CN204167446U - The integrated waveguide dual mode filter of line of rabbet joint disturbance - Google Patents

The integrated waveguide dual mode filter of line of rabbet joint disturbance Download PDF

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Publication number
CN204167446U
CN204167446U CN201420638418.0U CN201420638418U CN204167446U CN 204167446 U CN204167446 U CN 204167446U CN 201420638418 U CN201420638418 U CN 201420638418U CN 204167446 U CN204167446 U CN 204167446U
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China
Prior art keywords
line
rabbet joint
dual mode
mode filter
integrated waveguide
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Expired - Fee Related
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CN201420638418.0U
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Chinese (zh)
Inventor
李荣强
陈倩
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Chengdu University of Information Technology
Chengdu Information Technology Co Ltd of CAS
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Chengdu Information Technology Co Ltd of CAS
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Abstract

The utility model relates to integral wave guide filter.The utility model discloses a kind of integrated waveguide dual mode filter of line of rabbet joint disturbance.The technical solution of the utility model is, the integrated waveguide dual mode filter of line of rabbet joint disturbance, comprise medium substrate and conductive layer, described conductive layer is attached to described medium substrate front and back, the region that on the conductive layer in described medium substrate front, the short circuit through hole of regular arrangement surrounds, described short circuit through hole is electrically connected with the conductive layer of medium substrate front and back, described regional edge is along being connected with input and output, described input and output lay respectively at two orthogonal directions in described region, a line of rabbet joint is furnished with in described region, the described line of rabbet joint is crossing with the perpendicular bisector of described input and output.The utility model can realize two transmission zeros, has good frequency selectivity.Have that structure is simple, volume is little, small loss and other features.The utility model is suitable in microstrip circuit very much.

Description

The integrated waveguide dual mode filter of line of rabbet joint disturbance
Technical field
The utility model relates to microstrip circuit, particularly integral wave guide filter.
Background technology
The basic structure of microstrip circuit as depicted in figs. 1 and 2, generally comprises medium substrate 2 and is attached to the conductive layer 1 in medium substrate 2 front and the conductive layer 3 (also referred to as ground plane) at medium substrate 2 back side.Medium substrate 2 generally adopts insulating material, and conductive layer 1 and conductive layer 3 are made up of metal patch or washing layer usually, identical with conventional printed circuit board arrangement.By being formed into various different shape on conductive layer 1, comprise rectangular strip or the bar of other shapes or block that conductive layer forms and remove bar or the block of the various shapes that conductive layer stays, as the microstrip line 13 in Fig. 1 and the line of rabbet joint 11 etc., the microstrip circuit of difference in functionality and various microwave device can be formed, as microstrip antenna, microstrip coupler, microstrip filter etc.
Filter is the very general device of a kind of application, is the Primary Component of the aspect such as radar, communication, its performance quality directly whole radio-frequency front-end system of impact.Desirable filter is so a kind of two-port network: in required frequency range, and can make the zero-decrement transmission of microwave signal, this frequency range is called passband; Microwave signal can be made in remaining frequency range can not to transmit completely, and this remaining frequency range is called stopband.Traditional microwave filter uses microstrip transmission line and metal waveguide structure usually.The advantages such as microstrip filter has low side surface, and volume is little, is easy to processing, and applicable and active circuit is integrated.Mainly power capacity is low for its shortcoming existed, and loss is large.And metal waveguide filter power capacity is high, loss is low, but volume is large, is not suitable for Planar integration.Integral wave guide filter combines both advantage to a certain extent, and it utilizes the performance of planar structure simulated implementation waveguide, keeping waveguide filter high power capacity, low-loss while, also retains the advantage that microstrip filter is easy to integrated.Integral wave guide filter has the essential characteristic of microstrip circuit structure, belongs to a kind of cavity body filter of plane form.
Traditional integral wave guide filter adopts multiple cavity cascade to realize, if realize transmission zero, usually an additional cavity path implement cross-couplings is needed, as bimodulus filter patterns will be realized, the multiple short circuit through hole of usual employing or many line of rabbet joint realize the disturbance of degenerate mode, make filter construction complicated, volume is bigger than normal, and loss is higher.
Utility model content
Technical problem to be solved in the utility model, is just to provide a kind of integrated waveguide dual mode filter of line of rabbet joint disturbance, utilizes a shute thread to realize the disturbance of integral waveguide cavity degenerate mode, improves integrated waveguide dual mode filter structure.
The utility model solve the technical problem, the technical scheme adopted is, the integrated waveguide dual mode filter of line of rabbet joint disturbance, comprise medium substrate and conductive layer, described conductive layer is attached to described medium substrate front and back, it is characterized in that, the region that on the conductive layer in described medium substrate front, the short circuit through hole of regular arrangement surrounds, described short circuit through hole is electrically connected with the conductive layer of medium substrate front and back, described regional edge is along being connected with input and output, described input and output lay respectively at two orthogonal directions in described region, a line of rabbet joint is furnished with in described region, the described line of rabbet joint is crossing with the perpendicular bisector of described input and output.
Further, the short circuit through hole being positioned at described medium substrate edge is made up of the electric conducting material walking around medium substrate edge.
Concrete, described region shape is circular.
Preferably, described line of rabbet joint camber.
Further, described region shape is regular polygon.
Concrete, described regular polygon is positive 4n limit shape, n=1,2,3 ...
Preferably, the described line of rabbet joint is orthogonal.
Further, described input is connected to the centre on the 1st limit, and described output is connected to the centre on the (n+1)th limit.
Preferably, described input is identical with output end structure, is made up of one section of microstrip line with described regional connectivity.
Further, described microstrip line and described joint area place are provided with the line of rabbet joint.
The beneficial effects of the utility model it is possible to realize two transmission zeros, have good frequency selectivity.Adopt a line of rabbet joint to realize the disturbance of degenerate mode, have that structure is simple, volume is little, small loss and other features.Only use a cavity just to achieve two transmission zeros, thus have less volume than traditional integral wave guide filter, less loss.This filter adopts individual layer integrated wave guide structure, and make simple, cost is low, is suitable for batch production, is easy to integrated with active circuit, for metal waveguide filter, has larger advantage.
Accompanying drawing explanation
Fig. 1 is microstrip circuit structural representation;
Fig. 2 is the B-B cutaway view of Fig. 1;
Fig. 3 is the structural representation of embodiment 1;
Fig. 4 is the A-A cutaway view of Fig. 3;
Fig. 5 is the frequency response characteristic schematic diagram that enforcement 1 emulates and surveys;
Fig. 6 is the structural representation of embodiment 2;
Fig. 7 is the structural representation of embodiment 3.
Embodiment
Below in conjunction with drawings and Examples, describe the technical solution of the utility model in detail.
The utility model provides a kind of integrated waveguide dual mode filter with good frequency selectivity, and mainly based on Integrated Waveguide Technology, single chamber bimodulus is theoretical, is applicable to very much being applied to microwave circuit field.
The medium substrate upper surface that dual mode filter of the present utility model is used and lower surface are covered with conductive layer respectively, and short circuit via-hole array is through medium substrate, top surface conductive layers and lower surface conductive layer.In this panel region that short circuit through hole surrounds, the conductive layer of medium substrate upper surface, the conductive layer of lower surface and short circuit through hole form a waveguide cavity (also referred to as integrated waveguide chamber) jointly.The short circuit through hole of dense arrangement is concerning the conduction sidewall can regarding this waveguide cavity microwave as, and the conductive layer of medium substrate upper surface and the conductive layer of lower surface form the upper and lower surface of this waveguide cavity respectively.At two, the conductive layer edge orthogonal direction in waveguide cavity front, input and output are set respectively, by adjustment input and output in the position at cavity edge, this structure can encourage the TE of waveguide cavity preferably 101, TE 102and TE 201isotype.By etching one section of inclination line of rabbet joint in cavity front side conductive layer, the TE of cavity partly can be suppressed 101pattern, the TE of disturbance cavity 102and TE 201pattern, and implementation pattern coupling.By adjusting position (comprising line of rabbet joint centre coordinate and the anglec of rotation), the size (comprising width and the length of the line of rabbet joint) of the line of rabbet joint, TE can be made 102and TE 201pattern has suitable size, and other pattern can be utilized to carry out implementation pattern cross-couplings, to produce required transmission zero.Meanwhile, the position of transmission zero also can be moved by the position and size adjusting the line of rabbet joint.In this filter, the spacing of short circuit through hole is less than or equal to the twice of through-hole diameter usually, for the short circuit through hole at medium substrate edge, the electric conducting material walking around medium substrate edge can be adopted to form, as coating electrically conductive silica gel, and weld metal line card etc.Consider the feature of microwave transmission, short circuit through-hole spacing should be far smaller than the operation wavelength of filter, ensures microwave transmitting in cavity.In engineering, normal employing diameter d is the plated-through hole of 0.5mm, and the interval a between hole gets 1mm, and the waveguide cavity that just can meet general microwave frequency band normally works.
The integrated waveguide dual mode filter of line of rabbet joint disturbance of the present utility model, an integral waveguide cavity can realize the function of two single-mode resonant cavitys, by the cross-linked size of adjustment modes, two transmission zeros can be produced at passband two ends, it is simple that the integral wave guide filter designed has structure, volume is little, the feature that frequency selectivity is good.
Embodiment 1
As shown in Figure 3 and Figure 4, the integrated waveguide dual mode filter of this line of rabbet joint disturbance, comprises medium substrate 2 and is attached to the above-mentioned conductive layer 1 in medium substrate 2 front and the conductive layer 3 at the back side.The conductive layer 1 in medium substrate 2 front there is the square area that the short circuit through hole 10 of linear array surrounds.Short circuit through hole 10 is electrically connected with the conductive layer 1 in medium substrate front and the conductive layer 3 at the back side, forms the square-wave guide cavity that a thickness is identical with medium substrate 2.On conductive layer 1, the first edge of square area is connected with input 13, and Second Edge is along being connected with output 14, and this input 13 and output 14 lay respectively at two orthogonal directions of square area.In square area, be furnished with a line of rabbet joint 11, the line of rabbet joint 11 is rectangular channel, and it is centrally located on the perpendicular bisector of input 13 and output 14, and this line of rabbet joint 11 is used for disturbance adjust degenerate mode TE 102and TE 201size, thus utilize these two patterns to realize single chamber dual mode filter.
In this example, input 13 is identical with output 14 structure, all be made up of one section of microstrip line be communicated with conductive layer 1 square area, and microstrip line both sides and square area junction are provided with the line of rabbet joint 12, may be used for adjustment input and output signal size, degenerate mode TE in waveguide cavity can also be affected 102and TE 201distribution.
Originally in executing, select dielectric constant to be 2.2, thickness is the Rogers5880 material medium substrate of 0.5mm.The frequency response characteristic of emulation and actual measurement as shown in Figure 5.As seen from the figure, the return loss of test is better than-15.6dB, and in-band insertion loss is about 2.0dB, and this loss contains test splice, the impact of microstrip line and co-planar waveguide.Testing and simulation result is very consistent, has two limits, illustrate that filter is chummy by two degenerate mode couplings in the passband of filter.At the stopband up and down of filter, two obvious transmission zeros can be found, illustrate that this filter has good frequency selective characteristic.
Embodiment 2
As shown in Figure 6, the integrated waveguide dual mode filter of this routine line of rabbet joint disturbance, the region shape that short circuit through hole 10 regularly arranged on the conductive layer 1 in medium substrate 2 front surrounds, for circular, form the circular waveguide chamber of thickness and medium substrate 2 equal thickness, has the characteristic similar to circular metal waveguide cavity.The corresponding line of rabbet joint 11 is also the circular arc line of rabbet joint concentric with circular waveguide chamber.This routine filter, equally can by filter parameter such as adjustment such as adjustment arc-shaped slot linear dimension and direction of rotation etc.Other structures of this example are see the description of embodiment 1.
Embodiment 3
The integrated waveguide dual mode filter of this routine line of rabbet joint disturbance, the region shape that short circuit through hole 10 regularly arranged on the conductive layer 1 in medium substrate 2 front surrounds is for being octagon, the i.e. positive 4n limit shape of corresponding n=2, forms the octagon waveguide cavity of thickness and medium substrate 2 equal thickness.As shown in Figure 7.The input 13 of this octagon waveguide cavity is connected to the centre on octagon the 1st limit, and output is connected to the centre on octagon the 3rd limit.Octagon the 1st limit and the 3rd limit are just in time in two orthogonal directions in octagon region.Other structures of this example are see the description of embodiment 1.
The integrated waveguide dual mode filter of the utility model line of rabbet joint disturbance; be not limited to the description of above-described embodiment; particularly waveguide cavity shape; except the shape of foregoing description; also other shapes can be adopted; as rectangle, ellipse etc., those skilled in the art carry out any equivalent replacement according to foregoing description, distortion all belongs to protection range of the present utility model.

Claims (10)

1. the integrated waveguide dual mode filter of line of rabbet joint disturbance, comprise medium substrate and conductive layer, described conductive layer is attached to described medium substrate front and back, it is characterized in that, the region that on the conductive layer in described medium substrate front, the short circuit through hole of regular arrangement surrounds, described short circuit through hole is electrically connected with the conductive layer of medium substrate front and back, described regional edge is along being connected with input and output, described input and output lay respectively at two orthogonal directions in described region, a line of rabbet joint is furnished with in described region, the described line of rabbet joint is crossing with the perpendicular bisector of described input and output.
2. the integrated waveguide dual mode filter of line of rabbet joint disturbance according to claim 1, is characterized in that, the short circuit through hole being positioned at described medium substrate edge is made up of the electric conducting material walking around medium substrate edge.
3. the integrated waveguide dual mode filter of line of rabbet joint disturbance according to claim 1 and 2, is characterized in that, described region shape is circular.
4. the integrated waveguide dual mode filter of line of rabbet joint disturbance according to claim 3, is characterized in that, described line of rabbet joint camber.
5. the integrated waveguide dual mode filter of line of rabbet joint disturbance according to claim 1 and 2, is characterized in that, described region shape is regular polygon.
6. the integrated waveguide dual mode filter of line of rabbet joint disturbance according to claim 5, is characterized in that, described regular polygon is positive 4n limit shape, n=1,2,3 ...
7. the integrated waveguide dual mode filter of line of rabbet joint disturbance according to claim 6, is characterized in that, the described line of rabbet joint is orthogonal.
8. the integrated waveguide dual mode filter of line of rabbet joint disturbance according to claim 6, is characterized in that, described input is connected to the centre on the 1st limit, and described output is connected to the centre on the (n+1)th limit.
9. the integrated waveguide dual mode filter of line of rabbet joint disturbance according to claim 1 and 2, is characterized in that, described input is identical with output end structure, is made up of one section of microstrip line with described regional connectivity.
10. the integrated waveguide dual mode filter of line of rabbet joint disturbance according to claim 9, is characterized in that, described microstrip line and described joint area place are provided with the line of rabbet joint.
CN201420638418.0U 2014-10-30 2014-10-30 The integrated waveguide dual mode filter of line of rabbet joint disturbance Expired - Fee Related CN204167446U (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108539338A (en) * 2018-05-21 2018-09-14 东南大学 A kind of a quarter mould substrate integral wave guide filter based on notching construction
WO2019062578A1 (en) * 2017-09-27 2019-04-04 深圳大学 Duplexer based on elliptical micro-strip structure
CN114142193A (en) * 2021-12-02 2022-03-04 昆山鸿永微波科技有限公司 Dual-mode high-reliability silicon-based filter and manufacturing method thereof
CN114142192A (en) * 2021-12-02 2022-03-04 昆山鸿永微波科技有限公司 Low-loss silicon-based filter and manufacturing method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019062578A1 (en) * 2017-09-27 2019-04-04 深圳大学 Duplexer based on elliptical micro-strip structure
CN108539338A (en) * 2018-05-21 2018-09-14 东南大学 A kind of a quarter mould substrate integral wave guide filter based on notching construction
CN108539338B (en) * 2018-05-21 2019-09-10 东南大学 A kind of a quarter mould substrate integral wave guide filter based on notching construction
CN114142193A (en) * 2021-12-02 2022-03-04 昆山鸿永微波科技有限公司 Dual-mode high-reliability silicon-based filter and manufacturing method thereof
CN114142192A (en) * 2021-12-02 2022-03-04 昆山鸿永微波科技有限公司 Low-loss silicon-based filter and manufacturing method thereof

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150218

Termination date: 20151030

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