CN115064851A - Rectangular cavity and round cavity multimode coupled substrate integrated waveguide duplexer - Google Patents
Rectangular cavity and round cavity multimode coupled substrate integrated waveguide duplexer Download PDFInfo
- Publication number
- CN115064851A CN115064851A CN202210849270.4A CN202210849270A CN115064851A CN 115064851 A CN115064851 A CN 115064851A CN 202210849270 A CN202210849270 A CN 202210849270A CN 115064851 A CN115064851 A CN 115064851A
- Authority
- CN
- China
- Prior art keywords
- substrate integrated
- integrated waveguide
- cavity
- circular cavity
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20327—Electromagnetic interstage coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention discloses a substrate integrated waveguide duplexer with multimode coupling of rectangular cavities and circular cavities, in which a rectangular cavity of substrate integrated waveguide positioned in the middle is coupled with a circular cavity of substrate integrated waveguide positioned on the right side by a right coplanar waveguide, a rectangular cavity of substrate integrated waveguide positioned in the middle is coupled with a circular cavity of substrate integrated waveguide positioned on the left side by a left coplanar waveguide, an input microstrip line is arranged on the lower side of the rectangular cavity of substrate integrated waveguide positioned in the middle, a lower channel output microstrip line is arranged on the right side of the circular cavity of substrate integrated waveguide positioned on the right side, and an upper channel output microstrip line is arranged on the left side of the circular cavity of substrate integrated waveguide positioned on the left side, compared with the traditional substrate integrated waveguide duplexer, the invention does not need matching networks such as T-shaped junctions and the like, has simple design and smaller volume, and is suitable for 25.3-26.7GHz frequency bands and 29.3-30.7GHz frequency bands, the method can be applied to the 5G millimeter wave mobile communication system in the frequency band.
Description
Technical Field
The invention relates to the field of microwave passive devices, in particular to a multimode-coupled substrate integrated waveguide duplexer based on rectangular cavities and circular cavities with orthogonal modes.
Background
With the rapid development and the becoming mature of modern wireless communication systems, duplexers, which are important components thereof, have attracted extensive attention and research. The conventional duplexer generally comprises an upper channel filter, a lower channel filter and an intermediate matching network such as a T-junction, and can be classified into two major types, namely a planar structure and a non-planar structure. Planar structures such as microstrip lines, strip lines, and slot lines are frequently used, and non-planar structures are mainly composed of structures such as rectangular waveguides, circular waveguides, and coaxial lines. The planar structure circuit can easily interconnect active and passive etc. structure circuits. However, when the frequency is increased to a wavelength comparable to that of a transmission line, the radiation loss of the planar circuit increases, and the transmission efficiency is lowered, so that the structure is not suitable for operating in the millimeter wave band and cannot constitute a high-Q component. In contrast, non-planar structures have the advantages of low loss, high power capability, etc., but are difficult to integrate effectively with other circuits such as active devices, etc. The substrate integrated waveguide combines the advantages of both waveguide and microstrip lines, such as high Q value, low radiation loss, high power capacity, easy integration and processing with planar circuits, and low cost, so that it has been widely researched and applied.
The substrate integrated waveguide technology is a novel waveguide device with low insertion loss, high quality factor and high power capacity which appears in the last decade, various substrate integrated waveguides realized based on the technologies of PCB, LTCC and the like have the advantages of the traditional metal waveguide and the planar circuit in a passive and active mode, and the production cost and the design complexity have incomparable advantages in the microwave and millimeter wave frequency band.
At present, a 5G microwave millimeter wave communication system which draws wide attention, in particular to a large-scale MIMO system, and a microwave millimeter wave front-end module puts higher requirements on the loss, the size and the processing precision of a circuit. Therefore, miniaturization and high-performance devices or modules have become an important research focus. However, the conventional duplexer is hardly operated in a high frequency band, particularly Ka band, which is affected by the processing accuracy.
Disclosure of Invention
The technical problem is as follows: the invention aims to provide a multimode coupling substrate integrated waveguide duplexer based on rectangular cavities and circular cavities and capable of realizing Ka-band transmission under the existing processing precision condition. The transmission of higher frequency band can be realized under the existing machining precision condition, the high frequency is effectively realized, and the size of the duplexer is greatly reduced and the miniaturization is effectively realized due to the elimination of matching networks such as T-shaped junctions and the like of the traditional duplexer.
The technical scheme is as follows: in order to achieve the purpose, the substrate integrated waveguide duplexer with the multimode coupling of the rectangular cavity and the circular cavity comprises a substrate integrated waveguide rectangular cavity positioned in the middle, a substrate integrated waveguide circular cavity positioned on the right side and a substrate integrated waveguide circular cavity positioned on the left side; the substrate integrated waveguide rectangular cavity located in the middle is coupled with the substrate integrated waveguide circular cavity located on the right side through the right coplanar waveguide, the substrate integrated waveguide rectangular cavity located in the middle is coupled with the substrate integrated waveguide circular cavity located on the left side through the left coplanar waveguide, an input microstrip line is arranged on the lower side of the substrate integrated waveguide rectangular cavity located in the middle, a lower channel output microstrip line is arranged on the right side of the substrate integrated waveguide circular cavity located on the right side, and an upper channel output microstrip line is arranged on the left side of the substrate integrated waveguide circular cavity located on the left side.
The two sides of the substrate integrated waveguide rectangular cavity in the middle are respectively provided with a left coplanar waveguide and a right coplanar waveguide, the lower part of the substrate integrated waveguide rectangular cavity is provided with an input microstrip line, and the periphery of the substrate integrated waveguide rectangular cavity is provided with a circle of first annular metal through holes.
The left side of the substrate integrated waveguide circular cavity on the right side is connected with the right coplanar waveguide, the upper part of the substrate integrated waveguide circular cavity on the right side is provided with a lower channel output microstrip line, the periphery of the substrate integrated waveguide circular cavity on the right side is provided with a circle of third annular metal through holes, and a first metal disturbance through hole and a second metal disturbance through hole are arranged in the circle of metal through holes.
The right side of the substrate integrated waveguide circular cavity on the left side is connected with the left coplanar waveguide, the upper part of the substrate integrated waveguide circular cavity on the left side is provided with an upper channel output microstrip line, the periphery of the substrate integrated waveguide circular cavity on the left side is provided with a circle of second annular metal through holes, and a third type of metal disturbance through holes are arranged in the circle of metal through holes.
The coupling position of the rectangular cavity of the middle substrate integrated waveguide and the circular cavity of the right substrate integrated waveguide is positioned in a right coplanar waveguide region with stronger TE101 mode field intensity and weaker TE201 mode field intensity; the coupling position of the rectangular cavity of the middle substrate integrated waveguide and the circular cavity of the left substrate integrated waveguide is positioned in a left coplanar waveguide area with stronger TE201 mode field intensity and weaker TE101 mode field intensity; by utilizing the mode orthogonality of the TE201 mode and the TE101 mode of the rectangular cavity of the integrated waveguide positioned on the middle substrate, the better isolation between two channels is realized, and a transmission pole is generated to expand the bandwidth.
The lower channel of the duplexer consists of a rectangular cavity of the integrated waveguide positioned on the middle substrate and a circular cavity of the integrated waveguide positioned on the right substrate, and the upper channel of the duplexer consists of a rectangular cavity of the integrated waveguide positioned on the middle substrate and a circular cavity of the integrated waveguide positioned on the left substrate; the multimode coupling topology of the lower channel is formed by coupling a TE101 mode located in a rectangular cavity of the middle substrate integrated waveguide with two TM110 degenerate modes located in a circle of the right substrate integrated waveguide through the right coplanar waveguide; the multimode coupling topology of the upper channel is formed by coupling a TE201 mode located in a rectangular cavity of the middle substrate integrated waveguide with two TM110 degenerate modes located in a circle of the left substrate integrated waveguide.
Where the two modes are coupled is a region, the left and right coplanar waveguides, where each mode extends over a corresponding cavity.
The first metal disturbance through holes comprise a first metal disturbance through hole positioned on the left side of the right substrate integrated waveguide circular cavity and a second metal disturbance through hole positioned on the right side of the right substrate integrated waveguide circular cavity, and the two metal disturbance through holes are symmetrically positioned between the feeder line and the right coplanar waveguide relative to the circle center of the substrate integrated waveguide circular cavity.
The duplexer, wherein, second metal disturbance through-hole include the third metal disturbance through-hole that is located the right side substrate integrated waveguide circular cavity upside and be located the fourth metal disturbance through-hole of right side substrate integrated waveguide circular cavity downside, and this two metal disturbance through-holes are located the symmetrical setting of centre of a circle of right side substrate integrated waveguide circular cavity relatively.
The duplexer, wherein, third metal disturbance through-hole includes the fifth metal disturbance through-hole that is located left side substrate integrated waveguide circular cavity and the sixth metal disturbance through-hole that is located left side substrate integrated waveguide circular cavity right side, and this two metal disturbance through-holes are located the centre of a circle symmetry setting in feeder and the coplanar waveguide outside in left side substrate integrated waveguide circular cavity relatively.
The input microstrip line, the upper channel output microstrip line and the lower channel output microstrip line are all 50 ohms.
Has the advantages that: the invention discloses a multimode coupling substrate integrated waveguide duplexer based on rectangular cavities and circular cavities with orthogonal modes, which can realize transmission of higher frequency band under the existing processing precision condition and effectively realize high frequency. Meanwhile, compared with the traditional duplexer which needs T-shaped junctions and other matching networks, the size of the filter is greatly reduced and the miniaturization is effectively realized under the condition of similar performance. Compared with the traditional multilayer structure, the invention can be realized only by the common PCB process without the multilayer structure, and has simple structure and convenient processing.
Drawings
Fig. 1 is a structural diagram of a substrate integrated waveguide duplexer in an embodiment of the present invention;
fig. 2 is a frequency response graph of a duplexer in an embodiment of the present invention.
The figure shows that: the device comprises an input port 1, an upper channel output port 2, a lower channel output port 3, a microstrip arc bend 4, a duplexer 5, a substrate integrated waveguide rectangular cavity 51 positioned in the middle, a substrate integrated waveguide circular cavity 52 positioned on the right side, a substrate integrated waveguide circular cavity 53 positioned on the left side, a third metal disturbance through hole 6, a first metal disturbance through hole 7, a second metal disturbance through hole 8, a left coplanar waveguide 9, a right coplanar waveguide 10, an input microstrip line 11, an upper channel output microstrip line 12, a lower channel output microstrip line 13, a first annular metal through hole 14, a second annular metal through hole 15, a third annular metal through hole 16, a fifth metal disturbance through hole 61, a sixth metal disturbance through hole 62, a first metal disturbance through hole 71, a second metal disturbance through hole 72, a third metal disturbance through hole 81 and a fourth metal disturbance through hole 82.
Detailed Description
The technical solution of the present invention will be further described with reference to the following detailed description and accompanying drawings.
The specific embodiment discloses a substrate integrated waveguide duplexer based on multimode coupling of rectangular cavities and circular cavities in mode orthogonality, wherein the substrate integrated waveguide duplexer 5 comprises a substrate integrated waveguide rectangular cavity 51 positioned in the middle, a substrate integrated waveguide circular cavity 52 positioned on the right side and a substrate integrated waveguide circular cavity 53 positioned on the left side; the middle substrate integrated waveguide rectangular cavity 51 is coupled with the right substrate integrated waveguide circular cavity 52 through the right coplanar waveguide 10, the middle substrate integrated waveguide rectangular cavity 51 is coupled with the left substrate integrated waveguide circular cavity 53 through the left coplanar waveguide 9, the lower side of the middle substrate integrated waveguide rectangular cavity 51 is provided with an input microstrip line 11, the right side of the right substrate integrated waveguide circular cavity 52 is provided with a lower channel output microstrip line 13, and the left side of the left substrate integrated waveguide circular cavity 53 is provided with an upper channel output microstrip line 12. As shown in fig. 1. The integrated waveguide duplexer comprises a dielectric substrate, wherein an upper metal layer is arranged on the upper surface of the dielectric substrate, a lower metal layer is arranged on the lower surface of the dielectric substrate, and a rectangular substrate integrated waveguide rectangular cavity 51 positioned in the middle, a circular substrate integrated waveguide circular cavity 52 positioned on the right side and a circular substrate integrated waveguide circular cavity 53 positioned on the left side are circumferentially and uniformly distributed with a first annular metal through hole 14, a second annular metal through hole 15 and a third annular metal through hole 16 respectively. An input microstrip line 11 is arranged on the lower side of the substrate integrated waveguide rectangular cavity 51 in the middle, a lower channel output microstrip line 13 is arranged on the right side of the substrate integrated waveguide circular cavity 52 on the right side, and an upper channel output microstrip line 12 is arranged on the left side of the substrate integrated waveguide circular cavity 53 on the left side. The input microstrip line 11, the upper channel output microstrip line 12 and the lower channel output microstrip line 13 are all 50 ohms. The end of the input microstrip line 11 is an input port 1, the end of the lower channel output microstrip line 13 is a second output port 3, and the end of the upper channel output microstrip line 12 is a first output port 2.
As shown in fig. 1, a first type metal disturbance through hole 7, a second type metal disturbance through hole 8 and a third type metal disturbance through hole 6 penetrating through the upper metal layer and the lower metal layer are further provided in the substrate integrated waveguide duplexer 5. The first metal disturbance through hole 7 comprises a first metal disturbance through hole 71 positioned on the left side of the substrate integrated waveguide circular cavity 52 on the right side and a second metal disturbance through hole 72 positioned on the right side of the substrate integrated waveguide circular cavity 52 on the right side, and the two metal disturbance through holes are in mirror symmetry along the diameter of the substrate integrated waveguide circular cavity 52 on the right side and are positioned on the inner sides of the lower channel output microstrip line 13 and the right coplanar waveguide 10; the second metal disturbance through hole 8 comprises a third metal disturbance through hole 81 positioned on the upper side of the right substrate integrated waveguide circular cavity 52 and a fourth metal disturbance through hole 82 positioned on the lower side of the right substrate integrated waveguide circular cavity 52, and the two metal disturbance through holes are in central symmetry along the circle center of the right substrate integrated waveguide circular cavity 52; the third metal disturbing through hole 6 comprises a fifth metal disturbing through hole 61 positioned on the left side of the substrate integrated waveguide circular cavity 53 on the left side and a sixth metal disturbing through hole 62 positioned on the right side of the substrate integrated waveguide circular cavity 53 on the left side, and the two metal disturbing through holes are in mirror symmetry along the diameter of the substrate integrated waveguide circular cavity 53 on the left side and are positioned on the outer sides of the upper channel output microstrip line 12 and the left coplanar waveguide 9. Meanwhile, the first metal disturbance through hole 7 is in mirror symmetry with the second metal disturbance through hole 8.
The relative dielectric constant of the dielectric substrate is 2.2, and the dielectric thickness is 0.254 mm. The overall planar dimensions of the duplexer were 23.8mm by 14.1 mm.
In this embodiment, a signal is input through the input port 1, and the signal passes through the substrate integrated waveguide rectangular cavity 51 located in the middle, the substrate integrated waveguide circular cavity 52 located on the right side and loaded with the first type metal disturbance through hole 7 and the second type metal disturbance through hole 8, and the substrate integrated waveguide circular cavity 53 located on the left side and loaded with the third type metal disturbance through hole 6 from the input microstrip line 11, and after filtering, the lower channel signal is transmitted to the lower channel output microstrip line 13, and is output through the second output port 3, and the upper channel signal is transmitted to the upper channel output microstrip line 12, and is output through the first output port 2.
Fig. 2 is a frequency response curve of the duplexer in this embodiment, in which four solid lines are test result curves, and four dashed curves are simulation result curves, the center frequency of the lower channel of the duplexer in this embodiment is 26GHz, the bandwidth is 1.4GHz, the insertion loss in the lower channel is better than 1.8dB, and the return loss in the pass band is better than 12 dB; the center frequency of the upper channel is 30GHz, the bandwidth is 1.4GHz, the insertion loss in the lower channel is better than 2dB, and the return loss in the pass band is better than 14 dB; the output port isolation is better than 30 dB. The simulation and test results have good consistency.
Claims (10)
1. A substrate integrated waveguide duplexer with multimode coupling of a rectangular cavity and a circular cavity is characterized in that: the substrate integrated waveguide duplexer (5) comprises a substrate integrated waveguide rectangular cavity (51) positioned in the middle, a substrate integrated waveguide circular cavity (52) positioned on the right side and a substrate integrated waveguide circular cavity (53) positioned on the left side; the substrate integrated waveguide rectangular cavity (51) located in the middle is coupled with the substrate integrated waveguide circular cavity (52) located on the right side through the right coplanar waveguide (10), the substrate integrated waveguide rectangular cavity (51) located in the middle is coupled with the substrate integrated waveguide circular cavity (53) located on the left side through the left coplanar waveguide (9), an input microstrip line (11) is arranged on the lower side of the substrate integrated waveguide rectangular cavity (51) located in the middle, a lower channel output microstrip line (13) is arranged on the right side of the substrate integrated waveguide circular cavity (52) located on the right side, and an upper channel output microstrip line (12) is arranged on the left side of the substrate integrated waveguide circular cavity (53) located on the left side.
2. The rectangular cavity and circular cavity multimode-coupled substrate integrated waveguide duplexer according to claim 1, characterized in that: the two sides of the substrate integrated waveguide rectangular cavity (51) positioned in the middle are respectively provided with a left coplanar waveguide (9) and a right coplanar waveguide (10), the lower part of the substrate integrated waveguide rectangular cavity is provided with an input microstrip line (11), and the periphery of the substrate integrated waveguide rectangular cavity is provided with a circle of first annular metal through holes (14).
3. The rectangular cavity and circular cavity multimode coupled substrate integrated waveguide duplexer of claim 1, wherein: the left side of the substrate integrated waveguide circular cavity (52) on the right side is connected with the right coplanar waveguide (10), the upper part of the substrate integrated waveguide circular cavity is provided with a lower channel output microstrip line (13), the periphery of the substrate integrated waveguide circular cavity (52) on the right side is provided with a circle of third annular metal through holes (16), and a first metal disturbance through hole (7) and a second metal disturbance through hole (8) are arranged in the circle of metal through holes.
4. The rectangular cavity and circular cavity multimode coupled substrate integrated waveguide duplexer of claim 1, wherein: the right side of the substrate integrated waveguide circular cavity (53) on the left side is connected with the left coplanar waveguide (9), the upper part of the substrate integrated waveguide circular cavity is provided with an upper channel output microstrip line (12), the periphery of the substrate integrated waveguide circular cavity (53) on the left side is provided with a circle of second annular metal through holes (15), and a third metal disturbance through hole (6) is arranged in the circle of metal through holes.
5. The rectangular cavity and circular cavity multimode coupled substrate integrated waveguide duplexer of claim 1, wherein: the coupling position of the rectangular cavity (51) of the middle substrate integrated waveguide and the circular cavity (52) of the right substrate integrated waveguide is positioned in the region of the right coplanar waveguide (10) with stronger TE101 mode field intensity and weaker TE201 mode field intensity; the coupling position of the rectangular cavity (51) of the middle substrate integrated waveguide and the circular cavity (53) of the left substrate integrated waveguide is positioned in the left coplanar waveguide (9) area with stronger TE201 mode field intensity and weaker TE101 mode field intensity; by utilizing the mode orthogonality of the TE201 mode and the TE101 mode of the rectangular cavity (51) of the integrated waveguide of the middle substrate, the better isolation between two channels is realized, and a transmission pole is generated to expand the bandwidth.
6. The rectangular cavity and circular cavity multimode-coupled substrate integrated waveguide duplexer according to claim 1, characterized in that: the lower channel of the duplexer (5) consists of a rectangular cavity (51) positioned in the middle substrate integrated waveguide and a circular cavity (52) positioned in the right substrate integrated waveguide, and the upper channel of the duplexer (5) consists of a rectangular cavity (51) positioned in the middle substrate integrated waveguide and a circular cavity (53) positioned in the left substrate integrated waveguide; the multimode coupling topology of the lower channel is formed by coupling a TE101 mode located in a middle substrate integrated waveguide rectangular cavity (51) through a right coplanar waveguide (10) and two TM110 degenerate modes located in a right substrate integrated waveguide circular cavity (52); the multimode coupling topology of the upper channel is that a TE201 mode located in a rectangular cavity (51) of the middle substrate integrated waveguide is formed by coupling a left coplanar waveguide (9) and two TM110 degenerate modes located in a left substrate integrated waveguide circle (53).
7. The rectangular cavity and circular cavity multimode coupled substrate integrated waveguide duplexer of claim 3, wherein: the duplexer (5) is characterized in that the first metal disturbance through holes (7) comprise first metal disturbance through holes (71) located on the left side of the right substrate integrated waveguide circular cavity (52) and second metal disturbance through holes (72) located on the right side of the right substrate integrated waveguide circular cavity (52), and the two metal disturbance through holes are symmetrically located between the feeder line (13) and the right coplanar waveguide (10) relative to the circle center of the substrate integrated waveguide circular cavity (52).
8. The rectangular cavity and circular cavity multimode coupled substrate integrated waveguide duplexer of claim 3, wherein: the duplexer (5) is characterized in that the second metal disturbance through hole (8) comprises a third metal disturbance through hole (81) located on the upper side of the right substrate integrated waveguide circular cavity (52) and a fourth metal disturbance through hole (82) located on the lower side of the right substrate integrated waveguide circular cavity (52), and the two metal disturbance through holes are symmetrically arranged relative to the circle center of the right substrate integrated waveguide circular cavity (52).
9. The rectangular cavity and circular cavity multimode coupled substrate integrated waveguide duplexer of claim 4, wherein: the duplexer (5), wherein, third metal disturbance through hole (6) is including being located left side substrate integrated waveguide circular cavity (53) fifth metal disturbance through hole (61) and being located the left side substrate integrated waveguide circular cavity (53) sixth metal disturbance through hole (62) on right side, and the centre of a circle symmetry that these two metal disturbance through holes are located substrate integrated waveguide circular cavity (53) relatively sets up in feeder (12) and left side coplanar waveguide (9) outside.
10. The rectangular cavity and circular cavity multimode coupled substrate integrated waveguide duplexer of claim 5, wherein: the input microstrip line (11), the upper channel output microstrip line (12) and the lower channel output microstrip line (13) are all 50 ohms.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210849270.4A CN115064851A (en) | 2022-07-19 | 2022-07-19 | Rectangular cavity and round cavity multimode coupled substrate integrated waveguide duplexer |
| PCT/CN2023/085819 WO2024016727A1 (en) | 2022-07-19 | 2023-04-02 | Substrate-integrated waveguide duplexer with multi-mode coupling of rectangular cavity and circular cavities |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210849270.4A CN115064851A (en) | 2022-07-19 | 2022-07-19 | Rectangular cavity and round cavity multimode coupled substrate integrated waveguide duplexer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115064851A true CN115064851A (en) | 2022-09-16 |
Family
ID=83206780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210849270.4A Pending CN115064851A (en) | 2022-07-19 | 2022-07-19 | Rectangular cavity and round cavity multimode coupled substrate integrated waveguide duplexer |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115064851A (en) |
| WO (1) | WO2024016727A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024016727A1 (en) * | 2022-07-19 | 2024-01-25 | 东南大学 | Substrate-integrated waveguide duplexer with multi-mode coupling of rectangular cavity and circular cavities |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851974A (en) * | 2006-03-30 | 2006-10-25 | 东南大学 | Common-face wave-guide coupling-substrate integrated wave-guide circular cavity wave-filter |
| CN201174412Y (en) * | 2008-01-11 | 2008-12-31 | 东南大学 | A dual-mode circular high order cavity filter of substrate integration waveguide |
| CA2629035A1 (en) * | 2008-03-27 | 2009-09-27 | Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of Industry, Through The Communications Research Centre Canada | Waveguide filter with broad stopband based on sugstrate integrated waveguide scheme |
| CN109037879B (en) * | 2018-07-10 | 2023-12-01 | 华南理工大学 | Substrate integrated waveguide filter coupler based on orthogonal degenerate mode |
| CN111276781B (en) * | 2020-03-11 | 2021-09-07 | 东南大学 | High-order mode substrate integrated waveguide circular cavity filter based on through hole disturbance |
| CN115064851A (en) * | 2022-07-19 | 2022-09-16 | 东南大学 | Rectangular cavity and round cavity multimode coupled substrate integrated waveguide duplexer |
-
2022
- 2022-07-19 CN CN202210849270.4A patent/CN115064851A/en active Pending
-
2023
- 2023-04-02 WO PCT/CN2023/085819 patent/WO2024016727A1/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024016727A1 (en) * | 2022-07-19 | 2024-01-25 | 东南大学 | Substrate-integrated waveguide duplexer with multi-mode coupling of rectangular cavity and circular cavities |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024016727A1 (en) | 2024-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109462000B (en) | Multi-layer substrate integrated waveguide third-order filtering power divider | |
| CN108539338B (en) | A kind of a quarter mould substrate integral wave guide filter based on notching construction | |
| CN103390784B (en) | Miniaturized substrate integration waveguide duplexer | |
| CN111276781B (en) | High-order mode substrate integrated waveguide circular cavity filter based on through hole disturbance | |
| CN109037879B (en) | Substrate integrated waveguide filter coupler based on orthogonal degenerate mode | |
| WO2024087509A1 (en) | High-order mode substrate integrated waveguide dual-passband circular cavity filter | |
| CN105514547A (en) | Low-pass band-pass five-duplex based on novel frequency separation structure | |
| CN105304985A (en) | Broadband band-pass filter based on seven-mode resonator | |
| CN112332051A (en) | Ultra-wideband filter | |
| WO2024016727A1 (en) | Substrate-integrated waveguide duplexer with multi-mode coupling of rectangular cavity and circular cavities | |
| CN110190371B (en) | Waveguide power divider | |
| CN112993507B (en) | Miniaturized T-shaped branch waveguide broadband power divider | |
| CN106549203B (en) | A kind of conversion circuit of coupled microstrip line to rectangular waveguide | |
| CN111293390A (en) | UIR loaded three-order dual-passband substrate integrated waveguide filter | |
| CN106207323A (en) | Micro-strip and the duplexer of substrate integration wave-guide mixed structure | |
| CN104466316A (en) | 2X wave band defect joint structure-half mode substrate integrated waveguide filter | |
| CN111403861A (en) | UIR loaded three-order dual-passband substrate integrated waveguide filter | |
| CN103337678B (en) | There is the cross-couplings substrate integral wave guide filter of steep side band characteristic | |
| CN112688041B (en) | Multipath cross-coupling millimeter wave filter | |
| CN109301414A (en) | A kind of circular substrate integrated waveguide bandpass filter | |
| CN111697321B (en) | Filter antenna based on half-mode substrate integrated waveguide structure | |
| CN111564683A (en) | Substrate integrated waveguide filter combining one-eighth mode and one-fourth mode | |
| CN113871824A (en) | Multi-mode rectangular resonance-based miniaturized multi-frequency low-insertion-loss dielectric filter module | |
| CN201000914Y (en) | Direct coupling triangle substrate integrated waveguide cavity filter | |
| CN211238454U (en) | UIR loaded three-order dual-passband substrate integrated waveguide filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |