JP2003017658A - Power semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power semiconductor module having excellent cooling performance, which module decreasing a spike voltage and induced noise generated by a large voltage drop and switching occurring when electric power is supplied. SOLUTION: This device comprises a first insulating substrate 2 having first metal plates 3a and 3b, at least one semiconductor element 5 mounted on the first metal plate 3b of the first insulating substrate 2, wherein the element 5 has a bevel structure having an acute angle between the end surface and the upper surface thereof to prevent the potential rise at the upper surface side; and a second insulating substrate 9 having a second metal plates 10a joined to the upper surface of the semiconductor element 5.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor device used as a power converter for controlling power, such as an inverter, and particularly to, for example, a diode, a power MOSFET, a power transistor, an IGBT.
The present invention relates to a power semiconductor module or the like that incorporates a semiconductor element such as (insulated gate bipolar transistor).

[0002]

2. Description of the Related Art Recently, in the field of power electronics, there is a demand for higher performance and smaller size of power supply equipment. In response to this demand, power semiconductor elements used in power supply devices have been required to have high breakdown voltage and large current, as well as low loss, high speed, and high breakdown resistance. In addition, modularization is also in progress, in which a plurality of semiconductor elements are connected according to their uses and purposes and these are housed in a single package.

FIG. 9 is a sectional view of a main part of a conventional power semiconductor device (power semiconductor module). The structure of this device will be described below. On the heat dissipation substrate 101 made of aluminum (Al), copper (Cu), or the like,
An insulating substrate 102 having metal thin plates 103b and 103a made of Cu or the like on its upper and lower surfaces is fixed and provided by a bonding material 104a such as solder. Further, the insulating substrate 105 having the upper and lower metal thin plates 106b and 106a of Cu or the like attached at a position slightly apart from this is the bonding material 104b such as solder.
Is fixedly provided on the heat dissipation board 101.
These insulating substrates 102 and 105 are made of alumina (Al2O).
3) and aluminum nitride (AlN).

On the thin metal plate 103b attached to the upper surface of the insulating substrate 102, the collector external electrode terminal 107 is provided.
And the lower surface is the collector electrode 108 and the upper surface is the emitter electrode 1.
And a power semiconductor element 110 such as a diode which is 09. Each thin metal plate 103b
Connection with the conductive bonding material 111b, 111b such as solder
It is performed by a. As a result, the collector external electrode terminal 107 and the collector electrode 108 are connected to the metal thin plate 103b.
Electrically connected via. The outer peripheral portion of the power semiconductor element 110 has a junction termination structure such as a guard ring.

On the other hand, the metal thin plate 106b is connected to the emitter electrode 109 by a metal wire 112 such as an Al wire. The external electrode terminal 115 for the emitter is further connected to the thin metal plate 106b via a conductive bonding material 111c. As a result, the emitter electrode 109 and the emitter external electrode terminal 115 are electrically connected.

These components on the heat dissipation board 101 are covered with an envelope 113 provided on the heat dissipation board 101. A molding material 114 such as silicone gel is sealed inside the envelope 113 to prevent moisture. Further, the upper ends of the collector external electrode terminal 107 and the emitter electrode terminal 115 penetrate the envelope 113 and are taken out to the outside.

In the semiconductor module configured as described above, a large current flows through the power semiconductor device 110. Therefore, a large amount of heat is generated in the power semiconductor element 110.

[0008]

However, in the power semiconductor device (power semiconductor module) configured as described above, the heat generated by the operation of the power semiconductor module is difficult to dissipate, and the semiconductor element is overheated. However, there was a problem that the heat destruction. In addition, there are problems that a large voltage drop occurs during energization, and spike voltage / induced noise occurs during switching.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a power semiconductor module capable of exhibiting excellent cooling performance. An object of the present invention is to provide a power semiconductor module capable of reducing a large voltage drop generated by energization and a spike voltage / induced noise generated by switching.

[0010]

A power semiconductor device according to the present invention includes a first insulating substrate having a first metal plate, and the first insulating substrate mounted on the first metal plate.
At least one semiconductor element having a bevel structure for suppressing an increase in potential on the upper surface side with an acute angle formed between the end surface and the upper surface, and the upper surface of the semiconductor element are joined to the upper surface of the semiconductor element, and the upper surface of the semiconductor element is at the end of the semiconductor element. A second insulating substrate having a second metal plate on the upper surface side of the semiconductor element, the second insulating substrate being bonded to the semiconductor element via an insulator.
Is configured to include.

The power semiconductor device of the present invention is configured such that a first heat dissipation substrate is further provided on the outer surface of the first insulating substrate.

In the power semiconductor device of the present invention, at least one of the junction between the semiconductor element and the first insulating substrate and the junction between the semiconductor element and the second insulating substrate is conductive. It is configured as being made of the joining material of.

The power semiconductor device of the present invention is configured to use at least one of a solder paste, a solder bump, a metal ball bump, and a conductive resin as the conductive bonding material.

In the power semiconductor device of the present invention, a circuit member electrically connected to the semiconductor element is mounted on a surface of the second insulating substrate different from the surface to which the semiconductor element is bonded. Configured as Alternatively, the power semiconductor device of the present invention is configured such that a heat dissipation substrate is further provided on a surface of the second insulating substrate different from the surface to which the semiconductor element is bonded.

The power semiconductor device of the present invention is configured such that the first heat dissipation substrate and the second heat dissipation substrate are coupled to each other so that heat can be transferred to each other.

In the power semiconductor device of the present invention, the semiconductor element comprises a plurality of semiconductor elements, and the first metal plate and the second metal plate are circuits for electrically connecting the plurality of semiconductor elements. Configured as being configured as a pattern.

In the power semiconductor device of the present invention, the plane shape of the semiconductor element is rectangular.

The power semiconductor device of the present invention is constructed such that the apex of the upper surface portion of the semiconductor element is constituted by a curved line.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION A power semiconductor device (power semiconductor module) used as an embodiment of the present invention is
It is possible to realize heat radiation not only from the lower surface of the power semiconductor element (chip) but also from the upper surface thereof without causing new problems such as discharge, leakage, short circuit, and melting.
Furthermore, in addition to this, it is intended to reduce the voltage drop that occurs when the power semiconductor module is energized, and the spike voltage and induced noise that occur when the module is switched. Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) FIG. 1 is a sectional view of a main portion of a power semiconductor module to which the present invention is applied.

First, the structure of the power module will be described.

As shown in FIG. 1 (a), a heat dissipation board (heat sink) 1 made of aluminum (Al), copper (Cu) or the like is provided with metal thin plates 3b, 3a of Cu or the like on the upper and lower surfaces thereof. The insulating substrate 2 of No. 1 is mounted. The first insulating substrate 2 is made of alumina (Al2O3) or aluminum nitride (AlN) having good thermal conductivity. The thin metal plate 3a and the heat dissipation board 1 are joined by a joining material 4 such as solder.

A power semiconductor element (diode) 5 having an emitter electrode 7 on the upper surface and a collector electrode 6 on the lower surface is mounted on the thin metal plate 3b. The collector electrode 6 is electrically joined to the thin metal plate 3b by the conductive joining material 8. The electrodes 6 and 7 are made of, for example, Au or Al, or a laminated metal film.

A second insulating substrate 9 made of alumina (Al2O3), aluminum nitride (AlN), or the like is mounted on the emitter electrode 7 for radiating heat from the semiconductor element 5 from above. A metal thin plate 10a made of Cu or the like is attached to the lower surface of the second insulating substrate 9, and is bonded to the emitter electrode 7 via this metal thin film 10a. This thin metal plate 10
The a and the emitter electrode 7 are joined by a conductive bonding material 11 such as a solder paste or a conductive resin. Thereby, the heat generated in the semiconductor element 5 is efficiently transferred to the second insulating substrate 9 via the emitter electrode 7 and the thin metal plate 10a. In the solder paste, when the solder is reflowed, the displacement of the emitter electrode 7 and the metal thin plate 10a, the displacement of the collect electrode 6 and the metal thin plate 3b, etc. are intrinsically corrected by the surface tension of the solder. Since it has a self-alignment effect, it has high reliability as well as productivity.

The thin metal plate 10a is connected to an emitter external electrode terminal (not shown) by a lead wiring board (metal plate) (not shown) such as a bus bar.

In the above structure, the power semiconductor element 5 has the bevel structure 12 in which the angle θ between the end face and the upper face is an acute angle, as can be seen from FIG. 1 (b). Hereinafter, this will be described in detail with reference to FIG.

FIG. 1B shows an enlarged sectional view of the power semiconductor element 5. The power semiconductor element 5 is composed of an n + type collector layer 5a, an n− type base layer 5b, and a p type emitter layer 5c. A collector electrode 6 is provided on the lower surface of the n + type collector layer 5a, and an emitter electrode 7 is provided on the upper surface of the p type emitter layer 5c. The end surface of the power semiconductor element 5 has the bevel structure 12. That is, in the present invention, as described above, while adopting a new configuration to realize that the heat generated in the semiconductor element 5 is efficiently released, a new defect such as a leak or a short circuit occurs. One feature is that it has been devised in advance so that it will not occur. The reason for adopting the bevel structure 12 in this way is as follows.

If the power semiconductor element 5 has, for example, a guard ring structure at the end instead of the bevel structure 12, a metal thin plate 10a is mounted on the emitter electrode 7 as shown in FIG. 1 (a). Configuration becomes difficult. That is, in FIG. 1B, when the power semiconductor element 5 is in the off state, a high voltage is applied to the collector electrode 6.
If a tip having a guard ring structure is adopted as the tip 5, the equipotential lines in the tip 5 are convex downward, so that the voltage at the edge A on the upper surface of the substrate is the same voltage as the collector electrode 6 and becomes a high voltage. Become. Therefore, as can be seen from FIGS. 1B and 1A, when the insulating substrate 9 with the metal thin plate 10a is provided on the emitter electrode 7 of such a chip, the end portion A
A large potential difference is generated between the metal thin plate 10a and the metal sheet 10a via the insulator, and discharge or leak current is generated.

In order to prevent this, in FIG.
It is theoretically possible to use an additional component such as a spacer electrode between the emitter electrode 7 and the thin metal plate 10a. However, with such a configuration, the thickness d in FIG. 1A becomes large, and the ease of assembling the power semiconductor module is impaired. Therefore,
It is not realistic to adopt such a structure.

Here, as shown in FIG.
These problems can be solved at the same time by forming the end surface of the bevel structure 12. That is, the bevel structure 12
In, the equipotential lines in the chip 5 spread flat or convex upward, and the potential rise on the upper surface of the chip 5 is suppressed. Therefore, the edge A on the upper surface of the substrate in FIG.
Has the same zero voltage (ground voltage) as the emitter electrode 7, and the potential difference between the end portion A and the thin metal plate 10a becomes 0, as can be seen from FIGS. 1 (a) and 1 (b). Therefore, even if the insulating plate 9 with the metal thin plate 10a is joined onto the emitter electrode 7, the above-mentioned problems such as leakage and short circuit between the end portion A and the metal thin plate 10a do not occur. Further, in the joining of the emitter electrode 7 and the thin metal plate 10a, it is possible to use a solder paste, a conductive resin, or the like as the conductive bonding material 11, so that the thickness d in FIG. 1A can be reduced. Yes, and therefore no problems with the assembly. As the bevel structure 12, not only the single positive bevel as in the present embodiment but also the power semiconductor element 5 is used.
You may use the bevel structure (double structure) which has a positive bevel on both the upper surface and lower surface.

Here, as a power semiconductor element, FIG.
As shown in (c), it is also possible to use a quadrangular chip 13 having a quadrangular planar shape of the element 5 and having a bevel structure in which the end surface of the element 5 is inclined. By using the square chip 13, the area efficiency when the chip is mounted in the module can be maintained at the conventional value. The corner portion (vertex) B of this square chip 13 is shown in FIG.
It may be curved like (c). This can reduce damage at the corner B of the chip.

Next, the operation obtained by the above structure will be described.

When the power module is operated, a large current flows through the power semiconductor element 5. Therefore, the power semiconductor element 5 emits a large amount of heat due to the power loss. This heat is radiated not only through the first insulating substrate 2 and the heat radiating substrate 1, but also through the second insulating substrate 9. Since the power semiconductor element 5 having the bevel structure is adopted, it is possible to radiate heat without causing a leak or a short circuit between the power semiconductor element 5 and the metal thin plate 10a.

As described above, according to the present embodiment, the heat generated in the power semiconductor element 5 can be efficiently radiated not only from the lower surface of the element 5 but also from the upper surface thereof without causing problems such as leakage and short circuit. Therefore, a power semiconductor module having an excellent cooling capacity can be provided.

Further, as described above, since the emitter electrode 7 and the emitter external electrode terminal (not shown) are connected by the metal plate, when a metal wire material such as an Al wire is used as a connecting material between them. The electric resistance and the inductance are reduced more than that. That is, the voltage drop, the spike voltage, and the induced noise that occur with the operation of the power semiconductor module such as the energization and switching of the power semiconductor element 5 are reduced. Further, when the current capacity is large, it is necessary to connect and form a plurality of metal wires such as Al wires in parallel when using a metal wire as a connecting material between the two. There is no need to reduce the on-voltage and improve the productivity.

In addition to the diode, the power semiconductor element 5 described in the above embodiment may be an element such as a power MOSFET, a power transistor, an IGBT (insulated gate type bipolar transistor), a SIT (static induction transistor), or a thyristor. Even if these are used alone,
Multiple types and multiple chips may be mixed and used. Therefore, the power semiconductor element 5 having the collector electrode 6 and the emitter electrode 7 as electrodes has been described as an example, but the present invention is not limited to this, and for example, a gate electrode, a base electrode, a sense electrode for protection, etc. Of course, it can be applied to a semiconductor device having

(Second Embodiment) FIG. 2 shows a modification of the conductive bonding material 11 of the power semiconductor module of FIG. That is, in this embodiment, the conductive bonding material 15 such as a solder bump or a metal ball bump is applied instead of the conductive bonding material 11 such as a solder paste or a conductive resin material. The other parts are the same as those in FIG. By using the solder bumps or the like in this manner, the conductive bonding material 15 can be provided on the emitter electrode 7 with good matching. That is, the emitter electrode 7 and the thin metal plate 1
Positioning with 0a becomes easy. For this bonding, a method of directly forming solder bumps on the emitter electrode 7 and bonding, or a method of reflowing the solder after the solder bumps are thermocompression-bonded and temporarily fixed to make a final connection can be adopted. . Since the solder bump has a self-alignment effect that intrinsically corrects the positional deviation due to the surface tension of the solder at the time of reflow of the solder, not only the productivity but also the reliability is high.

According to the present embodiment, in addition to the above, similarly to the first embodiment, it is possible to improve the heat radiation effect while preventing leaks and short circuits, and to reduce other voltage drops, spike voltages, induced voltages, etc. The effect of can be obtained.

(Third Embodiment) FIG. 3 shows a modification of the power semiconductor element 5 of the power semiconductor module shown in FIG. That is, in the present embodiment, the IGBT (power semiconductor element) 14 is used as the power semiconductor element.

The structure of this power semiconductor module will be briefly described. On the upper surface of the power semiconductor element 14, two electrodes, an emitter electrode 7 and a gate electrode 16, are provided. The lower surface of the second insulating substrate 9 has two thin metal plates 10a,
10b is attached. The metal thin film 10a corresponds to the emitter electrode 7, and the metal thin film 10b corresponds to the gate electrode 16. The metal thin plate 10a and the electrode 7 are bonded by the conductive bonding material 17, and the metal thin film 10b and the electrode 1 are bonded.
6 is joined with a conductive joining material 18. Examples of the conductive bonding materials 17 and 18 include solder paste. The other structure is similar to that of FIG.

As described above, even when the power semiconductor element 14 has the three electrodes 6, 7, and 16, the leakage
It is possible to improve the heat dissipation effect while preventing problems such as a short circuit, and it is possible to obtain other effects such as reduction of voltage drop, spike voltage, and induced voltage.

Here, an example of efficient manufacturing means of the power semiconductor module in FIG. 3 will be shown. This manufacturing means is not limited to this embodiment and can be used in other embodiments.

First, a conductive bonding material 8 such as a solder paste is attached to the thin metal plate 3b, and then the power semiconductor element 1 is formed.
Mount 4 in place. Next, conductive bonding materials 17, 18 such as solder paste and solder bumps are attached onto the emitter electrode 7 and the gate electrode 16. Next, the thin metal plate 1
The second insulating substrate 9 is placed on the power semiconductor element 14 so that 0a and 10b face the electrodes 7 and 16, respectively. After this,
The conductive bonding materials 8, 17, and 18 are heated and melted at the same time, and the upper surface and the lower surface of the power semiconductor element 14 are bonded together. This can improve productivity. In this manufacturing example, the power semiconductor element 14 is first formed on the metal thin plate 3b.
However, the order may be reversed, and the power semiconductor element 14 may be mounted on the metal thin plates 10a and 10b first.

(Fourth Embodiment) FIG. 4 is a modification of the power semiconductor module shown in FIG. 3, in which an electronic device including a control circuit and a protection circuit for the power semiconductor element 14 is provided on the second insulating substrate 9. The components (circuit members) 25a and 25b are mounted.

The structure of the power semiconductor module will be briefly described.

The metal thin plates 10a and 10b attached to the lower surface of the second insulating substrate 9 are the electrodes 7 of the power semiconductor element 14,
6 and electrically conductive bonding materials 17 and 18 respectively. On the other hand, thin metal plates 26a, 26b, 26c and 26d are formed on the upper surface of the second insulating substrate 9 in a predetermined wiring pattern. The thin metal plate 26d is electrically connected to the thin metal plate 10b through a hole provided in the second insulating substrate 9. The electronic component 25b is the thin metal plate 2
6c, 26d electrically connected to the electronic component 25
a is connected to the metal thin plates 26a and 26b. The electronic component 25b is, for example, a control circuit or a protection circuit for the semiconductor element 14, and is electrically connected to the gate electrode 16 via the metal thin plate 26d and the metal thin plate 10b. Electronic component 25a
Are electrically connected to other elements and electronic parts (not shown) through the metal thin plates 26a and 26b.

As the second insulating substrate 9, a resin circuit board used for a small signal circuit board or the like can be used in addition to an insulating board having excellent heat conductivity such as alumina or aluminum nitride. A heat dissipation board 27 is provided in a block shape between the metal thin plate 10 a and the heat dissipation board 1. Others are Figure 3
The description is omitted because it is similar to the above.

In this way, by mounting the electronic components 25a and 25b on the second insulating substrate 9, the semiconductor element 14 can be manufactured.
The control circuit and the protection circuit for controlling or protecting the same and the like can be efficiently housed in the same module. In addition, the semiconductor element 14 and the electronic components 25a and 25b
Since the wiring length of the wiring is shortened, the speed of control and protection can be increased. Further, by providing the heat dissipation board 27 between the second insulating board 9 and the heat dissipation board 1, the heat generated by the power semiconductor element 14 is transferred to the heat dissipation board 1 via the second insulation board 9 and the heat dissipation board 27. Since it is transmitted, heat is efficiently dissipated.
This heat dissipation is performed while preventing leaks and short circuits. In addition to this, according to the present embodiment, it is apparent from the above embodiments that the effects such as the voltage drop, the spike voltage, and the reduction of the induced voltage can be obtained.

(Fifth Embodiment) FIG. 5 is a modification of the power semiconductor module of FIG. That is, in this embodiment, the heat dissipation substrate 20 is provided above the second insulating substrate 9.

The structure of the power semiconductor module of FIG. 5 will be briefly described.

A metal thin plate 10 is provided on the upper surface of the second insulating substrate 9.
c is attached. A heat dissipation substrate 20 is provided on the thin metal plate 10c with a conductive bonding material 19 interposed therebetween. Enclosures 21b and 21a are provided between the heat dissipation board 20 and the heat dissipation board 1.
Are provided in blocks on the left and right. Others are the same as those in FIG. 3, and thus the description is omitted.

As a result, the heat generated in the power semiconductor element 5 is transferred to the heat dissipation substrates 1 and 20 via the insulating substrates 2 and 9, so that heat is more effectively dissipated without causing leaks or short circuits. It becomes possible. In addition to the above, it is apparent from the above-described embodiment that actions such as voltage drop, spike voltage, and reduction of induced voltage can be obtained.

(Sixth Embodiment) FIG. 6 shows a modification of the metal thin plates 3b, 10a, 10b of the power semiconductor module of FIG. That is, in this embodiment,
The thin metal plates 3b, 10a, 10b are integrally formed with the external electrode terminals.

The structure of the power semiconductor module shown in FIG. 6 will be briefly described.

The collector electrode 6 provided on the lower surface of the power semiconductor element 14 has the metal thin plate 3b via the conductive bonding material 8.
It is joined with. The thin metal plate 3b is configured to extend rightward in the drawing, and is taken out to the outside through the envelope 21a. The taken out portion functions as an external electrode terminal. That is, the thin metal plate 3b and the external electrode terminal are integrally formed. Thin metal plates 10a, 10
As can be seen from FIG. 6, b is also integrally formed with each external electrode terminal. Others are the same as those in FIG. 5, and thus description thereof will be omitted.

As a result, the wiring resistance and the connection resistance are further reduced, and the voltage drop is further reduced. Further, it is apparent from the above-described embodiment that the heat dissipation effect can be improved while preventing leaks and short circuits, and that effects such as reduction of spike voltage and induced voltage can be obtained.

(Seventh Embodiment) FIG. 7 shows a modification of the heat dissipation board 20 of the power semiconductor module of FIG. That is, in this embodiment, the heat dissipation board 22 is coupled to the heat dissipation board 1.

The structure of the power semiconductor module of FIG. 7 will be briefly described.

A conductive bonding material 19 is formed on the second insulating substrate 9.
The heat dissipation substrate 22 is provided via the. Heat dissipation board 22
Includes a heat dissipation board 22a and a heat dissipation board 22b, the heat dissipation board 22a is provided on the second insulating board 9, and the heat dissipation board 22b is provided in a block shape between the heat dissipation board 22a and the heat dissipation board 1. Has been. The heat dissipation board 22a and the heat dissipation board 22b may be made of separate members or may have an integral structure. An envelope 23 is provided on the heat dissipation board 1 so as to cover the elements on the heat dissipation board 1.

As a result, the heat generated by the power semiconductor element 14 is transferred from the heat dissipation board 22 to the heat dissipation board 1, so that it is possible to more effectively dissipate heat while preventing leaks and short circuits. Further, as the module form, since the envelope 23 can retain the form of the conventional module having a structure in which the upper surface and the side face of the module are covered, effective heat dissipation while maintaining the form of the conventional module can be performed. In addition, it is the same as the above-described embodiment that the effects such as the voltage drop, the spike voltage, and the reduction of the induced voltage can be obtained.

(Eighth Embodiment) FIG. 8 shows a power semiconductor module having a plurality of power semiconductor elements mounted thereon. FIG. 8B is an enlarged sectional view of the power module in plan view, and FIG. 8A is an enlarged sectional view taken along line CC of FIG. 8B. However, the heat dissipation board 1 in FIG.
20, the envelopes 21a, 21b, etc. are omitted in FIG. 8 (b). Further, in FIGS. 8A and 8B, for simplification, illustration of a conductive bonding material or the like used for bonding the elements is omitted.

The structure of the power module will be briefly described with reference to FIGS.

As can be seen particularly from FIG. 8B, the power module is composed of the upper arm UA and the lower arm LA of the inverter. The upper arm UA has two IGs
It is composed of a BT chip 14 and four anti-parallel FRD chips (diodes) 5, and the lower arm LA has two IGBs.
It is composed of a T chip 14 and four FRD chips 5.
The upper arm UA and the lower arm LA are connected in series through a relay-use thin metal plate 29 having a block shape.

As can be seen from FIG. 8A, the heat dissipation board 1
A first insulating substrate 2 having metal thin plates 3d and 3c on its upper surface is mounted on the top. IGB on the thin metal plate 3d
A T chip 14 (1) and an FRD chip 5 (1) are provided. A collector electrode (drain electrode) 6 is formed on the lower surface of the IGBT chip 14 (1), and a base electrode (gate electrode) 16 and an emitter electrode (source electrode) 7a are formed on the upper surface. A collector electrode (cathode) 6 is formed on the lower surface of the FRD chip 5 (1), and an emitter electrode (anode) 7b is formed on the upper surface thereof. On the other hand, the IGBT chip 14 (2) and the FRD chip 5 (2) are symmetrically provided on the metal thin plate 3c.

Metal thin plates 10g, 10f, 10e, and 10d are formed on the lower surfaces of the IGBT chip 14 and the FRD chip 5.
A second insulating substrate 9 marked with is provided. The thin metal plate 10g is the gate electrode 1 of the IGBT chip 14 (1).
6, the metal thin plate 10f is connected to the source electrode 7a of the IGBT chip 14 (1) and the FRD chip 5
It is joined to the anode 7b of (1). Similarly, the thin metal plate 10e serves as the anode 7b of the FRD chip 5 (2).
And the source electrode 7a of the IGBT chip 14 (2), and the thin metal plate 10d is joined to the gate electrode 16 of the IGBT chip 14 (2). And the thin metal plate 1
0e is joined by the metal thin plate 3d and the relay metal thin plate 29. This electrically connects the upper arm and the lower arm. Further, as can be seen from FIG. 8 (a),
A heat dissipation substrate 20 is provided on the second insulating substrate 9. Between the heat dissipation board 20 and the heat dissipation board 1, the heat dissipation board 1
Envelopes 21a and 21b are provided on the left and right in a block shape so as to surround the upper element. As can be seen from FIG. 8B, the thin metal plate 10d is the IGBT chip 14
It is electrically connected to one terminal of the electronic component 30 provided near (4), and the other terminal of the electronic component 30 is electrically connected to another metal thin plate 31. Also,
Metal thin plates are provided on the lower surface of the first insulating substrate 2 and the upper surface of the second insulating substrate 9, but illustration and description thereof are omitted.

In manufacturing this power module, it is efficient to use the manufacturing means as shown in the third embodiment. That is, for example, as can be seen from FIG. 8A, the plurality of power semiconductor elements 14 (1), 5
(1), 5 (2), and 14 (2) are replaced by thin metal plates 3d, 3c.
A conductive bonding material (not shown) such as a solder paste or a solder bump is attached to the top and then mounted at a predetermined position. Next, these elements 14 (1), 5 (1), 5 (2), 1
4 (2) electrodes 16, 7a, 7b, 7b, 7a, 16 are attached with a conductive bonding material (not shown) such as a solder paste or a solder bump, and the second insulating substrate 9 is placed thereon. . Then, by heating the entire module to melt these conductive bonding materials, the element 14 (1),
The upper and lower surfaces of 5 (1), 5 (2), and 14 (2) are collectively joined. This order may be reversed, and after mounting the elements 14 (1), 5 (1), 5 (2), 14 (2) on the second insulating substrate 9, the first insulating substrate 2 is mounted, After that, the entire module may be heated. Since the solder paste and solder bumps have a self-alignment effect that intrinsically corrects the positional deviation between the electrode of the semiconductor element and the thin metal plate due to the surface tension of the solder when reflowing the solder, the productivity is improved. Not only is it highly reliable.

Thus, the thin metal plates 3c, 3c, 10d are
By forming 10g in a predetermined pattern,
It can be efficiently modularized and the overall performance of the device can be improved. That is, it is possible to improve the heat radiation effect while preventing leaks and short-circuits, and to obtain other effects such as voltage drop, spike voltage, and induced voltage reduction, while having a simple structure.

[0068]

According to the present invention, in order to enhance the heat dissipation effect, both sides of the power semiconductor element have the heat dissipation effect.
Since the power semiconductor element has the bevel structure while adopting the configuration of sandwiching it by the second metal thin plate, it is possible to eliminate the potential increase on the upper surface side of the power semiconductor element.
It is possible to prevent leakage, short circuit, etc. between the power semiconductor element and the second thin metal plate. That is, it is possible to efficiently dissipate the heat generated in the power semiconductor element not only from the lower surface but also from the upper surface without newly causing a defect, and it is possible to provide a power semiconductor device having excellent cooling performance.

[Brief description of drawings]

FIG. 1 is a diagram showing a power semiconductor module according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a power semiconductor module according to a second embodiment of the present invention.

FIG. 3 is a diagram showing a power semiconductor module according to a third embodiment of the present invention.

FIG. 4 is a diagram showing a power semiconductor module according to a fourth embodiment of the present invention.

FIG. 5 is a diagram showing a power semiconductor module according to a fifth embodiment of the present invention.

FIG. 6 is a diagram showing a power semiconductor module according to a sixth embodiment of the present invention.

FIG. 7 is a diagram showing a power semiconductor module according to a seventh embodiment of the present invention.

FIG. 8 is a diagram showing a power semiconductor module according to an eighth embodiment of the present invention.

FIG. 9 is a diagram showing a conventional power semiconductor module.

[Explanation of symbols]

1, 20, 27 Heat dissipation substrate 2 First insulating substrate 3a-d, 10a-g, 26a-d Metal thin plate (metal plate) 4, 8, 11, 15, 17-19 Conductive bonding material 5, 14 Semiconductor element 6 collector electrode 7, 7a, 7b emitter electrode 9 second insulating substrate 12 bevel structure 13 square chip 16 base electrodes 21a, 21b, 23 envelopes 25a, 25b, 30 electronic component 29 relay metal thin plate 101 heat dissipation substrate 102, 105 Insulating substrates 103a, 103b, 106a, 106b Thin metal plates (metal plates) 104a, 104b, 111a, 111b, 111c
Conductive bonding material 107 Collector external electrode terminal 108 Collector electrode 109 Emitter electrode 110 Semiconductor element 112 Metal wire 113 Envelope 114 Mold material 115 Emitter external electrode terminal

Front page continuation (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 23/40 H01L 23/36 M 25/18

Claims (10)

[Claims] 1. A first insulating substrate having a first metal plate, and an angle formed by an end face and an upper face, which is mounted on the first metal plate of the first insulating substrate, is an acute angle on the upper face side. At least one having a bevel structure for suppressing an increase in potential
Individual semiconductor elements and the upper surface of the semiconductor element, and at the end of the semiconductor element, the upper surface of the semiconductor element is joined to the upper surface of the semiconductor element via an insulator. A second insulating substrate having a second metal plate, and a power semiconductor device. 2. The power semiconductor device according to claim 1, wherein a first heat dissipation substrate is further provided on an outer surface of the first insulating substrate. 3. At least one of the bonding between the semiconductor element and the first insulating substrate and the bonding between the semiconductor element and the second insulating substrate is made of a conductive bonding material. The power semiconductor device according to claim 1, wherein the power semiconductor device is a power semiconductor device. 4. The power semiconductor according to claim 1, wherein at least one of a solder paste, a solder bump, a metal ball bump, and a conductive resin is used as the conductive bonding material. apparatus. 5. A circuit member electrically connected to the semiconductor element is mounted on a surface of the second insulating substrate different from a surface on which the semiconductor element is joined. Item 5. The power semiconductor device according to items 1 to 4. 6. The power supply according to claim 1, wherein a heat dissipation substrate is further provided on a surface of the second insulating substrate different from a surface to which the semiconductor element is joined. Semiconductor device. 7. The power semiconductor device according to claim 6, wherein the first heat dissipation board and the second heat dissipation board are coupled to each other and are configured to be capable of transferring heat to each other. 8. The semiconductor element comprises a plurality of semiconductor elements, and the first metal plate and the second metal plate are configured as a circuit pattern for electrically connecting the plurality of semiconductor elements. The power semiconductor device according to claim 1, wherein the power semiconductor device is present. 9. The power semiconductor device according to claim 1, wherein the semiconductor element has a rectangular planar shape. 10. The apex of the upper surface portion of the semiconductor element is constituted by a curved line.
The power semiconductor device according to item 1.