CN109802216B - Broadband miniaturized Wilkinson power divider based on thin film integrated passive device process and preparation method thereof - Google Patents
Broadband miniaturized Wilkinson power divider based on thin film integrated passive device process and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a broadband miniaturized Wilkinson power divider based on a thin film integrated passive device process and a preparation method thereof, belongs to the field of microwave devices, and aims to solve the problems of large size and low device reliability of the Wilkinson power divider with a conventional planar cascade structure. The circuit of the Wilkinson power divider is characterized in that an input port and an output port are connected through an RC filter, a first transmission line equivalent assembly and a second transmission line equivalent assembly which are sequentially connected in series; the input port is connected with the output port II through an RC filter, a third transmission line equivalent component and a fourth transmission line equivalent component which are sequentially connected in series. The invention adopts micro-nano processing technology to manufacture six layers of film type passive integrated devices on a gallium arsenide wafer, so that the size is greatly reduced, and the size of the Wilkinson power divider is only 1.5mm multiplied by 3mm multiplied by 0.65 mm. The manufacturing process of the invention has high precision and stable device performance.
Description
Technical Field
The invention belongs to the field of microwave devices, and particularly relates to a small broadband Wilkinson power divider and a preparation method thereof.
Background
The Wilkinson power divider is a passive device which can divide an input signal into two or more paths of input signal energy and output equal or unequal energy, and the main technical parameters of the Wilkinson power divider include center frequency, insertion loss, reflection loss, isolation width among power distribution ports, bandwidth and the like. The power divider is widely applied to radio frequency/microwave front-end communication systems, such as mixers, multipliers, power amplifiers and antenna arrays. In order to meet the increasing requirements of people on communication systems, broadband miniaturized power dividers are a hot spot of current research.
The frequency bandwidth of the Wilkinson power divider can be increased by using segmented transmission lines, using right/left-handed transmission lines, adding an isolation network and the like. The most widely used method is to use a multi-node topology network. Each section consists of quarter-wave lines. However, the multi-section wilkinson power divider based on the microstrip line occupies a larger circuit area, increases the manufacturing cost and the additional insertion loss, and is not easy to integrate with other circuit modules.
A common method of reducing area is to use discrete component circuits instead of quarter-wave transmission lines, which is difficult, time and cost-effective to fabricate, but may add additional time cost and parasitic parameters due to the large number of device wire bonds required. In addition to the use of PCB processing, low temperature co-fired ceramic (LTCC) technology and Complementary Metal Oxide Semiconductor (CMOS) technology are also widely used to fabricate power dividers. The LTCC technology is beneficial to improving the quality factor of a circuit system; a fine line structure circuit with the line width less than 50 mu m can be manufactured; the method can meet the requirements of large current and high temperature resistance, can manufacture circuit substrates with high layer number, and can embed a plurality of passive elements therein, thereby being beneficial to improving the assembly density of the circuit. However, the LTCC process greatly increases the production cost, and if the sintering densification speed is not easily matched, the surface of the fired substrate is not flat, warped and layered, and the adhesion of the metal wiring is reduced. The CMOS process can manufacture each module in a chip, is favorable for reducing the cost and realizing the miniaturization of the chip, and has more complex process.
Disclosure of Invention
The invention aims to solve the problems of large size and low device reliability of the Wilkinson power divider with the conventional planar cascade structure, and provides a broadband miniaturized Wilkinson power divider based on a thin film integrated passive device process and a preparation method thereof.
The broadband miniaturization Wilkinson power divider based on the thin film integrated passive device process comprises an input port1, a first output port2, a second output port3, two RC filters and four transmission line equivalent components, wherein a circuit of the broadband miniaturization Wilkinson power divider is formed by connecting the input port1 and the first output port2 through a first RC filter, the first transmission line equivalent component and the second transmission line equivalent component which are sequentially connected in series, wherein the first transmission line equivalent component is formed by a first inductor L1A first capacitor C1And a second capacitor C2Form a pi-type circuit, a first capacitor C1One end of (1) and a first inductor L1Connected with a first capacitor C1The other end of the first capacitor is grounded, and a second capacitor C2One end of (1) and a first inductor L1Connected capacitor C2The other end of the first and second electrodes is grounded; the second transmission line equivalent component is composed of a third inductor L3Fifth capacitor C5And a sixth capacitor C6Form a pi-type circuit, a fifth capacitor C5One end of (1) and a third inductor L3Connected capacitor C of five numbers5The other end of the capacitor is grounded, and a No. six capacitor C6One end of (1) and a third inductor L3Connected six-number capacitor C6The other end of the first and second electrodes is grounded;
the input port1 and the output port3 are connected through a second RC filter, a third transmission line equivalent component and a fourth transmission line equivalent component which are sequentially connected in series, wherein the third transmission line equivalent component is formed by a second inductor L2Third capacitor C3And a fourth capacitor C4Form a pi-type circuit, a third capacitor C3One end of (1) and a second inductor L2Connected third capacitor C3The other end of the capacitor is grounded, and a fourth capacitor C4One end of (1) and a second inductor L2Connected, fourth capacitor C4The other end of the first and second electrodes is grounded; the equivalent component of the fourth transmission line is composed of a fourth inductor L4Seventh capacitor C7And a capacitor C8Form a pi-type circuit, a seventh capacitor C7One end of (1) and a fourth inductor L4Connected capacitor C of No. seven7The other end of the capacitor is grounded, and a No. eight capacitor C8One end of (1) and a fourth inductor L4Connected eight-size capacitor C8The other end of the first and second electrodes is grounded;
there is first node a between No. one transmission line equivalent component and No. two transmission line equivalent components, has third node c between No. two transmission line equivalent components and an output port2, has second node b between No. three transmission line equivalent components and No. four transmission line equivalent components, has fourth node d between No. four transmission line equivalent components and No. two output port3, is provided with first dc resistance R between first node a and the second node b1A second DC blocking resistor R is arranged between the third node c and the fourth node d2；
The broadband miniature Wilkinson power divider is made into a multilayer structure through a thin film integrated passive device process.
The first RC filter is composed of a resistor R3And a capacitor C9Connected in parallel, the second RC filter being formed by a resistor R4And a capacitor C10Are connected in parallel. The transmission line equivalent component is a pi-type circuit composed of a capacitance component connected with the ground by clamping a series connection inductance component.
The preparation method of the broadband miniaturized Wilkinson power divider based on the thin film integrated passive device process is realized according to the following steps:
firstly, cleaning and polishing the surface of a substrate to obtain a clean substrate;
depositing a first SiNx layer on the surface of the clean substrate by adopting chemical vapor deposition;
depositing a NiCr layer on the surface of the first SiNx layer according to a circuit structure of the broadband miniature Wilkinson power divider, obtaining a thin film resistor through a photoetching process, forming a first seed metal layer through sputtering, etching a wafer by using a photoresist to obtain a structure of a bottom metal layer, and forming the bottom metal layer through electron beam evaporation, wherein the bottom metal layer is used as a bonding pad of the resistor, the bottom metal of the MIM capacitor and the spiral inductor;
fourthly, depositing a second SiNx layer on the bottom metal layer, wherein the second SiNx layer is used as a dielectric layer of the capacitor, and removing the resistor, the capacitor, an inductor port and the second SiNx layer needing to be connected with the air bridge part by Reactive Ion Etching (RIE), so that photoresist for the air bridge is deposited after a second seed metal layer is formed;
and fifthly, depositing a top metal layer on the second seed metal layer, wherein the top metal layer is used as an air bridge of the spiral inductor and a top metal of the MIM capacitor, then making the air bridge through reactive ion etching, and passivating to obtain the broadband miniature Wilkinson power divider based on the thin film integrated passive device process.
The invention widens the bandwidth of the Wilkinson power divider by utilizing a multi-section topological structure, and the two sections of topological structures can provide two different resonance frequency points so as to achieve the effect of widening the working frequency band under the condition of ensuring the isolation. And determining the characteristic impedance and the isolation resistance of each section by analyzing the odd-mode circuit and the even-mode circuit of the power divider. The quarter-wave transmission line is replaced by a pi-type circuit consisting of two capacitors and an inductor to reduce the size of the power divider.
The input end of the Wilkinson power divider is additionally provided with the RC filter to reduce the reflection coefficient at low frequency, so that the Wilkinson power divider can realize that the working frequency band starts from DC, the relative bandwidth can reach 200 percent, and the frequency is further widened. The increased blocking resistance also increases the isolation between the two output ports. The center frequency of the broadband miniaturized Wilkinson power divider based on the thin film integrated passive device process is 0.7 GHz.
The invention adopts micro-nano processing technology to manufacture six layers of film type passive integrated devices on a gallium arsenide wafer, so that the size can be greatly reduced, and the size of the Wilkinson power divider is only 1.5mm multiplied by 3mm multiplied by 0.65 mm. The invention has high precision of manufacturing process, stable performance of devices, high yield and low cost, and is convenient for integration with other circuit modules. Compared with other processing technologies, the GaAs wafer adopted by the invention can reduce parasitic capacitance and inductance effect and improve high quality factors of spiral inductance and MIM capacitance.
The invention adopts a processing technology of a thin film passive integrated device, and integrates a spiral inductor, a thin film resistor and an MIM capacitor at 1.5 multiplied by 3mm2The circuit realizes the miniaturization of the broadband Wilkinson power divider, is easy to package and integrate with other circuit modules, and effectively avoids time cost, extra loss and uncertain parasitic parameters caused by welding. The Wilkinson power divider designed by the invention has better isolation degree on a 10dB working frequency band, can realize that the working frequency band starts from 0GHz, the 10dB working frequency band is 0-1.4GHz, and the relative bandwidth is as high as 200%. The reflection loss at the central frequency is less than 15dB, the port isolation is less than 15dB, and the transmission coefficients of the two output ports are about 4.1 dB. Compared with the IPD process based on a microstrip structure, an LTCC process, a CMOS structure and other substrates, the invention adopts GaAs as the substrateMeanwhile, the structure is miniaturized to a greater extent, and the size can be reduced by more than 90%.
Drawings
FIG. 1 is a circuit diagram of a broadband miniaturized Wilkinson power divider based on a thin film integrated passive device process according to the present invention;
fig. 2 is a schematic partial cross-sectional view of a broadband miniaturized wilkinson power divider according to the present invention, in which a represents a substrate, b represents a first SiNx layer, c represents a bottom metal layer, d represents a second SiNx layer, e represents a second seed metal layer, f represents a top metal layer, g represents a passivation layer, h represents a first seed metal layer, x represents a thin film resistor, y represents an MIM capacitor, and z represents a spiral inductor;
FIG. 3 is a schematic diagram of a 3D structure of the broadband miniaturized Wilkinson power divider of the present invention;
FIG. 4 is an image of a broadband miniaturized Wilkinson power divider of the present invention under a microscope;
FIG. 5 is a test chart of the S parameter of the broadband miniature Wilkinson power divider in the embodiment, wherein 1 represents S11, 2 represents S21, 3 represents S31, and 4 represents S23.
Detailed Description
The first embodiment is as follows: the broadband miniaturized Wilkinson power divider based on the thin film integrated passive device process comprises an input port1, a first output port2, a second output port3, two RC filters and four transmission line equivalent components, wherein a circuit of the broadband miniaturized Wilkinson power divider is formed by connecting the input port1 and the first output port2 through a first RC filter, the first transmission line equivalent component and the second transmission line equivalent component which are sequentially connected in series, and the first transmission line equivalent component is formed by a first inductor L1A first capacitor C1And a second capacitor C2Form a pi-type circuit, a first capacitor C1One end of (1) and a first inductor L1Connected with a first capacitor C1The other end of the first capacitor is grounded, and a second capacitor C2One end of (1) and a first inductor L1Connected capacitor C2The other end of the first and second electrodes is grounded; the second transmission line equivalent component is composed of a third inductor L3Fifth capacitor C5And number six electricityContainer C6Form a pi-type circuit, a fifth capacitor C5One end of (1) and a third inductor L3Connected capacitor C of five numbers5The other end of the capacitor is grounded, and a No. six capacitor C6One end of (1) and a third inductor L3Connected six-number capacitor C6The other end of the first and second electrodes is grounded;
the input port1 and the output port3 are connected through a second RC filter, a third transmission line equivalent component and a fourth transmission line equivalent component which are sequentially connected in series, wherein the third transmission line equivalent component is formed by a second inductor L2Third capacitor C3And a fourth capacitor C4Form a pi-type circuit, a third capacitor C3One end of (1) and a second inductor L2Connected third capacitor C3The other end of the capacitor is grounded, and a fourth capacitor C4One end of (1) and a second inductor L2Connected, fourth capacitor C4The other end of the first and second electrodes is grounded; the equivalent component of the fourth transmission line is composed of a fourth inductor L4Seventh capacitor C7And a capacitor C8Form a pi-type circuit, a seventh capacitor C7One end of (1) and a fourth inductor L4Connected capacitor C of No. seven7The other end of the capacitor is grounded, and a No. eight capacitor C8One end of (1) and a fourth inductor L4Connected eight-size capacitor C8The other end of the first and second electrodes is grounded;
there is first node a between No. one transmission line equivalent component and No. two transmission line equivalent components, has third node c between No. two transmission line equivalent components and an output port2, has second node b between No. three transmission line equivalent components and No. four transmission line equivalent components, has fourth node d between No. four transmission line equivalent components and No. two output port3, is provided with first dc resistance R between first node a and the second node b1A second DC blocking resistor R is arranged between the third node c and the fourth node d2；
The broadband miniature Wilkinson power divider is made into a multilayer structure through a thin film integrated passive device process.
The second embodiment is as follows: the difference between the present embodiment and the present embodiment is the capacitance value of the transmission line equivalent element
Inductance value
Wherein ω is0At a resonant angular frequency, Z0Representing the characteristic impedance, theta is the phase at the resonant frequency.
The third concrete implementation mode: the difference between this embodiment and the first or second embodiment is that the inductance element in the transmission line equivalent assembly is a spiral inductance, and the capacitance element in the transmission line equivalent assembly is a MIM (metal-dielectric-metal) type capacitance.
The fourth concrete implementation mode: the difference between this embodiment and one of the first to third embodiments is that the first RC filter is composed of a resistor R3And a capacitor C9Connected in parallel, the second RC filter being formed by a resistor R4And a capacitor C10Are connected in parallel.
The fifth concrete implementation mode: the preparation method of the broadband miniature Wilkinson power divider based on the thin film integrated passive device process is implemented according to the following steps:
firstly, cleaning and polishing the surface of a substrate to obtain a clean substrate a;
depositing a first SiNx layer b on the surface of the clean substrate by adopting chemical vapor deposition;
depositing a NiCr layer on the surface of the first SiNx layer b according to a circuit structure of the broadband miniature Wilkinson power divider, obtaining a thin film resistor through a photoetching process, forming a first seed metal layer h through sputtering, etching a wafer by using a photoresist to obtain a structure of a bottom metal layer, and forming a bottom metal layer c through electron beam evaporation, wherein the bottom metal layer c is used as a bonding pad of the resistor, the bottom metal of the MIM capacitor and a spiral inductor;
fourthly, a second SiNx layer d is deposited on the bottom metal layer and serves as a dielectric layer of the capacitor, a resistor, the capacitor, an inductor port and the second SiNx layer d needing to be connected with an air bridge are removed through Reactive Ion Etching (RIE), and photoresist for the air bridge is deposited after a second seed metal layer e is formed on the second SiNx layer d;
and fifthly, depositing a top metal layer f on the second seed metal layer e, wherein the top metal layer f is used as an air bridge of the spiral inductor and a top metal of the MIM capacitor, then making the air bridge through reactive ion etching, and passivating to obtain the broadband miniature Wilkinson power divider based on the thin film integrated passive device process.
The circuit structure of the broadband miniaturized wilkinson power divider described in step three of this embodiment includes an input port1, an output port2, an output port3, two RC filters, and four transmission line equivalent components, and the circuit of the broadband miniaturized wilkinson power divider is connected between the input port1 and the output port2 through a first RC filter, a transmission line equivalent component, and a transmission line equivalent component connected in series in sequence, where the transmission line equivalent component is formed by a first inductor L, and a second inductor L1A first capacitor C1And a second capacitor C2Form a pi-type circuit, a first capacitor C1One end of (1) and a first inductor L1Connected with a first capacitor C1The other end of the first capacitor is grounded, and a second capacitor C2One end of (1) and a first inductor L1Connected capacitor C2The other end of the first and second electrodes is grounded; the second transmission line equivalent component is composed of a third inductor L3Fifth capacitor C5And a sixth capacitor C6Form a pi-type circuit, a fifth capacitor C5One end of (1) and a third inductor L3Connected capacitor C of five numbers5The other end of the capacitor is grounded, and a No. six capacitor C6One end of (1) and a third inductor L3Connected six-number capacitor C6The other end of the first and second electrodes is grounded;
the input port1 and the output port3 are connected through a second RC filter, a third transmission line equivalent component and a fourth transmission line equivalent component which are sequentially connected in series, wherein the third transmission line equivalent component is formed by a second inductor L2Third capacitor C3And a fourth capacitor C4Form a pi-type circuit, a third capacitor C3One end of (1) and a second inductor L2Connected third capacitor C3The other end of the capacitor is grounded, and a fourth capacitor C4One end of (1) and a second inductor L2Are connected with each otherCapacitor C of four numbers4The other end of the first and second electrodes is grounded; the equivalent component of the fourth transmission line is composed of a fourth inductor L4Seventh capacitor C7And a capacitor C8Form a pi-type circuit, a seventh capacitor C7One end of (1) and a fourth inductor L4Connected capacitor C of No. seven7The other end of the capacitor is grounded, and a No. eight capacitor C8One end of (1) and a fourth inductor L4Connected eight-size capacitor C8The other end of the first and second electrodes is grounded;
there is first node a between No. one transmission line equivalent component and No. two transmission line equivalent components, has third node c between No. two transmission line equivalent components and an output port2, has second node b between No. three transmission line equivalent components and No. four transmission line equivalent components, has fourth node d between No. four transmission line equivalent components and No. two output port3, is provided with first dc resistance R between first node a and the second node b1A second DC blocking resistor R is arranged between the third node c and the fourth node d2。
In the present embodiment, ads (advanced Design system) software is used to simulate the circuit and laminate information. The values of the electronic elements are related to the physical sizes of the electronic elements, and the reactance values of the electronic elements can be simply changed by changing the inner diameter and the number of turns of the spiral inductor and the length and width sizes of the MIM capacitor and the thin-film resistor, so that the design freedom is high. Each port is matched with impedance of 50 omega, and the reflection coefficient in the working frequency band is ensured to be less than-10 dB.
Compared with the existing broadband Wilkinson power divider based on other technologies, the broadband Wilkinson power divider can achieve the effect that the working frequency band starts from DC, and obtains larger relative bandwidth. Compared with the Wilkinson power divider adopting a planar cascade structure, the Wilkinson power divider adopting the six-layer structure passive integrated device technology can greatly reduce the area occupied by a circuit and reduce the size of the Wilkinson power divider.
In this embodiment, a Thin Film Integrated Passive Device (TFIPD) technology is used. Thin film resistors, metal-dielectric-metal (MIM) capacitors and spiral inductors can be fabricated integrated in a six-layer structure. The IPD device has the following advantages: the size is smaller; compared with a method for realizing a passive device by using a large number of discrete components, the IPD has low cost; and thirdly, the reliability of the system is improved, and uncertain parasitic parameters generated by welding are reduced.
The sixth specific implementation mode: the present embodiment is different from the fifth embodiment in that the thickness of the substrate a in the first step is 600 μm to 700 μm.
The seventh embodiment: the difference between this embodiment and the fifth or sixth embodiment is that the material of the substrate a in the first step is glass, monocrystalline silicon, gallium arsenide, silicon carbide or sapphire.
The specific implementation mode is eight: this embodiment is different from one of the fifth to seventh embodiments in that the thickness of the first SiNx layer b in the second step is 0.2 μm.
The specific implementation method nine: the difference between this embodiment and one of the fifth to eighth embodiments is that the first SiNx layer b is deposited on the clean substrate surface by Plasma Enhanced Chemical Vapor Deposition (PECVD) in the second step.
The detailed implementation mode is ten: this embodiment differs from one of the fifth to ninth embodiments in that the passivation process described in step five is to deposit a third SiNx layer as a passivation layer g on the top metal layer f.
The first embodiment is as follows: the broadband miniature Wilkinson power divider comprises an input port1, a first output port2, a second output port3, two RC filters and four transmission line equivalent components, wherein a circuit of the broadband miniature Wilkinson power divider is formed by connecting the input port1 and the first output port2 in series through the first RC filter, the first transmission line equivalent component and the second transmission line equivalent component which are sequentially connected in series, wherein the first transmission line equivalent component is formed by a first inductor L1A first capacitor C1And a second capacitor C2Form a pi-type circuit, a first capacitor C1One end of (1) and a first inductor L1Connected with a first capacitor C1The other end of the first capacitor is grounded, and a second capacitor C2One end of (1) and a first inductor L1Connected capacitor C2The other end of the first and second electrodes is grounded; the second transmission line equivalent component is composed of a third inductor L3Fifth capacitor C5And a sixth capacitor C6Form a pi-type circuit, a fifth capacitor C5One end of (1) and a third inductor L3Connected capacitor C of five numbers5The other end of the capacitor is grounded, and a No. six capacitor C6One end of (1) and a third inductor L3Connected six-number capacitor C6The other end of the first and second electrodes is grounded;
the input port1 and the output port3 are connected through a second RC filter, a third transmission line equivalent component and a fourth transmission line equivalent component which are sequentially connected in series, wherein the third transmission line equivalent component is formed by a second inductor L2Third capacitor C3And a fourth capacitor C4Form a pi-type circuit, a third capacitor C3One end of (1) and a second inductor L2Connected third capacitor C3The other end of the capacitor is grounded, and a fourth capacitor C4One end of (1) and a second inductor L2Connected, fourth capacitor C4The other end of the first and second electrodes is grounded; the equivalent component of the fourth transmission line is composed of a fourth inductor L4Seventh capacitor C7And a capacitor C8Form a pi-type circuit, a seventh capacitor C7One end of (1) and a fourth inductor L4Connected capacitor C of No. seven7The other end of the capacitor is grounded, and a No. eight capacitor C8One end of (1) and a fourth inductor L4Connected eight-size capacitor C8The other end of the first and second electrodes is grounded;
there is first node a between No. one transmission line equivalent component and No. two transmission line equivalent components, has third node c between No. two transmission line equivalent components and an output port2, has second node b between No. three transmission line equivalent components and No. four transmission line equivalent components, has fourth node d between No. four transmission line equivalent components and No. two output port3, is provided with first dc resistance R between first node a and the second node b1A second DC blocking resistor R is arranged between the third node c and the fourth node d2；
The broadband miniature Wilkinson power divider is made into a multilayer structure through a thin film integrated passive device process.
The circuit diagram of this embodiment is shown in fig. 1. Wherein the parameters of the respective elements are as follows C1＝C2＝C5＝C6＝2pf，C3＝C4＝C7＝C8＝1pf，C9＝C10＝13.08pf，L1＝L2＝10.74nH，L3＝L4＝8.55nH，R1＝130Ω，R2＝200Ω，R3＝R4＝30Ω。
Example two: the preparation method of the broadband miniaturized Wilkinson power divider based on the thin film integrated passive device process is implemented according to the following steps:
cleaning and polishing the surface of a GaAs wafer to avoid parasitic capacitance and inductive load of a conductive substrate for high-speed microelectronic application and obtain a clean substrate a;
depositing a first SiNx layer b on the surface of a clean substrate by adopting Plasma Enhanced Chemical Vapor Deposition (PECVD) to ensure that the surface is flat, so that other layers can be grown conveniently;
depositing a NiCr layer on the surface of the first SiNx layer b according to a circuit structure (see the circuit structure of the first embodiment) of the broadband miniature Wilkinson power divider, obtaining a thin film resistor through a photoetching process, etching a wafer by using a photoresist after forming a first seed metal layer h through sputtering to obtain a structure of a bottom metal layer, and forming a bottom metal layer c through electron beam evaporation, wherein the bottom metal layer c is used as a bonding pad of the resistor, the bottom metal of the MIM capacitor and the spiral inductor;
fourthly, a second SiNx layer d is deposited on the bottom metal layer and serves as a dielectric layer of the capacitor, and a resistor, the capacitor, an inductor port and the second SiNx layer d needing to be connected with an air bridge are removed through Reactive Ion Etching (RIE), so that photoresist for the air bridge is deposited after a second seed metal layer e is formed;
and fifthly, depositing a top metal layer f on the second seed metal layer e, wherein the top metal layer (copper/gold layer) f is used as an air bridge of the spiral inductor and top metal of the MIM capacitor, then making the air bridge by reactive ion etching, and passivating to obtain the broadband miniature Wilkinson power divider based on the thin film integrated passive device process.
Passive integrated device technology used in the present embodimentThe materials of the manufactured power divider from bottom to top are respectively that the first layer has the thickness of 650 mu m and the dielectric constant epsilonr112.85 gallium arsenide die substrate. The second layer is formed by plasma enhanced chemical vapor depositionr2A 0.2 μm thick silicon nitride (SiNx) layer of 7.5. The third layer is a nickel chromide (NiCr) layer with a precision of 25 omega/sq, which is used for manufacturing the thin film resistor. The fourth layer is a bottom metal layer and a second SiNx layer with the thickness of 0.2 mu m. The fifth layer is the upper (top) metal layer. The sixth layer is a SiNx layer with a thickness of 0.3 μm serving as a passivation layer to protect the components from oxidation and moisture.
Fig. 3 and fig. 4 are schematic structural diagrams of a wilkinson power divider of a small broadband IPD technology according to an embodiment. The relationship between the impedance value represented by each discrete component and its shape can be derived by simulation analysis. The center diameters of the spiral inductors used in this embodiment are 200 μm and 150 μm, respectively. The capacitance is 100 x 60 μm2、50×60μm2、200×200μm2。
From the results of fig. 5, it can be known that the wilkinson power divider of the small broadband IPD technology of the embodiment can realize a 10dB operating band of 0 to 1.4GHz, and the isolation in the operating band is up to 27dB at most. The embodiment can realize miniaturization, and the size is only 0.0035 lambda0×0.0070λ0。
Claims (6)
1. The broadband miniaturized Wilkinson power divider based on the thin film integrated passive device process comprises an input port1, a first output port2, a second output port3, two RC filters and four transmission line equivalent components, wherein a circuit of the broadband miniaturized Wilkinson power divider is formed by connecting a first RC filter, a first transmission line equivalent component and a second transmission line equivalent component which are sequentially connected in series between an input port1 and a first output port2, and the first transmission line equivalent component is formed by connecting a first inductor L and a second inductor L in series1A first capacitor C1And a second capacitor C2Form a pi-type circuit, a first capacitor C1One end of (A) andfirst inductor L1Connected with a first capacitor C1The other end of the first capacitor is grounded, and a second capacitor C2One end of (1) and a first inductor L1Connected capacitor C2The other end of the first and second electrodes is grounded; the second transmission line equivalent component is composed of a third inductor L3Fifth capacitor C5And a sixth capacitor C6Form a pi-type circuit, a fifth capacitor C5One end of (1) and a third inductor L3Connected capacitor C of five numbers5The other end of the capacitor is grounded, and a No. six capacitor C6One end of (1) and a third inductor L3Connected six-number capacitor C6The other end of the first and second electrodes is grounded;
the input port1 and the output port3 are connected through a second RC filter, a third transmission line equivalent component and a fourth transmission line equivalent component which are sequentially connected in series, wherein the third transmission line equivalent component is formed by a second inductor L2Third capacitor C3And a fourth capacitor C4Form a pi-type circuit, a third capacitor C3One end of (1) and a second inductor L2Connected third capacitor C3The other end of the capacitor is grounded, and a fourth capacitor C4One end of (1) and a second inductor L2Connected, fourth capacitor C4The other end of the first and second electrodes is grounded; the equivalent component of the fourth transmission line is composed of a fourth inductor L4Seventh capacitor C7And a capacitor C8Form a pi-type circuit, a seventh capacitor C7One end of (1) and a fourth inductor L4Connected capacitor C of No. seven7The other end of the capacitor is grounded, and a No. eight capacitor C8One end of (1) and a fourth inductor L4Connected eight-size capacitor C8The other end of the first and second electrodes is grounded;
there is first node a between No. one transmission line equivalent component and No. two transmission line equivalent components, has third node c between No. two transmission line equivalent components and an output port2, has second node b between No. three transmission line equivalent components and No. four transmission line equivalent components, has fourth node d between No. four transmission line equivalent components and No. two output port3, is provided with first dc resistance R between first node a and the second node b1A second DC blocking resistor R is arranged between the third node c and the fourth node d2；
The broadband miniature Wilkinson power divider is made into a multilayer structure by a thin film integrated passive device process; the preparation method is characterized by comprising the following steps:
firstly, cleaning and polishing the surface of a substrate to obtain a clean substrate (a);
depositing a first SiNx layer (b) on the surface of the clean substrate by adopting chemical vapor deposition;
depositing a NiCr layer on the surface of the first SiNx layer (b) according to a circuit structure of the broadband miniature Wilkinson power divider, obtaining a thin film resistor through a photoetching process, forming a first seed metal layer (h) through sputtering, etching a wafer by using a photoresist to obtain a structure of a bottom metal layer, and forming a bottom metal layer (c) through electron beam evaporation, wherein the bottom metal layer (c) is used as a bonding pad of the resistor, the bottom metal of the MIM capacitor and the spiral inductor;
fourthly, depositing a second SiNx layer (d) on the bottom metal layer, wherein the second SiNx layer (d) is used as a dielectric layer of the capacitor, and reactive ion etching is adopted to remove the resistor, the capacitor, an inductor port and the second SiNx layer (d) needing to be connected with an air bridge part, so that photoresist for the air bridge is deposited after a second seed metal layer (e) is formed;
and fifthly, depositing a top metal layer (f) on the second seed metal layer (e), wherein the top metal layer (f) is used as an air bridge of the spiral inductor and a top metal of the MIM capacitor, then making the air bridge through reactive ion etching, and passivating to obtain the broadband miniature Wilkinson power divider based on the thin film integrated passive device process.
2. The method for preparing a broadband miniaturized wilkinson power divider based on the thin film integrated passive device process as claimed in claim 1, wherein the thickness of the substrate (a) in the first step is 600 μm to 700 μm.
3. The method for preparing a broadband miniaturized wilkinson power divider based on the thin film integrated passive device process as claimed in claim 1, wherein the material of the substrate (a) in the first step is glass, single crystal silicon, gallium arsenide, silicon carbide or sapphire.
4. The method for preparing a broadband miniaturized wilkinson power divider based on thin film integrated passive device process as claimed in claim 1, wherein the thickness of the first SiNx layer (b) in the second step is 0.2 μm.
5. The method for preparing a broadband miniaturized wilkinson power divider based on thin film integrated passive device process as claimed in claim 1, wherein the second step is to deposit the first SiNx layer (b) on the surface of the clean substrate by plasma enhanced chemical vapor deposition.
6. The method for manufacturing a broadband miniaturized wilkinson power divider based on thin film integrated passive device process as claimed in claim 1, wherein the passivation process in the fifth step is to deposit a third SiNx layer as a passivation layer (g).
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| CN110247146B (en) * | 2019-06-27 | 2020-11-03 | 北京邮电大学 | Broadband power divider chip based on thin film integrated passive element technology |
| CN111600575A (en) * | 2020-04-11 | 2020-08-28 | 复旦大学 | Input matching circuit based on multisection artificial transmission line |
| CN111834726B (en) * | 2020-07-28 | 2022-04-19 | 南京理工大学 | Broadband filtering power divider capable of realizing high power division ratio |
| CN114710138B (en) * | 2022-06-08 | 2022-09-20 | 成都嘉纳海威科技有限责任公司 | Multi-channel amplification attenuation phase-shift serial port control multifunctional chip |
| CN114976554A (en) * | 2022-06-21 | 2022-08-30 | 中国电子科技集团公司第五十五研究所 | P-waveband-based miniaturized high-power Wilkinson power divider |
| CN115603692B (en) * | 2022-11-24 | 2023-03-10 | 成都频岢微电子有限公司 | N77 frequency band miniaturization filtering power divider based on IPD (inverse diode) process |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005101946A (en) * | 2003-09-25 | 2005-04-14 | Mitsumi Electric Co Ltd | Power divider/combiner |
| KR20060002689A (en) * | 2004-07-01 | 2006-01-09 | 주식회사 에이스테크놀로지 | N-way power divider/combiner |
| CN202121048U (en) * | 2011-07-18 | 2012-01-18 | 北京瑞德艾迪科技有限公司 | Power divider, electronic device and radio frequency front end device |
| CN106329052A (en) * | 2015-06-30 | 2017-01-11 | 展讯通信（上海）有限公司 | Power divider |
| CN109546280A (en) * | 2018-12-12 | 2019-03-29 | 南京米乐为微电子科技有限公司 | A kind of broadband compact RF power divider |
-
2019
- 2019-03-29 CN CN201910252633.4A patent/CN109802216B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005101946A (en) * | 2003-09-25 | 2005-04-14 | Mitsumi Electric Co Ltd | Power divider/combiner |
| KR20060002689A (en) * | 2004-07-01 | 2006-01-09 | 주식회사 에이스테크놀로지 | N-way power divider/combiner |
| CN202121048U (en) * | 2011-07-18 | 2012-01-18 | 北京瑞德艾迪科技有限公司 | Power divider, electronic device and radio frequency front end device |
| CN106329052A (en) * | 2015-06-30 | 2017-01-11 | 展讯通信（上海）有限公司 | Power divider |
| CN109546280A (en) * | 2018-12-12 | 2019-03-29 | 南京米乐为微电子科技有限公司 | A kind of broadband compact RF power divider |
Non-Patent Citations (1)
| Title |
|---|
| A high performance compact Wilkinson power divider using GaAs-based optimized integrated passive device fabrication process for LTE application;YangLi;《International Journal of Engineering and Technical Research》;20141031;第2卷;正文第141-144页 * |
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