CN109802216A - Miniaturization Wilkinson power divider and preparation method thereof based on thin-film integration passive device technique - Google Patents
Miniaturization Wilkinson power divider and preparation method thereof based on thin-film integration passive device technique Download PDFInfo
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Abstract
Miniaturization Wilkinson power divider and preparation method thereof based on thin-film integration passive device technique, the invention belongs to microwave device fields, it is larger for the size for solving the Wilkinson power divider of existing plane cascade structure, the lower problem of device reliability.The circuit of Wilkinson power divider of the present invention is to pass through the RC filter being sequentially connected in series, No.1 transmission line equivalent elements, No. two transmission line equivalent elements between input port and No.1 output port to be connected；Pass through the RC filter being sequentially connected in series, No. three transmission line equivalent elements, No. four transmission line equivalent elements between input port and No. two output ports to be connected.The present invention carries out the manufacture of six layer film type passive integrated devices using micro-nano technology technology in GaAs wafer, so that size significantly reduces, the size of the Wilkinson power divider is only 1.5mm × 3mm × 0.65mm.And precision of manufacturing process of the invention is high, and device performance is stablized.
Description
Technical field
The invention belongs to microwave device fields, and in particular to a kind of minimized wide-band Wilkinson power divider and its system
Preparation Method.
Background technique
Wilkinson power divider be one kind input signal can be divided into be it is a kind of will input signal energy point all the way
At two-way or the passive device of the equal or unequal energy of multiple-channel output, important technological parameters power loss includes center frequency
Isolation and frequency bandwidth between rate, insertion loss, reflection loss, power distribution port etc..Power splitter is widely used in penetrating
Frequently/microwave front-end communication system, such as frequency mixer, multiplier, among power amplifier and aerial array.In order to meet people to logical
Letter system increasingly higher demands, miniaturization power splitter are the hot spots of a current research.
Weir gold can be increased using segment transmissions line, using the methods of right/left hand transmission line and additional isolation network
The frequency bandwidth of gloomy power splitter.Wherein most widely used method is using more piece topological network.Each section is by quarter-wave
Long line composition.However this more piece Wilkinson power divider based on microstrip line can occupy biggish circuit area, increase system
It causes this and increases additional insertion loss, and be not easy integrated with other circuit modules.
The common method for reducing area is to replace quarter-wave transmission line, this production using discrete component circuit
For method because its manufacture difficulty is low, Production Time is short, low in cost, but due to needing a large amount of device wire bondings that may increase additionally
Time cost and parasitic parameter.Other than using PCB processing technology, low-temperature co-fired ceramics (LTCC) technology and complementary metal
Oxide semiconductor (CMOS) technology is also widely used for manufacture power divider.LTCC technology is conducive to improve circuit system
Quality factor；Filament structural circuit of the line width less than 50 μm can be made；It is suitable for high current and high-temperature stability requirement, it can
To make the very high circuit substrate of the number of plies, and multiple passive elements can be embedded to the packing density for being wherein conducive to improve circuit.
However production cost will be greatly increased using LTCC technique, and be easy to cause burning if sintering densification speed is not easy matching
At metacoxal plate surface irregularity, warpage, layering, the adhesive force of metal line declines.CMOS technology can make modules
In the chips, it advantageously reduces cost and realizes chip miniaturization, technics comparing is complicated.
Summary of the invention
The purpose of the present invention is to solve the size of the Wilkinson power divider of existing plane cascade structure is larger,
The lower problem of device reliability, and the miniaturization Wilkinson power divider based on thin-film integration passive device technique is provided
And preparation method thereof.
Miniaturization Wilkinson power divider the present invention is based on thin-film integration passive device technique includes input port
Port1, No.1 output port port2, No. two output port port3, two RC filters and four transmission line equivalent elements, should
The circuit of miniaturization Wilkinson power divider be between input port port1 and No.1 output port port2 by according to
Secondary concatenated first RC filter, No.1 transmission line equivalent elements, No. two transmission line equivalent elements are connected, and wherein No.1 is transmitted
Line equivalent elements are by No.1 inductance L1, No.1 capacitor C1With No. two capacitor C2Form pi-network, No.1 capacitor C1One end with
No.1 inductance L1It is connected, No.1 capacitor C1The other end ground connection, No. two capacitor C2One end and No.1 inductance L1It is connected, No. two electricity
Hold C2The other end ground connection；No. two transmission line equivalent elements are by No. three inductance L3, No. five capacitor C5With No. six capacitor C6Form π type
Circuit, No. five capacitor C5One end and No. three inductance L3It is connected, No. five capacitor C5The other end ground connection, No. six capacitor C6One end
With No. three inductance L3It is connected, No. six capacitor C6The other end ground connection；
Between the input port port1 and No. two output port port3 by the 2nd RC filter that is sequentially connected in series,
No. three transmission line equivalent elements, No. four transmission line equivalent elements are connected, wherein No. three transmission line equivalent elements are by No. two electricity
Feel L2, No. three capacitor C3With No. four capacitor C4Form pi-network, No. three capacitor C3One end and No. two inductance L2It is connected, No. three electricity
Hold C3The other end ground connection, No. four capacitor C4One end and No. two inductance L2It is connected, No. four capacitor C4The other end ground connection；No. four
Transmission line equivalent elements are by No. four inductance L4, No. seven capacitor C7With No. eight capacitor C8Form pi-network, No. seven capacitor C7One
End and No. four inductance L4It is connected, No. seven capacitor C7The other end ground connection, No. eight capacitor C8One end and No. four inductance L4It is connected, eight
Number capacitor C8The other end ground connection；
There is first node a between No.1 transmission line equivalent elements and No. two transmission line equivalent elements, No. two transmission lines are equivalent
There are third node c, No. three transmission line equivalent elements and No. four transmission line equivalent elements between component and No.1 output port port2
Between have second node b, have fourth node d, first node between No. four transmission line equivalent elements and No. two output port port3
The first blocking resistance R is provided between a and second node b1, the second blocking electricity is provided between third node c and fourth node d
Hinder R2；
Multilayered structure is made by thin-film integration passive device technique in the miniaturization Wilkinson power divider.
First RC filter of the present invention is by resistance R3With capacitor C9It composes in parallel, the 2nd RC filter is by resistance R4
With capacitor C10It composes in parallel.The transmission line equivalent elements are to be connected by clipping the inductance component of series connection with ground connection
Capacitive element composition pi-network.
The present invention is based on the preparation methods of the miniaturization Wilkinson power divider of thin-film integration passive device technique to press
The following steps are realized:
One, cleaning and polishing treatment are carried out to substrate surface, obtains clean substrate；
Two, the first SiNx layer is deposited in clean substrate surface using chemical vapor deposition；
Three, NiCr layers are deposited on the first SiNx layer surface according to the circuit structure of miniaturization Wilkinson power divider,
Thin film resistor is obtained by photoetching process, after forming the first seed metal layer by sputtering, etches wafer with photoresist
To obtain the structure of bottom metal layers, then by electron beam evaporation formation bottom metal layers, bottom metal layers are as resistor
Pad, the bottom metal and spiral inductor of MIM capacitor；
Four, redeposited second SiNx layer, dielectric layer of second SiNx layer as capacitor, using reaction in bottom metal layers
Ion(ic) etching (RIE) removes resistance, capacitor, inductance port and the second SiNx layer for needing to connect air bridge portion, forms second
Deposition is used for the photoresist of air bridges after seed metal layer；
Five, the top metal deposition layer on second seed metal layer, air bridges of the metal layer at top as spiral inductor
With the top metal of MIM capacitor, then air bridges are made by reactive ion etching, are obtained after Passivation Treatment based on thin-film integration
The miniaturization Wilkinson power divider of passive device technique.
The present invention widens the bandwidth of Wilkinson power divider using more piece topological structure, and two section topological structures can provide two
A different resonance frequency point, to achieve the effect that widen working band under conditions of guaranteeing isolation.By to power splitter surprise
The analysis of moding circuit and even moding circuit, determines each section characteristic impedance and isolation resistance.Quarter-wave transmission line passes through two
The pi-network that capacitor and an inductance are constituted is replaced to reduce power splitter size.
The present invention increases RC filter in input terminal, to reduce reflection coefficient when low frequency, so that Weir of the present invention is golden
Working band may be implemented since DC in gloomy power splitter, allows relative bandwidth to be up to 200%, has further widened frequency.
Increased blocking resistance also can increase the isolation between two output ports.The present invention is based on thin-film integration passive device techniques
Miniaturization Wilkinson power divider centre frequency be 0.7GHz.
The present invention carries out the manufacture of six layer film type passive integrated devices using micro-nano technology technology in GaAs wafer,
Size is significantly reduced, the size of the Wilkinson power divider is only 1.5mm × 3mm × 0.65mm.And this hair
Bright precision of manufacturing process is high, and device performance is stablized, and high yield rate is low in cost, convenient for integrated with other circuit modules.It compares
Other processing technologys, the GaAs wafer that the present invention uses can reduce parasitic capacitance and inductive effect, improve spiral inductance and
The high-quality of MIM capacitor.
The thin film passive integrated device processing technology that the present invention uses, by spiral inductance, Film-mode resistor, MIM capacitor collection
At in 1.5 × 3mm2Circuit among, realize the miniaturization of broadband Wilkinson power divider, be easy to encapsulate and and other
Circuit module is integrated, and is effectively prevented from welding bring time cost and excess loss and uncertain parasitic parameter.This
Invent the Wilkinson power divider designed has preferable isolation on 10dB working band, and working band may be implemented
By 0GHz, 10dB working band is 0-1.4GHz, and relative bandwidth is up to 200%.Reflection loss is less than at centre frequency
15dB, interport isolation are less than 15dB, and the transmission coefficient of two output ports is about 4.1dB.Compared to based on microstrip structure, LTCC
Technique, CMOS structure and the IPD technique based on other substrates, the present invention use GaAs simultaneously, more to realize as substrate
The miniaturization of structure, size can reduce 90% or more.
Detailed description of the invention
Fig. 1 is that the present invention is based on the circuits of the miniaturization Wilkinson power divider of thin-film integration passive device technique
Figure；
Fig. 2 is the schematic partial cross-sectional view of miniaturization Wilkinson power divider of the present invention, and a represents substrate, b in figure
The first SiNx layer is represented, c represents bottom metal layers, and d represents the second SiNx layer, and e represents second seed metal layer, and f represents top
Metal layer, g represent passivation layer, and h represents the first seed metal layer, and x represents film resistor, and y represents MIM capacitor, and z represents spiral electricity
Sense；
Fig. 3 is the 3D structural schematic diagram of miniaturization Wilkinson power divider of the present invention；
Fig. 4 is miniaturization Wilkinson power divider of the present invention image under the microscope；
Fig. 5 is the S parameter test chart that embodiment middle width strip minimizes Wilkinson power divider, wherein 1 represents S11,2 are represented
S21,3 represent S31, and 4 represent S23.
Specific embodiment
Specific embodiment 1: miniaturization Wilkinson of the present embodiment based on thin-film integration passive device technique
Power splitter includes input port port1, No.1 output port port2, No. two output port port3, two RC filters and four
A transmission line equivalent elements, the circuit of the miniaturization Wilkinson power divider are exported in input port port1 and No.1
Pass through the first RC filter being sequentially connected in series, No.1 transmission line equivalent elements, No. two transmission line equivalent elements between the port2 of port
It is connected, wherein No.1 transmission line equivalent elements are by No.1 inductance L1, No.1 capacitor C1With No. two capacitor C2Pi-network is formed,
No.1 capacitor C1One end and No.1 inductance L1It is connected, No.1 capacitor C1The other end ground connection, No. two capacitor C2One end and No.1
Inductance L1It is connected, No. two capacitor C2The other end ground connection；No. two transmission line equivalent elements are by No. three inductance L3, No. five capacitor C5With
No. six capacitor C6Form pi-network, No. five capacitor C5One end and No. three inductance L3It is connected, No. five capacitor C5The other end ground connection,
No. six capacitor C6One end and No. three inductance L3It is connected, No. six capacitor C6The other end ground connection；
Between the input port port1 and No. two output port port3 by the 2nd RC filter that is sequentially connected in series,
No. three transmission line equivalent elements, No. four transmission line equivalent elements are connected, wherein No. three transmission line equivalent elements are by No. two electricity
Feel L2, No. three capacitor C3With No. four capacitor C4Form pi-network, No. three capacitor C3One end and No. two inductance L2It is connected, No. three electricity
Hold C3The other end ground connection, No. four capacitor C4One end and No. two inductance L2It is connected, No. four capacitor C4The other end ground connection；No. four
Transmission line equivalent elements are by No. four inductance L4, No. seven capacitor C7With No. eight capacitor C8Form pi-network, No. seven capacitor C7One
End and No. four inductance L4It is connected, No. seven capacitor C7The other end ground connection, No. eight capacitor C8One end and No. four inductance L4It is connected, eight
Number capacitor C8The other end ground connection；
There is first node a between No.1 transmission line equivalent elements and No. two transmission line equivalent elements, No. two transmission lines are equivalent
There are third node c, No. three transmission line equivalent elements and No. four transmission line equivalent elements between component and No.1 output port port2
Between have second node b, have fourth node d, first node between No. four transmission line equivalent elements and No. two output port port3
The first blocking resistance R is provided between a and second node b1, the second blocking electricity is provided between third node c and fourth node d
Hinder R2；
Multilayered structure is made by thin-film integration passive device technique in the miniaturization Wilkinson power divider.
Specific embodiment 2: the present embodiment is different from the first embodiment in that capacitor in transmission line equivalent elements
ValueInductance valueWherein ω0For resonance angular frequency, Z0Indicate feature resistance
Anti-, θ is the phase at resonance frequency.
Specific embodiment 3: the present embodiment is different from the first and the second embodiment in that in transmission line equivalent elements
Inductance element be spiral inductance, the capacity cell in transmission line equivalent elements is MIM (metal-dielectric-metal) formula capacitor.
Specific embodiment 4: the first RC filter unlike one of present embodiment and specific embodiment one to three
By resistance R3With capacitor C9It composes in parallel, the 2nd RC filter is by resistance R4With capacitor C10It composes in parallel.
Specific embodiment 5: miniaturization Wilkinson of the present embodiment based on thin-film integration passive device technique
The preparation method of power splitter follows these steps to implement:
One, cleaning and polishing treatment are carried out to substrate surface, obtains clean substrate a；
Two, the first SiNx layer b is deposited in clean substrate surface using chemical vapor deposition；
Three, NiCr layers are deposited on the first surface SiNx layer b according to the circuit structure of miniaturization Wilkinson power divider,
Thin film resistor is obtained by photoetching process, after forming the first seed metal layer h by sputtering, etches wafer with photoresist
To obtain the structure of bottom metal layers, then by electron beam evaporation formation bottom metal layers c, bottom metal layers c is as resistor
Pad, the bottom metal and spiral inductor of MIM capacitor；
Four, redeposited second dielectric layer of SiNx layer d, the second SiNx layer d as capacitor in bottom metal layers, using anti-
Answer ion(ic) etching (RIE) removal resistance, capacitor, inductance port and the second SiNx layer d for needing to connect air bridge portion, second
The photoresist for being used for air bridges is deposited after forming second seed metal layer e on SiNx layer d；
Five, the top metal deposition layer f on second seed metal layer e, air of the metal layer at top f as spiral inductor
The top metal of bridge and MIM capacitor, then air bridges are made by reactive ion etching, it is obtained after Passivation Treatment based on film collection
At the miniaturization Wilkinson power divider of passive device technique.
The circuit structure of miniaturization Wilkinson power divider described in present embodiment step 3 includes input terminal
Mouth port1, No.1 output port port2, No. two output port port3, two RC filters and four transmission line equivalent elements,
The circuit of the miniaturization Wilkinson power divider is passed through between input port port1 and No.1 output port port2
The first RC filter that is sequentially connected in series, No.1 transmission line equivalent elements, No. two transmission line equivalent elements are connected, and wherein No.1 passes
Defeated line equivalent elements are by No.1 inductance L1, No.1 capacitor C1With No. two capacitor C2Form pi-network, No.1 capacitor C1One end
With No.1 inductance L1It is connected, No.1 capacitor C1The other end ground connection, No. two capacitor C2One end and No.1 inductance L1It is connected, No. two
Capacitor C2The other end ground connection；No. two transmission line equivalent elements are by No. three inductance L3, No. five capacitor C5With No. six capacitor C6Form π
Type circuit, No. five capacitor C5One end and No. three inductance L3It is connected, No. five capacitor C5The other end ground connection, No. six capacitor C6One
End and No. three inductance L3It is connected, No. six capacitor C6The other end ground connection；
Between the input port port1 and No. two output port port3 by the 2nd RC filter that is sequentially connected in series,
No. three transmission line equivalent elements, No. four transmission line equivalent elements are connected, wherein No. three transmission line equivalent elements are by No. two electricity
Feel L2, No. three capacitor C3With No. four capacitor C4Form pi-network, No. three capacitor C3One end and No. two inductance L2It is connected, No. three electricity
Hold C3The other end ground connection, No. four capacitor C4One end and No. two inductance L2It is connected, No. four capacitor C4The other end ground connection；No. four
Transmission line equivalent elements are by No. four inductance L4, No. seven capacitor C7With No. eight capacitor C8Form pi-network, No. seven capacitor C7One
End and No. four inductance L4It is connected, No. seven capacitor C7The other end ground connection, No. eight capacitor C8One end and No. four inductance L4It is connected, eight
Number capacitor C8The other end ground connection；
There is first node a between No.1 transmission line equivalent elements and No. two transmission line equivalent elements, No. two transmission lines are equivalent
There are third node c, No. three transmission line equivalent elements and No. four transmission line equivalent elements between component and No.1 output port port2
Between have second node b, have fourth node d, first node between No. four transmission line equivalent elements and No. two output port port3
The first blocking resistance R is provided between a and second node b1, the second blocking electricity is provided between third node c and fourth node d
Hinder R2。
Present embodiment uses the emulation of ADS (Advanced Design system) software for circuit and laminate information.
The value of each electronic component is related to its physical size, by the internal diameter and circle number, MIM capacitor and film shape that change spiral inductance
The length and width dimensions of resistance can simply change the reactance value of each electronic component, there is biggish design freedom.Each port is
50 Ω matching impedances guarantee to be less than -10dB in working band reflection coefficient.
Compared with having the broadband Wilkinson power divider based on other technologies, present embodiment can be realized with working band
Since DC, bigger relative bandwidth is obtained.Using the Wilkinson power point of six layer structure passive integrated devices technology production
Orchestration, compared with using the Wilkinson power divider of plane cascade structure, can the occupied area of reduction circuit significantly,
Reduce the size of Wilkinson power divider.
Present embodiment using thin-film integration passive device (thin film integrated passive device,
TFIPD) technology.Diaphragm type resistance, metal-dielectric-metal (MIM) formula capacitor and spiral inductance can integrate in six layer structure
It manufactures.IPD device has the advantage that 1. size is smaller；2. it is low in cost, compared to using a large amount of discrete components to realize
The method of passive device, IPD can be with save the costs；3. improving system reliability, the uncertain parasitic ginseng generated by welding is reduced
Number.
Specific embodiment 6: present embodiment from unlike specific embodiment five in step 1 substrate a thickness
It is 600 μm~700 μm.
Specific embodiment 7: present embodiment substrate a in step 1 unlike specific embodiment five or six
Material is glass, monocrystalline silicon, GaAs, silicon carbide or sapphire.
Specific embodiment 8: unlike one of present embodiment and specific embodiment five to seven described in step 2
First SiNx layer b with a thickness of 0.2 μm.
Specific embodiment 9: step 2 unlike one of present embodiment and specific embodiment five to eight using etc.
Gas ions enhance chemical vapor deposition (PECVD) and deposit the first SiNx layer b in clean substrate surface.
Specific embodiment 10: unlike one of present embodiment and specific embodiment five to nine described in step 5
Passivation Treatment be on metal layer at top f deposit third SiNx layer as passivation layer g.
Embodiment one: the present embodiment includes input port port1, No.1 output port port2, No. two output ports
Port3, two RC filters and four transmission line equivalent elements, the circuit of the miniaturization Wilkinson power divider are defeated
Equivalent group of the first RC filter, No.1 transmission line between inbound port port1 and No.1 output port port2 by being sequentially connected in series
Part, No. two transmission line equivalent elements are connected, and wherein No.1 transmission line equivalent elements are by No.1 inductance L1, No.1 capacitor C1With
No. two capacitor C2Form pi-network, No.1 capacitor C1One end and No.1 inductance L1It is connected, No.1 capacitor C1The other end ground connection,
No. two capacitor C2One end and No.1 inductance L1It is connected, No. two capacitor C2The other end ground connection；No. two transmission line equivalent elements are by three
Number inductance L3, No. five capacitor C5With No. six capacitor C6Form pi-network, No. five capacitor C5One end and No. three inductance L3It is connected, five
Number capacitor C5The other end ground connection, No. six capacitor C6One end and No. three inductance L3It is connected, No. six capacitor C6The other end ground connection；
Between the input port port1 and No. two output port port3 by the 2nd RC filter that is sequentially connected in series,
No. three transmission line equivalent elements, No. four transmission line equivalent elements are connected, wherein No. three transmission line equivalent elements are by No. two electricity
Feel L2, No. three capacitor C3With No. four capacitor C4Form pi-network, No. three capacitor C3One end and No. two inductance L2It is connected, No. three electricity
Hold C3The other end ground connection, No. four capacitor C4One end and No. two inductance L2It is connected, No. four capacitor C4The other end ground connection；No. four
Transmission line equivalent elements are by No. four inductance L4, No. seven capacitor C7With No. eight capacitor C8Form pi-network, No. seven capacitor C7One
End and No. four inductance L4It is connected, No. seven capacitor C7The other end ground connection, No. eight capacitor C8One end and No. four inductance L4It is connected, eight
Number capacitor C8The other end ground connection；
There is first node a between No.1 transmission line equivalent elements and No. two transmission line equivalent elements, No. two transmission lines are equivalent
There are third node c, No. three transmission line equivalent elements and No. four transmission line equivalent elements between component and No.1 output port port2
Between have second node b, have fourth node d, first node between No. four transmission line equivalent elements and No. two output port port3
The first blocking resistance R is provided between a and second node b1, the second blocking electricity is provided between third node c and fourth node d
Hinder R2；
Multilayered structure is made by thin-film integration passive device technique in the miniaturization Wilkinson power divider.
The circuit diagram of the present embodiment is as shown in Figure 1.The wherein following C of the parameter of each element1=C2=C5=C6=2pf, C3
=C4=C7=C8=1pf, C9=C10=13.08pf, L1=L2=10.74nH, L3=L4=8.55nH, R1=130 Ω, R2=
200 Ω, R3=R4=30 Ω.
Embodiment two: miniaturization Wilkinson power divider of the present embodiment based on thin-film integration passive device technique
Preparation method follows these steps to implement:
One, cleaning and polishing treatment are carried out to GaAs wafer surface, to avoid the conductive base applied for high-speed microelectronic
The parasitic capacitance and inductive load of plate obtain clean substrate a；
Two, using plasma enhancing chemical vapor deposition (PECVD) deposits the first SiNx layer in clean substrate surface
B, so that surface is flat, convenient for growing other layers；
Three, according to the circuit structure of miniaturization Wilkinson power divider (see the circuit structure of embodiment one) first
The surface SiNx layer b deposits NiCr layers, obtains thin film resistor by photoetching process, forms the first seed metal layer h by sputtering
Afterwards, wafer is etched with photoresist form bottom metal layers to obtain the structure of bottom metal layers, then by electron beam evaporation
The pad of c, bottom metal layers c as resistor, the bottom metal and spiral inductor of MIM capacitor；
Four, redeposited second dielectric layer of SiNx layer d, the second SiNx layer d as capacitor in bottom metal layers, using anti-
Ion(ic) etching (RIE) removal resistance, capacitor, inductance port and the second SiNx layer d for needing to connect air bridge portion are answered, forms the
Deposition is used for the photoresist of air bridges after two seed metal layer e；
Five, the top metal deposition layer f on second seed metal layer e, metal layer at top (copper/layer gold) f are as spiral electricity
The air bridges of sensor and the top metal of MIM capacitor, then air bridges are made by reactive ion etching, it is obtained after Passivation Treatment
Miniaturization Wilkinson power divider based on thin-film integration passive device technique.
The material of the power splitter of the manufacture of passive integrated devices technology used in the present embodiment from bottom to up is first respectively
Layer is with a thickness of 650 μm, permittivity εr1=12.85 GaAs cell substrate.The second layer is to pass through plasma enhancing
It learns vapor deposition deposition and forms permittivity εr2Silicon nitride (SiNx) layer of=7.5 0.2 μ m-thick.Third layer be 25 Ω of precision/
Sq is used to manufacture chromaking nickel (NiCr) layer of film resistor.4th layer for bottom metal layers and with a thickness of 0.2 μm second
SiNx layer.Layer 5 is upper layer (top) metal layer.Layer 6 is to be used as passivation layer with a thickness of 0.3 μm of SiNx layer, with protection
Component is from oxidation and humidity.
Fig. 3 and Fig. 4 is a kind of structural representation for small sized wide-band IPD technology Wilkinson power divider that embodiment obtains
Figure.By simulation analysis it can be concluded that each discrete component represent impedance value and its shape between relationship.In the present embodiment
Applied spiral inductance central diameter is respectively 200 μm and 150 μm.Capacitance size is respectively 100 × 60 μm2、50×60μm2、
200×200μm2。
By Fig. 5 result it is found that the present embodiment small sized wide-band IPD technology Wilkinson power divider can be realized 10dB work
Making frequency band is 0~1.4GHz, and in working band, isolation is up to 27dB.The embodiment can realize miniaturization, and size is only
For 0.0035 λ0×0.0070λ0。
Claims (9)
1. the miniaturization Wilkinson power divider based on thin-film integration passive device technique, it is characterised in that film should be based on
The miniaturization Wilkinson power divider of integrated passive devices technique includes input port port1, No.1 output port
Port2, No. two output port port3, two RC filters and four transmission line equivalent elements, the miniaturization Wilkinson
The circuit of power splitter is the first RC filtering between input port port1 and No.1 output port port2 by being sequentially connected in series
Device, No.1 transmission line equivalent elements, No. two transmission line equivalent elements are connected, and wherein No.1 transmission line equivalent elements are by No.1
Inductance L1, No.1 capacitor C1With No. two capacitor C2Form pi-network, No.1 capacitor C1One end and No.1 inductance L1It is connected, No.1
Capacitor C1The other end ground connection, No. two capacitor C2One end and No.1 inductance L1It is connected, No. two capacitor C2The other end ground connection；Two
Number transmission line equivalent elements are by No. three inductance L3, No. five capacitor C5With No. six capacitor C6Form pi-network, No. five capacitor C5One
End and No. three inductance L3It is connected, No. five capacitor C5The other end ground connection, No. six capacitor C6One end and No. three inductance L3It is connected, six
Number capacitor C6The other end ground connection；
Pass through the 2nd RC filter being sequentially connected in series, No. three between the input port port1 and No. two output port port3
Transmission line equivalent elements, No. four transmission line equivalent elements are connected, wherein No. three transmission line equivalent elements are by No. two inductance L2、
No. three capacitor C3With No. four capacitor C4Form pi-network, No. three capacitor C3One end and No. two inductance L2It is connected, No. three capacitor C3's
Other end ground connection, No. four capacitor C4One end and No. two inductance L2It is connected, No. four capacitor C4The other end ground connection；No. four transmission lines
Equivalent elements are by No. four inductance L4, No. seven capacitor C7With No. eight capacitor C8Form pi-network, No. seven capacitor C7One end and four
Number inductance L4It is connected, No. seven capacitor C7The other end ground connection, No. eight capacitor C8One end and No. four inductance L4It is connected, No. eight capacitor C8
The other end ground connection；
There are first node a, No. two transmission line equivalent elements between No.1 transmission line equivalent elements and No. two transmission line equivalent elements
There is third node c between No.1 output port port2, between No. three transmission line equivalent elements and No. four transmission line equivalent elements
Have second node b, there is fourth node d between No. four transmission line equivalent elements and No. two output port port3, first node a with
The first blocking resistance R is provided between second node b1, the second blocking resistance is provided between third node c and fourth node d
R2；
Multilayered structure is made by thin-film integration passive device technique in the miniaturization Wilkinson power divider.
2. the miniaturization Wilkinson power divider according to claim 1 based on thin-film integration passive device technique,
It is characterized in that the inductance element in transmission line equivalent elements is spiral inductance, the capacity cell in transmission line equivalent elements is
MIM formula capacitor.
3. the miniaturization Wilkinson power divider according to claim 1 based on thin-film integration passive device technique,
It is characterized in that the first RC filter is by resistance R3With capacitor C9It composes in parallel, the 2nd RC filter is by resistance R4With capacitor C10And
Connection composition.
4. the system of the miniaturization Wilkinson power divider as described in claim 1 based on thin-film integration passive device technique
Preparation Method, it is characterised in that the preparation method follows these steps to realize:
One, cleaning and polishing treatment are carried out to substrate surface, obtains clean substrate (a)；
Two, the first SiNx layer (b) is deposited in clean substrate surface using chemical vapor deposition；
Three, NiCr layers are deposited on the first SiNx layer (b) surface according to the circuit structure of miniaturization Wilkinson power divider, led to
It crosses photoetching process and obtains thin film resistor, after forming the first seed metal layer (h) by sputtering, etch wafer with photoresist
To obtain the structure of bottom metal layers, then by electron beam evaporation formation bottom metal layers (c), bottom metal layers (c) are as electricity
Hinder the pad of device, the bottom metal and spiral inductor of MIM capacitor；
Four, redeposited second SiNx layer (d), dielectric layer of second SiNx layer (d) as capacitor, using anti-in bottom metal layers
Ion(ic) etching removal resistance, capacitor, inductance port and the second SiNx layer (d) for needing to connect air bridge portion are answered, forms second
Seed metal layer (e) deposits the photoresist for air bridges afterwards；
Five, the top metal deposition layer (f) on second seed metal layer (e), sky of the metal layer at top (f) as spiral inductor
The top metal of air bridge and MIM capacitor, then air bridges are made by reactive ion etching, it is obtained after Passivation Treatment based on film
The miniaturization Wilkinson power divider of integrated passive devices technique.
5. the miniaturization Wilkinson power divider according to claim 4 based on thin-film integration passive device technique
Preparation method, it is characterised in that substrate (a) with a thickness of 600 μm~700 μm in step 1.
6. the miniaturization Wilkinson power divider according to claim 4 based on thin-film integration passive device technique
Preparation method, it is characterised in that the material of substrate (a) is glass, monocrystalline silicon, GaAs, silicon carbide or sapphire in step 1.
7. the miniaturization Wilkinson power divider according to claim 4 based on thin-film integration passive device technique
Preparation method, it is characterised in that the first SiNx layer (b) described in step 2 with a thickness of 0.2 μm.
8. the miniaturization Wilkinson power divider according to claim 4 based on thin-film integration passive device technique
Preparation method, it is characterised in that step 2 using plasma enhances chemical vapor deposition in clean substrate surface deposition first
SiNx layer (b).
9. the miniaturization Wilkinson power divider according to claim 4 based on thin-film integration passive device technique
Preparation method, it is characterised in that Passivation Treatment described in step 5 is deposition third SiNx layer as passivation layer (g).
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| CN111834726A (en) * | 2020-07-28 | 2020-10-27 | 南京理工大学 | Broadband filtering power divider capable of realizing high power division ratio |
| CN114710138A (en) * | 2022-06-08 | 2022-07-05 | 成都嘉纳海威科技有限责任公司 | Multi-channel amplification attenuation phase-shift serial port control multifunctional chip |
| CN114976554A (en) * | 2022-06-21 | 2022-08-30 | 中国电子科技集团公司第五十五研究所 | P-waveband-based miniaturized high-power Wilkinson power divider |
| CN115603692A (en) * | 2022-11-24 | 2023-01-13 | 成都频岢微电子有限公司（Cn） | N77 frequency band miniaturization filtering power divider based on IPD (inverse diode) process |
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| CN110247146A (en) * | 2019-06-27 | 2019-09-17 | 北京邮电大学 | A kind of wideband power distributor chip based on thin-film integration passive element technology |
| CN110247146B (en) * | 2019-06-27 | 2020-11-03 | 北京邮电大学 | Broadband power divider chip based on thin film integrated passive element technology |
| CN111600575A (en) * | 2020-04-11 | 2020-08-28 | 复旦大学 | Input matching circuit based on multisection artificial transmission line |
| CN111834726A (en) * | 2020-07-28 | 2020-10-27 | 南京理工大学 | Broadband filtering power divider capable of realizing high power division ratio |
| CN111834726B (en) * | 2020-07-28 | 2022-04-19 | 南京理工大学 | Broadband filtering power divider capable of realizing high power division ratio |
| CN114710138A (en) * | 2022-06-08 | 2022-07-05 | 成都嘉纳海威科技有限责任公司 | Multi-channel amplification attenuation phase-shift serial port control multifunctional chip |
| CN114976554A (en) * | 2022-06-21 | 2022-08-30 | 中国电子科技集团公司第五十五研究所 | P-waveband-based miniaturized high-power Wilkinson power divider |
| CN115603692A (en) * | 2022-11-24 | 2023-01-13 | 成都频岢微电子有限公司（Cn） | N77 frequency band miniaturization filtering power divider based on IPD (inverse diode) process |
| CN115603692B (en) * | 2022-11-24 | 2023-03-10 | 成都频岢微电子有限公司 | N77 frequency band miniaturization filtering power divider based on IPD (inverse diode) process |
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