CN112768852A - Folded substrate integrated waveguide phase shifter with CSRR loaded periodically - Google Patents

Folded substrate integrated waveguide phase shifter with CSRR loaded periodically Download PDF

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CN112768852A
CN112768852A CN202011580085.7A CN202011580085A CN112768852A CN 112768852 A CN112768852 A CN 112768852A CN 202011580085 A CN202011580085 A CN 202011580085A CN 112768852 A CN112768852 A CN 112768852A
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csrr
fsiw
phase shifter
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integrated waveguide
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CN112768852B (en
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朱舫
盛俊豪
罗国清
张晓红
代喜望
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Yongzhou Qunhan Technology Co ltd
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Hangzhou Dianzi University
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    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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Abstract

本发明公开了一种周期性加载CSRR的折叠基片集成波导移相器,包括FSIW和周期性排列的CSRR。具有以下优点:在FSIW的中间金属层加载CSRR,保持了FSIW的屏蔽性,避免了CSRR的辐射损耗;FSIW中的CSRR具有很强的加载效应,仅需要少量的CSRR单元即可实现所需相移,缩减了移相器的尺寸;FSIW与慢波结构之间无需转接结构,易于和其他基于FSIW的电路集成,可直接嵌入到现有的FSIW系统中。

Figure 202011580085

The invention discloses a folded substrate integrated waveguide phase shifter periodically loaded with CSRR, including FSIW and periodically arranged CSRR. It has the following advantages: CSRR is loaded on the intermediate metal layer of FSIW, which maintains the shielding property of FSIW and avoids the radiation loss of CSRR; CSRR in FSIW has a strong loading effect, and only a small number of CSRR units are needed to achieve the desired phase. It reduces the size of the phase shifter; there is no need for a transition structure between the FSIW and the slow-wave structure, which is easy to integrate with other FSIW-based circuits and can be directly embedded into the existing FSIW system.

Figure 202011580085

Description

Folded substrate integrated waveguide phase shifter with CSRR loaded periodically
Technical Field
The invention belongs to the technical field of microwaves, and relates to a Folded Substrate Integrated Waveguide (FSIW) phase shifter of a periodically loaded Complementary Split Resonant Ring (CSRR).
Background
The phase shifter is an indispensable key device in a beam forming network and is required to have the characteristics of wide band, good phase shift flatness, low loss, good amplitude balance, easiness in integration with other circuits and the like. At present, most broadband phase shifters are realized based on micro-strips or E-plane waveguides, the former has large loss in a microwave high-frequency band due to an open structure, and the latter has the problems of complex processing, large volume, high cost, difficulty in integration with a planar circuit and the like although the loss is small. As a planar waveguide structure, the Substrate Integrated Waveguide (SIW) realizes perfect compromise between high-performance metal waveguide and low-cost planar transmission line, and has the advantages of low cost, low profile, low loss, easy integration with other planar circuits and the like. However, in some applications, the size of the SIW is still too large, and in order to further reduce the size, the half-mold SIW (hmsiw) and the folding SIW (fsiw) have come into play. With the development of SIW technologies (including SIW, HMSIW and FSIW, etc.), SIW phase shifters have also received great attention.
The most direct SIW phase shifter is a SIW equal-width unequal-length phase shifter, namely, a phase shifting function is realized by using a SIW delay line, but the SIW phase shifter is very sensitive to frequency, has narrow working bandwidth and is greatly limited in application. Another commonly used SIW phase shifter is the SIW equal-length unequal-width phase shifter, which utilizes the approximately parallel phase constants of SIWs of different widths to achieve a flat phase shift with a relative bandwidth of about 10%, but this is still insufficient for wideband applications. In order to further expand the working bandwidth of the SIW phase shifter, the SIW equal-length unequal-width phase shifter and the SIW equal-width unequal-length phase shifter can be organically combined to construct the SIW self-compensation phase shifter, but the physical length of the phase shifter is inconsistent with that of a reference line, so that the structure is asymmetric, and the integration and the application of the phase shifter in a beam forming network are influenced. Another method is to embed a dielectric block having a dielectric constant different from that of the board material in the SIW to change the equivalent dielectric constant of the SIW transmission line, thereby changing the phase velocity of signal propagation. However, this structure is not only complicated to manufacture, but also occupies a large area. In addition, a broadband phase shift function can also be realized by periodically loading Complementary Split Resonant Rings (CSRR) on the metal surface of the SIW or HMSIW. However, such a surface etching structure destroys the shielding property of the SIW, increases the radiation loss of the phase shifter, and deteriorates the amplitude balance between the phase shifter and the reference line.
In the aspect of FSIW phase shifters, only FSIW equal-width unequal-length phase shifters and FSIW equal-width unequal-length phase shifters are reported at present, and no phase shifter related technology report for loading CSRR structures on FSIW exists.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides an FSIW phase shifter for periodically loading CSRR on an FSIW intermediate metal layer, which not only has small size and can realize flat phase shift in a wide frequency band, but also has the characteristic of complete shielding, and avoids the radiation loss of CSRR.
The invention adopts the following technical scheme:
the invention provides an FSIW phase shifter for periodically loading CSRR, which comprises FSIW and a plurality of CSRR which are periodically arranged;
the FSIW is composed of a top metal layer, a first medium layer, a middle metal layer, a second medium layer, a bottom metal layer and two rows of metallized through hole arrays penetrating through the first medium layer and the second medium layer, wherein the top metal layer, the first medium layer, the middle metal layer, the second medium layer and the bottom metal layer are arranged in sequence from top to bottom;
the distance W between the two rows of the metallized through hole arrays is the width of FSIW, and the cut-off frequency of FSIW is determined; one side of the middle metal layer is connected with one row of the metalized through hole arrays, the edge of the other side of the middle metal layer is not contacted with the other row of the metalized through hole arrays, and the distance g between the two rows of the metalized through hole arrays is 0.125W;
the CSRR in periodic arrangement is etched on a middle metal layer of the FSIW and comprises an outer ring gap and an inner ring gap with opposite openings;
preferably, the outer ring slot opening of the CSRR is towards the edge of the middle metal layer that is not in contact with the metalized via array;
preferably, the distance between the inner ring gap and the outer ring gap of the CSRR in the x-axis direction is 0;
preferably, the equivalent circuit of CSRR is a parallel LC loop with an equivalent inductance LrAnd an equivalent capacitance value CrLength L of gap with outer ringR1And length L of inner ring gapR2Positively correlated with the width W of the outer ring gapR1And width W of inner ring gapR2Negative correlation; therefore, the resonant frequency of the CSRR can be effectively controlled by adjusting the length and the width of the outer ring gap and the inner ring gap
Figure BDA0002865774950000021
Making it work in the working frequency band needed by the phase shifter;
preferably, the coupling strength between FSIW and CSRR can be varied by varying LS1And S2The coupling strength between adjacent CSRRs can be adjusted by changing S1Carrying out adjustment; wherein L isS1The outer ring gap opening length, S, of CSRR1Denotes the distance, S, between adjacent CSRRs2Representing the distance between the outer ring gap opening of the CSRR and the edge of the middle metal layer;
preferably, the number of CSRRs is determined by the required phase shift value, and the phase shift value can be improved by increasing the number of CSRRs;
preferably, the first dielectric layer and the second dielectric layer are both TanconicTLY-5 dielectric substrates with the relative dielectric constant of 2.2, the loss tangent of 0.0009 and the thickness of 0.5 mm;
more preferably, the working frequency band of the FSIW phase shifter is set to 12.5GHz, the phase shift is 90 degrees, and the number of CSRRs is 3. The specific geometric parameters are as follows: w6.4, g 0.8, S1=0.2,S2=0.9,WR1=0.3,WR2=0.2,LR1=11.8,LR2=7.7,LS1=2,LS21.3 (unit: mm)
The working principle is as follows:
the CSRR essentially behaves as an electric dipole, and etching of the periodically arranged CSRR on the intermediate metal layer of FSIW can act as a master mode (TE) for FSIW10Mode) produces a strong loading effect that changes the electromagnetic field distribution in the FSIW so that it is concentrated near the CSRR. The FSIW region of the periodically loaded CSRR has a smaller phase velocity than the FSIW of the unloaded CSRR and can therefore be considered as a slow wave structure. Moreover, since the phase velocities of the FSIW of the periodically loaded CSRR and the FSIW of the unloaded CSRR are approximately parallel, the two have flat phase difference in a wide frequency band under the same physical length. The phase shift can be reduced by changing the size of the CSRR (reducing the distance D between the inner ring gap opening and the outer ring gap of the CSRR in the y-axis direction12Length L of inner ring gapR2The phase shift value increases; increase the opening length L of the outer ring gapS1Increase of phase shift valueAdd) and number (increase the number of CSRRs, which increases the phase shift value).
The invention has the following advantages:
(1) CSRR is loaded on the middle metal layer of FSIW, so that the shielding property of FSIW is kept, the radiation loss of CSRR is avoided, and the amplitude balance between the CSRR and reference FSIW is good;
(2) the CSRR in the FSIW has a strong loading effect, and the required phase shift can be realized only by a small number of CSRR units, so that the design complexity is reduced, and the size of the phase shifter is reduced;
(3) the FSIW and the slow wave structure do not need a switching structure, are easy to integrate with other FSIW-based circuits, and can be directly embedded into the existing FSIW system.
Drawings
FIGS. 1(a) and (b) are top and side views, respectively, of the present invention;
FIG. 2 is a phase shift simulation result of the present invention;
FIG. 3 is the S-parameter simulation result of the present invention.
Fig. 4 is a comparison of insertion loss simulation results between FSIW loaded with CSRR and FSIW unloaded with CSRR.
Detailed Description
The present invention will be further described with reference to the accompanying drawings.
As shown in fig. 1(a) and (b), the FSIW phase shifter for periodically loading CSRR provided by the present invention comprises: FSIW1 and CSRR 2 arranged periodically; the FSIW1 consists of a top metal layer 3, a first medium layer 4, a middle metal layer 5, a second medium layer 6, a bottom metal layer 7 and two rows of metallized through hole arrays 8 penetrating through the first medium layer 4 and the second medium layer 6; the distance W between the two rows of metallized through hole arrays 8 is the width of FSIW, and the cut-off frequency of FSIW is determined; one side of the middle metal layer 5 is connected with one row of the metalized through hole arrays, and the distance g between the edge of the other side and the other row of the metalized through hole arrays is 0.125W;
the CSRR 2 arranged periodically is etched on the middle metal layer 5 of the FSIW1, and the distance between the adjacent CSRR is S1The distance between CSRR and the edge of intermediate metal layer 5 is S2(ii) a CSRR sheetThe element comprises an outer ring gap 2a and an inner ring gap 2 b; the length of the outer ring gap 2a is LR1Width of WR1The length of the ring opening is LS1(ii) a The length of the inner ring gap 2b is LR2Width of WR2The length of the ring opening is LS2(ii) a The distance between the inner ring gap 2a and the outer ring gap 2b in the x-axis direction is 0, and the distance in the y-axis direction is D12. The specific geometric parameters are as follows: w6.4, g 0.8, S1=0.2,S2=0.9,WR1=0.3,WR2=0.2,LR1=11.8,LR2=7.7,LS1=2,LS21.3 (unit: mm).
Fig. 2 is a simulation result of phase shift of the present invention. In this example, the FSIW phase shifter of the periodically loaded CSRR has a center frequency of 12.5 GHz. The flat phase shift of 90 +/-4 degrees is realized in the frequency range of 10.3-15GHz, the phase shift bandwidth is as high as 37.6 percent, and the excellent phase shift performance is shown.
FIG. 3 is the S-parameter simulation result of the present invention. As can be seen, the insertion loss | S of the phase shifter is within the whole working frequency band (10-15GHz)21Less than 0.29dB, return loss (| S)11|) is better than 23 dB. It is verified that the FSIW of the periodically loaded CSRR can be directly connected with the common FSIW without any switching structure.
FIG. 4 shows the insertion loss (| S) between FSIW loaded with CSRR and FSIW unloaded with CSRR21|) simulation results. It can be seen from the graph that the maximum difference between the two is only 0.02db in the frequency range of 10.5-15 GHz. It was verified that CSRR loaded at FSIW intermediate metal layer has almost no radiative losses. Compared with the existing SIW and HMSIW phase shifters periodically loaded with CSRR, the invention obtains lower insertion loss.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.

Claims (10)

1.周期性加载CSRR的折叠基片集成波导移相器,其特征在于包括FSIW和多个周期性排列的CSRR;1. A folded substrate integrated waveguide phase shifter periodically loaded with CSRR, characterized in that it includes an FSIW and a plurality of periodically arranged CSRRs; 所述FSIW由从上至下依次设置的顶层金属层、第一介质层、中间金属层、第二介质层、底层金属层,以及贯穿第一介质层、第二介质层的两排金属化通孔阵列组成;The FSIW consists of a top metal layer, a first dielectric layer, an intermediate metal layer, a second dielectric layer, a bottom metal layer, and two rows of metallization through the first dielectric layer and the second dielectric layer. The composition of the hole array; 中间金属层的一侧与一排金属化通孔阵列相连,另一侧的边沿与另一排金属化通孔阵列不接触;One side of the intermediate metal layer is connected to one row of metallized through hole arrays, and the edge of the other side is not in contact with another row of metallized through hole arrays; 所述周期性排列的CSRR刻蚀在FSIW的中间金属层上,包括两个开口相反的外环缝隙和内环缝隙。The periodically arranged CSRR is etched on the middle metal layer of the FSIW, and includes two outer ring slits and inner ring slits with opposite openings. 2.根据权利要求1所述的周期性加载CSRR的折叠基片集成波导移相器,其特征在于中间金属层的不接触金属化通孔阵列一侧与金属化通孔阵列的距离g=0.125W,W表示两排金属化通孔阵列之间的距离。2. The folded substrate integrated waveguide phase shifter periodically loaded with CSRR according to claim 1, characterized in that the distance g=0.125 between the side of the intermediate metal layer that does not contact the metallized through-hole array and the metallized through-hole array W, W represents the distance between two rows of metallized via arrays. 3.根据权利要求1所述的周期性加载CSRR的折叠基片集成波导移相器,其特征在于两排金属化通孔阵列之间的距离W为FSIW的宽度,决定了FSIW的截止频率。3 . The folded substrate integrated waveguide phase shifter periodically loaded with CSRR according to claim 1 , wherein the distance W between the two rows of metallized through hole arrays is the width of the FSIW, which determines the cutoff frequency of the FSIW. 4 . 4.根据权利要求1所述的周期性加载CSRR的折叠基片集成波导移相器,其特征在于CSRR的外环缝隙开口朝向不与金属化通孔阵列接触的中间金属层边沿;内环缝隙与外环缝隙间在x轴方向的距离为0。4. The folded substrate integrated waveguide phase shifter periodically loaded with CSRR according to claim 1, characterized in that the opening of the outer ring slot of the CSRR faces the edge of the middle metal layer that is not in contact with the metallized via array; The distance from the outer ring gap in the x-axis direction is 0. 5.根据权利要求4所述的周期性加载CSRR的折叠基片集成波导移相器,其特征在于CSRR的等效电路为并联LC回路,其等效电感值Lr和等效电容值Cr与外环缝隙的长度LR1和内环缝隙的长度LR2正相关,与外环缝隙的宽度WR1和内环缝隙的宽度WR2负相关;调节外环缝隙、内环缝隙的长度和宽度可以有效控制CSRR的谐振频率
Figure FDA0002865774940000011
使其工作在移相器所需的工作频带内。
5. The folded substrate integrated waveguide phase shifter periodically loaded with CSRR according to claim 4, characterized in that the equivalent circuit of CSRR is a parallel LC loop, and its equivalent inductance value L r and equivalent capacitance value C r It is positively related to the length L R1 of the outer ring gap and the length L R2 of the inner ring gap, and negatively related to the width W R1 of the outer ring gap and the width W R2 of the inner ring gap; adjust the length and width of the outer ring gap and the inner ring gap Can effectively control the resonant frequency of CSRR
Figure FDA0002865774940000011
Make it work within the operating frequency band required by the phase shifter.
6.根据权利要求4或5所述的周期性加载CSRR的折叠基片集成波导移相器,其特征在于FSIW与CSRR之间的耦合强度可以通过改变LS1和S2进行调节,相邻CSRR之间的耦合强度可以通过改变S1进行调节;其中LS1表示CSRR的外环缝隙开口长度,S1表示相邻CSRR之间的距离,S2表示CSRR的外环缝隙开口与中间金属层边沿之间的距离。6. The folded substrate integrated waveguide phase shifter periodically loaded with CSRR according to claim 4 or 5, characterized in that the coupling strength between the FSIW and the CSRR can be adjusted by changing L S1 and S 2 , and the adjacent CSRR The coupling strength between them can be adjusted by changing S 1 ; where L S1 represents the opening length of the outer ring gap of CSRR, S 1 represents the distance between adjacent CSRRs, and S 2 represents the outer ring gap opening of CSRR and the edge of the middle metal layer. the distance between. 7.根据权利要求1所述的周期性加载CSRR的折叠基片集成波导移相器,其特征在于CSRR的尺寸和个数决定相移值大小。7 . The folded substrate integrated waveguide phase shifter periodically loaded with CSRRs according to claim 1 , wherein the size and number of CSRRs determine the phase shift value. 8 . 8.根据权利要求7所述的周期性加载CSRR的折叠基片集成波导移相器,其特征在于减小CSRR内环缝隙开口与外环缝隙间在y轴方向的距离D12、内环缝隙的长度LR2,相移值增加;增加外环缝隙的开口长度LS1,移相值增加;增加CSRR的个数,移相值增加。8 . The folded substrate integrated waveguide phase shifter periodically loaded with CSRR according to claim 7 , wherein the distance D 12 between the CSRR inner ring slot opening and the outer ring slot in the y-axis direction and the inner ring slot are reduced. 9 . If the length L R2 is increased, the phase shift value increases; if the opening length L S1 of the outer ring gap increases, the phase shift value increases; if the number of CSRRs increases, the phase shift value increases. 9.根据权利要求1或6所述的周期性加载CSRR的折叠基片集成波导移相器,其特征在于FSIW移相器的工作频段设置为12.5GHz,相移大小为90度,CSRR的个数为3个;具体几何参数如下:W=6.4,g=0.8,S1=0.2,S2=0.9,WR1=0.3,WR2=0.2,LR1=11.8,LR2=7.7,LS1=2,LS2=1.3(单位:mm)。9. The folded substrate integrated waveguide phase shifter periodically loaded with CSRR according to claim 1 or 6 is characterized in that the working frequency band of the FSIW phase shifter is set to 12.5GHz, the phase shift size is 90 degrees, and the number of CSRR The number is 3; the specific geometric parameters are as follows: W = 6.4, g = 0.8, S 1 = 0.2, S 2 = 0.9, W R1 = 0.3, W R2 = 0.2, L R1 = 11.8, L R2 = 7.7, L S1 =2, L S2 =1.3 (unit: mm). 10.根据权利要求1所述的周期性加载CSRR的折叠基片集成波导移相器,其特征在于CSRR实质上表现为电偶极子,在FSIW的中间金属层刻蚀周期性排列的CSRR会对FSIW的主模(TE10模)产生很强的加载效应,从而改变FSIW中的电磁场分布,使其集中在CSRR附近。10. The folded substrate integrated waveguide phase shifter periodically loaded with CSRR according to claim 1, characterized in that the CSRR essentially behaves as an electric dipole, and the periodically arranged CSRR will be etched in the middle metal layer of the FSIW. A strong loading effect is generated on the main mode (TE 10 mode) of the FSIW, which changes the electromagnetic field distribution in the FSIW and makes it concentrated near the CSRR.
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN113964462A (en) * 2021-10-26 2022-01-21 重庆邮电大学 Small broadband phase shifter based on slow-wave half-mode substrate integrated waveguide

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