CN112466854A - Silicon-based filter chip and frequency offset correction method thereof - Google Patents
Silicon-based filter chip and frequency offset correction method thereof Download PDFInfo
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- CN112466854A CN112466854A CN202011424346.6A CN202011424346A CN112466854A CN 112466854 A CN112466854 A CN 112466854A CN 202011424346 A CN202011424346 A CN 202011424346A CN 112466854 A CN112466854 A CN 112466854A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 130
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 130
- 239000010703 silicon Substances 0.000 title claims abstract description 130
- 238000012937 correction Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000010931 gold Substances 0.000 claims abstract description 3
- 229910052737 gold Inorganic materials 0.000 claims abstract description 3
- 230000008878 coupling Effects 0.000 claims description 46
- 238000010168 coupling process Methods 0.000 claims description 46
- 238000005859 coupling reaction Methods 0.000 claims description 46
- 230000007547 defect Effects 0.000 claims description 34
- 239000011159 matrix material Substances 0.000 claims description 12
- 238000001914 filtration Methods 0.000 claims description 9
- 230000002950 deficient Effects 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000012545 processing Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003094 perturbing effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02393—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor
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- Condensed Matter Physics & Semiconductors (AREA)
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to a silicon-based filter chip and a frequency offset correction method thereof. Belonging to the technical field of filter circuits. The method comprises the following steps: the silicon cavity resonance units are arranged in a vertical mode, and each silicon cavity resonance unit comprises a first metal layer, a high-resistance silicon medium layer and a second metal layer which are sequentially arranged from top to bottom; the silicon cavity resonance unit consists of a full through hole and a half through hole which penetrate through the first metal layer, the high-resistance silicon dielectric layer and the second metal layer, and the side wall of the through hole is sputtered and plated with gold; the laser penetrates through the through hole, penetrates through the first metal layer, the high-resistance silicon dielectric layer and the second metal layer, and is distributed on two sides of the through hole of the two adjacent silicon cavity resonance units or at the joint of the metal layers of the two adjacent silicon cavity resonance units. The pass band frequency can be moved upwards to realize the correction function of downward shift of the pass band frequency by burning holes on corresponding positions by laser points. Has the advantages of high Q value and low loss.
Description
Technical Field
The invention relates to a silicon-based filter chip and a frequency offset correction method thereof. Belonging to the technical field of filter circuits.
Background
The filter plays an important role in frequency-selective filtering in a radio frequency/microwave system, and the main performance indexes comprise difference loss, bandwidth, out-of-band selectivity, circuit size and the like. The traditional cavity filter and the LC filter have the problems of large volume, high manufacturing cost, difficulty in being integrated with multi-chip interconnection and the like.
The silicon-based filter realized by the silicon micro electro mechanical system technology has the obvious advantages of high Q value, low differential loss and small volume in a millimeter wave frequency band, can be compatible with a conventional Monolithic Microwave Integrated Circuit (MMIC) process and the like, not only becomes the development trend of various electronic devices, but also becomes the best means for solving the problem of the Monolithic integration of the millimeter wave receiving and transmitting component. However, the processing technology is difficult and unstable, and a mature process flow is not formed, so that the phenomenon of frequency deviation of the processed product batch is a technical problem to be solved.
Disclosure of Invention
The invention mainly solves the technical problem of providing a silicon-based filter chip capable of carrying out frequency offset correction and a frequency offset correction method thereof. The method can solve all frequency deviation problems of the batch by one-time laser correction, is efficient and effective, does not need secondary processing, and can process the whole wafer, thereby greatly reducing the processing cost.
A silicon-based filter chip comprising: the silicon cavity resonance units are arranged in a vertical mode, and each silicon cavity resonance unit comprises a first metal layer, a high-resistance silicon medium layer and a second metal layer which are sequentially arranged from top to bottom;
the silicon cavity resonant unit array further comprises an input feed line slot, a first defect coupling slot, an output feed line slot and a second defect coupling slot, wherein the input feed line slot and the first defect coupling slot are arranged on a first metal layer on a head silicon cavity resonant unit of any line in the silicon cavity resonant unit matrix, and the input feed line slot is communicated with the first defect coupling slot for inputting a signal to be filtered; the output feed line slot and the second defect coupling slot are arranged on the first metal layer on the last-position silicon cavity resonance unit of any row in the silicon cavity resonance unit matrix, and the output feed line slot is communicated with the second defect coupling slot and outputs a filtering signal;
the laser through holes are arranged, penetrate through the first metal layer, the high-resistance silicon medium layer and the second metal layer, and are distributed on two sides of the through holes of the two adjacent silicon cavity resonance units or at the metal layer connection positions of the two adjacent silicon cavity resonance units.
The edge of the silicon cavity resonance unit is provided with a plurality of through holes, the through holes penetrate through the first metal layer, the high-resistance silicon dielectric layer and the second metal layer, and the side walls of the through holes are sputtered and plated with gold.
The through holes are full through holes or half through holes.
N is not less than 1 and is an integer, when n is greater than 1, n silicon cavity resonance units are arranged into a matrix, and half through holes at the edges of two adjacent silicon cavity resonance units are correspondingly combined into a full through hole.
The input feed line slot and the output feed line slot extend to the edge of the first metal layer, and the depths of the input feed line slot, the first defect coupling slot, the output feed line slot and the second defect coupling slot are equal to the thickness of the first metal layer.
The laser through hole is formed by laser breakdown of the first metal layer, the high-resistance silicon dielectric layer and the second metal layer.
A frequency offset correction method for a silicon-based filter chip comprises the following steps: the silicon cavity resonance units are arranged in a vertical mode, and each silicon cavity resonance unit comprises a first metal layer, a high-resistance silicon medium layer and a second metal layer which are sequentially arranged from top to bottom;
the silicon cavity resonant unit array further comprises an input feed line slot, a first defect coupling slot, an output feed line slot and a second defect coupling slot, wherein the input feed line slot and the first defect coupling slot are arranged on a first metal layer on a head silicon cavity resonant unit of any line in the silicon cavity resonant unit matrix, and the input feed line slot is communicated with the first defect coupling slot for inputting a signal to be filtered; the output feed line slot and the second defect coupling slot are arranged on the first metal layer on the last-position silicon cavity resonance unit of any row in the silicon cavity resonance unit matrix, and the output feed line slot is communicated with the second defect coupling slot and outputs a filtering signal;
laser through holes are arranged, penetrate through the first metal layer, the high-resistance silicon dielectric layer and the second metal layer, and are distributed on two sides of the through holes of the two adjacent silicon cavity resonance units, or the metal layers of the two adjacent silicon cavity resonance units are connected;
the laser through hole is formed by breaking down the first metal layer, the high-resistance silicon dielectric layer and the second metal layer through laser point burning;
when the frequency of the processed silicon-based filter chip slightly shifts to low frequency, laser penetrating through holes are punched on two sides of through holes of two adjacent silicon cavity resonance units, so that the passband frequency can be shifted upwards to realize the function of frequency shift correction;
when the frequency of the processed silicon-based filter chip is greatly shifted to a low frequency, the laser through hole is punched at the joint of the metal layers of the two adjacent silicon cavity resonance units, the passband frequency can be greatly shifted upwards, the shifting degree is related to the moving distance of the laser through hole to the silicon cavity resonance units, and the shifting degree is larger towards the inner part, so that the function of frequency shift correction is realized.
The frequency offset correction technology of the silicon-based filter chip provided by the invention can be used for processing the filter chip on a silicon chip by adopting a silicon-based micro-processing technology (etching, sputtering, electroplating and the like), has small volume and can realize multi-chip integration, and a similar waveguide is formed by etching through holes at the periphery of the silicon cavity resonance units and sputtering a metal deposition layer on the inner wall of the through holes.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of the present invention;
fig. 2 is a sectional view taken along line a-a of fig. 1.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 to 2, an embodiment of the present invention includes:
a silicon-based filter chip as shown in fig. 1, comprising: the laser penetrates through the through hole 13 and the silicon cavity resonance unit 11, in this embodiment, 3 silicon cavity resonance units are adopted, which are a first silicon cavity resonance unit 111, a second silicon cavity resonance unit 112 and a third silicon cavity resonance unit 113, and the first silicon cavity resonance unit 111, the second silicon cavity resonance unit 112 and the third silicon cavity resonance unit 113 are sequentially arranged in a line.
As shown in fig. 2, each silicon cavity resonant unit includes a first metal layer 21, a high-resistance silicon dielectric layer 22, and a second metal layer 23 sequentially disposed from top to bottom, and the first metal layer 21 and the second metal layer 23 may be formed on the high-resistance silicon dielectric layer 22 through sputtering and electroplating processes. The resistivity of the high-resistance silicon medium layer 22 is more than or equal to 3000 omega/cm, and the filter has the advantages of small volume, small insertion loss and low transmission loss of electromagnetic waves when being used in millimeter wave bands by adopting the high-resistance silicon medium layer 22.
In this embodiment, the first metal layer 21 and the second metal layer 23 with a thickness of 10um and the high-resistance silicon dielectric layer 22 with a thickness of 400um are used, and the silicon cavity resonance unit 11 is rectangular, has a length of 3mm and a width of 1.54mm, and is small in size.
The edge of silicon cavity resonance unit 11 is provided with a plurality of through-holes 12, through-hole 12 runs through first metal level 21, high resistant silicon dielectric layer 22 and second metal level 23, and the inner wall surface is provided with the metal deposition layer to form the silicon cavity that is used for the resonance, thereby make the electromagnetic wave can't outwards reveal away by the silicon cavity, energy transmission loss is little, makes the wave filter have the advantage that the insertion loss is little. The through hole 12 is a full through hole 122 or a half through hole 121. As shown in fig. 1, the half vias 121 at the edges of two adjacent silicon cavity resonant units 11 are correspondingly combined into a full via structure.
The laser through hole 13 is formed by breaking down the first metal layer 21, the high-resistance silicon dielectric layer 22 and the second metal layer 23 by laser spot-firing, and is distributed on two sides 132 of the through holes of two adjacent silicon cavity resonance units, or at a metal layer joint 131 of the two adjacent silicon cavity resonance units. The laser through via 132 reduces the cavity size of the silicon cavity resonance unit 11 by increasing the size of the via 12, so as to achieve the purpose of improving the overall filtering frequency, but the adjustment range is small, and the laser through via is only used for correction under the condition that the processing batch generates slight low-frequency deviation.
The laser through hole 131 reduces the equivalent cavity size of the silicon cavity resonance unit 11 by perturbing the electromagnetic field of the silicon cavity resonance unit 11, so as to achieve the purpose of improving the overall filtering frequency, and the adjustment range is slightly larger, so that the laser through hole can be used for correction under the condition that the processing batch generates larger deviation to low frequency. The degree of the frequency shift-up is related to the distance 18 by which the laser via 131 moves into the silicon cavity resonance unit 11, and the more inward, the greater the degree of the shift-up in the effective range.
In order to realize the input and output of signals, an input feed line slot 14, a first defect coupling slot 15, an output feed line slot 16 and a second defect coupling slot 17 are also needed, wherein the input feed line slot 14 and the first defect coupling slot 15 are etched on a first metal layer on a head silicon cavity resonance unit of any line in a silicon cavity resonance unit matrix, and the input feed line slot 14 is communicated with the first defect coupling slot 15 for inputting signals to be filtered;
the output feed line slot 16 and the second defect coupling slot 17 are arranged on the first metal layer on the last silicon cavity resonance unit of any row in the silicon cavity resonance unit matrix, and the output feed line slot 16 is communicated with the second defect coupling slot 17 to output a filtering signal. As shown in fig. 1, the input feed line slot 14 and the output feed line slot 16 extend to the edge of the first metal layer, a signal to be filtered is input to the filter through the input feed line slot 14, and a filtered signal after filtering is output through the output feed line slot 16.
The depths of the input feed line slot 14, the first defect coupling slot 15, the output feed line slot 16 and the second defect coupling slot 17 correspond to the thickness of the first metal layer 21, and the input feed line slot 14 and the output feed line slot 16 can have impedance of 50 omega. In addition, the size of the first defective coupling groove 15 determines the coupling strength between the input feed line groove 14 and the silicon cavity resonance unit 111, and the size of the second defective coupling groove 17 determines the coupling strength between the output feed line groove 16 and the silicon cavity resonance unit 113, and specifically, the larger the sizes of the first defective coupling groove 15 and the second defective coupling groove 17, the larger the coupling strength between the input feed line groove 14 and the silicon cavity resonance unit 111, the larger the coupling strength between the output feed line groove 16 and the silicon cavity resonance unit 113. In this embodiment, the widths of the input feed line slot 14 and the output feed line slot 16 may be 88um, the gap between the two input feed line slots 14 may be 70um, the lengths of the first defective coupling slot 15 and the second defective coupling slot 17 may be 1.1mm, and the widths may be 0.22 mm.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by the present specification, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (7)
1. A silicon-based filter chip, comprising: the silicon cavity resonance unit comprises n silicon cavity resonance units, wherein each silicon cavity resonance unit comprises a first metal layer, a high-resistance silicon medium layer and a second metal layer which are sequentially arranged from top to bottom, and further comprises an input feed line slot, a first defect coupling slot, an output feed line slot and a second defect coupling slot, wherein the input feed line slot and the first defect coupling slot are arranged on the first metal layer on the first silicon cavity resonance unit in any line in the silicon cavity resonance unit matrix, and the input feed line slot is communicated with the first defect coupling slot and is used for inputting signals to be filtered; the output feed line slot and the second defect coupling slot are arranged on the first metal layer on the last-position silicon cavity resonance unit of any row in the silicon cavity resonance unit matrix, and the output feed line slot is communicated with the second defect coupling slot and outputs a filtering signal; the laser through holes are arranged, penetrate through the first metal layer, the high-resistance silicon medium layer and the second metal layer, and are distributed on two sides of the through holes of the two adjacent silicon cavity resonance units or at the metal layer connection positions of the two adjacent silicon cavity resonance units.
2. The silicon-based filter chip according to claim 1, wherein a plurality of through holes are formed in the edge of the silicon cavity resonance unit, the through holes penetrate through the first metal layer, the high-resistance silicon dielectric layer and the second metal layer, and the side walls of the through holes are sputtered and plated with gold.
3. The silicon-based filter chip of claim 2, wherein the through holes are full through holes or half through holes.
4. The silicon-based filter chip according to claim 1, wherein n is an integer greater than or equal to 1, when n is greater than 1, n silicon cavity resonance units are arranged in a matrix, and half through holes at the edges of two adjacent silicon cavity resonance units are correspondingly combined to form a full through hole.
5. The silicon-based filter chip of claim 1, wherein the input and output feed line slots extend to an edge of the first metal layer, and wherein the input feed line slot, the first defective coupling slot, the output feed line slot, and the second defective coupling slot have a depth equal to a thickness of the first metal layer.
6. The silicon-based filter chip according to claim 1, wherein the laser through via is formed by laser breakdown of the first metal layer, the high-resistance silicon dielectric layer and the second metal layer.
7. A frequency offset correction method for a silicon-based filter chip comprises the following steps: the silicon cavity resonance units are arranged in a vertical mode, and each silicon cavity resonance unit comprises a first metal layer, a high-resistance silicon medium layer and a second metal layer which are sequentially arranged from top to bottom; the silicon cavity resonant unit array further comprises an input feed line slot, a first defect coupling slot, an output feed line slot and a second defect coupling slot, wherein the input feed line slot and the first defect coupling slot are arranged on a first metal layer on a head silicon cavity resonant unit of any line in the silicon cavity resonant unit matrix, and the input feed line slot is communicated with the first defect coupling slot for inputting a signal to be filtered; the output feed line slot and the second defect coupling slot are arranged on the first metal layer on the last-position silicon cavity resonance unit of any row in the silicon cavity resonance unit matrix, and the output feed line slot is communicated with the second defect coupling slot and outputs a filtering signal; laser through holes are arranged, penetrate through the first metal layer, the high-resistance silicon dielectric layer and the second metal layer, and are distributed on two sides of the through holes of the two adjacent silicon cavity resonance units, or the metal layers of the two adjacent silicon cavity resonance units are connected; the laser through hole is formed by breaking down the first metal layer, the high-resistance silicon dielectric layer and the second metal layer through laser point burning;
when the frequency of the processed silicon-based filter chip slightly shifts to low frequency, laser penetrating through holes are punched on two sides of through holes of two adjacent silicon cavity resonance units, so that the passband frequency can be shifted upwards to realize the function of frequency shift correction;
when the frequency of the processed silicon-based filter chip is greatly shifted to a low frequency, the laser through hole is punched at the joint of the metal layers of the two adjacent silicon cavity resonance units, the passband frequency can be greatly shifted upwards, the shifting degree is related to the moving distance of the laser through hole to the silicon cavity resonance units, and the shifting degree is larger towards the inner part, so that the function of frequency shift correction is realized.
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| CN202011424346.6A CN112466854B (en) | 2020-12-09 | 2020-12-09 | Silicon-based filter chip and frequency offset correction method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114142192A (en) * | 2021-12-02 | 2022-03-04 | 昆山鸿永微波科技有限公司 | Low-loss silicon-based filter and manufacturing method thereof |
| CN114142193A (en) * | 2021-12-02 | 2022-03-04 | 昆山鸿永微波科技有限公司 | Dual-mode high-reliability silicon-based filter and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170237136A1 (en) * | 2016-02-16 | 2017-08-17 | Qingdao Haier Electronics Co., Ltd. | Four-mode defected ground structure filter |
| CN108808190A (en) * | 2018-06-27 | 2018-11-13 | 电子科技大学 | A kind of adjustable electromagnetism two dimension reconfigurable filter of frequency bandwidth |
| CN111463530A (en) * | 2020-04-10 | 2020-07-28 | 昆山鸿永微波科技有限公司 | Silicon-based filtering chip with tunable bandwidth |
-
2020
- 2020-12-09 CN CN202011424346.6A patent/CN112466854B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170237136A1 (en) * | 2016-02-16 | 2017-08-17 | Qingdao Haier Electronics Co., Ltd. | Four-mode defected ground structure filter |
| CN108808190A (en) * | 2018-06-27 | 2018-11-13 | 电子科技大学 | A kind of adjustable electromagnetism two dimension reconfigurable filter of frequency bandwidth |
| CN111463530A (en) * | 2020-04-10 | 2020-07-28 | 昆山鸿永微波科技有限公司 | Silicon-based filtering chip with tunable bandwidth |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114142192A (en) * | 2021-12-02 | 2022-03-04 | 昆山鸿永微波科技有限公司 | Low-loss silicon-based filter and manufacturing method thereof |
| CN114142193A (en) * | 2021-12-02 | 2022-03-04 | 昆山鸿永微波科技有限公司 | Dual-mode high-reliability silicon-based filter and manufacturing method thereof |
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