CN106329039A - LC high-pass filter based on through-silicon-via array - Google Patents
LC high-pass filter based on through-silicon-via array Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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Abstract
The invention discloses an LC high-pass filter based on a through-silicon-via array. The LC high-pass filter comprises two coupling inductors and two coupling inductors, wherein a distributed circuit network which the capacitors and the inductors are arranged in a staggered way is formed in a three-dimensional direction, and the inductors are connected with the ground. The LC high-pass filter has the advantages that the effective inductors and the effective capacitors of the high-pass filter are all arranged in vertical directions of metal posts, the occupied chip area is very small, thus, the LC high-pass filter has the remarkable advantages of compact structure, high integration, low cost and the like, signal frequency selection can be achieved, and the LC high-pass filter is flexible in design.
Description
Technical field
The present invention relates to a kind of wave filter, be specifically related to a kind of LC high pass filter based on silicon via-hole array, belong to face
To the passive device field of RF/Microwave Application of integrated circuit.
Background technology
Wave filter, as the lossless two-port network device of a class, is widely used in microwave communication, electronic countermeasure, microwave
Measure and in radar, the quality of its performance often directly influences the quality of whole communication system.In in the past few decades,
Along with various new materials, constantly giving of new technique propose and ripe, wave filter have also been obtained significant progress.Along with from high power
Capacity, the metal waveguide of high quality factor, to the microstrip line of Planar integration, in microwave technology industry experiencings one by one
Journey upright stone tablet.
At present, metal waveguide the most no longer adapts to the requirement that society microwave is integrated, micro-strip electricity due to bulky
Lu Yiqi volume is little, low cost, the feature such as be easily integrated, and gains great popularity in integrated process of today, but microstrip circuit
The open architecture of self limits its quality factor and power capacity.Substrate integration wave-guide is a kind of realization on dielectric substrate
Wave filter, its performance is similar to rectangular waveguide, but belongs to planar circuit, has quality factor high, and power capacity is big, it is easy to add
Work, it is easy to the feature such as integrated.But being in addition to outside the through hole on substrate, all elements of substrate integration wave-guide are all distributed in substrate table
Face, is easily subject to the interference of periphery electromagnetic environment；And its component size is all a millimeter rank, although much smaller than metal waveguide,
But still can not be compatible with common CMOS integrated circuit.
Silicon through hole (TSV) is a kind of three dimensional structure penetrating silicon substrate, can be effectively improved integrated level and the circuit of circuit
The quality of system and performance, Technology is the most ripe, and design and manufacture for silica-based integrated high-pass filter provide newly
Method.
Summary of the invention
It is an object of the invention to provide a kind of based on silicon via-hole array, have that compact conformation, integrated level be high, area
The LC high pass filter of the advantages such as little, working band width.
In order to realize above-mentioned target, the present invention adopts the following technical scheme that:
A kind of LC high pass filter based on silicon via-hole array, including: top layer, intermediate layer and bottom, it is characterised in that
Aforementioned intermediate layer is semiconductor substrate layer (201), uses silicon materials to make, it is etched with through upper and lower surface
Silicon through hole, aforementioned silicon through hole is by 4 row, the array structure arrangement of 5 row, and in the array, column pitch is equal to the diameter of silicon through hole, the
1 row and the 2nd line space, the 3rd row and the 4th line space in the ranks in the ranks is equal to the diameter of silicon through hole, and the 2nd row and the 3rd is in the ranks
Line space, equal to 2 times of silicon through-hole diameter, is filled with the metal column (203) contour with silicon through hole, aforementioned gold in aforementioned silicon through hole
Belong to and be also filled with insulating barrier (202) between post (203) and the inwall of silicon through hole；
Aforementioned top layer is top layer dielectric layer (101), adopts and is made from an insulative material, and is provided with top-level metallic interconnection line
(102), top layer the first metal polar plate (103), top layer the second metal polar plate (104) and top-level metallic ground pole plate (105), wherein,
Aforementioned top-level metallic interconnection line (102) is made up of 8 sections of metal wires, and every section of metal wire connects the top of two adjacent metal posts (203)
End, the metal column (203) forming top annexation is respectively as follows: the 1st row the 2nd row and the 1st row the 3rd row, and the 1st row the 4th row are with the 1st
Row the 5th arranges, the 2nd row the 5th row and the 3rd row the 4th row, the 2nd row the 4th row and the 3rd row the 3rd row, the 2nd row the 3rd row and the 3rd row the 2nd row,
2nd row the 2nd row and the 3rd row the 1st row, the 4th row the 1st row and the 4th row the 2nd row, the 4th row the 3rd row and the 4th row the 4th row；Aforementioned top layer
First metal polar plate (103) is connected between in layer on the metal column (203) of the 2nd row the 1st row, as LC high-pass filtering of the present invention
The input pole plate of device；Aforementioned top layer the second metal polar plate (104) is connected between the metal column (203) of the 3rd row the 5th row in layer
On, as the output pole plate of LC high pass filter of the present invention；Aforementioned top-level metallic ground pole plate (105) is by two sections of separate metallic plates
Constituting, first paragraph metallic plate connects the 1st row the 1st row metal column (203), as the ground connection pole plate of LC high pass filter of the present invention,
Second segment metallic plate connects the 4th row the 5th row metal column (203), as the ground connection pole plate of LC high pass filter of the present invention；
Aforementioned bottom is underlying dielectric layer (301), adopts and is made from an insulative material, and is provided with underlying metal interconnection line
(302), aforementioned underlying metal interconnection line (302) is made up of 10 sections of separate metal wires, and every section of metal wire connects two adjacent gold
Belonging to the bottom of post (203), the metal column (203) forming bottom annexation is respectively as follows: the 1st row the 1st row and the 1st row the 2nd row, the
1 row the 3rd row and the 1st row the 4th row, the 1st row the 5th row and the 2nd row the 5th row, the 2nd row the 4th row and the 3rd row the 5th row, the 2nd row the 3rd row
With the 3rd row the 4th row, the 2nd row the 2nd row and the 3rd row the 3rd row, the 2nd row the 1st row and the 3rd row the 2nd row, the 3rd row the 1st row and the 4th row
1st row, the 4th row the 2nd row and the 4th row the 3rd row, the 4th row the 4th row and the 4th row the 5th row；
Aforementioned top layer, intermediate layer and bottom are sequentially overlapped after forming a whole, top-level metallic interconnection line (102), centre
Layer the 2nd row and the 3rd row metal post (203) and underlying metal interconnection line (302) are collectively forming a nesting in perpendicular
Double helix, this structure constitute distributed electric capacity, an inductance network；Top-level metallic interconnection line (102), intermediate layer
1st row metal post (203) and underlying metal interconnection line (302) form a distributed in three dimensions formula inducer in perpendicular,
And it is connected to top-level metallic ground pole plate (105), as the ground connection pole plate of LC high pass filter of the present invention；Top-level metallic interconnection line
(102), intermediate layer the 1st row metal post (203) and intermediate layer the 2nd row metal post (203) form a distributed coupling electricity
Container；Top-level metallic interconnection line (102), intermediate layer the 4th row metal post (203) and underlying metal interconnection line (302) are vertically
Form a distributed in three dimensions formula inducer in plane, and be connected to top-level metallic ground pole plate (105), as the LC high pass of the present invention
The ground connection pole plate of wave filter；Top-level metallic interconnection line (102), intermediate layer the 3rd row metal post (203) and intermediate layer the 4th row gold
Belong to post (203) and form a distributed coupling capacitor；Top layer, intermediate layer and bottom form a distribution on three-dimensional
Formula, capacitor and inducer cross arrangement circuit network, and inducer is connected to ground.
Aforesaid LC high pass filter based on silicon via-hole array, it is characterised in that make aforementioned top layer dielectric layer
(101), the insulant that insulating barrier (202) and underlying dielectric layer (301) use is silicon dioxide, silicon nitride or silicon oxynitride.
Aforesaid LC high pass filter based on silicon via-hole array, it is characterised in that make aforementioned metal post (203) and use
Material be copper or aluminum.
Aforesaid LC high pass filter based on silicon via-hole array, it is characterised in that make aforementioned top-level metallic interconnection line
(102), top layer the first metal polar plate (103), top layer the second metal polar plate (104) and top-level metallic ground pole plate (105) use
Material is copper or aluminum.
The invention have benefit that:
(1) coupling inductor
The LC high pass filter based on silicon via-hole array of the present invention, its inducer all adjacent by silicon via-hole array
Metal column coupling is formed, and is specifically related to 2 kinds of coupled-inductor structure, and one is top-level metallic interconnection line, intermediate layer the 2nd row and the 3rd
Row metal post and underlying metal interconnection line are collectively forming a nested double helix in perpendicular, in this structure
Comprise a distributed inductor network；Two is that top-level metallic interconnection line, intermediate layer the 1st row metal post and underlying metal are mutual
Line forms a distributed in three dimensions formula inducer in perpendicular, and similar, top-level metallic interconnection line, intermediate layer the 4th
Row metal post and the 3rd row metal post form a distributed coupling inductor；These 2 kinds of inducers all take full advantage of metal
Coupling inductance between post, defines stronger near-field coupling, and metal column utilization rate is high, therefore has that integrated level is high, area is little
Etc. advantage；
(2) coupling capacitor
The LC high pass filter based on silicon via-hole array of the present invention, its capacitor all adjacent by silicon via-hole array
Metal column coupling is formed, and is specifically related to 2 kinds of coupling capacitor structure, and one is top-level metallic interconnection line, intermediate layer the 2nd row and the 3rd
Row metal post and underlying metal interconnection line are collectively forming a nested double helix in perpendicular, in this structure
Comprise a distributed capacitor network；Two is top-level metallic interconnection line, intermediate layer the 1st row metal post and the 2nd row metal
Post forms a distributed coupling capacitor, and similar, top-level metallic interconnection line, intermediate layer the 3rd row metal post and
4th row metal post forms a distributed coupling capacitor；These 2 kinds of capacitors use adjacent metal posts as two pole plates,
Form the distributed couplings electric capacity of matrix structure, therefore there is the advantages such as integrated level is high, area is little；
(3) high pass filter
The LC high pass filter based on silicon via-hole array of the present invention, it is by above-mentioned 2 kinds of coupling inductors and above-mentioned 2 kinds of couplings
Conjunction capacitor is constituted, and forms distributed a, capacitor and the circuit network of inducer cross arrangement on three-dimensional, its
Middle inducer be connected to ground, this circuit network constitutes the high pass filter of the present invention, the effective inductance of this high pass filter and
Effective capacitance is all distributed in the vertical direction of metal column, and the chip area occupied is the least, therefore has compact conformation, integrated level
The remarkable advantages such as height, low cost；
Because distributed capacitor is serially connected between input pole plate and output pole plate, the most all distributed inductor are all
Having a pole plate ground connection, this circuit network is under high frequency condition, it is allowed to signal is transferred to outfan from input, similar short circuit electricity
Road；And at low frequency condition, signal is shorted to ground, it is impossible to be transferred to outfan from input, similar open-circuit, it is achieved that
The selection of signal frequency；
Because the main element constituting this high pass filter is coupling inductor and coupling capacitor, the inductance of each element
Value and capacitance be all by silicon through hole between spacing determine；Meanwhile, above-mentioned coupling inductor and coupling capacitor quantity by
The line number of silicon via-hole array and columns determine, by the simple spacing changed between silicon through hole and the line number of silicon via-hole array and
Columns, the high pass filter of i.e. available different cut-off frequencies, therefore, the LC high-pass filtering based on silicon via-hole array of the present invention
The advantage that utensil has flexible design.
Accompanying drawing explanation
Fig. 1 is the front view of the top layer of the LC high pass filter of the present invention；
Fig. 2 is the front view in the intermediate layer of the LC high pass filter of the present invention；
Fig. 3 is the front view of the bottom of the LC high pass filter of the present invention；
Fig. 4 is the perspective view after top layer, intermediate layer and bottom superposition；
Fig. 5 is the A-A ' profile of the LC high pass filter in Fig. 4；
Fig. 6 is the B-B ' profile of the LC high pass filter in Fig. 4；
Fig. 7 is the equivalent-circuit model schematic diagram of the LC high pass filter of the present invention.
The implication of reference in figure: 101-top layer dielectric layer, 102-top-level metallic interconnection line, 103-top layer the first metal
Pole plate, 104-top layer the second metal polar plate, 105-top-level metallic ground pole plate, 201-semiconductor substrate layer, 202-insulating barrier, 203-
Metal column, 301-underlying dielectric layer, 302-underlying metal interconnection line.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention made concrete introduction.
One, the structure of the LC high pass filter realized based on silicon via-hole array
The LC high pass filter based on silicon via-hole array of the present invention includes: top layer, intermediate layer and bottom.
1, intermediate layer
Intermediate layer is semiconductor substrate layer, uses silicon materials to make, with reference to Fig. 2, semiconductor substrate layer 201 is etched with and passes through
The silicon through hole of logical upper and lower surface, all silicon through holes are by 4 row, the array structure arrangement of 5 row, and in the array, column pitch is equal to silicon
The diameter of through hole, the 1st row and the 2nd line space, the 3rd row and the 4th line space in the ranks in the ranks equal to the diameter of silicon through hole, the 2nd
Row is equal to 2 times of silicon through-hole diameter with the 3rd line space in the ranks.
It is filled with the metal column 203 contour with silicon through hole in silicon through hole, also fills out between the inwall of metal column 203 and silicon through hole
It is filled with insulating barrier 202.
The insulant making insulating barrier 202 use is silicon dioxide, silicon nitride or silicon oxynitride.
The material making metal column 203 use is copper or aluminum.
2, top layer
Top layer is top layer dielectric layer, adopts and is made from an insulative material, and with reference to Fig. 1, top layer dielectric layer 101 is provided with top layer gold
Belong to interconnection line 102, top layer the first metal polar plate 103, top layer the second metal polar plate 104 and top-level metallic ground pole plate 105.
Top-level metallic interconnection line 102 is made up of 8 sections of metal wires, and every section of metal wire connects the top of two adjacent metal posts 203
End, the metal column 203 forming top annexation is respectively as follows: the 1st row the 2nd row and the 1st row the 3rd row, the 1st row the 4th row and the 1st row
5th row, the 2nd row the 5th row and the 3rd row the 4th row, the 2nd row the 4th row and the 3rd row the 3rd row, the 2nd row the 3rd row and the 3rd row the 2nd row, the
2 row the 2nd row and the 3rd row the 1st row, the 4th row the 1st row and the 4th row the 2nd row, the 4th row the 3rd row and the 4th row the 4th row.
Top layer the first metal polar plate 103 is connected between in layer on the metal column 203 of the 2nd row the 1st row, as LC of the present invention
The input pole plate of high pass filter.
Top layer the second metal polar plate 104 is connected between in layer on the metal column 203 of the 3rd row the 5th row, as LC of the present invention
The output pole plate of high pass filter.
Top-level metallic ground pole plate 105 is made up of two sections of separate metallic plates, and first paragraph metallic plate connects the 1st row the 1st row gold
Belonging to post 203, as the ground connection pole plate of LC high pass filter of the present invention, second segment metallic plate connects the 4th row the 5th row metal column 203,
Ground connection pole plate as LC high pass filter of the present invention.
The insulant making top layer dielectric layer 101 use is silicon dioxide, silicon nitride or silicon oxynitride.
Make top-level metallic interconnection line 102, top layer the first metal polar plate 103, top layer the second metal polar plate 104 and top layer gold
The material that possession pole plate 105 uses is copper or aluminum.
3, bottom
Bottom is underlying dielectric layer, adopts and is made from an insulative material, and with reference to Fig. 3, underlying dielectric layer 301 is provided with bottom gold
Belonging to interconnection line 302, underlying metal interconnection line 302 is made up of 10 sections of separate metal wires, and every section of metal wire connects two adjacent gold
Belonging to the bottom of post 203, the metal column 203 forming bottom annexation is respectively as follows: the 1st row the 1st row and the 1st row the 2nd row, the 1st row
3rd row with the 1st row the 4th row, the 1st row the 5th row with the 2nd row the 5th row, the 2nd row the 4th row with the 3rd row the 5th row, the 2nd row the 3rd row with
3rd row the 4th row, the 2nd row the 2nd row and the 3rd row the 3rd row, the 2nd row the 1st row and the 3rd row the 2nd row, the 3rd row the 1st row and the 4th row the 1st
Row, the 4th row the 2nd row and the 4th row the 3rd row, the 4th row the 4th row and the 4th row the 5th row.
The insulant making underlying dielectric layer 301 use is silicon dioxide, silicon nitride or silicon oxynitride.
With reference to Fig. 4, Fig. 5 and Fig. 6, top layer, intermediate layer and bottom are sequentially overlapped after forming a whole:
Top-level metallic interconnection line 102, intermediate layer the 2nd row and the 3rd row metal post 203 and underlying metal interconnection line 302 exist
Being collectively forming a nested double helix in perpendicular, this structure constitutes distributed electric capacity, an inductance network；
Top-level metallic interconnection line 102, intermediate layer the 1st row metal post 203 and underlying metal interconnection line 302 are at perpendicular
One distributed in three dimensions formula inducer of interior formation, and it is connected to top-level metallic ground pole plate 105, as LC high pass filter of the present invention
Ground connection pole plate；
Top-level metallic interconnection line 102, intermediate layer the 1st row metal post 203 and intermediate layer the 2nd row metal post 203 form one
Individual distributed coupling capacitor；
Top-level metallic interconnection line 102, intermediate layer the 4th row metal post 203 and underlying metal interconnection line 302 are at perpendicular
One distributed in three dimensions formula inducer of interior formation, and it is connected to top-level metallic ground pole plate 105, as the LC high pass filter of the present invention
Ground connection pole plate；
Top-level metallic interconnection line 102, intermediate layer the 3rd row metal post 203 and intermediate layer the 4th row metal post 203 form one
Individual distributed coupling capacitor；
Top layer, intermediate layer and bottom form distributed a, capacitor and inducer cross arrangement on three-dimensional
Circuit network, and inducer is connected to ground.
Fig. 7 is the equivalent-circuit model schematic diagram of the LC high pass filter based on silicon via-hole array of the present invention.This equivalence
The structure of circuit is as follows:
From top layer the first metal polar plate 103 to top layer the second metal polar plate 104, several the capacitor of having connected,
Connect the top crown of a coupling inductor in the two ends of each capacitor, the bottom crown of all coupling capacitors all connects
On top-level metallic ground pole plate 105.
As can be seen here, the equivalent circuit of the LC high pass filter of the present invention is 9 rank LC collection general constructions, and therefore it has very well
Frequency selectivity, in-band insertion loss can be effectively reduced simultaneously, increase Out-of-band rejection.
Become it should be noted that above-described embodiment limits the present invention, all employing equivalents or equivalence the most in any form
The technical scheme that the mode changed is obtained, all falls within protection scope of the present invention.
Claims (4)
1. a LC high pass filter based on silicon via-hole array, including: top layer, intermediate layer and bottom, it is characterised in that
Described intermediate layer is semiconductor substrate layer (201), uses silicon materials to make, and the silicon that it is etched with through upper and lower surface leads to
Hole, described silicon through hole is by 4 row, the array structure arrangement of 5 row, and in the array, column pitch is equal to the diameter of silicon through hole, the 1st row
With the diameter that the 2nd line space, the 3rd row and the 4th line space in the ranks in the ranks is equal to silicon through hole, the 2nd row and the 3rd is the most in the ranks
Away from equal to 2 times of silicon through-hole diameter, in described silicon through hole, it is filled with the metal column (203) contour with silicon through hole, described metal column
And between the inwall of silicon through hole, be also filled with insulating barrier (202) (203)；
Described top layer is top layer dielectric layer (101), adopts and is made from an insulative material, be provided with top-level metallic interconnection line (102),
Top layer the first metal polar plate (103), top layer the second metal polar plate (104) and top-level metallic ground pole plate (105), wherein, described top
Layer metal interconnecting wires (102) is made up of 8 sections of metal wires, and every section of metal wire connects the top of two adjacent metal posts (203), is formed
The metal column (203) of top annexation is respectively as follows: the 1st row the 2nd row and the 1st row the 3rd row, the 1st row the 4th row and the 1st row the 5th
Row, the 2nd row the 5th row and the 3rd row the 4th row, the 2nd row the 4th row and the 3rd row the 3rd row, the 2nd row the 3rd row and the 3rd row the 2nd row, the 2nd row
2nd row and the 3rd row the 1st row, the 4th row the 1st row and the 4th row the 2nd row, the 4th row the 3rd row and the 4th row the 4th row；Described top layer first
Metal polar plate (103) is connected between in layer on the metal column (203) of the 2nd row the 1st row, as LC high pass filter of the present invention
Input pole plate；Described top layer the second metal polar plate (104) is connected between in layer on the metal column (203) of the 3rd row the 5th row, work
Output pole plate for LC high pass filter of the present invention；Described top-level metallic ground pole plate (105) is made up of two sections of separate metallic plates,
First paragraph metallic plate connects the 1st row the 1st row metal column (203), as the ground connection pole plate of LC high pass filter of the present invention, second segment
Metallic plate connects the 4th row the 5th row metal column (203), as the ground connection pole plate of LC high pass filter of the present invention；
Described bottom is underlying dielectric layer (301), adopts and is made from an insulative material, and is provided with underlying metal interconnection line (302),
Described underlying metal interconnection line (302) is made up of 10 sections of separate metal wires, and every section of metal wire connects two adjacent metal posts
(203) bottom, the metal column (203) forming bottom annexation is respectively as follows: the 1st row the 1st row and the 1st row the 2nd row, the 1st row
3rd row with the 1st row the 4th row, the 1st row the 5th row with the 2nd row the 5th row, the 2nd row the 4th row with the 3rd row the 5th row, the 2nd row the 3rd row with
3rd row the 4th row, the 2nd row the 2nd row and the 3rd row the 3rd row, the 2nd row the 1st row and the 3rd row the 2nd row, the 3rd row the 1st row and the 4th row the 1st
Row, the 4th row the 2nd row and the 4th row the 3rd row, the 4th row the 4th row and the 4th row the 5th row；
Described top layer, intermediate layer and bottom are sequentially overlapped after forming a whole, top-level metallic interconnection line (102), intermediate layer the 2nd
Row is collectively forming nested double spiral shells with the 3rd row metal post (203) and underlying metal interconnection line (302) in perpendicular
Rotation shape structure, this structure constitutes distributed electric capacity, an inductance network；Top-level metallic interconnection line (102), intermediate layer the 1st row
Metal column (203) and underlying metal interconnection line (302) form a distributed in three dimensions formula inducer in perpendicular, and connect
To top-level metallic ground pole plate (105), as the ground connection pole plate of LC high pass filter of the present invention；Top-level metallic interconnection line (102), in
Interbed the 1st row metal post (203) and intermediate layer the 2nd row metal post (203) form a distributed coupling capacitor；Top layer
Metal interconnecting wires (102), intermediate layer the 4th row metal post (203) and underlying metal interconnection line (302) are formed in perpendicular
One distributed in three dimensions formula inducer, and it is connected to top-level metallic ground pole plate (105), as the connecing of LC high pass filter of the present invention
Ground pole plate；Top-level metallic interconnection line (102), intermediate layer the 3rd row metal post (203) and intermediate layer the 4th row metal post (203) shape
Become a distributed coupling capacitor；Top layer, intermediate layer and bottom form distributed a, capacitor on three-dimensional
With the circuit network of inducer cross arrangement, and inducer is connected to ground.
LC high pass filter based on silicon via-hole array the most according to claim 1, it is characterised in that make described top layer
The insulant that dielectric layer (101), insulating barrier (202) and underlying dielectric layer (301) use is silicon dioxide, silicon nitride or nitrogen oxygen
SiClx.
LC high pass filter based on silicon via-hole array the most according to claim 1, it is characterised in that make described metal
The material that post (203) uses is copper or aluminum.
LC high pass filter based on silicon via-hole array the most according to claim 3, it is characterised in that make described top layer
Metal interconnecting wires (102), top layer the first metal polar plate (103), top layer the second metal polar plate (104) and top-level metallic ground pole plate
(105) material used is copper or aluminum.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107819182A (en) * | 2017-11-17 | 2018-03-20 | 杭州电子科技大学 | A kind of novel passive resonator with solenoid type silicon hole inductance |
| CN111817677A (en) * | 2020-06-18 | 2020-10-23 | 复旦大学 | High-pass filter based on three-dimensional capacitance and inductance and preparation method |
| CN114142192A (en) * | 2021-12-02 | 2022-03-04 | 昆山鸿永微波科技有限公司 | Low-loss silicon-based filter and manufacturing method thereof |
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