CN108832242B - Miniaturized W-band MEMS gap waveguide band-pass filter - Google Patents
Miniaturized W-band MEMS gap waveguide band-pass filter Download PDFInfo
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- CN108832242B CN108832242B CN201810580657.8A CN201810580657A CN108832242B CN 108832242 B CN108832242 B CN 108832242B CN 201810580657 A CN201810580657 A CN 201810580657A CN 108832242 B CN108832242 B CN 108832242B
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- slot waveguide
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 65
- 230000008878 coupling Effects 0.000 claims abstract description 42
- 238000010168 coupling process Methods 0.000 claims abstract description 42
- 238000005859 coupling reaction Methods 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 9
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 238000001465 metallisation Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000003780 insertion Methods 0.000 abstract description 7
- 230000037431 insertion Effects 0.000 abstract description 7
- 238000010923 batch production Methods 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 2
- 238000004088 simulation Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Optical Integrated Circuits (AREA)
- Waveguides (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention discloses a miniaturized W-band MEMS gap waveguide band-pass filter, which comprises a top silicon wafer and a bottom silicon wafer, wherein the top silicon wafer and/or the bottom silicon wafer are/is etched by an MEMS process and then electroplated to form a gap waveguide structure, a cascade coupling resonant cavity is formed in the gap waveguide structure, and a coupling window is also etched on the top silicon wafer and/or the bottom silicon wafer. The filter designed based on the MEMS slot waveguide concept has the advantages of miniaturization, light weight, low insertion loss, small frequency offset and suitability for large-scale batch production, fills up the application blank of the slot waveguide band-pass filter in a W wave band, can be used as a W wave band surface mount component, improves the integration level of a W wave band system through coupling of planar transmission lines, and has extremely high engineering application value.
Description
Technical Field
The invention relates to electromagnetic field and microwave technology, in particular to a miniaturized W-band MEMS slot waveguide band-pass filter.
Background
The W-band-pass filter is mainly applied to W-band radars and communication transceivers, can inhibit emission spurious emissions in a transmitter, and can be placed in front of a low-noise amplifier in a receiver for pre-selection filtering to inhibit electromagnetic interference of adjacent frequency bands.
Currently, conventionally used W-band pass filters are mainly classified into two types. The metal cavity band-pass filter based on machining is high in machining precision requirement, high in cost, difficult to ensure batch consistency and difficult to realize large-scale batch production; the band-pass filter based on the waveguide E-plane diaphragm has high requirements on circuit processing precision and waveguide mounting groove processing precision in the diaphragm, and meanwhile, the mounting process of the diaphragm is difficult, and large-scale batch production is difficult.
In recent years, a plurality of band-pass filters with W wave bands and above are appeared based on a multilayer LTCC process, however, LTCC belongs to a thick film printing process, the working frequency of the LTCC band-pass filter processed by the W wave band has larger deviation, the loss factor of an LTCC substrate is larger, the insertion loss of the LTCC band-pass filter is larger, and the index requirements of a W wave band radar and a communication receiver cannot be well met.
The bandpass filter based on slot waveguide design provides another possibility for designing and selecting millimeter wave bandpass filter, however, the design frequency band of the slot waveguide bandpass filter is basically concentrated in the Ka band due to the precision of machining.
Therefore, the defects in the prior art are that the processing cost is high, the batch consistency is poor, the frequency deviation is large, the insertion loss is large, the weight is large, and the surface mount device is difficult to use.
Disclosure of Invention
The invention aims to: the invention aims to provide a miniaturized W-band MEMS slot waveguide band-pass filter which is easy to process, good in batch consistency, small in frequency offset, small in insertion loss, light in weight and capable of being used as a surface mount component.
The technical scheme is as follows: in order to achieve the purpose, the invention adopts the following technical scheme:
the miniaturized W-band MEMS gap waveguide band-pass filter comprises a top silicon wafer and a bottom silicon wafer, wherein a gap waveguide structure is formed by electroplating after etching the top silicon wafer and/or the bottom silicon wafer by an MEMS process, a cascade coupling resonant cavity is formed in the gap waveguide structure, and a coupling window is also etched on the top silicon wafer and/or the bottom silicon wafer. The coupling window serves as an input-output structure of the filter.
Further, the pair of coupling windows are respectively arranged on the top silicon wafer and the bottom silicon wafer, or are simultaneously arranged on the top silicon wafer or the bottom silicon wafer. When a pair of coupling windows are respectively arranged on the top silicon wafer and the bottom silicon wafer, the filter can be arranged in the metal cavity to be used as a traditional waveguide device; when a pair of coupling windows are simultaneously arranged on the top-layer silicon wafer or the bottom-layer silicon wafer, the filter provided by the invention can be used as a W-band surface mount component.
Furthermore, when the pair of coupling windows are simultaneously arranged on the top silicon wafer or the bottom silicon wafer, the metallization pattern around the coupling windows is consistent with the metallization pattern from the waveguide port of the mounting substrate to the planar transmission line coupling structure, so that the metallization pattern from the waveguide port of the mounting substrate to the planar transmission line coupling structure can be freely and independently designed.
Further, the top silicon wafer is a low-resistance silicon wafer or a high-resistance silicon wafer.
Further, the bottom silicon wafer is a low-resistance silicon wafer or a high-resistance silicon wafer.
Further, the coupling window is a standard WR-10 waveguide coupling window.
Further, four cascade coupling resonant cavities are formed inside the slot waveguide structure. The number of resonant cavities and the coupling topology mode can be changed according to the design theory of the coupling band-pass filter according to index requirements.
Furthermore, the gap waveguide structure comprises a plurality of gap waveguide units which are arranged in a matrix, the coupling between the resonant cavities is realized by a cross-shaped gap waveguide unit in the middle of the gap waveguide structure and rectangular gap waveguide units on two sides, and other gap waveguide units are periodic square gap waveguide units.
The beneficial effects are that: the invention discloses a miniaturized W-band MEMS slot waveguide band-pass filter, which combines an MEMS process and a slot waveguide structure, has the advantages of miniaturization, light weight, small insertion loss and small frequency deviation, is suitable for large-scale batch production, makes up the application blank of the slot waveguide band-pass filter in a W band, can be used as a W-band surface-mounted component, improves the integration level of a W-band system through coupling of planar transmission lines, and has extremely high engineering application value.
Drawings
FIG. 1 is a perspective view of a filter according to an embodiment of the present invention;
FIG. 2 is a top view of a filter in an embodiment of the invention;
FIG. 3 is a graph comparing simulation and test results of a filter according to an embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further described below with reference to the detailed description and the accompanying drawings.
The embodiment discloses a miniaturized W-band MEMS gap waveguide band-pass filter, which comprises a top silicon wafer 1 and a bottom silicon wafer 2, wherein the bottom silicon wafer 2 is etched by an MEMS process and then electroplated to form a gap waveguide structure, four cascade coupling resonant cavities are formed in the gap waveguide structure through periodic defects, a first coupling window 41 is etched on the top silicon wafer 1, and a second coupling window 42 is etched on the bottom silicon wafer 2. The pair of coupling windows are both standard WR-10 waveguide coupling windows. The electromagnetic field is coupled to the leftmost slot waveguide resonant cavity through the first coupling window 41, and then coupled out through the rightmost slot waveguide resonant cavity and the second coupling window 42, so that the band-pass filtering function of the W band is completed.
In addition, the slot waveguide structure can be etched on the top silicon wafer 1, or etched on both the top silicon wafer 1 and the bottom silicon wafer 2. A pair of coupling windows may also be etched only in the top silicon wafer 1 or only in the bottom silicon wafer 2. When a pair of coupling windows are only etched on the top silicon wafer 1 or the top silicon wafer 2, the MEMS slot waveguide band-pass filter can be used as a W-band surface mount component, and the metallization pattern around the coupling windows is consistent with the metallization pattern of the coupling structure from the waveguide port of the used mounting substrate to the planar transmission line.
The top silicon wafer 1 may be a low-resistance silicon wafer or a high-resistance silicon wafer. Similarly, the underlying silicon wafer 2 may be a low-resistance silicon wafer or a high-resistance silicon wafer.
The slot waveguide structure includes a plurality of slot waveguide units arranged in a matrix, and as shown in fig. 2, the coupling between the resonant cavities is achieved by a cross-shaped slot waveguide unit 31 in the middle of the slot waveguide structure and rectangular slot waveguide units 32 on both sides. The other slot waveguide units are all periodic square slot waveguide units 33.
The individual dimensional parameters of the filter are: h is a 1 ＝0.5mm，h 2 ＝0.7mm，a＝10mm,b＝20mm,a 1 ＝6.3mm,b 1 ＝16mm,l 1 ＝0.4mm,l 2 ＝1.45mm,l 3 ＝2.05mm,l 4 ＝0.93mm,l 5 ＝1.15mm,l 6 ＝0.75mm,l 7 ＝2.8mm,h 3 ＝0.4mm,h 4 ＝0.3mm。
Fig. 3 is a graph comparing simulation and test results of the filter, s11_simulated and s11_simulated are return loss for the test and simulation, respectively, and s21_simulated are insertion loss for the test and simulation, respectively. It can be seen that the passband of the filter is from 89.9GHz to 97.4GHz, the in-band insertion loss is less than 1.6dB, the return loss is >15dB, and the passband frequency offset (frequency offset) for both the test and simulation is less than 0.1GHz.
Claims (6)
1. The miniature W-band MEMS slot waveguide band-pass filter is characterized in that: the MEMS-based silicon wafer structure comprises a top silicon wafer (1) and a bottom silicon wafer (2), wherein a gap waveguide structure is formed by electroplating after etching the top silicon wafer (1) and/or the bottom silicon wafer (2) by an MEMS process, a cascade coupling resonant cavity is formed in the gap waveguide structure, and a coupling window is further etched on the top silicon wafer (1) and/or the bottom silicon wafer (2); four cascade coupling resonant cavities are formed in the gap waveguide structure; the slot waveguide structure comprises a plurality of slot waveguide units which are arranged in a matrix, the coupling between the resonant cavities is realized by a cross-shaped slot waveguide unit (31) in the middle of the slot waveguide structure and rectangular slot waveguide units (32) on two sides of the slot waveguide structure, and other slot waveguide units are periodic square slot waveguide units (33).
2. The miniaturized W-band MEMS slot waveguide bandpass filter of claim 1 wherein: the pair of coupling windows are respectively arranged on the top silicon wafer (1) and the bottom silicon wafer (2), or are simultaneously arranged on the top silicon wafer (1) or the bottom silicon wafer (2).
3. The miniaturized W-band MEMS slot waveguide bandpass filter of claim 2 wherein: when the pair of coupling windows are simultaneously arranged on the top silicon wafer (1) or the bottom silicon wafer (2), the metallization pattern around the coupling windows is consistent with the metallization pattern of the coupling structure from the waveguide port of the mounting substrate to the planar transmission line.
4. The miniaturized W-band MEMS slot waveguide bandpass filter of claim 1 wherein: the top silicon wafer (1) is a low-resistance silicon wafer or a high-resistance silicon wafer.
5. The miniaturized W-band MEMS slot waveguide bandpass filter of claim 1 wherein: the bottom silicon wafer (2) is a low-resistance silicon wafer or a high-resistance silicon wafer.
6. The miniaturized W-band MEMS slot waveguide bandpass filter of claim 1 wherein: the coupling window is a standard WR-10 waveguide coupling window.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810580657.8A CN108832242B (en) | 2018-06-07 | 2018-06-07 | Miniaturized W-band MEMS gap waveguide band-pass filter |
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|---|---|---|---|
| CN201810580657.8A CN108832242B (en) | 2018-06-07 | 2018-06-07 | Miniaturized W-band MEMS gap waveguide band-pass filter |
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| CN108832242A CN108832242A (en) | 2018-11-16 |
| CN108832242B true CN108832242B (en) | 2023-08-22 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109873243B (en) * | 2019-01-31 | 2020-08-25 | 西安交通大学 | A High-Q Cross-Coupling Slot Waveguide Microwave Filter |
| CN116053740B (en) * | 2023-02-08 | 2023-12-01 | 南京航空航天大学 | A surface-mounted W-band compound chip silicon-based substrate packaging integrated microsystem |
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| CN103107394A (en) * | 2012-12-27 | 2013-05-15 | 北京理工大学 | Thz band EMXT cavity filter based on micro-electromechanical system (MEMS) technique |
| CN103326094A (en) * | 2013-05-24 | 2013-09-25 | 华为技术有限公司 | Waveguide filter, manufacturing method thereof and communication device |
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| WO2014169419A1 (en) * | 2013-04-15 | 2014-10-23 | 华为技术有限公司 | Waveguide filter |
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2018
- 2018-06-07 CN CN201810580657.8A patent/CN108832242B/en active Active
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| EP0075498A1 (en) * | 1981-09-04 | 1983-03-30 | Thomson-Csf | Cavity filter with coupling between non-adjacent cavities |
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| CN108832242A (en) | 2018-11-16 |
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