CN115603690B - N77 frequency band miniaturized filter based on IPD technology - Google Patents
N77 frequency band miniaturized filter based on IPD technology Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
- H03H2001/0085—Multilayer, e.g. LTCC, HTCC, green sheets
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Abstract
The invention discloses an IPD (inverse direct phase delay) process-based N77 frequency band miniaturized filter, which comprises a substrate, and a signal input Port1, a first parallel resonator, a second parallel resonator, a third parallel resonator, a fourth parallel resonator, a fifth parallel resonator and a signal output Port2 which are arranged on the substrate and connected in sequence. In the invention, the parallel resonators simultaneously introduce capacitive coupling and inductive coupling so that zero points are generated at two responding ends, thus better inhibition is shown; the mutual inductance between the inductors is introduced to replace lumped inductors, so that the designed size and the loss caused by the common metal spiral inductor are reduced to a certain extent, and the filter response has the characteristics of small size, low loss and broadband. Compared with the 5G filter commonly used in the market, the filter has smaller size and lower processing cost, and is beneficial to large-scale production and application.
Description
Technical Field
The invention belongs to the technical field of filters, and particularly relates to a design of an IPD (inverse direct digital) process-based N77 frequency band miniaturized filter.
Background
At present, wireless communication technologies with 5G and the Internet of things as the core are rapidly advancing, and high-speed wireless communication is deeply changing and even subverting the past life and production of people. With the rapid development of communication technologies represented by 5G, filters in the frequency band below 6GHz are forced to be needed in radio frequency systems. The importance of the filter is more pronounced than for other components of the radio frequency system, especially in modules that may generate strong interference.
Today, the modern communication market is just like a arena with multiple filters according to different occasions and different characteristic requirements of the filters. From different process and structure perspectives, the microwave filter has Integrated Passive (IPD), low temperature co-fired ceramic (LTCC), surface Acoustic Wave (SAW), bulk Acoustic Wave (BAW), metal cavity, printed Circuit Board (PCB) and other MEMS processes and the like.
The low temperature co-fired ceramic (LTCC) process has the characteristics of multilayer circuit layout, high-density packaging and the like. The filter of LTCC technology on the market at present often adopts lumped circuit, through replacing lumped element with paster electric capacity and spiral inductance, cascades formation filtering response with it inside the LTCC base plate. The introduction of lumped elements leads to increased filter metal losses and increased size.
A Surface Acoustic Wave (SAW) filter is composed of a piezoelectric material and an interdigital transducer. Due to the process limitation, the performance can only be ensured in the frequency band below 1.5GHz, so that the application angle is greatly limited.
A Bulk Acoustic Wave (BAW) filter is composed of a piezoelectric material made of quartz crystal and metal attached to both sides of the piezoelectric material. The metal on the two sides of the piezoelectric material is used for exciting sound waves to vibrate on the piezoelectric substrate. Compared with the SAW filter, the BAW filter can work in a slightly high frequency range and is accompanied with lower insertion loss and unloaded Q value, but the current domestic production situation is accompanied with the defects of high processing cost, high difficulty and low yield.
The metal cavity filter takes metal as raw material and adopts a resonant cavity structure. The metal cavity filter has a firm structure and stable and reliable performance. But the method is limited by a metal structure and has the defects of low design flexibility, large volume, heavy weight and the like.
The Printed Circuit Board (PCB) process is represented by SIW (substrate integrated waveguide) and microstrip, etc., and has the characteristics of low design difficulty and processing cost, etc., and is accompanied by the advantages of wide applicable frequency band and high performance. SIW is synthesized as an artificial structure by embedding two rows of metalized vias or metalized trenches in a dielectric substrate, covering the conductors on the top and bottom of the substrate. However, due to the limitation of SIW transmission mode, electromagnetic signals below its cut-off frequency cannot be transmitted in SIW, and at the same time, due to the cavity resonance principle, there is a drawback of large size. Filters formed from microstrip resonators are often associated with significant radiation losses if they are built on the substrate of a PCB process.
To sum up, in the filter of the prior art: LTCC filter responses tend to be difficult to show good selectivity; the surface acoustic wave filter is limited by a processing technology, and has the defects of small frequency range, small use angle and the like; the bulk acoustic wave filter has the defects of high processing cost, high difficulty, low yield and the like; the metal cavity filter is limited by raw materials, and has the defects of low design flexibility, heavy weight, large volume and the like; among PCB technology filters, SIW filters have the defects of large size and the like.
Disclosure of Invention
The invention aims to solve the problem that a 5G filter under the current 6GHz frequency band is difficult to miniaturize and simultaneously has low loss and wide stop band, and provides an N77 frequency band miniaturized filter based on an IPD (inverse diode) process.
The technical scheme of the invention is as follows: the N77 frequency band miniaturization filter based on the IPD process comprises a substrate, and a signal input Port1, a first parallel resonator, a second parallel resonator, a third parallel resonator, a fourth parallel resonator, a fifth parallel resonator and a signal output Port2 which are arranged on the substrate and connected in sequence.
Further, the first parallel resonator comprises a first lumped parallel inductor L1 and a first lumped parallel capacitor C1, the second parallel resonator comprises a first parallel mutual inductor L2 'and a second lumped parallel capacitor C2, the third parallel resonator comprises a second lumped parallel inductor L3 and a third lumped parallel capacitor C3, the fourth parallel resonator comprises a second parallel mutual inductor L4' and a fourth lumped parallel capacitor C4, and the fifth parallel resonator comprises a third lumped parallel inductor L5 and a fifth lumped parallel capacitor C5; one end of the first lumped parallel inductor L1 and one end of the first lumped parallel capacitor C1 are connected to the signal input Port1, the other end of the first lumped parallel inductor L1 and the other end of the first lumped parallel capacitor C1 are connected to and grounded, the first lumped mutual inductor L2 'and the second lumped parallel capacitor C2 are connected in parallel, one end of the second lumped parallel capacitor C2 is connected to the grounded end of the first lumped parallel inductor L1, the other end of the second lumped parallel capacitor C2 is connected to one end of the second lumped parallel inductor L3, the second lumped parallel inductor L3 and the third lumped parallel capacitor C3 are connected in parallel, the other end of the second lumped parallel inductor L3 is connected to one end of the fourth lumped parallel capacitor C4, the second lumped parallel inductor L4' and the fourth lumped parallel capacitor C4 are connected in parallel, the other end of the fourth lumped parallel capacitor C4 is connected to the grounded end of the third lumped parallel inductor L5, one end of the third parallel inductor L5 and one end of the fifth parallel capacitor C5 are connected to the signal input Port2, and the other end of the third parallel inductor L5 and the fifth parallel capacitor C5 are connected to and the grounded.
Further, a first ground via G1, a second ground via G2, a third ground via G3, a fourth ground via G4, a fifth ground via G5, a sixth ground via G6, a seventh ground via G7, and an eighth ground via G8 are also provided on the substrate; the first, second, third and fourth ground vias G1, G2, G3 and G4 provide a GSG structure for signal input and output of the filter; the fifth ground via G5 and the sixth ground via G6 provide a ground response for the filter; the first lumped parallel inductor L1, the first lumped parallel capacitor C1 and the second lumped parallel capacitor C2 are all grounded through a seventh grounding through hole G7; the fourth lumped parallel capacitor C4, the third lumped parallel inductor L5 and the fifth lumped parallel capacitor C5 are all grounded through the eighth grounding via G8.
Further, the first parallel mutual inductance L2 'is an equivalent inductance generated by mutual inductance of the first lumped parallel inductance L1 and the second lumped parallel inductance L3, and the second parallel mutual inductance L4' is an equivalent inductance generated by mutual inductance of the second lumped parallel inductance L3 and the third lumped parallel inductance L5.
Further, the first lumped parallel inductor L1, the second lumped parallel inductor L3, and the third lumped parallel inductor L5 are all irregular polygonal shapes, and adopt a laminated winding structure.
Further, the first lumped parallel capacitor C1, the second lumped parallel capacitor C2, the third lumped parallel capacitor C3, the fourth lumped parallel capacitor C4, and the fifth lumped parallel capacitor C5 are all MIM plate capacitors.
Further, the material of the substrate is gallium arsenide.
Further, the filter operates in the N77 band with a center frequency of 3.75GHz.
The invention has the beneficial effects that:
(1) The mutual inductance between the inductors is introduced to replace lumped inductors, so that the designed size and the loss caused by the common metal spiral inductor are reduced to a certain extent, and the filter response has the characteristics of small size, low loss and broadband.
(2) The invention provides a special-shaped inductor different from a commonly used metal spiral inductor, and the inductor adopts a laminated winding structure to ensure that a single lumped inductor realizes a larger inner diameter and a higher Q value on the basis of compact structure.
(3) Zero points are introduced into two sides of the passband, and the-20 dB out-of-band rejection of the upper stopband reaches 6.64 f 0 （f 0 Is the filter center frequency) has excellent upper stop band performance.
(4) Compared with the commonly used 5G filter in the market, the filter has smaller size and lower loss, and is beneficial to large-scale production and application.
Drawings
Fig. 1 is a schematic diagram of a three-dimensional circuit structure of an IPD process-based N77 frequency band miniaturized filter according to an embodiment of the present invention.
Fig. 2 is an equivalent circuit diagram of an IPD process-based N77 band miniaturized filter according to an embodiment of the present invention.
Fig. 3 is a frequency response curve diagram of the IPD process-based miniaturized filter of 0-14GHz in the N77 band, according to the embodiment of the present invention.
Fig. 4 is a frequency response curve diagram of the IPD process-based miniaturized filter of 0-35GHz in the N77 band, according to the embodiment of the present invention.
Fig. 5 is a graph showing an amplified frequency response of an IPD process-based N77 band miniaturized filter according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It is to be understood that the embodiments shown and described in the drawings are merely exemplary and are intended to illustrate the principles and spirit of the invention, not to limit the scope of the invention.
The embodiment of the invention provides an IPD (inverse digital delay) process-based N77 frequency band miniaturized filter, which comprises a substrate, a signal input Port1, a first parallel resonator, a second parallel resonator, a third parallel resonator, a fourth parallel resonator, a fifth parallel resonator and a signal output Port2, wherein the signal input Port1, the first parallel resonator, the second parallel resonator, the third parallel resonator, the fourth parallel resonator, the fifth parallel resonator and the signal output Port2 are arranged on the substrate and are sequentially connected with one another as shown in figures 1 and 2.
The first parallel resonator comprises a first lumped parallel inductor L1 and a first lumped parallel capacitor C1, the second parallel resonator comprises a first parallel mutual inductor L2 'and a second lumped parallel capacitor C2, the third parallel resonator comprises a second lumped parallel inductor L3 and a third lumped parallel capacitor C3, the fourth parallel resonator comprises a second parallel mutual inductor L4' and a fourth lumped parallel capacitor C4, and the fifth parallel resonator comprises a third lumped parallel inductor L5 and a fifth lumped parallel capacitor C5.
One end of the first lumped parallel inductor L1 and one end of the first lumped parallel capacitor C1 are connected to the signal input Port1, the other end of the first lumped parallel inductor L1 and the other end of the first lumped parallel capacitor C1 are connected to and grounded, the first lumped mutual inductor L2 'and the second lumped parallel capacitor C2 are connected in parallel, one end of the second lumped parallel capacitor C2 is connected to the ground terminal of the first lumped parallel inductor L1, the other end of the second lumped parallel capacitor C2 is connected to one end of the second lumped parallel inductor L3, the second lumped parallel inductor L3 and the third lumped parallel capacitor C3 are connected in parallel, the other end of the second lumped parallel inductor L3 is connected to one end of the fourth lumped parallel capacitor C4, the second lumped parallel inductor L4' and the fourth lumped parallel capacitor C4 are connected in parallel, the other end of the fourth lumped parallel capacitor C4 is connected to the ground terminal of the third lumped parallel inductor L5, one end of the third lumped parallel inductor L5 and one end of the fifth parallel capacitor C5 are connected to the signal input Port2, and the other end of the third parallel inductor L5 is connected to the fifth parallel capacitor C5 and the ground.
In the embodiment of the present invention, as shown in fig. 1, a first ground via G1, a second ground via G2, a third ground via G3, a fourth ground via G4, a fifth ground via G5, a sixth ground via G6, a seventh ground via G7, and an eighth ground via G8 are further disposed on the substrate.
The first ground through hole G1, the second ground through hole G2, the third ground through hole G3 and the fourth ground through hole G4 provide a GSG structure for signal input and signal output of the filter; the fifth ground via G5 and the sixth ground via G6 provide a ground response for the filter; the first lumped parallel inductor L1, the first lumped parallel capacitor C1 and the second lumped parallel capacitor C2 are all grounded through a seventh grounding through hole G7; the fourth lumped parallel capacitor C4, the third lumped parallel inductor L5 and the fifth lumped parallel capacitor C5 are all grounded through the eighth grounding via G8.
In the embodiment of the invention, the first parallel mutual inductance L2 'and the second parallel mutual inductance L4' are not physical inductances, the first parallel mutual inductance L2 'is an equivalent inductance generated by mutual inductance of the first lumped parallel inductance L1 and the second lumped parallel inductance L3, and the second parallel mutual inductance L4' is an equivalent inductance generated by mutual inductance of the second lumped parallel inductance L3 and the third lumped parallel inductance L5.
In the embodiment of the invention, the first lumped parallel inductor L1, the second lumped parallel inductor L3 and the third lumped parallel inductor L5 are all in irregular polygon shapes, and adopt a laminated winding structure, so that good mutual inductance operation can be generated while keeping compact size, and compared with the traditional metal spiral inductor, the inner diameter of the inductor is increased, the Q value is higher, and the circuit loss is reduced.
In the embodiment of the invention, the first lumped parallel capacitor C1, the second lumped parallel capacitor C2, the third lumped parallel capacitor C3, the fourth lumped parallel capacitor C4 and the fifth lumped parallel capacitor C5 are all MIM flat capacitors.
In the embodiment of the invention, the substrate is made of gallium arsenide, the filter operates in an N77 frequency band (3300 MHz-4200 MHz), the center frequency is 3.75GHz, and the physical size is 1320um × 590um.
As can be seen from figures 3-5, the best loss value of the pass band of the filter provided by the invention is-1.53dB @3.758GHz, the 3dB bandwidth point is respectively positioned at-3 dB @3.02GHz and-3 dB @4.7GHz, the 3dB relative bandwidth of the filter is 44.8%, and the out-of-band inhibition of the upper stop band at-20 dB reaches 6.64% f 0 （f 0 The filter center frequency).
Based on the performance analysis, the IPD filter chip applicable to the N77 frequency band has the advantages of small size, wide bandwidth, high selectivity and strong stop band inhibition capability. Compared with other products of the same type on the market, the invention has stronger advantages and is beneficial to large-scale production and application.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art, having the benefit of this disclosure, may effect numerous modifications thereto and changes may be made without departing from the scope of the invention in its aspects.
Claims (5)
1. The N77 frequency band miniaturization filter based on the IPD process is characterized by comprising a substrate, and a signal input Port1, a first parallel resonator, a second parallel resonator, a third parallel resonator, a fourth parallel resonator, a fifth parallel resonator and a signal output Port2 which are arranged on the substrate and connected in sequence;
the first parallel resonator comprises a first lumped parallel inductance L1 and a first lumped parallel capacitance C1, the second parallel resonator comprises a first parallel mutual inductance L2 'and a second lumped parallel capacitance C2, the third parallel resonator comprises a second lumped parallel inductance L3 and a third lumped parallel capacitance C3, the fourth parallel resonator comprises a second parallel mutual inductance L4' and a fourth lumped parallel capacitance C4, and the fifth parallel resonator comprises a third lumped parallel inductance L5 and a fifth lumped parallel capacitance C5;
one end of the first lumped parallel inductor L1 and one end of the first lumped parallel capacitor C1 are connected to the signal input Port1, the other end of the first lumped parallel inductor L1 and the other end of the first lumped parallel capacitor C1 are connected to and grounded, the first parallel mutual inductor L2 'and the second lumped parallel capacitor C2 are connected in parallel, one end of the second lumped parallel capacitor C2 is connected to the grounded end of the first lumped parallel inductor L1, the other end of the second lumped parallel capacitor C2 is connected to one end of the second lumped parallel inductor L3, the second lumped parallel inductor L3 and the third lumped parallel capacitor C3 are connected in parallel, the other end of the second lumped parallel inductor L3 is connected to one end of the fourth lumped parallel capacitor C4, the second parallel mutual inductor L4' and the fourth lumped parallel capacitor C4 are connected to the grounded end of the third lumped parallel inductor L5, one end of the third parallel inductor L5 and one end of the fifth lumped parallel capacitor C5 are connected to the signal output Port2, and the other end of the third parallel inductor L5 and the fifth parallel capacitor C5 are connected to the grounded end of the signal input Port 1; one end of the third lumped parallel capacitor C3 is connected with the parallel ends of the first parallel mutual inductance L2 'and the second lumped parallel capacitor C2, and the other end of the third lumped parallel capacitor C3 is connected with the parallel ends of the second parallel mutual inductance L4' and the fourth lumped parallel capacitor C4; the first parallel mutual inductance L2 'is an equivalent inductance generated by mutual inductance of a first lumped parallel inductance L1 and a second lumped parallel inductance L3, and the second parallel mutual inductance L4' is an equivalent inductance generated by mutual inductance of a second lumped parallel inductance L3 and a third lumped parallel inductance L5;
the first lumped parallel inductor L1, the second lumped parallel inductor L3 and the third lumped parallel inductor L5 are all in irregular polygon shapes, and adopt a laminated winding structure.
2. The N77 frequency band miniaturized filter of claim 1, wherein a first ground via G1, a second ground via G2, a third ground via G3, a fourth ground via G4, a fifth ground via G5, a sixth ground via G6, a seventh ground via G7 and an eighth ground via G8 are further provided on the substrate;
the first ground through hole G1, the second ground through hole G2, the third ground through hole G3 and the fourth ground through hole G4 provide GSG structures for signal input and signal output of the filter;
the fifth grounding through hole G5 and the sixth grounding through hole G6 provide grounding response for the filter;
the first lumped parallel inductor L1, the first lumped parallel capacitor C1 and the second lumped parallel capacitor C2 are all grounded through a seventh grounding through hole G7;
and the fourth lumped parallel capacitor C4, the third lumped parallel inductor L5 and the fifth lumped parallel capacitor C5 are all grounded through an eighth grounding through hole G8.
3. The N77 frequency band miniaturized filter of claim 1 wherein the first, second, third, fourth and fifth lumped parallel capacitors C1, C2, C3, C4 and C5 are MIM plate capacitors.
4. The miniaturized filter of claim 1 wherein the substrate is gallium arsenide.
5. The miniaturized filter of claim 1 wherein the filter operates in the N77 band and has a center frequency of 3.75GHz.
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