CN109003965A - Thyristor module component - Google Patents
Thyristor module component Download PDFInfo
- Publication number
- CN109003965A CN109003965A CN201810970676.1A CN201810970676A CN109003965A CN 109003965 A CN109003965 A CN 109003965A CN 201810970676 A CN201810970676 A CN 201810970676A CN 109003965 A CN109003965 A CN 109003965A
- Authority
- CN
- China
- Prior art keywords
- insulating
- radiator
- chip
- conducting block
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 32
- 238000009413 insulation Methods 0.000 claims abstract description 27
- 239000000084 colloidal system Substances 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004568 cement Substances 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 239000003292 glue Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 229910017083 AlN Inorganic materials 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 4
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 4
- 239000011224 oxide ceramic Substances 0.000 description 4
- 239000003245 coal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000017 hydrogel Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thyristors (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A kind of thyristor module component.It can solve problem existing for existing thyristor component.Including heat-sink unit, thyristor circuit unit, insulating unit, heat-sink unit includes lower radiator, upper radiator, fastening bolt；Thyristor circuit unit includes lower electrode, the first chip, the second cathode briquetting, the first cathode briquetting, the first conducting block, the second chip, the second conducting block, top electrode；Insulating unit includes insulation colloid, insulation shell, insulating ceramics, insulating sleeve, insulating part, insulation colloid be wrapped in from the first conducting block and the second conducting block middle and lower part begin to pass through the first cathode briquetting, the second chip, the first chip, the second cathode briquetting, on lower electrode to lower radiator, insulation colloid lateral outer side is wrapped up by insulation shell, it is filled by insulating ceramics in gap between lower electrode and lower radiator, the left side of lower electrode is isolated by insulating part, and the insulating sleeve is socketed on the outside of fastening bolt.Structure is simple and novel, operates and easy to use and practical.
Description
Technical field
The invention belongs to power semiconductor device technology fields, and in particular to a kind of thyristor module component.
Background technique
Currently, domestic coal mining soft starter is using plate thyristor component as power component；In the thyristor component
Inside, thyristor chip are encapsulated in shell, and the both ends of shell are connected with radiator respectively, extraction of the radiator as thyristor
Electrode.It since radiator charges, does not simply fail to integrate three road thyristors to install, but also insulating support need to be increased, increase
Big equipment volume；It is explosion-proof tank that the specific work environments such as coal mine, which require apparatus casing, in this way, will result in heat in equipment
Accumulation, heat can not shed at all, reduce its service life, increase work risk factor in cabinet.
Summary of the invention
To solve the problems, such as only consider Insulation Problems existing for existing thyristor component, it is also contemplated that thyristor is first
When part works the heat that distributes how to conduct or partial conductance to equipment box except, and then provide a kind of thyristor module group
Part.For this purpose, the invention proposes the following technical solutions:
A kind of thyristor module component, including heat-sink unit, thyristor circuit unit and insulating unit, the heat-sink unit packet
It includes lower radiator, upper radiator and connect lower radiator with upper radiator to compress the fastening bolt of in-between component；
The thyristor circuit unit includes lower electrode above the lower radiator, the first chip for being connected to lower electrode upper end and the
Two cathode briquettings, are connected between the first cathode briquetting and upper radiator the first cathode briquetting being connected on the first chip
First conducting block, the second chip being connected on the second cathode briquetting, be connected between the second chip and upper radiator second
Conducting block, and the top electrode being electrically connected with upper radiator；The insulating unit includes insulation colloid, insulation shell, insulation pottery
Porcelain, insulating sleeve, insulating part, wherein the insulating cement body be wrapped in since the first conducting block and the second conducting block middle and lower part through
Cross the first cathode briquetting, the second chip, the first chip, the second cathode briquetting, lower electrode to lower radiator upper surface, insulating cement
Body lateral outer side is wrapped up by insulation shell, and the gap between lower electrode and lower radiator is filled by insulating ceramics, the lower electrode
Left side there is bent angle exposed portion to be isolated by insulating part, the socket insulating sleeve on the outside of the fastening bolt.
The insulating ceramics is made of aluminium nitride ceramics.
First conducting block and the second conducting block are conductive copper billet made of copper.
The lower radiator is made of aluminium sheet or copper sheet.
Beneficial effects of the present invention: it can effectively realize and achieve the purpose that the insulation system of two-side radiation, additionally
With thyristor operational heat is conducted to lower radiator by insulating ceramic film, and between lower radiator and the electrode of thyristor
Insulation, so, lower radiator is adjacent to anti-explosion box body inner wall, partial heat can be conducted by cabinet to the external world, be reduced anti-
The quick-fried intracorporal accumulation of heat of case reduces the failure rate of equipment operation etc. multi-effect；Structure is simple and novel, operation and use
It is convenient and practical.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention.
In figure: radiator under 1-, the first chip of 2-, electrode under 3-, 4- insulate colloid, 5- the second cathode briquetting, 6- insulation
Ceramics, 7- insulation shell, 8- insulating sleeve, 9- insulating part, 10- fastening bolt, the upper radiator of 11-, 12- conduction copper billet, on 13-
Electrode, 14- the first cathode briquetting, the second chip of 15-, the second conducting block of 16-.
Specific embodiment
In order to make it easy to understand, being further illustrated below with reference to Fig. 1 to the present invention:
The present invention is to solve the problems, such as Insulation Problems cannot be only considered, it is also contemplated that thyristor existing for existing thyristor component
The heat distributed when element manipulation how to conduct or partial conductance to equipment box except, and then provide a kind of thyristor module
Component.Following embodiment is proposed thus:
Embodiment 1: a kind of thyristor module component, including heat-sink unit, thyristor circuit unit and insulating unit, it is described to dissipate
Hot cell includes lower radiator 1, upper radiator 11 and connect lower radiator 1 with upper radiator 11 to compress intermediate portion
The fastening bolt 10 of part；The thyristor circuit unit includes the lower electrode 3 for being in lower 1 top of radiator, is connected to lower electrode 3
The first chip 2 and the second cathode briquetting 5 of upper end, the first cathode briquetting 14 being connected on the first chip 2 are connected to the first yin
The first conducting block 12 between extreme pressure block 14 and upper radiator 11, the second chip 15 being connected on the second cathode briquetting 5, connection
The second conducting block 16 between the second chip 15 and upper radiator 11, and the top electrode 13 being electrically connected with upper radiator 11；
The insulating unit includes insulation colloid 4, insulation shell 7, insulating ceramics 6, insulating sleeve 8, insulating part 9, wherein the insulation
Colloid 4 is wrapped in from the first conducting block 12 and 16 middle and lower part of the second conducting block and begins to pass through the first cathode briquetting 14, the second chip
15, the first chip 2, the second cathode briquetting 5, lower electrode 3 to lower 1 upper surface of radiator, 4 lateral outer side of colloid that insulate is by insulating
Shell 7 wraps up, and the gap between lower electrode 3 and lower radiator 1 is filled by insulating ceramics 6, learnt by applicant's many experiments,
It has extremely outstanding conductive force while electric isolution between lower electrode 3 and lower radiator 1 by insulating ceramics 6,
It is capable of the heat of very effective its storage inside of export, then cooperates the special designing of the internal structure connection relationship of this product,
Better, significantly more efficient heat dissipation effect can be improved in the case where normal be electrically isolated；The left side of the lower electrode 3 has curved
Angle exposed portion is isolated by insulating part 9, and the insulating sleeve 8 is socketed on the outside of the fastening bolt 10.
Embodiment 2, it is preferred that the insulating ceramics 6 is made of aluminium nitride ceramics.
Embodiment 3, it is preferred that first conducting block 12 and the second conducting block 16 are conductive copper billet made of copper.
Embodiment 4, it is preferred that the lower radiator 1 is made of aluminium sheet or copper sheet.
For realize two-side radiation insulation system, using the material of high-breakdown-voltage and thermal coefficient as electric isolution main body,
Customary insulation ceramics mainly have the aluminium oxide ceramics of aluminium nitride ceramics, beryllium oxide ceramics and Al2O3 content 96%.
Aluminium oxide ceramics, breakdown voltage 14kV/mm, thermal coefficient 20W/m K,
Beryllium oxide ceramics, breakdown voltage 15kV/mm, thermal coefficient 200 ~ 250W/m K,
Aluminium nitride ceramics, breakdown voltage 14kV/mm, for thermal coefficient up to 170W/m K, insulation performance and thermal conduction characteristic are close
Beryllium oxide ceramics is good insulating heat-conduction material, and beryllium oxide ceramics has toxicity, so selected aluminium nitride ceramics is insulation
Ceramic material.
On the boundary of insulating ceramics substrate, fill Silica hydrogel or silicon rubber etc. and insulate colloid, breakdown voltage 10KV/mm with
On.The thickness of alumimium nitride ceramic sheet is not less than 1.0mm, fully meets the dielectric strength of electric isolution.
As 7075 allumens of radiator, thermal coefficient 150 ~ 175W/m K, the thickness of alumimium nitride ceramic sheet is not
More than 2mm, by thermal resistance calculation formula
θ=L/ (λ S)
In formula, θ --- alumimium nitride ceramic sheet thermal resistance
L --- alumimium nitride ceramic sheet thickness
λ --- aluminium nitride ceramics thermal coefficient
S --- alumimium nitride ceramic sheet area
It is calculated by alumimium nitride ceramic sheet diameter 55mm, maximum gauge 2.0mm, increased potsherd thermal resistance is only 0.0156K/W, right
The influence very little of heat transfer, theoretic breakdown voltage but can be more than 20kV.
The utility model has the advantages that structure it is simple and novel, operation and it is easy to use and practical；Effective solution is due to radiator
Electrification does not simply fail to integrate three road thyristors to install, but also need to increase insulating support, increases equipment volume；Coal
It is explosion-proof tank that the specific work environments such as mine, which require apparatus casing, is accumulated in the cabinet of equipment in this way, will result in heat, heat
The problems such as can not shedding at all, reducing its service life, increase work risk factor.
Claims (5)
1. a kind of thyristor module component, including heat-sink unit, thyristor circuit unit and insulating unit, it is characterised in that:
The heat-sink unit include lower radiator (1), upper radiator (11) and lower radiator (1) is connect with upper radiator (11) from
And compress the fastening bolt (10) of in-between component；The thyristor circuit unit includes under being in above lower radiator (1)
Electrode (3), the first chip (2) for being connected to lower electrode (3) upper end and the second cathode briquetting (5) are connected on the first chip (2)
The first cathode briquetting (14), be connected between the first cathode briquetting (14) and upper radiator (11) the first conducting block (12),
The second chip (15) for being connected on the second cathode briquetting (5) is connected between the second chip (15) and upper radiator (11)
Second conducting block (16), and the top electrode (13) being electrically connected with upper radiator (11)；The insulating unit includes insulation colloid
(4), insulation shell (7), insulating ceramics (6), insulating sleeve (8), insulating part (9), wherein the insulating cement body (4) is wrapped in certainly
First conducting block (12) and the second conducting block (16) middle and lower part begin to pass through the first cathode briquetting (14), the second chip (15),
One chip (2), the second cathode briquetting (5), lower electrode (3) to lower radiator (1) upper surface, insulate colloid (4) lateral outer side
It is wrapped up by insulation shell (7), the gap between lower electrode (3) and lower radiator (1) is filled by insulating ceramics (6), the lower electricity
There is bent angle exposed portion to be isolated by insulating part (9) in the left side of pole (3), and the insulation is socketed on the outside of the fastening bolt (10)
Casing (8).
2. a kind of thyristor module component as described in claim 1, it is characterised in that: the insulating ceramics (6) is using nitridation
Aluminium ceramics are made, and the Boundary filling of insulating ceramics (6) substrate insulate colloid (4), and the thickness of insulating ceramics (6) is more than or equal to
1.0mm, it is less than or equal to 2mm.
3. a kind of thyristor module component as described in claim 1, it is characterised in that: first conducting block (12) and second
Conducting block (16) is conductive copper billet made of copper.
4. a kind of thyristor module component as described in claim 1, it is characterised in that: the lower radiator (1) uses aluminium sheet
Or copper sheet is made.
5. a kind of thyristor module component as claimed in claim 2, it is characterised in that: the insulation colloid (4) is solidifying using silicon
Glue or silicon rubber are made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810970676.1A CN109003965B (en) | 2018-08-24 | 2018-08-24 | Thyristor module assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810970676.1A CN109003965B (en) | 2018-08-24 | 2018-08-24 | Thyristor module assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109003965A true CN109003965A (en) | 2018-12-14 |
| CN109003965B CN109003965B (en) | 2023-12-08 |
Family
ID=64594293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810970676.1A Active CN109003965B (en) | 2018-08-24 | 2018-08-24 | Thyristor module assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109003965B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111681995A (en) * | 2020-04-29 | 2020-09-18 | 株洲中车时代半导体有限公司 | Thyristor element, thyristor element assembly structure and soft starter |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202633265U (en) * | 2012-06-12 | 2012-12-26 | 湖北台基半导体股份有限公司 | High-dielectric voltage-withstanding power semiconductor module |
| CN203674207U (en) * | 2014-01-17 | 2014-06-25 | 温州谐能电力科技有限公司 | Thyristor welding crimping assembly |
| JP2014127538A (en) * | 2012-12-26 | 2014-07-07 | Meidensha Corp | Semiconductor module |
| CN105633025A (en) * | 2014-10-31 | 2016-06-01 | 湖北台基半导体股份有限公司 | High insulation and voltage resistance power semiconductor module |
| CN207009436U (en) * | 2017-05-12 | 2018-02-13 | 苏州汇川联合动力系统有限公司 | Power model and electric machine controller |
| CN208781843U (en) * | 2018-08-24 | 2019-04-23 | 齐齐哈尔齐力达电子有限公司 | Thyristor module component |
-
2018
- 2018-08-24 CN CN201810970676.1A patent/CN109003965B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202633265U (en) * | 2012-06-12 | 2012-12-26 | 湖北台基半导体股份有限公司 | High-dielectric voltage-withstanding power semiconductor module |
| JP2014127538A (en) * | 2012-12-26 | 2014-07-07 | Meidensha Corp | Semiconductor module |
| CN203674207U (en) * | 2014-01-17 | 2014-06-25 | 温州谐能电力科技有限公司 | Thyristor welding crimping assembly |
| CN105633025A (en) * | 2014-10-31 | 2016-06-01 | 湖北台基半导体股份有限公司 | High insulation and voltage resistance power semiconductor module |
| CN207009436U (en) * | 2017-05-12 | 2018-02-13 | 苏州汇川联合动力系统有限公司 | Power model and electric machine controller |
| CN208781843U (en) * | 2018-08-24 | 2019-04-23 | 齐齐哈尔齐力达电子有限公司 | Thyristor module component |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111681995A (en) * | 2020-04-29 | 2020-09-18 | 株洲中车时代半导体有限公司 | Thyristor element, thyristor element assembly structure and soft starter |
| CN111681995B (en) * | 2020-04-29 | 2022-09-09 | 株洲中车时代半导体有限公司 | Thyristor element, thyristor element assembly structure and soft starter |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109003965B (en) | 2023-12-08 |
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