CN105428342B - A kind of high current power semiconductor modular - Google Patents
A kind of high current power semiconductor modular Download PDFInfo
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- CN105428342B CN105428342B CN201510036757.0A CN201510036757A CN105428342B CN 105428342 B CN105428342 B CN 105428342B CN 201510036757 A CN201510036757 A CN 201510036757A CN 105428342 B CN105428342 B CN 105428342B
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Abstract
Entitled a kind of high current power semiconductor modular of the invention.Belong to power semiconductor device technology field.It mainly solves the problems, such as that the power semiconductor modular on state current of existing installation shape is inadequate.Being mainly characterized by comprising: for it includes radiating bottom plate, shell, insulating heat-conductive piece, the first, second bending electrode, electrode, the first, second semiconductor chip, plastic cement fastener, gate pole component and the Silica hydrogel of interior filling or silicon gel rubber layer；First, second semiconductor chip molybdenum sheet face is formal dress mode directed downwardly；First bending electrode, the second bending electrode, electrode are laminated structure electrode, increase raised land with the first semiconductor chip, the second semiconductor chip cathode contacts part, and be one time punching molded electrode.The present invention has the characteristics that keep power semiconductor modular through-current capability high, can satisfy demand small to power semiconductor modular outer dimension in the equipment such as AC/DC motor, rectifier power source, frequency converter, electric welding machine and that through-current capability is high.
Description
Technical field
The invention belongs to power semiconductor device technology fields.More particularly to one kind production and manufacturing process in structure and
The high current power semiconductor modular that performance significantly improves.
Background technique
Currently, high-current module product structure is mostly by radiating bottom plate 11, two panels insulating heat-conductive piece 3, plastic shell 12,
Two semiconductor chips 8, the briquetting 13, two of the first semiconductor chip 4, two round electrode 14, public extraction electrode 15, gate pole component
10, fastener and the silicon of interior filling coagulate the composition such as (rubber) glue-line, as shown in Fig. 2, this structure core piece assembly method uses
The anti-dress (molybdenum sheet is face-up) of second semiconductor chip, 8 formal dress (molybdenum sheet is face-down) and the first semiconductor chip 4, and the first semiconductor
The distance of chip 4 to radiating bottom plate is remoter than the distance that the second semiconductor chip 8 is just being attached to radiating bottom plate, the first semiconductor chip
4 will arrive again radiating bottom plate 11 by briquetting 13, therefore the counter 4 heat-sinking capability calibration cartridge chip 8 poor one of the first semiconductor chip filled
A bit, so as to cause the decline of this infrastructure product entirety through-current capability.In addition, this structure output terminal uses circle 14 structure of electrode,
Contact surface with client's busbar is circle, and contact surface is smaller, and contact impedance is larger, influences this infrastructure product through-current capability.With
The rapid development in the fields such as AC/DC motor, rectifier power source, frequency converter, electric welding machine, client is to power semiconductor modular on-state
The requirement of electric current is higher and higher.If the power semiconductor modular of customer demand high throughflow ability, it is recommended to select high current shelves
The module of position assembles the chip of larger diameter, and outer dimension is big, and cost is too high.If power semiconductor modular is using the present invention
Bending electrode structure (as shown in figure 1 shown in electrode 7), just can be well solved the above problem.
Summary of the invention
The high current power of a kind of structure and performance improvement is provided the purpose of the present invention is to above-mentioned shortcoming
Semiconductor module can satisfy in the equipment such as AC/DC motor, rectifier power source, frequency converter, electric welding machine to power semiconductor modular
The demand that outer dimension is small and through-current capability is high.
A kind of high current power semiconductor modular, including radiating bottom plate, shell lower cover, outer casing upper cover, insulating heat-conductive piece,
One bending electrode, the second bending electrode, electrode, the first semiconductor chip, the second semiconductor chip, plastic cement fastener, gate pole group
Part and the Silica hydrogel or silicon gel rubber layer of interior filling, it is characterized in that: first semiconductor chip and the second semiconductor core
Downward, two semiconductor chips are all made of formal dress mode, the original construction module enhancing of chip cooling ability, module in piece molybdenum sheet face
The enhancing of product through-current capability；The first bending electrode, the second bending electrode, electrode are laminated structure electrode, with visitor
Family busbar contact surface is big, and module product contacts excellent through-current capability enhancing；The first bending electrode, the second bending electricity
Pole, electrode increase raised land with the first semiconductor chip, the second semiconductor chip cathode contacts part at it, substitute former mould
Garden electrode and briquetting in block design, reduce the contact drop in former module design between electrode and briquetting, to reduce module
Pressure drop；The first bending electrode, the second bending electrode, electrode are one time punching molded electrode, using a punching press
The problem of exempting from folding technique, not only avoiding electrode surface out-of-flatness caused by secondary bending, and reduce module product production effect
Rate.
Radiating bottom plate described in technical solution of the invention is the radiating bottom plate of T2 material, and surface smoothness is
△ 8, is processed using abrasive polishing process, the radiating bottom plate (being formed by equipment smart car) in the more former module design of surface roughness
It is small, contact closer between radiating bottom plate and radiator, heat-sinking capability enhancing.
Shell described in technical solution of the invention be made of shell lower cover 2, outer casing upper cover 16, be PBT or
The shell of person's PPS material is equipped with plug-type enclosed construction, using this novel plug-type knot between shell lower cover and outer casing upper cover
Structure is easily installed and repairs.
First semiconductor chip described in technical solution of the invention, the second semiconductor chip are diameter Ф 20-
The silicon-controlled or rectifier tube chip of the electric and electronic power device of 40mm, diameter are identical as the chip diameter in circle electrode structure
Or it is bigger.
First semiconductor chip described in technical solution of the invention, the second semiconductor chip are two chip strings
The controlled silicon chip or rectifier tube chip of connection.
First semiconductor chip described in technical solution of the invention, the second semiconductor chip are concatenated one
Controlled silicon chip and a rectifier tube chip.
First semiconductor chip described in technical solution of the invention, the second semiconductor chip are two common-anodes
The controlled silicon chip or rectifier tube chip of connection.
First semiconductor chip described in technical solution of the invention, the second semiconductor chip are common-anode connection
A controlled silicon chip and a rectifier tube chip.
First semiconductor chip described in technical solution of the invention, the second semiconductor chip are two common cathodes
The controlled silicon chip or rectifier tube chip of connection.
First semiconductor chip described in technical solution of the invention, the second semiconductor chip are common cathode connection
A controlled silicon chip and a rectifier tube chip.
Chip is all made of the face-down formal dress mode of molybdenum sheet under the premise of guaranteeing that former outer dimension is constant by the present invention,
Enhance chip integral heat sink ability；First bending electrode, the second bending electrode, electrode are laminated structure, are led with client
Electricity row's contact surface becomes larger compared with meta structure；First bending electrode, the second bending electrode, electrode 7 increase with chip cathode contacts part
Raised land is added, has substituted garden electrode and briquetting in former module design, reduce in former module design between electrode and briquetting
Contact drop；Radiating bottom plate is manufactured with T2 material, the heat dissipation using abrasive polishing process, in the more former module design of surface roughness
Bottom plate (being formed by equipment smart car) is small, contacts closer between radiating bottom plate and radiator, heat-sinking capability enhancing；Electrode uses one
The problem of folding technique is exempted from secondary punching press, not only avoids electrode surface out-of-flatness caused by secondary bending, and reduce module product
Production efficiency, thus improve the through-current capability of module product, and may be produced that and meet that outer dimension is small and through-current capability is high
Series connection, common-anode or common cathode power semiconductor modular.The present invention has the characteristics that keep power semiconductor modular through-current capability high,
Can satisfy it is small to power semiconductor modular outer dimension in the equipment such as AC/DC motor, rectifier power source, frequency converter, electric welding machine and
The high demand of through-current capability.
Detailed description of the invention
Fig. 1 is modular structure schematic diagram of the present invention.
Fig. 2 is former modular structure schematic diagram.
Fig. 3 is power output terminal and copper bar contact structures schematic diagram.
Fig. 4 is present invention push-and-pull shell mechanism schematic diagram.
Fig. 5 is former module floor diagram.
Fig. 6 is module floor diagram of the present invention.
Fig. 7 is thermal contact resistance schematic diagram of the present invention.
Fig. 8 is former module contact thermal resistance schematic diagram.
Fig. 9 is temperature sampling point schematic diagram.
In figure: 1- radiating bottom plate, 2- shell lower cover, 3- insulating heat-conductive piece, the first semiconductor chip of 4-, 5- the first bending electricity
Pole, 6- the second bending electrode, 7- electrode, the second semiconductor chip of 8-, 9- plastic cement fastener, 10- gate pole component, 11- heat dissipation bottom
Plate, 12- plastic shell, 13- briquetting, 14- circle electrode, 15- electrode, 16- outer casing upper cover, 17- client's busbar.
Specific embodiment
Structure of the invention and former design structure as shown in Figure 1, Figure 2, shown in Fig. 3, Fig. 4, Fig. 6.Current power semiconductor of the present invention
Module includes radiating bottom plate 1, shell lower cover 2, outer casing upper cover 16, insulating heat-conductive piece 3, the first bending electrode 5, the second bending electricity
Pole 6, electrode 7, the first semiconductor chip 4, the second semiconductor chip 8, plastic cement fastener 9, gate pole component 10 and interior filling
Silica hydrogel or silicon gel rubber layer.First semiconductor chip 4 and 8 molybdenum sheet face of the second semiconductor chip use towards following direction
Formal dress mode, the heat-sinking capability enhancing of the first semiconductor chip 4, the enhancing of module product through-current capability.First bending electrode 5,
Eighty percent discount cranked electrode, electrode 7 are laminated structure electrode, exempt from folding technique using a punching press, not only avoid secondary bending and cause
Electrode surface out-of-flatness the problem of, and reduce module product production hour, and in itself and the first semiconductor chip 4,
Two semiconductor chips, 8 cathode contacts part increases raised land, substitutes circle electrode 14, electrode 15 and briquetting in former module design
13, become larger with 17 contact surface of client's busbar, the enhancing of module product through-current capability reduces electrode and pressure in former module design
Contact drop between block, to reduce the pressure drop of module.Radiating bottom plate 1 is manufactured with T2 material, using abrasive polishing process, table
Face finish is △ 8, and the radiating bottom plate 11(in the more former module design of surface roughness is formed by equipment smart car) small, radiating bottom plate
Contact closer between 1 and radiator, heat-sinking capability enhancing.Shell is made of shell lower cover 2, outer casing upper cover 16, be PBT or
The shell of PPS material is equipped with plug-type enclosed construction between shell lower cover 2 and outer casing upper cover 16, novel plug-type using this
Structure is easily installed and repairs.First semiconductor chip 4, the power electronics that the second semiconductor chip 8 is diameter Ф 20-40mm
The silicon-controlled or rectifier tube chip of power device, diameter are identical or bigger as the chip diameter in circle electrode structure.Insulation is led
Backing 3 is placed on radiating bottom plate 1, is then successively the first bending electrode 5, electrode 7, the first semiconductor chip 4, the second half is led
Body chip 8, the second bending electrode 6, gate pole component 10, are compressed with fastening screw, and it is complete with plastic cement fastener 9 to push to shell lower cover 2
At encapsulation.First semiconductor chip 4 then accordingly cancels part gate pole component 10 if it is rectifying tube；If the first semiconductor core
Piece 4, the second semiconductor chip 8 are all rectifying tubes, then need directly to cancel gate pole component 10.
Using the first bending electrode 5, the second bending electrode 6, electrode 7 and the first semiconductor chip 4, the second half in shell
Conductor chip 8 is two concatenated controlled silicon chips or rectifier tube chip.
It can also be using the first bending electrode 5, the second bending electrode 6, electrode 7 and the first semiconductor chip, the in shell
Two semiconductor chips, the first semiconductor chip, the second semiconductor chip are concatenated controlled silicon chip and rectifier tube chip.
It can also be using the first bending electrode 5, the second bending electrode 6, electrode 7 and the first semiconductor chip, the in shell
Two semiconductor chips, the first semiconductor chip, the second semiconductor chip are the controlled silicon chip or rectification of two common-anode connections
Tube chip.
It can also be using the first bending electrode 5, the second bending electrode 6, electrode 7 and the first semiconductor chip, the in shell
Two semiconductor chips, the first semiconductor chip, the second semiconductor chip are the controlled silicon chip and one that common-anode connects
Rectifier tube chip.
It can also be using the first bending electrode 5, the second bending electrode 6, electrode 7 and the first semiconductor chip, the in shell
Two semiconductor chips, the first semiconductor chip, the second semiconductor chip are the controlled silicon chip or rectification of two common cathode connections
Tube chip.
It can also be using the first bending electrode 5, the second bending electrode 6, electrode 7 and the first semiconductor chip, the in shell
Two semiconductor chips, the first semiconductor chip, the second semiconductor chip are the controlled silicon chip and one that common cathode connects
Rectifier tube chip.
Manufacturing process:
1, chip: common silicon-controlled or rectifier tube chip is selected；
2, module assembled: by radiating bottom plate 1, insulating heat-conductive piece 3, the first bending electrode 5, the second bending electrode 6, electrode
7, the first semiconductor chip 4, second semiconductor chip 8 etc. successively fit together, with plastic cement fastener 9 and fastening screw pressure
Tightly；
3, it fastens: being pressurizeed with press machine, various parts are compressed；
4, it encapsulates: using sealant, installation door pole piece and shell between shell and radiating bottom plate 1, weld gate pole piece, room temperature
Or 50~80 DEG C of solidifications of heating, curing time 4~10 hours；Silicon is perfused in module and coagulates (rubber) glue, vacuum arranges bubble processing, heating
50~80 DEG C of solidifications, curing time 4~10 hours；
5, it high temperature storage: is stored 72 hours or more in 70~100 DEG C of baking ovens；
6, it tests: with parameters such as the repetitive peak voltage of various equipment test products, gate pole, pressure drop, insulation voltages.
Table 1 is present example actual test data contrast table.Example 413FD module is only one in numerous models
Kind, other model structures are similar with its.The thermal contact resistance schematic diagram of 413FD module of the present invention is as shown in fig. 7,413F3 module is former
The thermal contact resistance schematic diagram of module is as shown in figure 8, temperature sampling point schematic diagram is as shown in Figure 9.413F3D module, 413F3 module
Environment temperature compares through-flow test (all reverse group modules of environmental temperature experiment operational module).
Claims (10)
1. a kind of high current power semiconductor modular, including radiating bottom plate (1), shell lower cover (2), outer casing upper cover (16), insulation
Thermally conductive sheet (3), the first bending electrode (5), the second bending electrode (6), electrode (7), the first semiconductor chip (4), the second half lead
Body chip (8), molybdenum sheet, plastic cement fastener (9), gate pole component (10) and the Silica hydrogel of interior filling or silicon gel rubber layer, it is special
Sign is: first semiconductor chip (4), the second semiconductor chip (8) molybdenum sheet face are towards following direction, it may be assumed that using just
Dress mode；The first bending electrode (5), the second bending electrode (6), electrode (7) are laminated structure electrode；Described
One bending electrode (5), the second bending electrode (6), electrode (7) are in itself and the first semiconductor chip (4), the second semiconductor chip
(8) cathode contacts part increases raised land；The first bending electrode (5), the second bending electrode (6), electrode (7) are
One time punching molded electrode, connecting pin are in 90o bending-like；The radiating bottom plate (1), insulating heat-conductive piece (3), the first bending electricity
After pole (5), the second bending electrode (6), electrode (7), the first semiconductor chip (4), the second semiconductor chip (8) successively assemble
It is compressed with press machine, is compressed by plastic cement fastener (9) and fastening screw, with gate pole component (10) loaded in shell lower cover (2)
It is perfused afterwards with Silica hydrogel or silicon gel rubber, heating cure；It is equipped between the shell lower cover (2) and outer casing upper cover (16) plug-type
Enclosed construction；First bending electrode (5), the second bending electrode (6) chip connecting pin be located at up and down the two of electrode (7)
Side.
2. a kind of high current power semiconductor modular according to claim 1, it is characterised in that: the radiating bottom plate
It (1) is the radiating bottom plate of T2 material, and surface smoothness is △ 8.
3. according to claim 1 or a kind of high current power semiconductor modular described in 2, it is characterised in that: the shell is
It is made of shell lower cover (2), outer casing upper cover (16), is the shell of PBT PPS material.
4. a kind of high current power semiconductor modular according to claim 1 or 2, it is characterised in that: described the first half
Conductor chip (4), the silicon-controlled or rectification of the electric and electronic power device that the second semiconductor chip (8) is diameter Ф 20-40mm
Tube chip.
5. a kind of high current power semiconductor modular according to claim 1 or 2, it is characterised in that: described the first half
Conductor chip, the controlled silicon chip or rectifier tube chip that the second semiconductor chip is two chip-in series.
6. a kind of high current power semiconductor modular according to claim 1 or 2, it is characterised in that: described the first half
Conductor chip, the second semiconductor chip are a concatenated controlled silicon chip and a rectifier tube chip.
7. a kind of high current power semiconductor modular according to claim 1 or 2, it is characterised in that: described the first half
Conductor chip, the controlled silicon chip or rectifier tube chip that the second semiconductor chip is the connection of two common-anodes.
8. a kind of high current power semiconductor modular according to claim 1 or 2, it is characterised in that: described the first half
Conductor chip, the controlled silicon chip and a rectifier tube chip that the second semiconductor chip is common-anode connection.
9. a kind of high current power semiconductor modular according to claim 1 or 2, it is characterised in that: described the first half
Conductor chip, the controlled silicon chip or rectifier tube chip that the second semiconductor chip is the connection of two common cathodes.
10. a kind of high current power semiconductor modular according to claim 1 or 2, it is characterised in that: described the first half
Conductor chip, the controlled silicon chip and a rectifier tube chip that the second semiconductor chip is common cathode connection.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510036757.0A CN105428342B (en) | 2015-01-26 | 2015-01-26 | A kind of high current power semiconductor modular |
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| CN201510036757.0A CN105428342B (en) | 2015-01-26 | 2015-01-26 | A kind of high current power semiconductor modular |
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| CN105428342A CN105428342A (en) | 2016-03-23 |
| CN105428342B true CN105428342B (en) | 2019-02-12 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107768357A (en) * | 2017-10-31 | 2018-03-06 | 华北电力大学 | A kind of power device for realizing internal series-connection |
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| JP2006332291A (en) * | 2005-05-25 | 2006-12-07 | Keihin Corp | Power drive unit |
| CN201514939U (en) * | 2009-06-24 | 2010-06-23 | 湖北台基半导体股份有限公司 | 3600V high-voltage power semiconductor module |
| CN102637611A (en) * | 2012-04-27 | 2012-08-15 | 昆山晨伊半导体有限公司 | Preparation method of AAP power module |
| CN103295920A (en) * | 2012-02-22 | 2013-09-11 | 江苏宏微科技有限公司 | Noninsulated type power module and packaging process thereof |
| CN104218031A (en) * | 2013-05-31 | 2014-12-17 | 湖北台基半导体股份有限公司 | Busbar connection type high-performance IGBT (insulated gate bipolar transistor) module and manufacturing method thereof |
| CN204391106U (en) * | 2015-01-26 | 2015-06-10 | 湖北台基半导体股份有限公司 | A kind of big current power semiconductor modular |
-
2015
- 2015-01-26 CN CN201510036757.0A patent/CN105428342B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332291A (en) * | 2005-05-25 | 2006-12-07 | Keihin Corp | Power drive unit |
| CN201514939U (en) * | 2009-06-24 | 2010-06-23 | 湖北台基半导体股份有限公司 | 3600V high-voltage power semiconductor module |
| CN103295920A (en) * | 2012-02-22 | 2013-09-11 | 江苏宏微科技有限公司 | Noninsulated type power module and packaging process thereof |
| CN102637611A (en) * | 2012-04-27 | 2012-08-15 | 昆山晨伊半导体有限公司 | Preparation method of AAP power module |
| CN104218031A (en) * | 2013-05-31 | 2014-12-17 | 湖北台基半导体股份有限公司 | Busbar connection type high-performance IGBT (insulated gate bipolar transistor) module and manufacturing method thereof |
| CN204391106U (en) * | 2015-01-26 | 2015-06-10 | 湖北台基半导体股份有限公司 | A kind of big current power semiconductor modular |
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