CN107768357A - A kind of power device for realizing internal series-connection - Google Patents
A kind of power device for realizing internal series-connection Download PDFInfo
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- CN107768357A CN107768357A CN201711053619.9A CN201711053619A CN107768357A CN 107768357 A CN107768357 A CN 107768357A CN 201711053619 A CN201711053619 A CN 201711053619A CN 107768357 A CN107768357 A CN 107768357A
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- boss
- power device
- molybdenum sheet
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- conducting strip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Die Bonding (AREA)
Abstract
The invention discloses a kind of power device for realizing internal series-connection.The power device includes conductive cover plate, chip, boss and the electrically-conductive backing plate set gradually from top to bottom；Boss includes higher-pressure region boss and low-pressure area boss；The first molybdenum sheet, chip, the second molybdenum sheet, conducting strip and the first cross-over block are set gradually between higher-pressure region boss and conductive cover plate from top to bottom；The second cross-over block, conducting strip, the 3rd molybdenum sheet, chip and the 4th molybdenum sheet are set gradually between low-pressure area boss and conductive cover plate from top to bottom；One end of conducting strip is arranged between the second molybdenum sheet and the first cross-over block, and the other end of conducting strip is arranged between the second cross-over block and the 3rd molybdenum sheet, realizes that the chip on the boss of higher-pressure region is connected with the chip on low-pressure area boss.Therefore, power device provided by the invention, the chip-scale series connection inside power device module is realized, the volume and weight of power device packaging structure is reduced, reduces cost, improve the reliability of power device packaging structure.
Description
Technical field
The present invention relates to power device package field, more particularly to a kind of power device for realizing internal series-connection.
Background technology
In engineering practice, many application scenarios are required for the power device of high withstand voltage.Existing commercial power device it is resistance to
Press limited in one's ability, few one single chips can reach more than 6500V's.In order to realize high withstand voltage characteristic, consider from technique,
The thickness that the power device needs to increase drift region layer improves the ability of blocking voltage.And thicker drift region growth technique,
It it is also difficult to achieve at present.In addition, with the increase of drift region thickness, because conductivity modulation effect can be brought when power device turns on
More carrier injections, cause power device turn-off speed slack-off, turn-off power loss increase.Even if prepared using the above method
The power device of high withstand voltage, also can it is low because of performance, cost is high, and lose practical value.
Used to solve the above problems, it is necessary to which multiple power devices are connected.At present, due to compression joint type power device phase
There is two-side radiation for traditional welding type power device, be easy to series connection, so using compression joint type work(in the prior art
Rate devices in series realizes high withstand voltage characteristic.The method of compression joint type power device series connection is the series connection of power device module level, is had
Body is：The main body of series connection compression joint type power device is some crimp type power devices, in the side of single crimp type power device
Place radiator with reduce temperature inside crimp type power device can normal work, by crimp type power device bottom surface
Connecting for compression joint type power device is realized with the radiator top surface electrical connection of next crimp type power device.By in crimp type
The pressure bulb for applying pressure effect is played in the connection of power device bottom part down, is connected in crimp type power device over top
To the spring of cushioning effect, to offset thermal expansion caused by each crimp type power device inner member, reduce crimp type power
The thermal stress that device inside chip is subject to, improves the reliability of crimp type power device, and driving and protection circuit can be realized pair
The driving and protection of chip in each crimp type power device.Because each crimp type power device is both needed to respective radiator
With driving and the device such as protection circuit, it will be apparent that increase the volume and again of whole series connection crimp type power device packaging structure
Amount, therefore power density is very low, cost is higher；Further, due to power electronic equipment work in high frequency, crimp type power of connecting
The volume of device encapsulation structure is larger, and calculating and the optimization of parasitic parameter are difficult to, and easily cause larger electromagnetic interference, shadow
Ring the reliability of crimp type power device.Therefore, the volume and cost of series connection crimp type power device packaging structure how are reduced,
The reliability of the crimp type power device of series connection is improved, is the technical problem that current power device package field is badly in need of solving.
The content of the invention
It is an object of the invention to provide a kind of power device for realizing internal series-connection, can realize compression joint type power device mould
Chip-scale series connection inside block, the volume and weight of crimp type power device packaging structure is reduced, so as to reduce cost, improves pressure
The reliability of direct type power device packaging structure.
To achieve the above object, the invention provides following scheme：
A kind of power device for realizing internal series-connection, the power device are crimping type packaging structure, the power device
Including conductive cover plate, chip, boss and the electrically-conductive backing plate set gradually from top to bottom；The boss includes higher-pressure region boss and low
Nip boss；The first molybdenum sheet, the chip, are set gradually between the higher-pressure region boss and the conductive cover plate from top to bottom
Two molybdenum sheets, conducting strip and the first cross-over block；Set gradually from top to bottom between the low-pressure area boss and the conductive cover plate
Second cross-over block, the conducting strip, the 3rd molybdenum sheet, the chip and the 4th molybdenum sheet；One end of the conducting strip is arranged on institute
State between the second molybdenum sheet and first cross-over block, the other end of the conducting strip is arranged on second cross-over block and institute
State between the 3rd molybdenum sheet；The chip and the low-pressure area boss that the conducting strip is used to realize on the higher-pressure region boss
The chip connection.
Optionally, the conducting strip is shaped as fold-line-shaped；When the conducting strip is horizontal positioned, one end of the conducting strip
Higher than the other end of the conducting strip.
Optionally, the conducting strip is to be formed by connecting by two identical rectangle electrically conductive layer structures by setting-out.
Optionally, the power device also includes silver-colored pad；The silver-colored pad includes the first silver medal pad and the second silver medal pad；
The first silver medal pad is arranged between the higher-pressure region boss and first cross-over block；The second silver medal pad is arranged on
Between the low-pressure area boss and the 4th molybdenum sheet.
Optionally, the power device also includes spring thimble；The spring thimble includes the first spring thimble and second
Spring thimble；Described first spring thimble one end is connected with the control pole of the chip on the higher-pressure region boss, and described
The one spring thimble other end is connected with the conducting strip；Described second spring thimble one end with it is described on the low-pressure area boss
The control pole connection of chip, the second spring thimble other end are connected with the second silver medal pad.
Optionally, the silver-colored pad, first molybdenum sheet, second molybdenum sheet, the 3rd molybdenum sheet, the 4th molybdenum
Piece, the chip and the cross-over block are the rectangular sheet structure that parameter differs, and coaxial with the boss
The heart；The thickness of the silver-colored pad is less than the thickness of the chip；The silver-colored pad is used for when the silver-colored pad deformation, alleviates institute
State the thermal stress that chip is subject to；First molybdenum sheet, second molybdenum sheet, the 3rd molybdenum sheet and the 4th molybdenum sheet are used for
Protect the chip；First molybdenum sheet, second molybdenum sheet, the thickness of the 3rd molybdenum sheet and the 4th molybdenum sheet are big
In the thickness of the chip.
Optionally, the electrically-conductive backing plate is cylindrical laminate structure；The conductive cover plate is cylindrical laminate structure, and with
The electrically-conductive backing plate is concentric.
Optionally, the boss electrically connects with the electrically-conductive backing plate；The number of the boss is even number；The boss is with institute
State symmetrical centered on the center of circle of electrically-conductive backing plate；The boss is solid square structure.
Optionally, the higher-pressure region boss is identical with the number of the low-pressure area boss；The higher-pressure region boss with it is described
Gap between low-pressure area boss is identical.
Optionally, the power device also includes housing, and the conductive cover plate and the electrically-conductive backing plate pass through the housing
Connection.
According to specific embodiment provided by the invention, the invention discloses following technique effect：
The invention provides a kind of power device for realizing internal series-connection, the power device includes setting gradually from top to bottom
Conductive cover plate, chip, boss and electrically-conductive backing plate；The boss includes higher-pressure region boss and low-pressure area boss；The higher-pressure region
The first molybdenum sheet, the chip, the second molybdenum sheet, conducting strip and first are set gradually between boss and the conductive cover plate from top to bottom
Cross-over block；The second cross-over block is set gradually between the low-pressure area boss and the conductive cover plate from top to bottom, described is led
Electric piece, the 3rd molybdenum sheet, the chip and the 4th molybdenum sheet；One end of the conducting strip is arranged on second molybdenum sheet and described first
Between cross-over block, the other end of the conducting strip is arranged between second cross-over block and the 3rd molybdenum sheet, is used for
The connection of the chip and the chip on the low-pressure area boss on the higher-pressure region boss is realized, ensures the crimping
The chip in formula power device only has a conductive path.Therefore, using power device provided by the invention, pressure is realized
The chip-scale series connection inside formula power device module is connect, reduces the volume and weight of crimp type power device packaging structure, from
And cost is reduced, improve the reliability of crimp type power device packaging structure.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to institute in embodiment
The accompanying drawing needed to use is briefly described, it should be apparent that, drawings in the following description are only some implementations of the present invention
Example, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these accompanying drawings
Obtain other accompanying drawings.
Fig. 1 is the structure front view of power device of the embodiment of the present invention；
Fig. 2 is the front view of the conducting strip of power device of the embodiment of the present invention.
Fig. 3 is the top view of the conducting strip of power device of the embodiment of the present invention；
Fig. 4 is the electrically-conductive backing plate of power device of the embodiment of the present invention and the top view of boss.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
It is an object of the invention to provide a kind of power device for realizing internal series-connection, can realize compression joint type power device mould
Chip-scale series connection inside block, the volume and weight of crimp type power device packaging structure is reduced, so as to reduce cost, improves pressure
The reliability of direct type power device packaging structure.
In order to facilitate the understanding of the purposes, features and advantages of the present invention, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is further detailed explanation.
Fig. 1 is the structure front view of power device of the embodiment of the present invention.
As shown in figure 1, the invention provides a kind of power device for realizing internal series-connection, the power device is compression joint type
Encapsulating structure.
The power device includes conductive cover plate 1, chip 2, boss 3 and the electrically-conductive backing plate 4 set gradually from top to bottom.Institute
Stating boss 3 includes higher-pressure region boss 301 and low-pressure area boss 302.Between the higher-pressure region boss 302 and the conductive cover plate 1
The first molybdenum sheet 5, the chip 2, the second molybdenum sheet 6, the cross-over block 8 of conducting strip 7 and first are set gradually from top to bottom.The low pressure
The second cross-over block 9, the conducting strip 7, the 3rd molybdenum are set gradually between area's boss 302 and the conductive cover plate 1 from top to bottom
Piece 10, the molybdenum sheet 11 of the chip 2 and the 4th.One end of the conducting strip 7 is arranged on second molybdenum sheet 6 and the described first insulation
Between cushion block 8, the other end of the conducting strip 7 is arranged between second cross-over block 9 and the 3rd molybdenum sheet 10, is used for
Realize the connection of the chip and the chip on the low-pressure area boss on the higher-pressure region boss.
The power device also includes silver-colored pad 12.The silver-colored pad 12 includes the first silver medal pad and the second silver medal pad.Institute
The first silver medal pad is stated to be arranged between the higher-pressure region boss 301 and first cross-over block 8.The second silver medal pad is set
Between the low-pressure area boss 302 and the 4th molybdenum sheet 11.
The power device also includes spring thimble.The spring thimble includes the first spring thimble and second spring top
Pin.Described first spring thimble one end is connected with the control pole of the chip 2 on the higher-pressure region boss 301, and described first
The spring thimble other end is connected with the conducting strip 7.Described second spring thimble one end and the institute on the low-pressure area boss 302
The control pole connection of chip 2 is stated, the second spring thimble other end is connected with the second silver medal pad.
The power device also includes housing 13.The housing 13 is used for the side wrap of power device.The housing
13 top edge is connected with the conductive cover plate 1, and the lower edge of the housing 13 is connected with the electrically-conductive backing plate 4, described in realization
Conductive cover plate 1 is connected with the electrically-conductive backing plate 4 by the housing 13.Housing 13 is made of rigid material and formed, internal
Filled media.
Wherein, the silver-colored pad 12, first molybdenum sheet 5, second molybdenum sheet 6, the 3rd molybdenum sheet 10, the described 4th
Molybdenum sheet 11, the chip 2 and the cross-over block are the rectangle laminate structure that parameter differs, and with the boss
2 is concentric.The thickness of the silver-colored pad 12 is less than the thickness of the chip 2.The silver-colored pad 12 is used to work as the silver-colored pad shape
During change, alleviate the thermal stress that the chip is subject to.First molybdenum sheet 5, second molybdenum sheet 6, the 3rd molybdenum sheet 10 and
4th molybdenum sheet 11 is used to protect the chip 2.First molybdenum sheet 5, second molybdenum sheet 6, the 3rd molybdenum sheet 10 with
And the thickness of the 4th molybdenum sheet 11 is all higher than the thickness of the chip 2.
Chip 2 on low-pressure area boss 302 is electrically connected on low-pressure area boss 303 by the 4th molybdenum sheet 11 and the second silver medal pad
Surface, the chip 2 on low-pressure area boss 302 are electrically connected to the lower surface of conducting strip 7 by the 3rd molybdenum sheet 10.Higher-pressure region boss
Chip 2 on 301 electrically connects the upper surface of conducting strip 7 by the second molybdenum sheet 6, and the chip 2 on higher-pressure region boss 301 passes through first
Molybdenum sheet 5 electrically connect conductive cover plate 1 lower surface, at this moment between the conducting strip 7 on low-pressure area boss 302 and conductive cover plate 1 and
Space be present between the first silver medal pad and conducting strip 7 on higher-pressure region boss 301, led to ensure that each chip 2 only has one
Electric pathway, and meet when power device is crimped the flatness of each component, cross-over block is added between two spaces, is filled out
Full space.
The electrically-conductive backing plate 4 is cylindrical laminate structure, bottom plate of the electrically-conductive backing plate 4 as whole power device, remaining group
Part grows up by it and formed.The conductive cover plate 1 is cylindrical laminate structure, and concentric with the electrically-conductive backing plate 4.
The boss 3 electrically connects with the electrically-conductive backing plate 4.The number of the boss 3 is even number.The boss 3 is with described
It is symmetrical centered on the center of circle of electrically-conductive backing plate.The boss 3 is solid square structure.
The higher-pressure region boss 301 is identical with the number of the low-pressure area boss 302.The higher-pressure region boss 301 and institute
The gap stated between low-pressure area boss 302 is identical.The higher-pressure region boss 301 is set up in parallel with the low-pressure area boss 302.
When overlooking the low-pressure area of power device, the second cross-over block 9, the conducting strip 7, the 3rd molybdenum sheet 10, the core
Piece 2, the 4th molybdenum sheet 11, the center of the second silver medal pad and low-pressure area boss 302 overlap.
When overlooking the higher-pressure region of power device, the first molybdenum sheet 5, the chip 2, the second molybdenum sheet 6, conducting strip 7, first are exhausted
The center of edge cushion block 8, the first silver medal pad and higher-pressure region boss 301 overlaps.
Fig. 2 is the front view of the conducting strip of power device of the embodiment of the present invention.
As shown in Fig. 2 the conducting strip 7 is shaped as fold-line-shaped.When the conducting strip 7 is horizontal positioned, the conducting strip 7
One end 701 be higher than the conducting strip 7 the other end 702.
Fig. 3 is the top view of the conducting strip of power device of the embodiment of the present invention.As shown in figure 3, the conducting strip 7 is by two
Individual identical the first rectangle electrically conductive layer structure 7 (1) and the second rectangle electrically conductive layer structure 7 (2) are connected by thin-walled setting-out
Connect and form, concrete operations are：Second rectangle electrically conductive layer structure 7 (2) is placed on the first rectangle electrically conductive layer structure 7 (1)
In the projection of place plane, and overlapped with the width of the first rectangle electrically conductive layer structure 7 (1), in the first rectangle electrically conductive layer
Relative wide of structure 7 (1) and second 7 (2) of rectangle electrically conductive layer structure carries out thin-walled setting-out between the face of high formation, such as schemes
Shown in 3 dash areas.The conducting strip structure of the thin-walled entity of transition generation is carried out between the facial contour that both face projections overlap
Design, can form the conductive channel of chip in compression joint type power device module, realize the core in compression joint type power device module
Chip level is connected.In addition, conducting strip by adjacent chip-in series, has elongated the spacing of high-low voltage, be advantageous to the realization of insulation.
Power device provided by the invention realizes the series connection of layers of chips incessantly, can also realize the series connection of multilayer chiop.
In addition, in order to which beneficial to parasitic parameter is reduced in insulation processing and power device, number and the arrangement mode of chip can
Varied, the number and arrangement mode of boss are also diversified.
Fig. 4 is the electrically-conductive backing plate of power device of the embodiment of the present invention and the top view of boss.
With reference to shown in Fig. 1 and Fig. 4, the number of boss 3 is 16, and four rows four row are placed on electrically-conductive backing plate 1, and outside two arranges
Boss is higher-pressure region boss 301, and the row boss of inner side two is low-pressure area boss 302, the component and figure of the connection of Fig. 4 mesolows area boss
The component of 1 mesolow area boss connection is identical, and the annexation and Fig. 1 mesolows of Fig. 4 mesolows area's boss and each component
Area's boss is identical with the annexation of each component.The component of Fig. 4 mesohighs area boss connection is connected with Fig. 1 mesohighs area boss
Component it is identical, and the annexation of Fig. 4 mesohighs area's boss and each component and Fig. 1 mesohighs area's boss and each component
Annexation is identical, no longer illustrates herein.
Compared with prior art, improved relative to the series connection of module level, power device provided by the invention in power device
When chip voltage grade and power grade, the series connection of power device module inside chip is realized, reduces power electronic equipment
Volume and weight, so as to reduce cost, improve the power density and conversion efficiency of power device.In addition, power device mould
Block internal series-connection is integrated to be not only contributed to optimize parasitic parameter, but also improves the performance power device of device to greatest extent
Part.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
Specific case used herein is set forth to the principle and embodiment of the present invention, and above example is said
It is bright to be only intended to help the method and its core concept for understanding the present invention；Meanwhile for those of ordinary skill in the art, foundation
The thought of the present invention, in specific embodiments and applications there will be changes.In summary, this specification content is not
It is interpreted as limitation of the present invention.
Claims (10)
1. a kind of power device for realizing internal series-connection, the power device is crimping type packaging structure, it is characterised in that described
Power device includes conductive cover plate, chip, boss and the electrically-conductive backing plate set gradually from top to bottom；The boss includes higher-pressure region
Boss and low-pressure area boss；The first molybdenum sheet, institute are set gradually between the higher-pressure region boss and the conductive cover plate from top to bottom
State chip, the second molybdenum sheet, conducting strip and the first cross-over block；Between the low-pressure area boss and the conductive cover plate from top to bottom
Set gradually the second cross-over block, the conducting strip, the 3rd molybdenum sheet, the chip and the 4th molybdenum sheet；One end of the conducting strip
It is arranged between second molybdenum sheet and first cross-over block, the other end of the conducting strip is arranged on second insulation
Between cushion block and the 3rd molybdenum sheet；The chip and the low pressure that the conducting strip is used to realize on the higher-pressure region boss
The connection of the chip on area's boss.
2. power device according to claim 1, it is characterised in that the conducting strip is shaped as fold-line-shaped；It is described to lead
When electric piece is horizontal positioned, one end of the conducting strip is higher than the other end of the conducting strip.
3. power device according to claim 1, it is characterised in that the conducting strip is led by two identical rectangles
Electric laminate structure is formed by connecting by setting-out.
4. power device according to claim 1, it is characterised in that the power device also includes silver-colored pad；The silver
Pad includes the first silver medal pad and the second silver medal pad；The first silver medal pad is arranged on the higher-pressure region boss and described first exhausted
Between edge cushion block；The second silver medal pad is arranged between the low-pressure area boss and the 4th molybdenum sheet.
5. power device according to claim 4, it is characterised in that the power device also includes spring thimble；It is described
Spring thimble includes the first spring thimble and second spring thimble；On described first spring thimble one end and the higher-pressure region boss
The chip control pole connection, the first spring thimble other end is connected with the conducting strip；The second spring top
Pin one end is connected with the control pole of the chip on the low-pressure area boss, the second spring thimble other end and described the
Two silver medal pads connect.
6. power device according to claim 4, it is characterised in that the silver-colored pad, first molybdenum sheet, described second
Molybdenum sheet, the 3rd molybdenum sheet, the 4th molybdenum sheet, the chip and the cross-over block are the rectangle that parameter differs
Flake structure, and it is concentric with the boss；The thickness of the silver-colored pad is less than the thickness of the chip；The silver-colored pad is used
When the silver-colored pad deformation, alleviate the thermal stress that the chip is subject to；It is first molybdenum sheet, second molybdenum sheet, described
3rd molybdenum sheet and the 4th molybdenum sheet are used to protect the chip；First molybdenum sheet, second molybdenum sheet, the 3rd molybdenum
The thickness of piece and the 4th molybdenum sheet is all higher than the thickness of the chip.
7. power device according to claim 1, it is characterised in that the electrically-conductive backing plate is cylindrical laminate structure；Institute
It is cylindrical laminate structure to state conductive cover plate, and concentric with the electrically-conductive backing plate.
8. power device according to claim 1, it is characterised in that the boss electrically connects with the electrically-conductive backing plate；Institute
The number for stating boss is even number；The boss is symmetrical centered on the center of circle of the electrically-conductive backing plate；The boss is solid
Square structure.
9. power device according to claim 1, it is characterised in that the higher-pressure region boss and the low-pressure area boss
Number is identical；Gap between the higher-pressure region boss and the low-pressure area boss is identical.
10. power device according to claim 1, it is characterised in that the power device also includes housing, the conduction
Cover plate is connected with the electrically-conductive backing plate by the housing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711053619.9A CN107768357A (en) | 2017-10-31 | 2017-10-31 | A kind of power device for realizing internal series-connection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711053619.9A CN107768357A (en) | 2017-10-31 | 2017-10-31 | A kind of power device for realizing internal series-connection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107768357A true CN107768357A (en) | 2018-03-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711053619.9A Pending CN107768357A (en) | 2017-10-31 | 2017-10-31 | A kind of power device for realizing internal series-connection |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400831A (en) * | 2013-07-22 | 2013-11-20 | 国家电网公司 | All-crimping type insulated gate bipolar transistor (IGBT) module and assembling method thereof |
| CN105428342A (en) * | 2015-01-26 | 2016-03-23 | 湖北台基半导体股份有限公司 | High-current power semiconductor module |
| CN206163475U (en) * | 2016-11-23 | 2017-05-10 | 南方电网科学研究院有限责任公司 | Semiconductor device packaging structure |
-
2017
- 2017-10-31 CN CN201711053619.9A patent/CN107768357A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400831A (en) * | 2013-07-22 | 2013-11-20 | 国家电网公司 | All-crimping type insulated gate bipolar transistor (IGBT) module and assembling method thereof |
| CN105428342A (en) * | 2015-01-26 | 2016-03-23 | 湖北台基半导体股份有限公司 | High-current power semiconductor module |
| CN206163475U (en) * | 2016-11-23 | 2017-05-10 | 南方电网科学研究院有限责任公司 | Semiconductor device packaging structure |
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