CN113809499A - Lumped parameter branch line directional coupler based on TSV structure - Google Patents
Lumped parameter branch line directional coupler based on TSV structure Download PDFInfo
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- 239000003990 capacitor Substances 0.000 claims abstract description 65
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 24
- 239000010949 copper Substances 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 241000724291 Tobacco streak virus Species 0.000 claims description 33
- 238000004804 winding Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 abstract description 12
- 238000007254 oxidation reaction Methods 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 101150043218 RDL6 gene Proteins 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
Abstract
The invention discloses a lumped parameter branch line directional coupler based on a TSV structure, which comprises an upper oxidation layer and a lower oxidation layer which are arranged in parallel along the horizontal direction, wherein a silicon-based substrate is arranged between the upper oxidation layer and the lower oxidation layer, four groups of TSV inductors are respectively arranged in the silicon-based substrate, and every two of the four groups of TSV inductors are symmetrically arranged; and the connecting position of each two groups of TSV inductors is connected with one polar plate of one interdigital capacitor, and the other polar plates of the four interdigital capacitors are connected with the metal copper grounding plate. The problem that the area of a traditional branch line directional coupler is large in a low-frequency band is solved.
Description
Technical Field
The invention belongs to the technical field of three-dimensional integrated circuits, and relates to a lumped parameter branch line directional coupler based on a TSV structure.
Background
The development of communication technology now makes the demand of mobile communication devices rise rapidly. Under the trend that the current communication equipment is pursuing light weight and miniaturization, the miniaturization of the microwave passive device has a very wide market prospect. The passive device is an essential important part in a radio frequency wireless system, the passive device usually occupies most of the total devices of the system, so that the occupied space is large, the miniaturization of the passive device is limited by a series of development bottlenecks of materials, processes and the like, the miniaturization of the passive device is hindered, and the miniaturization of the whole radio frequency system is further hindered.
The directional coupler is a passive microwave device capable of realizing directional coupling in a microwave system, plays a very important role in the construction of the microwave system, and is used for distribution or combination of power in radio frequency circuit design. The directional coupler is a four-port device, has the characteristics of lossless reciprocity and matching of four ports, and is mainly used for measuring three parameters of isolation, coupling and directivity. The directional coupler has wide application range and a plurality of varieties, but in some occasions, the requirements on various performances of the directional coupler are very strict. The manufacture of critical equipment such as radar systems, microwave feeders, power meters, etc. tends to be miniaturized, placing higher demands on the spatial dimensions of the directional coupler. The traditional branch line directional coupler is mainly designed by adopting distribution parameters, however, the size of components in a radio frequency system is larger along with the lower frequency, and the size is different from the miniaturization required at present. Therefore, the lumped parameter model can be adopted to design the low-frequency branch line directional coupler to reduce the size of the relevant components.
The development of integrated circuits is brought into a three-dimensional era by the appearance of the TSV (through silicon via) technology, which has the characteristics of miniaturization, integration, good reliability and the like. Currently, the TSV technology has become a trend in the communication system technology, and the miniaturization and integration of the rf system are greatly promoted. Today, it is applied not only to three-dimensional integrated circuits, but also to the design and fabrication of passive devices. The TSV technology is applied to the design of the directional coupler, so that the size can be further reduced and the miniaturization can be realized.
Disclosure of Invention
The invention aims to provide a TSV structure-based lumped parameter branch line directional coupler, which adopts a pi-type transmission line equivalent lumped parameter structure and solves the problem that the traditional branch line directional coupler is large in area in a low frequency band.
The technical scheme adopted by the invention is that the lumped parameter branch line directional coupler based on the TSV structure comprises an upper oxidation layer and a lower oxidation layer which are arranged in parallel along the horizontal direction, a silicon-based substrate is arranged between the upper oxidation layer and the lower oxidation layer, four groups of TSV inductors are respectively arranged in the silicon-based substrate, and the four groups of TSV inductors are symmetrically arranged in pairs; and the connecting position of each two groups of TSV inductors is connected with one polar plate of one interdigital capacitor, and the other polar plates of the four interdigital capacitors are connected with the metal copper grounding plate.
The invention is also characterized in that:
the four groups of TSV inductors are respectively as follows: TSV inductor L1TSV inductor L2TSV inductor L3And TSV inductor L4(ii) a TSV inductor L1TSV inductor L2TSV inductor L3And TSV inductor L4Are sequentially arranged along the clockwise direction; TSV inductor L1And TSV inductor L3Symmetrically arranging; TSV inductor L2And TSV inductor L4Are symmetrically arranged.
TSV inductor L1TSV inductor L2TSV inductor L3And TSV inductor L4The winding mode is the same, all include: the upper ends of the two rows of TSVs are spirally wound and connected through an upper RDL; the lower ends of the two rows of TSV are spirally wound and connected through the lower layer RDL.
TSV inductor L1And TSV inductor L3The number of TSV in the structure is the same; TSV inductor L2And TSV inductor L4The number of TSVs in (1) is the same.
Four interdigital capacitors are a double-layer interdigital capacitor structure consisting of two layers of RDLs, and the four interdigital capacitors are respectively: capacitor C1Capacitor C2Capacitor C3Capacitor C4Capacitor C1Inductor L positioned in TSV1And TSV inductor L4On the connecting line of (2); capacitor C2Inductor L positioned in TSV2And TSV inductor L1On the connecting line of (2); capacitor C3Inductor L positioned in TSV2And TSV inductor L3On the connecting line between; capacitor C4Inductor L positioned in TSV3And TSV inductor L4On the connecting line of (2).
The invention has the following beneficial effects:
1. the invention obtains the lumped parameter circuit of the branch line directional coupler by carrying out pi-type equivalence on the lambda/4 branch transmission line of the branch line directional coupler, and the inductor and the capacitor in the circuit are realized by adopting a TSV structure, are compatible with silicon process products and can be integrated.
2. Inductor L1、L2、L3、L4And the three-dimensional structure is based on TSV, and compared with the traditional two-dimensional planar spiral inductor, the three-dimensional planar spiral inductor has the advantages of small occupied chip area and low loss.
3. The capacitor adopts a double-layer interdigital structure, and compared with the traditional interdigital capacitor, the capacitor density is improved, and the area is correspondingly reduced.
4. And through utilizing the excellent electrical characteristics of TSV, better performance is achieved, compared with the traditional branch line directional coupler, the branch line directional coupler has the advantages of being small in size, low in loss and the like, and the lumped parameter branch line directional coupler with good isolation and return loss in a low frequency band is achieved.
Drawings
FIG. 1 is a schematic circuit diagram of a lumped parameter branch line coupler based on a TSV structure of the present invention;
FIG. 2 is a perspective view of a lumped parameter branch line coupler based on a TSV structure of the present invention;
FIG. 3 is a full cross-sectional view of a lumped parameter stub coupler according to the invention based on a TSV structure;
FIG. 4 is a simulation graph of S-parameters of a TSV structure based lumped parameter branch line coupler in HFSS (high frequency structure simulation) according to the present invention;
fig. 5 is a phase difference graph of port P2 and port P3 in HFSS of the lumped parameter branch line coupler based on TSV structure of the present invention.
1. The capacitor comprises a silicon-based substrate, 2 parts of an upper oxidation layer, 3 parts of a lower oxidation layer, 4 parts of a TSV inductor, 5 parts of a TSV, 6 parts of an upper RDL, 7 parts of a lower RDL, 8 parts of a silicon dioxide oxidation layer, 9 parts of a copper column, 10 parts of a metal copper block I, 11 parts of an RDL connecting plate, 12 parts of metal copper blocks II and 13 parts of an interdigital capacitor, and 14 parts of a metal copper block III and 15 parts of a metal copper grounding plate.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention discloses a lumped parameter branch line coupler based on a TSV structure, which adopts pi-type transmission line equivalence, and respectively equates four lambda/4 branch lines of a traditional microstrip branch line directional coupler into four pi-type inductance-capacitance networks by utilizing a transmission line equivalence principle, thereby obtaining a circuit schematic diagram of lumped parameters of the branch line directional coupler. Calculating the inductance value and the capacitance value in the lumped parameter branch line bridge according to the electrical length and the characteristic impedance of the four branches, wherein the inductance values of the upper branch line and the lower branch line are equal and symmetrical; the values of the left and right branch line inductances are equal and symmetrical. The values of the upper branch line capacitance, the lower branch line capacitance, the left branch line capacitance, the right branch line capacitance and the left branch line capacitance are equal and are symmetrical up and down and left and right. On the basis, the capacitance of two adjacent branch lines is calculated in parallel to simplify the circuit, the numerical value of each passive device is obtained, and finally the equivalent circuit consisting of four pi-shaped circuits is obtained. The circuit schematic of the lumped parameter branch line directional coupler is shown in fig. 1 (P in fig. 1)1～P4Four ports), the inductor in the equivalent circuit adopts a TSV structure, and the capacitor adopts an RDL interdigital capacitor structure.
As shown in fig. 2, the lumped parameter branch line directional coupler based on the TSV structure includes an upper oxide layer 2 and a lower oxide layer 3 arranged in parallel along a horizontal direction, and a silicon-based substrate 1 is disposed between the upper oxide layer 2 and the lower oxide layer 3; the upper oxide layer 2 and the lower oxide layer 3 are made of silicon dioxide materials.
Four groups of TSV inductors 4 are respectively arranged in the silicon-based substrate 1, and the four groups of TSV inductors 4 are TSV inductors L respectively1TSV inductor L2TSV inductor L3And TSV inductor L4；
TSV inductor L1And TSV inductor L3Symmetrically arranging; TSV inductor L2And TSV inductor L4Symmetrically arranging;
TSV inductor L1TSV inductor L2TSV inductor L3And TSV inductor L4The winding mode is the same, all include: two rows of TSVs 5 are arranged in parallel along the vertical direction, and the upper ends of the two rows of TSVs 5 are spirally wound and connected through an upper layer of RDL 6; the lower ends of the two rows of TSVs 5 are spirally wound and connected through a lower layer RDL 7.
TSV inductor L1And TSV inductor L3The number of TSV5 is the same; TSV inductor L2And TSV inductor L4Have the same number of TSVs 5. Number of TSVs 5 and TSV inductors L1TSV inductor L2TSV inductor L3And TSV inductor L4The magnitude of the inductance value of (c).
As shown in fig. 3, each TSV5 has a hollow cylindrical silicon dioxide oxide layer 8, and a copper pillar 9 is coaxially sleeved in the silicon dioxide oxide layer 8;
in one TSV inductor 4, the upper ends of each copper pillar 9 in each TSV5 are spirally connected together through an upper layer RDL 6; the lower ends of each copper pillar 9 in each TSV5 are spirally connected together through a lower layer RDL 7;
the lower layer of RDL7 is positioned in the lower oxide layer 3, and the upper layer of RDL6 is positioned in the upper layer of RDL 6;
the upper parts of four corresponding upper layers of RDLs 6 in the four TSV inductors 4 are respectively connected with the RDL connecting plate 11 through metal copper blocks I10; the RDL connecting plate 11 is of a square frame structure and is simultaneously connected with the TSV inductor L1TSV inductor L2TSV inductor L3And TSV inductor L4The upper layer RDL6 in the middle layer is connected through a metal copper block I10;
the RDL connecting plate 11 is respectively connected with four interdigital capacitors 13 through a metal copper block II 12;
four interdigital capacitors 13 are a double-layer interdigital capacitor structure composed of two layers of RDLs, and the four interdigital capacitors 13 are respectively: capacitor C1Capacitor C2Capacitor C3Capacitor C4Capacitor C1Inductor L positioned in TSV1And TSV inductor L4On the connecting line of (2); capacitor C2Inductor L positioned in TSV2And TSV inductor L1On the connecting line of (2); capacitor C3Inductor L positioned in TSV2And TSV inductor L3On the connecting line between; capacitor C4Inductor L positioned in TSV3And TSV inductor L4On the connecting line of (2).
The four interdigital capacitors 13 are respectively connected with the metal copper grounding plate 15 through the metal copper block III 14.
Wherein TSV inductor L1And L3The diameter of The (TSV) copper pillar 9 is 20 μm and the height is 200 μm; the thickness of the silicon dioxide oxidation layer 8 on the outer layer of the copper column 9 is 0.3 mu m; the lower layer RDL7 is 195 μm long and 20 μm wide; the upper layer RDL6 is 200 μm long and 20 μm wide; the thicknesses of the upper layer RDL6 and the lower layer RDL7 are both 5 micrometers, and the upper layer RDL6 and the lower layer RDL7 are connected through copper columns 9 respectively; the copper columns 9 used for connection have a diameter of 10 μm and a height of 12 μm; finally forming a spiral structure (TSV inductor L) with 4 turns1And L3Both of which are spiral structures with 4 turns).
TSV inductor L2And L4The diameter of The (TSV) copper column 9 is 20 μm, the height is 200 μm, and the thickness of the silicon dioxide insulating layer 8 outside the copper column 9 is 0.3 μm; the lower layer RDL7 is 270 mu m long and 20 mu m wide, the upper layer RDL6 is 275 mu m long and 20 mu m wide, the thicknesses of the upper layer RDL6 and the lower layer RDL7 are both 5 mu m, the diameter of the copper column 9 is 10 mu m, and the height is 12 mu m; forming a 7-turn spiral structure (TSV inductor L)2And L4Both of which are helical structures with 7 turns).
Capacitor C1Capacitor C2Capacitor C3Capacitor C4Adopts a double-layer interdigital structure and a capacitor C1Capacitor C2Capacitor C3Capacitor C4Are all buried in the upper oxide layer 2, and the capacitor C1、C2、C3、C4Are equal in value, so that the structure and the size are identical, and the capacitance C is1Capacitor C2Capacitor C3Capacitor C4The structure of (2) is formed by connecting two layers of RDLs through copper columns, the upper layer of RDLs and the lower layer of RDLs are overlapped to increase the overlapping area so as to increase the capacitance value, wherein the length of each interdigital is 260 mu m, the width of each interdigital is 5 mu m, the distance between the interdigital is 3 mu m, the thickness of each interdigital is 5 mu m, the distance between the interdigital is 3 mu m, and the length of the RDL for connecting the interdigital is 224 mu m and the width of the RDL for connecting the interdigital is 20 mu m.
The invention discloses a TSV structure-based lumped parameter branch line coupler, which has the following connection relation:
the TSV inductors L are sequentially connected in sequence by using the RDL as a connecting line1TSV inductor L2TSV inductor L3TSV inductor L4The connecting line is arranged on the upper layer of the TSV inductor, different layers are connected through the metal columns to form a complete loop, the four capacitors are symmetrically arranged on the upper layers of the four TSV inductors and the connecting line thereof, and the capacitor C1One pole plate of the inductor is connected with the inductor L through a metal column1And L4On the connecting line of (C) corresponding to2One pole plate of is connected with the inductor L1And L2On the connecting line of C3Is connected to L3And L2On the connecting line of C4Is connected to L4And L3The other polar plates of the four capacitors are all grounded on the connecting wire, thereby completing the connection of the whole circuit.
The lumped parameter branch line coupler based on the TSV structure adopts the silicon-based substrate and is compatible with the existing common silicon process product. The equivalent lumped parameter structure of the pi-shaped transmission line is adopted, the problem that the traditional branch line directional coupler is large in area in a low frequency band is solved, the size of the inductor and the capacitor is greatly reduced by applying the TSV technology, and the miniaturization requirement of the qualitative coupler is further met.
FIG. 4 is a simulation graph of S-parameters of a TSV structure based lumped parameter branch line coupler in HFSS (high frequency structure simulation) according to the present invention;
FIG. 5 is a phase difference graph of a lumped parameter branch line coupler based on TSV structure in HFSS (high frequency structure simulation) according to the present invention;
as can be seen from the analysis of FIG. 4, the lumped parameter branch line coupler based on TSV has the return loss larger than 17.3dB, the isolation larger than 10dB and the insertion loss smaller than 1.95dB within 2.0-2.6 GHz; at 2.1-2.4 GHz, the return loss is larger than 19dB, the isolation is larger than 20dB, and the insertion loss is smaller than 1.53 dB. The isolation can reach 57.62dB at most, and the minimum insertion loss is only 1.40 dB. Fig. 5 shows the phase difference between the port P2 and the port P3.
Claims (5)
1. A lumped parameter branch line directional coupler based on a TSV structure is characterized in that: the silicon-based TSV inductors are arranged in the silicon-based substrate respectively, and the four groups of TSV inductors are arranged in a pairwise symmetry mode; and the connecting position of each two groups of TSV inductors is connected with one polar plate of one interdigital capacitor, and the other polar plates of the four interdigital capacitors are connected with the metal copper grounding plate.
2. The lumped parameter branch line directional coupler based on the TSV structure of claim 1, wherein: the four groups of TSV inductors are respectively as follows: TSV inductor L1TSV inductor L2TSV inductor L3And TSV inductor L4(ii) a TSV inductor L1TSV inductor L2TSV inductor L3And TSV inductor L4Are sequentially arranged along the clockwise direction; TSV inductor L1And TSV inductor L3Symmetrically arranging; TSV inductor L2And TSV inductor L4Are symmetrically arranged.
3. The lumped parameter branch line directional coupler based on the TSV structure of claim 2, wherein: the TSV inductor L1TSV inductor L2TSV inductor L3And TSV inductor L4The winding mode is the same, all include: the upper ends of the two rows of TSVs are spirally wound and connected through an upper RDL; the lower ends of the two rows of TSV are spirally wound and connected through the lower layer RDL.
4. The lumped parameter branch line directional coupler based on TSV structure of claim 3, wherein: the TSV inductor L1And TSV inductor L3The number of TSV in the structure is the same; TSV inductor L2And TSV inductor L4The number of TSVs in (1) is the same.
5. The lumped parameter branch line directional coupler based on the TSV structure of claim 1, wherein: the four intersectionsThe finger capacitors are double-layer interdigital capacitor structures formed by two layers of RDLs, and the four interdigital capacitors are respectively: capacitor C1Capacitor C2Capacitor C3Capacitor C4Capacitor C1Inductor L positioned in TSV1And TSV inductor L4On the connecting line of (2); capacitor C2Inductor L positioned in TSV2And TSV inductor L1On the connecting line of (2); capacitor C3Inductor L positioned in TSV2And TSV inductor L3On the connecting line between; capacitor C4Inductor L positioned in TSV3And TSV inductor L4On the connecting line of (2).
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116111970A (en) * | 2023-03-28 | 2023-05-12 | 南通大学 | Eight-port 3dB coupler based on lumped elements |
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Application publication date: 20211217 |