CN213717034U - IPD absorption type band-pass filter - Google Patents

Abstract

The utility model relates to an IPD absorption formula band pass filter belongs to wave filter technical field. Including the back of the body layer of base member layer and base member layer lower surface, the growth has the first silicon nitride layer on the base member layer, the sputtering has the thin film resistance layer on the first silicon nitride layer, be formed with the first metal layer on the first silicon nitride layer, grow the second silicon nitride layer on the first metal layer, grow the polyimide layer on the second silicon nitride layer, be formed with the second metal layer on the polyimide layer, grow the third silicon nitride layer on the second metal layer, form the filter circuit structure on first metal layer and the second metal layer, the filter circuit structure includes the first band-pass signal processing unit, the second band-pass signal processing unit and the LC parallel resonance circuit of establishing ties between input port and output port, the utility model discloses an IPD-GaAs technology, through processes such as photoetching, sputtering, electroplating, sculpture, the absorption filter circuit structure is manufactured on the GaAs substrate, and has the effect of high-impedance band suppression.

Description

IPD absorption type band-pass filter

Technical Field

The utility model relates to an IPD absorption formula band pass filter belongs to wave filter technical field.

Background

With the rapid development of communication technology, the demand of a communication system for high-performance and miniaturized passive components is increasing, and a bandpass filter is one of important electronic components of a communication device, and the performance of the bandpass filter directly affects the performance of the communication system. Stop band "attenuation" signals in conventional bandpass filters are reflected to the signal source, however, these reflected signals may adversely affect the overall RF system. For example, a mixer is extremely sensitive to out-of-band terminations on its ports, while filters are often present in the front-end and back-end of the mixer. The intermodulation products attenuated by the filter being reflected back to the mixer may generate unwanted harmonics that can cause system instability.

Some absorptive filters are generated according to the defects of the conventional filter. For example, a complementary duplexer is formed by connecting a low-pass prototype filter and a complementary high-pass filter in parallel to absorb the stop-band signal, but this requires a large space and causes impedance mismatch. The addition of two conventional microstrip combline bandpass filters between two microstrip 3dB directional couplers, while also absorbing stop band signals, limits the bandwidth of the filters by the width of the bridge. The input end and the output end of the integrated circuit are connected with two equal-phase power dividers, and then an upper path and a lower path between the two equal-phase power dividers are respectively connected with a + 45-degree high-pass phase shifter, a traditional band-pass filter and a-45-degree low-pass phase shifter which are connected in series, so that the function of phase cancellation of an input signal and a reflected signal at the input end is realized, although the effect of absorbing the reflected signal is achieved, a large number of circuit elements are needed, and the layout and the mutual influence of the elements of the integrated circuit block the integrated circuit for the current miniaturization requirement.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to overcome the above-mentioned defect that current low pass filter exists, provide an IPD absorption formula band pass filter, adopt IPD-GaAs technology, through processes such as photoetching, sputtering, electroplating, sculpture, make absorption formula filter circuit structure on the GaAs base member, have the effect that the high resistance area restraines.

The utility model discloses an adopt following technical scheme to realize:

the utility model provides an IPD absorption formula band-pass filter, including the back of the body layer gold layer of base member layer and base member layer lower surface, it has first silicon nitride layer to grow on the base member layer, it has the thin film resistance layer to sputter on the first silicon nitride layer, be formed with first metal level on the first silicon nitride layer, it has second silicon nitride layer to grow on the first metal level, it has the polyimide layer to grow on the second silicon nitride layer, be formed with the second metal level on the polyimide layer, it has third silicon nitride layer to grow on the second metal level, form filter circuit structure on first metal level and the second metal level.

Furthermore, the filter circuit structure comprises a first band-pass signal processing unit and a second band-pass signal processing unit which are connected in series between the input port and the output port, and an LC parallel resonance circuit connected with the ground port is arranged between the first band-pass signal processing unit and the second band-pass signal processing unit.

Furthermore, the first band-pass signal processing unit and the second band-pass signal processing unit both comprise a band-pass signal passage and an out-of-band absorption branch which are connected in parallel.

Furthermore, the band-pass signal path is an LC series resonance circuit, and the out-of-band absorption branch is a series circuit of the LC parallel resonance circuit and the absorption resistor.

Furthermore, the inductor in the filter circuit structure is a planar spiral inductor, and the shape of the inductor is a circular inductor, a square inductor, a rectangular inductor or a polygonal inductor.

Further, the capacitor in the filter circuit structure is an MIM capacitor.

Further, the absorption resistor is a TaN thin film resistor.

Further, there are 4 ground ports, two of which form a GSG coplanar port with the input port and two of which form a GSG coplanar port with the output port.

Further, the grounding port is connected with the back gold layer through a connecting through hole formed by a crystal back perforating process.

The utility model has the advantages that:

the utility model discloses make wave filter circuit structure on the GaAs base member, the wave filter structure includes the two-stage absorption formula band pass signal processing unit, and absorption formula band pass signal processing unit includes that band pass signal path and passband absorb branch way outward, and the absorption of stop band reflection signal is realized to above circuit cooperation main circuit LC parallel resonance to reach the effect that the high stop band restraines. The GSG port is adopted, so that the microwave module can be conveniently integrated with other microwave modules, and based on IPD-GaAs process design, through the procedures of photoetching, sputtering, electroplating, etching and the like, the yield is high, the batch consistency is good, and the microwave module is suitable for mass production.

Drawings

Fig. 1 is an equivalent circuit diagram of the present invention;

FIG. 2 is a schematic view of the process of the present invention;

fig. 3 is a schematic three-dimensional structure of the present invention;

fig. 4 is a schematic plan view of the present invention;

fig. 5 shows the simulation result of the S parameter of the present invention.

Description of reference numerals:

1 back gold layer; 2 a substrate layer; 3 a first silicon nitride layer; 4 a first metal layer; 5 a thin film resistive layer; 6 a second silicon nitride layer; 7 a polyimide layer; 8 a second metal layer; 9 a third silicon nitride layer; 10 a circuit structure; 11GSG coplanar port.

Detailed Description

The present invention will be further explained with reference to the accompanying drawings.

As shown in fig. 1, the absorption band pass filter of the present invention, including the back gold layer 1 of the base layer 2 and the base layer 2 lower surface, further including the metal layer, the metal layer forms the filter circuit structure 10, the filter circuit structure 10 includes the first band pass signal processing unit and the second band pass signal processing unit which are connected in series between the input port and the output port, the band pass filter basic main path connected with the ground port is arranged between the first band pass signal processing unit and the second band pass signal processing unit, the band pass signal processing unit is composed of the band pass signal path and the out-of-band absorption branch path; wherein the basic main circuit of the band-pass filter is an inductor and capacitor parallel resonance (L3, C3); the band-pass signal path is in inductance and capacitance series resonance (L1, C1); the out-of-band absorption branch is formed by connecting an absorption resistor (R1) in series with inductance and capacitance parallel resonance (L2 and C2).

As shown in fig. 2, the absorption band pass filter of the present invention adopts IPD-GaAs process, and produces a circuit structure 10 on a GaAs substrate through the processes of photolithography, sputtering, electroplating, etching, etc.; the process comprises the steps of grinding and polishing the GaAs substrate to ensure that the thickness of the substrate layer 2 is 100 mu m and the surface flatness is less than 0.1 mu m; growing a first silicon nitride layer 3 with the thickness of 0.16 mu m on the upper surface of the polished GaAs substrate as an adhesion layer; manufacturing a TaN nitride (TaN) film resistor layer 5 on the adhesion layer by adopting a sputtering deposition method; photoetching a first metal layer 4 on the adhesion layer, wherein the thickness of the metal layer is 1 mu m, and the metal layer is used for an inductance connecting line and a lower polar plate of the MIM capacitor; growing a second silicon nitride layer 6 with the thickness of 0.4 mu m on the first metal layer 4 as a capacitor dielectric layer, photoetching a metal layer in a capacitor lower electrode plate area and a connecting through hole area, and adjusting the capacitance characteristic by adjusting the thickness of the metal layer; growing a polyimide layer 7 with the thickness of 1.6 mu m on the second silicon nitride layer 6, and photoetching a metal layer on a capacitance upper plate area and a connecting through hole area of the polyimide layer 7, wherein the metal layer mainly functions to reduce the cross capacitance between the first metal layer 4 and the second metal layer 8; forming a second metal layer 8 on the polyimide layer 7 by an electroplating process, wherein the second metal layer 8 has a thickness of 4 μm and is used for an upper plate of the planar spiral inductor and the MIM capacitor; finally, a third silicon nitride layer 9 with the thickness of 5 microns is grown on the second metal layer 8 to serve as a passivation layer, the purpose is to protect a circuit, and a GSG port is led out through graphical processing; manufacturing a connecting through hole on the lower surface of the GaAs substrate by using a back-of-wafer (BSP) punching process to be connected with the back-of-wafer layer 1; a back gold layer 1 with the thickness of 2 mu m is electroplated on the lower surface of the GaAs substrate and is used as an equivalent earth and mounting connection surface of the device.

As shown in fig. 3 and fig. 4, the absorption band pass filter of the present invention is implemented by IPD-GaAs process, the size is 1.1mm × 0.8mm × 0.1mm, 4 ground ports are provided, two of the ground ports form a GSG coplanar port 11 with the input port, two of the ground ports form a GSG coplanar port 11 with the output port, the ground ports form a connection via hole through a back-of-wafer via-hole process to connect with the back-of-gold layer 1, wherein the inductance L1 is 2.04nH, the inductance L2 is 2.12nH, the inductance L3 is 1.8nH, the capacitance C1 is 0.912pF, the capacitance C2 is 0.888pF, the capacitance C3 is 1.02pF, and the resistance R1 is 50 Ω.

As shown in fig. 5, the passband frequency of the absorption band pass filter of the present invention is 3.0 to 4.6GHz, and the insertion loss in the passband is less than 1.2 dB; the internal inhibition of the stop band DC to 1.6GHz is more than 15dB, and the internal inhibition of the stop band DC to 6.5 GHz to 15GHz is more than 15 dB.

The utility model provides an IPD absorption formula band pass filter has advantages such as small-size, light in weight, high stop band suppression, in addition the utility model discloses based on IPD-GaAs process design, the product uniformity is good to be fit for mass production.

The basic principles and the main features of the invention and the advantages of the invention have been shown and described above. It will be understood by those skilled in the art that the present invention is not limited to the above embodiments, and that the foregoing embodiments and descriptions are provided only to illustrate the principles of the present invention without departing from the spirit and scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (9)

1. The utility model provides an IPD absorption formula band pass filter, includes the back of the body gold layer of base member layer and base member layer lower surface, its characterized in that, it has first silicon nitride layer to grow on the base member layer, the sputtering has the thin film resistance layer on the first silicon nitride layer, be formed with first metal level on the first silicon nitride layer, it has second silicon nitride layer to grow on the first metal level, it has the polyimide layer to grow on the second silicon nitride layer, be formed with the second metal level on the polyimide layer, it has third silicon nitride layer to grow on the second metal level, form filter circuit structure on first metal level and the second metal level.

2. The IPD absorptive bandpass filter of claim 1, wherein: the filter circuit structure comprises a first band-pass signal processing unit and a second band-pass signal processing unit which are connected in series between an input port and an output port, wherein an LC parallel resonance circuit connected with a grounding port is arranged between the first band-pass signal processing unit and the second band-pass signal processing unit.

3. The IPD absorptive bandpass filter of claim 2, wherein: the first band-pass signal processing unit and the second band-pass signal processing unit both comprise a band-pass signal passage and a passage out-of-band absorption branch which are connected in parallel.

4. The IPD absorptive bandpass filter of claim 3, wherein: the band-pass signal path is an LC series resonance circuit, and the out-of-band absorption branch is a series circuit of an LC parallel resonance circuit and an absorption resistor.

5. The IPD absorptive bandpass filter of claim 1, wherein: the inductor in the filter circuit structure is a planar spiral inductor and is in a shape of a circular inductor, a square inductor, a rectangular inductor or a polygonal inductor.

6. The IPD absorptive bandpass filter of claim 1, wherein: and the capacitor in the filter circuit structure is an MIM capacitor.

7. The IPD absorbing bandpass filter according to claim 4, characterized in that: the absorption resistor is a TaN film resistor.

8. The IPD absorptive bandpass filter of claim 2, wherein: the number of the grounding ports is 4, two of the grounding ports and the input port form a GSG coplanar port, and the two grounding ports and the output port form a GSG coplanar port.

9. The IPD absorptive bandpass filter of claim 2, wherein: the grounding port is connected with the back gold layer through a connecting through hole formed by a crystal back perforation process.

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