CN201514939U - 3600V high-voltage power semiconductor module - Google Patents
3600V high-voltage power semiconductor module Download PDFInfo
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- CN201514939U CN201514939U CN2009200868451U CN200920086845U CN201514939U CN 201514939 U CN201514939 U CN 201514939U CN 2009200868451 U CN2009200868451 U CN 2009200868451U CN 200920086845 U CN200920086845 U CN 200920086845U CN 201514939 U CN201514939 U CN 201514939U
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- semiconductor module
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Abstract
The utility model is named as a 3600V high-voltage power semiconductor module, belonging to the technical field of manufacture of the power semiconductor module and mainly providing a high-voltage power semiconductor module with the repeated peak voltage being up to 3600V. The 3600V high-voltage power semiconductor module is mainly characterized by comprising a lining, a shell, a radiating bottom plate, a common electrode, a chip, a pressing block, a round electrode, an insulating sleeve ring, a flat washer, a butterfly-shaped washer, a pressing plate, screws, a door pole piece and a silica gel layer, wherein the chip is a silicon controlled rectifier or rectifying tube with the repeated peak voltage being more than or equal to 3600V, and the table surface of the chip adopts a polyester inferior amine and silicon rubber double-layer protecting layer; a Be2O3 isolating layer is adopted between the chip and the radiating bottom plate; and the chip, the Be2O3 isolating layer and the pressing block part are coated with silicon rubber layers. The 3600V high-voltage power semiconductor module is characterized by repeated peak voltage being up to 3600V and convenient installation and use, and is mainly used for the high-voltage power semiconductor modules with the repeated peak voltage being up to 3600V in equipment with high-voltage soft start, high-voltage variable-frequency and high-voltage reactive compensation and the like.
Description
Technical field
The utility model belongs to power semiconductor modular manufacturing technology field.Particularly relate to a kind of power electronic device that is applied to, its repetitive peak voltage can reach the high-voltage power semiconductor module of 3600V.
Background technology
At present, power semiconductor modular mostly is made of the silicon gel layer of filling in the separator between liner, shell, radiating bottom plate, common electrode, chip, chip and the radiating bottom plate, briquetting, circle electrode, insulating ferrule, plain washer, butterfly gasket, pressing plate, screw, gate pole sheet and the shell, the highest repetitive peak voltage is domestic to be 2000V, abroad is 2200V.Extensive application along with environment protection energy-saving equipment; at soft starter for motor; frequency conversion; it is more and more higher to the requirement of withstand voltage of semiconductor device that reactive-load compensation equipment is made the field; power semiconductor modular is as the critical component in the equipment; 2200V repetitive peak voltage can not satisfy the demands; if adopt the module serial connection technology; need to consider all problems such as pressure; cost increases; equipment volume increases; though adopt repetitive peak voltage 3600V high-pressure modular just can address the above problem well; also there be at present controllable silicon or the rectifier tube chip of repetitive peak voltage more than or equal to 3600V; but because chip table adopts the single ply protective layer; separator dielectric strength between chip and the radiating bottom plate is not enough; chip; separator; the dielectric strength at briquetting position is also not enough, thereby up to the present also fails to produce the high-voltage power semiconductor module of 3600V.
Summary of the invention
The purpose of this utility model provides a kind of power semiconductor modular repetitive peak voltage that makes to reach 3600V at above-mentioned weak point exactly, can satisfy in the equipment such as high pressure soft starting, high-pressure frequency-conversion and high-pressure reactive compensation the high-voltage power semiconductor module to the high withstand voltage demand of power semiconductor modular.
Technical solution of the present utility model is: a kind of 3600V high-voltage power semiconductor module, comprise the silicon gel layer of filling in separator, briquetting, circle electrode, insulating ferrule, plain washer, butterfly gasket, pressing plate, screw, gate pole sheet and the shell between liner, shell, radiating bottom plate, common electrode, chip, chip and the radiating bottom plate, it is characterized in that: described chip is for repeating controllable silicon or the rectifier tube chip of crest voltage more than or equal to 3600V, and chip table adopts polyester imines, silicon rubber bilayer protective layer; Separator between chip and the radiating bottom plate is Be
2O
3Separator; At chip, Be
2O
3Separator, briquetting position coating silicon rubber layer.
Adopt single cover briquetting, circle electrode, insulating ferrule, plain washer, butterfly gasket, pressing plate, screw and monolithic controllable silicon or rectifier tube chip in the shell described in the utility model technical solution.
Adopt two cover briquettings, circle electrode, insulating ferrule, plain washer, butterfly gasket, pressing plate, screw and biplate controllable silicon or rectifier tube chip in the shell described in the utility model technical solution, wherein, briquetting in two covers and chip are that same order is arranged.
Adopt two cover briquettings, circle electrode, insulating ferrule, plain washer, butterfly gasket, pressing plate, screw and biplate controllable silicon or rectifier tube chip in the shell described in the utility model technical solution, wherein, briquetting in two covers and chip are that reversed sequence is arranged.
The utility model adopts Be owing to adopt repetitive peak voltage to adopt polyester imines, silicon rubber bilayer protective layer more than or equal to controllable silicon or the rectifier tube chip of 3600V at chip table between chip and radiating bottom plate
2O
3Separator is at chip, Be
2O
3Separator, briquetting position coating silicon rubber layer, thereby can make chip, Be
2O
3Separator has high insulation resistance, Be
2O
3Separator also has high thermal conductivity, makes the utility model repetitive peak voltage can reach 3600V, insulate between radiating bottom plate and the electrode, and the insulation voltage effective value is not less than 3600V.The utlity model has repetitive peak voltage and reach 3600V, characteristics easy to install.The utility model is mainly used in the high-voltage power semiconductor module that repetitive peak voltage in the equipment such as high pressure soft starting, high-pressure frequency-conversion and high-pressure reactive compensation can reach 3600V.
Description of drawings
Fig. 1 is the vertical section structural map of the utility model single chip architecture;
Fig. 2 is the vertical section structural map of the utility model twin-core sheet cascaded structure;
Fig. 3 is the internal electrical connection layout of the utility model twin-core sheet cascaded structure;
Fig. 4 is the vertical section structural map of the utility model twin-core sheet parallel-connection structure.
Embodiment
The utility model single chip architecture as shown in Figure 1.Corresponding identical in the silicon gel layers 16 of filling in liner 1, shell 2, radiating bottom plate 3, common electrode 5, chip 6, briquetting 7, circle electrode 8, insulating ferrule 9, plain washer 10, butterfly gasket 11, pressing plate 12, screw 13, gate pole sheet 14 and the shell 2 and the existing power semiconductor modular.Different is that chip 6 is controllable silicon or the rectifier tube chip of repetition crest voltage more than or equal to 3600V, and chip table adopts polyester imines, silicon rubber bilayer protective layer, has high withstand voltage properties; Separator 4 between chip 6 and the radiating bottom plate 3 is Be
2O
3Separator 4 has high thermal conductivity and high insulation resistance; At chip 6, Be
2O
3Separator 4, briquetting 7 position coating silicon rubber layers 15 have high insulation resistance.
Manufacturing process:
1, chip manufacturing: controlled silicon chip: adopt the n type single crystal silicon of 700～900 μ m, resistivity 150～300 Ω .cm, once Al.Ga impurity source, junction depth 90～130 μ m, surface concentration 2～8 * 10 are adopted in diffusion
17/ cm
3, POCl is adopted in the secondary diffusion
3Impurity source, junction depth 15～20 μ m, surface concentration 1～9 * 10
18/ cm
3, be coated with the source diffusion and adopt B
2O
3Impurity source, junction depth 22～28 μ m, surface concentration 1～9 * 10
18/ cm
3, the table top moulding is adopted just negative angle shaped, and one jiao 30～42 °, two jiaos 1～3 °, the table top protective material uses polyester imines+silicon rubber bilayer protection;
2, module assembling: with radiating bottom plate 3, Be
2O
3Separator 4, common electrode 5, chip 6, briquetting 7, circle electrode 8, auxiliary cathode, gate pole sheet 14, plastic casing 2 etc. fit together successively, compress with spring bearer plate 12 and screw 13.Wherein radiating bottom plate 3, common electrode 5, briquetting 7, circle electrode 8 are copper materials, and plastic casing 2 is PBT plastics;
3, fastening: as, various parts to be compressed with the forcing press pressurization;
4, encapsulation: between shell 2 and radiating bottom plate 3, seal welding gate pole sheet 14, the room temperature or 50～80 ℃ of curing of heating, 4～10 hours curing times with fluid sealant; At chip 6, Be
2O
3Separator 4
3, briquetting 7 positions apply the silicon rubber of high insulation resistance, the room temperature or 50～80 ℃ of curing of heating, 4～10 hours curing times; Perfusion silicon gel in shell 2,50～80 ℃ of curing of heating, 4～10 hours curing times;
5, high temperature storage: storage is more than 72 hours in 70～100 ℃ of baking ovens;
6, test: parameters such as the repetitive peak voltage of usefulness various device test products, gate pole, pressure drop, insulation voltage, on state current.
The test result of example:
Forward mean current rating I
T (AV): 200A
Repetitive peak reverse voltage V
RRM: 3600V
Non-repetitive peak reverse voltage V
RSM: 3800V
Forward repetitive peak voltage V
DRM: 3600V
Forward is repetitive peak voltage V not
DSM: 3800V
Peak Repetitive Reverse Current I
RRM:＜40mA
Repetitive Peak Forward Current I
DRM:＜40mA
Peak on state voltage V
TM:＜3.0V
Gate current I
GT: 30～200mA
Gate voltage V
GT: 1.0～2.5V
Keep electric current I
H:＜100mA
Insulation voltage Viso:3600V
The utility model twin-core sheet cascaded structure is shown in Fig. 2,3.Different with structure among Fig. 1 is to comprise two cover briquettings 7, circle electrode 8, insulating ferrule 9, plain washer 10, butterfly gasket 11, pressing plate 12, screw 13 and biplate controllable silicon or rectifier tube chip 6 in the shell 2, wherein, briquetting 7 in two covers is that reversed sequence is arranged with chip 6, and two chips 6 are that series system connects.
The utility model twin-core sheet parallel-connection structure as shown in Figure 4.Different with structure among Fig. 2 is that two briquettings 7 are that same order is arranged with chip 6, and two chips 6 are that parallel way connects.
Claims (4)
1. 3600V high-voltage power semiconductor module, comprise liner (1), shell (2), radiating bottom plate (3), common electrode (5), chip (6), separator (4) between chip (6) and the radiating bottom plate (3), briquetting (7), circle electrode (8), insulating ferrule (9), plain washer (10), butterfly gasket (11), pressing plate (12), screw (13), the silicon gel layer (16) of filling in gate pole sheet (14) and the shell (2), it is characterized in that: described chip (6) is for repeating controllable silicon or the rectifier tube chip of crest voltage more than or equal to 3600V, and chip table adopts polyester imines, the silicon rubber bilayer protective layer; Separator (4) between chip (6) and the radiating bottom plate (3) is Be
2O
3Separator (4); At chip (6), Be
2O
3Separator (4), briquetting (7) position coating silicon rubber layer (15).
2. a kind of 3600V high-voltage power semiconductor module according to claim 1 is characterized in that: adopt single cover briquetting (7), circle electrode (8), insulating ferrule (9), plain washer (10), butterfly gasket (11), pressing plate (12), screw (13) and monolithic controllable silicon or rectifier tube chip (6) in the described shell (2).
3. a kind of 3600V high-voltage power semiconductor module according to claim 1, it is characterized in that: adopt two cover briquettings (7), circle electrode (8), insulating ferrule (9), plain washer (10), butterfly gasket (11), pressing plate (12), screw (13) and biplate controllable silicon or rectifier tube chip (6) in the described shell (2), wherein, the briquetting (7) in two covers is that same order is arranged with chip (6).
4. a kind of 3600V high-voltage power semiconductor module according to claim 1, it is characterized in that: adopt two cover briquettings (7), circle electrode (8), insulating ferrule (9), plain washer (10), butterfly gasket (11), pressing plate (12), screw (13) and biplate controllable silicon or rectifier tube chip (6) in the described shell (2), wherein, the briquetting (7) in two covers is that reversed sequence is arranged with chip (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200868451U CN201514939U (en) | 2009-06-24 | 2009-06-24 | 3600V high-voltage power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200868451U CN201514939U (en) | 2009-06-24 | 2009-06-24 | 3600V high-voltage power semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201514939U true CN201514939U (en) | 2010-06-23 |
Family
ID=42486350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009200868451U Expired - Lifetime CN201514939U (en) | 2009-06-24 | 2009-06-24 | 3600V high-voltage power semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201514939U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157469A (en) * | 2011-03-15 | 2011-08-17 | 上海宏力半导体制造有限公司 | Cooling system of silicon controlled rectifier |
| CN102856314A (en) * | 2012-08-29 | 2013-01-02 | 永济新时速电机电器有限责任公司 | 6500V high-voltage diode module |
| CN105428342A (en) * | 2015-01-26 | 2016-03-23 | 湖北台基半导体股份有限公司 | High-current power semiconductor module |
| CN105448900A (en) * | 2015-01-26 | 2016-03-30 | 湖北台基半导体股份有限公司 | High-frequency low-pressure-drop power semiconductor module |
| CN112311251A (en) * | 2020-09-18 | 2021-02-02 | 威海新佳电子有限公司 | Rectifier module |
| CN112563210A (en) * | 2020-12-11 | 2021-03-26 | 浙江华晶整流器有限公司 | Reverse conducting module |
-
2009
- 2009-06-24 CN CN2009200868451U patent/CN201514939U/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157469A (en) * | 2011-03-15 | 2011-08-17 | 上海宏力半导体制造有限公司 | Cooling system of silicon controlled rectifier |
| CN102157469B (en) * | 2011-03-15 | 2015-10-28 | 上海华虹宏力半导体制造有限公司 | The cooling system of thyristor |
| CN102856314A (en) * | 2012-08-29 | 2013-01-02 | 永济新时速电机电器有限责任公司 | 6500V high-voltage diode module |
| CN102856314B (en) * | 2012-08-29 | 2015-02-11 | 永济新时速电机电器有限责任公司 | 6500V high-voltage diode module |
| CN105428342A (en) * | 2015-01-26 | 2016-03-23 | 湖北台基半导体股份有限公司 | High-current power semiconductor module |
| CN105448900A (en) * | 2015-01-26 | 2016-03-30 | 湖北台基半导体股份有限公司 | High-frequency low-pressure-drop power semiconductor module |
| CN105428342B (en) * | 2015-01-26 | 2019-02-12 | 湖北台基半导体股份有限公司 | A kind of high current power semiconductor modular |
| CN112311251A (en) * | 2020-09-18 | 2021-02-02 | 威海新佳电子有限公司 | Rectifier module |
| CN112563210A (en) * | 2020-12-11 | 2021-03-26 | 浙江华晶整流器有限公司 | Reverse conducting module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100623 |
|
| CX01 | Expiry of patent term |