CN105633025A - High insulation and voltage resistance power semiconductor module - Google Patents
High insulation and voltage resistance power semiconductor module Download PDFInfo
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- CN105633025A CN105633025A CN201410602961.XA CN201410602961A CN105633025A CN 105633025 A CN105633025 A CN 105633025A CN 201410602961 A CN201410602961 A CN 201410602961A CN 105633025 A CN105633025 A CN 105633025A
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Abstract
The invention discloses a high insulation and voltage resistance power semiconductor module, and belongs to the technical field of power semiconductor module manufacturing. The invention mainly solves problems that the manufacturing of a conventional high insulation and voltage resistance power module is low in rate of finished products and is very low in production efficiency. The module is mainly characterized in that a part, corresponding to a chip, of a heat-dissipation bottom plate is provided with a circular boss; the bottom of a housing is provided with a housing bottom surface integrated with a side wall, and the housing bottom surface is provided with a circular through hole; the height of the circuit boss is greater than the thickness of the housing bottom surface, and the diameter of the circuit boss is less than the diameter of an insulating thermal conducting piece; an insulating plate is disposed between the chip and a pressure plate; and the insulating thermal conducting piece, the lower end of an electrode, the chip and a pressure block are located in a silica gel or silicone rubber layer. The insulation withstand voltage of the module reaches 4500V or more, and the module can meet the demands for the high insulation withstand voltages in soft start, variable frequency and reactive compensation equipment, achieves high-efficiency production, and is mainly used for batch production.
Description
Technical field
The invention belongs to power semiconductor modular manufacturing technology field. Particularly relate to one and be applied to power electronic equipment, not only insulation module is required height, and the power semiconductor modular of efficiently production can be met.
Background technology
At present, power semiconductor modular is mostly made up of solidifying (rubber) glue-line of the silicon filled in shell, radiating bottom plate, electrode, chip, insulating heat-conductive sheet, briquetting, pressing plate, trip bolt, gate pole sheet and shell, and insulating pressure is typically in 2500V(AC value). extensive application along with environment protection energy-saving equipment, primary voltage improves constantly, there is 380V, 660V, 1100V system, at soft starter for motor, frequency conversion, reactive-load compensation equipment manufactures field, and the resistance to pressure request of semiconductor device is more and more higher, power semiconductor modular is as the critical component in equipment, 2200V repetitive peak voltage can not meet demand, if adopting block coupled in series technology, needs consider all problems such as pressure, cost increases, equipment volume increases, so generally adopting the repetitive peak above high-pressure modular of voltage 2500V just can solve the problems referred to above well at present, but dielectric strength does not often reach requirement between this modular manufacture technology chip and radiating bottom plate, the measure taked at present: a kind of method is to increase insulating heat-conductive layer thickness and smears the insulant such as silicone rubber at key position and solve, but this method thermal resistance can increase, through-current capability just reduces, additionally it cannot be guaranteed that stable yield rate, another method is to increase base plate insulation film (patent 201220273618.1), although this method can increase insulation voltage, but thin film location and installation bother very much, and production efficiency is very low.
Summary of the invention
The purpose of the present invention is aiming at above-mentioned weak point and provides a kind of height insulation Breakdown Voltage Power semiconductor module meeting and efficiently producing, the demand that power semiconductor modular has in the equipment such as soft start, frequency conversion and reactive-load compensation high insulation pressure can either be met, production efficiency can be improved again.
The technical solution of the present invention is: a kind of high insulation Breakdown Voltage Power semiconductor module, including the Silica hydrogel filled in shell, cover plate, radiating bottom plate, electrode, chip, aluminium backing, insulating heat-conductive sheet, briquetting, gate pole assembly, auxiliary cathode, insulation board, cushion block, pressing plate, trip bolt, gate pole sheet, gate pole block and shell or silastic-layer, it is characterised in that: position corresponding with chip on described radiating bottom plate is provided with round boss; Described outer casing bottom is provided with the enclosure bottom being connected as a single entity with sidewall, and this enclosure bottom is provided with the manhole corresponding with round boss, is just sleeved on round boss; The height of described round boss is more than the thickness of enclosure bottom, and round boss diameter is less than the diameter of insulating heat-conductive sheet; It is provided with insulation board between described chip and pressing plate; Described insulating heat-conductive sheet, electrode lower end, chip and briquetting are respectively positioned in Silica hydrogel or silastic-layer.
Round boss described in the technical solution of the present invention can be connected as a single entity with radiating bottom plate.
Round boss described in the technical solution of the present invention can also is that the aluminium backing being installed on radiating bottom plate.
Shell described in the technical solution of the present invention, insulation board are PBT material or the shell of PPS material, insulation board.
The diameter of the insulating heat-conductive sheet described in the technical solution of the present invention is equal to the diameter of electrode lower end with chip contact site.
Insulating heat-conductive sheet described in the technical solution of the present invention is Be2O3/Al2O3The insulating heat-conductive sheet of/AlN/DBC material.
Chip described in the technology of the present invention solution is the IGCT for electric and electronic power device or rectifier tube chip.
Due to the fact that on the basis of existing power semiconductor modular, position corresponding with chip on radiating bottom plate is provided with round boss, outer casing bottom has circular hole, just it is enclosed within boss, radiating bottom plate surface around round boss is provided with enclosure bottom, the height of this round boss is more than enclosure bottom thickness, round boss diameter is less than the diameter of insulating heat-conductive sheet, insulation board it is provided with between chip and pressing plate, insulating heat-conductive sheet, electrode lower end, chip and briquetting are respectively positioned in Silica hydrogel or silastic-layer, thus without increasing insulating heat-conductive layer thickness or smearing silastic material at key position, also without patch dielectric film, can make the insulation between electrode and radiating bottom plate pressure >=4500V, the single tube meeting different electric pressures can be manufactured, series connection, common-anode or common cathode module. the present invention can adopt IGCT or the rectifier tube chip of any electric pressure, while main purpose is in that the insulation of raising module is pressure, improve production efficiency, after taking this technology, when ensureing that insulating heat-conductive sheet is not crushed, can suitable thinning insulating heat-conductive layer thickness to reduce thermal resistance and to improve through-current capability, it is not required that base plate dielectric film, easy for installation efficiently. the present invention has makes power semiconductor modular insulation pressure reach more than 4500V, it is possible to meet and module has in the equipment such as soft start, frequency conversion and reactive-load compensation the high pressure demand that insulate, and meet the feature efficiently produced. present invention is mainly used for the batch of the power semiconductor modular in the power electronic equipment of high insulating requirements efficiently to produce.
Accompanying drawing explanation
In order to become apparent from that technical solution of the present invention is described, in below embodiment being described, the required accompanying drawing used is briefly introduced. Obviously, drawings discussed below is only some embodiments of the invention, to those skilled in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the vertical section structural map of present configuration.
Fig. 2 is the structural representation of radiating bottom plate of the present invention.
Fig. 3 is the top view of Fig. 2.
Fig. 4 is shell schematic diagram of the present invention.
Fig. 5 is Be of the present invention2O3/Al2O3The insulating heat-conductive sheet schematic diagram of/AlN material.
Fig. 6 is the inside electrical connection graph that the present invention can manufacture.
Fig. 7 is the insulating heat-conductive sheet sectional structural map of the DBC material of the present invention.
In figure: 1, radiating bottom plate, 2, shell, 3, aluminium backing, 4, insulating heat-conductive sheet, 5, electrode, 6, chip, 7, briquetting, 8, gate pole assembly, 10, auxiliary cathode, 11, insulation board, 12, cushion block, 13, pressing plate, 14, cover plate, 15, gate pole block, 16, gate pole sheet, 17, pan head screw, 18, trip bolt, 19, Silica hydrogel or silastic-layer, 20, the upper copper clad layers of DBC, 21, DBC dielectric ceramic layer, 22, copper clad layers under DBC.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the embodiment of the present invention is fully described by. Obviously, described embodiment is only a part of embodiment of the present invention, rather than whole embodiments. Any based on embodiments of the invention, all other embodiments that those skilled in the art obtain under the premise not making creative work, broadly fall into the scope of protection of the invention.
Present configuration is as shown in Figures 1 to 7. height of the present invention insulation Breakdown Voltage Power semiconductor module includes shell 2, cover plate 14, radiating bottom plate 1, electrode 5, chip 6, aluminium backing 3, insulating heat-conductive sheet 4, briquetting 7, gate pole assembly 8, auxiliary cathode 10, insulation board 11, cushion block 12, pressing plate 13, trip bolt 18, gate pole sheet 16, the Silica hydrogel filled in gate pole block 15 and shell or silastic-layer 19, wherein, shell 2 used, cover plate 14, radiating bottom plate 1, electrode 5, chip 6, aluminium backing 3, insulating heat-conductive sheet 4, briquetting 7, gate pole assembly 8, auxiliary cathode 10, insulation board 11, cushion block 12, pressing plate 13, pan head screw 17, trip bolt 18, gate pole sheet 16, essentially identical with existing power semiconductor modular of the Silica hydrogel filled in gate pole block 15 and shell or silastic-layer 19. the difference is that: position corresponding with chip 6 on radiating bottom plate 1 is provided with round boss, radiating bottom plate 1 surface around boss is provided with shell 2, it is connected as a single entity with sidewall bottom shell 2, has the manhole corresponding with round boss bottom shell 2, be just enclosed within round boss, round boss can be connected as a single entity with radiating bottom plate, it is also possible to is the aluminium backing being installed on radiating bottom plate 1, the height H1 of round boss is more than the thickness H2 of enclosure bottom, and round boss diameter of phi 1 is less than the diameter of phi 2 of insulating heat-conductive sheet 4, insulation board 11 it is provided with between chip 6 and pressing plate 13, insulating heat-conductive sheet 4, electrode 5 lower end, chip 6 and briquetting 7 are respectively positioned in Silica hydrogel or silastic-layer 19, chip 6 is the IGCT for electric and electronic power device or rectifier tube chip, shell 2, insulation board 11 are PBT material or the shell of PPS material, insulation board, the diameter of insulating heat-conductive sheet 4 is equal to the diameter of electrode 5 lower end with chip 6 contact site.
First with fluid sealant, shell 2 is bonded on radiating bottom plate 1, after adhesive curing to be sealed, radiating bottom plate 1 is sequentially placed aluminium backing 3, insulating heat-conductive sheet 4, then it is electrode 5, chip 6, briquetting 7, gate pole assembly 8, auxiliary cathode 10, insulation board 11, cushion block 12, pressing plate 13 successively, compress with trip bolt 18, gate pole assembly 8 and auxiliary cathode 10 are connected to gate pole sheet 16, then gate pole sheet 16 is injected gate pole block 15, again gate pole block 15 is fixed on shell 2, after perfusion Silica hydrogel or silastic-layer 19, then cover plate 14 is contained on shell 2. Chip 6 if diode, then cancels auxiliary cathode, gate lead and gate pole sheet.
Module can be the single tube of IGCT, series connection, common-anode or common cathode module, it is also possible to is the single tube of diode, series connection, common-anode or common cathode module, it is also possible to is IGCT and the series connection of diode mixing, common-anode or common cathode module.
Insulating heat-conductive sheet 4 is Be2O3/Al2O3The insulating heat-conductive sheet of/AlN/DBC material. DBC structure is copper clad layers 22 under copper clad layers 20, DBC on the DBC on DBC dielectric ceramic layer 21 and upper and lower surface thereof.
Manufacturing process:
1, chip: can be selected for the IGCT of any electric pressure and diode chip for backlight unit;
2, module assembled: radiating bottom plate, aluminium backing, insulating heat-conductive sheet, electrode, chip, briquetting, gate pole assembly, auxiliary cathode, insulation board, cushion block etc. are fitted together successively, compresses with pressing plate and trip bolt;
3, fastening: pressurize with forcing press, by various compressing parts;
4, encapsulation: seal with fluid sealant between shell 2 and radiating bottom plate 3, welds gate pole sheet 14, room temperature or 50��80 DEG C of solidifications of heating, 4��10 hours hardening times; Silica hydrogel, 50��80 DEG C of solidifications of heating, 4��10 hours hardening times is irrigated in shell 2;
5, high temperature storage: store more than 72 hours in 70��100 DEG C of baking ovens;
6, test: test the parameters such as the repetitive peak voltage of product, gate pole, pressure drop, insulation voltage, on state current with various equipment.
Insulation voltage Viso:4500V
Example of the present invention is only the one in numerous model, and other model structure is similar with it.
The above, be only presently preferred embodiments of the present invention, and the present invention not does any pro forma restriction. Therefore every without departing from present disclosure, to any amendment made for any of the above embodiments, equivalent replacement, equivalence change and modify according to the technical spirit of the present invention, all still fall within the scope of technical solution of the present invention protection.
Claims (7)
1. one kind high insulation Breakdown Voltage Power semiconductor module, including shell (2), cover plate (14), radiating bottom plate (1), electrode (5), chip (6), aluminium backing (3), insulating heat-conductive sheet (4), briquetting (7), gate pole assembly (8), auxiliary cathode (10), insulation board (11), cushion block (12), pressing plate (13), trip bolt (18), gate pole sheet (16), the Silica hydrogel filled in gate pole block (15) and shell or silastic-layer (19), it is characterized in that: be provided with round boss at the upper position corresponding with chip of described radiating bottom plate (1), described shell (2) bottom is provided with the enclosure bottom being connected as a single entity with sidewall, and this enclosure bottom is provided with the manhole corresponding with round boss, is just sleeved on round boss, the height of described round boss is more than the thickness of enclosure bottom, and round boss diameter is less than the diameter of insulating heat-conductive sheet (4), it is provided with insulation board (11) between described chip (6) and pressing plate (13), described insulating heat-conductive sheet (4), electrode (5) lower end, chip (6) and briquetting (7) are respectively positioned in Silica hydrogel or silastic-layer (19).
2. high insulation Breakdown Voltage Power semiconductor module according to claim 1, it is characterised in that: described round boss can be connected as a single entity with radiating bottom plate.
3. high insulation Breakdown Voltage Power semiconductor module according to claim 1, it is characterised in that: described round boss can also is that the aluminium backing being installed on radiating bottom plate (1).
4. the height insulation Breakdown Voltage Power semiconductor module according to claim 1,2 or 3, it is characterised in that: described shell (2), insulation board (11) they are PBT material or the shell of PPS material, insulation board.
5. the height insulation Breakdown Voltage Power semiconductor module according to claim 1,2 or 3, it is characterised in that: the diameter of described insulating heat-conductive sheet (4) is equal to the diameter of electrode (5) lower end with chip (6) contact site.
6. the height insulation Breakdown Voltage Power semiconductor module according to claim 1,2 or 3, it is characterised in that: described insulating heat-conductive sheet (4) is Be2O3/Al2O3The insulating heat-conductive sheet of/AlN/DBC material.
7. the height insulation Breakdown Voltage Power semiconductor module according to claim 1,2 or 3, it is characterised in that: described chip (6) is the IGCT for electric and electronic power device or rectifier tube chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410602961.XA CN105633025A (en) | 2014-10-31 | 2014-10-31 | High insulation and voltage resistance power semiconductor module |
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| CN201410602961.XA CN105633025A (en) | 2014-10-31 | 2014-10-31 | High insulation and voltage resistance power semiconductor module |
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| CN105633025A true CN105633025A (en) | 2016-06-01 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109003965A (en) * | 2018-08-24 | 2018-12-14 | 齐齐哈尔齐力达电子有限公司 | Thyristor module component |
| CN111261619A (en) * | 2019-11-22 | 2020-06-09 | 湖北台基半导体股份有限公司 | Suspension crimping power semiconductor module |
| CN112311251A (en) * | 2020-09-18 | 2021-02-02 | 威海新佳电子有限公司 | Rectifier module |
| CN113899992A (en) * | 2021-09-29 | 2022-01-07 | 天津市捷威动力工业有限公司 | Core cladding insulation voltage resistance test standard formulation method with gel diaphragm |
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| CN2606964Y (en) * | 2003-01-22 | 2004-03-17 | 齐齐哈尔电力半导体器件厂 | Insulation type high power electric semiconductor module |
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| CN202633265U (en) * | 2012-06-12 | 2012-12-26 | 湖北台基半导体股份有限公司 | High-dielectric voltage-withstanding power semiconductor module |
| CN204216019U (en) * | 2014-10-31 | 2015-03-18 | 湖北台基半导体股份有限公司 | High dielectric voltage withstand power semiconductor modular |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109003965A (en) * | 2018-08-24 | 2018-12-14 | 齐齐哈尔齐力达电子有限公司 | Thyristor module component |
| CN109003965B (en) * | 2018-08-24 | 2023-12-08 | 齐齐哈尔齐力达电子有限公司 | Thyristor module assembly |
| CN111261619A (en) * | 2019-11-22 | 2020-06-09 | 湖北台基半导体股份有限公司 | Suspension crimping power semiconductor module |
| CN112311251A (en) * | 2020-09-18 | 2021-02-02 | 威海新佳电子有限公司 | Rectifier module |
| CN113899992A (en) * | 2021-09-29 | 2022-01-07 | 天津市捷威动力工业有限公司 | Core cladding insulation voltage resistance test standard formulation method with gel diaphragm |
| CN113899992B (en) * | 2021-09-29 | 2023-06-13 | 天津市捷威动力工业有限公司 | Method for formulating insulation and voltage withstand test standard of core package with gel diaphragm |
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