CN217563621U - IPD high-pass filter - Google Patents
IPD high-pass filter Download PDFInfo
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- CN217563621U CN217563621U CN202220817063.6U CN202220817063U CN217563621U CN 217563621 U CN217563621 U CN 217563621U CN 202220817063 U CN202220817063 U CN 202220817063U CN 217563621 U CN217563621 U CN 217563621U
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Abstract
The application relates to a filter tool and discloses an IPD high-pass filter, which comprises a protective layer, a gallium arsenide substrate, a grounding bottom plate and a grounding copper column, wherein the protective layer and the grounding bottom plate are respectively arranged on the upper surface and the lower surface of the gallium arsenide substrate; the upper surface of gallium arsenide base plate is equipped with high-pass filter circuit, the protective layer covers above the high-pass filter circuit, the high-pass filter circuit includes: the top of the input port is exposed out of the protective layer; an output port, the top of which is exposed out of the protective layer; the N filter capacitors are connected in series between the input port and the output port through transmission lines; the N-1 resonant circuits are connected between the transmission lines and the grounding bonding pads of the two adjacent filter capacitors in a one-to-one correspondence manner, the grounding bonding pads are connected to the grounding bottom plate through the grounding copper columns, N is more than or equal to 4, and the filter has the characteristics of compact structure, wide bandwidth, high suppression, low insertion loss and easiness in processing.
Description
Technical Field
The present application belongs to the field of filter technology, and in particular, to an IPD (Integrated Passive Device) high-pass filter.
Background
The main function of the filter is to reject unwanted signals outside the filter passband and to separate the signals according to their frequency. The rf filters may vary the amplitude and phase of the sinusoidal waveforms passing through them or, more simply, the rf filters may remove unwanted frequency components from the signal while retaining the desired frequency components. The rf filter is intended for processing signals throughout the radio spectrum, covering the fields of radio, television, wireless communications, scientific research and military/defense. Therefore, the performance of the filter directly affects the communication quality of the entire wireless communication system.
Due to the particularity of the application occasions, such as common use of the filter in navigation, remote measurement and the like, airborne, missile-borne, vehicle-mounted electronic, wireless local area network, radar transceiver system, satellite positioning and the like, the performances of light weight, small size and the like become extremely important, and therefore the miniaturization design of the filter is a hot spot which is always pursued and designed by people. With the rapid development of wireless communication systems in recent years, communication devices and components are gradually developed toward miniaturization, high performance, high integration and low cost.
The microwave high-pass filter is a microwave device which allows high-frequency signals to pass through and attenuates and cuts low-frequency signals. As one of the microwave filters, a high-pass filter is also widely used. In the context of modern applications, high pass filters are generally required to have a wide bandwidth, low insertion loss, high out-of-band rejection and high port reflection. Theoretically, to achieve high rejection requires increasing the order of the filter, which inevitably increases the insertion loss of the filter, makes impedance matching difficult, and increases the size of the filter. To achieve a larger bandwidth, the amount of coupling needs to be increased to bring the two resonators closer together, but is also limited by the fabrication process.
SUMMERY OF THE UTILITY MODEL
The application aims to provide an IPD high-pass filter which is compact in structure, wide in bandwidth, high in suppression, low in insertion loss and easy to machine.
The first aspect of the embodiment of the application provides an IPD high-pass filter, which comprises a protective layer, a gallium arsenide substrate, a grounding bottom plate and a grounding copper column, wherein the protective layer and the grounding bottom plate are respectively arranged on the upper surface and the lower surface of the gallium arsenide substrate; the upper surface of gallium arsenide base plate is equipped with high pass filter circuit, the protective layer covers above high pass filter circuit, high pass filter circuit includes:
the top of the input port is exposed out of the protective layer;
an output port, the top of which is exposed out of the protective layer;
the N filter capacitors are respectively connected between the input port and the output port in series through transmission lines;
and the N-1 resonant circuits are connected between the transmission lines of the two adjacent filter capacitors and the grounding bonding pads in a one-to-one correspondence manner, the grounding bonding pads are connected to the grounding bottom plate through the grounding copper columns, and N is more than or equal to 4.
In one embodiment, the other filter capacitors except the two filter capacitors connected with the input port and the output port are formed by connecting n single capacitors in series through transmission lines, the sizes and the capacitance values of the single capacitors are consistent, the capacitance value of the single capacitor is n times of the capacitance value of the filter capacitor, and n is larger than or equal to 2.
In one embodiment, the number of the filter capacitors is 4, and the number of the resonant circuits is 3.
In one embodiment, the resonant circuit includes a resonant inductor and a resonant capacitor, which are connected in series between the transmission line and the ground pad, and the transmission line is used to connect two adjacent filter capacitors.
In one embodiment, the filter capacitor and the resonant capacitor are MIM structures.
In one embodiment, the resonant inductor is a planar spiral structure.
In one embodiment, a ground port connected to the ground backplane through the ground copper pillar is disposed on each of two sides of the input port and the output port, and a top of the ground port is exposed on the protection layer.
In one embodiment, the input port and the output port have a size of 100um × 100um, and the ground pad has a size of 84um × 84um.
In one embodiment, the IPD high-pass filter has dimensions of 1.3mm × 0.7mm × 0.1mm.
In one embodiment, the passband frequency of the IPD high-pass filter is 24GHz-40 GHz.
Compared with the prior art, the embodiment of the application has the advantages that: the IPD high-pass filter provided by the application is arranged on the basis of the gallium arsenide substrate, the filter capacitors and the resonant circuit are regularly arranged, and the grounding panel is arranged on the basic back surface, so that the whole high-pass filter has the characteristics of compact structure, wide bandwidth, high suppression, low insertion loss and easiness in processing.
Drawings
Fig. 1 is a schematic structural diagram of an IPD high-pass filter according to an embodiment of the present application;
fig. 2 is a simulation graph of the IPD high-pass filter according to the embodiment of the present application.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application clearer, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, refer to an orientation or positional relationship illustrated in the drawings for convenience in describing the present application and to simplify description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present application.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
Referring to fig. 1, an IPD high-pass filter according to an embodiment of the present invention includes a passivation layer (not shown), a gaas substrate 100, a ground plate (not shown) and a ground copper pillar 200, wherein the passivation layer and the ground plate are disposed on an upper surface and a lower surface of the gaas substrate 100, respectively; the upper surface of the gallium arsenide substrate 100 is provided with a high-pass filter circuit, the protective layer covers the high-pass filter circuit, and the high-pass filter circuit includes an input port 110, an output port 120, N filter capacitors (in this example, including a filter capacitor 131, a filter capacitor 132, a filter capacitor 133, and a filter capacitor 134), and N-1 resonant circuits (in this example, including a resonant circuit 141, a resonant circuit 142, and a resonant circuit 143).
The top of the input port 110 is exposed to the protection layer; the top of the output port 120 is exposed to the protection layer; further, a ground port 122 connected to a ground substrate through a ground copper pillar 200 is respectively disposed on both sides of the input port 110 and the output port 120, and a top of the ground port 122 is exposed on the protection layer. The input port 110 and the ground ports 122 on both sides form a radio frequency input coplanar end, and the output port 120 and the ground ports 122 on both sides form a radio frequency output coplanar end.
In another embodiment, the input port 110 and the two-side ground ports 122 thereof form an input test port, and the output port 120 and the two-side ground ports 122 thereof form an output test port. The method is used for realizing the test and debugging of the device.
The filter capacitor 131, the filter capacitor 132, the filter capacitor 133 and the filter capacitor 134 are connected in series between the input port 110 and the output port 120 through transmission lines; the resonant circuits 141, 142 and 143 are connected between the transmission lines of two adjacent filter capacitors and the ground pad 150 in a one-to-one correspondence manner, the ground pad 150 is connected to the ground bottom plate through the ground copper pillar 200, N is greater than or equal to 4, in this example, N =4, and a 7-order series elliptic function response high-pass filter structure is formed. In other embodiments, N may be 5, 6, 7, etc.
It is understood that the grounding copper pillars 200 penetrate the upper and lower surfaces of the gallium arsenide substrate 100, and the grounding pads 150 cover the tops of the grounding copper pillars 200.
Based on the gallium arsenide substrate, the filter capacitors and the resonant circuit are regularly arranged, and the ground panel is arranged on the basic back surface, so that the whole high-pass filter has the characteristics of compact structure, wide bandwidth, high rejection, low insertion loss and easiness in processing.
In one embodiment, the filter capacitors 132 and 133 except the two filter capacitors 131 and 134 connected to the input port 110 and the output end are connected in series, the filter capacitor 132 is formed by connecting the single capacitor 1321 and the single capacitor 1322 in series through a transmission line, and the filter capacitor 133 is formed by connecting the single capacitor 1331 and the single capacitor 1332 in series through a transmission line.
The sizes and the capacitance values of the single capacitors 1321, 1322, 1331 and 1332 are the same, and the capacitance values of the single capacitors 1321, 1322, 1331 and 1332 are n times of that of the filter capacitor, and n is larger than or equal to 2. In other embodiments, all the filter capacitors 131, 132, 133 and 134 may be formed by connecting n single capacitors in series through transmission lines, so that the processing precision of the single capacitors can be ensured, and the in-band performance stability of the whole circuit can be improved.
In the example, the middle filter capacitor 132 is formed by connecting the single capacitor 1321 and the single capacitor 1322 in series, and the filter capacitor 133 is formed by connecting the single capacitor 1331 and the single capacitor 1332 in series. Since the overall size of the single capacitors 1321, 1322, 1331, 1332 is inversely related to the capacitance, and the size of the single filter capacitor 132 or 133 is positively related to the capacitance. Therefore, in consideration of the processing capability and the processing precision of the capacitor processing, the series structure of n single capacitors 1321, 1322, 1331 and 1332 with larger capacitance values is selected to replace one filter capacitor 132 and one filter capacitor 133 with smaller capacitance values, so that the processing precision of the single capacitors 1321, 1322, 1331 and 1332 can be ensured, and the in-band performance stability of the whole circuit can be improved.
In one embodiment, the resonant circuits 141, 142 and 143 integrally include a resonant inductor 1411, a resonant inductor 1421, a resonant inductor 1431, a resonant capacitor 1412, a resonant capacitor 1422 and a resonant capacitor 1432, the resonant inductor 1411 and the resonant capacitor 1412 are connected in series between the transmission line for connecting two adjacent filter capacitors 131 and 132 and the ground pad 150, the resonant inductor 1421 and the resonant capacitor 1422 are connected in series between the transmission line for connecting two adjacent filter capacitors 132 and 133 and the ground pad 150, and the resonant inductor 1431 and the resonant capacitor 1432 are connected in series between the transmission line for connecting two adjacent filter capacitors 133 and 134 and the ground pad 150. The filter is used for greatly attenuating harmonic waves beyond a preset frequency to form a 7 th-order series elliptic function response high-pass filter structure.
In this embodiment, the IPD high-pass filter includes a first filter capacitor 131, a first single capacitor 1321, a second single capacitor 1322, a third single capacitor 1331, a fourth single capacitor 1332, a fourth filter capacitor 134, a first resonant circuit 141, a second resonant circuit 142, and a third resonant circuit 143. The first individual capacitor 1321 and the second individual capacitor 1322 form the second filter capacitor 132 through transmission lines, and the third individual capacitor 1331 and the fourth individual capacitor 1332 form the third filter capacitor 133 through transmission lines. The processing precision of the single capacitor 1321, the single capacitor 1322, the single capacitor 1331 and the single capacitor 1332 is ensured, and the in-band performance stability of the whole circuit is improved.
The first resonant circuit 141 comprises a first resonant inductor 1411 and a first resonant capacitor 1412, the first filter capacitor 131 and the first single capacitor 1321 are connected with the first resonant inductor 1411 through a transmission line, the first resonant inductor 1411 is connected with the first resonant capacitor 1412 in series through the transmission line, and the first resonant capacitor 1412 is connected with the ground pad 150 and the ground copper pillar 200 through the transmission line to realize grounding. For significantly attenuating harmonics higher than the predetermined frequency of the first resonant circuit 141.
The second resonant circuit 142 includes a second resonant inductor 1421 and a second resonant capacitor 1422, the second single capacitor 1322 and the third single capacitor 1331 are connected to the second resonant inductor 1421 through a transmission line, the second resonant inductor 1421 is connected in series with the second resonant capacitor 1422 through a transmission line, and the second resonant capacitor 1422 is connected to the ground plane board through the transmission line and the ground pad 150 and the ground copper pillar 200 to implement grounding. For substantially attenuating harmonics higher than a predetermined frequency of the second resonant circuit 141.
The third resonant circuit 143 includes a third resonant inductor 1431 and a third resonant capacitor 1432, the fourth single capacitor 1332 and the fourth filter capacitor 130 are connected to the third resonant inductor 1431 through a transmission line, the third resonant inductor 1431 is connected in series with the third resonant capacitor 1432 through a transmission line, and the third resonant capacitor 1432 is connected to the ground pad 150 through a transmission line and the ground copper pillar 200 is connected to the ground plane board to implement grounding. For significantly attenuating harmonics outside the predetermined frequency higher than the third resonant circuit 141.
A passband frequency within 24GHz to 40GHz is set by the three resonant circuits 141, 142 and 143, and harmonics other than the frequency 24GHz to 40GHz can be filtered out.
The single capacitor 1321, the single capacitor 1322, the single capacitor 1331, the single capacitor 1332, the filter capacitor 131, the filter capacitor 134, the resonant capacitor 1412, the resonant capacitor 1422, and the resonant capacitor 1432 may be passive capacitors, such as MIM (metal-dielectric-metal) structures. The MIM structure device has the advantages of simple manufacturing process, low cost, stable capacitance value and high reliability.
The resonant inductor 1411, the resonant inductor 1421 and the resonant inductor 1431 are planar spiral structures, the three resonant inductors 1411, the resonant inductor 1421 and the resonant inductor 1431 are rectangular planar spiral structures, and the area of the first resonant inductor 1411, the area of the capacitor of the second resonant inductor 1421 and the area of the third resonant inductor 1431 are sequentially increased. The MIM structure device has low cost, stable capacitance value and good reliability.
The resonant inductor 1411, the resonant inductor 1421, and the resonant inductor 1431 may be arranged by using copper foils.
Wherein, each transmission line can also be arranged by adopting copper foil.
In one example, the input port 110 (pad) and the output port 120 (pad) are 100um by 100um in size, and the ground pad 150 is 84um by 84um in size. The dimensions of the IPD high-pass filter are 1.3mm × 0.7mm × 0.1mm.
It will be appreciated that the above dimensions are provided as an example only, and that the above dimensions may be referred to and appropriately modified for specific fabrication. In addition, in the embodiment, the passband frequency of the IPD high-pass filter is 24GHz to 40GHz.
The design method of the lumped parameter is realized, the structure is simple, the processing technology is mature, and the development of the IPD high-pass filter with the passband frequency of 24GHz-40GHz is completed.
According to the simulation results, as shown in FIG. 2, in the range of 24GHz to 40 GHz:
s11 < -15dB, which indicates that the reflected loss is small, and impedance matching is achieved;
s21 > -2dB, which shows that the insertion loss is small, the transmission characteristic is good,
at 19.93 GHz:
s21 < -20dB, which shows that the rectangle coefficient is good and has steep cut-off frequency;
at DC-17.92 GHz:
s21 is less than-40 dB, and S21 is less than-45 dB at DC-12.92 GHz, so that the high out-of-band rejection characteristic is achieved.
The size of the high-pass filter chip is 1.3mm multiplied by 0.7mm multiplied by 0.1mm, and the purposes of miniaturization, high out-of-band rejection, low insertion loss, wide frequency band and miniaturization are achieved.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the embodiments of the present application, and they should be construed as being included in the present application.
Claims (10)
1. An IPD high-pass filter is characterized by comprising a protective layer, a gallium arsenide substrate, a grounding bottom plate and a grounding copper column, wherein the protective layer and the grounding bottom plate are respectively arranged on the upper surface and the lower surface of the gallium arsenide substrate; the upper surface of gallium arsenide base plate is equipped with high-pass filter circuit, the protective layer covers above the high-pass filter circuit, the high-pass filter circuit includes:
the top of the input port is exposed out of the protective layer;
an output port, the top of which is exposed out of the protective layer;
the N filter capacitors are respectively connected between the input port and the output port in series through transmission lines;
and the N-1 resonant circuits are connected between the transmission lines of the two adjacent filter capacitors and the grounding bonding pads in a one-to-one correspondence manner, the grounding bonding pads are connected to the grounding bottom plate through the grounding copper columns, and N is more than or equal to 4.
2. The IPD high-pass filter according to claim 1, wherein the other filter capacitors except the two filter capacitors connected to the input port and the output port are formed by connecting n individual capacitors in series through a transmission line, the size and capacitance value of each individual capacitor are identical, and the capacitance value of the individual capacitor is n times the capacitance value of the filter capacitor, n ≧ 2.
3. The IPD high-pass filter according to claim 2, wherein said filter capacitors are 4 and said resonant circuits are 3.
4. The IPD high pass filter according to any of claims 1 to 3, characterized in that the resonance circuit comprises a resonance inductance and a resonance capacitance, which are connected in series between the transmission line for connecting two adjacent filter capacitances and the ground pad.
5. The IPD high pass filter of claim 4, wherein the filter capacitance and the resonance capacitance are MIM structures.
6. The IPD high-pass filter of claim 4, wherein the resonant inductor is a planar spiral structure.
7. The IPD high-pass filter according to claim 1, wherein a ground port connected to the ground substrate through the ground copper pillar is disposed on each of both sides of the input port and the output port, and a top of the ground port is exposed on the protection layer.
8. The IPD high-pass filter of claim 1, wherein the input port and the output port are 100um x 100um in size, and the ground pad is 84um x 84um in size.
9. The IPD high-pass filter of claim 1, wherein the IPD high-pass filter has a size of 1.3mm x 0.7mm x 0.1mm.
10. The IPD high-pass filter according to claim 1, wherein the passband frequency of the IPD high-pass filter is 24GHz-40 GHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220817063.6U CN217563621U (en) | 2022-04-08 | 2022-04-08 | IPD high-pass filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202220817063.6U CN217563621U (en) | 2022-04-08 | 2022-04-08 | IPD high-pass filter |
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| CN217563621U true CN217563621U (en) | 2022-10-11 |
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| CN202220817063.6U Active CN217563621U (en) | 2022-04-08 | 2022-04-08 | IPD high-pass filter |
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