CN202019043U - Substrate integrated waveguide filter with steep sideband characteristic - Google Patents
Substrate integrated waveguide filter with steep sideband characteristic Download PDFInfo
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- CN202019043U CN202019043U CN2011200425959U CN201120042595U CN202019043U CN 202019043 U CN202019043 U CN 202019043U CN 2011200425959 U CN2011200425959 U CN 2011200425959U CN 201120042595 U CN201120042595 U CN 201120042595U CN 202019043 U CN202019043 U CN 202019043U
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- filter
- metal
- integrated waveguide
- substrate integrated
- sideband
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Abstract
The utility model relates to a substrate integrated waveguide filter with a steep sideband characteristic, which comprises three layers of structures. The front surface of the filter comprises two sections of metal microstrip lines, one section of substrate integrated waveguide etched with a DGS (defected ground structure); the middle of the filter comprises a medium layer and two rows of metal through holes; and the back surface of the filter comprises a complete metal coating. The DGS consists of two open-loop resonators which are arranged vertically, and metal conduction bands in the middle of two loops are etched for removal so that the two loops are connected. The upper open-loop resonator and the lower open-loop resonator can form resonance, and according to an electric field distribution map of a TE10 (tangent elevation 10) model of a component, etching the metal conduction bands in the middle for removal can influence a propagation characteristic. The substrate integrated waveguide filter with the steep sideband characteristic is simple in structure, is easy to process, and is simple and feasible; the extra hole punching for forming a cavity is not needed; and the processing precision is high. Compared with a conventional substrate integrated waveguide filter, the S11 in a passing band of the novel filter is smaller; the plugging loss in the passing band is smaller; two transmission zero points are respectively arranged on the left side and the right side of the passing band; and a sideband is steeper.
Description
Technical field
The utility model relates to a kind of substrate integral wave guide filter with precipitous sideband characteristic, belongs to band pass filter category in the wireless communication technology field.
Background technology
Along with developing rapidly of the communication technology, low frequency wave bands has been assigned with and has finished, and the interference between the different frequency is also bigger.So communication frequency is more and more higher, microwave communication has obtained greatly developing.
Except normal domestic communication, military communication is all had higher requirement at aspects such as volume weights to microwave communication circuit, and this just needs us to realize the miniaturization of microwave circuit, integrated and high reliability.Along with development of technology, we require more and more stricter to the integrated level of system, loss, radiation etc.And the existence of the guided wave structure formed because conductor losses in plane, dielectric loss and radiation loss makes when it is operated in microwave band that the Q value is not very high, and this has just limited its application in microwave band.On the other hand, though the conventional waveguide structure can constitute the very high device of Q value, they be not volume too huge be exactly integrated processing very the difficulty, so can not be in integrated system by large-scale application.
In order to solve this contradiction, substrate integration wave-guide (SIW) structure has been carried.This structure is to realize waveguiding action with the metal sidewall that metal throuth hole substitutes some conventional waveguide, and this just makes SIW can use printed circuit board (PCB) (PCB) or LTCC (LTCC) realization.Can make integrated level height, good, the low-loss microwave device of performance with SIW, it is following microwave circuit miniaturization, an integrated important directions.
In current numerous microwave telecommunication devices and device, it also is the most basic device that filter is undoubtedly the most frequently used.Along with the development of various wireless technologys, performance height, volume are little, in light weight, cost is low has become the filter main development tendency, constitutes a kind of settling mode that filter has bright prospect beyond doubt with the SIW structure.
Because SIW up and down both sides is the type metal face, so can adopt etching defect ground structure DGS(Defected Ground Structure on the SIW structure) method constitute filter.DGS is applied on the SIW, can increase the volume of filter, improve the band internal characteristic and the band external characteristic of filter.DGS need not be subjected to cycle limit simultaneously, designs more flexible.Yet traditional DGS is applied on the microstrip line, and performance is undesirable, thus seek the novel DGS structure that can be applied on the SIW, and the filter of making function admirable is significant.
The utility model content
The purpose of this utility model is to provide a kind of substrate integral wave guide filter with precipitous sideband characteristic at the defective of prior art existence.This Design of Filter is simple, and volume is little, and processing has two transmission poles in the passband easily, inserts loss less than 1dB, and a transmission zero is respectively arranged about passband, has precipitous sideband characteristic.
For achieving the above object, design of the present utility model is:
(1) improves being applied on the DGS basis traditional on the microstrip line, it can be applied on the substrate integration wave-guide, and reach more precipitous sideband characteristic.
(2) on the basis of traditional complementary open-loop resonator (CSRRs), all change two CSRR into the monocycle resonator respectively, and the metal in the middle of two rings is partly etched away, to change electromagnetic wave propagation.
(3) the utility model adopts following dielectric-slab material: medium substrate selects for use dielectric constant to be
=2.65, thickness
h=0.8mm.
(4) circuit board after the processing is one deck, and its reverse side is the coat of metal, and the front comprises one section little band, and one section etching has the substrate integration wave-guide of DGS, and wherein little band two ends are welded with two sub-miniature A connectors, are used for actual measurement.
According to the foregoing invention design, the present invention adopts following technical proposals:
A kind of substrate integral wave guide filter with precipitous sideband characteristic, comprise front, intermediate layer and bottom surface three-decker, it is characterized in that there are two sections metal micro-strip line and one section substrate integration wave-guide that has defect ground structure in described front, described intermediate layer is the dielectric-slab that there is plated-through hole both sides, and described bottom surface is the coat of metal.Described defect ground structure on the described substrate integration wave-guide is to be placed up and down by two basic open-loop resonators to constitute, and the metal conduction band in the middle of two rings is etched away two rings are linked.Two open-loop resonators can form resonance up and down, according to the TE of device
10The distribution map of the electric field of mould, the intermetallic metal conduction band that etches away can influence propagation characteristic.
The width of described substrate integration wave-guide is 12.6mm ± 1mm.
Described medium flaggy is a dielectric constant
=2.65 dielectric-slab, this dielectric-slab thickness
h=0.8mm ± 0.05mm.
Described metal micro-strip line, middle metal throuth hole part, the coat of metal of reverse side part can be electric conductivity preferred metal materials, as gold or silver or copper.
The present invention has following conspicuous outstanding substantive distinguishing features and remarkable advantage compared with prior art:
(1) the present invention is simple in structure, is easy to processing.Because this structure is to form filter at the direct etching DGS of substrate integration wave-guide upper surface, forms cavity without overpunch, the machining accuracy height is simple.
(2) compare with the conventional planar structure, radiation loss is less, is beneficial to and is applied in microwave band.Compare with the conventional waveguide structure, volume is little, integrated level is high, price is low, be easy to processing, can realize with technologies such as PCB or LTCC.
(3) novel DGS resonance is when the cut-off frequency of substrate integration wave-guide is following, S in the passband
11Littler, Insertion Loss is littler in the passband,, a transmission zero is respectively arranged about passband, make sideband more more precipitous than the sideband of the filter that loads CSRRs.
Description of drawings
The CSRRs cellular construction schematic diagram that Fig. 1 is traditional
The novel DGS cellular construction of Fig. 2 schematic diagram.
Fig. 3 tradition loads the structural representation of the substrate integral wave guide filter of CSRRs.
Fig. 4 has the structural representation of the substrate integral wave guide filter of precipitous sideband characteristic.
Fig. 5 tradition loads the frequency response chart of the substrate integral wave guide filter of CSRRs.
Fig. 6 has the frequency response chart of the substrate integral wave guide filter of precipitous sideband characteristic.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are elaborated:
The schematic diagram of novel DGS cellular construction proposed by the invention as shown in Figure 2, it is at the complementary open-loop resonator of tradition (CSRRs) cellular construction, as Fig. 1, all changes two CSRR into the monocycle resonator on the basis, and fall the metal conduction band between two resonators is partially-etched, thereby influence TE
10The propagation of mould.Can regulate the position of passband and transmission zero by the size that changes resonator, the width that changes two direct metal conduction band parts of resonator can change two couplings between the resonator, thereby can regulate the frequency response of filter.
As Fig. 3 is the structural representation that tradition loads the substrate integral wave guide filter of traditional C RRs unit.Fig. 4 is the structural representation that tradition loads the substrate integral wave guide filter of CSRRs.
Embodiment one:
Referring to Fig. 4, originally the substrate integral wave guide filter that has precipitous sideband characteristic, comprise the three-decker that is realized by the PCB technology: the front comprises that two sections metal micro-strip line, one section etching have the substrate integration wave-guide of DGS, the centre comprises the sub-miniature A connector of dielectric layer, two row's metal throuth holes, input and output, and the back side comprises the complete coat of metal.Wherein pcb board material dielectric constant is 2.65, and sheet metal thickness is 0.8mm, and metal throuth hole covers copper for punching back inwall.
Embodiment two:
Present embodiment and embodiment one are basic identical, and special feature is: realize three-decker by the LTCC technology, metal throuth hole is filled copper for the punching back in through hole.
Embodiment three:
Present embodiment and embodiment two are basic identical, and special feature is:
Fig. 4 is the structural representation of present embodiment, and through design, emulation and optimization, the concrete size of substrate integral wave guide filter of finally determining to have precipitous sideband characteristic is as follows:
w=12.6mm,m=1.48mm,vd=0.8mm,?a1=5mm，b=11mm,a2=0.3mm,g=0.4mm,s=0.6mm。
Having designed centre frequency based on said method is 5GHz, and relative bandwidth is about 15% microwave filter, and HFSS carries out emulation by Electromagnetic Simulation software, debugging.
Fig. 5 has shown the frequency response of the substrate integral wave guide filter of traditional loading CSRRs.
Fig. 6 has shown the frequency response of the substrate integral wave guide filter with precipitous sideband characteristic, and two sidebands that simulation result shows new mode filter are steeper all, and Insertion Loss is less in the band.And Filter Structures is simple, and size is little, has realized miniaturization.
Above simulation result shows:
(1) pass band width is about 780MHz, and in-band insertion loss is all less than 1dB.
(2) passband is precipitous by the edge, at 3GHz and 6.8GHz place two transmission zeros is arranged.
(3) in the band, band is outer functional, and is simultaneously simple in structure, is easy to processing.
Claims (4)
1. substrate integral wave guide filter with precipitous sideband characteristic, comprise front, intermediate layer and bottom surface three-decker, it is characterized in that there are two sections metal micro-strip line (1,5) and one section substrate integration wave-guide (2) that has defect ground structure (4) in described front, described intermediate layer is the dielectric-slab (6) that there are plated-through hole (3) both sides, and described bottom surface is the coat of metal (7).
2. the substrate integral wave guide filter with precipitous sideband characteristic according to claim 1, the described defect ground structure (4) of its feature on described substrate integration wave-guide (2) is: settled up and down by two basic open-loop resonators to constitute, and the metal conduction band in the middle of two rings etched away two rings are linked.
3. the substrate integral wave guide filter with precipitous sideband characteristic according to claim 1, the width that it is characterized in that described substrate integration wave-guide (2) is 12.6mm ± 1mm, the inwall of described plated-through hole (3) covers copper.
4. the substrate integral wave guide filter with precipitous sideband characteristic according to claim 1 is characterized in that described dielectric-slab (6) is a dielectric constant
=2.65 dielectric-slab, this dielectric-slab thickness
h=0.8mm ± 0.05mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200425959U CN202019043U (en) | 2011-02-21 | 2011-02-21 | Substrate integrated waveguide filter with steep sideband characteristic |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200425959U CN202019043U (en) | 2011-02-21 | 2011-02-21 | Substrate integrated waveguide filter with steep sideband characteristic |
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| CN202019043U true CN202019043U (en) | 2011-10-26 |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700910A (en) * | 2014-01-08 | 2014-04-02 | 西南大学 | Complementary opening resonance ring and defect ground structure half module substrate integrated waveguide dual-band filter |
| CN103956542A (en) * | 2014-04-18 | 2014-07-30 | 华南理工大学 | Broadband substrate integration waveguide filter adopting U-shaped groove line |
| CN104112888A (en) * | 2014-08-04 | 2014-10-22 | 哈尔滨工业大学 | Substrate integrated waveguide (SIW) band-pass filter loading fence-shaped defected ground structures |
| CN104134838A (en) * | 2014-08-04 | 2014-11-05 | 哈尔滨工业大学 | SIW broadband band-pass filter loaded with I-shaped defected ground structure |
| CN105009367A (en) * | 2013-02-26 | 2015-10-28 | Nec平台株式会社 | Antenna and electronic device |
| RU2686486C1 (en) * | 2018-04-25 | 2019-04-29 | Акционерное общество "Российская корпорация ракетно-космического приборостроения и информационных систем" (АО "Российские космические системы") | Microwave filter based on waveguide integrated into substrate and method of its manufacturing |
| CN111613861A (en) * | 2020-05-20 | 2020-09-01 | 江南大学 | Dual-mode SIW filter with wide stop-band rejection |
| CN111934073A (en) * | 2020-09-27 | 2020-11-13 | 成都频岢微电子有限公司 | Miniaturized wide stop band filter based on micro-strip and substrate integrated waveguide mixing |
| CN114156617A (en) * | 2021-12-07 | 2022-03-08 | 杭州电子科技大学 | Dual-band filter with dual-mode SIW rectangular cavity loaded with complementary split ring resonators |
| CN115411484A (en) * | 2022-09-26 | 2022-11-29 | 上海大学 | Substrate integrated waveguide resonant cavity based on four-corner star-shaped groove-shaped super-structure surface |
| CN116073096A (en) * | 2022-11-29 | 2023-05-05 | 西安电子科技大学 | Double-layer substrate integrated waveguide band-pass filter and design method |
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2011
- 2011-02-21 CN CN2011200425959U patent/CN202019043U/en not_active Expired - Fee Related
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9685696B2 (en) | 2013-02-26 | 2017-06-20 | Nec Platforms, Ltd. | Antenna and electronic device |
| CN105009367A (en) * | 2013-02-26 | 2015-10-28 | Nec平台株式会社 | Antenna and electronic device |
| CN103700910A (en) * | 2014-01-08 | 2014-04-02 | 西南大学 | Complementary opening resonance ring and defect ground structure half module substrate integrated waveguide dual-band filter |
| CN103700910B (en) * | 2014-01-08 | 2015-09-02 | 西南大学 | The two band filter of a kind of complementary openings resonant ring and defect ground structure half module substrate integrated wave guide |
| CN103956542B (en) * | 2014-04-18 | 2016-08-17 | 华南理工大学 | A kind of broad-band chip integrated waveguide wave filter using U-type groove line |
| CN103956542A (en) * | 2014-04-18 | 2014-07-30 | 华南理工大学 | Broadband substrate integration waveguide filter adopting U-shaped groove line |
| CN104112888B (en) * | 2014-08-04 | 2017-02-01 | 哈尔滨工业大学 | Substrate integrated waveguide (SIW) band-pass filter loading fence-shaped defected ground structures |
| CN104134838B (en) * | 2014-08-04 | 2017-01-18 | 哈尔滨工业大学 | SIW broadband band-pass filter loaded with I-shaped defected ground structure |
| CN104134838A (en) * | 2014-08-04 | 2014-11-05 | 哈尔滨工业大学 | SIW broadband band-pass filter loaded with I-shaped defected ground structure |
| CN104112888A (en) * | 2014-08-04 | 2014-10-22 | 哈尔滨工业大学 | Substrate integrated waveguide (SIW) band-pass filter loading fence-shaped defected ground structures |
| RU2686486C1 (en) * | 2018-04-25 | 2019-04-29 | Акционерное общество "Российская корпорация ракетно-космического приборостроения и информационных систем" (АО "Российские космические системы") | Microwave filter based on waveguide integrated into substrate and method of its manufacturing |
| CN111613861A (en) * | 2020-05-20 | 2020-09-01 | 江南大学 | Dual-mode SIW filter with wide stop-band rejection |
| CN111934073A (en) * | 2020-09-27 | 2020-11-13 | 成都频岢微电子有限公司 | Miniaturized wide stop band filter based on micro-strip and substrate integrated waveguide mixing |
| CN114156617A (en) * | 2021-12-07 | 2022-03-08 | 杭州电子科技大学 | Dual-band filter with dual-mode SIW rectangular cavity loaded with complementary split ring resonators |
| CN115411484A (en) * | 2022-09-26 | 2022-11-29 | 上海大学 | Substrate integrated waveguide resonant cavity based on four-corner star-shaped groove-shaped super-structure surface |
| CN116073096A (en) * | 2022-11-29 | 2023-05-05 | 西安电子科技大学 | Double-layer substrate integrated waveguide band-pass filter and design method |
| CN116073096B (en) * | 2022-11-29 | 2024-03-26 | 西安电子科技大学 | Double-layer substrate integrated waveguide band-pass filter and design method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111026 Termination date: 20130221 |