CN114142192A - Low-loss silicon-based filter and manufacturing method thereof - Google Patents
Low-loss silicon-based filter and manufacturing method thereof Download PDFInfo
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- CN114142192A CN114142192A CN202111454087.6A CN202111454087A CN114142192A CN 114142192 A CN114142192 A CN 114142192A CN 202111454087 A CN202111454087 A CN 202111454087A CN 114142192 A CN114142192 A CN 114142192A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/212—Frequency-selective devices, e.g. filters suppressing or attenuating harmonic frequencies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
Abstract
The invention discloses a low-loss silicon-based filter and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: the n silicon cavity resonance units respectively comprise a first metal layer, a thick film layer, a high-resistance silicon medium layer and a second metal layer, the first metal layer, the thick film layer, the high-resistance silicon medium layer and the second metal layer are sequentially stacked up and down, a silicon pit is arranged on the high-resistance silicon medium layer and is located under the corresponding first metal layer, and the bottom of the silicon pit is in a zigzag or continuous wavy shape. Through the mode, the low-loss silicon-based filter and the manufacturing method thereof provided by the invention realize the purposes of improving the Q value of the silicon-based filter, reducing the loss and realizing miniaturization by etching the silicon pits on the high-resistance silicon medium layer and forming the sawtooth-shaped or continuous wave-shaped structure at the bottom of the silicon pits.
Description
Technical Field
The invention relates to the field of filters, in particular to a low-loss silicon-based filter and a manufacturing method thereof.
Background
The filter plays an important role in frequency-selective filtering in radio frequency and microwave systems, and particularly, the filter can allow an electric signal with a certain frequency to pass through and block electric signals with other frequencies. The main performance indexes of the filter include insertion loss, bandwidth, out-of-band selectivity, circuit size and the like, the loss of the filter is reduced, the out-of-band rejection is improved, and the miniaturization of the circuit is always a key design difficulty of the filter.
The traditional filter comprises a cavity filter, an LC filter and a plane filter, wherein the cavity filter is formed by integrally cutting metal, the LC filter is formed by combining an inductor, a capacitor and a resistor, the plane filter is made of a transmission line and a PCB (printed circuit board), the problems of large size, difficulty in interconnection and integration with multiple chips and the like exist, the development of the filter in the aspect of a small-sized chip filter is influenced, and improvement on the aspects of improving a Q value and reducing loss is needed.
Disclosure of Invention
The invention mainly solves the technical problem of providing a low-loss silicon-based filter and a manufacturing method thereof, which can reduce the volume, reduce the loss and improve the Q value.
In order to solve the technical problems, the invention adopts a technical scheme that: there is provided a low loss silicon based filter comprising: the n silicon cavity resonance units respectively comprise a first metal layer, a thick film layer, a high-resistance silicon medium layer and a second metal layer, the first metal layer, the thick film layer, the high-resistance silicon medium layer and the second metal layer are sequentially stacked up and down, a silicon pit is arranged on the high-resistance silicon medium layer and is located under the corresponding first metal layer, and the bottom of the silicon pit is in a zigzag or continuous wavy shape.
In a preferred embodiment of the present invention, a plurality of through holes are disposed at an edge of the silicon cavity resonance unit, the through holes sequentially penetrate through the first metal layer, the thick film layer, the high-resistance silicon dielectric layer and the second metal layer, and a metal deposition layer is disposed on an inner wall surface of the through holes.
In a preferred embodiment of the present invention, the through hole is a full through hole or a half through hole.
In a preferred embodiment of the invention, the number n of the silicon cavity resonance units is not less than 1 and is an integer, when n is greater than 1, n silicon cavity resonance units are arranged into a matrix, and half through holes at the edges of two adjacent silicon cavity resonance units are correspondingly combined into a full through hole.
In a preferred embodiment of the present invention, the silicon pits are etched on the high-resistance silicon dielectric layer without etching through.
In a preferred embodiment of the present invention, the present invention further includes an input feed line slot, a first defect coupling slot, an output feed line slot and a second defect coupling slot, where the input feed line slot and the first defect coupling slot are disposed on the first metal layer on the head silicon cavity resonance unit in any row of the silicon cavity resonance unit matrix, and the input feed line slot extends inward from the edge corresponding to the first metal layer and is communicated with the first defect coupling slot for inputting a signal to be filtered;
the output feed line slot and the second defect coupling slot are arranged on the first metal layer on the last silicon cavity resonance unit of any row in the matrix of the silicon cavity resonance units, the output feed line slot is communicated with the second defect coupling slot and extends to the edge corresponding to the first metal layer, and a filtering signal is output.
In a preferred embodiment of the present invention, the depths of the input feed line groove, the first defective coupling groove, the output feed line groove and the second defective coupling groove correspond to the thickness of the first metal layer.
In a preferred embodiment of the invention, the saw-tooth shape comprises a plurality of ribs of rectangular or triangular cross section spaced apart from each other.
In order to solve the technical problems, the invention adopts a technical scheme that: the method for manufacturing the low-loss silicon-based filter comprises the following steps:
polishing two surfaces of the high-resistance silicon medium to form a high-resistance silicon medium layer;
etching a silicon pit with a required size on the front surface of the high-resistance silicon medium layer, and forming a zigzag or continuous wavy structure at the bottom of the silicon pit;
forming a thick film layer above the high-resistance silicon medium layer;
sputtering and electroplating a first metal layer on the thick film layer, and electroplating a second metal layer below the high-resistance silicon dielectric layer;
etching the edges of the first metal layer, the thick film layer, the high-resistance silicon dielectric layer and the second metal layer in a penetrating way to form a penetrating through hole;
and sputtering a metal deposition layer on the periphery of the inner wall of the through hole.
The invention has the beneficial effects that: according to the low-loss silicon-based filter and the manufacturing method thereof, the silicon pits are etched on the high-resistance silicon medium layer, and the sawtooth-shaped or continuous wave-shaped structure is formed at the bottom of each silicon pit, so that the purposes of improving the Q value of the silicon-based filter, reducing the loss and miniaturizing the silicon-based filter are achieved, different filter resonant frequencies can be obtained by different sizes of the silicon pits, and the sawtooth-shaped or continuous wave-shaped structure at the bottom of each silicon pit is added, so that the out-of-band suppression degree is improved, and the design requirements of a silicon-based filter chip with a high Q value, small insertion loss and miniaturization are met.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive efforts, wherein:
fig. 1 is a schematic structural diagram of a low-loss silicon-based filter according to a preferred embodiment of the present invention;
FIG. 2 is a-a of FIG. 1，To a cross-sectional view.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 to 2, an embodiment of the present invention includes:
the low loss silicon based filter shown in fig. 1 comprises: n silicon cavity resonance units 11, input feed line groove 14, first defect coupling groove 15, output feed line groove 16 and second defect coupling groove 17, the number n of silicon cavity resonance units is more than or equal to 1 and is an integer, when n is more than 1, n silicon cavity resonance units are arranged into a matrix, in this embodiment, n is 3, and 3 silicon cavity resonance units are respectively a first silicon cavity resonance unit 111, a second silicon cavity resonance unit 112 and a third silicon cavity resonance unit 113 which are sequentially arranged.
As shown in fig. 2, each silicon cavity resonance unit includes a first metal layer 21, a thick film layer 22, a high-resistance silicon dielectric layer 23, and a second metal layer 24, the first metal layer 21, the thick film layer 22, the high-resistance silicon dielectric layer 23, and the second metal layer 24 are sequentially stacked up and down, a silicon pit 13 (including a first silicon pit 131 in the first silicon cavity resonance unit 111, a second silicon pit 132 in the second silicon cavity resonance unit 112, and a third silicon pit 133 in the third silicon cavity resonance unit 113) is disposed on the high-resistance silicon dielectric layer 23, and the cross section of the silicon pit 13 is square or isosceles trapezoid, and can be formed on the high-resistance silicon dielectric layer 23 by etching without etching through.
The silicon pits 13 are respectively positioned right below the corresponding first metal layers 22, the etching size of the silicon pits 13 can influence the resonance frequency of the filter, and the larger the silicon pits are, the lower the resonance frequency is, and the effect of miniaturizing the filter can be achieved. The bottom of the silicon pit is in a zigzag shape or a continuous wave shape, the zigzag shape comprises a plurality of rectangular or triangular cross-section convex ribs distributed at intervals, and in the embodiment, as shown in fig. 2, the zigzag shape comprises a plurality of rectangular convex ribs distributed at intervals. The Q value of the silicon-based filter is improved through a sawtooth-shaped or continuous wave-shaped structure formed by the silicon pits and the bottom, and the loss is favorably reduced.
The edge of the silicon cavity resonance unit is provided with a plurality of through holes 12, the through holes 12 sequentially penetrate through the first metal layer 21, the thick film layer 22, the high-resistance silicon medium layer 23 and the second metal layer 24, and the inner wall surfaces of the through holes 12 are provided with metal deposition layers. In this embodiment, the through hole 12 is a full through hole 122 or a half through hole 121, and the half through holes 121 at the edges of two adjacent silicon cavity resonant units are correspondingly combined into the full through hole 122.
The input feed line slot 14 and the first defect coupling slot 15 are arranged on the first metal layer 21 on the head silicon cavity resonance unit (the first silicon cavity resonance unit 111 in fig. 1) in any row of the silicon cavity resonance unit matrix, the input feed line slot 14 extends inwards from the edge corresponding to the first metal layer 21 and is communicated with the first defect coupling slot 15, and the input of a signal to be filtered is carried out;
the output feed line slot 16 and the second defective coupling slot 17 are disposed on the first metal layer on the last silicon cavity resonance unit (the third silicon cavity resonance unit 113 in fig. 1) in any row of the matrix of the silicon cavity resonance units, and the output feed line slot 16 is communicated with the second defective coupling slot 17 and extends to the edge corresponding to the first metal layer, so as to output the filtering signal. In the present embodiment, the depths of the input feeding line slot 14, the first defect coupling slot 15, the output feeding line slot 16 and the second defect coupling slot 17 correspond to the thickness of the first metal layer 21, and a thick film layer 22 is present.
A method for manufacturing a low-loss silicon-based filter comprises the following steps:
polishing two surfaces of the high-resistance silicon medium to form a high-resistance silicon medium layer 23;
etching a silicon pit 13 with a required size on the front surface of the high-resistance silicon medium layer 23, and forming a zigzag or continuous wavy structure at the bottom of the silicon pit 13;
forming a thick film layer 22 above the high-resistance silicon medium layer 23;
sputtering and electroplating a first metal layer 21 on the thick film layer 22, and electroplating a second metal layer 24 below the high-resistance silicon dielectric layer 23;
the edges of the first metal layer 21, the thick film layer 22, the high-resistance silicon dielectric layer 23 and the second metal layer 24 are etched in a penetrating way to form a penetrating through hole 12;
and metal deposition layers are sputtered on the periphery of the inner wall of the through hole 12 to form silicon cavity resonance units, and the n silicon cavity resonance units are arranged into a matrix, so that the production difficulty is low.
In summary, the low-loss silicon-based filter and the manufacturing method thereof provided by the invention particularly design the silicon pits and the sawtooth-shaped or continuous wave-shaped structures at the bottom of the silicon pits, which are beneficial to reducing the size of the filter, reducing the loss and improving the Q value, thereby improving the out-of-band rejection degree.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, or direct or indirect applications in other related fields, which are made by the contents of the present specification, are included in the scope of the present invention.
Claims (9)
1. A low loss silicon based filter, comprising: the n silicon cavity resonance units respectively comprise a first metal layer, a thick film layer, a high-resistance silicon medium layer and a second metal layer, the first metal layer, the thick film layer, the high-resistance silicon medium layer and the second metal layer are sequentially stacked up and down, a silicon pit is arranged on the high-resistance silicon medium layer and is located under the corresponding first metal layer, and the bottom of the silicon pit is in a zigzag or continuous wavy shape.
2. The low-loss silicon-based filter according to claim 1, wherein a plurality of through holes are formed at the edge of the silicon cavity resonance unit, the through holes sequentially penetrate through the first metal layer, the thick film layer, the high-resistance silicon dielectric layer and the second metal layer, and a metal deposition layer is formed on the inner wall surface of each through hole.
3. The low loss silicon based filter according to claim 2, wherein said via is a full via or a half via.
4. The low-loss silicon-based filter according to claim 3, wherein the number n of the silicon cavity resonance units is greater than or equal to 1 and is an integer, when n is greater than 1, n silicon cavity resonance units are arranged in a matrix, and half through holes at the edges of two adjacent silicon cavity resonance units are correspondingly combined to form a full through hole.
5. The low loss silicon based filter according to claim 1, wherein said silicon pits are etched in the high resistance silicon dielectric layer without etching through.
6. The low-loss silicon-based filter according to claim 4, further comprising an input feed line slot, a first defect coupling slot, an output feed line slot and a second defect coupling slot, wherein the input feed line slot and the first defect coupling slot are arranged on the first metal layer on the first silicon cavity resonance unit in any row of the silicon cavity resonance unit matrix, the input feed line slot extends inwards from the edge of the corresponding first metal layer and is communicated with the first defect coupling slot, and the input of the signal to be filtered is performed;
the output feed line slot and the second defect coupling slot are arranged on the first metal layer on the last silicon cavity resonance unit of any row in the matrix of the silicon cavity resonance units, the output feed line slot is communicated with the second defect coupling slot and extends to the edge corresponding to the first metal layer, and a filtering signal is output.
7. The low loss silicon based filter according to claim 6, wherein the input feed line slot, first defect coupling slot, output feed line slot and second defect coupling slot have a depth corresponding to the thickness of the first metal layer.
8. The low loss silicon based filter according to claim 1, wherein the saw-tooth shape comprises a plurality of spaced apart ribs of rectangular or triangular cross-section.
9. A method for manufacturing a low-loss silicon-based filter according to any one of claims 1 to 8, comprising the steps of:
polishing two surfaces of the high-resistance silicon medium to form a high-resistance silicon medium layer;
etching a silicon pit with a required size on the front surface of the high-resistance silicon medium layer, and forming a zigzag or continuous wavy structure at the bottom of the silicon pit;
forming a thick film layer above the high-resistance silicon medium layer;
sputtering and electroplating a first metal layer on the thick film layer, and electroplating a second metal layer below the high-resistance silicon dielectric layer;
etching the edges of the first metal layer, the thick film layer, the high-resistance silicon dielectric layer and the second metal layer in a penetrating way to form a penetrating through hole;
and sputtering a metal deposition layer on the periphery of the inner wall of the through hole.
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