CN102637611A - Preparation method of AAP power module - Google Patents
Preparation method of AAP power module Download PDFInfo
- Publication number
- CN102637611A CN102637611A CN2012101278284A CN201210127828A CN102637611A CN 102637611 A CN102637611 A CN 102637611A CN 2012101278284 A CN2012101278284 A CN 2012101278284A CN 201210127828 A CN201210127828 A CN 201210127828A CN 102637611 A CN102637611 A CN 102637611A
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- Prior art keywords
- aap
- chip
- gate pole
- power model
- gate lead
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Abstract
The invention discloses a preparation method of an AAP power module. A radiating plate, a DBC (Direct Bonding Copper) plate, a metal terminal, a bridge, a molybdenum sheet, a chip, a metal connecting sheet and a gate pole lead are combined together through once vacuum welding to prepare the AAP power module. According to the invention, the gate pole lead and other materials are welded at the same time, so that the complex binding process is omitted and the reliability of the product is obviously increased; and a solder is arranged at the joint of the lower end of the gate pole lead and a chip gate pole, so that the connection of the gate pole lead and the chip gate pole is firmer.
Description
Technical field
The present invention relates to electric and electronic technical field, relate to a kind of manufacturing approach of AAP power model specifically.
Background technology
Power model is a modern power electronic to the necessary electronic device of integrated, microminiaturized development, is a direction of Development of Power Electronic Technology, and is annual in recent years all with 20% speed increase, and development trend still rises continuing.Power model is the core devices of power electronics circuit and control system, and its performance parameter is directly determining the efficient and the reliability of power electronic system.The AAP power model belongs to the power semiconductor product; Its maximum current can reach more than 100 A; If in manufacture process because failure welding; Just will cause the resistance of bad pad to increase, and this failure welding point is exactly the failpoint of future products overcurrent, so improved welding procedure the power consumption of product power model is reduced.Make power model before and adopt manual welding and nation to decide technology always, because of original process using artificial welding make welding reliability to reduce, add manual nation and weld surely and make the soldering reliability of product further reduce.Traditional AAP power model complex structure, production cost is higher, and thermal diffusivity is also relatively poor.
Summary of the invention
Deficiency to prior art the objective of the invention is to, and a kind of manufacturing approach of simple in structure, production cost is low, reliability is high, thermal diffusivity is good AAP power model is provided.
For solving the problems of the technologies described above; The technical scheme that the present invention adopts is: a kind of manufacturing approach of AAP power model; It is characterized in that: through a vacuum welding heating panel, DBC plate, metal terminal, gap bridge, molybdenum sheet, chip, metal connecting sheet, gate lead are combined, processed the AAP power model.
Be followed successively by DBC plate, metal terminal, gap bridge, molybdenum sheet, chip, molybdenum sheet, metal connecting sheet on the described heating panel from bottom to up, described gate lead is located at the chip top.Described gate lead lower end and chip gate pole junction are provided with scolder.
The quantity of said metal terminal is a plurality of.
The quantity of said gate lead is 2.
Compared with prior art; Advantage of the present invention is: through a vacuum welding heating panel, DBC plate, metal terminal, gap bridge, molybdenum sheet, chip, metal connecting sheet, gate lead are combined; Because gate lead and other materials weld completion simultaneously; Decide technology so saved loaded down with trivial details nation, reliability of products is obviously improved; Gate lead lower end and chip gate pole junction are provided with scolder, make more firm that gate lead is connected with the chip gate pole.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Embodiment
For further disclosing technical scheme of the present invention; Be described with reference to the accompanying drawings execution mode of the present invention: as shown in Figure 1 at present; The present invention combines heating panel 1, DBC plate 2, metal terminal 3, gap bridge 4, molybdenum sheet 5, chip 6, metal connecting sheet 7, gate lead 8 through a vacuum welding, processes the AAP power model.Because gate lead 8 is welded completion simultaneously with other materials, decides technology so saved loaded down with trivial details nation, and reliability of products is obviously improved.
Be followed successively by DBC plate 2, metal terminal 4, gap bridge 5, molybdenum sheet 5, chip 6, molybdenum sheet 5, metal connecting sheet 7 on the heating panel 1 from bottom to up, gate lead 8 is located at chip 5 tops.Gate lead 8 lower ends and chip 6 gate pole junctions are provided with scolder 9.The quantity of metal terminal 3 is a plurality of.The quantity of gate lead 8 is 2.
More than, basic design of the present invention and basic principle have been set forth through introduction to listed execution mode.But the present invention never is limited to above-mentioned listed execution mode, and every equivalent variations, improvement and deliberately of inferior quality behavior of doing based on technical scheme of the present invention of change all should belong to protection scope of the present invention.
Claims (5)
1. the manufacturing approach of an AAP power model is characterized in that: through a vacuum welding heating panel, DBC plate, metal terminal, gap bridge, molybdenum sheet, chip, metal connecting sheet, gate lead are combined, processed the AAP power model.
2. the manufacturing approach of a kind of AAP power model according to claim 1; It is characterized in that: be followed successively by DBC plate, metal terminal, gap bridge, molybdenum sheet, chip, molybdenum sheet, metal connecting sheet on the described heating panel from bottom to up, described gate lead is located at the chip top.
3. the manufacturing approach of a kind of AAP power model according to claim 1 is characterized in that: described gate lead lower end and chip gate pole junction are provided with scolder.
4. the manufacturing approach of a kind of AAP power model according to claim 1 is characterized in that: the quantity of said metal terminal is a plurality of.
5. the manufacturing approach of a kind of AAP power model according to claim 1 is characterized in that: the quantity of said gate lead is 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101278284A CN102637611A (en) | 2012-04-27 | 2012-04-27 | Preparation method of AAP power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101278284A CN102637611A (en) | 2012-04-27 | 2012-04-27 | Preparation method of AAP power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102637611A true CN102637611A (en) | 2012-08-15 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101278284A Pending CN102637611A (en) | 2012-04-27 | 2012-04-27 | Preparation method of AAP power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102637611A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428342A (en) * | 2015-01-26 | 2016-03-23 | 湖北台基半导体股份有限公司 | High-current power semiconductor module |
| CN105448900A (en) * | 2015-01-26 | 2016-03-30 | 湖北台基半导体股份有限公司 | High-frequency low-pressure-drop power semiconductor module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1542957A (en) * | 2003-03-26 | 2004-11-03 | ��ʽ�����װ | Semiconductor device |
| CN101179055A (en) * | 2007-12-14 | 2008-05-14 | 江苏宏微科技有限公司 | Semi-conductor power module and dissipating heat method thereof |
| CN101399237A (en) * | 2008-10-24 | 2009-04-01 | 江阴市赛英电子有限公司 | Rapid heat radiation ceramic case formed by full compression joint |
| CN101771338A (en) * | 2008-12-31 | 2010-07-07 | 中国航空工业第一集团公司第六三一研究所 | Switching power supply module with high reliability and low power consumption |
-
2012
- 2012-04-27 CN CN2012101278284A patent/CN102637611A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1542957A (en) * | 2003-03-26 | 2004-11-03 | ��ʽ�����װ | Semiconductor device |
| CN101179055A (en) * | 2007-12-14 | 2008-05-14 | 江苏宏微科技有限公司 | Semi-conductor power module and dissipating heat method thereof |
| CN101399237A (en) * | 2008-10-24 | 2009-04-01 | 江阴市赛英电子有限公司 | Rapid heat radiation ceramic case formed by full compression joint |
| CN101771338A (en) * | 2008-12-31 | 2010-07-07 | 中国航空工业第一集团公司第六三一研究所 | Switching power supply module with high reliability and low power consumption |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428342A (en) * | 2015-01-26 | 2016-03-23 | 湖北台基半导体股份有限公司 | High-current power semiconductor module |
| CN105448900A (en) * | 2015-01-26 | 2016-03-30 | 湖北台基半导体股份有限公司 | High-frequency low-pressure-drop power semiconductor module |
| CN105428342B (en) * | 2015-01-26 | 2019-02-12 | 湖北台基半导体股份有限公司 | A kind of high current power semiconductor modular |
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Application publication date: 20120815 |