CN115458883B - High-order mode substrate integrated waveguide dual-passband circular cavity filter - Google Patents
High-order mode substrate integrated waveguide dual-passband circular cavity filter Download PDFInfo
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- CN115458883B CN115458883B CN202211331585.6A CN202211331585A CN115458883B CN 115458883 B CN115458883 B CN 115458883B CN 202211331585 A CN202211331585 A CN 202211331585A CN 115458883 B CN115458883 B CN 115458883B
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- 239000000758 substrate Substances 0.000 title claims abstract description 90
- 239000002184 metal Substances 0.000 claims abstract description 56
- 239000010410 layer Substances 0.000 claims abstract description 24
- 230000000149 penetrating effect Effects 0.000 claims abstract description 8
- 239000011229 interlayer Substances 0.000 claims abstract description 4
- 230000009977 dual effect Effects 0.000 claims 1
- 238000010295 mobile communication Methods 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
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Abstract
The invention discloses a high-order mode substrate integrated waveguide double-passband circular cavity filter, which comprises a lower metal layer, a dielectric substrate and an upper metal layer, wherein the interlayer structure of the filter sequentially takes a substrate integrated waveguide circular cavity (3) as a main body, and metal through holes (4) penetrating through the upper metal layer, the dielectric substrate and the lower metal layer are uniformly distributed along the circumferential direction; a second type slotted line (11) is arranged in the middle of the circular cavity of the substrate integrated waveguide, a first type slotted line (10) is arranged between the metal through hole and the second type slotted line (11), a first coplanar waveguide (7) and a second coplanar waveguide are symmetrically arranged in the circular cavity of the substrate integrated waveguide, and a pair of metal perturbation through holes (9) penetrating through the upper metal layer, the dielectric substrate and the lower metal layer are further arranged between the first coplanar waveguide and the second coplanar waveguide (8). The invention has simple structure and convenient processing, can be suitable for higher frequency and can be applied to 5G millimeter wave and 6G mobile communication systems.
Description
Technical Field
The invention relates to the field of microwave passive devices, in particular to a high-order mode substrate integrated waveguide dual-passband circular cavity filter based on a through hole disturbance and slotting structure.
Background
With the rapid development and the increasing maturity of modern wireless communication systems, filters as an important component thereof have also attracted extensive attention and research. However, multi-band transmission is a trend of future mobile communication systems, which makes single-band microwave/rf devices unable to meet the requirements, so multi-band filters are being studied extensively. In the traditional multi-band design, a microstrip structure multi-passband filter is widely designed, but in a millimeter wave frequency band, a passive device of the microstrip structure has the problems of large insertion loss, difficult processing and the like; in addition, the filter with the non-planar structure has the advantages of small loss, large power capacity and the like similar to structures such as rectangular waveguides, coaxial lines and the like, but is difficult to integrate with a planar circuit. Therefore, the substrate integrated waveguide technology solves these problems in the millimeter wave band, and thus is gaining attention.
The substrate integrated waveguide technology is a novel waveguide device with low insertion loss, high quality factor and high power capacity, which appears in the last decade, various substrate integrated waveguides realized based on processes such as PCB and LTCC are passive and active, have the advantages of traditional metal waveguides and planar circuits, and have incomparable advantages in microwave and millimeter wave frequency bands in terms of production cost and design complexity. In order to realize multi-stage transmission response or multiple pass bands, the traditional substrate integrated waveguide filter or the multi-pass band filter often needs to be cascaded with multiple cavities to cause oversized size, and the structure of the high-order mode substrate integrated waveguide based on the through hole disturbance and the slotting structure can maximally utilize the inherent modes in the circular cavity, so that the single cavity is utilized to realize multi-stage and multi-pass band response, the area can be effectively reduced, and the circuit structure is very compact.
With the rapid development of communication systems, particularly 5G microwave millimeter wave communication systems and large-scale MIMO systems, there is a higher requirement for the size of radio frequency circuits, and not only is the size required to be small, but also the requirement for multiple pass bands is additionally proposed. Therefore, miniaturization and multiple pass bands are taken as important research basis for designing filters. However, it is difficult to achieve both miniaturization and multiple pass bands of the filter in the prior art.
Disclosure of Invention
Technical problems: the invention aims to provide a high-order mode substrate integrated waveguide double-passband circular cavity filter based on a through hole disturbance and slotting structure, which meets the requirements of miniaturization and multiple passbands. The closed structure has the characteristics of high quality factor and small loss, and can be applied to higher frequency.
The technical scheme is as follows: the interlayer structure of the high-order mode substrate integrated waveguide dual-passband circular cavity filter is sequentially composed of a lower metal layer, a dielectric substrate and an upper metal layer: the planar structure of the filter takes a substrate integrated waveguide circular cavity as a main body, and metal through holes penetrating through an upper metal layer, a medium substrate and a lower metal layer are uniformly distributed along the circumferential direction of the substrate integrated waveguide circular cavity; a second type slotted line is arranged in the middle of the circular cavity of the substrate integrated waveguide, a first type slotted line is arranged between the metal through hole and the second type slotted line, a first coplanar waveguide and a second coplanar waveguide are symmetrically arranged in the circular cavity of the substrate integrated waveguide, and a pair of metal disturbance through holes penetrating through the upper metal layer, the medium substrate and the lower metal layer are further arranged between the first coplanar waveguide and the second coplanar waveguide.
Wherein,
The metal disturbance through holes comprise a first metal disturbance through hole positioned at the left side of the circular cavity of the substrate integrated waveguide and a second metal disturbance through hole positioned at the right side of the circular cavity of the substrate integrated waveguide, the two metal disturbance through holes are in mirror symmetry along the radius of the circular cavity of the substrate integrated waveguide, and the first coplanar waveguide positioned at the left side of the circular cavity of the substrate integrated waveguide and the second coplanar waveguide positioned at the right side are positioned in an obtuse angle formed by the radius.
The first type of grooving line comprises a left grooving structure positioned on the left side of the circular cavity of the substrate integrated waveguide and a right grooving structure positioned on the right side of the circular cavity of the substrate integrated waveguide, the two grooving structures are arc-shaped structures, the opening direction points to the circle center of the circular cavity of the substrate integrated waveguide along the radius of the circular cavity of the substrate integrated waveguide, and meanwhile, the left grooving structure and the right grooving structure are in mirror symmetry along the radius of the circular cavity of the substrate integrated waveguide.
The second type of slotted line is positioned at the center of the circular cavity of the substrate integrated waveguide, the slotted line is of an arc-shaped structure, the circle center of the slotted line is positioned at the circle center of the circular cavity of the substrate integrated waveguide, and the opening direction points to the metal disturbance through hole direction of the circular cavity of the substrate integrated waveguide.
The first coplanar waveguide on the left lower side of the circular cavity of the substrate integrated waveguide is connected with the input port through the input microstrip line, the second coplanar waveguide on the right lower side of the circular cavity of the substrate integrated waveguide is connected with the output port through the output microstrip line, and the input microstrip line and the output microstrip line are in mirror symmetry along the radius of the circular cavity of the substrate integrated waveguide and form an obtuse angle.
The input microstrip line and the output microstrip line are both 50 ohms.
The beneficial effects are that: compared with the traditional substrate integrated waveguide filter, the high-order mode substrate integrated waveguide dual-passband circular cavity filter can realize multi-order response without multi-order cascading, and meanwhile compared with the traditional dual-passband filter, the dual-passband filter is realized by only one cavity, so that the number of required cavities is greatly reduced, and miniaturization is effectively realized. Meanwhile, compared with the technologies of a multilayer structure, a half mold, a quarter mold, an eighth mold and the like, the invention can be realized only by a common PCB process without the multilayer structure, has the characteristics of high quality factor and small loss for a closed structure, and can be applied to higher frequency.
Drawings
FIG. 1 is a block diagram of a filter in an embodiment of the invention;
Fig. 2 is a graph showing the frequency response of a filter according to an embodiment of the present invention.
The drawings are as follows: the integrated waveguide comprises an input port 1, an output port 2, a substrate integrated waveguide circular cavity 3, a metal through hole 4, an input microstrip line 5, an output microstrip line 6, a first coplanar waveguide 7, a second coplanar waveguide 8, a metal disturbance through hole 9, a first metal disturbance through hole 91, a second metal disturbance through hole 92, a first type slotted line 10, a left slotted structure 101, a right slotted structure 102 and a second type slotted line 11.
Detailed Description
The technical scheme of the invention is further described below with reference to the detailed description and the accompanying drawings.
The high-order mode substrate integrated waveguide dual-passband circular cavity filter is based on a through hole disturbance and grooving structure, and the interlayer structure of the filter is sequentially composed of a lower metal layer, a dielectric substrate and an upper metal layer: the planar structure of the filter takes a substrate integrated waveguide circular cavity 3 as a main body, and metal through holes 4 penetrating through an upper metal layer, a dielectric substrate and a lower metal layer are uniformly distributed along the circumferential direction of the substrate integrated waveguide circular cavity 3; the middle of the circular cavity 3 of the substrate integrated waveguide is provided with a second type slotted line 11, a first type slotted line 10 is arranged between the metal through hole 4 and the second type slotted line 11, the circular cavity 3 of the substrate integrated waveguide is symmetrically provided with a first coplanar waveguide 7 and a second coplanar waveguide 8, and a pair of metal disturbance through holes 9 penetrating through the upper metal layer, the dielectric substrate and the lower metal layer are also arranged between the first coplanar waveguide 7 and the second coplanar waveguide 8.
The metal disturbance through hole 9 includes a first metal disturbance through hole 91 located at the left side of the circular cavity of the substrate integrated waveguide and a second metal disturbance through hole 92 located at the right side of the circular cavity of the substrate integrated waveguide, the two metal disturbance through holes are mirror symmetrical along the diameter of the circular cavity of the substrate integrated waveguide, and the first coplanar waveguide located at the left side of the circular cavity of the substrate integrated waveguide and the second coplanar waveguide located at the right side form an included angle inside, so that the frequencies of a pair of mutually orthogonal degenerate modes TM110 and a pair of mutually orthogonal degenerate modes TM210 can be respectively distinguished, and the frequency sequences of the two modes of the mutually orthogonal degenerate modes TM210 are exchanged, so that the transmission zero between TM210 and TM020 is transferred to a low frequency, and a second passband is formed.
The first slotted line 10 comprises a left slotted structure positioned at the left side of the circular cavity of the substrate integrated waveguide and a right slotted structure positioned at the right side of the circular cavity of the substrate integrated waveguide, the two slotted structures are arc-shaped structures, the opening direction points to the center of the circle along the radius of the circular cavity of the substrate integrated waveguide, and meanwhile, the two slotted structures are mirror symmetry along the radius of the circular cavity of the substrate integrated waveguide, so that the low-frequency modes of the degenerate mode TM110 and the degenerate mode TM210 which are mutually orthogonal can be respectively adjusted, and the bandwidths of the two pass bands can be adjusted.
The second slotted line 11 is located at the center of the circular cavity of the substrate integrated waveguide, the slotted structure is in an arc structure, the center of the slotted structure is located at the center of the circular cavity of the substrate integrated waveguide, and the opening direction points to the lower part of the circular cavity of the substrate integrated waveguide, so that the high-frequency mode and the TM020 mode of the mutually-orthogonal degenerate mode TM110 can be simultaneously regulated, and the adjustment of the bandwidths of the two pass bands is more flexible.
The left lower side of the circular cavity of the substrate integrated waveguide is connected with an input microstrip line through a first coplanar waveguide, the right lower side of the circular cavity of the substrate integrated waveguide is connected with an output microstrip line through a second coplanar waveguide, and the two microstrip lines are in mirror symmetry along the diameter of the circular cavity of the substrate integrated waveguide and form an obtuse angle.
The input microstrip line and the output microstrip line are both 50 ohms, the end part of the input microstrip line is an input port, and the end part of the output microstrip line is an output port.
The relative permittivity of the dielectric substrate was 2.2, and the dielectric thickness was 0.254mm. The overall planar dimensions of the filter were 6.5mm by 6.5mm.
In this embodiment, a signal is input through the input port 1, and is input from the input microstrip line 5 to the substrate integrated waveguide circular cavity 3 loaded with the metal disturbance through hole 9, the first type slotted line 10 and the second type slotted line 11, and the filtered signal is transmitted to the output microstrip line 6 and then output through the output port 2.
Fig. 2 is a frequency response curve of the dual-passband filter in the present embodiment, where two solid lines are simulation result curves, two dashed curves are test result curves, a center frequency of the dual-passband filter in the present embodiment is 42/60GHz, a bandwidth is 3.3/5.2GHz, an insertion loss in a passband is better than 1.1/2.1dB, a return loss in the passband is better than 17/11.5dB, and simulation and test results have good consistency.
Claims (4)
1. The utility model provides a high order mode substrate integrated waveguide dual passband circular cavity filter which characterized in that: the interlayer structure of the filter is sequentially composed of a lower metal layer, a dielectric substrate and an upper metal layer: the planar structure of the filter takes a substrate integrated waveguide circular cavity (3) as a main body, and metal through holes (4) penetrating through an upper metal layer, a medium substrate and a lower metal layer are uniformly distributed along the circumferential direction of the substrate integrated waveguide circular cavity (3); a second type slot line (11) is arranged in the middle of the substrate integrated waveguide circular cavity (3), a first type slot line (10) is arranged between the metal through hole (4) and the second type slot line (11), a first coplanar waveguide (7) and a second coplanar waveguide (8) are symmetrically arranged in the substrate integrated waveguide circular cavity (3), and a pair of metal disturbance through holes (9) penetrating through the upper metal layer, the medium substrate and the lower metal layer are also arranged between the first coplanar waveguide (7) and the second coplanar waveguide (8);
The metal disturbance through holes (9) comprise a first metal disturbance through hole (91) positioned at the left side of the substrate integrated waveguide circular cavity (3) and a second metal disturbance through hole (92) positioned at the right side of the substrate integrated waveguide circular cavity (3), the two metal disturbance through holes are mirror symmetry along the radius of the substrate integrated waveguide circular cavity (3), and the first coplanar waveguide (7) positioned at the left side of the substrate integrated waveguide circular cavity (3) and the second coplanar waveguide (8) positioned at the right side are positioned in an obtuse angle formed by the radius;
the first slotted line (10) comprises a left slotted structure (101) positioned at the left side of the circular cavity (3) of the substrate integrated waveguide and a right slotted structure (102) positioned at the right side of the circular cavity (3) of the substrate integrated waveguide, wherein the two slotted structures are arc-shaped structures, the opening direction of the two slotted structures points to the center of a circle along the radius of the circular cavity (3) of the substrate integrated waveguide, and meanwhile, the left slotted structure (101) and the right slotted structure (102) are in mirror symmetry along the radius of the circular cavity (3) of the substrate integrated waveguide.
2. The high-order mode substrate integrated waveguide dual-passband circular cavity filter of claim 1, wherein: the second type of slotted line (11) is positioned at the center of the circular cavity (3) of the substrate integrated waveguide, the slotted line is of an arc-shaped structure, the circle center of the slotted line is positioned at the circle center of the circular cavity (3) of the substrate integrated waveguide, and the opening direction points to the direction of a metal disturbance through hole (9) of the circular cavity (3) of the substrate integrated waveguide.
3. The high-order mode substrate integrated waveguide dual-passband circular cavity filter of claim 1, wherein: the first coplanar waveguide (7) at the left lower side of the substrate integrated waveguide circular cavity (3) is connected with the input port (1) through the input microstrip line (5), the second coplanar waveguide (8) at the right lower side is connected with the output port (2) through the output microstrip line (6), and the input microstrip line (5) and the output microstrip line (6) are in mirror symmetry along the radius of the substrate integrated waveguide circular cavity (3) and form an obtuse angle.
4. The high-order mode substrate integrated waveguide dual-passband circular cavity filter of claim 3, wherein: the input microstrip line (5) and the output microstrip line (6) are both 50 ohms.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211331585.6A CN115458883B (en) | 2022-10-28 | 2022-10-28 | High-order mode substrate integrated waveguide dual-passband circular cavity filter |
| PCT/CN2023/085820 WO2024087509A1 (en) | 2022-10-28 | 2023-04-02 | High-order mode substrate integrated waveguide dual-passband circular cavity filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211331585.6A CN115458883B (en) | 2022-10-28 | 2022-10-28 | High-order mode substrate integrated waveguide dual-passband circular cavity filter |
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| CN115458883A CN115458883A (en) | 2022-12-09 |
| CN115458883B true CN115458883B (en) | 2024-08-09 |
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| CN115458883B (en) * | 2022-10-28 | 2024-08-09 | 东南大学 | High-order mode substrate integrated waveguide dual-passband circular cavity filter |
| CN116315553B (en) * | 2023-04-10 | 2024-04-12 | 电子科技大学 | Transition structure suitable for substrate integrated waveguide-microstrip |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108539338A (en) * | 2018-05-21 | 2018-09-14 | 东南大学 | A kind of a quarter mould substrate integral wave guide filter based on notching construction |
| CN109301414A (en) * | 2018-09-26 | 2019-02-01 | 曲阜师范大学 | A kind of circular substrate integrated waveguide bandpass filter |
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| CA2629035A1 (en) * | 2008-03-27 | 2009-09-27 | Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of Industry, Through The Communications Research Centre Canada | Waveguide filter with broad stopband based on sugstrate integrated waveguide scheme |
| IT201600102172A1 (en) * | 2016-10-12 | 2018-04-12 | Rf Microtech S R L | Bandpass filter reconfigurable in e-plane type guide |
| CN208622911U (en) * | 2018-08-21 | 2019-03-19 | 南京信息工程大学 | A kind of novel three moulds SIW resonant cavity filter |
| CN110350273B (en) * | 2019-04-19 | 2020-11-17 | 江南大学 | Dual-passband millimeter wave substrate integrated waveguide filter |
| CN111276781B (en) * | 2020-03-11 | 2021-09-07 | 东南大学 | High-order mode substrate integrated waveguide circular cavity filter based on through hole disturbance |
| CN115458883B (en) * | 2022-10-28 | 2024-08-09 | 东南大学 | High-order mode substrate integrated waveguide dual-passband circular cavity filter |
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2022
- 2022-10-28 CN CN202211331585.6A patent/CN115458883B/en active Active
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108539338A (en) * | 2018-05-21 | 2018-09-14 | 东南大学 | A kind of a quarter mould substrate integral wave guide filter based on notching construction |
| CN109301414A (en) * | 2018-09-26 | 2019-02-01 | 曲阜师范大学 | A kind of circular substrate integrated waveguide bandpass filter |
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| WO2024087509A1 (en) | 2024-05-02 |
| CN115458883A (en) | 2022-12-09 |
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