KR101407727B1 - Compact low-loss filters with the stacked and SIW structure for satellite communications terminals - Google Patents

Abstract

According to an embodiment, provided is a compact low-loss filter which comprises: a ground layer; a dielectric layer disposed on the ground layer; a first metal layer which is disposed on the dielectric layer and is connected to a first and a second via disposed in parallel with the ground layer; and a second metal layer which is disposed inside of the dielectric layer and is connected to a third via and the first metal layer.

Description

Technical Field [0001] The present invention relates to a compact low-loss filter having a stacked structure and a SIW structure for a military satellite terminal,

The present invention relates to a small-sized low-loss filter, and more particularly, to a small-sized low-loss filter having a complex right-handed and left-handed transmission characteristic of a metamaterial and easy to minimize a substrate loss to an input signal.

In general, metal waveguides have been used in microwave, radar and antenna development for nearly 60 years. However, the conventional metal waveguide structure is not suitable for miniaturization due to its size and weight. However, a planar structure such as a microstrip led to miniaturization and integration of microwave devices and systems. Nonetheless, the use of waveguides in satellite systems and aeronautical / aerospace antennas is essential because of the power handling of the metal waveguides and the low insertion loss due to the high quality factor. Today, however, SIW (Substrate Integrated Waveguide) technology is being studied to design a waveguide-like performance on a microstrip substrate, and SIW technology can solve the disadvantage of large and heavy metal waveguides.

It is an object of the present invention to provide a compact, low-loss filter having a complex right-handed transmission and a left-handed transmission characteristic of a meta-material and which is easy to minimize a substrate loss with respect to an input signal.

A small, low-loss filter according to an embodiment includes a ground layer, a dielectric layer disposed on the ground layer, first and second vias disposed on the dielectric layer and disposed parallel to the ground layer, a first metal layer connected via a via and a second metal layer disposed within the dielectric layer and connected with the first and third vias.

At least one of the ground layer and the first and second metal layers according to the embodiment includes at least one of copper, silver, aluminum, and gold.

The dielectric layer according to an embodiment includes a first dielectric layer disposed on the ground layer and a second dielectric layer disposed on the first dielectric layer.

The first dielectric layer according to an embodiment includes the same dielectric as the second dielectric layer.

The dielectric constant of the first dielectric layer according to the embodiment is 1 to 1.25 times the dielectric constant of the second dielectric layer.

The thickness of the first dielectric layer is 1 to 2 times the thickness of the second dielectric layer.

A gap is formed between the first and second dielectric layers according to the embodiment.

The dielectric layer according to the embodiment includes an adhesive layer disposed between the first and second dielectric layers.

The second metal layer is disposed between the first and second dielectric layers according to the embodiment.

The first metal layer according to the embodiment includes first and second terminal portions, a first via line in which the first via is disposed between the first and second terminal portions, a second via line parallel to the first via line, And a third via line in which the second via is arranged between the first and second via rows and a second via line in which a phase of an input signal and an output signal are provided between each of the first and second terminal portions and the body portion, And a phase shifter for shifting the phase shifter.

The first and second terminal portions according to the embodiment are transmission lines of 50? To 75 ?.

The width of at least one of the first and second terminal portions according to the embodiment is 2.4 mm to 2.6 mm.

The first and second terminal portions according to the embodiment are formed symmetrically with respect to the center of the first and second via columns.

The first via line according to the embodiment includes a plurality of first via holes in which the first via is disposed and the second via line includes a plurality of second via holes in which the second via is disposed, The width of at least one of the first and second via holes is 0.3 mm to 1.1 mm.

The spacing distance between adjacent first via holes among the plurality of first via holes according to the embodiment is 0.6 mm to 1.6 mm.

The third via hole according to the embodiment includes at least two or more third via holes, and the width of the third via hole is 0.2 mm to 0.5 mm.

The third via hole according to the embodiment includes at least two or more third via holes, and the body portion has a slit groove formed between third via holes adjacent to each other among the at least two third via holes.

The slit groove according to the embodiment includes first and second slit grooves spaced apart from each other, and a distance between the first and second slit grooves is 1.6 mm to 3.5 mm.

The body part according to the embodiment includes a first body connected to the first terminal part and a second body part separated from the first body part and connected to the second terminal part.

The body according to the embodiment includes a third body disposed between the first body and the second body and spaced apart from the first body.

The second metal layer according to the embodiment overlaps with the first metal layer.

The thickness of the second metal layer according to an embodiment is 0.03 mm to 0.04 mm.

The length of the third vias according to the embodiment is 0.6 to 0.7 times the length of any one of the first and second vias.

The second metal layer may include a first metal portion and a second metal portion spaced apart from the first metal portion. The size of the first metal portion may be 1 to 1.2 times the size of the second metal portion to be.

Unlike a conventional SIW (substrate waveguide) structure, the small-sized low-loss filter according to the embodiment adds a slit groove to a mushroom structure and a first metal layer as a new shape in the SIW structure, thereby generating a left-hand rule phenomenon of a CRLH characteristic This structure is advantageous in miniaturization and weight reduction.

The harmonic characteristics are suppressed in the small-sized low-frequency filter according to the embodiment, so that the harmonic characteristic is not generated in the duplexer when designing, so that adverse effects on each pass band can be prevented. By forming the slit groove of the first metal layer, There is an advantage to obtain characteristics.

1 is a perspective view showing a small-sized low-loss filter according to an embodiment.
2 is an exploded perspective view showing the small-sized low-loss filter shown in Fig.
3 is a top plan view of the miniature low loss filter shown in Fig.
Fig. 4 is a view showing the coupling structure of the first and second metal layers shown in Fig. 1. Fig.
5 is a cross-sectional view showing a cross section of the miniaturized low-loss filter shown in Fig.
6 is a perspective view showing the first and second metal layers of the small-size, low-loss filter shown in Fig.
7 is a graph showing return loss according to the size of the second metal layer shown in FIG.
FIG. 8 is a graph showing return loss according to the length of the third via shown in FIG. 2. FIG.
FIG. 9 is a graph showing return loss due to a change in dielectric constant of the first dielectric layer shown in FIG. 2. FIG.
FIG. 10 is a graph showing return loss due to a change in dielectric constant of the second dielectric layer shown in FIG. 2. FIG.
11 is a graph showing frequency characteristics in an X-band to which a small-sized low-loss filter according to an embodiment is applied.
12 is a graph showing frequency characteristics in a Ku-band to which another small-sized low-loss filter according to the embodiment is applied.
13 is a view showing an electric field distribution of a small-size, low-loss filter according to an embodiment.
FIG. 14 is a graph showing energy and propagation direction of a small-sized low-loss filter according to an embodiment.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to designate the same or similar components throughout the drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. In addition, the preferred embodiments of the present invention will be described below, but it is needless to say that the technical idea of the present invention is not limited thereto and can be variously modified by those skilled in the art.

FIG. 1 is a perspective view showing a small-sized low-loss filter according to the embodiment, FIG. 2 is an exploded perspective view showing the small-size low-loss filter shown in FIG. 1, 1 shows the bonding structure of the first and second metal layers shown in Fig.

1 to 4, a small, low-loss filter may include a ground layer 10, a dielectric layer 20, a first metal layer 30, and a second metal layer 40.

The passband of a small-sized low-pass filter according to an embodiment may be an X-band (7.3-7.8 GHz) and a Ku-band (12.3-12.8 GHz), but is not limited thereto.

The small-sized low-pass filter according to the embodiment considers the band-to-band isolation and can improve the skirt characteristic by generating a transmission zero after the upper and lower sides of the pass band.

The small-sized low-pass filter according to the embodiment has the CRLH characteristic of the SIW structure, that is, the right-hand propagation law and the left-hand propagation law are combined. The series inductor and the parallel capacitor are elements of the right-hand propagation law that forms a phase delay. Parallel inductors are elements of the left hand propagation law that make phase leads.

The right-hand propagation law on the microstrip line is a phenomenon commonly observed in the natural world, and the traveling direction of the energy of the radio wave and the phase have the same phase, which corresponds to the low-pass characteristic of the filter.

The left hand propagation law is implemented as a pair of series capacitors and parallel inductors. The traveling direction of the energy and phase of the radio wave has an opposite phase.

Therefore, when the elements of the right hand propagation law and the elements of the left hand propagation law are placed on the microstrip line, the phase delay occurring in the transmission line of the right hand propagation law can be canceled out by the phase line by the left hand propagation law.

That is, the resonance frequency of the elements of the right hand propagation law and the resonant frequency of the elements of the left hand propagation law are equally centered on the desired band. It is said that it satisfies the balanced condition. The frequency exists but the phase and the propagation constant become zero, and a ZOR (Zeroth Order Resonance) phenomenon occurs in which resonance independent of wavelength occurs.

In this case, since the resonance condition does not depend on the size of the resonator, the size of the band-pass filter may be 0.25? Or less. It is also possible to create bandwidths by placing L and C so that adjacent resonators can couple.

Referring to FIGS. 1 and 2, a small-sized low-loss filter has been shown to pass through one of X-band (7.3-7.8 GHz) and Ku-band (12.3-12.8 GHz) , But is not limited thereto.

First, a small, low-loss filter can be connected in an inductive coupling structure and imparts a metamaterial characteristic.

At least one of the ground layer 10 and the first and second metal layers 30 and 40 may be at least one of copper (Cu), silver (Ag), aluminum (Al), and gold (Au) Do not.

The dielectric layer 20 is disposed on the ground layer 10 and may include first and second dielectric layers 22 and 24.

The first dielectric layer 22 is disposed on the ground layer 10 and the second dielectric layer 24 is disposed on the first dielectric layer 22.

The first and second dielectric layers 22 and 24 may be the same dielectric and may include other dielectrics when the dielectric constants are similar to each other.

That is, the dielectric constant of the first dielectric layer 22 may be 1 to 1.2 times the dielectric constant of the second dielectric layer 24, and when the dielectric constant of the first dielectric layer 22 is less than 1 times or 1.25 times larger than that of the second dielectric layer 24, The attenuation rate by the signal can be increased.

The thickness of the first dielectric layer 22 may be 1 to 2 times the thickness of the second dielectric layer 24 and the thickness of the second dielectric layer 24 may be 1 to 2 times the thickness of the first dielectric layer 22. [ Double, and not limited to.

In other words, the first and second dielectric layers 22 and 24 have first and second metal layers 30 and 40 and first and second vias 50 and 50 connecting the first metal layer 30 and the ground layer 10, The inductance and the capacitance can be determined by the third vias 60 connecting the first and second metal layers 30 and 40. The frequency of the input signal, that is, the X-band and the Ku-band, Or to block other bands.

Although the first and second dielectric layers 22 and 24 are shown as being separated from each other according to the stacking order, they may be one dielectric layer, but are not limited thereto.

A second metal layer 40 may be disposed between the first and second dielectric layers 22 and 24 and a gap may be formed between the first and second dielectric layers 22 and 24 by a second metal layer 40 May be formed.

An adhesive layer (not shown) for bonding the first and second dielectric layers 22 and 24 may be formed between the first and second dielectric layers 22 and 24, but is not limited thereto.

The first and second dielectric layers 22 and 24 extend through the first and second vias 50 connecting the first metal layer 30 and the ground layer 10 and extend in the first and second via- h_1, V-h_2) may be formed.

A third via hole 60 connecting the first metal layer 30 and the second metal layer 40 may be disposed in the second dielectric layer 24 and a third via hole Vh may be formed in the second dielectric layer 24 .

First, the second metal layer 40 is disposed on the first dielectric layer 22, and at least one metal portion (not shown) may be disposed apart from each other, but is not limited thereto.

The size of any one of the at least one metal portion may be 1 to 1.2 times the size of any other metal portion.

The thickness of the second metal layer 40 may be 0.03 mm to 0.04 mm and may be connected to the first metal layer 30 and the third via 60 to have a predetermined inductance value.

At this time, the width and length of the third vias 60 are important factors for determining the inductance value, and they may have a length of 0.6 to 0.7 times the length of any one of the first and second vias 50.

In addition, the length of the third vias 60 may be equal to or longer than the thickness of the second dielectric layer 24, but is not limited thereto.

The first metal layer 30 may include a first terminal portion 31, a first phase shift portion 33, a body portion 35, a second phase shift portion 37, and a second terminal portion 39.

The width of at least one of the first and second terminal portions 31 and 39 may be 2.4 mm to 2.6 mm, and the width of the first and second terminal portions 31 and 39 may be, for example, .

The first and second phase transitions 33 and 37 basically utilize the above two principles (fast / slow-wave effect), but are not limited thereto.

The body portion 35 has a first via hole 50 disposed between the first and second terminal portions 31 and 39 and a first via hole 32 corresponding to the first via hole 32 formed in the dielectric layer 20 A second via line Vh2 parallel to the first via line Vh1 and corresponding to the second via hole H-2 formed in the dielectric layer 20, and the second via line Vh2 corresponding to the second via hole H- A second via 60 is disposed between the two via columns Vh1 and Vh2 and a third via column Vh corresponding to the third via hole Vh of the dielectric layer 20. [

The first via line Vh1 includes a plurality of first via holes (not shown) in which the first via 50 is disposed and the second via line Vh2 includes a plurality of second via holes 50 And a second via hole (not shown).

At least one of the first and second via holes may have a width of 0.3 mm to 1.1 mm, and a distance between the first via holes adjacent to the first via hole may be 0.6 mm to 1.6 mm.

In the embodiment, the first and second via holes are described as being equal to each other, but the present invention is not limited thereto.

The third via hole Vh may be at least two or more, and the width of the third via hole Vh may be from 0.2 mm to 0.5 mm.

At this time, the body portion 35 may be formed with a slit groove (not shown) between the adjacent third via holes Vh among the at least two third via holes Vh.

The slit grooves may include first and second slit grooves (not shown) spaced from each other, and the distance between the first and second slit grooves may be 1.6 mm to 3.5 mm, but is not limited thereto.

The first and second vias 50 may form an electric field wall by connecting the first metal layer 30 and the ground layer 10 and the third vias 60 may be formed by connecting the first and second metal plates 30, The first and second metal layers 30 and 40, the dielectric layer 20, and the ground layer 10 may have a capacitance value, but the present invention is not limited thereto.

FIG. 5 is a cross-sectional view of a small-sized low-loss filter shown in FIG. 1, and FIG. 6 is a perspective view showing first and second metal layers of the small-

5 shows a cross section of a small, low-loss filter, which includes a ground layer 10, a dielectric layer 20 and first and second metal layers 30 and 40.

That is, the ground layer 10 is the same size as the dielectric layer 20 and can support the dielectric layer 20 in a laminated manner.

Here, the dielectric layer 20 may include a first dielectric layer 22 having a first thickness d1 and a second dielectric layer 24 having a second thickness d2 on the first dielectric layer 22.

That is, as described above, the second thickness d12 may be 1 to 2 times the first thickness d2, the first thickness d1 may be 0.5 mm to 0.51 mm, and the second thickness d2 ) May be between 0.8 mm and 0.85 mm.

The first metal layer 30 is connected to the ground layer 10 by first and second vias 50 and may be connected to the second metal layer 40 by a third via 60.

6 shows a perspective view in which the first and second metal layers 30 and 40 are combined.

6 includes the first and second terminal portions 31 and 39, the first and second phase transitions 33 and 37, and the body portion 35, and the second metal layer 30 40 includes a metal portion (not shown) spaced apart by three, and a third via 60 connects the first and second metal layers 30, 40.

At this time, the width a of the first terminal portion 31 and the width e of the second terminal portion 39 may be equal to each other from 2.4 mm to 2.6 mm, and a resistance of 50? To 75? Can be maintained.

Here, the width d of the body portion 35 is 5 mm to 5.4 mm when the small-size, low-loss filter is a filter for passing the frequency of the X-band, and the body adjacent to the first and second via columns Vh1 and Vh2 The side length c of the portion 35 is 7 mm to 7.4 mm and the first and second via rows Vh1 and Vh2 are formed and the first and second phase shift portions 33 and 37 and the adjacent body portion 35 Of the first and second via holes Vh1_1 and Vh2_1 included in the first and second via columns Vh1 and Vh2 formed on the body portion 35 is 0.3 mm to 0.5 mm, Is 0.3 mm to 0.5 mm and the distance m between the adjacent first and second via holes Vh1_1 and Vh2_1 is 0.6 mm to 0.8 mm and the third via line Vh formed in the body portion 35 The width k of the third via hole Vh_1 included in the body portion 35 is 0.3 mm to 0.5 mm and the width j of the slit groove formed in the body portion 35 is 0.6 mm to 0.8 mm, (f) is 2.8 mm to 3.0 mm, and the spacing distance g between the slit grooves is 1.8 mm to 2.0 mm .

In addition, the size, i.e., the width (i) and the length (h), of the second metal layer 40 may be 1.0 mm to 1.2 mm and 1.7 mm to 1.9 mm, respectively.

The width d of the body portion 35 is 9 mm to 9.4 mm when the small-sized low-loss filter is a filter for passing the frequency of the Ku-band, and the body adjacent to the first and second via columns Vh1 and Vh2 The side length c of the portion 35 is 10.3 mm to 10.8 mm and the first and second phase shifts Vh1 and Vh2 are formed and the body portion 35 Of the first and second via holes Vh1_1 and Vh2_1 included in the first and second via rows Vh1 and Vh2 formed on the body portion 35 is 1.0 mm to 1.2 mm, Is 0.3 mm to 0.5 mm and the distance m between the adjacent first and second via holes Vh1_1 and Vh2_1 is 0.9 mm to 1.1 mm and the third via line Vh formed in the body portion 35 The width k of the third via hole Vh_1 included in the body portion 35 is 0.3 mm to 0.5 mm and the width j of the slit groove formed in the body portion 35 is 0.6 mm to 0.8 mm, (f) is 5.4 mm to 5.8 mm, and the spacing distance g between the slit grooves is 3.0 mm to 3.4 m m. < / RTI >

In addition, the size, i.e., the width (i) and the length (h), of the second metal layer 40 may be 2.0 mm to 2.4 mm and 2.4 mm to 2.8 mm, respectively.

In other embodiments, the size of the first and second metal layers 30 and 40 may be different depending on the band through which the small-sized low-loss filter is passed, that is, the X-band or Ku-band.

That is, since the inductance value and the capacitance value of the second metal layer 40 vary depending on the size, i.e., the transverse length and the longitudinal length, the resonant band of the filter can be varied.

FIG. 7 is a graph showing return loss according to the size of the second metal layer shown in FIG. 2, and FIG. 8 is a graph illustrating return loss according to the length of the third via shown in FIG.

Referring to FIG. 7, the second metal layer 40 of the small-sized low-loss filter can vary the resonance band according to the lateral length P-w and the vertical length P-w.

The second metal layer 40 shown in FIG. 7 has a width Pw and a length Pw equal to each other. The second metal layer 40 has a width Pw and a length Pw, The larger the resonance frequency is, the smaller the resonance frequency is.

For example, when the width Pw and the length Pw of the second metal layer 40 are 0.5 mm, the resonance band is 13 GHz to 14 GHz, the width Pw of the second metal layer 40, When the vertical length (Pw) is 1.8 mm, the resonance band is 7 GHz to 8 GHz.

Referring to FIG. 8, the third via 60 of the small, low-loss filter may vary the resonance band according to the length Via_z connecting the first and second metal layers 30 and 40.

7, the length Via_z of the third via 60 varies the resonance band to be equal to the lateral length Pw and the longitudinal length Pw of the second metal layer 40 have.

The third via 60 has a lower resonance band as the length Via_z becomes longer and the resonance band becomes lower as the lateral length P-w and the longitudinal length P-w of the second metal layer 40 become longer.

For example, when the length Via_z of the third via 60 is 0.5 mm, the resonance band is 12 GHz to 13 GHz, and when the length Via_z of the third via 60 is 1.5 mm, the resonance band is 3 GHz to 4 GHz.

That is, as shown in FIGS. 7 and 8, the second metal layer 40 and the third vias 60 have an advantage in that it is easy to fabricate a filter capable of passing a desired frequency by adjusting the size.

FIG. 9 is a graph showing return loss according to a change in dielectric constant of the first dielectric layer shown in FIG. 2, and FIG. 10 is a graph showing return loss according to change in dielectric constant of the second dielectric layer shown in FIG.

9 and 10 are graphs of experiments performed with a filter used in an X-band. In the case of a filter used in a Ku-band, the dielectric constants of the first and second dielectric layers 22 and 24 may be different from those described later , But does not limit it.

That is, FIG. 9 is a graph showing the relationship between the dielectric loss (permittivity) of the first dielectric layer 22 and the experimentally measured dielectric loss tangent of the first dielectric layer 22 varied by permittivity of 3, 3.5, and 4 in a state where permittivity of the second dielectric layer 24 is fixed by a Rosers substrate of 3.55. .

10 shows the permittivity of the second dielectric layer 24 varied to 3, 3.5 and 4 in a state where the dielectric constant of the first dielectric layer 22 is fixed by a Rosers substrate of 3.55, And the reflection loss is experimentally measured.

9 and 10, the first and second dielectric layers 22 and 24 have a dielectric constant of 6.4 GHz to 8 GHz, which is easy to pass through the X-band (7.3 to 7.8 GHz) It can be seen that the return loss at GHz is the lowest, resulting in a resonance band of 6.8 GHz to 8 GHz.

FIG. 11 is a graph showing frequency characteristics in an X-band using a small-sized low-loss filter according to an embodiment, and FIG. 12 is a graph showing frequency characteristics in a Ku-band using a small-sized low-loss filter according to an embodiment.

FIG. 11 shows frequency characteristics using an X-band small-loss low-pass filter. Harmonic characteristics do not occur at a multiplication frequency, so that it is possible to prevent adverse effects on other bands. Experimental results show that X-band (7.2-7.9 GHz) It can be confirmed that the reflection loss characteristic of -10 dB or less is obtained.

Fig. 12 shows frequency characteristics using a Ku-band small-loss low-pass filter. As a result of the experiment, it is confirmed that the return loss characteristic is -10 dB or less at Ku-Band (12.25-12.75 GHz).

13 is a view showing an electric field distribution of a small-size, low-loss filter according to an embodiment.

Referring to FIG. 13, the small-sized low-loss filter shows an electric field distribution output to the second terminal portion 39 in accordance with a signal (frequency) input to the first terminal portion 31.

Here, the small-size, low-loss filter has an advantage in that the first and second vias 50 form an electric field wall to prevent the generated electric field from being diverted to the outside, thereby increasing the reception sensitivity to the input signal .

FIG. 14 is a graph showing energy and propagation direction of a small-sized low-loss filter according to an embodiment.

Referring to FIG. 14, since a small-sized low-pass filter is miniaturized by using the CRLH left-hand rule, propagation direction of the propagation due to the energy direction and the phase change must exhibit reverse phase, that is, reverse-ward wave characteristics that proceed inversely.

As shown in Figs. 14 (a) to 14 (g), when the energy traveling direction is the first direction v1, the small-sized low-pass filter has a signal traveling direction of 0 degree, 60 degrees, 120 degrees, 180 degrees, 240 Which is opposite to the first direction v1 which is the energy advancing direction in the second direction v2 from the second terminal portion 39 to the first terminal portion 31 when the phase of the first terminal portion 31 is changed, (electric wave) direction is formed by the electric field v2.

It can be verified that the LH characteristic is satisfied through the back-ward wave characteristic flowing from the second terminal portion 39 to the first terminal portion 31 as the electric field distribution in the second metal layer 40 changes in phase.

On the contrary, the small-size, low-loss filter can proceed in the first direction (v1) in the same way as the energy traveling direction and the electric field traveling direction according to the RH characteristics, but is not limited thereto.

It is to be understood that the present invention is not limited to these embodiments, and all elements constituting the embodiment of the present invention described above are described as being combined or operated in one operation. That is, within the scope of the present invention, all of the components may be selectively coupled to one or more of them.

Furthermore, all terms including technical or scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, unless otherwise defined in the Detailed Description. Commonly used terms, such as predefined terms, should be interpreted to be consistent with the contextual meanings of the related art, and are not to be construed as ideal or overly formal, unless expressly defined to the contrary.

It will be apparent to those skilled in the art that various modifications, substitutions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. will be. Therefore, the embodiments disclosed in the present invention and the accompanying drawings are intended to illustrate and not to limit the technical spirit of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments and the accompanying drawings . The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

10: ground layer 20: dielectric layer
30: first metal layer 40: second metal layer
50: Via 1, 2 Via 60: Via 3

Claims (24)

A ground layer;
A dielectric layer disposed on the ground layer;
A first metal layer disposed on the dielectric layer and connected via first and second vias disposed parallel to the ground layer; And
And a second metal layer disposed within the dielectric layer and connected with the first metal layer and a third via,
Wherein,
A first dielectric layer disposed on the ground layer;
A second dielectric layer disposed on the first dielectric layer; And
And an adhesive layer disposed between the first and second dielectric layers. The method according to claim 1,
At least one of the ground layer, the first and second metal layers,
A small, low loss filter comprising at least one of copper, silver, aluminum and gold. delete The method according to claim 1,
Wherein the first dielectric layer comprises:
Wherein the second dielectric layer comprises the same dielectric as the second dielectric layer. The method according to claim 1,
The dielectric constant of the first dielectric layer is,
Wherein the dielectric constant of the second dielectric layer is 1 to 1.25 times the dielectric constant of the second dielectric layer. The method according to claim 1,
The thickness of the first dielectric layer may be,
Wherein the thickness of the second dielectric layer is 1 to 2 times the thickness of the second dielectric layer. The method according to claim 1,
Between the first and second dielectric layers,
Small, Lossy Filters with Cavities. delete The method according to claim 1,
Between the first and second dielectric layers,
And the second metal layer is disposed. The method according to claim 1,
Wherein the first metal layer comprises:
First and second terminal portions;
A second via line in which the first via is arranged between the first and second terminal portions, a second via line parallel to the first via line and in which the second via is arranged, and a second via line between the first and second via lines, A body portion having a third via-hole in which two vias are disposed; And
And a phase shifter for shifting the phase of the input signal and the output signal between each of the first and second terminal portions and the body portion. 11. The method of claim 10,
Wherein the first and second terminal portions
Small, low-loss filter with a transmission line of 50Ω to 75Ω. The method of claim 10,
Wherein at least one of the first and second terminal portions has a width,
A small, low loss filter with a diameter of 2.4 mm to 2.6 mm. 11. The method of claim 10,
Wherein the first and second terminal portions
And a small-sized low-loss filter formed symmetrically with respect to the center of the first and second via columns. 11. The method of claim 10,
The first via-
And a plurality of first via holes through which the first vias are arranged,
The second via-
And a plurality of second via holes through which the second vias are arranged,
The width of at least one of the first and second via-
Small, low-loss filter with a pitch of 0.3 mm to 1.1 mm. 15. The method of claim 14,
Wherein a distance between adjacent ones of the plurality of first via holes
A small, low loss filter having a diameter of 0.6 mm to 1.6 mm. 11. The method of claim 10,
The third via-
At least two third via holes,
The width of the third via-
A small, low loss filter having a diameter of 0.2 mm to 0.5 mm. 11. The method of claim 10,
The third via-
At least two third via holes,
The body portion
And a slit groove is formed between adjacent third via holes among the at least two third via holes. 17. The method of claim 17,
The slit-
And first and second slit grooves spaced apart from each other,
Wherein a distance between the first and second slit grooves
Small, low-loss filter with 1.6 mm to 3.5 mm. 11. The method of claim 10,
The body portion
A first body connected to the first terminal portion; And
And a second body spaced from the first body and connected to the second terminal. 20. The method of claim 19,
The body portion
And a third body disposed between the first and second bodies and spaced apart from the first and second bodies. The method according to claim 1,
Wherein the second metal layer comprises:
And a small-sized low-loss filter superimposed on the first metal layer. The method according to claim 1,
The thickness of the second metal layer may be,
0.0 > mm < / RTI > to 0.04 mm. The method according to claim 1,
The length of the third via may be,
Wherein the length of the first and second vias is 0.6 to 0.7 times the length of any one of the first and second vias. The method according to claim 1,
Wherein the second metal layer comprises:
A first metal portion; And
And a second metal part spaced apart from the first metal part,
The size of the first metal part may be,
And a size of the second metal portion is 1 to 1.2 times the size of the second metal portion.

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