CN104682910A - Mutual inductance coupling filter - Google Patents
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- CN104682910A CN104682910A CN201510104697.1A CN201510104697A CN104682910A CN 104682910 A CN104682910 A CN 104682910A CN 201510104697 A CN201510104697 A CN 201510104697A CN 104682910 A CN104682910 A CN 104682910A
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- 230000008878 coupling Effects 0.000 title claims abstract description 64
- 238000010168 coupling process Methods 0.000 title claims abstract description 64
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 230000001629 suppression Effects 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 17
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 230000010354 integration Effects 0.000 abstract description 3
- 238000004364 calculation method Methods 0.000 abstract description 2
- 238000004088 simulation Methods 0.000 abstract description 2
- 238000013461 design Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000004891 communication Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010835 comparative analysis Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011214 refractory ceramic Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
The invention discloses a mutual inductance coupling filter, wherein a mutual inductance structural unit of the mutual inductance coupling filter is provided with two or more mutually overlapped inductors without short circuit. The filter provided by the invention is based on IPD technology, and realizes a mutual inductance coupling filter with high integration level and good performance through reasonable simulation calculation. The invention adopts high-resistance silicon as a base material, and has better high-frequency characteristic; all process procedures are completed by adopting a semiconductor process, the sizes of each layer of metal and medium can be accurately controlled, and the quality and reliability of products are ensured; the structure that two or more inductors are mutually overlapped without short circuit is realized, larger overlapped coupling is obtained, and the inductors are arranged in a partially overlapped mode to simply obtain a larger mutual inductance value, so that a filter with smaller loss is realized, and the size of the filter is reduced; in addition, a plurality of adjustable transmission zeros can be introduced into the filter based on the mutual inductance structure.
Description
Technical field
The present invention relates to wave filter technology field, relate more specifically to a kind of Mutual Inductance Coupling filter.
Background technology
Along with the fast development of wireless communication technology in recent years, increasing mobile device is provided with the radio communication function such as bluetooth, Wi-Fi.Because mobile device volume is little, lightweight, low in energy consumption, therefore designing a miniaturization, the high-performance band-pass filter utensil being applicable to mobile device has important practical significance.At present, most wireless communication systems such as bluetooth, Wi-Fi is all operated in industry, science and medical treatment (ISM) frequency range.Under this frequency range, traditional lumped wave filter has been difficult to meet performance requirement, and under this frequency range, design surface acoustic wave (SAW) filter, also there is suitable difficulty in ceramic filter.Along with the development of technology, LTCC (Low Temperature Co-fired Ceramic, the LTCC) technology occurred at the end of last century then can address this problem preferably.LTCC technology introduces hierarchy on the basis that original planar circuit designs, and the element in circuit can arrange on different layers.Utilize the coupled relation of circuit element on different layers, to a certain degree can reduce circuit size.In industrial production, LTCC technology is that the metal band made in advance is imbedded medium, sinters, then obtain finished product by a series of process under low temperature (700 DEG C ~ 800 DEG C).At present, the passive module such as many microwave filters based on LTCC technology, Ba Lun realizes production application.But based on the passive module of LTCC due to the restriction of technological parameter, line thickness and thickness are comparatively large, and make the volume ratio of whole module comparatively large, be difficult to the demand realizing miniaturized high integration, and adopt refractory ceramics sintering, when volume production in enormous quantities, cost is high.
Along with the development of system in package, adopt semiconductor technology to receive extensive concern in silica-based or the surperficial new technology realizing passive integration of glass-based, namely on silicon wafer or original sheet glass, realize the passive modules such as inductance, electric capacity, LC filter.Particularly on silicon, the semiconductor technology of wafer scale can be adopted, realize the interconnected of baguette, be easy to integrated with whole system simultaneously, therefore cause adopting silica-base material to get more and more to the demand making passive filter.But due to silica-based characteristic of semiconductor, and the metal laminated restriction on surface, the spiral inductance Q value adopting conventional method to make on silicon is limited, even adopt HR-Si substrate, coil metal thickness is more than 10 μm, and Q value is also difficult to reach more than 50.The method of filter is realized mainly so at present: select a kind of suitable LC filter transfer function, as Chebyshev filter or Butterworth filter on silica-based; Then suitable exponent number is selected according to controlling consumption; Again according to the design parameter of various components and parts in the technical parameter determination filters such as filter center frequency, bandwidth; Then at silicon substrate surface, required passive inductance, electric capacity appropriate design layout electricity are connected, finally adopt a series of semiconductor technologies such as thin film deposition, metal sputtering, plating, photoetching, etching by structure fabrication out.
Use that the passive module reliability of silica-based IPD (Integrated Passive Device) fabrication techniques is high, compact conformation, cost are low, there is larger cost and performance advantage, can be applied to twireless radio-frequency communication system preferably, alternative traditional LTCC technology makes filter to a great extent.But in the realization of some high performance filter, silica-based filter still has short slab.As adopted the filter of inductance coupling structure thus obtaining adequate transmission zero point, LTCC is easy to realize.But on silica-based, even two sections are leaned on very near transmission line or inductance also cannot obtain enough large magnetic Field Coupling amount.
Summary of the invention
Based on above-mentioned technical problem, main inventive object of the present invention is to provide a kind of Mutual Inductance Coupling filter, with based on IPD technology, by rational simulation calculation, realizes the Mutual Inductance Coupling filter that a kind of integrated level is high, performance is good.
To achieve these goals, the invention provides a kind of Mutual Inductance Coupling filter, it is characterized in that, the mutual inductance structure unit of described Mutual Inductance Coupling filter has two or more mutually overlapping but inductance of not short circuit.
Wherein, described Mutual Inductance Coupling filter is produced on silicon, glass or ceramic substrate material.
Wherein, described inductance is made up of two-layer or multiple layer metal.
Wherein, be electrically connected by the mode of metallic vias or directly contact between each metal level of described inductance.
Wherein, also comprise electric capacity in described Mutual Inductance Coupling filter, described electric capacity includes but not limited to the electric capacity of rectangle, circle, polygonal shape, and the electric capacity of unconventional vertical structure.
Wherein, the inductance coupling high part of described mutual inductance structure unit is present between two or more resonant tank.
Wherein, described inductance changes coupling coefficient between inductance by changing the size of overlapping part.
Wherein, described two or more inductance interlocks folded array, thus reduces the size of described Mutual Inductance Coupling filter.
Wherein, in described Mutual Inductance Coupling filter, introduce adjustable transmission zero, thus increase the suppression of filter in characteristic frequency section.
Wherein, described Mutual Inductance Coupling filter is by silica-based IPD fabrication techniques.
Known based on technique scheme, Mutual Inductance Coupling filter of the present invention adopts High Resistivity Si to be base material, has good high frequency characteristics; Adopt semiconductor technology to complete all manufacturing process, accurately can control the size of every layer of metal and medium, ensure the q&r of product; Achieve the structure of two or more inductance overlapping not short circuit again mutually, obtain larger overlapping coupling, adopted by inductance partly overlapping mode layout simply can obtain larger mutual inductance value, thus realize the less filter of loss, reduce the size of filter simultaneously; In addition, multiple adjustable transmission zero can be introduced based on mutual inductance structure in filter.
Accompanying drawing explanation
Fig. 1 is the lumped-circuit structural representation of Mutual Inductance Coupling filter of the present invention;
Fig. 2 is the cross-sectional view of implementation of resistance on silicon chip, electric capacity, inductance;
Fig. 3 is the cross-sectional view of overlapping coupling inductance cabling of the present invention;
About Fig. 4 two figure is the top view without overlapping and that part is overlapping coupling inductance cabling respectively;
Fig. 5 is the top view of the concrete structure of Mutual Inductance Coupling filter of the present invention;
About Fig. 6 two figure is the insertion loss of the filter adopting coupled structure and non-coupled structure respectively, and wherein abscissa is frequency (GHz), and ordinate is attenuation loss (dB).
Description of reference numerals:
101-High Resistivity Si material substrate; 102-silicon dioxide layer; 103-PI layer 1; 104-PI layer 2; 105-resistance material, TaSi; 106-silicon nitride; 107-resistance extraction electrode; 108-capacitance structure bottom crown; 109-capacitance structure top crown; 110-capacitor dielectric layer; TaSi layer on 111-electric capacity bottom crown; 112-electric capacity draws layer; 113-first inductance metal level; 114-inductance metallic vias layer; 115-second inductance metal level; The input port of a 201-inductance; The output port of a 202-inductance; The input port of another inductance of 203-; The output port of another inductance of 204-; The overlapping coupling inductance structure of 301-; 302-capacitance structure.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
The invention discloses a kind of method of Design and implementation high-performance Mutual Inductance Coupling filter on baseplate material, first determine corresponding lumped-circuit according to design objective, these parameter indexs comprise Insertion Loss and attenuation outside a channel etc. in centre frequency, bandwidth, passband.According to the lumped-circuit determined, utilize semiconductor technology, realize corresponding resistance, electric capacity, inductance and mutual inductance structure unit, wherein mutual inductance structure unit achieves the mutually overlapping but structure of not short circuit of two or more inductance, obtain larger overlapping coupling, thus introduce controlled transmission zero.Again each device is built into corresponding filter circuit, and overall field emulation is carried out to the filter construction designed, thus the performance of analysis and Optimal Filter.
Wherein, keyset material includes but not limited to the baseplate materials such as silicon, glass, pottery.
Wherein, passive device includes but not limited to the passive devices such as passive resistance, electric capacity, inductance, mutual inductance structure.
Wherein, induction structure is made up of two-layer or two-layer above metal, and the inductance coupling structure formed can superpose coupling mutually by two or more.
Wherein, capacitance structure includes but not limited to the electric capacity of the shapes such as rectangle, circle, polygon, and the electric capacity of unconventional vertical structure.
Wherein, filter can be filter more than two rank and two rank, and wherein inductance coupling high part can be present between two resonance or multiple resonant tank.
For the substrate of High Resistivity Si material, design thereon and form two rank Mutual Inductance Coupling filters, its typical optimum execution mode is as follows:
Corresponding lumped-circuit is determined according to design objective.For a certain design objective: the scope of passband comprises 2400 ~ 2500MHz.As shown in Figure 1, it is formed in parallel by two groups of lc circuits typical lumped-circuit, and L1, C3 form a lc circuit, and L2, C4 form a lc circuit.
On silicon material substrate, thin-film technique is utilized to make electric capacity, resistance, inductance.Typical resistance, electric capacity and inductance realize technique as shown in Figure 2.Resistance is followed successively by from left to right in figure, the layer structure figure of electric capacity and inductance, wherein resistance is mainly through setting the material of resistance elements 105, length and cross-sectional area etc. are to the resistance providing regulation between resistance extraction electrode 107, electric capacity is by setting capacitance structure bottom crown 108, the material of capacitance structure top crown 109 and capacitor dielectric layer 110, relative area and distance etc. draw the capacitance providing regulation between layer 112 at electric capacity, inductance then adopts common planar spiral inductor, as inventive point place of the present invention, inductance of the present invention is by being positioned at different layers, first inductance metal level 113 of wire character and the second inductance metal level 115 form, between connected by inductance metallic vias layer 114, in addition, also can be electrically connected by directly contacting between two inductance metal levels.
On high resistant silicon based substrate 101, by by mode overlapping for planar spiral inductor part, realize the coupling of inductance.The structure of overlapping coupling inductance as shown in Figure 3.Wherein, induction structure has double layer of metal (113,115) at least, one deck inductance metallic vias layer 114, and in the position that the limit of two inductance is overlapped mutually, upper strata metal is walked on a limit, and lower metal is walked on another limit, thus prevents short circuit between induction structure.By changing the size d2 of overlapping part, the coupling coefficient between inductance can be changed.With compared with overlapping coupling inductance structure, the coupling coefficient of overlapping coupling inductance structure is large very many, thus can reach the size of coupling inductance required in Fig. 1 schematic diagram, and the area of total also reduces greatly.As shown in Figure 4, for ensureing to obtain positive coupling coefficient, the input port of two inductance is respectively (201,203), and output port is respectively (202,204).Left figure does not have overlapping situation, and two inductance separate completely; Right figure is the situation having part overlapping, and wherein two inductance are staggered, and as can be seen from the figure, represents that the lap area of stiffness of coupling is far away more than without overlapping situation, detects its coupling inductance value also much larger than without overlapping situation through reality.
According to lumped-circuit, on silicon material substrate, utilize passive device to build filter, and overall field emulation is carried out to filter construction.As shown in Figure 5, the insertion loss of field emulation as shown in Figure 6 for filter concrete structure.In figure 6, also provide a comparison the insertion loss of the three rank Chebyshev filters not using coupled structure.By comparative analysis, utilize inductance coupling structure, introduce suitable transmission zero, the decay needed for can obtaining in responsive frequency range.And attenuation requirement can be reached with the filter of more low order, thus reduce the loss in passband.Inductance coupling structure filter, owing to have employed the structure of overlapping coupling, can make more compact structure.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a Mutual Inductance Coupling filter, is characterized in that, the mutual inductance structure unit of described Mutual Inductance Coupling filter has two or more mutually overlapping but inductance of not short circuit.
2. Mutual Inductance Coupling filter as claimed in claim 1, wherein said Mutual Inductance Coupling filter is produced on silicon, glass or ceramic substrate material.
3. Mutual Inductance Coupling filter as claimed in claim 1, wherein said inductance is made up of two-layer or multiple layer metal.
4. Mutual Inductance Coupling filter as claimed in claim 3, is electrically connected by the mode of metallic vias or directly contact between each metal level of wherein said inductance.
5. Mutual Inductance Coupling filter as claimed in claim 1, also comprise electric capacity in wherein said Mutual Inductance Coupling filter, described electric capacity includes but not limited to the electric capacity of rectangle, circle, polygonal shape, and the electric capacity of unconventional vertical structure.
6. Mutual Inductance Coupling filter as claimed in claim 1, the inductance coupling high part of wherein said mutual inductance structure unit is present between two or more resonant tank.
7. Mutual Inductance Coupling filter as claimed in claim 1, wherein said inductance changes the coupling coefficient between inductance by the size changing overlapping part.
8. Mutual Inductance Coupling filter as claimed in claim 1, wherein said two or more inductance interlocks folded array, thus reduces the size of described Mutual Inductance Coupling filter.
9. Mutual Inductance Coupling filter as claimed in claim 1, introduces adjustable transmission zero in wherein said Mutual Inductance Coupling filter, thus increases the suppression of filter in characteristic frequency section.
10. Mutual Inductance Coupling filter as claimed in claim 1, wherein said Mutual Inductance Coupling filter is by silica-based IPD fabrication techniques.
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| CN201510104697.1A CN104682910A (en) | 2015-03-10 | 2015-03-10 | Mutual inductance coupling filter |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017210814A1 (en) * | 2016-06-06 | 2017-12-14 | 华为技术有限公司 | Mutually inductively coupled filter and wireless fidelity wi-fi module |
| CN107659284A (en) * | 2017-10-26 | 2018-02-02 | 安徽云塔电子科技有限公司 | A kind of passive filter device and passive filter module |
| CN108649915A (en) * | 2018-06-20 | 2018-10-12 | 中国电子科技集团公司第十三研究所 | 3D integrates LC filters and electronic system |
| TWI656732B (en) * | 2017-10-16 | 2019-04-11 | 國立臺灣大學 | Adjustable filter |
| CN110247637A (en) * | 2019-07-09 | 2019-09-17 | 安徽安努奇科技有限公司 | A kind of filter circuit construction |
| CN111063523A (en) * | 2018-10-08 | 2020-04-24 | 沃伊亚影像有限公司 | Independent device with flat overlapping coils |
| WO2020125341A1 (en) * | 2018-12-18 | 2020-06-25 | 天津大学 | Filter unit having coupling inductor, filter, and electronic device |
| CN111446528A (en) * | 2020-04-09 | 2020-07-24 | 中国电子科技集团公司第十三研究所 | Double-layer silicon-based filter based on three-dimensional inductor |
| CN111641488A (en) * | 2020-05-28 | 2020-09-08 | 苏州汉天下电子有限公司 | Duplexer |
| CN114695339A (en) * | 2020-12-25 | 2022-07-01 | 京东方科技集团股份有限公司 | Substrate integrated with passive device and preparation method thereof |
| CN115603690A (en) * | 2022-11-15 | 2023-01-13 | 成都频岢微电子有限公司（Cn） | N77 frequency band miniaturized filter based on IPD technology |
| WO2024050442A1 (en) * | 2022-08-31 | 2024-03-07 | QuantalRF AG | Integrated filtering with coupled resonators |
| US11979114B2 (en) | 2020-09-28 | 2024-05-07 | QuantalRF AG | Amplifier including magnetically coupled feedback loop and stacked input and output stages adapted for DC current reuse |
| US12052004B2 (en) | 2019-04-02 | 2024-07-30 | QuantaIRF AG | Radio frequency power amplifier system and method of linearizing an output signal thereof |
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| CN103166593A (en) * | 2011-12-14 | 2013-06-19 | 矽品精密工业股份有限公司 | Cross-coupled band-pass filter |
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2015
- 2015-03-10 CN CN201510104697.1A patent/CN104682910A/en active Pending
Patent Citations (2)
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| US20080284540A1 (en) * | 2007-04-20 | 2008-11-20 | Fujitsu Limited | Antenna duplexer |
| CN103166593A (en) * | 2011-12-14 | 2013-06-19 | 矽品精密工业股份有限公司 | Cross-coupled band-pass filter |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107710605A (en) * | 2016-06-06 | 2018-02-16 | 华为技术有限公司 | Mutual Inductance Coupling wave filter and Wireless Fidelity WiFi modules |
| WO2017210814A1 (en) * | 2016-06-06 | 2017-12-14 | 华为技术有限公司 | Mutually inductively coupled filter and wireless fidelity wi-fi module |
| US10886884B2 (en) | 2016-06-06 | 2021-01-05 | Huawei Technologies Co., Ltd. | Inductively coupled filter and wireless fidelity WiFi module |
| TWI656732B (en) * | 2017-10-16 | 2019-04-11 | 國立臺灣大學 | Adjustable filter |
| CN107659284A (en) * | 2017-10-26 | 2018-02-02 | 安徽云塔电子科技有限公司 | A kind of passive filter device and passive filter module |
| CN108649915A (en) * | 2018-06-20 | 2018-10-12 | 中国电子科技集团公司第十三研究所 | 3D integrates LC filters and electronic system |
| US12020858B2 (en) * | 2018-10-08 | 2024-06-25 | Vayyar Imaging Ltd. | Loss compensation in radio-frequency filters |
| CN111063523A (en) * | 2018-10-08 | 2020-04-24 | 沃伊亚影像有限公司 | Independent device with flat overlapping coils |
| US20210383967A1 (en) * | 2018-10-08 | 2021-12-09 | Vayyar Imaging Ltd. | Loss compensation in radio-frequency filters |
| WO2020125341A1 (en) * | 2018-12-18 | 2020-06-25 | 天津大学 | Filter unit having coupling inductor, filter, and electronic device |
| US12052004B2 (en) | 2019-04-02 | 2024-07-30 | QuantaIRF AG | Radio frequency power amplifier system and method of linearizing an output signal thereof |
| CN110247637A (en) * | 2019-07-09 | 2019-09-17 | 安徽安努奇科技有限公司 | A kind of filter circuit construction |
| CN111446528A (en) * | 2020-04-09 | 2020-07-24 | 中国电子科技集团公司第十三研究所 | Double-layer silicon-based filter based on three-dimensional inductor |
| CN111641488A (en) * | 2020-05-28 | 2020-09-08 | 苏州汉天下电子有限公司 | Duplexer |
| US11979114B2 (en) | 2020-09-28 | 2024-05-07 | QuantalRF AG | Amplifier including magnetically coupled feedback loop and stacked input and output stages adapted for DC current reuse |
| CN114695339A (en) * | 2020-12-25 | 2022-07-01 | 京东方科技集团股份有限公司 | Substrate integrated with passive device and preparation method thereof |
| WO2024050442A1 (en) * | 2022-08-31 | 2024-03-07 | QuantalRF AG | Integrated filtering with coupled resonators |
| CN115603690A (en) * | 2022-11-15 | 2023-01-13 | 成都频岢微电子有限公司（Cn） | N77 frequency band miniaturized filter based on IPD technology |
| CN115603690B (en) * | 2022-11-15 | 2023-03-14 | 成都频岢微电子有限公司 | N77 frequency band miniaturized filter based on IPD technology |
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