CN210380786U - Miniature multilayer ceramic band-pass filter - Google Patents
Miniature multilayer ceramic band-pass filter Download PDFInfo
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Abstract
The utility model provides a miniature multilayer ceramic band pass filter, including central stack and locate the filter circuit in the central stack, the central stack includes a plurality of top-down superpose bearing unit, every bearing unit is laminated by multilayer medium base plate top-down and is constituted, filter circuit includes at least 4 first transmission zero structure and at least 4 second transmission zero structure that concatenate in proper order, every first transmission zero structure produces a transmission zero in the stop band of passband top, every second transmission zero structure produces a transmission zero in the stop band of passband below; and the at least one first transmission zero structure and the at least one second transmission zero structure are respectively used as a distribution unit, and each distribution unit is arranged on one bearing unit. The utility model discloses can produce 4 at least transmission zero points in the stop band of passband top, produce 4 at least transmission zero points in the stop band of passband below, not only the performance is excellent, but also can guarantee very little size.
Description
Technical Field
The utility model relates to a band pass filter, concretely relates to miniature multilayer ceramic band pass filter.
Background
Bandpass filters are important passive components of radio frequency systems. A good bandpass filter should have low in-band loss, deep out-of-band rejection, wide stop-band rejection range, and also need to have as small a volume as possible. The traditional band-pass filter mostly adopts a plane structure, occupies a large area, cannot meet the miniaturization requirement of a radio frequency front end, and is difficult to integrate.
In order to make the outside of the passband be greatly suppressed in the actually designed bandpass filter, transmission zero needs to be introduced at some specific frequency points, and the transmission zero means that the filter transmission function is equal to zero, that is, theoretically, the energy at this frequency point cannot pass through the network, so that the filter plays a role of complete isolation, but because there are electromagnetic radiation and electromagnetic leakage in the actual situation, a small amount of energy still passes through the network. However, the conventional bandpass filter usually has a small number of transmission zeros, usually no more than about 6 transmission zeros (i.e., no more than 3 transmission zeros are generated in the stop band above the passband, and no more than 3 transmission zeros are generated in the stop band below the passband), and although good performance can be achieved, the conventional structure still cannot meet the requirements when meeting more stringent performance requirements. Although the higher the number of transmission zeros, the faster the out-of-band attenuation of the filter, the higher the transmission zeros, which results in an increased number of circuit elements and hence a higher space occupation, now requires a small volume, which presents a contradiction between a large number of circuit elements and a limited space.
In order to meet the requirements of miniaturization and high performance of the device, the traditional method adopts a dielectric material with high dielectric constant and low loss from the beginning of the material, so that the volume of the device is reduced and the performance of the device is improved. However, in the conventional method, the coupling inside the device increases along with the increase of the dielectric constant, and after the internal coupling increases to a certain degree, the performance of the device is negatively affected; after the dielectric loss is reduced to a certain degree, the conductor loss and the radiation loss become main factors influencing the device loss. Therefore, the problem that miniaturization and high performance of the device are required at present cannot be solved only by starting from materials, and a corresponding solution is sought from the viewpoint of circuit design.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model lies in providing a miniature multilayer ceramic band pass filter, can produce 4 at least transmission zero points in the stop band of passband top, produces 4 at least transmission zero points in the stop band of passband below, but also can guarantee very little size.
The utility model discloses a realize like this: a miniature multilayer ceramic band-pass filter comprises a central laminated body and a filter circuit arranged in the central laminated body, wherein the central laminated body comprises a plurality of bearing units which are stacked from top to bottom, each bearing unit is formed by stacking a plurality of dielectric substrates from top to bottom, adjacent dielectric substrates are mutually connected and conducted through a conduction band and a through hole, and the surface of the central laminated body is provided with a first input and output end and a second input and output end;
the filter circuit comprises at least 4 first transmission zero structures which are sequentially connected in series and at least 4 second transmission zero structures which are sequentially connected in series, the tail end of the first transmission zero structure after being connected in series is connected with the head end of the second transmission zero structure after being connected in series, the first transmission zero structure at the head end is connected with the first input/output end, and the second transmission zero structure at the tail end is connected with the second input/output end; each first transmission zero structure generates a transmission zero in the stop band above the passband, and each second transmission zero structure generates a transmission zero in the stop band below the passband;
and the at least one first transmission zero structure and the at least one second transmission zero structure are respectively used as a distribution unit, and each distribution unit is arranged on one bearing unit.
The utility model has the advantages of as follows:
1. the utility model discloses the filter circuit of wave filter includes at least 4 first transmission zero structures that concatenate in proper order and at least 4 second transmission zero structures that concatenate in proper order, can produce at least 4 transmission zeros in the stop band above the passband, produces at least 4 transmission zeros in the stop band below the passband, thereby make the wave filter can realize being less than 3.5 dB's insertion loss in 3.17GHz ~ 4.22 GHz; out-of-band rejection of about 35dB or more can be realized in the frequency range of 0.1 GHz-2.77GHz and the frequency range of 4.8 GHz-10 GHz; the in-band insertion loss at the center frequency of 3.7GHz is less than 2.3 dB. Defining the squareness ratio of the filter as 35dB bandwidth divided by 3.5dB bandwidth, it can be seen that the squareness ratio of the filter is (4.8GHz-2.77GHz)/(4.22GHz-3.17GHz) ═ 1.93, and it can be seen from calculation that the squareness ratio of the filter is less than 2.
2. The central laminated body of the filter of the utility model is divided into a plurality of bearing units which are laminated from top to bottom, each bearing unit is formed by laminating a plurality of layers of dielectric substrates from top to bottom, at least one first transmission zero structure and at least one second transmission zero structure are respectively used as an arrangement unit, each arrangement unit is arranged on one bearing unit, so that the whole product can extend in thickness to reduce the length and the width to the maximum extent, thereby maintaining the high performance characteristics of low insertion loss, high inhibition, rapid attenuation and the like, and simultaneously having the characteristic of small size, the length is only 3.2mm, the width is only 2.5mm, the thickness direction of the product is different according to the different number of the used dielectric layers or the thickness of the single-layer dielectric, typical thicknesses may vary from 1.0mm to 3.0mm, and in extreme cases may be thinner than 1.0mm or thicker than 3.0 mm. Can be processed into a patch form, and is convenient to integrate in a microwave system. It can be said that the requirements of high performance and miniaturization are both considered.
Drawings
The invention will be further described with reference to the following examples with reference to the accompanying drawings.
Fig. 1 is a schematic diagram of the overall structure of a first embodiment of the micro multilayer ceramic bandpass filter of the present invention, wherein C4 and L4 are in a folded state.
Fig. 2 is an exploded view of the center laminate of the embodiment of fig. 1.
Fig. 3 is a schematic diagram of an equivalent filter circuit of the embodiment of fig. 1.
Fig. 4 is a schematic diagram of the overall structure of the second embodiment of the micro multilayer ceramic bandpass filter of the present invention, wherein C4 and L4 are in a direct connection state.
Fig. 5 is an exploded view of the center laminate of the embodiment of fig. 1.
Fig. 6 is a schematic diagram of an equivalent filter circuit of the embodiment of fig. 4.
Fig. 7 is a schematic view of the directions of the input end surfaces of the present invention in the folded states of C4 and L4.
FIG. 8 is a schematic of the 1/2 rectangle and 3/4 rectangle.
Fig. 9 shows actual test data of the filter according to the present invention.
Detailed Description
The utility model discloses a miniature multilayer ceramic band pass filter, including central stack and locate the filter circuit in the central stack, the central stack includes a plurality of bearing units that top-down superpose, and every bearing unit is laminated by multilayer medium base plate top-down and constitutes, and adjacent medium base plate links to each other through conduction band and via hole and switches on each other, the surface of central stack is equipped with first input/output end and second input/output end;
the filter circuit comprises at least 4 first transmission zero structures which are sequentially connected in series and at least 4 second transmission zero structures which are sequentially connected in series, the tail end of the first transmission zero structure after being connected in series is connected with the head end of the second transmission zero structure after being connected in series, the first transmission zero structure at the head end is connected with the first input/output end, and the second transmission zero structure at the tail end is connected with the second input/output end; each first transmission zero structure generates a transmission zero in the stop band above the passband, and each second transmission zero structure generates a transmission zero in the stop band below the passband;
and the at least one first transmission zero structure and the at least one second transmission zero structure are respectively used as a distribution unit, and each distribution unit is arranged on one bearing unit.
Wherein, the first transmission zero structure that is not located at the end is realized by adopting a direct connection structure, namely: the input end surfaces of the first transmission zero structure which are not positioned at the tail end are positioned on the same side with the first input and output end, and the input end surfaces are positioned on the opposite side with the first input and output end;
however, in order to shorten the length of the conduction band connecting the first transmission zero structure at the tail end with the head end of the second transmission zero structure, the first transmission zero structure at the tail end may be implemented by adopting a folded structure, that is: the input end face of the first transmission zero structure positioned at the tail end is positioned on the opposite side of the first input and output end, and the input end face is positioned on the same side of the first input and output end.
In the present invention, the first transmission zero structure may be only an inductor L, or a parallel structure of an inductor L and a capacitor C, and similarly, the second transmission zero structure may be only a capacitor C; or a parallel structure of an inductor L and a capacitor C.
According to specific requirements, two adjacent first transmission zero structures are grounded through a capacitor C; the front end of any one of the second transmission zero structures is grounded through an inductor L. The first transmission zero structure or the second transmission zero structure is a parallel resonator on a circuit, and the first transmission zero structure or the second transmission zero structure is grounded through a capacitor C or an inductor L and can be used for matching among the parallel resonators.
The utility model discloses still can include two ground connection curb plates, two the ground connection curb plate is located the side of center stack, a ground plane has at least in the medium base plate, and this ground connection is connected the ground connection curb plate.
The utility model can also comprise a longitudinal shielding structure which is arranged inside the central laminated body and is connected with the grounding layer; an end face blank substrate layer is arranged above the central laminated body and is composed of at least one blank multilayer medium substrate; the longitudinal shielding structure is arranged between the two end face blank substrate layers. One characteristic of the longitudinal shielding structure is that the uppermost layer and the lowermost layer are not exposed outside the filter, and the other characteristic is that the longitudinal shielding structure is arranged between the input and output electrodes and the internal circuit of the filter, thereby effectively preventing the input and output electrodes from generating unnecessary influence on the internal circuit of the filter and ensuring the performance of the filter.
A gap blank substrate layer is arranged between the two bearing units, and any gap blank substrate layer is composed of at least one blank multilayer medium substrate.
In particular, the invention is further described below with reference to the following examples with reference to the accompanying drawings:
example one
With reference to fig. 1 to 3, the micro multilayer ceramic band pass filter of the present embodiment includes a central laminated body 100 and a filter circuit 200 disposed in the central laminated body, where the central laminated body 100 includes a plurality of bearing units stacked from top to bottom, each bearing unit is formed by stacking a plurality of dielectric substrates from top to bottom, adjacent dielectric substrates are connected and conducted with each other through a conduction band 300 and a via hole 400, and a first input/output end S1 and a second input/output end S3 are disposed on a surface of the central laminated body 100; two grounding side plates S2 and S4 are further included, and two grounding side plates S2 and S4 are located at the side of the central laminated body 100.
In this embodiment, in the filter circuit, the number of the first transmission zero structures and the number of the second transmission zero structures are respectively 4; the first transmission zero structure is a parallel structure of an inductor L and a capacitor C, and the second transmission zero structure is a parallel structure of an inductor L and a capacitor C.
The 4 first transmission zero structures are respectively a parallel structure of L1 and C1, a parallel structure of L2 and C2, a parallel structure of L3 and C3, and a parallel structure of L4 and C4; the parallel structure of L1 and C1 and the parallel structure of L2 and C2 are grounded through C5, the parallel structure of L2 and C2 and the parallel structure of L3 and C3 are grounded through C6, and the parallel structure of L3 and C3 and the parallel structure of L4 and C4 are grounded through C7;
the 4 second transmission zero structures are respectively a parallel structure of L5 and C8, a parallel structure of L6 and C9, a parallel structure of L7 and C10, and a parallel structure of L8 and C11; the front end of the parallel structure of L5 and C8 is grounded through L9, the front end of the parallel structure of L6 and C9 is grounded through L10, the front end of the parallel structure of L7 and C10 is grounded through L11, and the front end of the parallel structure of L8 and C11 is grounded through L12;
the central laminated body sequentially comprises a first grounding layer D1, a first spacing blank substrate layer K1, a first bearing unit Z1, a second spacing blank substrate layer K2, a second bearing unit Z2, a third spacing blank substrate layer K3, a third bearing unit Z3 and a third grounding layer D3; the first and third ground layers D1 and D3 are connected to the ground side plates S2 and S4.
The upper part of the central laminated body also comprises an end face blank substrate layer M which is formed by laminating three layers of blank dielectric substrates.
The first bearing unit Z1 is provided with 3 first transmission zero structures, and the 3 first transmission zero structures are an arrangement unit; the first bearing unit is composed of 1 st to 4 th layers of dielectric substrates, the 1 st and 2 nd layers of dielectric substrates are provided with L1, L2 and L3, the 3 rd and 4 th layers of dielectric substrates are provided with C1, C2 and C3, the 1 st layer of dielectric substrate is also provided with C5 and C6, the 2 nd layer of dielectric substrate is also provided with C7, and C1 and L1 are connected with a first input/output end S1;
the second bearing unit Z2 is provided with 1 first transmission zero structure, and the 1 first transmission zero structure is a distribution unit; the second bearing unit is composed of 5 th to 8 th layers of dielectric substrates, L4 is manufactured on the 5 th and 6 th layers of dielectric substrates, C4 is manufactured on the 7 th and 8 th layers of dielectric substrates, and a horizontal shielding structure P1 is manufactured on the 6 th layer of dielectric substrate;
the third carrying unit Z3 is provided with 4 second transmission zero structures, where the 4 second transmission zero structures are an arrangement unit, that is, the third carrying unit is composed of 9 th to 18 th layers of dielectric substrates, the 9 th layer of dielectric substrate is also a second ground layer D2, the 10 th and 11 th layers of dielectric substrates are manufactured with L9, L10, L11, and L12, the 12 th to 16 th layers of dielectric substrates are manufactured with L5, L6, L7, and L8, the 17 th and 18 th layers of dielectric substrates are manufactured with C8, C9, C10, and C11, where L8 and C11 are connected to a second input/output terminal S3.
The 6 th and 9 th layer dielectric substrates are also connected with grounding terminals S2 and S4.
The 6 th to 18 th dielectric substrates and the third ground layer D3 form a longitudinal shielding structure P2 in the shielding structure by means of through holes.
It should be noted that: in this embodiment, the input end surface a4 of the first transmission zero structure at the end, i.e., the parallel structure of L4 and C4, is located at the opposite side of the first input/output end S1, i.e., the input end surface a4 and the first input/output end S1 are located at the left and right sides of the parallel structure of L4 and C4, respectively, and the output end surface b4 is located at the same side of the first input/output end S1, i.e., both located at the left side of the parallel structure of L4 and C4. This can greatly shorten the length of the connection line between the parallel structure of L4 and C4 and the parallel structure of L5 and C8.
Example two
As shown in fig. 4 to 7, the present embodiment is different from the first embodiment only in that: the first transmission zero structure at the tail end is the same as the other 3 first transmission zero structures at the front end, and the first transmission zero structure is realized by adopting a common connecting structure, namely a direct connection structure:
namely, the parallel structure of L4 and C4, its input end face a4 is the same as the input and output ends a1, a2 and a3 of the other 3 first transmission zero structures, and is located on the same side of the first input and output end S1, that is, on the left side of the parallel structure of L4 and C4, and its output end face b4 is located on the left and right sides of the parallel structure of L4 and C4 as the first input and output end S1. Such a straightforward structure is not compact enough compared to a folded structure, and when the parallel structures of L5 and C8 are connected from the parallel structure of L4 and C4 through the metal conduction band 300, the metal conduction band 300 required is long, thereby affecting the convenience of the connection operation of the reliability of the connection to some extent.
As shown in fig. 5, all the first transmission zero structures adopt a direct connection structure, so that a parallel connection structure of L4 and C4 can be provided in the first carrier unit Z1, but in order to satisfy the requirement of sufficient space for disposing the metal conduction band 300, the second spaced blank substrate layer K2 between the first carrier unit Z1 and the second carrier unit Z2 can be formed by multiple layers of space substrates, or a wiring layer T1 is provided for the convenience of wiring. In addition, fig. 5 is only intended to show the difference between the unfolded structure and the folded structure, and thus the whole structure is not necessarily required, for example, the longitudinal shielding structure P2 and the horizontal shielding structure P1 are omitted, and a part of the ground layer is also omitted.
As shown in fig. 8, in the above embodiment, all the inductors L are spiral inductors, for example, the inductors L1, L2, L3, L4, L5, L6, L7, L8, L9, L10, L11, and L12 are spiral inductors, each layer of each spiral inductor is a rectangle 1/2 (see left drawing of fig. 8) or 3/4 (see right drawing of fig. 8) wound by a metal conduction band 300 with a width of 0.1mm, and when conducting, the metal conduction bands 300 of adjacent layers are connected through vias. In fig. 2 and 5, the vertical thick black line is the metal conduction band 300, except for the vertical thick black line in the portion representing the longitudinal shielding structure P2 in fig. 2.
As shown in fig. 9, the above embodiment can achieve an insertion loss of less than 3.5dB in the range of 3.17GHz to 4.22 GHz; out-of-band rejection of about 35dB or more can be realized in the frequency range of 0.1 GHz-2.77GHz and the frequency range of 4.8 GHz-10 GHz; the in-band insertion loss at the center frequency of 3.7GHz is less than 2.3 dB. Defining the squareness ratio of the filter as 35dB bandwidth divided by 3.5dB bandwidth, it can be seen that the squareness ratio of the filter is (4.8GHz-2.77GHz)/(4.22GHz-3.17GHz) ═ 1.93, and it can be seen from calculation that the squareness ratio of the filter is less than 2. Therefore, the low in-band insertion loss is realized, and the advantages of fast attenuation of a stop band and broadband suppression are also realized.
Although specific embodiments of the present invention have been described, it will be understood by those skilled in the art that the specific embodiments described are illustrative only and are not limiting upon the scope of the invention, and that equivalent modifications and variations can be made by those skilled in the art without departing from the spirit of the invention, which is to be limited only by the claims appended hereto.
Claims (10)
1. A miniature multilayer ceramic bandpass filter characterized by: the filter circuit comprises a central laminated body and a filter circuit arranged in the central laminated body, wherein the central laminated body comprises a plurality of bearing units which are stacked from top to bottom, each bearing unit is formed by stacking a plurality of layers of dielectric substrates from top to bottom, adjacent dielectric substrates are mutually connected and conducted through a conduction band and a through hole, and the surface of the central laminated body is provided with a first input and output end and a second input and output end;
the filter circuit comprises at least 4 first transmission zero structures which are sequentially connected in series and at least 4 second transmission zero structures which are sequentially connected in series, the tail end of the first transmission zero structure after being connected in series is connected with the head end of the second transmission zero structure after being connected in series, the first transmission zero structure at the head end is connected with the first input/output end, and the second transmission zero structure at the tail end is connected with the second input/output end; each first transmission zero structure generates a transmission zero in the stop band above the passband, and each second transmission zero structure generates a transmission zero in the stop band below the passband;
and the at least one first transmission zero structure and the at least one second transmission zero structure are respectively used as a distribution unit, and each distribution unit is arranged on one bearing unit.
2. The micro multilayer ceramic bandpass filter according to claim 1, wherein:
the first transmission zero structure which is not positioned at the tail end is realized by adopting a direct connection structure, namely: the input end surfaces of the first transmission zero structure which are not positioned at the tail end are positioned on the same side with the first input and output end, and the input end surfaces are positioned on the opposite side with the first input and output end;
the first transmission zero structure at the tail end is realized by adopting a folding structure, namely: the input end face of the first transmission zero structure positioned at the tail end is positioned on the opposite side of the first input and output end, and the input end face is positioned on the same side of the first input and output end.
3. The micro multilayer ceramic bandpass filter according to claim 1, wherein:
the first transmission zero structure is only an inductor L or a parallel structure of the inductor L and a capacitor C;
the second transmission zero structure is only a capacitor C; or a parallel structure of an inductor L and a capacitor C.
4. The micro multilayer ceramic bandpass filter according to claim 1, wherein: two adjacent first transmission zero structures are grounded through a capacitor C; the front end of any one of the second transmission zero structures is grounded through an inductor L.
5. A miniature multilayer ceramic bandpass filter according to claim 3, wherein: the inductor L is a spiral inductor, each layer of which is formed by winding 1/2 or 3/4 rectangles of metal conducting strips with a width of 0.1 mm.
6. The micro multilayer ceramic bandpass filter according to claim 1, wherein: the dielectric substrate is provided with at least one grounding layer, and the grounding layer is connected with the grounding side plates.
7. The micro multilayer ceramic bandpass filter according to claim 6, wherein: the longitudinal shielding structure is arranged inside the central laminated body and is connected with the grounding layer; an end face blank substrate layer is arranged above the central laminated body and is composed of at least one blank multilayer medium substrate; the longitudinal shielding structure is arranged between the two end face blank substrate layers.
8. The micro multilayer ceramic bandpass filter according to claim 1, wherein: a gap blank substrate layer is arranged between the two bearing units, and any gap blank substrate layer is composed of at least one blank multilayer medium substrate.
9. The micro multilayer ceramic bandpass filter according to claim 1, wherein:
the number of the first transmission zero point structures and the number of the second transmission zero point structures are respectively 4;
the central laminated body sequentially comprises a first grounding layer, a first spacing blank substrate layer, a first bearing unit, a second spacing blank substrate layer, a second bearing unit, a third spacing blank substrate layer, a third bearing unit and a third grounding layer;
the first bearing unit is provided with 3 first transmission zero structures;
the second bearing unit is provided with 1 first transmission zero structure;
the third bearing unit is provided with 4 second transmission zero structures.
10. The micro multilayer ceramic bandpass filter according to claim 9, wherein:
the 4 first transmission zero structures are all parallel structures of an inductor L and a capacitor C, and are respectively parallel structures of L1 and C1, parallel structures of L2 and C2, parallel structures of L3 and C3 and parallel structures of L4 and C4; the parallel structure of L1 and C1 and the parallel structure of L2 and C2 are grounded through C5, the parallel structure of L2 and C2 and the parallel structure of L3 and C3 are grounded through C6, and the parallel structure of L3 and C3 and the parallel structure of L4 and C4 are grounded through C7;
the 4 second transmission zero structures are all parallel structures of an inductor L and a capacitor C, and are respectively parallel structures of L5 and C8, parallel structures of L6 and C9, parallel structures of L7 and C10 and parallel structures of L8 and C11; the front end of the parallel structure of L5 and C8 is grounded through L9, the front end of the parallel structure of L6 and C9 is grounded through L10, the front end of the parallel structure of L7 and C10 is grounded through L11, and the front end of the parallel structure of L8 and C11 is grounded through L12;
the first bearing unit is composed of 1 st to 4 th layers of dielectric substrates, the 1 st and 2 nd layers of dielectric substrates are provided with L1, L2 and L3, the 3 rd and 4 th layers of dielectric substrates are provided with C1, C2 and C3, the 1 st layer of dielectric substrate is also provided with C5 and C6, the 2 nd layer of dielectric substrate is also provided with C7, and C1 and L1 are connected with a first input/output end S1;
the second bearing unit is composed of 5 th to 8 th layers of dielectric substrates, L4 is manufactured on the 5 th and 6 th layers of dielectric substrates, C4 is manufactured on the 7 th and 8 th layers of dielectric substrates, and a horizontal shielding structure is manufactured on the 6 th layer of dielectric substrate;
the third bearing unit is composed of 9 th to 18 th layers of dielectric substrates, the 9 th layer of dielectric substrate is a ground layer, the 10 th and 11 th layers of dielectric substrates are provided with L9, L10, L11 and L12, the 12 th to 16 th layers of dielectric substrates are provided with L5, L6, L7 and L8, the 17 th and 18 th layers of dielectric substrates are provided with C8, C9, C10 and C11, and the L8 and C11 are connected with the second input and output ends.
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Denomination of utility model: A micro multilayer ceramic bandpass filter Effective date of registration: 20220705 Granted publication date: 20200421 Pledgee: Agricultural Bank of China Limited Ganzhou Development Zone sub branch Pledgor: YANCHUANG PHOTOELECTRIC TECHNOLOGY (GANZHOU) Co.,Ltd. Registration number: Y2022980009837 |
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Address after: 341003 Industrial Park, Ganzhou economic and Technological Development Zone, Ganzhou City, Jiangxi Province Patentee after: Ganzhou Yanchuang Electronic Technology Co.,Ltd. Address before: 341003 Industrial Park, Ganzhou economic and Technological Development Zone, Ganzhou City, Jiangxi Province Patentee before: YANCHUANG PHOTOELECTRIC TECHNOLOGY (GANZHOU) Co.,Ltd. |