CN108777343B - Substrate integrated waveguide transmission structure, antenna structure and connection method - Google Patents
Substrate integrated waveguide transmission structure, antenna structure and connection method Download PDFInfo
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- CN108777343B CN108777343B CN201810520786.8A CN201810520786A CN108777343B CN 108777343 B CN108777343 B CN 108777343B CN 201810520786 A CN201810520786 A CN 201810520786A CN 108777343 B CN108777343 B CN 108777343B
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- 239000000758 substrate Substances 0.000 title claims abstract description 126
- 230000005540 biological transmission Effects 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 94
- 230000007704 transition Effects 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 3
- 238000004088 simulation Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
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- 230000008859 change Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
- H01Q13/106—Microstrip slot antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/0006—Particular feeding systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
- H01Q21/061—Two dimensional planar arrays
- H01Q21/064—Two dimensional planar arrays using horn or slot aerials
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- Variable-Direction Aerials And Aerial Arrays (AREA)
- Waveguides (AREA)
Abstract
The invention discloses a substrate integrated waveguide transmission structure, an antenna structure and a connection method, wherein the substrate integrated waveguide transmission structure comprises three metal layers and a row of first signal cutting structures, wherein the three metal layers are respectively a top metal layer, a middle metal layer and a bottom metal layer from top to bottom; the first signal cutting structure starts from the top metal layer and ends from the middle metal layer; and a first port for connecting the low-profile substrate integrated waveguide is formed between the middle metal layer and the bottom metal layer at one side of the first signal cutting structure, and a second port for connecting the high-profile substrate integrated waveguide is formed between the top metal layer and the bottom metal layer at the other side of the first signal cutting structure. The transmission structure solves the problem of interconnection between the board-level high-profile substrate integrated waveguide device and the radio frequency chip, and has the advantages of low cost, small size, board-level integration and the like.
Description
Technical Field
The invention relates to the fields of electronics, microwave radio frequency, radar and the like, in particular to a transmission structure, an antenna structure and a connection method between substrate integrated waveguides with different section heights.
Background
The substrate integrated waveguide (substrate integrated waveguide, SIW) is a novel guided wave structure which can be integrated in a medium substrate, and a plurality of metallized through holes are arranged in the medium substrate at certain intervals to form a substitute structure of the smooth side wall of the waveguide, so that a quasi-closed guided wave structure is formed by surrounding the upper surface metal and the lower surface metal, and the characteristics of low insertion loss, high power capacity and the like of the metal waveguide are maintained. Substrate integrated waveguides have been successfully used to design a variety of microwave structures such as substrate integrated waveguide antennas, filters, diplexers, power splitters, and the like.
The substrate integrated waveguide belongs to a height-reduced waveguide (the height is much lower than the width of the waveguide), the conventional metal waveguide is generally half of the width of the waveguide, and the SIW manufactured by adopting the dielectric substrate with a high section is beneficial to improving the power capacity of the SIW on one hand and improving the impedance bandwidth, gain and other performances of the antenna designed based on the SIW on the other hand.
In practical radio frequency systems, the chip often needs to be placed on a low-profile dielectric substrate, because the pins of the chip are generally connected with other circuits through microstrip lines or coplanar waveguides, and the space between adjacent pins of the chip is generally smaller, so that the signal lines connected with the chip cannot be too wide; for microstrip lines and coplanar waveguides with a characteristic impedance of 50 ohms, the thinner the substrate, the thinner the signal line will be.
Based on the above facts, in general, it is difficult for an antenna or other devices designed based on a high-profile substrate integrated waveguide to be directly connected to a radio frequency chip by a microstrip line or a coplanar waveguide on the same substrate, and if the width of the substrate integrated waveguide is reduced, the performance of the relevant devices such as the antenna is adversely affected. Therefore, the problem of interconnection between the chip and the high-profile circuit board is urgent and significant.
Disclosure of Invention
The invention aims to solve the problems that: the transmission structure solves the problem of interconnection between the board-level high-profile substrate integrated waveguide device and the radio frequency chip, and the scheme has the advantages of low cost, small size, board-level integration and the like.
In order to achieve the above object, the technical scheme of the present invention is as follows:
the utility model provides a substrate integrated waveguide transmission structure which characterized in that: the device comprises three metal layers and a row of first signal cutting structures, wherein the three metal layers are respectively a top metal layer, a middle metal layer and a bottom metal layer from top to bottom; the first signal cutting structure starts from the top metal layer and ends from the middle metal layer; and a first port for connecting the low-profile substrate integrated waveguide is formed between the middle metal layer and the bottom metal layer at one side of the first signal cutting structure, and a second port for connecting the high-profile substrate integrated waveguide is formed between the top metal layer and the bottom metal layer at the other side of the first signal cutting structure.
The first port is connected with a low-profile substrate integrated waveguide transmission line, the low-profile substrate integrated waveguide transmission line comprises a bottom metal layer, a middle metal layer, a medium between the two metal layers and two parallel rows of second signal cutting structures passing through the two metal layers, and the arrangement direction of the second signal cutting structures is perpendicular to the arrangement direction of the first signal cutting structures; the second port is connected with a high-profile substrate integrated waveguide transmission line, the high-profile substrate integrated waveguide transmission line comprises a bottom metal layer, a top metal layer, a medium between the two metal layers and two parallel rows of third signal cutting structures passing through the two metal layers, and the arrangement direction of the third signal cutting structures is perpendicular to the arrangement direction of the first signal cutting structures.
The high-profile substrate integrated waveguide transmission line further comprises fourth signal cutting structures, the fourth signal cutting structures are symmetrically distributed on two sides of the center line of the two rows of third signal cutting structures, the fourth signal cutting structures start from the first signal cutting structures, and the farther away from the first signal cutting structures, the farther away from the symmetry axis the fourth signal cutting structures are distributed.
The first signal cutting structure is a metallized hole or a metallized groove.
The second signal cutting structure is a metallized hole or a metallized groove; the third signal cutting structure is a metallized hole or a metallized groove.
The fourth signal cutting structure is a metallized hole or a metallized groove.
The transmission structure is realized through a multilayer printed circuit board process, under the multilayer printed circuit board process, the whole multilayer structure is respectively provided with a top metal layer, a first layer of medium substrate, a middle metal layer, an adhesive sheet, a second layer of medium substrate and bottom metal from top to bottom, and a second signal cutting structure forming a low-profile substrate integrated waveguide and a third signal cutting structure forming a high-profile substrate integrated waveguide are metalized through holes or grooves penetrating through the whole circuit structure; the first signal cutting structure is a blind hole or a groove with the top starting from the top metal layer and the bottom stopping from the middle metal layer.
The substrate integrated waveguide slot array antenna structure capable of being integrated with a radio frequency chip in a board level is characterized by comprising an antenna input end and an antenna radiation end; the antenna input port adopts a low-profile substrate integrated waveguide; the antenna radiation end adopts a high-profile substrate integrated waveguide, the end part of the high-profile substrate integrated waveguide is short-circuited, and the top of the high-profile substrate integrated waveguide is provided with a rectangular groove; the low-profile substrate integrated waveguide and the high-profile substrate integrated waveguide are connected by adopting any one of the transmission structures.
The space between the centers of adjacent rectangular grooves along the groove direction is half of the wave guide wavelength, and the intersection positions of the adjacent rectangular grooves are arranged on two sides of the central line of the high-profile substrate integrated waveguide.
A connection method of a substrate integrated waveguide slot array antenna structure and a radio frequency chip is characterized in that a low-profile substrate integrated waveguide adopts a transition structure from a substrate integrated waveguide to a microstrip transmission line or a substrate integrated waveguide to a coplanar waveguide to be transited to a fifty ohm microstrip line or a coplanar waveguide, and then the low-profile substrate integrated waveguide and the radio frequency chip are directly integrated on a circuit board.
Compared with the prior art, the invention has the technical effects that:
1. because the radio frequency chip needs to be surface-mounted on the low-profile dielectric substrate to ensure that the width of the signal wire which can be directly connected with the pin meets the size limit of the pin piece, the transmission structure provided by the invention realizes the transition of the high-low profile substrate integrated waveguide, can solve the problem of interconnection between the board-level high-profile substrate integrated waveguide device and the radio frequency chip, and has the advantages of low cost, small size, board-level integration and the like.
2. The fourth metallized holes symmetrically distributed on two sides of the center line of the two rows of the third metallized holes can compensate the discontinuity at the interface, thereby effectively improving the influence of signal discontinuity at the interface (namely the first metallized holes) of the low-profile substrate integrated waveguide and the high-profile substrate integrated waveguide due to abrupt change of the profile.
Drawings
FIG. 1 is a schematic diagram of a transmission structure between substrate integrated waveguides of different profile heights according to the present invention;
FIG. 2 is a schematic diagram of transmission structure layers between substrate integrated waveguides with different section heights according to the present invention;
FIG. 3 is a schematic diagram of a transmission structure between substrate integrated waveguides of different profile heights fabricated based on a PCB process according to the present invention;
FIG. 4 is a schematic diagram of a substrate integrated waveguide slot array antenna capable of being directly integrated with a radio frequency chip in a board level manner;
fig. 5 is a simulation result of a transmission structure between substrate integrated waveguides with different profile heights according to an embodiment of the present invention.
Fig. 6 is a simulation result of an example |s11| of a slot array antenna structure of a substrate integrated waveguide capable of being directly integrated with a radio frequency chip in a board-level manner according to the present invention.
Fig. 7 is a simulation result of an E-plane pattern of an example of a substrate integrated waveguide slot array antenna structure capable of being directly integrated with a radio frequency chip in a board-level manner.
Fig. 8 is a simulation result of an H-plane pattern of an example of a slot array antenna structure of a substrate integrated waveguide capable of being directly integrated with a radio frequency chip in a board-level manner.
Wherein: 1. a low profile substrate integrated waveguide transmission line; 2. a switching structure; 3. a high profile substrate integrated waveguide transmission line; 4. a top metal layer; 5. an intermediate metal layer; 6. a bottom metal layer; 7-10, metalized holes; 11. an interface; 12. metallizing the holes; 13. a first layer of dielectric substrate; 14. an adhesive sheet; 15. a second layer of dielectric substrate; 16. a slot array antenna; 17. rectangular grooves; 18. a transition structure from the substrate integrated waveguide to the microstrip transmission line; 19. fifty ohm microstrip line; 20. symmetry axis.
Detailed Description
The invention is described in further detail below with reference to the attached drawing figures:
as shown in fig. 1 and fig. 2, the substrate integrated waveguide switching structure 2 of the present invention, which is similar to the substrate integrated waveguide connecting two different profiles, comprises three metal layers and a row of metallized holes 12 (the side view structure of the metallized holes 12 is shown in fig. 2), wherein the three metal layers are respectively a top metal layer 4 from top to bottom, a middle metal layer 5 and a bottom metal layer 6, the metallized holes 12 start from the top metal layer 4 and end from the middle metal layer 5. Two ports are formed on two sides of the metallized hole 12, one port is positioned between the middle metal layer 5 and the bottom metal layer 6, is a low-profile substrate integrated waveguide structure and is connected with the low-profile substrate integrated waveguide transmission line 1; one port is located between the upper metal layer 4 and the lower metal layer 6, is a high-profile substrate integrated waveguide structure, and is connected with the high-profile substrate integrated waveguide transmission line 3. The low profile integrated waveguide transmission line 1 is parallel to the high profile integrated waveguide transmission line 3 and the intermediate metal layer 5 is on the side of the low profile integrated waveguide that is present only in the entire circuit board (i.e. in the region of the low profile integrated waveguide transmission line 1).
The longitudinal metallized holes 12, the hole diameter and hole spacing of which meet the corresponding requirements for the hole diameter and hole spacing in conventional integrated waveguide designs, are formed as an interface 11 of two profile highly integrated waveguides, the row of metallized holes 12 starting from the top metal layer 4 and ending in the middle metal layer 5 in the profile direction (side view configuration of the metallized holes 12 is shown in fig. 2. The center of the row of metallized holes is located at the interface 11 of the middle metal layer in the region of the transition structure between the high and low profile integrated waveguides. At the interface the transition structure is located within a certain length of the side of the high profile integrated waveguide transmission line 3 (this length is related to the operating frequency of the designed transmission structure, the length is about half the wavelength of the guided wave, optimized by commercial simulation software, so that both the |s11| and |s22| reach less than-15 dB in the required frequency band range), there are metallized holes 9 symmetrically distributed along the symmetry axis of the switching structure (the aperture and hole pitch of the metallized holes 9 meet the corresponding requirements of aperture and hole pitch in conventional substrate integrated waveguide designs, the tilt angle is related to the distribution length of the fourth metallized blind holes along the distribution direction of the third metallized holes, this distribution length is related to the operating frequency of the designed transmission structure, the initial value can be set to half the guided wave wavelength, and then optimized by commercial simulation software so as to achieve the best transmission effect in the required frequency band range), these metallized holes 9 start at the interface 11 and the farther from the interface 11, the center of these metallized holes 9 is from the symmetry axis in the switching structure 2 between high and low profile substrate integrated waveguides, the regions along the symmetry axis which are free of metallized blind holes are shaped like a triangle.
The low-profile substrate integrated waveguide transmission line 1 is composed of a bottom metal layer 6, an intermediate metal layer 5, a medium between the two metal layers and two parallel rows of metallized holes 7 passing through the two metal layers (the side view structure of the holes of the metallized holes 7 is shown in figure 2); the high-profile substrate integrated waveguide transmission line 3 is composed of a bottom metal layer 6, a top metal layer 4, a medium between the two metal layers and two parallel rows of metallized holes 10 passing through the two metal layers (the side view structure of the metallized holes 10 is shown in fig. 2);
the transmission structure can be realized by a multilayer printed circuit board process, under the multilayer printed circuit board process, the whole multilayer structure is respectively provided with a top metal layer 4, a first dielectric substrate 13, an intermediate metal layer 5, a paste sheet 14, a second dielectric substrate 15 and a bottom metal 6 from top to bottom, and metallized holes forming the low-profile substrate integrated waveguide and the high-profile substrate integrated waveguide are metallized through holes 10, namely the metallized holes penetrate through the whole circuit structure. The metallized holes 12 in the transfer structure are blind hole structures, the tops of the blind holes are from the top metal layer 4, and the bottoms of the blind holes are from the middle metal layer 5. The signal flow in the overall transmission structure is shown in dashed lines in fig. 3.
All the metallized holes (7, 9, 10, 12) constituting the substrate integrated waveguide can also be structured as metallized grooves.
The input port of the antenna adopts a low-profile substrate integrated waveguide 1, the radiation part of the antenna adopts a mode of forming a rectangular groove 17 at the top of the high-profile substrate integrated waveguide with one end short-circuited, wherein the space between the centers of adjacent rectangular grooves 17 along the groove direction is half of the guided wave wavelength, and the intersection of the adjacent rectangular grooves is arranged at two sides of the central line of the high-profile substrate integrated waveguide; the low-profile substrate integrated waveguide of the input port is connected with a slot array antenna 16 designed by adopting a high-profile substrate integrated waveguide by adopting a transmission structure 2 among the substrate integrated waveguides with different profile heights; the low profile substrate integrated waveguide of the input port is transitioned from a substrate integrated waveguide to microstrip transmission line transition structure 18 (or substrate integrated waveguide to coplanar waveguide transition structure) to a fifty ohm microstrip line 19 (or coplanar waveguide) and then can be directly integrated with the radio frequency chip on the circuit board.
In order to verify the performance of the transmission structure between the substrate integrated waveguides with different section heights and the substrate integrated waveguide slot array antenna structure capable of being directly integrated with a radio frequency chip in a board level, a transmission structure operating near 77GHz and an example of the substrate integrated waveguide slot array antenna structure based on the transmission structure are respectively designed based on the structure and the PCB technology, the transmission structure and the substrate integrated waveguide slot antenna layer structure are shown in figure 3, the substrate integrated waveguide slot antenna structure is shown in figure 4, wherein a first layer of dielectric substrate 16 is a microwave board with a dielectric constant of 3.0 and a thickness of 0.254mm, a bonding sheet 17 is a material with a dielectric constant of 3.54 and a thickness of 0.1mm, and a second layer of dielectric substrate 18 is a microwave board with a dielectric constant of 3.0 and a thickness of 0.127 mm. The simulation results of the transmission structure cases among the substrate integrated waveguides with different section heights are shown in fig. 5, and the simulation results of the relevant performance of one case of the substrate integrated waveguide slot array antenna structure capable of being directly integrated with a radio frequency chip in a board level mode are shown in fig. 6-8. The simulation results of fig. 5 show that the |s11| and the |s22| of the case transmission structure are smaller than-15 dB and the insertion loss is smaller than 1dB in the 75-80GHz range, and the results of fig. 6 show that the |s11| of the case substrate integrated waveguide slot antenna with the switching structure is smaller than-10 dB in the 76.8-79.5GHz range. The results of fig. 7 and 8 show that the case substrate integrated waveguide slot antenna obtains a normal radiation pattern; the effectiveness of the structure provided by the invention is proved by the results of related simulation experiments.
The above embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereto, and any modification made on the basis of the technical scheme according to the technical idea of the present invention falls within the protection scope of the present invention.
Claims (5)
1. The utility model provides a substrate integrated waveguide transmission structure which characterized in that: the device comprises three metal layers and a row of first signal cutting structures, wherein the three metal layers are respectively a top metal layer, a middle metal layer and a bottom metal layer from top to bottom; the first signal cutting structure starts from the top metal layer and ends from the middle metal layer; a first port for connecting the low-profile substrate integrated waveguide is formed between the middle metal layer and the bottom metal layer at one side of the first signal cutting structure, and a second port for connecting the high-profile substrate integrated waveguide is formed between the top metal layer and the bottom metal layer at the other side of the first signal cutting structure;
the first port is connected with a low-profile substrate integrated waveguide transmission line, the low-profile substrate integrated waveguide transmission line comprises a bottom metal layer, a middle metal layer, a medium between the two metal layers and two parallel rows of second signal cutting structures passing through the two metal layers, and the arrangement direction of the second signal cutting structures is perpendicular to the arrangement direction of the first signal cutting structures; the second port is connected with a high-profile substrate integrated waveguide transmission line, the high-profile substrate integrated waveguide transmission line comprises a bottom metal layer, a top metal layer, a medium between the two metal layers and two parallel rows of third signal cutting structures passing through the two metal layers, and the arrangement direction of the third signal cutting structures is perpendicular to the arrangement direction of the first signal cutting structures;
the high-profile substrate integrated waveguide transmission line further comprises fourth signal cutting structures which are symmetrically distributed on two sides of the center line of the two rows of third signal cutting structures, the fourth signal cutting structures start from the first signal cutting structures and are further away from the first signal cutting structures, and the fourth signal cutting structures are further away from the symmetry axis;
the first signal cutting structure is a metallized hole or a metallized groove;
the second signal cutting structure is a metallized hole or a metallized groove; the third signal cutting structure is a metallized hole or a metallized groove;
the fourth signal cutting structure is a metallized hole or a metallized groove.
2. The substrate integrated waveguide transmission structure of claim 1, wherein: the transmission structure is realized through a multilayer printed circuit board process, under the multilayer printed circuit board process, the whole multilayer structure is respectively provided with a top metal layer, a first layer of medium substrate, a middle metal layer, an adhesive sheet, a second layer of medium substrate and bottom metal from top to bottom, and a second signal cutting structure forming a low-profile substrate integrated waveguide and a third signal cutting structure forming a high-profile substrate integrated waveguide are metalized through holes or grooves penetrating through the whole circuit structure; the first signal cutting structure is a blind hole or a groove with the top starting from the top metal layer and the bottom stopping from the middle metal layer.
3. The substrate integrated waveguide slot array antenna structure capable of being integrated with a radio frequency chip in a board level is characterized by comprising an antenna input end and an antenna radiation end; the antenna input end adopts a low-profile substrate integrated waveguide; the antenna radiation end adopts a high-profile substrate integrated waveguide, the end part of the high-profile substrate integrated waveguide is short-circuited, and the top of the high-profile substrate integrated waveguide is provided with a rectangular groove; the transmission structure of claim 1 or 2 is used for connection between the low-profile substrate integrated waveguide and the high-profile substrate integrated waveguide.
4. The substrate integrated waveguide slot array antenna structure of claim 3, wherein the spacing between adjacent rectangular slot centers along the slot direction is half a guided wave wavelength, and adjacent rectangular slots are staggered on both sides of the high profile substrate integrated waveguide centerline.
5. A method for connecting a slot array antenna structure of a substrate integrated waveguide to a radio frequency chip as claimed in claim 3 or 4, wherein the low profile substrate integrated waveguide is formed by using a transition structure from the substrate integrated waveguide to a microstrip transmission line or from the substrate integrated waveguide to a coplanar waveguide to a fifty ohm microstrip line or coplanar waveguide, and then is directly integrated with the radio frequency chip on a circuit board.
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| CN109687071B (en) * | 2018-12-31 | 2020-11-20 | 瑞声科技（南京）有限公司 | Millimeter wave LTCC filter |
| KR20200085985A (en) * | 2019-01-07 | 2020-07-16 | 삼성전자주식회사 | Multi-mode transmission line and storage device comprising the same |
| WO2020199020A1 (en) * | 2019-03-29 | 2020-10-08 | 深圳市大疆创新科技有限公司 | Large-bandwidth coplanar feed antenna designed for a millimeter-wave radar system |
| CN114063014B (en) * | 2020-07-29 | 2024-06-11 | 华为技术有限公司 | Radar device and working equipment |
| CN114725068B (en) * | 2022-02-24 | 2023-11-28 | 中国电子科技集团公司第二十九研究所 | Low-profile three-dimensional integrated radio frequency module for maintaining high Q value of element |
| CN115494456B (en) * | 2022-11-21 | 2023-03-10 | 南京隼眼电子科技有限公司 | Radar transmitting/receiving device and radar device |
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| CN103165966A (en) * | 2011-12-14 | 2013-06-19 | 索尼公司 | Waveguide, interposer substrate including the same, module, and electronic apparatus |
| CN208173765U (en) * | 2018-05-28 | 2018-11-30 | 东南大学 | Substrate integration wave-guide transmission structure, antenna structure |
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| CN103165966A (en) * | 2011-12-14 | 2013-06-19 | 索尼公司 | Waveguide, interposer substrate including the same, module, and electronic apparatus |
| CN208173765U (en) * | 2018-05-28 | 2018-11-30 | 东南大学 | Substrate integration wave-guide transmission structure, antenna structure |
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