CN114899560B - N79 frequency band miniaturized wide stop band filter based on LTCC technology - Google Patents
N79 frequency band miniaturized wide stop band filter based on LTCC technology Download PDFInfo
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- CN114899560B CN114899560B CN202210705746.7A CN202210705746A CN114899560B CN 114899560 B CN114899560 B CN 114899560B CN 202210705746 A CN202210705746 A CN 202210705746A CN 114899560 B CN114899560 B CN 114899560B
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- 238000005516 engineering process Methods 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 150
- 239000002184 metal Substances 0.000 claims abstract description 150
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 86
- 229910052709 silver Inorganic materials 0.000 claims abstract description 85
- 239000004332 silver Substances 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000003990 capacitor Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 6
- 238000005192 partition Methods 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims description 2
- 230000004044 response Effects 0.000 description 9
- 238000004891 communication Methods 0.000 description 7
- 230000006872 improvement Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
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Abstract
The invention discloses an N79 frequency band miniaturized wide stop band filter based on an LTCC technology, which is characterized by comprising the following components: a metal shielding cavity; a dielectric substrate; a metallic silver layer; a resonator; metallizing the through holes; a metal belt; the dielectric substrate and the metal silver layer are arranged in the metal shielding cavity; the metal silver layers are arranged on the upper side and the lower side of the dielectric substrates; the resonator comprises a capacitive loading part and an equal impedance line; the capacitor loading part of the resonator consists of two metal silver layers and a metallized through hole for connecting the two metal silver layers; the metal belt is positioned at two sides of the dielectric substrate and the metal silver layer and can receive and transmit signals from the feed source; the capacitive loading part of the resonator can receive the signal transmitted by the metal belt, and the short-circuited end of the resonator is realized by an equal-impedance line connected with the metal shielding cavity.
Description
Technical Field
The invention relates to the technical field of filters, in particular to the technical field of N79 frequency band miniaturization wide stop band filters based on an LTCC (Low temperature Co-fired ceramic) process.
Background
Today, the modern communication market is just as likely to be an arena for a variety of filters, depending on the different requirements of the filters for different applications. Microwave filters are known from different process and structural perspectives, as low temperature co-fired ceramics (LTCC), surface Acoustic Waves (SAW), bulk Acoustic Waves (BAW), metal cavities, printed Circuit Boards (PCB), and other MEMS processes.
Whereas in the prior art filters: the surface acoustic wave filter is limited by a processing technology, and has the defects of small frequency range, small use angle and the like; the bulk acoustic wave filter has the defects of high processing cost, high difficulty, low yield and the like; the metal cavity filter is limited by raw materials, and has the defects of low design flexibility, heavy mass, large volume and the like; in the PCB process filter, the SIW filter has the defects of large volume and the like; the low-temperature co-fired ceramic (LTCC) process has the characteristics of multi-layer circuit layout, high-density packaging and the like, a lumped circuit is often adopted in a filter of the LTCC process, and a chip capacitor and a spiral inductor are used for replacing the lumped element to form a filter response in the LTCC substrate in a cascading manner, but the metal loss of the filter is increased, the size of the filter is increased, and the performance of the filter is reduced.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a miniaturized high-selectivity band-pass filter based on an LTCC process, which is designed based on the technologies of a quarter-wavelength capacitor loading short-circuit resonator, a surrounding metal layer shielding cavity, a metallized through hole, the LTCC process and the like by taking a 5G communication N79 frequency band (4400-5000 MHz) as an application background. By drawing metal circuits on two sides of each substrate of the LTCC, the same resonator is constructed to be positioned on different layers, and the resonators positioned on different layers are subjected to energy coupling in the horizontal and vertical directions, so that the space is fully utilized, and the miniaturized design is realized; the metal shielding cavity is constructed by utilizing metals attached to the periphery, so that energy is bound in the closed space, radiation loss is reduced, and the electromagnetic compatibility of the filter is improved. Meanwhile, the metal shells around the resonator can be grounded, so that the number of the metallized through holes required by the short circuit of the resonator to the ground is reduced, the loss is effectively reduced, and the layout is more flexible.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
an N79 frequency band miniaturized wide stop band filter based on an LTCC process, which is characterized by comprising:
a metal shielding cavity;
a dielectric substrate;
a metallic silver layer;
a resonator;
metallizing the through holes;
a metal belt;
the dielectric substrate and the metal silver layer are arranged in the metal shielding cavity;
the metal silver layers are arranged on the upper side and the lower side of the dielectric substrates;
the resonator comprises a capacitive loading part and an equal impedance line;
the capacitor loading part of the resonator consists of two metal silver layers and a metallized through hole for connecting the two metal silver layers;
the metal belt is positioned at two sides of the dielectric substrate and the metal silver layer and can receive and transmit signals from the feed source; the capacitive loading part of the resonator can receive the signal transmitted by the metal belt, and the short-circuited end of the resonator is realized by an equal-impedance line connected with the metal shielding cavity.
Preferably, the equipotential lines are arranged in a bent manner.
Preferably, the resonator is a quarter-wavelength capacitive loaded short-circuited resonator.
Preferably, the metal shielding cavity is a metal shell with a closed periphery.
Preferably, the metal shell is formed by packaging the whole metal silver around the dielectric substrate and the metal silver layer.
Preferably, the filter is a third-order band-pass filter.
Preferably, the dielectric substrate has 8 layers, and the metal silver layer has 9 layers;
the 1 st layer of metal silver layer is a metal shielding cavity bottom plate, the 1 st layer of metal silver layer is a metal shielding cavity top plate, and the 2 nd to 8 th layers of metal silver layers are respectively arranged between adjacent layers of the 1 st to 8 th layers of medium substrates;
the resonators comprise a first resonator, a second resonator and a third resonator;
the capacitor loading parts of the first resonator and the third resonator are composed of a 3 rd layer of metal silver layer, a 5 th layer of metal silver layer and a metallized through hole for connecting the two metal silver layers, and are connected with an equal impedance line through the metal through holes; the capacitive loading part of the second resonator is composed of a flat capacitor realized by a 2 nd layer of metal silver layer and a 4 th layer of metal silver layer, an equal impedance line of the flat capacitor is positioned on a 7 th layer of metal silver layer, and the two parts are connected through a through metalized through hole.
Preferably, the 6 th metal silver layer is provided with a metal silver separator for controlling the coupling of space energy; and three circular holes are formed in the partition plate, so that the metalized through holes can pass through.
Preferably, the top plate of the metal shielding cavity is connected with the feed source, and the metal strips on two sides transmit signals to the 5 th metal silver layer and then to the capacitance loading part of the first resonator.
Preferably, the filter is designed to have a frequency band of 4400MHz-5000MHz.
The beneficial effects of the invention are as follows:
(1) In the filter, the metal shielding cavity is formed by packaging the whole silver metal around the device. The metal shielding cavity in the common filter is composed of the metal on the top layer and the bottom layer of the device and the metal through holes penetrating all around, and the filter simplifies the metal through holes penetrating all around into the metal walls around. This reduces radiation loss to some extent, improves the electromagnetic compatibility of the filter, and also further improves the Q value of the filter.
(2) The filter uses LTCC fabrication process, but does not cascade to form a filter response using chip capacitors and spiral inductors instead of distributed components, unlike the commonly available LTCC filters. The filter uses quarter-wavelength capacitive loading to create a resonance point for the shorted resonator. The use of resonators instead of distributed elements reduces the use of metal to some extent, reducing metal losses.
The filter size is only 1.274mm by 1.024mm by 0.57mm and the electrical size is 0.074λ0 by 0.059λ0 by 0.033λ0. In summary, the filter has the advantages of miniaturization, wide stop band, low loss, high power capacity and the like, and is suitable for the N79 frequency band in 5G.
Description of the drawings:
FIG. 1 is a schematic diagram of an N79 band miniaturized wide stop band filter based on LTCC technology;
FIG. 2 is a metal shielding shell of an N79 frequency band miniaturized wide stop band filter based on an LTCC process;
FIG. 3 is a side view of an N79 band miniaturized wide stop band filter based on LTCC technology;
FIG. 4 is a front view of an N79 band miniaturized wide stop band filter based on LTCC technology;
FIG. 5 is a 3D schematic diagram of an N79 band miniaturized wide stop band filter based on LTCC technology;
FIG. 6 is a frequency response of an N79 band miniaturized wide stop band filter at 1-17GHz based on LTCC technology;
FIG. 7 is a frequency response of an N79 band miniaturized wide stop band filter at 1-23GHz based on LTCC technology;
reference numerals: 1-a metal shielding cavity; 2-a dielectric substrate; 3-a metallic silver layer; a 4-resonator; 5-metallizing the through holes; 6-a metal belt; 7-metallic silver separator; 401-a first resonator; 402-a second resonator; 403-a third resonator; 301-1 st metallic silver layer; 302-9 th metallic silver layers; 303-3 rd metallic silver layer; 304-5 th metallic silver layer; 305-layer 2 metallic silver layer; 306-7 th metallic silver layer; 701-a circular hole; 101-a metal shielding cavity bottom plate; 102-metal shield chamber top plate.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-7, the following embodiments are provided in the present invention:
example 1
An N79 frequency band miniaturized wide stop band filter based on an LTCC process, which is characterized by comprising:
a metal shielding cavity;
a dielectric substrate;
a metallic silver layer;
a resonator;
metallizing the through holes;
a metal belt;
the dielectric substrate and the metal silver layer are arranged in the metal shielding cavity;
the metal silver layers are arranged on the upper side and the lower side of the dielectric substrates;
the resonator comprises a capacitive loading part and an equal impedance line;
the capacitor loading part of the resonator consists of two metal silver layers and a metallized through hole for connecting the two metal silver layers;
the metal belt is positioned at two sides of the dielectric substrate and the metal silver layer and can receive and transmit signals from the feed source; the capacitive loading part of the resonator can receive the signal transmitted by the metal belt, and the short-circuited end of the resonator is realized by an equal-impedance line connected with the metal shielding cavity.
The LTCC process has the characteristics of multi-layer circuit layout and high-density packaging, and the embodiment considers that the current filter of the LTCC process adopts a lumped circuit, and the filter response is formed by cascading the chip capacitor and the spiral inductor inside the LTCC substrate instead of the lumped element. This results in an increase in the metal loss of the filter and an increase in the size, so that the filter performance is lowered.
In the embodiment, the metal circuits are drawn on two sides of each substrate of the LTCC, the same resonator is constructed and positioned on different layers, and the resonators positioned on different layers are subjected to energy coupling in the horizontal and vertical directions, so that the space is fully utilized, and the miniaturized design is realized.
Example 2
In this embodiment, as a further improvement of the technical solution of embodiment 1, it is characterized in that:
the resonator is a quarter-wavelength capacitor loading short-circuit resonator; and the equal impedance lines are arranged in a bending way.
In the embodiment, the resonator uses capacitive loading, and the design not only further reduces the overall size of the filter, but also enables the main mode of the resonator in the higher harmonic principle, thereby enabling the filter to realize wide stop band response. Meanwhile, the resonator consists of a capacitor loading part and a bent equal impedance line part, the capacitor loading part and the bent equal impedance line part are connected through a metallized through hole, and the equal impedance line part is bent, so that the overall size of the filter is further reduced.
Example 3
In this embodiment, as a further improvement of the technical solution of embodiment 2, it is characterized in that:
the method is characterized in that:
the metal shielding cavity is a metal shell with the periphery being sealed.
The metal shell is formed by packaging complete metal silver around the dielectric substrate and the metal silver layer.
The metal shielding cavity in the existing filter is often formed by metal on the top layer and the bottom layer of the device and surrounding penetrating metalized through holes, the substrate is wrapped by the surrounding closed metal shell, and the surrounding metal shell replaces the surrounding penetrating metalized through holes used in the shielding cavity of the traditional filter. The metal layer is used for replacing the metalized through hole, so that the occupied area of the metal shielding cavity is reduced, miniaturization is realized, and the periphery of the metal shielding cavity can be grounded, so that the grounding of the filter circuit is more flexible.
Example 4
In this embodiment, as a further improvement of the technical solution of embodiment 3, it is characterized in that:
the dielectric substrate is 8 layers, and the metal silver layer is 9 layers;
the 1 st layer of metal silver layer is a metal shielding cavity bottom plate, the 1 st layer of metal silver layer is a metal shielding cavity top plate, and the 2 nd to 8 th layers of metal silver layers are respectively arranged between adjacent layers of the 1 st to 8 th layers of medium substrates;
the resonators comprise a first resonator, a second resonator and a third resonator;
the capacitor loading parts of the first resonator and the third resonator are composed of a 3 rd layer of metal silver layer, a 5 th layer of metal silver layer and a metallized through hole for connecting the two metal silver layers, and are connected with an equal impedance line through the metal through holes; the capacitive loading part of the second resonator is composed of a flat capacitor realized by a 2 nd layer of metal silver layer and a 4 th layer of metal silver layer, an equal impedance line of the flat capacitor is positioned on a 7 th layer of metal silver layer, and the two parts are connected through a through metalized through hole.
The top plate of the metal shielding cavity is connected with the feed source, and metal strips on two sides transmit signals to the 5 th metal silver layer and then to the capacitance loading part of the first resonator.
In this embodiment, each of the three resonators is composed of a capacitive loading portion and a bent equal-impedance line portion. The feed signal passes through the metal strips on both sides of the structure to the 5 th metallic silver layer (silver_5) and is directly connected to the capacitive loading portion of the first resonator in the filter. The first resonator and the second resonator have the same size, the capacitance loading parts of the first resonator and the second resonator are respectively formed by a 3 rd layer of metal silver layer (silver_3), a 5 th layer of metal silver layer (silver_5) and a metalized through hole for connecting the two metal silver layers, the equal impedance line parts of the first resonator and the second resonator are bent to reduce the size, and the two parts are connected by the metalized through hole. The short-circuited ends of the first resonator and the third resonator are realized by an equal-impedance line connected to the metal wall. The capacitive loading part of the second resonator is composed of plate capacitors which are arranged on the 2 nd layer of metal silver layer (silver_2) and the 4 th layer of metal silver layer (silver_4), the equal impedance line part of the second resonator is arranged on the 7 th layer of metal silver layer (silver_7), and the two parts are connected through a through metallization through hole, so that the third-order bandpass response is realized.
Therefore, the scheme realizes miniaturization of the third-order band-pass filter, and simultaneously changes the occurrence frequency of the higher-order mode of the resonator by carrying out capacitive loading on the equivalent impedance line, thereby realizing wide stop-band response of the filter.
Example 5
In this embodiment, as a further improvement of the technical solution of embodiment 4, it is characterized in that:
the 6 th layer of metal silver layer is provided with a metal silver partition board for controlling the coupling of space energy; and three circular holes are formed in the partition plate, so that the metalized through holes can pass through.
The metallic silver partition plate is used for controlling the coupling of space energy, further improves the performance of the filter and achieves wide stop band response.
Example 6
In this embodiment, as a further improvement of the technical solutions of embodiments 1 to 5, it is characterized in that:
the design frequency band of the filter is 4400MHz-5000MHz.
At present, a wireless communication technology taking 5G and the Internet of things as cores is rapidly advancing, and high-speed wireless communication is deeply changing or even subverting past life production of people. With the rapid development of communication technologies represented by 5G, a filter of a frequency band of 6GHz or less is urgently required in a radio frequency system, and the 5G communication N79 frequency band is 4400 to 5000MHz.
In this embodiment, the filter is designed to have a frequency band of N79 (4400 MHz-5000 MHz), a center frequency of 4.75GHz, a 3dB bandwidth of 1.26GHz (4.08-5.34 GHz), a relative bandwidth of-1.62 dB with minimum insertion loss in-band, and an upper stop band-20 dB out-of-band rejection of 4.67f0 (f 0 is the filter center frequency). The physical size of the filter is 1.274mm multiplied by 1.024mm multiplied by 0.57mm, and the electrical size is 0.074λ 0 ×0.059λ 0 ×0.033λ 0 The size of the filter is the same as or even smaller than that of a common 5G filter, and the processing cost is lower, so that the filter is beneficial to mass production and application. Therefore, the filter is suitable for the N79 frequency band in 5G, and has the advantages of miniaturization, wide stop band, low loss, high power capacity and the like.
In describing embodiments of the present invention, it is to be understood that terms "upper", "lower", "front", "rear", "left", "right", "horizontal", "center", "top", "bottom", "inner", "outer", and the like indicate an azimuth or positional relationship.
In describing embodiments of the present invention, it should be noted that the terms "mounted," "connected," and "assembled" are to be construed broadly, as they may be fixedly connected, detachably connected, or integrally connected, unless otherwise specifically indicated and defined; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In the description of embodiments of the invention, a particular feature, structure, material, or characteristic may be combined in any suitable manner in one or more embodiments or examples.
In the description of the embodiments of the present invention, it is to be understood that "-" and "-" denote the same ranges of the two values, and the ranges include the endpoints. For example, "A-B" means a range greater than or equal to A and less than or equal to B. "A-B" means a range of greater than or equal to A and less than or equal to B.
In the description of embodiments of the present invention, the term "and/or" is merely an association relationship describing an association object, meaning that three relationships may exist, e.g., a and/or B, may represent: a exists alone, A and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. An N79 frequency band miniaturized wide stop band filter based on an LTCC process, which is characterized by comprising:
a metal shielding cavity;
a dielectric substrate;
a metallic silver layer;
a resonator;
metallizing the through holes;
a metal belt;
the dielectric substrate and the metal silver layer are arranged in the metal shielding cavity;
the metal silver layers are arranged on the upper side and the lower side of the dielectric substrates;
the resonator comprises a capacitive loading part and an equal impedance line;
the capacitor loading part of the resonator consists of two metal silver layers and a metallized through hole for connecting the two metal silver layers;
the metal belt is positioned at two sides of the dielectric substrate and the metal silver layer and can receive and transmit signals from the feed source; the capacitive loading part of the resonator can receive signals transmitted by the metal belt, and the short-circuited end of the resonator is realized by an equal-impedance line connected with the metal shielding cavity;
the metal shielding cavity is a metal shell with the periphery being sealed;
the dielectric substrate is 8 layers, and the metal silver layer is 9 layers;
the 1 st layer of metal silver layer is a metal shielding cavity bottom plate, the 9 th layer of metal silver layer is a metal shielding cavity top plate, and the 2 nd to 8 th layers of metal silver layers are respectively arranged between adjacent layers of the 1-8 layers of medium substrates;
the resonators comprise a first resonator, a second resonator and a third resonator;
the capacitor loading parts of the first resonator and the third resonator are composed of a 3 rd layer of metal silver layer, a 5 th layer of metal silver layer and a metallized through hole for connecting the two metal silver layers, and are connected with an equal impedance line through the metal through holes; the capacitive loading part of the second resonator is composed of a flat capacitor realized by a 2 nd layer of metal silver layer and a 4 th layer of metal silver layer, an equal impedance line of the flat capacitor is positioned on a 7 th layer of metal silver layer, and the two parts are connected through a through metalized through hole.
2. The N79-band miniaturized wide stop band filter based on LTCC technology as set forth in claim 1, wherein: the equal impedance lines are arranged in a bending mode.
3. The N79-band miniaturized wide stop band filter based on LTCC technology as claimed in claim 2, wherein:
the resonator is a quarter-wavelength capacitive loading short-circuit resonator.
4. An LTCC process based N79 band miniaturized wide stop band filter as claimed in claim 3, wherein:
the metal shell is formed by packaging complete metal silver around the dielectric substrate and the metal silver layer.
5. The N79-band miniaturized wide stop band filter based on LTCC technology as set forth in claim 4, wherein:
the filter is a third-order band-pass filter.
6. The N79-band miniaturized wide stop band filter based on LTCC technology as set forth in claim 5, wherein:
the 6 th layer of metal silver layer is provided with a metal silver partition board for controlling the coupling of space energy; and three circular holes are formed in the partition plate, so that the metalized through holes can pass through.
7. The N79-band miniaturized wide stop band filter based on LTCC technology as set forth in claim 6, wherein:
the shielding cavity top plate is connected with the feed source, and metal strips on two sides transmit signals to the 5 th metal silver layer and then to the capacitance loading part of the first resonator.
8. An N79 band miniaturized wide stop band filter based on LTCC technology as claimed in claims 1-7, wherein:
the design frequency band of the filter is 4400MHz-5000MHz.
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| CN115549633B (en) * | 2022-10-27 | 2023-07-28 | 泓林微电子（昆山）有限公司 | Substrate integrated inductance shielding structure, acoustic wave filter device formed by same and application of acoustic wave filter device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103378387A (en) * | 2013-07-02 | 2013-10-30 | 华南理工大学 | Wide-stop-band LTCC band-pass filter based on frequency selectivity coupling technology |
| CN112242597A (en) * | 2020-12-11 | 2021-01-19 | 成都频岢微电子有限公司 | Miniaturized high-selectivity wide-stop-band-pass filter based on multi-layer PCB structure |
| CN113708027A (en) * | 2021-08-23 | 2021-11-26 | 成都频岢微电子有限公司 | Capacitor loading type miniaturized 5G filter based on multilayer PCB structure |
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| US7012484B2 (en) * | 2004-04-26 | 2006-03-14 | Integrated System Solution Corp. | Filter using multilayer ceramic technology and structure thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103378387A (en) * | 2013-07-02 | 2013-10-30 | 华南理工大学 | Wide-stop-band LTCC band-pass filter based on frequency selectivity coupling technology |
| CN112242597A (en) * | 2020-12-11 | 2021-01-19 | 成都频岢微电子有限公司 | Miniaturized high-selectivity wide-stop-band-pass filter based on multi-layer PCB structure |
| CN113708027A (en) * | 2021-08-23 | 2021-11-26 | 成都频岢微电子有限公司 | Capacitor loading type miniaturized 5G filter based on multilayer PCB structure |
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