CN108182321A - It is a kind of that method is selectively inserted into based on planar electromagnetic bandgap structure - Google Patents
It is a kind of that method is selectively inserted into based on planar electromagnetic bandgap structure Download PDFInfo
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- CN108182321A CN108182321A CN201711456996.7A CN201711456996A CN108182321A CN 108182321 A CN108182321 A CN 108182321A CN 201711456996 A CN201711456996 A CN 201711456996A CN 108182321 A CN108182321 A CN 108182321A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
- G06F30/23—Design optimisation, verification or simulation using finite element methods [FEM] or finite difference methods [FDM]
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
Abstract
Method is selectively inserted into based on planar electromagnetic bandgap structure the invention discloses a kind of, for enhancing the inhibiting effect of simultaneous switching noise, a new EBG structure is designed first on the basis of fold-line-shaped period bridge, then the scattering properties of split-ring resonator is analyzed, CSRR resonators are embedded into the special element of EBG structures simultaneously, i.e., unit where noise source port and sensitive circuit port.Research shows that the structure can realize the inhibition for carrying out more than 40dB to SSN noises in the ultrabroad band of 0.9GHz to 36GHz.The method of the present invention can effectively widen the bandwidth of EBG structures, and enhancing inhibits depth, and is extracted the equivalent-circuit model of the structure, analyzes the design that its circuit performance and guides structure.
Description
Technical field
Method is selectively inserted into based on planar electromagnetic bandgap structure the present invention relates to a kind of, belongs to microwave technical field.
Background technology
With the rapid development of electronic technology, the communication technology and computer technology, the application of high-speed circuit system is increasingly
Extensively, different circuit modules such as digital circuit, analog circuit, radio circuit, microprocessor and memory etc. is all integrated in one
It rises, requirement of the system to high-performance and miniaturization is higher and higher.In order to which each circuit module is given to provide stable supply voltage, respectively
The different electronic component of kind is all directly or indirectly attached to power distribution network (the Power Distribution of system
Network, PDN) on, and in the design of high speed circuit, it needs using lower DC voltage and faster change rate come real
Existing Gbps grades of transient changing electric current, the operating frequency range of high speed circuit have also reached more than GHz ranks, and noise signal can be
It is propagated in PDN structures and the performance generation of other noise-sensitive circuits is seriously affected.For this purpose, solve noise in high speed circuit
The problems such as generating, propagate and interfering becomes most important in circuit design.
Simultaneous switching noise caused by transient current variation in PDN (Simultaneous Switching Noise,
SSN) it is one of most important noise source in PDN structures.The most basic method of processing SSN is exactly to be prevented from source
The generation of SSN.On the one hand, since digital integrated electronic circuit using logic gates switch switching realizes logic function, thus it is several
The generation of SSN can not possibly be prevented, even chip designer is also helpless；On the other hand, the frequency of SSN noises may prolong
20GHz is reached, and decoupling capacitor becomes perception at high frequencies, and the state of open circuit is presented, therefore increases under high frequency situations and go
The method of coupling capacitance is no longer applicable in.
Therefore, in the design of Modern High-Speed hybrid circuit system, since system performance, circuit level and structure are small-sized
The requirements such as change are continuously improved, and the SSN noise frequencies in PDN can reach more than 20GHz, based on traditional EBG
(Electromagnetic Band Gap electro-magnetic bandgaps) structure design PDN also has some limitations.
It is reported currently without pertinent literature, has similar technology in domestic and foreign literature, the increasing amount in broken line bridge EBG structures
The method of via increases bandwidth, but there are the serious Frequency point of noise transmission in stopband, stopband inhibits depth inadequate, and structure
It is complicated；The embedded small L-type bridge EBG units in L-type bridge EBG structures, can be in the frequency range of 510MHz~10.35GHz
The inhibition of realization -40dB, and structure size is 90 × 90 × 0.4mm3, size is too big.The structure size that the present invention designs is 45
×45×0.4mm3, it is not only simple in structure and is easily integrated, and size is smaller, meets the requirement of high-performance and miniaturization.
Invention content
The technology of the present invention solves the problems, such as：It overcomes the deficiencies of the prior art and provide a kind of based on plane electro-magnetic bandgap knot
Structure is selectively inserted into method, can realize in the ultrabroad band of 900MHz to 36GHz to SSN noises progress more than -40dB
Inhibit, effectively widen the bandwidth of EBG structures, enhance inhibition depth, and meet the requirement of miniaturized structure.
The technology of the present invention solution：It is a kind of that method is selectively inserted into based on plane EBG structures, in making an uproar for EBG structures
Embedded complementary split-rings resonator, i.e. CSRR resonators, then analyze the scattering of CSRR resonators near sound source and sensitive circuit
Characteristic, while CSRR resonators are embedded into noise source port and sensitive circuit port place unit in EBG structures；The EBG
Structure is broken line bridge plane EBG structures, i.e., two neighboring EBG units are connect using broken line bridging, to increase bridge inductance.
The EBG structures include three layers, are bus plane, dielectric layer and the stratum for etching EBG structures successively, wherein the electricity
Active layer and the stratum are copper sheet, and the dielectric layer is rectangular block.
The copper sheet is thick for 0.035mm.
The rectangle block size is 45 × 45 × 0.4mm3, material FR-4, dielectric constant 4.3, loss tangent is
0.02。
The interior patch length of the CSRR resonators is 1.8~5.8mm, preferably 3.8mm；Be open ring width for 0.5~
1.5mm, preferably 1mm.
EBG structures is made to introduce transmission zero in different Frequency points by the CSRR resonators of embedded Different structural parameters,
Increase bandwidth and degree of suppression.
The method of the embedded CSRR resonators is equally applicable to the EBG structures of other forms, such as direct-insert bridge joint EBG knots
Structure, as shown in Figure 10.
The equivalent-circuit model of the EBG structures consists of the following parts:The interior rectangular patch of the EBG units of embedded resonator
The equivalent capacity of piece, equivalent inductance, interior patch and the connecting bridge inductance of outer becket, the equivalent capacity of outer becket and equivalent electricity
The broken line connecting bridge capacitance and gap capacitance between broken line connecting bridge inductance, EBG units between sense, EBG units.
Advantage is the present invention compared with prior art：
(1) for the more traditional EBG structures of embedded EBG structures in the present invention, circuit structure size is not being increased
Under the premise of, it widens bandwidth of rejection and deepens stopband inhibition, the simultaneous switching noise in superfrequency frequency range can be inhibited.
(2) present invention is further analyzed EBG structures mechanism of production and electromagnetic property, and the EBG that Optimal improvements are traditional
Structure can effectively inhibit, and meet structure the SSN noises for the frequency range (3~30GHz) for extending to superfrequency
The requirement of miniaturization.
(3) present invention in EBG structures use mainstream common dielectric material FR-4, be not only easy to processing and cost compared with
Low, test result and simulation result coincide substantially.
(4) the embedded EBG structures that the present invention designs can flexibly change CSRR resonance according to the difference of actual noise frequency
The size of each parameter of device is to reach good noise suppression effect, therefore future still has stronger practical value.
(5) present invention designed by EBG structures can realize in the ultrabroad band of 0.9GHz to 36GHz to SSN noises into
The inhibition of row more than -40dB.The broken line bridge EBG structure -30dB bandwidth that the embedding grammar is not used is 1.1GHz~21.53GHz,
And occurs unstable resonant frequency point in stopband, it may appear that noise transmission is seriously and the problems such as outside radiation interference signals.
(6) present invention can effectively widen the bandwidth of EBG structures, and enhancing inhibits depth, and is extracted the equivalent of the structure
Circuit model analyzes the design that its circuit performance and guides structure.
Description of the drawings
Fig. 1 is the method for the present invention design flow diagram；
Fig. 2 middle polyline bridge EBG structure diagrams of the present invention；
The EBG structure diagrams of resonator are optionally embedded into Fig. 3 present invention；
Two neighboring broken line bridge EBG structural units (a) and schematic equivalent circuit (b) in Fig. 4 present invention；
Resonator and the adjacent EBG structural units (a) of embedded resonator and equivalent circuit (b) are not embedded into Fig. 5 present invention
Schematic diagram；
The S parameter simulation result schematic diagram of Fig. 6 middle polyline bridge EBG structures of the present invention；
The structure diagram of resonator pattern is etched in Fig. 7 present invention below 50 ohm microstrip transmission lines；
The simulation result schematic diagram that different scale resonant devices influence the transmission characteristic of microstrip transmission line in Fig. 8 present invention；
The S parameter simulation result schematic diagram of the EBG structures of embedded CSRR resonators in Fig. 9 present invention；
The direct-insert connecting bridge EBG structure diagrams of embedded CSRR resonators in Figure 10 present invention；
The simulation result contrast schematic diagram of embedded front and rear direct-insert connecting bridge EBG structures in Figure 11 present invention.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and embodiments.
The present invention solves the problems, such as the noise suppressed in high speed circuit from another angle, although SSN can not be prevented to make an uproar
The generation of sound, it is contemplated that SSN noises need to propagate by certain medium, are in turn coupled to sensitive circuit module, especially
It is power/ground planes, it can be considered to inhibit noise transmission on noise coupling path, designs the EBG structures of ultrabroad band
Noise in PDN is inhibited.All EBG structures mentioned in the present invention are all plane EBG structures.
As shown in Fig. 2, specific method of the present invention is in the noise source of the periodical broken line bridge EBG structures of one 3 × 3 and quick
Embedded CSRR resonators near inductive circuit.In order to facilitate statement, it is collectively referred to as EBG structures, each unit in EBG structures the inside herein
Referred to as EBG units；The EBG structures are bus plane, dielectric layer and the stratum for etching EBG structures successively, wherein electricity by up of three layers
Active layer and stratum are the copper sheets of 0.0035mm thickness, and dielectric layer is 45 × 45 × 0.4mm3Rectangular block, dielectric layer is thinner, parasitic electricity
Sense effect is smaller, and the rejection of SSN noises is better, and actual processing condition minimum can only achieve 0.4mm, material FR-4,
Dielectric constant is 4.3, loss tangent 0.02, can effectively further widen the bandwidth of EBG structures, and it is deep to enhance inhibition
Degree.
The emphasis that the pattern in power plane is the present invention is etched, the innovative point that the present invention is emphasized is also embodied in etching
It is detailed introduction below in the shape of pattern and the size of each unit parameter.The structure of the present invention is based on broken line bridge plane EBG
Structure, broken line bridge EBG structures are as shown in Fig. 2, be a kind of all identical periodic pattern of shapes and sizes, two neighboring EBG is tied
Structure unit is connected together by broken line bridging.On the basis of this structure, the present invention is embedded in CSRR resonance near power port
Device, in the stopband occurred in Fig. 6 result of the tests it is possible that noise transmission seriously and outside radiation interference signals it is humorous
Vibration frequency point, is optionally embedded into resonator, as shown in figure 3, patch length d is 3.8mm in resonator, opening ring width g is
1mm。
The principle of the present invention and design basis is given below
(1) theoretical foundation
A) equivalent-circuit model
When the length of EBG structural units is compared with operating frequency wavelength to be ignored, EBG structures are functionally equivalent to
One low-pass filter being made of lumped-circuit, the lumped parameter of these circuit elements include parallel plate capacitor Cp, wide conductor
Loop inductance Lp, connecting bridge micro-strip line capacitance Cb, connecting bridge localized inductance Lb, the gap between adjacent metal patch couples electricity
Hold Cg.Design parameter can be provided by following formula：
Lb=lenkln (2 π h/w)
Wherein ξ0And μ0For the dielectric constant and magnetic conductivity of free space, ξrFor relative dielectric constant, S is inner ring area, h
Dielectric thickness between power plane and ground level, len are the length of microstrip line, and w is line width, and k is constant, and l is EBG patches
The length of side of unit, periods of the p for EBG units, gaps of the g between adjacent cells.
As shown in (a) in Fig. 4, the equivalent-circuit model between adjacent EBG structural units, wherein between adjacent cells
It is adopted as broken line bridging to connect, the equivalent inductance value that broken line connecting bridge can increase bridge reaches the low cutoff frequency for reducing noise suppressed
The purpose of rate.For simplifying the analysis, equivalent-circuit model is divided into three parts composition：First part is described with equivalent capacity CPWith
Inductance LPPropagation characteristic between the EBG units and ground level of expression, second part describe bridge inductance Lb, bridge capacitance CbIt represents
Connecting bridge effect, Part III described with gap capacitance CgFor the edge effect between two adjacent cells of representative.Even
The bridge capacitance C connectbWith gap capacitance CgIt can ignore, because very big in frequency range.Therefore equivalent circuit can be reduced to
Resonance circuit model, Cpl、LplAnd LblEquivalent capacity, equivalent inductance and the connecting bridge between EBG units and ground level are represented respectively
Inductance, as shown in (b) in Fig. 4, the lower limiting frequency of EBG structures can be generated by the resonant frequency of LC resonance device：
Shown in (a) in equivalent-circuit model such as Fig. 5 in EBG structures after embedded resonator element, Cpm、LpmAnd Lbm
Equivalent capacity, equivalent inductance and the connecting bridge inductance of embedded unit, C are represented respectivelypr、LprRepresent the capacitance of embedded unit outer shroud
And inductance, it can be found that two resonant tanks in the equivalent circuit shown in (b) in Figure 5, the two resonant frequencies can be by
The following formula provides:
In conclusion there are three resonance frequencies altogether between the EBG structure adjacent cells of insertion resonator that the present invention designs
Rate point, due to the presence of these resonance loops, the SSN noises between power/ground planes will flow to ground by resonance circuit, because
Noise cannot continue to propagate and effectively inhibited outward in the loop for this.Finally, stopband lower-cut-off frequency can represent
For：
fL=min (fll,flm,flr)
B) slab guide is theoretical
With the raising of working frequency, operation wavelength be reduced to circuit structure size it is comparable when, above-mentioned analysis resonance
The equivalent circuit method of frequency is no longer applicable in.It is at this time the rational way of comparison using parallel-plate waveguide model.Parallel-plate
The upper cut off frequency of model is first mode of resonance of the resonator that patch is formed.In fact, the power supply of power distribution network/
Ground level is to constituting a parallel-plate waveguide.In addition, a kind of practical power plane has limited width, length and minimum
Dielectric thickness, therefore the wave for traveling to waveguide edge front and rear can reflect, and resonant frequency can be provided by following formula：
Wherein, μ and ξ is respectively the magnetic conductivity and dielectric constant of dielectric material, and m and n represent waveguide modulus, and a is power supply/ground
The width of plane, b are the length of power/ground planes.First resonant frequency can be expressed as：
For above-mentioned EBG structures altogether comprising three kinds of resonators, i.e. broken line bridge unit patch, Q-RING patch and embedded
Unit patch.With lower limiting frequency on the contrary, the upper cut off frequency of entire EBG structures is the maximum value of first resonant frequency, by
Following formula provides：
fH=max (ffirst)
(2) basis of software
In the design process, Ansoft-HFSS softwares are mainly utilized in the present invention.
Exemplary simulation software Ansoft HFSS based on finite element are first commercialized three-dimensional structure electromagnetism in the world
Field simulation software can analyze the electromagnetic field of high frequency of emulation Arbitrary 3 D passive structures, can directly obtain characteristic impedance, propagate often
The results such as several, S parameter and electromagnetic field, radiation field, antenna radiation pattern.The software is widely used in wireless and wire communication, meter
The fields such as calculation machine, satellite, radar, semiconductor and microwave integrated circuit, aerospace.Ansoft HFSS use adaptive mesh
The patented technologies such as subdivision, ALPS rapid frequency-sweepings, tangential member are integrated with the modeling of industrial standard, provide it is powerful, make
With flexible macrolanguage, intuitive preprocessor and exclusive field computation device, computable analysis show the electromagnetic field of various complexity,
And arbitrary parameter can be optimized using Optimetrics and scanning analysis.The present invention has studied EBG structures using HFSS
Influence of the geometric dimension of unit to its transmission characteristic, is optimized by HFSS simulation softwares, obtains the physical size of each unit.
(3) design procedure
Step 1：Under the premise of 3 × 3 cell EBG structures are determined, broken line bridge EBG as shown in Figure 2 is built in HFSS
Structural model is made of upper, middle and lower-ranking, is bus plane, dielectric layer and stratum successively, wherein stratum is plane, and bus plane is carved
Lose EBG units, 15 × 15mm of unit size2, boundary condition is set as desired metallic conductor, dielectric material FR-4, dielectric
Constant is 4.3, loss tangent 0.02；Port 1 and port 2 are set, and driving source selects lump port, and except EBG structures
One 75 × 75 × 30mm is set3Big air box, each plane of the box are not less than 15mm to EBG structures；Air cartridge
Boundary condition is set as radiation boundary condition, and frequency sweeping ranges are 100MHz~40GHz, emulate the transmission coefficient between two-port
S21, simulation result is as shown in fig. 6, as seen from the figure, if using -30dB as noise suppressed standard, broken line bridge EBG structures can be
Inhibit noise in 1.10-21.53GHz frequency ranges.But there is peak value in the resonant frequency point near 8GHz and 22GHz, in-
Above and below 30dB critical points, transmission coefficient S21 is larger, and noise transmission is serious or even can generate electromagnetic radiation.
Step 2：To being analyzed in the scattering properties of conventional microstrip transmission line loading CSRR resonators, Fig. 7 expressions are passing
In circuit design of uniting, microstrip transmission line loads the structure type of CSRR resonators.As shown in fig. 7, CSRR resonators etching is existed
On stratum metal covering below dielectric material, top layer is microstrip transmission line, by microstrip transmission lines and the center of circle of CSRR resonators
Keep symmetrical.Wherein medium uses FR-4 materials, and relative dielectric constant 4.4, loss angle tangent 0.02, dielectric thickness is
0.8mm.In order to reduce the loss of microstrip transmission line as possible, input/output port keeps impedance matching, and line characteristic impedance is
50 ohm, the width that microstrip transmission line is obtained in calculating is 2.36mm.The interior patch length of side d of resonator structure is 1.8~5.8mm,
It is best by a large amount of repetition test 3.8mm, and effect is best, and it is 0.5~1.5mm that resonator opening ring width, which is g, through excessive
It is best to measure repetition test 1mm, and effect is best, the resonator for establishing Different structural parameters is scattered the calculating of characteristic with dividing
Analysis.Result of calculation is as shown in figure 8, as seen from the figure, microstrip line by resonator due to being influenced near some frequency point to occur
Resonance shows certain stopband characteristic.On the other hand, as patch length d becomes larger, between microstrip line and resonator over the ground
Capacitance, connecting bridge inductance capacitance also accordingly become larger, the resonant frequency that resonator can be obtained by the calculation formula of resonant frequency is corresponding
Ground reduces.
Step 3：According to step 1 analyze as a result, analysis broken line bridge EBG structures existing for limitation, step 1
Find that peak value is larger near 8GHz resonant frequency points in stopband in the result of the test of Fig. 6, it is possible that noise transmission is serious
The problem of with outside radiation interference signals, therefore select suitable resonator in step 2, i.e. resonance frequency point is near 8GHz
Resonator is embedded into the power port and sensitive circuit near ports of broken line bridge EBG structures, obtains EBG structures as shown in Figure 3,
The transmission coefficient S21 between two-port is emulated equally on HFSS, the results are shown in Figure 9 for S parameter, as seen from the figure, if with -40dB
For noise suppressed standard, novel embedded broken line bridge EBG structures can inhibit noise in 0.9-36GHz frequency ranges, widen
While bandwidth of rejection, depth is inhibited to also become larger.And improve the peak of the appearance of the resonant frequency point near 8GHz and 22GHz
Value problem, the region near 8GHz Frequency points, noise suppressed depth maximum can reach 110dB, eliminate broken line bridge EBG structures
Potential electromagnetic radiation.
Step 4：Verify the validity and reasonability of above-mentioned optimization method.The same resonator of structure size is embedded into
In traditional direct-insert bridge joint EBG structures, EBG structures as shown in Figure 10 are obtained, the setting of port is led to as a upper trifle
The noise suppressed performance of the simulation calculation structure is crossed, embedded front and rear simulation result is as shown in figure 11, the results showed that, embedded resonance
The direct-insert bridge joint EBG structures bandwidth of rejection of device has also obtained widening largely, direct-insert bridge joint EBG structures-
40dB bandwidth is 1.95GHz~9.55GHz, and -40dB the bandwidth for being embedded in the EBG structures of resonator is 1.58GHz~20GHz；
Noise suppression effect also greatly increases, and maximum inhibition depth, maximum suppression depth can be equally implemented around in 8GHz
For -120dB, the validity and reasonability of above-mentioned optimization method are fully demonstrated.
Above example is provided just for the sake of the description purpose of the present invention, and is not intended to limit the scope of the present invention.This
The range of invention is defined by the following claims.It the various equivalent replacements that do not depart from spirit and principles of the present invention and make and repaiies
Change, should all cover within the scope of the present invention.
Claims (8)
1. a kind of be selectively inserted into method based on planar electromagnetic bandgap structure, it is characterised in that：EBG structures noise source and
Then embedded complementary split-rings resonator, i.e. CSRR resonators near sensitive circuit analyze the scattering properties of CSRR resonators, together
When CSRR resonators are embedded into EBG structures unit where noise source port and sensitive circuit port；The EBG structures are folding
Line bridge plane EBG structures, i.e., two neighboring EBG units are connect using broken line bridging, to increase bridge inductance.
A kind of method is selectively inserted into based on planar electromagnetic bandgap structure 2. according to claim 1, it is characterised in that：
The EBG structures include three layers, are bus plane, dielectric layer and the stratum for etching EBG structures successively, wherein the bus plane and institute
Stratum is stated as copper sheet, the dielectric layer is rectangular block.
A kind of method is selectively inserted into based on planar electromagnetic bandgap structure 3. according to claim 2, it is characterised in that：
The copper sheet is thick for 0.035mm.
A kind of method is selectively inserted into based on planar electromagnetic bandgap structure 4. according to claim 2, it is characterised in that：
The rectangle block size is 45 × 45 × 0.4mm3, material FR-4, dielectric constant 4.3, loss tangent 0.02.
A kind of method is selectively inserted into based on planar electromagnetic bandgap structure 5. according to claim 1, it is characterised in that：
The interior patch length of the CSRR resonators is 1.8~5.8mm, preferably 3.8mm；Opening ring width is 0.5~1.5mm, preferably
1mm。
A kind of method is selectively inserted into based on planar electromagnetic bandgap structure 6. according to claim 1, it is characterised in that：
EBG structures is made to introduce transmission zero in different Frequency points by the CSRR resonators of embedded Different structural parameters, increase bandwidth
With degree of suppression.
A kind of method is selectively inserted into based on planar electromagnetic bandgap structure 7. according to claim 1, it is characterised in that：
The method of the embedded CSRR resonators is equally applicable to the EBG structures of other forms, including direct-insert bridging structure.
A kind of method is selectively inserted into based on planar electromagnetic bandgap structure 8. according to claim 1, it is characterised in that：
The equivalent-circuit model of the EBG structures consists of the following parts：The equivalent capacity of the interior square patch of embedded unit, equivalent electricity
Folding between sense, interior patch and the connecting bridge inductance of outer becket, the equivalent capacity of outer becket and equivalent inductance, EBG units
Broken line connecting bridge capacitance and gap capacitance between line connecting bridge inductance, EBG units.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109951180A (en) * | 2019-03-12 | 2019-06-28 | 广东工业大学 | A kind of digital acoustics switch based on non-Hermitian system |
| CN112738975A (en) * | 2020-11-16 | 2021-04-30 | 西安电子科技大学 | Mixed electromagnetic band gap structure based on three-dimensional L-shaped bridge |
| CN114757143A (en) * | 2022-06-16 | 2022-07-15 | 飞腾信息技术有限公司 | Decoupling capacitor selection method and device, server and readable storage medium |
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| CN102630127A (en) * | 2012-04-01 | 2012-08-08 | 北京航空航天大学 | Embedded snake-shaped plane electromagnetic bandgap structure and construction method thereof |
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| CN102630127A (en) * | 2012-04-01 | 2012-08-08 | 北京航空航天大学 | Embedded snake-shaped plane electromagnetic bandgap structure and construction method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109951180A (en) * | 2019-03-12 | 2019-06-28 | 广东工业大学 | A kind of digital acoustics switch based on non-Hermitian system |
| CN109951180B (en) * | 2019-03-12 | 2023-01-10 | 广东工业大学 | Digital acoustic switch based on non-Hermite system |
| CN112738975A (en) * | 2020-11-16 | 2021-04-30 | 西安电子科技大学 | Mixed electromagnetic band gap structure based on three-dimensional L-shaped bridge |
| CN114757143A (en) * | 2022-06-16 | 2022-07-15 | 飞腾信息技术有限公司 | Decoupling capacitor selection method and device, server and readable storage medium |
| CN114757143B (en) * | 2022-06-16 | 2022-09-27 | 飞腾信息技术有限公司 | Decoupling capacitor selection method and device, server and readable storage medium |
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