CN114843723B - Band-stop filter and multi-stop band filter - Google Patents

Band-stop filter and multi-stop band filter Download PDF

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Publication number
CN114843723B
CN114843723B CN202110132027.6A CN202110132027A CN114843723B CN 114843723 B CN114843723 B CN 114843723B CN 202110132027 A CN202110132027 A CN 202110132027A CN 114843723 B CN114843723 B CN 114843723B
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dielectric resonator
band
dielectric
resonator
filter
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CN114843723A (en
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赵国帅
梁丹
王永彪
俞熹
刘止愚
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Shanghai Huawei Technologies Co Ltd
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Shanghai Huawei Technologies Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/205—Comb or interdigital filters; Cascaded coaxial cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/10—Dielectric resonators

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  • Electromagnetism (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

A band stop filter comprising: the resonant module and the dielectric substrate are connected; the resonance module comprises an input port, a first dielectric resonator, a second dielectric resonator, a first resonance unit and an output port, a coupling pattern is arranged between the first dielectric resonator and the second dielectric resonator, the coupling pattern is arranged between one dielectric resonator and the first dielectric resonator in the first resonance unit, a transmission conductor is arranged inside the dielectric substrate, the input end of the transmission conductor is connected with the input port through a first conductive hole, and the output end of the transmission conductor is connected with the output port through a second conductive hole. Each dielectric resonator is arranged in one resonant cavity, so that a plurality of layers of row cavities can be formed, the resonance effect can be improved by utilizing the coupling among the cavities of the plurality of layers of row cavities, and the suppression degree of a specified frequency band is higher.

Description

Band-stop filter and multi-stop band filter
Technical Field
The application relates to the technical field of communication, in particular to a band-stop filter and a multi-stop-band filter.
Background
In the field of communications, a band-stop filter is a commonly used device. The band-stop filter is a filter that suppresses a signal of a certain frequency band and allows signals of the remaining frequency bands to pass through.
Referring to fig. 1, there is a band stop filter 100 including a dielectric block, an external electrode 102, a resonant hole 106, a capacitor pattern 110, a coupling pattern 108, an input electrode 112, and an output electrode 114. The plurality of resonant apertures 106 are arranged in a linear array, with the resonant apertures 106 spaced apart by a quarter wavelength. The input electrode 112 and the output electrode 114 are connected through the bar pattern 120 such that a specific frequency band is blocked by the capacitive pattern 110, the coupling pattern 108, and the resonance hole 106 when a signal input through the bar pattern 120 is transmitted.
Fig. 2 is a circuit schematic of the band-stop filter 100. Referring to fig. 2, the input electrode 112 and the output electrode 114 are connected by a stripe pattern 120, and the stripe pattern 120 is respectively coupled with a dielectric resonator 201, a dielectric resonator 202, a dielectric resonator 203, and a dielectric resonator 204, each of which includes a resonance hole 106 and a capacitance pattern 110. It can be seen that the plurality of dielectric resonators are in a linear cavity array topology, the suppression degree of the band-stop filter 100 is positively correlated with the length of the band-stop filter 100, and when the length of the band-stop filter 100 is limited, the suppression degree of a specified frequency band is limited.
Disclosure of Invention
In view of the above, the present application provides a band elimination filter, which can improve the suppression degree of the band elimination filter on a specified frequency band under the condition of a limited length.
A first aspect provides a band-stop filter comprising a resonant module and a dielectric substrate connected together; the resonance module comprises an input port, a first dielectric resonator, a second dielectric resonator, a first resonance unit and an output port, wherein the input port is coupled with the first dielectric resonator, the output port is coupled with the second dielectric resonator, a coupling pattern is arranged between the first dielectric resonator and the second dielectric resonator, the coupling pattern is arranged between one dielectric resonator in the first resonance unit and the first dielectric resonator, a transmission conductor is arranged inside a dielectric substrate, the input end of the transmission conductor is connected with the input port through a first conductive hole, and the output end of the transmission conductor is connected with the output port through a second conductive hole. The first resonance unit includes at least one dielectric resonator. The length of the transmission conductor may be, but is not limited to, a quarter wavelength. The transmission conductor is not coupled to the dielectric resonator of the first resonance unit.
In the above band elimination filter, one dielectric resonator in the first resonance unit is coupled to the first dielectric resonator, and the first dielectric resonator is coupled to the transmission conductor. Each dielectric resonator is in a resonant cavity, and the two resonant cavities form inter-cavity coupling. The plurality of resonant cavities with the inter-cavity coupling have higher suppression degree than a single resonant cavity, so the band-stop filter of the application has better suppression performance than the band-stop filter of two dielectric resonators. Under the condition that the band-stop filter and the band-stop filter with the linear type line cavities comprise the same number of dielectric resonators, the band-stop filter is shorter, occupies smaller area of a circuit board, and is more favorable for being arranged on the circuit board.
In one possible implementation, the first resonance unit includes one dielectric resonator, and the dielectric resonator of the first resonance unit is disposed above the first dielectric resonator. This provides an implementation of the first resonator element.
In another possible implementation manner, the first resonance unit includes one dielectric resonator, and the dielectric resonator of the first resonance unit is located at the same level and adjacent to the first dielectric resonator.
In another possible implementation manner, the first resonance unit includes a third dielectric resonator and a fourth dielectric resonator, a coupling pattern is disposed between the third dielectric resonator and the first dielectric resonator, and a coupling pattern is disposed between the fourth dielectric resonator and the third dielectric resonator. The resonant cavity where the first dielectric resonator is located is marked as a first resonant cavity, the resonant cavity where the third dielectric resonator is located is marked as a third resonant cavity, and the resonant cavity where the fourth dielectric resonator is located is marked as a fourth resonant cavity, so that the first resonant cavity is coupled with the third resonant cavity, and the third resonant cavity is coupled with the fourth resonant cavity, thereby realizing a three-layer resonant cavity, and providing another realization mode of the first resonant unit.
In another possible implementation manner, the band-stop filter further comprises a second resonance unit, and a coupling pattern is arranged between one dielectric resonator and the second dielectric resonator in the second resonance unit. The second resonator element comprises at least one dielectric resonator. When the second resonance unit includes a plurality of dielectric resonators, a coupling pattern is provided between adjacent dielectric resonators. Therefore, another multilayer row cavity can be formed, the resonance effect can be improved by utilizing the coupling among the multilayer row cavities, and the suppression degree of the specified frequency band is higher. The multi-layer cavity array refers to a multi-layer cavity array.
In another possible implementation manner, an isolation pattern is provided between the first resonance unit and the second resonance unit, and the isolation pattern is used for preventing the dielectric resonator in the first resonance unit from being coupled with the dielectric resonator in the second resonance unit. The isolation pattern is a metallization pattern capable of increasing isolation. In the band elimination filter, the first resonance unit and the second resonance unit are adjacent and not coupled, so that a compact resonance module is provided, and miniaturization of the band elimination filter is facilitated.
In another possible implementation manner, the transmission conductor is a curved transmission line, and a distance between an input end of the curved transmission line and an output end of the curved transmission line is smaller than a preset distance. The curved transmission line can be deployed in a shorter band-stop filter, and the stress of the curved transmission line is smaller than that of a linear transmission line, so that the service life is longer.
In another possible implementation, the dielectric substrate further includes at least one metal hole, and the metal hole is used for increasing the isolation between the input port and the output port. Optionally, all or part of the metal vias are disposed in the region surrounded by the curved transmission line.
In another possible implementation, the band reject filter further comprises a metallic shield cover connected to the front side of the resonator module. The metal shielding cover can reduce the resonance frequency and reduce the harmonic leakage of the resonance module.
In another possible implementation, the transmission conductor is a linear transmission line. This provides another transmission conductor.
In another possible implementation, each dielectric resonator in the resonance module includes a resonance aperture and a capacitance pattern connected to the resonance aperture. The resonant hole is a through hole formed in the dielectric body, and the axis of the resonant hole is parallel to the horizontal plane. The capacitor pattern may be a metal pattern equivalent to a capacitor.
In another possible implementation, each dielectric resonator in the resonance module is a TEM mode dielectric resonator, a TE mode dielectric resonator, or a TM mode dielectric resonator.
A second aspect provides a multi-stopband filter, which includes at least two bandstop filters, and an isolation unit is disposed between adjacent bandstop filters. The stopband of each bandstop filter is different from the stopbands of the other bandstop filters, so that multiple frequency bands can be suppressed. The band-stop filter is the band-stop filter in any implementation manner of the first aspect.
In one possible implementation, the isolation unit is an isolation pattern. The isolation pattern is a metallization pattern capable of improving isolation.
In another possible implementation, the isolation unit is an isolation hole. The isolation holes are metallized through holes, and the isolation degree between the band elimination filters around the isolation holes can be improved.
In another possible implementation, the isolation unit includes an isolation pattern and an isolation hole. This can further improve the isolation between the band-stop filters.
A third aspect provides an electronic device comprising the band-reject filter of any one of the implementations of the first aspect.
A fourth aspect provides an electronic device including the multiple stop band filter in any one of the implementations of the second aspect.
Drawings
Fig. 1 is a schematic structural diagram of a conventional band-stop filter;
FIG. 2 is a schematic circuit diagram of a prior art band stop filter;
FIG. 3 is a schematic structural diagram of a band stop filter in an embodiment of the present application;
FIG. 4a is a schematic diagram of another structure of a band-stop filter in the embodiment of the present application;
FIG. 4b is a schematic circuit diagram of a band stop filter in an embodiment of the present application;
FIG. 4c is a schematic diagram of another structure of the band-stop filter in the embodiment of the present application;
FIG. 5a is another schematic structural diagram of a band stop filter in the embodiment of the present application;
FIG. 5b is a schematic diagram of another structure of the band-stop filter in the embodiment of the present application;
FIG. 6 is a schematic diagram of another structure of a band-stop filter in the embodiment of the present application;
FIG. 7 is a schematic diagram of another structure of a band-stop filter in the embodiment of the present application;
FIG. 8 is a schematic view of a transmission conductor in an embodiment of the present application;
FIG. 9 is a schematic diagram of the rejection performance of a band stop filter in an embodiment of the present application;
fig. 10 is a schematic diagram of a multi-stop band filter according to an embodiment of the present application.
Detailed Description
The band-stop filter of the present application is applicable to electronic devices, which may be, but are not limited to, communication devices.
There are three forms of guided waves in a transmission line: transverse electromagnetic waves, transverse electric waves and transverse magnetic waves. The transmission mode of a transverse electromagnetic wave is the TEM mode, which is a waveguide mode without electric and magnetic field components in the propagation direction of the electromagnetic wave. The TE mode, which is a transmission mode of a transverse electric wave, is a waveguide mode having a magnetic field component but no electric field component in the propagation direction of an electromagnetic wave. The transmission mode of transverse magnetic waves is the TM mode. A waveguide mode having an electric field component but no magnetic field component in the propagation direction of the electromagnetic wave. Accordingly, the band-stop filters include a TE band-stop filter, a TM band-stop filter, and a TEM band-stop filter. The band-stop filter of the present application may be a TE band-stop filter, a TM band-stop filter, or a TEM band-stop filter.
For the band elimination filter with the linear type row cavities, the rejection degree of the band elimination filter is positively correlated with the number of the resonant cavities. The shorter the linear row of cavities, the lower the degree of suppression. The longer the linear row of chambers, the higher the degree of suppression. However, the area of the circuit board is limited, and therefore, the performance of the linear cavity-array band-stop filter is often difficult to meet the practical requirement under the limited length.
In view of the above problems, the present application provides a band-stop filter coupled between cavities, which can improve the rejection of the band-stop filter in a finite length. The band stop filter of the present application is described below:
referring to fig. 3, one embodiment of the band stop filter 300 of the present application includes:
a resonant module 301 and a dielectric substrate 302 connected;
the resonance module 301 includes a first dielectric resonator 303, a second dielectric resonator 304, a first resonance unit 305, an input port 307, and an output port 308;
the input port 307 is coupled to the first dielectric resonator 303, the output port 308 is coupled to the second dielectric resonator 304, and a coupling pattern 306 is provided between the first dielectric resonator 303 and the second dielectric resonator 304. The coupling pattern 306 between the first dielectric resonator 303 and the second dielectric resonator 304 may be disposed at a position close to the dielectric substrate 302 or may be disposed at a position far from the dielectric substrate 302.
The first resonance unit 305 includes at least one dielectric resonator, and a coupling pattern 306 is provided between one dielectric resonator in the first resonance unit 305 and the first dielectric resonator 303.
A transmission conductor 309 is provided inside the dielectric substrate 302, an input end 310 of the transmission conductor 309 is connected to the input port 307 through a first conductive via 312, and an output end 311 of the transmission conductor 309 is connected to the output port 308 through a second conductive via 313. The first conductive via 312 and the second conductive via 313 may be metalized vias.
In this embodiment, the base of the resonant module 301 is a dielectric. Alternatively, the dielectric body and the dielectric substrate 302 are fixedly attached by soldering. The dielectric constant of the dielectric body may be the same as or different from the dielectric constant of the dielectric substrate 302.
Each dielectric resonator in the resonance module 301 includes a resonance hole and a capacitance pattern connected to the resonance hole. The resonant frequency of the dielectric resonator is related to the size of the resonant hole and the size of the capacitive pattern. The material, shape and size of the capacitor pattern can be set according to actual conditions, and the application is not limited.
The resonant hole is a through hole formed in the dielectric body. Optionally, the axis of the resonant hole is parallel to the horizontal plane. The capacitor pattern connected to the resonance hole may be a metal pattern equivalent to a capacitor. Each dielectric resonator in the resonance module 301 is a TEM mode dielectric resonator, a TE mode dielectric resonator, or a TM mode dielectric resonator. It should be noted that the plurality of dielectric resonators of the resonance module 301 of the present application may be formed by processing a dielectric body by an integral molding process. Alternatively, the plurality of dielectric resonators of the resonance module 301 are independent, and the resonance module 301 is composed of a plurality of independent dielectric resonators, an input port and an output port.
The coupling pattern 306 may be a metallization pattern, which may be a metal strip or a metal line. The outer surface of the resonator module 301 is provided with a metallization and each coupling pattern 306 extends over the surface of the resonator module 301 such that the coupling patterns 306 are connected to the metallization.
The material, shape and size of the coupling pattern 306 can be set according to practical situations, and the application is not limited. For example, the coupling pattern 306 between the first resonator 303 and the second resonator 304 is a metal strip, and the length of the metal strip is determined according to a preset coupling degree, so that the length of the metal strip is determined to enable the coupling degree of the first resonator 303 and the second resonator 304 to be greater than the preset coupling degree, thereby achieving an ideal response.
It should be appreciated that the coupling pattern 306 may divide the resonant module 301 into a plurality of resonant cavities, one dielectric resonator within each resonant cavity. The coupling pattern 306 between the first dielectric resonator 303 and the second dielectric resonator 304, the coupling pattern 306 between the first dielectric resonator 303 and the first resonance unit 305, and the first dielectric resonator 303 may form a first resonance cavity. The coupling pattern 306 between the first dielectric resonator 303 and the second dielectric resonator 304 may form a second resonant cavity.
When the first resonance unit 305 includes one dielectric resonator, the coupling pattern 306 between the first dielectric resonator 303 and the first resonance unit 305 may form a third resonance cavity. Therefore, the first resonant cavity and the third resonant cavity form two layers of resonant cavities, the first resonant cavity and the third resonant cavity form inter-cavity coupling, and the two resonant cavities have higher suppression degree than a single resonant cavity.
In the case where the first resonance unit 305 includes a plurality of dielectric resonators, a coupling pattern 306 is provided between the adjacent dielectric resonators in the first resonance unit 305. Since each dielectric resonator is within one resonant cavity, multiple tiers of cavities can be formed. The intercavity coupling of the multiple layers of cavity rows can enable the signal passing through the transmission conductor 309 to approach or reach a transmission zero point in a specified frequency band, so that the rejection performance of the band-stop filter on the specified frequency band is excellent.
In this embodiment, the first dielectric resonator 303 and the second dielectric resonator 304 are coupled to the transmission conductor 309, and the other dielectric resonators are not coupled to the transmission conductor, and the band-stop filter is a multilayer cavity-array band-stop filter. The plurality of dielectric resonators having the intercavity coupling have a higher suppression degree than a single dielectric resonator, and therefore the band-stop filter of the present embodiment has a better suppression performance than a band-stop filter of two dielectric resonators.
In the case that the band-stop filter of the embodiment and the band-stop filter of the linear type cavity array comprise the same number of dielectric resonators, the band-stop filter of the embodiment is shorter, occupies a smaller area of a circuit board, and is more favorable for being deployed on the circuit board.
In the present application, the resonator a is coupled to the resonator B, which is understood to mean that the resonator a is coupled to the resonator B. The substrate of the resonant module is a dielectric body, and metallization treatment can be performed on the surface of the dielectric body, and then partial area of the surface of the dielectric body is subjected to demetalization, so that a capacitance pattern, a coupling pattern or an isolation pattern is formed in the rest area. The metallization process may be, but is not limited to, silver plating.
In the band reject filter 300, the first resonance unit 305 may include one or more dielectric resonators. The band stop filter with the different first resonator elements is described in detail below:
referring to fig. 4a, another embodiment of the band-stop filter of the present application includes:
a resonant module 301 and a dielectric substrate 302 connected;
the resonance module 301 includes a first dielectric resonator 303, a second dielectric resonator 304, a first resonance unit 305, an input port 307, and an output port 308;
the input port 307 is coupled to the first dielectric resonator 303, the output port 308 is coupled to the second dielectric resonator 304, and a coupling pattern 306 is provided between the first dielectric resonator 303 and the second dielectric resonator 304.
The first resonance unit 305 is a dielectric resonator 305, and a coupling pattern 306 is provided between the dielectric resonator 305 and the first dielectric resonator 303. The dielectric resonator 305 is located above the first dielectric resonator 303.
A transmission conductor 309 is provided inside the dielectric substrate 302, an input end 310 of the transmission conductor 309 is connected to the input port 307 through a first conductive via 312, and an output end 311 of the transmission conductor 309 is connected to the output port 308 through a second conductive via 313.
In this embodiment, the materials, structures and connection relationships of the dielectric substrate 302, the first dielectric resonator 303, the second dielectric resonator 304, the coupling pattern 306, the input port 307, the output port 308, the transmission conductor 309, the input end 310 of the transmission conductor 309, the output end 311 of the transmission conductor 309, the first conductive via 312 and the second conductive via 313 can be referred to above.
Fig. 4b is a circuit schematic of the band reject filter of fig. 4 a. Referring to fig. 4b, the input port 307 and the output port 308 are connected by a transmission conductor 309, the input port 307 is coupled to the first dielectric resonator 303, the output port 308 is coupled to the second dielectric resonator 304, the first dielectric resonator 303 is coupled to the second dielectric resonator 304, and the first dielectric resonator 303 is coupled to the dielectric resonator 305. In the circuit schematic of the present application, the dashed lines indicate coupling. In particular, the transmission conductor may be coupled to the dielectric resonator, or the dielectric resonator may be coupled to the dielectric resonator.
It can be seen that the input port 307 is coupled to the first dielectric resonator 303 and the resonant cell 305 is coupled to the first dielectric resonator 303. Thus, two layers of resonant cavities coupled between cavities can be formed, and the suppression degree of the specified frequency band can be improved.
Referring to fig. 4c, another embodiment of the band stop filter of the present application comprises:
a resonant module 301 and a dielectric substrate 302 connected;
the resonance module 301 includes a first dielectric resonator 303, a second dielectric resonator 304, a first resonance unit 305, an input port 307, and an output port 308;
the input port 307 is coupled to the first dielectric resonator 303, the output port 308 is coupled to the second dielectric resonator 304, and a coupling pattern 306 is provided between the first dielectric resonator 303 and the second dielectric resonator 304.
The first resonance unit 305 is a dielectric resonator 305, and a coupling pattern 306 is provided between the dielectric resonator 305 and the first dielectric resonator 303. The dielectric resonator 305 is at the same level and adjacent to the first dielectric resonator 303. It is to be understood that the dielectric resonator 305 may be located in front of, behind, to the left of, or to the right of the first dielectric resonator 303.
A transmission conductor 309 is provided inside the dielectric substrate 302, an input end 310 of the transmission conductor 309 is connected to the input port 307 through a first conductive via 312, and an output end 311 of the transmission conductor 309 is connected to the output port 308 through a second conductive via 313.
In this embodiment, the dielectric resonator 305 and the first dielectric resonator 303 are in the same horizontal plane, but the circuit diagram of the band elimination filter is the circuit diagram shown in fig. 4 b. This provides another type of intercavity coupled band stop filter.
The materials, structures, and connection relationships of the dielectric substrate 302, the first dielectric resonator 303, the second dielectric resonator 304, the coupling pattern 306, the input port 307, the output port 308, the transmission conductor 309, the input end 310 of the transmission conductor 309, the output end 311 of the transmission conductor 309, the first conductive via 312, and the second conductive via 313 can be referred to above.
In the band elimination filter shown in fig. 4a and 4c, the first resonance section 305 includes one dielectric resonator, which is coupled to the first dielectric resonator 303, and the positional relationship of the dielectric resonator and the first dielectric resonator 303 is not limited to the above example.
Referring now to fig. 5a, describing the case where the first resonator unit 305 includes two dielectric resonators, another embodiment of the band-stop filter of the present application includes:
a resonant module 301 and a dielectric substrate 302 connected;
the resonance module 301 includes a first dielectric resonator 303, a second dielectric resonator 304, a first resonance unit 305, an input port 307, and an output port 308;
the input port 307 is coupled to the first dielectric resonator 303, the output port 308 is coupled to the second dielectric resonator 304, and a coupling pattern 306 is provided between the first dielectric resonator 303 and the second dielectric resonator 304.
The first resonance unit 305 includes a third dielectric resonator 3051 and a fourth dielectric resonator 3052, a coupling pattern 306 is provided between the third dielectric resonator 3051 and the first dielectric resonator 303, and a coupling pattern 306 is provided between the fourth dielectric resonator 3052 and the third dielectric resonator 3051.
A transmission conductor 309 is provided inside the dielectric substrate 302, an input end 310 of the transmission conductor 309 is connected to the input port 307 through a first conductive via 312, and an output end 311 of the transmission conductor 309 is connected to the output port 308 through a second conductive via 313.
In this embodiment, the third dielectric resonator 3051 is provided above the first dielectric resonator 303, and the fourth dielectric resonator 3052 is provided above the third dielectric resonator 3051.
The dielectric substrate 302, the first dielectric resonator 303, the second dielectric resonator 304, the coupling pattern 306, the input port 307, the output port 308, the transfer conductor 309, the input terminal 310 of the transfer conductor 309, the output terminal 311 of the transfer conductor 309, the first conductive via 312, and the second conductive via 313 can be referred to the foregoing.
Referring to fig. 5b, another embodiment of the band-stop filter of the present application comprises:
a resonant module 301 and a dielectric substrate 302 connected;
the resonance module 301 includes a first dielectric resonator 303, a second dielectric resonator 304, a first resonance unit 305, an input port 307, and an output port 308;
the input port 307 is coupled to the first dielectric resonator 303, the output port 308 is coupled to the second dielectric resonator 304, and a coupling pattern 306 is provided between the first dielectric resonator 303 and the second dielectric resonator 304.
The first resonance unit 305 includes a third dielectric resonator 3051 and a fourth dielectric resonator 3052, a coupling pattern 306 is provided between the third dielectric resonator 3051 and the first dielectric resonator 303, and a coupling pattern 306 is provided between the fourth dielectric resonator 3052 and the third dielectric resonator 3051.
A transmission conductor 309 is provided inside the dielectric substrate 302, an input end 310 of the transmission conductor 309 is connected to the input port 307 through a first conductive via 312, and an output end 311 of the transmission conductor 309 is connected to the output port 308 through a second conductive via 313.
In this embodiment, the first dielectric resonator 303, the third dielectric resonator 3051, and the fourth dielectric resonator 3052 are located at the same level, the third dielectric resonator 3051 is adjacent to the first dielectric resonator 303, and the fourth dielectric resonator 3052 is adjacent to the third dielectric resonator 3051.
The dielectric substrate 302, the first dielectric resonator 303, the second dielectric resonator 304, the coupling pattern 306, the input port 307, the output port 308, the transmission conductor 309, the input terminal 310 of the transmission conductor 309, the output terminal 311 of the transmission conductor 309, the first conductive hole 312, and the second conductive hole 313 can be referred to the foregoing.
It should be understood that the first resonance unit may include more than three dielectric resonators, and the plurality of dielectric resonators of the first resonance unit may be arranged horizontally or longitudinally, which is not limited in this application.
In another example, the band-stop filter 300 further comprises a second resonating unit comprising at least one dielectric resonator, one dielectric resonator in the second resonating unit being coupled to the second dielectric resonator 304.
The first resonant unit and the second resonant unit may or may not be adjacent. First, a case where the resonator of the first resonance unit is not adjacent to the resonator of the second resonance unit will be described:
referring to fig. 6, another embodiment of the band-stop filter of the present application includes:
a resonant module 301 and a dielectric substrate 302 connected;
the resonance module 301 includes a first dielectric resonator 303, a second dielectric resonator 304, a first resonance unit 305, an input port 307, and an output port 308;
the input port 307 is coupled to the first dielectric resonator 303, the output port 308 is coupled to the second dielectric resonator 304, and a coupling pattern 306 is provided between the first dielectric resonator 303 and the second dielectric resonator 304.
The first resonance unit 305 is a dielectric resonator 305, and a coupling pattern 306 is provided between the dielectric resonator 305 and the first dielectric resonator 303. The dielectric resonator 305 is in the same horizontal plane and adjacent to the first dielectric resonator 303.
A transmission conductor 309 is provided inside the dielectric substrate 302, an input end 310 of the transmission conductor 309 is connected to the input port 307 through a first conductive via 312, and an output end 311 of the transmission conductor 309 is connected to the output port 308 through a second conductive via 313.
The second resonance means is a dielectric resonator 601, a coupling pattern 306 is provided between the dielectric resonator 601 and the second dielectric resonator 304, and the dielectric resonator 601 and the second dielectric resonator 304 are located on the same horizontal plane and adjacent to each other.
In this embodiment, the resonant cavity in which the first dielectric resonator 303 is located and the resonant cavity in which the dielectric resonator 305 is located are coupled, and the two resonant cavities may be regarded as a two-layer resonant cavity. Similarly, the resonant cavity of the second dielectric resonator 304 is coupled with the resonant cavity of the dielectric resonator 601, and the two resonant cavities can be regarded as another two-layer resonant cavity, so that the two-layer resonant cavities formed in this way have better suppression performance than one two-layer resonant cavity.
Next, the case where the first resonance unit is adjacent to the second resonance unit will be described:
referring to fig. 7, another embodiment of the band-stop filter of the present application includes:
a resonant module 301 and a dielectric substrate 302 connected;
the resonance module 301 includes a first dielectric resonator 303, a second dielectric resonator 304, a first resonance unit 305, an input port 307, and an output port 308;
the input port 307 is coupled to the first dielectric resonator 303, the output port 308 is coupled to the second dielectric resonator 304, and a coupling pattern 306 is provided between the first dielectric resonator 303 and the second dielectric resonator 304.
The first resonance unit 305 is a dielectric resonator 305, and a coupling pattern 306 is provided between the dielectric resonator 305 and the first dielectric resonator 303. The dielectric resonator 305 is disposed above the first dielectric resonator 303.
A transmission conductor 309 is provided inside the dielectric substrate 302, an input end 310 of the transmission conductor 309 is connected to the input port 307 through a first conductive via 312, and an output end 311 of the transmission conductor 309 is connected to the output port 308 through a second conductive via 313.
The second resonance unit is a dielectric resonator 701, the dielectric resonator 701 is disposed above the second dielectric resonator 304, and a coupling pattern 306 is disposed between the dielectric resonator 701 and the second dielectric resonator 304.
An isolation pattern 702 is provided between the dielectric resonator 305 and the dielectric resonator 701, and the isolation pattern 702 is used to increase the isolation between the dielectric resonator 305 and the dielectric resonator 701 so that the dielectric resonator 305 and the dielectric resonator 701 are not coupled to each other.
The isolation pattern 702 is a metallization pattern capable of improving isolation. The metallization pattern may be, but is not limited to, a metal strip or a metal line. The material, shape and size of the isolation pattern 702 may be set according to practical situations, and the application is not limited thereto.
In this embodiment, the resonant cavity of the first dielectric resonator 303 is coupled to the resonant cavity of the dielectric resonator 305, and the two resonant cavities can be regarded as a two-layer resonant cavity. Similarly, the resonant cavity of the second dielectric resonator 304 is coupled with the resonant cavity of the dielectric resonator 701, and the two resonant cavities are two-layer resonant cavities, so that the two-layer resonant cavities formed in this way have better suppression performance than one two-layer resonant cavity.
And secondly, the first resonance unit is adjacent to the second resonance unit, and an isolation pattern is arranged between the first resonance unit and the second resonance unit, so that the band elimination filter is simple and compact in structure and excellent in electrical property.
It should be understood that the first resonant unit and/or the second resonant unit may include more than three dielectric resonators, so that more than three layers of resonant cavities can be formed, thereby further improving the rejection performance of the band-stop filter. When the dielectric resonators in the first resonance unit and the second resonance unit are arranged longitudinally, the suppression performance can be improved without increasing the area occupied by the circuit board.
The transmission conductor 309 is described below:
in one example, the transmission conductor 309 is a curved transmission line, and a distance between the input end 307 of the curved transmission line and the output end 308 of the curved transmission line is less than a preset distance. The length of the transmission conductor 309 may be, but is not limited to, a quarter wavelength. The distance between the input end of the curved transmission line and the output end of the curved transmission line may be set to be much less than a quarter wavelength. The band-stop filter with curved transmission lines has a shorter length, a smaller band-stop filter can be manufactured, and the curved transmission lines have less stress than the straight transmission lines, and thus have a longer service life, as compared to the band-stop filter with straight transmission lines. Optionally, the dielectric substrate 302 further includes at least one metal hole, and the metal hole is used to increase the isolation between the input port and the output port. Optionally, the metal aperture is disposed in a region surrounded by the curved transmission line.
Referring to fig. 8, in one example, an input terminal 310 of a curved transmission line is connected to a first conductive via 312 and an output terminal 311 of the curved transmission line is connected to a second conductive via 313. In the area enclosed by the curved transmission line, 7 metal holes 801 are provided. It should be understood that the number of the metal holes 801 is not limited to 7, and the number of the metal holes is not limited in the present application. The metal holes 801 may be metalized vias. It should be understood that the shape and length of the curved transmission line can be set according to practical situations, and the application is not limited thereto. The location of the metal vias is also not limited to the area enclosed by the curved transmission lines.
The rejection performance of the band-stop filter shown in fig. 7 will be described below by taking as an example that the band-stop filter has a curved transmission line. Referring to fig. 9, the abscissa is frequency in gigahertz (GHz). The ordinate is the degree of inhibition in decibels. S11 is the input reflection coefficient curve and S12 is the inverse transmission coefficient curve. As can be seen from fig. 9, for the frequency band from 1.89GHz to 1.92GHz, S12 can reach-20 decibel (dB) or less, which indicates that the band-stop filter can perform good suppression on the frequency band from 1.89GHz to 1.92GHz, and has a wider return bandwidth and less loss.
The suppression degrees at sampling point m3 and sampling point m1 in this frequency interval are shown in table 1:
sampling point Frequency (GHz) Inhibiting system (dB)
m1 1.9155 -32.0845
m3 1.8950 -34.3408
TABLE 1
In another example, the transmission conductor 309 is a straight transmission line. Specifically, the transmission conductor 309 may also be a silver wire, a copper wire, or a microstrip line. The shape and material of the transmission conductor 309 are not limited to the above examples, and the present application is not limited thereto.
In another example, the band stop filter 300 further comprises a metallic shielding cover connected to the front side of the resonator module 301. The metal shield cover may cover the resonance holes of the respective dielectric resonators in the resonance module 301 to reduce the leakage of harmonics, and the resonance frequency may be lowered.
The present application also provides an electronic device comprising a band-stop filter in any one or an alternative embodiment shown in fig. 3, fig. 4a, fig. 4c, fig. 5a, fig. 5b, fig. 6 or fig. 7 of the present application.
Referring to fig. 10, an embodiment of the multi-stop band filter of the present application includes:
a first band-stop filter 1001 and a second band-stop filter 1002, the stopband of the first band-stop filter 1001 being different from the stopband of the second band-stop filter 1002;
an isolation unit is arranged between the first band stop filter 1001 and the second band stop filter 1002, and the isolation unit comprises an isolation pattern 1003 and an isolation hole 1004.
The isolation pattern 1003 is a metallization pattern capable of improving isolation. The isolation holes 1004 may be, but are not limited to, metalized vias. Both the isolation pattern 1003 and the isolation hole 1004 may improve the isolation between the first band stop filter 1001 and the second band stop filter 1002.
It should be understood that the first band-stop filter 1001 and the second band-stop filter 1002 may be integrally formed or may be independent. The number of band-stop filters in the multi-stop band filter is not limited to two, and the number of band-stop filters and the stop band can be set according to actual conditions. Stopband refers to the frequency band that is rejected by the band reject filter.
In another example of the multi-stop band filter, the isolation unit may be an isolation pattern. The material, shape and size of the isolation pattern can be set according to actual conditions, and the application is not limited.
In another example of the multi-stop band filter, the isolation unit may be an isolation hole.
The present application also provides an electronic device including the multiple stop band filter in the embodiment or the alternative embodiment shown in fig. 10.
The above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims (14)

1. A band stop filter, comprising:
the resonant module and the dielectric substrate are connected;
the resonance module comprises an input port, a first dielectric resonator, a second dielectric resonator, a first resonance unit and an output port;
the input port is coupled with the first dielectric resonator, the output port is coupled with the second dielectric resonator, and a coupling pattern is arranged between the first dielectric resonator and the second dielectric resonator;
the first resonance unit comprises at least one dielectric resonator, and a coupling pattern is arranged between one dielectric resonator in the first resonance unit and the first dielectric resonator;
a transmission conductor is arranged in the dielectric substrate, the input end of the transmission conductor is connected with the input port through a first conductive hole, the output end of the transmission conductor is connected with the output port through a second conductive hole, the first dielectric resonator and the second dielectric resonator are coupled with the transmission conductor, and other dielectric resonators are not coupled with the transmission conductor.
2. The band reject filter of claim 1, wherein the first resonator unit comprises one dielectric resonator, the dielectric resonator of the first resonator unit being disposed above the first dielectric resonator.
3. The band-stop filter of claim 1, wherein the first resonating unit comprises one dielectric resonator, and the dielectric resonator of the first resonating unit is at the same level and adjacent to the first dielectric resonator.
4. The band-stop filter of claim 1, wherein the first resonant unit comprises a third dielectric resonator and a fourth dielectric resonator, a coupling pattern is arranged between the third dielectric resonator and the first dielectric resonator, and a coupling pattern is arranged between the fourth dielectric resonator and the third dielectric resonator.
5. The band reject filter according to claim 1, characterized in that the band reject filter further comprises a second resonator unit comprising at least one dielectric resonator, a coupling pattern being provided between one of the dielectric resonators and the second dielectric resonator in the second resonator unit.
6. The band-stop filter of claim 5,
an isolation pattern is arranged between the first resonance unit and the second resonance unit, and the isolation pattern is used for preventing the dielectric resonator in the first resonance unit from being coupled with the dielectric resonator in the second resonance unit.
7. The band reject filter of any one of claims 1 to 6, wherein the transmission conductor is a curved transmission line, and wherein a distance between an input end of the curved transmission line and an output end of the curved transmission line is less than a preset distance.
8. The band-stop filter of claim 7, wherein the dielectric substrate further comprises at least one metal hole for increasing isolation between the input port and the output port.
9. The band reject filter according to any one of claims 1 to 6, characterized in that the band reject filter further comprises a metallic shielding cover connected with a front face of the resonance module.
10. A multi-stop band filter, comprising:
at least two band-stop filters, the band-stop filters of any one of claims 1 to 9;
and an isolation unit is arranged between the adjacent band elimination filters.
11. The multi-stop band filter of claim 10, wherein the isolation unit is an isolation pattern.
12. The multi-stop band filter of claim 10, wherein the isolation unit comprises an isolation pattern and an isolation hole.
13. An electronic device, comprising:
the band reject filter of any one of claims 1 to 9.
14. An electronic device, comprising:
the multi-stop band filter of any one of claims 10 to 12.
CN202110132027.6A 2021-01-30 2021-01-30 Band-stop filter and multi-stop band filter Active CN114843723B (en)

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CN1234624A (en) * 1998-04-30 1999-11-10 株式会社村田制作所 Medium wave filber, receiving-sending shared device and communication apparatus
CN101719579A (en) * 2009-12-30 2010-06-02 西安空间无线电技术研究所 Multi-band bandstop filter and multi-band bandpass filter
CN108475836A (en) * 2015-12-24 2018-08-31 华为技术有限公司 A kind of filter and Wireless Communication Equipment
CN110459843A (en) * 2019-08-22 2019-11-15 深圳市国人射频通信有限公司 A kind of dielectric waveguide filter
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