CN106099280A - A kind of LC band filter based on the coupling electric capacity distribution of silicon through hole - Google Patents
A kind of LC band filter based on the coupling electric capacity distribution of silicon through hole Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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Abstract
The invention discloses a kind of LC band filter based on the coupling electric capacity distribution of silicon through hole, it forms the circuit network of a distributed capacitor and inducer cross arrangement on three-dimensional, from input to outfan path, the element of series connection is respectively LCL structure, wherein, the two ends at each inducer respectively connected a coupling capacitor；In this LCL circuit, low frequency and high-frequency input signal outside passband will be conducting to ground, be similar to open circuit, and the only signal in band connection frequency just can be transmitted directly to outfan, it is achieved thereby that the selection of signal frequency；Total is only made up of 4 sections of top-level metallic interconnection lines and 12 metal columns, has the advantages such as area compact, integrated level is high, production cost is low；Inducer and the distribution formula coupling inductance value of capacitor and capacitance be all by silicon through hole between spacing determine, the advantage that therefore the LC band filter of the present invention has flexible design.
Description
Technical field
The present invention relates to a kind of LC band filter, be specifically related to a kind of LC band based on the coupling electric capacity distribution of silicon through hole logical
Wave filter, belongs to the passive device field towards RF/Microwave Application of integrated circuit.
Background technology
Along with microwave, the fast development of millimeter-wave technology, microwave filter oneself through become Films In Passive Microwave Devices leading role it
One, for separating or the important devices of combination different frequency transmission signal in microwave system.Along with the integrated electricity of monolithic microwave
Road technique and the development of Mcm Technique, types of applications electronic building brick in armament systems is constantly to miniaturization, Gao Xing
Energy, low-power consumption, low cost direction are developed.But, in terms of the miniaturization of microwave filter, there is also a lot of problem, especially
The miniaturization of LC wave filter is own through becoming a bottleneck of microwave circuit miniaturization.
Silicon through hole (TSV) is a kind of three dimensional structure penetrating silicon substrate, can be effectively improved integrated level and the circuit of circuit
The quality of system and performance, Technology is the most ripe, and design and manufacture for silica-based integrated filter provide new side
Method.
Summary of the invention
It is an object of the invention to provide a kind of based on the coupling electric capacity distribution of silicon through hole, there is compact conformation, convenient with
The LC band filter of the advantages such as traditional cmos integrated circuit single-chip integration, area are little.
In order to realize above-mentioned target, the present invention adopts the following technical scheme that:
A kind of LC band filter based on the coupling electric capacity distribution of silicon through hole, including: top layer and bottom, it is characterised in that
Aforementioned bottom is semiconductor substrate layer (201), uses silicon materials to make, it is etched with the 4 through upper and lower surfaces of row
Silicon through hole, wherein, the 1st row and the 4th row silicon through hole be respectively arranged with 2 row, be arranged in respectively left side and horizontal center position, right side, in the ranks
Away from the diameter equal to silicon through hole；2nd row and the 3rd row silicon through hole are arranged in center, in this battle array by 2 row, the array structure of 4 row
In row, row, column spacing is equal to the diameter of silicon through hole；The metal column (203) contour with silicon through hole it is filled with in aforementioned silicon through hole,
Insulating barrier (202) it is also filled with between aforementioned metal post (203) and the inwall of silicon through hole；
Aforementioned top layer is top layer dielectric layer (101), adopts and is made from an insulative material, and is provided with some top-level metallics mutual
Line (102) and 12 pieces of metallic plates, aforementioned 12 pieces of metallic plates are the length of side square-shaped metal plate equal to silicon through-hole diameter, these
Square-shaped metal plate covers on the top of 6 pairs of metal columns (203), and wherein, being positioned at the 1st metallic plate arranging the 1st row is top layer first
Metal polar plate (103), aforementioned top layer the first metal polar plate (103) is the input pole plate of LC band filter of the present invention, and it passes through
Top-level metallic interconnection line (102) is connected with being positioned at the 2nd metallic plate arranging the 2nd row and the 3rd row, aforementioned top-level metallic interconnection line
(102) it is arranged in the way of S-shaped；Being positioned at the 4th metallic plate arranging the 2nd row is top layer the second metal polar plate (104), aforementioned top
Layer the second metal polar plate (104) is the output pole plate of LC band filter of the present invention, its by top-level metallic interconnection line (102) with
Being positioned at the 3rd metallic plate arranging the 2nd row and the 3rd row to connect, aforementioned top-level metallic interconnection line (102) is arranged in the way of S-shaped；
Being positioned at the 1st metallic plate arranging the 2nd row is top-level metallic ground pole plate (105), and it passes through top-level metallic interconnection line (102) and position
Arranging the 4th row and the 3rd in the 2nd and arrange the metallic plate connection of the 4th row, aforementioned top-level metallic interconnection line (102) is carried out in the way of straight
Arrange；Being positioned at the 4th metallic plate arranging the 1st row is another top-level metallic ground pole plate (105), and it passes through top-level metallic interconnection line
(102) be positioned at the 2nd and arrange the 1st row and the 3rd metallic plate arranging the 1st row is connected, aforementioned top-level metallic interconnection line (102) is with straight
Mode is arranged；
After top layer and bottom are sequentially overlapped composition entirety, bottom the 1st row metal column (203) forms one in perpendicular
Coupling capacitor, top layer the first metal polar plate (103) is a pole plate of this coupling capacitor, is also that LC of the present invention band is logical simultaneously
The input pole plate of wave filter, corresponding another pole plate that top-level metallic ground pole plate (105) is this coupling capacitor；Bottom the 4th
Row metal column (203) forms another coupling capacitor in perpendicular, and top layer the second metal polar plate (104) is this coupling electricity
One pole plate of container, is also the output pole plate of LC band filter of the present invention simultaneously, corresponding top-level metallic ground pole plate (105)
Another pole plate for this coupling capacitor；The metal column (203) of the 2nd row and the 3rd row is collectively forming the coupling of a distribution formula
Capacitor array, this coupling capacitor array can be distributed into 3 sub-electric capacity, the top crown of first sub-electric capacity for the 2nd arrange the 2nd row and
The top-level metallic interconnection line (102) that 3rd row metal plate connects, bottom crown ground connection, the top crown of second sub-electric capacity is and the 3rd row
The top-level metallic interconnection line (102) that 2nd row and the 3rd row metal plate connect, bottom crown ground connection, the top crown of the 3rd sub-electric capacity is
Arranging the 2nd row with the 2nd and top-level metallic interconnection line (102) that the 3rd row metal plate is connected, bottom crown is for arrange the 2nd row and the 3rd with the 3rd
The top-level metallic interconnection line (102) that row metal plate connects；Connect and the 1st arrange the 1st row, the 2nd arrange the 2nd row and the 2nd and arrange the 3rd row metal plate
Top-level metallic interconnection line (102) in top-most-surface plane, form an inducer；Connect and the 4th arrange the 2nd row, the 3rd arrange the 2nd row and
The 3 top-level metallic interconnection lines (102) arranging the 3rd row metal plate form another inducer in top-most-surface plane；Top layer and bottom exist
Distributed a, capacitor and the circuit network of inducer cross arrangement is formed, from input to outfan on three-dimensional
On path, the element of series connection is respectively LCL structure, and wherein the two ends at each inducer respectively connected a coupling capacitor,
The equal ground connection of bottom crown of these 4 coupling capacitors.
Aforesaid LC band filter based on the coupling electric capacity distribution of silicon through hole, it is characterised in that make aforementioned top layer and be situated between
The insulant that matter layer (101) and insulating barrier (202) use is silicon dioxide layer silicon nitride layer silicon oxynitride.
Aforesaid LC band filter based on the coupling electric capacity distribution of silicon through hole, it is characterised in that make aforementioned metal post
(203) material used is copper or aluminum.
Aforesaid LC band filter based on the coupling electric capacity distribution of silicon through hole, it is characterised in that make aforementioned top layer gold
Belong to interconnection line (102), top layer the first metal polar plate (103), top layer the second metal polar plate (104) and top-level metallic ground pole plate
(105) material used is copper or aluminum.
The invention have benefit that:
(1) coupling electric capacity
Bottom the 1st row metal column forms a coupling capacitor in perpendicular, and bottom the 4th row metal column is the most flat
Another coupling capacitor is formed in face；
Above-mentioned 2 coupling capacitor main bodies are all produced in semiconductor substrate layer (silicon materials), are positioned at input/output pole plate
With the underface of metal ground pole plate, be equivalent to not consume any chip area, of the present invention LC band filter can be greatly reduced
Cost of manufacture.
(2) distribution formula coupling electric capacity
The metal column of the 2nd row and the 3rd row is collectively forming the coupling capacitor array of a distribution formula in perpendicular, due to
2nd arrange the 1st row and the 4th row, the 3rd metallic plate arranging the 1st row and the 4th row is all connected with top-level metallic ground pole plate, and the 2nd arranges the 2nd
The metallic plate of row and the 3rd row is all connected with the top-level metallic interconnection line in left side, and the 3rd arranges the metallic plate of the 2nd row and the 3rd row all with right
The top-level metallic interconnection line of side connects, so this coupling capacitor array can be distributed into 3 sub-electric capacity, and the upper pole of first sub-electric capacity
Plate is to arrange the 2nd row with the 2nd and top-level metallic interconnection line that the 3rd row metal plate is connected, bottom crown ground connection, second sub-electric capacity upper
Pole plate is to arrange the 2nd row with the 3rd and top-level metallic interconnection line that the 3rd row metal plate is connected, bottom crown ground connection, the 3rd sub-electric capacity
Top crown is to arrange the 2nd row with the 2nd and top-level metallic interconnection line that the 3rd row metal plate is connected, bottom crown for the 3rd arrange the 2nd row and
The top-level metallic interconnection line that 3rd row metal plate connects；
The metal column (totally 8) of above-mentioned 2nd row and the 3rd row defines 3 sub-electric capacity by the way of coupling electric capacity distribution,
And the sub-electric capacity of these three forms π font annexation；This electric capacity method of salary distribution area compact, simple in construction, easy to make, and only
Need to simply change the spacing between metal column and can change the capacitance allocation proportion of 3 sub-electric capacity, the most also have and well set
Meter motility.
(3) inducer
Connect and the 1st arrange the 1st row, the 2nd arrange the 2nd row and the 2nd and arrange the top-level metallic interconnection line of the 3rd row metal plate at top-most-surface plane
One inducer of interior formation；Connect and the 4th arrange the 2nd row, the 3rd arrange the 2nd row and the 3rd and arrange the top-level metallic interconnection line of the 3rd row metal plate
Another inducer is formed in top-most-surface plane；
Above-mentioned two inducer uses the connecting line between capacitor plate to be formed, can be mutual by simple change top-level metallic
The length of line and winding turns can obtain different inductance value, and novel structure, area compact, flexible design are convenient, especially
It is suitable for high-frequency band filter application.
(4) LC band filter
Above-mentioned top layer and bottom form on three-dimensional that one distributed, capacitor (C) and inducer (L) intersect row
The circuit network of cloth, from input to outfan path, the element of series connection is respectively LCL structure, wherein at each inducer
(L) two ends respectively connected a coupling capacitor, the equal ground connection of bottom crown of these 4 coupling capacitors；At this LCL circuit
In, low frequency and high-frequency input signal outside passband will be conducting to ground, be similar to open circuit, the only ability of the signal in band connection frequency
It is transmitted directly to outfan, it is achieved thereby that the selection of signal frequency；
Whole LC bandpass filter structures is only made up of 4 sections of top-level metallic interconnection lines and 12 metal columns, and defining 5 has
Effect coupling capacitor and 2 inducers, therefore have the advantages such as area compact, integrated level is high, production cost is low；
The inducer constituting the LC band filter of the present invention and the inductance value distributing formula coupling capacitor and capacitance are all
Be by silicon through hole between spacing determine, the advantage that therefore the LC band filter of the present invention has flexible design.
Accompanying drawing explanation
Fig. 1 is the front view of the top layer of the LC band filter of the present invention；
Fig. 2 is the front view of the bottom of the LC band filter of the present invention；
Fig. 3 is the perspective view after top layer and bottom superposition；
Fig. 4 is the A-A ' profile of the LC band filter in Fig. 3；
Fig. 5 is the equivalent-circuit model schematic diagram of the LC band filter of the present invention；
Fig. 6 is the simulation result figure of the LC band filter of the present invention.
The implication of reference in figure: 101-top layer dielectric layer, 102-top-level metallic interconnection line, 103-top layer the first metal
Pole plate, 104-top layer the second metal polar plate, 105-top-level metallic ground pole plate, 201-semiconductor substrate layer, 202-insulating barrier, 203-
Metal column.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention made concrete introduction.
The LC band filter based on the coupling electric capacity distribution of silicon through hole of the present invention includes: top layer and bottom.
1, bottom
Bottom is semiconductor substrate layer, uses silicon materials to make.
With reference to Fig. 2, semiconductor substrate layer 201 is etched with the silicon through hole of the 4 through upper and lower surfaces of row, wherein, the 1st row and the
4 row silicon through holes are respectively arranged with 2 row, are arranged in left side and horizontal center position, right side respectively, and line space is equal to the diameter of silicon through hole；2nd
Row and the 3rd row silicon through hole are arranged in center by 2 row, the array structure of 4 row, and in the array, row, column spacing is equal to silicon
The diameter of through hole.
Additionally, be filled with the metal column 203 contour with silicon through hole in silicon through hole, the inwall of metal column 203 and silicon through hole it
Between be also filled with insulating barrier 202.
The material making metal column 203 use is copper or aluminum.
The insulant making insulating barrier 202 use is silicon dioxide, silicon nitride or silicon oxynitride.
The LC band filter of the present invention can make in common silicon substrate, and the periphery of same substrate is permissible
Place other the most active and passive integrated circuit module, convenient and traditional cmos integrated circuit single-chip integration.
2, top layer
Top layer is top layer dielectric layer, adopts and is made from an insulative material, and the insulant of use is silicon dioxide, silicon nitride or nitrogen
Silicon oxide.
With reference to Fig. 1, top layer dielectric layer 101 is provided with some top-level metallic interconnection lines 102 and 12 pieces of metallic plates, makes
The material that top-level metallic interconnection line 102 and metallic plate use is copper or aluminum.
12 pieces of metallic plates are the length of side square-shaped metal plate equal to silicon through-hole diameter, and these square-shaped metal plates cover
The top of 6 pairs of metal columns 203, wherein:
Being positioned at the 1st metallic plate arranging the 1st row is top layer the first metal polar plate 103, defeated for LC band filter of the present invention
Entering pole plate, it is connected with being positioned at the 2nd metallic plate arranging the 2nd row and the 3rd row by top-level metallic interconnection line 102；
Being positioned at the 4th metallic plate arranging the 2nd row is top layer the second metal polar plate 104, defeated for LC band filter of the present invention
Going out pole plate, it is connected with being positioned at the 3rd metallic plate arranging the 2nd row and the 3rd row by top-level metallic interconnection line 102；
Being positioned at the 1st metallic plate arranging the 2nd row is a top-level metallic ground pole plate 105, and it passes through top-level metallic interconnection line 102
Arranging the 4th row and the 3rd metallic plate arranging the 4th row is connected with being positioned at the 2nd, this top-level metallic interconnection line 102 is carried out in the way of straight
Arrange；
Being positioned at the 4th metallic plate arranging the 1st row is another top-level metallic ground pole plate 105, and it passes through top-level metallic interconnection line
102 be positioned at the 2nd and arrange the 1st row and the 3rd metallic plate arranging the 1st row is connected, this top-level metallic interconnection line 102 enters in the way of straight
Row is arranged.
3, top layer and bottom are sequentially overlapped
After top layer and bottom are sequentially overlapped composition entirety, its minimum area is only 80um × 40um, and mid frequency is 20 Jis
Hertz, design for monolithic integrated microwave circuit and provide new structure and method for designing.
With reference to Fig. 3 and Fig. 4, after top layer and bottom are sequentially overlapped composition entirety:
Bottom the 1st row metal column 203 forms a coupling capacitor, top layer the first metal polar plate 103 in perpendicular
For a pole plate of this coupling capacitor, also it is the input pole plate of LC band filter of the present invention simultaneously, corresponding top-level metallic
Ground pole plate 105 is another pole plate of this coupling capacitor；
Bottom the 4th row metal column 203 forms another coupling capacitor, top layer the second metal polar plate in perpendicular
104 is a pole plate of this coupling capacitor, is also the output pole plate of LC band filter of the present invention simultaneously, corresponding top layer gold
Possession pole plate 105 is another pole plate of this coupling capacitor；
The metal column 203 of the 2nd row and the 3rd row is collectively forming the coupling capacitor array of a distribution formula, this coupling electric capacity battle array
Row can be distributed into 3 sub-electric capacity, and the top crown of first sub-electric capacity is to arrange the 2nd row with the 2nd and top layer that the 3rd row metal plate is connected
Metal interconnecting wires 102, bottom crown ground connection, the top crown of second sub-electric capacity is for arranging the 2nd row with the 3rd and the 3rd row metal plate is connected
Top-level metallic interconnection line 102, bottom crown ground connection, the top crown of the 3rd sub-electric capacity is for arrange the 2nd row and the 3rd row metal with the 2nd
The top-level metallic interconnection line 102 that plate connects, bottom crown is to arrange the 2nd row with the 3rd and top-level metallic that the 3rd row metal plate is connected interconnects
Line 102；
Connect and the 1st arrange the 1st row, the 2nd arrange the 2nd row and the 2nd and arrange the top-level metallic interconnection line 102 of the 3rd row metal plate at top layer
An inducer is formed in plane；
Connect and the 4th arrange the 2nd row, the 3rd arrange the 2nd row and the 3rd and arrange the top-level metallic interconnection line 102 of the 3rd row metal plate at top layer
Another inducer is formed in plane；
Top layer and bottom form distributed a, capacitor and the circuit network of inducer cross arrangement on three-dimensional
Network, from input to outfan path, the element of series connection is respectively LCL structure, and wherein the two ends at each inducer connect respectively
Then a coupling capacitor, the equal ground connection of bottom crown of these 4 coupling capacitors.
4, equivalent circuit
Fig. 5 is the equivalent circuit of the LC band filter based on the coupling electric capacity distribution of silicon through hole of the present invention.
As can be seen from Figure 5: from input to outfan path, the element of series connection is respectively LCL structure, wherein at each electricity
The two ends of sensor (L) respectively connected a coupling capacitor, the equal ground connection of bottom crown of these 4 coupling capacitors.
In the circuit, low frequency and high-frequency input signal outside passband will be conducting to ground, be similar to open circuit, only passband
Signal in frequency just can be transmitted directly to outfan, so the LC band filter of the present invention has good frequency and selects
Property.
5, the performance detection of LC band filter based on the coupling electric capacity distribution of silicon through hole
Fig. 6 is the simulation result figure of the LC band filter of the present invention.
As shown in Figure 6:
(1) this band filter passband central frequency is about 2.3GHz, carries a width of 3.5GHz, and insertion loss is less than 0.5dB；
(2), in stopband, in the range of 0GHz～0.25GHz and 4.55～8GHz, suppression is more than 10dB.
Become it should be noted that above-described embodiment limits the present invention, all employing equivalents or equivalence the most in any form
The technical scheme that the mode changed is obtained, all falls within protection scope of the present invention.
Claims (4)
1. a LC band filter based on the coupling electric capacity distribution of silicon through hole, including: top layer and bottom, it is characterised in that
Described bottom is semiconductor substrate layer (201), uses silicon materials to make, it is etched with the silicon of the 4 through upper and lower surfaces of row
Through hole, wherein, the 1st row and the 4th row silicon through hole are respectively arranged with 2 row, are arranged in left side and horizontal center position, right side, line space etc. respectively
Diameter in silicon through hole；2nd row and the 3rd row silicon through hole are arranged in center, at this array by 2 row, the array structure of 4 row
In, row, column spacing is equal to the diameter of silicon through hole；The metal column (203) contour with silicon through hole, institute it is filled with in described silicon through hole
State and between metal column (203) and the inwall of silicon through hole, be also filled with insulating barrier (202)；
Described top layer is top layer dielectric layer (101), adopts and is made from an insulative material, and is provided with some top-level metallic interconnection lines
(102) and 12 pieces of metallic plates, described 12 pieces of metallic plates are the length of side square-shaped metal plate equal to silicon through-hole diameter, and these are square
Shape metallic plate covers on the top of 6 pairs of metal columns (203), and wherein, being positioned at the 1st metallic plate arranging the 1st row is top layer the first metal
Pole plate (103), described top layer the first metal polar plate (103) is the input pole plate of LC band filter of the present invention, and it passes through top layer
Metal interconnecting wires (102) is connected with being positioned at the 2nd metallic plate arranging the 2nd row and the 3rd row, and described top-level metallic interconnection line (102) is with S
The mode of shape is arranged；Being positioned at the 4th metallic plate arranging the 2nd row is top layer the second metal polar plate (104), described top layer the second gold medal
Belonging to the output pole plate that pole plate (104) is LC band filter of the present invention, it passes through top-level metallic interconnection line (102) and is positioned at the 3rd
The metallic plate arranging the 2nd row and the 3rd row connects, and described top-level metallic interconnection line (102) is arranged in the way of S-shaped；It is positioned at the 1st
The metallic plate arranging the 2nd row is top-level metallic ground pole plate (105), and it is arranged with being positioned at the 2nd by top-level metallic interconnection line (102)
4th row and the 3rd arranges the metallic plate of the 4th row and connects, and described top-level metallic interconnection line (102) is arranged in the way of straight；Position
Being another top-level metallic ground pole plate (105) in the 4th metallic plate arranging the 1st row, it passes through top-level metallic interconnection line (102) and position
Arranging the 1st row and the 3rd in the 2nd and arrange the metallic plate connection of the 1st row, described top-level metallic interconnection line (102) is carried out in the way of straight
Arrange；
After top layer and bottom are sequentially overlapped composition entirety, bottom the 1st row metal column (203) forms a coupling in perpendicular
Capacitor, top layer the first metal polar plate (103) is a pole plate of this coupling capacitor, is also LC bandpass filtering of the present invention simultaneously
The input pole plate of device, corresponding another pole plate that top-level metallic ground pole plate (105) is this coupling capacitor；Bottom the 4th row gold
Belonging to post (203) and form another coupling capacitor in perpendicular, top layer the second metal polar plate (104) is this coupling capacitor
A pole plate, be also simultaneously the output pole plate of LC band filter of the present invention, corresponding top-level metallic ground pole plate (105) was for should
Another pole plate of coupling capacitor；The metal column (203) of the 2nd row and the 3rd row is collectively forming the coupling electric capacity of a distribution formula
Array, this coupling capacitor array can be distributed into 3 sub-electric capacity, and the top crown of first sub-electric capacity is for arrange the 2nd row and the 3rd with the 2nd
The top-level metallic interconnection line (102) that row metal plate connects, bottom crown ground connection, the top crown of second sub-electric capacity is for arrange the 2nd with the 3rd
Row and the 3rd row metal plate connect top-level metallic interconnection line (102), bottom crown ground connection, the top crown of the 3rd sub-electric capacity be with
The 2nd top-level metallic interconnection line (102) arranging the 2nd row and the connection of the 3rd row metal plate, bottom crown is for arrange the 2nd row and the 3rd row with the 3rd
The top-level metallic interconnection line (102) that metallic plate connects；Connect and the 1st arrange the 1st row, the 2nd arrange the 2nd row and the 2nd and arrange the 3rd row metal plate
Top-level metallic interconnection line (102) forms an inducer in top-most-surface plane；Connect and the 4th arrange the 2nd row, the 3rd arrange the 2nd row and the 3rd
The top-level metallic interconnection line (102) arranging the 3rd row metal plate forms another inducer in top-most-surface plane；Top layer and bottom are three
Dimension side is upwardly formed distributed a, capacitor and the circuit network of inducer cross arrangement, leads to from input to outfan
On road, the element of series connection is respectively LCL structure, and wherein the two ends at each inducer respectively connected a coupling capacitor, this
The equal ground connection of bottom crown of 4 coupling capacitors.
LC band filter based on the coupling electric capacity distribution of silicon through hole the most according to claim 1, it is characterised in that make
The insulant that described top layer dielectric layer (101) and insulating barrier (202) use is silicon dioxide, silicon nitride or silicon oxynitride.
LC band filter based on the coupling electric capacity distribution of silicon through hole the most according to claim 1, it is characterised in that make
The material that described metal column (203) uses is copper or aluminum.
LC band filter based on the coupling electric capacity distribution of silicon through hole the most according to claim 3, it is characterised in that make
The material that described top-level metallic interconnection line (102) and metallic plate use is copper or aluminum.
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| CN107634295A (en) * | 2017-09-13 | 2018-01-26 | 郑州云海信息技术有限公司 | A kind of Terahertz cavity band-pass filter based on coaxial TSV |
| CN108259021A (en) * | 2018-01-10 | 2018-07-06 | 广西师范大学 | A kind of CMOS broadbands distribution variable band-pass filter |
| CN109743034A (en) * | 2018-11-16 | 2019-05-10 | 西安电子科技大学 | Low pass filter design method based on through silicon via |
| CN111313134A (en) * | 2020-02-29 | 2020-06-19 | 西安理工大学 | Enhanced coupling type three-dimensional hairpin filter adopting TSV (through silicon via) technology |
| EP3982480A4 (en) * | 2019-06-27 | 2022-05-25 | Huawei Technologies Co., Ltd. | Low-cost filter |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106848509A (en) * | 2017-02-10 | 2017-06-13 | 北京中科飞鸿科技有限公司 | A kind of broadband, squareness factor high, suppression band logical LC wave filters high |
| CN107634295A (en) * | 2017-09-13 | 2018-01-26 | 郑州云海信息技术有限公司 | A kind of Terahertz cavity band-pass filter based on coaxial TSV |
| CN108259021A (en) * | 2018-01-10 | 2018-07-06 | 广西师范大学 | A kind of CMOS broadbands distribution variable band-pass filter |
| CN109743034A (en) * | 2018-11-16 | 2019-05-10 | 西安电子科技大学 | Low pass filter design method based on through silicon via |
| EP3982480A4 (en) * | 2019-06-27 | 2022-05-25 | Huawei Technologies Co., Ltd. | Low-cost filter |
| CN111313134A (en) * | 2020-02-29 | 2020-06-19 | 西安理工大学 | Enhanced coupling type three-dimensional hairpin filter adopting TSV (through silicon via) technology |
| CN111313134B (en) * | 2020-02-29 | 2021-09-10 | 西安理工大学 | Enhanced coupling type three-dimensional hairpin filter adopting TSV (through silicon via) technology |
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