CN104659451A - Four-mode band-pass filter based on 1/3 equilateral triangular substrate integrated resonator - Google Patents
Four-mode band-pass filter based on 1/3 equilateral triangular substrate integrated resonator Download PDFInfo
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- CN104659451A CN104659451A CN201510068033.4A CN201510068033A CN104659451A CN 104659451 A CN104659451 A CN 104659451A CN 201510068033 A CN201510068033 A CN 201510068033A CN 104659451 A CN104659451 A CN 104659451A
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- 239000002184 metal Substances 0.000 claims abstract description 18
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- 238000005516 engineering process Methods 0.000 description 6
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Abstract
The invention discloses a four-mode band-pass filter based on a 1/3 equilateral triangular substrate integrated resonator. The four-mode band-pass filter comprises a resonator cavity body, an elliptic metalized through hole and two microstrip lines. The resonator cavity body comprises a top metal layer, a dielectric substrate and a bottom metal layer in sequence from top to bottom, the microstrip lines are connected with the resonator cavity body respectively to form the complete resonator, and the elliptic metalized through hole is formed in the resonator. The four-mode band-pass filter is simple in structure, easy to machine, wide in working bandwidth and good in electric performance, and solves a conflict between expansion of a frequency range of the filter and more difficulties in industrial machining.
Description
Technical field
The invention belongs to millimeter-wave technology field, particularly based on four modular belt bandpass filters of 1/3 equilateral triangle substrate integrated resonator.
Background technology
In Modern wireless communication, microwave frequency band communication system traffic is various, and frequency resource is very nervous, and future communication technologies is towards more high band--millimeter wave future development.Filter, as the part for separating of signal, is one of key component in wireless communication system.The features such as the high quality factor that triangle substrate integrated resonator has, low insertion loss, compact conformation, high power capacity, have a wide range of applications in modern communications.And improving constantly along with frequency range, the size of millimetric wave device will constantly reduce.When the design size of millimetric wave device narrows down to some degree, due to the limitation of industrial processing technology, cannot process accurately.How to improve the frequency range of filter, and industrial processing technology accurately can be processed now, become the problem that this field needs to solve day by day.
Summary of the invention
In order to solve the technical problem that above-mentioned background technology proposes, the present invention aims to provide the four modular belt bandpass filters based on 1/3 equilateral triangle substrate integrated resonator, solves filter frequency range and to increase and industrial processes becomes contradiction between difficulty.
In order to realize above-mentioned technical purpose, technical scheme of the present invention is:
Based on four modular belt bandpass filters of 1/3 equilateral triangle substrate integrated resonator, comprise resonator cavities, oval metal through hole and 2 microstrip lines, described resonator cavities comprises the top layer metallic layer be parallel to each other from top to bottom successively, dielectric substrate and bottom metal layer, described top layer metallic layer, dielectric substrate and bottom metal layer are the plane quadrilateral of congruence mutually, described plane quadrilateral comprises the first limit, Second Edge, 3rd limit and the 4th limit, the angle of the first limit and Second Edge is 60 °, 3rd limit is perpendicular to Second Edge, 4th limit is perpendicular to the first limit, the angle on the 3rd limit and the 4th limit is 120 °, and the first limit and Second Edge isometric, 3rd limit and the 4th limit isometric, dielectric substrate evenly to arrange along its first limit and Second Edge the circular metalized through hole of two row, two of circular metalized through hole sides are had as electric wall in four sides of resonator cavities, all the other two sides are as magnetic wall, described two microstrip lines arrange along the edge of two magnetic walls respectively and intersect at the junction of two magnetic walls, and described oval metal through hole is located on aforementioned dielectric substrate.
Wherein, the impedance of above-mentioned two microstrip lines is 50 ohm.
Wherein, above-mentioned four modular belt bandpass filters are mirror symmetrical structure.
Wherein, above-mentioned bottom metal layer is etched with one group of defect ground structure.
Wherein, above-mentioned defect ground structure comprises 3 slotted lines be parallel to each other, and the two ends of every bar slotted line are arrow shaped.
Adopt the beneficial effect that technique scheme is brought:
(1) the present invention utilizes the coupling of 1/3 equilateral triangle substrate integrated resonator, four mode, and increase the main mould frequency that oval metal through hole changes resonator on the resonator, make resonator become filter, improve filter range, and pass band width is large;
(2) primary structure of the present invention is exactly a 1/3 equilateral triangle substrate integrated resonator, simple and compact for structure, is easy to industrial processes.
Accompanying drawing explanation
Fig. 1 is the structural representation of resonator cavities in the present invention.
Fig. 2 is the three-dimensional topographical schematic diagram of resonator cavities in the present invention.
Fig. 3 is the structural representation of resonator in the present invention.
Fig. 4 is the structural representation of the present invention four modular belt bandpass filter.
Fig. 5 is the S parameter simulation waveform figure of resonator in the present invention.
Fig. 6 is the S parameter simulation waveform figure of the present invention four modular belt bandpass filter.
Fig. 7 is defect ground structure schematic diagram in the present invention.
Fig. 8 is the structural representation of the present invention with defect ground structure four modular belt bandpass filter.
Fig. 9 is the S parameter simulation waveform figure of the present invention with defect ground structure four modular belt bandpass filter.
Label declaration: 1, top layer metallic layer; 2, dielectric substrate; 3, circular metalized through hole; 4, bottom metal layer.
Embodiment
Below with reference to accompanying drawing, technical scheme of the present invention is described in detail.
Elementary cell of the present invention is a 1/3 equilateral triangle substrate integrated resonator, and this resonator splits by from an equilateral-triangle resonance cavity in fact, is centrally split to the vertical line section on three limits respectively by equilateral-triangle resonance cavity.
Based on four modular belt bandpass filters of 1/3 equilateral triangle substrate integrated resonator, comprise resonator cavities, oval metal through hole and 2 microstrip lines.As depicted in figs. 1 and 2, described resonator cavities comprises the top layer metallic layer 1 be parallel to each other from top to bottom successively, dielectric substrate 2 and bottom metal layer 4, described top layer metallic layer 1, dielectric substrate 2 and bottom metal layer 4 are the plane quadrilateral of congruence mutually, described plane quadrilateral comprises the first limit, Second Edge, 3rd limit and the 4th limit, the angle of the first limit and Second Edge is 60 °, 3rd limit is perpendicular to Second Edge, 4th limit is perpendicular to the first limit, the angle on the 3rd limit and the 4th limit is 120 °, and the first limit and Second Edge isometric, 3rd limit and the 4th limit isometric, dielectric substrate 2 evenly to arrange along its first limit and Second Edge the circular metalized through hole 3 of two row.Two sides of circular metalized through hole 3 are had as electric wall in four sides of resonator cavities, all the other two sides are as magnetic wall, described two microstrip lines arrange along the edge of two magnetic walls respectively and intersect at the junction of two magnetic walls, article two, microstrip line and resonator cavities form a complete resonator jointly, in the present embodiment, article two, the impedance of microstrip line is 50 ohm, and these two microstrip lines are respectively as the input of resonator and output, and its structure as shown in Figure 3.
Above-mentioned resonator comprises four patterns
tM 101mould,
tM 201mould,
tM 102mould and
tM 303mould, as shown in Figure 4, the dielectric substrate of resonator is provided with oval metal through hole, and it act as the resonance frequency improving TM101 mould in former resonator, makes
tM 101mould and
tM 201mould,
tM 102mould,
tM 303mould produces coupling respectively, and then forms a band pass filter.Fig. 5 and Fig. 6 is respectively the S parameter simulation waveform figure of resonator and four modular belt bandpass filters, its abscissa is frequency (unit: GHz), ordinate is S parameter (unit: decibel), solid line (Simulated S21) and dotted line (Simulated S11) represent the relation of the relation of reflection of electromagnetic wave coefficient and frequency, electromagnetic transmission coefficient and frequency respectively, comparison diagram 5 and Fig. 6 visible
tM 101the resonance frequency of mould improves a lot, and
tM 201mould,
tM 102mould and
tM 303mould there occurs coupling.In the present embodiment, whole four modular belt bandpass filters are mirror symmetrical structure.
The schematic diagram of defect ground structure in the present invention as shown in Figure 7, this defect ground structure comprises the slotted line of the double-head arrow shape that 3 are parallel to each other, use the object of this defect ground structure to be in order to more higher mode in rejects trap, thus reach the effect improving band external characteristic.Fig. 8 is the structural representation with defect ground structure four modular belt bandpass filter, Fig. 9 is its S parameter simulation waveform figure, by Tu Ke get, the centre frequency of this band pass filter is 20.01GHz,-5dB bandwidth is 14.55GHz ~ 27.52GHz, in-band insertion loss is about 2.2dB, and return loss is greater than 13dB, illustrates that this performance of filter is good.
Above embodiment is only and technological thought of the present invention is described, can not limit protection scope of the present invention with this, and every technological thought proposed according to the present invention, any change that technical scheme basis is done, all falls within scope.
Claims (5)
1. based on four modular belt bandpass filters of 1/3 equilateral triangle substrate integrated resonator, it is characterized in that: comprise resonator cavities, oval metal through hole and 2 microstrip lines, described resonator cavities comprises the top layer metallic layer be parallel to each other from top to bottom successively, dielectric substrate and bottom metal layer, described top layer metallic layer, dielectric substrate and bottom metal layer are the plane quadrilateral of congruence mutually, described plane quadrilateral comprises the first limit, Second Edge, 3rd limit and the 4th limit, the angle of the first limit and Second Edge is 60 °, 3rd limit is perpendicular to Second Edge, 4th limit is perpendicular to the first limit, the angle on the 3rd limit and the 4th limit is 120 °, and the first limit and Second Edge isometric, 3rd limit and the 4th limit isometric, dielectric substrate evenly to arrange along its first limit and Second Edge the circular metalized through hole of two row, two of circular metalized through hole sides are had as electric wall in four sides of resonator cavities, all the other two sides are as magnetic wall, described two microstrip lines arrange along the edge of two magnetic walls respectively and intersect at the junction of two magnetic walls, and described oval metal through hole is located on aforementioned dielectric substrate.
2., according to claim 1 based on four modular belt bandpass filters of 1/3 equilateral triangle substrate integrated resonator, it is characterized in that: the impedance of described two microstrip lines is 50 ohm.
3. according to claim 1 based on four modular belt bandpass filters of 1/3 equilateral triangle substrate integrated resonator, it is characterized in that: described four modular belt bandpass filters are mirror symmetrical structure.
4., according to claim 1 based on four modular belt bandpass filters of 1/3 equilateral triangle substrate integrated resonator, it is characterized in that: described bottom metal layer is etched with one group of defect ground structure.
5. according to claim 4 based on four modular belt bandpass filters of 1/3 equilateral triangle substrate integrated resonator, it is characterized in that: described defect ground structure comprises 3 slotted lines be parallel to each other, and the two ends of every bar slotted line are arrow shaped.
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| CN201510068033.4A CN104659451B (en) | 2015-02-09 | 2015-02-09 | The four modular belt bandpass filters based on 1/3 equilateral triangle substrate integrated resonator |
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| CN201510068033.4A CN104659451B (en) | 2015-02-09 | 2015-02-09 | The four modular belt bandpass filters based on 1/3 equilateral triangle substrate integrated resonator |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006613A (en) * | 2015-07-03 | 2015-10-28 | 中国矿业大学 | Quarter-module substrate integration waveguide band-pass filter with an ellipse defect structure |
| CN105720340A (en) * | 2016-02-19 | 2016-06-29 | 南京邮电大学 | Compact type band-pass filter containing low-frequency transmission zero |
| CN107086338A (en) * | 2016-02-16 | 2017-08-22 | 青岛海尔电子有限公司 | Four mould defects ground formula wave filter |
| CN107086347A (en) * | 2016-02-16 | 2017-08-22 | 青岛海尔电子有限公司 | Four mould defects ground formula resonator |
| CN113314817A (en) * | 2021-05-28 | 2021-08-27 | 南京邮电大学 | Double-layer triangular substrate integrated waveguide filter |
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| CN201178126Y (en) * | 2008-01-11 | 2009-01-07 | 东南大学 | A substrate integration waveguide multi-mode filter based on square high order cavity |
| KR20100097392A (en) * | 2009-02-26 | 2010-09-03 | 광운대학교 산학협력단 | Spurious suppressed substrate integrated waveguide (siw) filter using stepped-impedance resonator (sir) structure |
| CN202259650U (en) * | 2011-10-25 | 2012-05-30 | 电子科技大学 | Highly miniaturized substrate integrated waveguide resonator |
| CN103682533A (en) * | 2013-11-20 | 2014-03-26 | 东南大学 | Microwave and millimeter wave filter |
| KR101407727B1 (en) * | 2013-09-05 | 2014-06-13 | 인천대학교 산학협력단 | Compact low-loss filters with the stacked and SIW structure for satellite communications terminals |
| CN203895577U (en) * | 2014-05-13 | 2014-10-22 | 南京邮电大学 | Band pass filter based on one third equilateral triangle substrate integration waveguide |
| CN104319435A (en) * | 2014-10-20 | 2015-01-28 | 华南理工大学 | Substrate integrated waveguide band-pass filter applied onto WLAN (wireless local area network) system |
-
2015
- 2015-02-09 CN CN201510068033.4A patent/CN104659451B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201178126Y (en) * | 2008-01-11 | 2009-01-07 | 东南大学 | A substrate integration waveguide multi-mode filter based on square high order cavity |
| KR20100097392A (en) * | 2009-02-26 | 2010-09-03 | 광운대학교 산학협력단 | Spurious suppressed substrate integrated waveguide (siw) filter using stepped-impedance resonator (sir) structure |
| CN202259650U (en) * | 2011-10-25 | 2012-05-30 | 电子科技大学 | Highly miniaturized substrate integrated waveguide resonator |
| KR101407727B1 (en) * | 2013-09-05 | 2014-06-13 | 인천대학교 산학협력단 | Compact low-loss filters with the stacked and SIW structure for satellite communications terminals |
| CN103682533A (en) * | 2013-11-20 | 2014-03-26 | 东南大学 | Microwave and millimeter wave filter |
| CN203895577U (en) * | 2014-05-13 | 2014-10-22 | 南京邮电大学 | Band pass filter based on one third equilateral triangle substrate integration waveguide |
| CN104319435A (en) * | 2014-10-20 | 2015-01-28 | 华南理工大学 | Substrate integrated waveguide band-pass filter applied onto WLAN (wireless local area network) system |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006613A (en) * | 2015-07-03 | 2015-10-28 | 中国矿业大学 | Quarter-module substrate integration waveguide band-pass filter with an ellipse defect structure |
| CN107086338A (en) * | 2016-02-16 | 2017-08-22 | 青岛海尔电子有限公司 | Four mould defects ground formula wave filter |
| CN107086347A (en) * | 2016-02-16 | 2017-08-22 | 青岛海尔电子有限公司 | Four mould defects ground formula resonator |
| CN107086338B (en) * | 2016-02-16 | 2019-05-21 | 青岛海尔电子有限公司 | Four mould defects ground formula filter |
| CN105720340A (en) * | 2016-02-19 | 2016-06-29 | 南京邮电大学 | Compact type band-pass filter containing low-frequency transmission zero |
| CN113314817A (en) * | 2021-05-28 | 2021-08-27 | 南京邮电大学 | Double-layer triangular substrate integrated waveguide filter |
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Application publication date: 20150527 Assignee: NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS NANTONG INSTITUTE Co.,Ltd. Assignor: NANJING University OF POSTS AND TELECOMMUNICATIONS Contract record no.: 2018320000057 Denomination of invention: Four mode bandpass filter based on 1/3 equilateral triangle substrate integrated resonator Granted publication date: 20170825 License type: Common License Record date: 20180314 |
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