems, the present invention aims to provide a miniaturized millimeter wave on-chip band-pass filter, which utilizes a composite left-right-hand structure to realize the miniaturization of the filter and simultaneously improve the out-of-band rejection degree and the in-band flatness.
The technical scheme is as follows: the invention relates to a miniaturized millimeter wave on-chip band-pass filter which comprises an input port, a first composite left-right hand resonance unit, a second composite left-right hand resonance unit and an output port, wherein the input port is connected with the first composite left-right hand resonance unit through a first microstrip line, the first composite left-right hand resonance unit is connected with the second composite left-right hand resonance unit through two parallel second microstrip lines, the second composite left-right hand resonance unit is connected with the output port through a third microstrip line, millimeter wave signals are introduced from the input port and pass through the first composite left-right hand resonance unit and the second composite left-right hand resonance unit, and finally, the millimeter wave signals are output from the output port.
The first composite left-right hand resonance unit comprises an upper parallel fourth microstrip line and a lower parallel fourth microstrip line, a plurality of metal interdigital are arranged between the fourth microstrip lines in parallel, the metal interdigital forms an interdigital capacitor to serve as a series capacitor of the first composite left-right hand resonance unit, the fourth microstrip line is connected with a first grounding through hole to serve as a parallel inductor of the first composite left-right hand resonance unit, the third part of the parasitic capacitor between the fourth microstrip line, the metal interdigital and the substrate ground serves as a parallel capacitor of the first composite left-right hand resonance unit, and the parasitic inductor between the fourth microstrip line serves as a series inductor of the first composite left-right hand resonance unit.
The second composite left-right hand resonance unit comprises an upper parallel fifth microstrip line and a lower parallel fifth microstrip line, a plurality of metal interdigital are arranged between the fifth microstrip lines in parallel, the metal interdigital forms an interdigital capacitor to serve as a series capacitor of the second composite left-right hand resonance unit, the fifth microstrip line is connected with a first grounding through hole to serve as a parallel inductor of the second composite left-right hand resonance unit, the parasitic capacitors between the fifth microstrip line, the metal interdigital and the substrate ground serve as parallel capacitors of the second composite left-right hand resonance unit, and the parasitic inductors existing between the fifth microstrip line serve as series inductors of the second composite left-right hand resonance unit.
The number of metal fingers in the first composite left-right hand resonance unit is not less than 3.
The number of metal fingers in the second composite left-right hand resonance unit is consistent with that of the first composite left-right hand resonance unit.
Has the advantages that: compared with the prior art, the invention has the following remarkable advantages:
1. the on-chip band-pass filter is formed by cascading two composite left-hand and right-hand resonance units, and a capacitance-inductance parallel resonance unit is constructed by utilizing the coupling effect between the composite left-hand and right-hand resonance units to form a transmission zero point, so that the out-of-band rejection degree of the band-pass filter is enhanced;
2. the size of the parameters of the series and parallel elements is controlled by adjusting the structural size of the on-chip band-pass filter, so that the pass band of the filter is determined, and the zero pole in a transmission function is adjusted by optimizing the size and adjusting the position of a grounding inductor, so that the in-band flatness is improved;
3. the on-chip band-pass filter realizes the performance indexes of miniaturization, low loss and high inhibition.
Drawings
FIG. 1 is a three-dimensional perspective view of the present invention;
FIG. 2 is a top view of the present invention;
FIG. 3 is a schematic diagram of a composite right and left hand resonant unit of the present invention;
FIG. 4 is a graph of test data according to the present invention.
Detailed Description
As shown in fig. 1 and 2, the embodiment adopts a 0.35 μm GaAs HBT process, and the miniaturized millimeter wave on-chip band-pass filter of the embodiment includes an input port 1, a first composite right-left-hand resonance unit 9, a second composite right-left-hand resonance unit 4, and an output port 5, where the input port 1 is connected to the first composite right-left-hand resonance unit 9 through a first microstrip line 11, the first composite right-left-hand resonance unit 9 is connected to the second composite right-hand resonance unit 4 through two parallel second microstrip lines 8, the second composite right-hand resonance unit 4 is connected to the output port 5 through a third microstrip line 12, the band-pass filter further includes 4 second ground vias 2 around, a ground terminal 6 is connected to the second ground vias 2, the ground terminal 6 and the input and output microstrip lines form a GSG pad structure, where G on both sides is the ground terminal 6, and S in the, the grounding effect can be improved.
The first composite left-right hand resonance unit 9 includes an upper and a lower parallel fourth microstrip lines 3, 4 metal fingers 10 are arranged in parallel between the fourth microstrip lines 3, the 4 metal fingers 10 form an interdigital capacitor as a series capacitor of the first composite left-right hand resonance unit 9, the lower fourth microstrip line 3 is connected to a first grounding via 13 as a parallel inductor of the first composite left-right hand resonance unit 9, three parts of the parasitic capacitors between the two fourth microstrip lines 3, the metal fingers 10 and the substrate ground are used as a parallel capacitor of the first composite left-right hand resonance unit 9, and the parasitic inductor existing between the two fourth microstrip lines 3 is used as a series inductor of the first composite left-right hand resonance unit 9, as shown in fig. 3.
The second composite left-right hand resonance unit 4 comprises an upper fifth microstrip line 7 and a lower fifth microstrip line 7 which are parallel, 4 metal interdigital strips 10 are arranged between the fifth microstrip lines 7 in parallel, the 4 metal interdigital strips 10 form an interdigital capacitor to serve as a series capacitor of the second composite left-right hand resonance unit 4, the upper fifth microstrip line 7 is connected with a first grounding through hole 13 to serve as a parallel inductor of the second composite left-right hand resonance unit 4, the parasitic capacitors between the two fifth microstrip lines 7, the metal interdigital strips 10 and the substrate ground serve as a parallel capacitor of the second composite left-right hand resonance unit 4, and the parasitic inductor existing between the two fifth microstrip lines 7 serves as a series inductor of the second composite left-right hand resonance unit 4. The zero pole in the transmission function of the on-chip band-pass filter is adjusted by controlling the length, the width and the gap of the metal interdigital and the position of the grounding through hole, so that the overall performance of the filter is adjusted. Fig. 4 is a graph of test data of this embodiment, a dotted line S11 represents return loss, a solid line S21 represents insertion loss, an operating frequency band of the miniaturized millimeter wave on-chip band-pass filter is 24GHz-28GHz, insertion loss is 1.5dB, out-of-band rejection at 38GHz is 37dB, a chip size is only 653um 504um, and performance indexes of miniaturization, low loss, and high rejection are achieved.
Claims (5)
1. The utility model provides a miniaturized millimeter wave band-pass filter on piece, its characterized in that, includes input port (1), first compound right-hand and left-hand resonance unit (9), the compound right-hand and left-hand resonance unit (4) of second and output port (5), input port (1) connects first compound right-hand and left-hand resonance unit (9) through first microstrip line (11), first compound right-hand and left-hand resonance unit (9) connect second compound right-hand and left-hand resonance unit (4) through two parallel second microstrip lines (8), second compound right-hand and left-hand resonance unit (4) connect output port (5) through third microstrip line (12).
2. The miniaturized millimeter-wave on-chip band-pass filter according to claim 1, the first composite left-right hand resonance unit (9) comprises an upper and a lower parallel fourth microstrip lines (3), many metal interdigital (10) of parallel arrangement between fourth microstrip line (3), many metal interdigital (10) form the series capacitance of interdigital electric capacity as hand resonance unit (9) about first compound, downside fourth microstrip line (3) are connected first ground connection through-hole (13) and are regarded as the parallel inductance of hand resonance unit (9) about first compound, two parasitic capacitance triplex between fourth microstrip line (3), metal interdigital (10) and the substrate ground is regarded as the parallel capacitance of hand resonance unit (9) about first compound, two parasitic inductance that exists between fourth microstrip line (3) is regarded as the series inductance of hand resonance unit (9) about first compound.
3. The miniaturized millimeter-wave on-chip band-pass filter according to claim 1, the second composite left-right hand resonance unit (4) comprises an upper and a lower parallel fifth microstrip lines (7), a plurality of metal interdigital (10) are arranged in parallel between the fifth microstrip line (7), the metal interdigital (10) forms an interdigital capacitor to serve as a series capacitor of the second composite left-right hand resonance unit (4), the fifth microstrip line (7) is connected with a first grounding through hole (13) to serve as a parallel inductor of the second composite left-right hand resonance unit (4), the third part of the parasitic capacitor between the fifth microstrip line (7), the metal interdigital (10) and the substrate ground serves as a parallel capacitor of the second composite left-right hand resonance unit (4), and the parasitic inductor between the fifth microstrip line (7) serves as a series inductor of the second composite left-right hand resonance unit (4).
4. The miniaturized millimeter-wave on-chip band-pass filter according to claim 1, wherein the number of metal interdigital transducers (10) in the first composite left-right hand resonance unit (9) is not less than 3.
5. The miniaturized millimeter-wave on-chip band-pass filter according to claim 1, wherein the number of metal fingers (10) in the second composite left-right-hand resonant element (4) and the first composite left-right-hand resonant element (9) is the same.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010715538.6A CN112002970A (en) | 2020-07-23 | 2020-07-23 | Miniaturized millimeter wave on-chip band-pass filter |
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| CN202010715538.6A CN112002970A (en) | 2020-07-23 | 2020-07-23 | Miniaturized millimeter wave on-chip band-pass filter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115117580A (en) * | 2022-07-12 | 2022-09-27 | 安徽大学 | High-rectangular-coefficient semi-lumped millimeter wave filter chip based on cross-coupling structure |
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2020
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115117580A (en) * | 2022-07-12 | 2022-09-27 | 安徽大学 | High-rectangular-coefficient semi-lumped millimeter wave filter chip based on cross-coupling structure |
| CN115117580B (en) * | 2022-07-12 | 2024-04-30 | 安徽大学 | High rectangular coefficient semi-lumped millimeter wave filter chip based on cross coupling structure |
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