CN204391106U - A kind of big current power semiconductor modular - Google Patents
A kind of big current power semiconductor modular Download PDFInfo
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- CN204391106U CN204391106U CN201520050996.7U CN201520050996U CN204391106U CN 204391106 U CN204391106 U CN 204391106U CN 201520050996 U CN201520050996 U CN 201520050996U CN 204391106 U CN204391106 U CN 204391106U
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Abstract
Name of the present utility model is called a kind of big current power semiconductor modular.Belong to power semiconductor device technology field.It mainly solves the inadequate problem of the power semiconductor modular on state current of existing installation profile.Its principal character is: comprise radiating bottom plate, shell, insulating heat-conductive sheet, first, second bending electrode, electrode, first, second semiconductor chip, plastic cement securing member, the Silica hydrogel of gate pole assembly and interior filling or silicon gel rubber layer; First, second semiconductor chip molybdenum sheet face is formal dress mode down; First bending electrode, the second bending electrode, electrode are laminated structure electrode, and itself and the first semiconductor chip, the second semiconductor chip cathode contacts part add raised land, and be one time punching molded electrode.The utility model has the advantages that to make power semiconductor modular through-current capability high, can to meet in the equipment such as AC/DC motor, rectifier power source, frequency converter, electric welding machine and demand that through-current capability high little to power semiconductor modular overall dimension.
Description
Technical field
The utility model belongs to power semiconductor device technology field.Be specifically related to a kind of at the big current power semiconductor modular produced and in manufacturing process, stuctures and properties significantly improves.
Background technology
At present, high-current module product structure is mostly by radiating bottom plate 11, two panels insulating heat-conductive sheet 3, plastic casing 12, second semiconductor chip 8, first semiconductor chip 4, two briquettings 13, two round electrodes 14, public extraction electrode 15, gate pole assembly 10, securing member, and the silicon of interior filling coagulates the compositions such as (rubber) glue-line, as shown in Figure 2, this structure chips assembling mode adopts the second semiconductor chip 8 formal dress (molybdenum sheet faces down) and the first semiconductor chip 4 instead fills (molybdenum sheet faces up), and the distance that the first semiconductor chip 4 is just installing to radiating bottom plate to the distance of radiating bottom plate than the second semiconductor chip 8 is far away, first semiconductor chip 4 will arrive radiating bottom plate 11 again through briquetting 13, therefore the first semiconductor chip 4 heat-sinking capability calibration cartridge chip 8 of anti-dress is weaker, thus cause the overall through-current capability of this infrastructure product to decline.In addition, this structure output terminal adopts circle electrode 14 structure, and it be circle with the contact-making surface of client's busbar, and contact-making surface is less, and contact impedance comparatively greatly, affects this infrastructure product through-current capability.Along with the develop rapidly in the fields such as AC/DC motor, rectifier power source, frequency converter, electric welding machine, the requirement of client to power semiconductor modular on state current is more and more higher.If the power semiconductor modular of customer demand high throughflow ability, then recommend it to select the module of high electric current gear, the chip of its assembling larger diameter, overall dimension is large, and cost is too high.If power semiconductor modular adopts bending electrode structure of the present utility model (as shown in electrode in Fig. 1 7), just can solve the problem well.
Summary of the invention
The purpose of this utility model is exactly the big current power semiconductor modular providing a kind of stuctures and properties to improve for above-mentioned weak point, can to meet in the equipment such as AC/DC motor, rectifier power source, frequency converter, electric welding machine and demand that through-current capability high little to power semiconductor modular overall dimension.
A kind of big current power semiconductor modular, comprise radiating bottom plate, shell lower cover, outer casing upper cover, insulating heat-conductive sheet, the first bending electrode, the second bending electrode, electrode, the first semiconductor chip, the second semiconductor chip, plastic cement securing member, the Silica hydrogel of gate pole assembly and interior filling or silicon gel rubber layer, it is characterized in that: the first described semiconductor chip and the second semiconductor chip molybdenum sheet face are all down, two semiconductor chips all adopt formal dress mode, the original construction module of chip cooling ability strengthens, and module product through-current capability strengthens; The first described bending electrode, the second bending electrode, electrode are laminated structure electrode, and greatly, module product contacts excellent through-current capability to be strengthened for itself and client's busbar contact-making surface; The first described bending electrode, the second bending electrode, electrode add raised land at itself and the first semiconductor chip, the second semiconductor chip cathode contacts part, substitute garden electrode and briquetting in grand master pattern blocks design, decrease the contact voltage drop between electrode and briquetting in grand master pattern blocks design, thus reduce the pressure drop of module; The first described bending electrode, the second bending electrode, electrode are one time punching molded electrode, adopt a punching press to exempt from folding technique, not only avoid the irregular problem of electrode surface that secondary bending causes, and decrease module product production efficiency.
Radiating bottom plate described in technical solution of the present utility model is the radiating bottom plate of T2 material, and surface smoothness is △ 8, employing abrasive polishing process is processed, surface roughness is little compared with the radiating bottom plate (being formed by equipment finish turning) in grand master pattern blocks design, radiating bottom plate and radiator Contact obtain tightr, and heat-sinking capability strengthens.
Shell described in technical solution of the present utility model is for be made up of shell lower cover 2, outer casing upper cover 16, for the shell of PBT or PPS material, be provided with plug-type enclosed construction between shell lower cover and outer casing upper cover, adopt the push-pull structure of this novelty, be easy to install and maintenance.
The first semiconductor chip described in technical solution of the present utility model, the second semiconductor chip are electric and electronic power device controllable silicon or the rectifier tube chip of diameter Ф 20-40mm, and its diameter is identical or larger with the chip diameter in circle electrode structure.
The first semiconductor chip described in technical solution of the present utility model, the second semiconductor chip are controlled silicon chip or the rectifier tube chip of two chip-in series.
The first semiconductor chip described in technical solution of the present utility model, the second semiconductor chip are a controlled silicon chip and a rectifier tube chip of series connection.
The first semiconductor chip described in technical solution of the present utility model, the second semiconductor chip are controlled silicon chip or the rectifier tube chip of two common anode poles connections.
The first semiconductor chip described in technical solution of the present utility model, the second semiconductor chip are a controlled silicon chip and a rectifier tube chip of the connection of common anode pole.
The first semiconductor chip described in technical solution of the present utility model, the second semiconductor chip are controlled silicon chip or the rectifier tube chip of two common cathodes connections.
The first semiconductor chip described in technical solution of the present utility model, the second semiconductor chip are a controlled silicon chip and a rectifier tube chip of common cathode connection.
The utility model is ensureing, under the prerequisite that former overall dimension is constant, chip all to be adopted the ventricumbent formal dress mode of molybdenum sheet, chip integral heat sink ability is strengthened; First bending electrode, the second bending electrode, electrode are laminated structure, and itself and client's busbar contact-making surface comparatively meta structure become large; First bending electrode, the second bending electrode, electrode 7 are adding raised land with chip cathode contacts part, substitute garden electrode and briquetting in grand master pattern blocks design, decrease the contact voltage drop between electrode and briquetting in grand master pattern blocks design; Radiating bottom plate T2 material manufactures, and adopt abrasive polishing process, surface roughness is little compared with the radiating bottom plate (being formed by equipment finish turning) in grand master pattern blocks design, and radiating bottom plate and radiator Contact obtain tightr, and heat-sinking capability strengthens; Electrode adopts a punching press to exempt from folding technique, not only avoid the irregular problem of electrode surface that secondary bending causes, and decrease module product production efficiency, thus improve the through-current capability of module product, and can manufacture and meet overall dimension little and the series connection that through-current capability is high, common anode pole or common cathode power semiconductor modular.The utility model has the advantages that to make power semiconductor modular through-current capability high, can to meet in the equipment such as AC/DC motor, rectifier power source, frequency converter, electric welding machine and demand that through-current capability high little to power semiconductor modular overall dimension.
Accompanying drawing explanation
Fig. 1 is the utility model modular structure schematic diagram.
Fig. 2 is grand master pattern block structure schematic diagram.
Fig. 3 is power output terminal and copper bar contact structures schematic diagram.
Fig. 4 is the utility model push-and-pull shell mechanism schematic diagram.
Fig. 5 is grand master pattern block base plate schematic diagram.
Fig. 6 is the utility model module base plate schematic diagram.
Fig. 7 is the utility model contact heat resistance schematic diagram.
Fig. 8 is grand master pattern block contact heat resistance schematic diagram.
Fig. 9 is temperature sampling point schematic diagram.
In figure: 1-radiating bottom plate, 2-shell lower cover, 3-insulating heat-conductive sheet, 4-first semiconductor chip, 5-first bending electrode, 6-second bending electrode, 7-electrode, 8-second semiconductor chip, 9-plastic cement securing member, 10-gate pole assembly, 11-radiating bottom plate, 12-plastic casing, 13-briquetting, 14-circle electrode, 15-electrode, 16-outer casing upper cover, 17-client's busbar.
Embodiment
The utility model structure and former project organization as shown in Figure 1, Figure 2, shown in Fig. 3, Fig. 4, Fig. 6.The utility model current power semiconductor module comprises radiating bottom plate 1, shell lower cover 2, outer casing upper cover 16, insulating heat-conductive sheet 3, first bending electrode 5, second bending electrode 6, electrode 7, first semiconductor chip 4, second semiconductor chip 8, plastic cement securing member 9, the Silica hydrogel of gate pole assembly 10 and interior filling or silicon gel rubber layer.First semiconductor chip 4 and the second semiconductor chip 8 molybdenum sheet face, all towards direction below, adopt formal dress mode, and the heat-sinking capability of the first semiconductor chip 4 strengthens, and module product through-current capability strengthens.First bending electrode 5, second bending electrode, electrode 7 is laminated structure electrode, a punching press is adopted to exempt from folding technique, not only avoid the irregular problem of electrode surface that secondary bending causes, and decrease module product production hour, and at itself and the first semiconductor chip 4, second semiconductor chip 8 cathode contacts part adds raised land, substitute circle electrode 14 in grand master pattern blocks design, electrode 15 and briquetting 13, itself and client's busbar 17 contact-making surface become large, module product through-current capability strengthens, decrease the contact voltage drop between electrode and briquetting in grand master pattern blocks design, thus reduce the pressure drop of module.Radiating bottom plate 1 T2 material manufactures, and adopt abrasive polishing process, surface smoothness is △ 8, and surface roughness is formed by equipment finish turning compared with the radiating bottom plate 11(in grand master pattern blocks design) little, radiating bottom plate 1 and radiator Contact obtain tightr, and heat-sinking capability strengthens.Shell is made up of shell lower cover 2, outer casing upper cover 16, is the shell of PBT or PPS material, is provided with plug-type enclosed construction between shell lower cover 2 and outer casing upper cover 16, adopt the push-pull structure of this novelty, is easy to install and maintenance.First semiconductor chip 4, second semiconductor chip 8 is electric and electronic power device controllable silicon or the rectifier tube chip of diameter Ф 20-40mm, and its diameter is identical or larger with the chip diameter in circle electrode structure.Insulating heat-conductive sheet 3 is placed on radiating bottom plate 1, then be the first bending electrode 5, electrode 7, first semiconductor chip 4, second semiconductor chip 8, second bending electrode 6, gate pole assembly 10 successively, compress with trip bolt, push to shell lower cover 2 plastic cement securing member 9 and complete encapsulation.First semiconductor chip 4 if rectifying tube, then corresponding cancellation part gate pole assembly 10; If the first semiconductor chip 4, second semiconductor chip 8 is all rectifying tube, then need directly to cancel gate pole assembly 10.
The first bending electrode 5, second bending electrode 6, electrode 7 and the first semiconductor chip 4, second semiconductor chip 8 is adopted to be two controlled silicon chips or rectifier tube chip of connecting in shell.
Can also adopt the first bending electrode 5, second bending electrode 6, electrode 7 and the first semiconductor chip, the second semiconductor chip in shell, the first semiconductor chip, the second semiconductor chip are controlled silicon chip and the rectifier tube chip of series connection.
Can also adopt the first bending electrode 5, second bending electrode 6, electrode 7 and the first semiconductor chip, the second semiconductor chip in shell, the first semiconductor chip, the second semiconductor chip are controlled silicon chip or the rectifier tube chip of two common anode poles connections.
Can also adopt the first bending electrode 5, second bending electrode 6, electrode 7 and the first semiconductor chip, the second semiconductor chip in shell, the first semiconductor chip, the second semiconductor chip are a controlled silicon chip and a rectifier tube chip of the connection of common anode pole.
Can also adopt the first bending electrode 5, second bending electrode 6, electrode 7 and the first semiconductor chip, the second semiconductor chip in shell, the first semiconductor chip, the second semiconductor chip are controlled silicon chip or the rectifier tube chip of two common cathodes connections.
Can also adopt the first bending electrode 5, second bending electrode 6, electrode 7 and the first semiconductor chip, the second semiconductor chip in shell, the first semiconductor chip, the second semiconductor chip are a controlled silicon chip and a rectifier tube chip of common cathode connection.
Manufacturing process:
1, chip: select common controllable silicon or rectifier tube chip;
2, module assembled: radiating bottom plate 1, insulating heat-conductive sheet 3, first bending electrode 5, second bending electrode 6, electrode 7, first semiconductor chip 4, second semiconductor chip 8 etc. are fitted together successively, compresses with plastic cement securing member 9 and trip bolt;
3, fastening: with forcing press pressurization, by various compressing parts;
4, encapsulate: with fluid sealant between shell and radiating bottom plate 1, gate pole sheet and shell are installed, welding gate pole sheet, room temperature or 50 ~ 80 DEG C of solidifications of heating, 4 ~ 10 hours curing times; Solidifying (rubber) glue of silicon is poured into, the process of vacuum row bubble, 50 ~ 80 DEG C of solidifications of heating, 4 ~ 10 hours curing times in module;
5, high temperature storage: store more than 72 hours in 70 ~ 100 DEG C of baking ovens;
6, test: by the parameter such as repetitive peak voltage, gate pole, pressure drop, insulation voltage of various testing of equipment product.
Table 1 is the actual test data contrast table of the utility model example.Example 413FD module is only the one in numerous model, and other model structure is similar with it.As shown in Figure 7, as shown in Figure 8, temperature sampling point schematic diagram as shown in Figure 9 for the contact heat resistance schematic diagram of 413F3 module grand master pattern block for the contact heat resistance schematic diagram of the utility model 413FD module.413F3D module, 413F3 modular environment temperature comparisons through-flow test (environmental temperature experiment operational module is all counter group of module).
Claims (10)
1. a big current power semiconductor modular, comprise radiating bottom plate (1), shell lower cover (2), outer casing upper cover (16), insulating heat-conductive sheet (3), first bending electrode (5), second bending electrode (6), electrode (7), first semiconductor chip (4), second semiconductor chip (8), molybdenum sheet, plastic cement securing member (9), the Silica hydrogel of gate pole assembly (10) and interior filling or silicon gel rubber layer, it is characterized in that: described the first semiconductor chip (4), second semiconductor chip (8) molybdenum sheet face is all towards direction below, that is: formal dress mode is adopted, the first described bending electrode (5), the second bending electrode, electrode 7 are laminated structure electrode, the first described bending electrode (5), the second bending electrode, electrode 7 add raised land at itself and the first semiconductor chip (4), the second semiconductor chip (8) cathode contacts part, the first described bending electrode (5), the second bending electrode (6), electrode (7) are one time punching molded electrode.
2. a kind of big current power semiconductor modular according to claim 1, is characterized in that: the radiating bottom plate that described radiating bottom plate (1) is T2 material, and surface smoothness is △ 8.
3. a kind of big current power semiconductor modular according to claim 1 or 2, it is characterized in that: described shell is for be made up of shell lower cover (2), outer casing upper cover (16), for the shell of PBT or PPS material, between shell lower cover (2) and outer casing upper cover (16), be provided with plug-type enclosed construction.
4. a kind of big current power semiconductor modular according to claim 1 and 2, is characterized in that: the electric and electronic power device controllable silicon that described the first semiconductor chip (4), the second semiconductor chip (8) are diameter Ф 20-40mm or rectifier tube chip.
5. a kind of big current power semiconductor modular according to claim 1 and 2, is characterized in that: the first described semiconductor chip, the second semiconductor chip are controlled silicon chip or the rectifier tube chip of two chip-in series.
6. a kind of big current power semiconductor modular according to claim 1 and 2, is characterized in that: the first described semiconductor chip, the second semiconductor chip are a controlled silicon chip and a rectifier tube chip of series connection.
7. a kind of big current power semiconductor modular according to claim 1 and 2, is characterized in that: the first described semiconductor chip, the second semiconductor chip are controlled silicon chip or the rectifier tube chip of two common anode poles connections.
8. a kind of big current power semiconductor modular according to claim 1 and 2, is characterized in that: the first described semiconductor chip, the second semiconductor chip are a controlled silicon chip and a rectifier tube chip of the connection of common anode pole.
9. a kind of big current power semiconductor modular according to claim 1 and 2, is characterized in that: the first described semiconductor chip, the second semiconductor chip are controlled silicon chip or the rectifier tube chip of two common cathodes connections.
10. a kind of big current power semiconductor modular according to claim 1 and 2, is characterized in that: the first described semiconductor chip, the second semiconductor chip are a controlled silicon chip and a rectifier tube chip of common cathode connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520050996.7U CN204391106U (en) | 2015-01-26 | 2015-01-26 | A kind of big current power semiconductor modular |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520050996.7U CN204391106U (en) | 2015-01-26 | 2015-01-26 | A kind of big current power semiconductor modular |
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| Publication Number | Publication Date |
|---|---|
| CN204391106U true CN204391106U (en) | 2015-06-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520050996.7U Expired - Fee Related CN204391106U (en) | 2015-01-26 | 2015-01-26 | A kind of big current power semiconductor modular |
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| Country | Link |
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| CN (1) | CN204391106U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428342A (en) * | 2015-01-26 | 2016-03-23 | 湖北台基半导体股份有限公司 | High-current power semiconductor module |
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2015
- 2015-01-26 CN CN201520050996.7U patent/CN204391106U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428342A (en) * | 2015-01-26 | 2016-03-23 | 湖北台基半导体股份有限公司 | High-current power semiconductor module |
| CN105428342B (en) * | 2015-01-26 | 2019-02-12 | 湖北台基半导体股份有限公司 | A kind of high current power semiconductor modular |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150610 Termination date: 20190126 |