CN111261984B - Dielectric waveguide port coupling structure and dielectric waveguide duplexer - Google Patents
Dielectric waveguide port coupling structure and dielectric waveguide duplexer Download PDFInfo
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- CN111261984B CN111261984B CN202010064765.7A CN202010064765A CN111261984B CN 111261984 B CN111261984 B CN 111261984B CN 202010064765 A CN202010064765 A CN 202010064765A CN 111261984 B CN111261984 B CN 111261984B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
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Abstract
The invention relates to a dielectric waveguide port coupling structure and a dielectric waveguide duplexer, wherein the dielectric waveguide port coupling structure comprises a dielectric single cavity, the dielectric single cavity is provided with a metalized through hole penetrating through the upper surface and the lower surface of the dielectric single cavity, the metalized through hole is close to one side of the dielectric single cavity, and the metalized through hole is used for connecting an input/output device to realize port input/output signals; and a reinforced coupling structure for reinforcing the coupling strength of the port is arranged on the upper surface or the lower surface of the medium single cavity at a position close to the metalized through hole. The invention can realize stronger port coupling and can improve the performance of the filter.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of microwave communication, in particular to a dielectric waveguide port coupling structure and a dielectric waveguide duplexer.
[ background of the invention ]
The coupling mode of the dielectric waveguide port of the existing filter is generally that a metallized blind hole is arranged at the central position of the upper surface or the lower surface of a dielectric single cavity, and the metallized blind hole is connected with an input/output device to realize the input/output signal of the port of the filter. The metallized blind hole is positioned at the central position of the upper surface or the lower surface of the dielectric single cavity, the generated resonance is closer to the passband of the filter, the influence on the passband is larger, the performance of the filter is greatly reduced, the port coupling strength of the structure is weaker, the interference between other dielectric cavities of the filter is stronger, the input and output of the port of the filter, such as a narrow-band dielectric waveguide filter, with weaker port coupling strength requirement can only be met, and the input and output of the port of the filter, such as a broadband dielectric waveguide filter, a dielectric waveguide duplexer, a multiplexer, a combiner and the like, with stronger port coupling strength requirement can not be met.
Therefore, an improved dielectric waveguide port coupling structure is needed to satisfy the input/output of the port of the filter having a strong requirement on the port coupling strength, such as a wideband dielectric waveguide filter, a dielectric waveguide duplexer, a multiplexer, a combiner, etc., and to improve the performance of the filter.
[ summary of the invention ]
The present invention is directed to overcome the above-mentioned technical deficiencies, and provides a dielectric waveguide port coupling structure and a dielectric waveguide duplexer, which can achieve stronger port coupling and improve the performance of a filter.
The invention provides a dielectric waveguide port coupling structure, which comprises a dielectric single cavity, wherein the dielectric single cavity is provided with a metalized through hole penetrating through the upper surface and the lower surface of the dielectric single cavity, the metalized through hole is close to one side of the dielectric single cavity, and the metalized through hole is used for connecting an input/output device to realize port input/output signals; and a reinforced coupling structure for reinforcing the coupling strength of the port is arranged on the upper surface or the lower surface of the medium single cavity at a position close to the metalized through hole.
Furthermore, a metalized frequency modulation hole is formed in the center of the upper surface or the lower surface of the medium single cavity, and the reinforced coupling structure is located between the metalized frequency modulation hole and the metalized through hole.
Further, the reinforced coupling structure includes a metallized blind via.
Further, the distance between the metallized blind hole and the metallized through hole is 2-3 mm.
Further, the number of the metallized blind holes is one.
Furthermore, the number of the metallized blind holes is multiple, the metallized blind holes are arranged at intervals along a linear direction, and the linear direction is vertical to the connecting line direction between the metallized frequency modulation holes and the metallized through holes.
Furthermore, the number of the metallized blind holes is multiple, the metallized blind holes are arranged at intervals along an arc line direction, and the arc line direction is perpendicular to a connecting line direction between the metallized frequency modulation hole and the metallized through hole and surrounds the metallized through hole.
Further, the number of the metallized blind holes is two, three, four or five.
Further, the difference between the height of the medium single cavity and the depth of the metallized blind hole is larger than 2 mm.
The second aspect of the invention provides a dielectric waveguide duplexer, which comprises a TX tap cavity, an RX tap cavity and a dielectric waveguide port coupling structure, wherein the dielectric waveguide port coupling structure comprises a dielectric single cavity, the dielectric single cavity is provided with a metalized through hole penetrating through the upper surface and the lower surface of the dielectric single cavity, the metalized through hole is close to one side of the dielectric single cavity, and the metalized through hole is used for connecting an input/output device to realize port output signals; a reinforced coupling structure for reinforcing the coupling strength of the port is arranged on the upper surface or the lower surface of the medium single cavity at a position close to the metalized through hole; the medium single cavity is connected with the TX tap cavity and the RX tap cavity through a first coupling window and a second coupling window respectively.
The invention can strengthen the coupling strength of the port by the arranged reinforced coupling structure, can realize stronger port coupling when being applied to the filter, thereby meeting the input and output of the port of the filter with stronger port coupling requirement, such as a broadband dielectric waveguide filter, a dielectric waveguide duplexer, a multiplexer, a combiner and the like, and the generated resonance is far away from the passband of the filter by the arranged metallized through holes, has less influence on the passband and can improve the performance of the filter.
[ description of the drawings ]
Fig. 1 is a schematic perspective view of a dielectric waveguide port coupling structure according to an embodiment of the present invention;
FIG. 2 is a schematic top view of the dielectric waveguide port coupling structure shown in FIG. 1;
fig. 3 is a schematic perspective view of a dielectric waveguide duplexer provided based on the dielectric waveguide port coupling structure shown in fig. 1;
fig. 4 is a schematic diagram illustrating port delay simulation of the dielectric waveguide duplexer shown in fig. 3.
[ detailed description ] embodiments
The invention is further described below with reference to the figures and examples.
Referring to fig. 1 and 2, the present invention provides a dielectric waveguide port coupling structure, which can be applied to a dielectric waveguide filter, a dielectric waveguide duplexer, a multiplexer, a combiner, etc. The dielectric waveguide port coupling structure includes a dielectric single cavity 10. The dielectric single cavity 10 is made of a solid dielectric material such as ceramic. The surface of the medium single cavity 10 is metallized. When the dielectric waveguide port coupling structure of the present invention is applied to a dielectric waveguide filter, the dielectric single cavity 10 may be a tapped cavity. When the dielectric waveguide port coupling structure of the present invention is applied to a dielectric waveguide duplexer, a multiplexer, a combiner, etc., the dielectric single cavity 10 may be a common cavity. The dielectric single cavity 10 is provided with a metallized through hole 20 penetrating the upper and lower surfaces thereof. The metallized through hole 20 is close to one side of the medium single cavity 10. The metalized through holes 20 are used for connecting the input/output device 30 to realize port input/output signals, the metalized through holes 20 are generally connected with the input/output device 30 by soldering, the input/output device 30 is generally a PIN of a connector, and the connector is used as a port of a filter at this time, or is directly connected to a PIN of a metal on a PCB, and the PIN of the metal is used as a port of the filter at this time. The lower surface of the dielectric single cavity 10 is provided with a reinforced coupling structure 40 for reinforcing the port coupling strength at a position close to the metalized through hole 20. It is understood that the reinforced coupling structure 40 may also be disposed on the upper surface of the single dielectric chamber 10, and the reinforced coupling structure 40 is disposed on the upper surface or the lower surface of the single dielectric chamber 10, and may be disposed according to practical situations.
According to the invention, through the arrangement of the metalized through holes 20, when the metalized through holes 20 are actually applied to a filter, the resonance generated by the metalized through holes 20 is far away from the passband of the filter, so that the influence on the passband is small, and the performance of the filter can be improved; the enhanced coupling structure 40 can enhance the coupling strength of the port, so that stronger port coupling can be realized, and the input and output of the port of the filter with stronger port coupling requirements, such as a broadband dielectric waveguide filter, a dielectric waveguide duplexer, a multiplexer, a combiner, and the like, can be met.
A metallized frequency modulation hole 11 is arranged at the central position of the lower surface of the medium single cavity 10. The metallized frequency modulation hole 11 is in the form of a metallized blind hole and is used for adjusting the resonant frequency of the dielectric single cavity 10. In this embodiment, the connection line between the metallized tuning hole 11 and the metallized through hole 20 is parallel to or may intersect with the length direction of the dielectric single cavity 10. A reinforced coupling structure 40 is located between metallized tuned hole 11 and metallized via 20. It is understood that the metallized tuning hole 11 may be arranged according to actual situations, for example, the metallized tuning hole 11 may not be arranged, or a part of the metal layer may be removed from the center of the surface of the dielectric single cavity 10 to adjust the resonant frequency of the dielectric single cavity 10. It is understood that the metallized fm holes 11 may also be disposed on the upper surface of the dielectric single cavity 10. The metallized tuning holes 11 and the reinforced coupling structures 40 may be disposed on the same surface of the dielectric single cavity 10, as shown in fig. 1, or may be disposed on different surfaces.
In this embodiment, the reinforced coupling structure 40 includes a blind metalized via 41. The distance between the metallized blind hole 41 and the metallized through hole 20 is preferably 2-3 mm, so that the influence on the resonant frequency of the dielectric single cavity 10 can be reduced, the dielectric single cavity 10 can be conveniently molded, and the port coupling strength can be improved. The difference between the height of the single medium cavity 10 and the depth of the metallized blind hole 41 is larger than 2 mm, so that the single medium cavity 10 can be conveniently machined and molded. Generally, the deeper the depth of the blind metallized via 41, the stronger the coupling strength of the port, and thus the coupling strength of the port can be adjusted by adjusting the depth of the blind metallized via 41.
The number of the plated blind holes 41 is multiple, the plated blind holes 41 are arranged at intervals along an arc line direction, and the plated blind holes 41 are arranged at intervals, so that the machining and the forming of the medium single cavity 10 are facilitated. The direction of the circular arc is perpendicular to the direction of the connection line between the metallized tuning hole 11 and the metallized through hole 20 and surrounds the metallized through hole 20. It will be appreciated that the direction of the circular arc may also be at an angle to the direction of the line between the metallized tuning holes 11 and the metallized through holes 20. In the present embodiment, the number of the blind metallized vias 41 is three.
In an alternative, the plurality of blind metallized vias 41 are spaced along a line perpendicular to or at an angle to the line connecting the fm metallized vias 11 and the through metallized vias 20.
It is understood that the plurality of blind metallized vias 41 may be arranged in other ways, such as spaced along a curved line. The arrangement of the plurality of metallized blind holes 41 can be set according to practical situations.
In other embodiments, the number of the blind metallized vias 41 may be one, and fig. 1 shows that the one blind metallized via 41 is located on the line between the fm metallized via 11 and the through metallized via 20. It is understood that the one metallized via hole 41 may be formed without a line between the metallized tuning hole 11 and the metallized via hole 20.
It will be appreciated that the number of blind metallized vias 41 may also be, for example, two, four, five, etc. or more. The number of the metallized blind holes 41 can be set according to the actual size of the dielectric single cavity 10.
Generally, the greater the number of blind metallized vias 41, the stronger the coupling strength of the port, and therefore the number of blind metallized vias 41 can be set according to the actual coupling strength requirements of the port.
Referring to fig. 3, the present invention provides a dielectric waveguide duplexer based on the above dielectric waveguide port coupling structure, which includes a TX (Transmitter) tap cavity 101, an RX (Receiver) tap cavity 102, and the above dielectric waveguide port coupling structure. The dielectric single cavity 10 of the dielectric waveguide port coupling structure is used as a common cavity. The dielectric single cavity 10 of the dielectric waveguide port coupling structure is connected with the TX tap cavity 101 and the RX tap cavity 102 through a first coupling window 103 and a second coupling window 104, respectively, and energy coupling is realized through the first coupling window 103 and the second coupling window 104, respectively, so as to realize transmission of radio frequency signals. The TX tap cavity 101 plays a role of transmitting TX radio frequency signals, the RX tap cavity 102 plays a role of transmitting RX radio frequency signals, the TX radio frequency signals and the RX radio frequency signals can be combined through the dielectric single cavity 10, and the combined signals can be output to an antenna through the input/output device 30 connected with the metalized through hole 20 of the dielectric single cavity 10. Through the dielectric waveguide port coupling structure, the port coupling strength is strong, no obvious mutual interference exists between the TX tap cavity 101 and the RX tap cavity 102, the strong port coupling requirement of the dielectric waveguide duplexer can be met, the influence of resonance generated by the metalized through holes 20 to the passband of the dielectric waveguide duplexer is small, and the performance of the dielectric waveguide duplexer is improved.
The surfaces of the TX tap cavity 101 and the RX tap cavity 102 are metallized, and metallized tuning holes 105 and 106 can be arranged on the upper surface or the lower surface of the TX tap cavity 101 and the RX tap cavity 102 according to actual needs to adjust the respective resonant frequencies.
The simulation result of the port delay of the dielectric waveguide duplexer of the invention is shown in fig. 4, and it can be seen from the curve in fig. 4 that, by the above-mentioned dielectric waveguide port coupling structure, the coupling of the port is stronger, no obvious mutual interference exists between the TX tap cavity 101 and the RX tap cavity 102, and the performance is good.
When the dielectric waveguide port coupling structure is applied to other filters with strong requirements on the coupling strength of ports, such as a broadband dielectric waveguide filter, a multiplexer, a combiner and the like, the same effect as that of the dielectric waveguide duplexer can be achieved.
The above examples merely represent preferred embodiments of the present invention, which are described in more detail and detail, but are not to be construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications, such as combinations of different features in various embodiments, may be made without departing from the spirit of the invention, and these are within the scope of the invention.
Claims (7)
1. A dielectric waveguide port coupling structure, comprising a dielectric single cavity, characterized in that: the medium single cavity is provided with a metalized through hole penetrating through the upper surface and the lower surface of the medium single cavity, the metalized through hole is close to one side of the medium single cavity, and the metalized through hole is used for connecting an input/output device to realize port input/output signals; a reinforced coupling structure for reinforcing the coupling strength of the port is arranged on the upper surface or the lower surface of the medium single cavity at a position close to the metalized through hole; a metalized frequency modulation hole is formed in the center of the upper surface or the lower surface of the medium single cavity, and the reinforced coupling structure is located between the metalized frequency modulation hole and the metalized through hole; the reinforced coupling structure comprises a metallized blind hole; the number of the metallized blind holes is multiple, and the metallized blind holes are arranged at intervals along a straight line direction or arranged at intervals along an arc line direction.
2. A dielectric waveguide port coupling structure as claimed in claim 1 wherein: the distance between the metallized blind hole and the metallized through hole is 2-3 mm.
3. A dielectric waveguide port coupling structure as claimed in claim 1 wherein: the plurality of metallized blind holes are arranged at intervals along a linear direction, and the linear direction is vertical to the connecting line direction between the metallized frequency modulation holes and the metallized through holes.
4. A dielectric waveguide port coupling structure as claimed in claim 1 wherein: the plurality of metallized blind holes are arranged at intervals along an arc line direction, and the arc line direction is perpendicular to the connecting line direction between the metallized frequency modulation holes and the metallized through holes and surrounds the metallized through holes.
5. A dielectric waveguide port coupling structure according to claim 3 or 4, wherein: the number of the metallized blind holes is two, three, four or five.
6. A dielectric waveguide port coupling structure as claimed in claim 1 wherein: the difference between the height of the medium single cavity and the depth of the metallized blind hole is larger than 2 mm.
7. A dielectric waveguide duplexer comprises a TX tap cavity, an RX tap cavity and a dielectric waveguide port coupling structure, wherein the dielectric waveguide port coupling structure comprises a dielectric single cavity, and is characterized in that: the medium single cavity is provided with a metalized through hole penetrating through the upper surface and the lower surface of the medium single cavity, the metalized through hole is close to one side of the medium single cavity, and the metalized through hole is used for connecting an input/output device to realize port output signals; a reinforced coupling structure for reinforcing the coupling strength of the port is arranged on the upper surface or the lower surface of the medium single cavity at a position close to the metalized through hole; a metalized frequency modulation hole is formed in the center of the upper surface or the lower surface of the medium single cavity, and the reinforced coupling structure is located between the metalized frequency modulation hole and the metalized through hole; the reinforced coupling structure comprises a metallized blind hole; the number of the metallized blind holes is multiple, and the metallized blind holes are arranged at intervals along a straight line direction or arranged at intervals along an arc line direction; the medium single cavity is connected with the TX tap cavity and the RX tap cavity through a first coupling window and a second coupling window respectively.
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| CN202010064765.7A CN111261984B (en) | 2020-01-20 | 2020-01-20 | Dielectric waveguide port coupling structure and dielectric waveguide duplexer |
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| CN202010064765.7A CN111261984B (en) | 2020-01-20 | 2020-01-20 | Dielectric waveguide port coupling structure and dielectric waveguide duplexer |
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| CN111261984B true CN111261984B (en) | 2021-03-12 |
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| CN113258230B (en) * | 2020-06-24 | 2022-04-01 | 中兴通讯股份有限公司 | Dielectric filter combining unit and dielectric multiplexer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000114807A (en) * | 1998-09-30 | 2000-04-21 | Murata Mfg Co Ltd | Filter device, duplexer and communication equipment device |
| CN201549572U (en) * | 2009-11-26 | 2010-08-11 | 苏州艾福电子通讯有限公司 | Medium filter and duplexer with notch pattern |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3498649B2 (en) * | 1998-11-13 | 2004-02-16 | 株式会社村田製作所 | Dielectric filter, duplexer and communication device |
| JP2000165104A (en) * | 1998-11-25 | 2000-06-16 | Murata Mfg Co Ltd | Dielectric filter, duplexer and communication device |
| JP4438253B2 (en) * | 2001-06-12 | 2010-03-24 | 株式会社村田製作所 | Bandpass filter characteristics adjustment method |
| CN209843913U (en) * | 2019-07-15 | 2019-12-24 | 薛冰 | Novel wireless communication medium filter |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000114807A (en) * | 1998-09-30 | 2000-04-21 | Murata Mfg Co Ltd | Filter device, duplexer and communication equipment device |
| CN201549572U (en) * | 2009-11-26 | 2010-08-11 | 苏州艾福电子通讯有限公司 | Medium filter and duplexer with notch pattern |
Non-Patent Citations (1)
| Title |
|---|
| "级联双模谐振腔的波导滤波器仿真设计";巩飞等;《功能材料与器件学报》;20190228(第1期);第26-30页 * |
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