CN202856635U - Hermetically metal-sealed three-phase bridge type rectification module - Google Patents
Hermetically metal-sealed three-phase bridge type rectification module Download PDFInfo
- Publication number
- CN202856635U CN202856635U CN2012204231976U CN201220423197U CN202856635U CN 202856635 U CN202856635 U CN 202856635U CN 2012204231976 U CN2012204231976 U CN 2012204231976U CN 201220423197 U CN201220423197 U CN 201220423197U CN 202856635 U CN202856635 U CN 202856635U
- Authority
- CN
- China
- Prior art keywords
- phase bridge
- electrode terminal
- housing
- sealed
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
- H01L2224/411—Disposition
- H01L2224/4111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/41113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging straps
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Rectifiers (AREA)
Abstract
Disclosed is a hermetically metal-sealed three-phase bridge type rectification module, comprising a housing and a three-phase bridge rectifier circuit arranged inside the housing, wherein the three-phase bridge rectifier circuit is a three phase bridge circuit formed by connecting semiconductor rectifier diode chips; the housing is provided with a three-phase AC input terminal, a DC output positive electrode terminal, and a DC output negative electrode terminal; the housing, as a hermetically metal-sealed housing, is internally provided with a base plate; the three-phase bridge rectifier circuit is installed upon the inner wall of the housing via the base plate; the surface of the base plate is provided with an insulating layer; and the three-phase AC input terminal, the DC output positive electrode terminal, and the DC output negative electrode terminal are respectively sealed with the housing via ceramic insulators. The hermetically metal-sealed three-phase bridge type rectification module adopts a metal hermetically sealed housing and employs the tungsten copper and beryllia as the flooring material. The hermetically metal-sealed three-phase bridge type rectification module features great current capacity, and excellent insulating and heat conduction performance between the chips and the base plate. As the ceramic insulator is utilized for the sealing connection with the housing, the hermetically metal-sealed three-phase bridge type rectification module features high reliability and great overloading capacity and makes the product have high temperature resistance performance and be capable of standing sharp hot and cold changes.
Description
Technical field
The utility model relates to field of power electronics, specifically, relates to a kind of semiconductor three-phase bridge commutating module.
Background technology
At present, the semiconductor three-phase bridge commutating module of domestic use adopts plastic package structure mostly, volume ratio is larger, and be connected by glass insulator between three-phase alternating current input and dc output end and the plastic casing, the in use bending of lead-in wire easily causes the glass collision cleft, finally causes housing seal to be lost efficacy, and bearing capacity is low, insulation and heat conductivility are poor, and reliability is low.
The utility model content
The purpose of this utility model is the insulation that exists for existing three-phase bridge commutating module and heat conductivility is poor, poor reliability, etc. the problems referred to above, a kind of insulation and good heat conductivity, reliability is high and overload capacity the is strong hermetically sealed three-phase bridge commutating module of metal are provided.
The technical solution of the utility model is: the hermetically sealed three-phase bridge commutating module of a kind of metal, this rectification module comprises shell and is encapsulated in the interior three-phase bridge rectifier circuit of housing, the three-phase bridge circuit of three-phase bridge rectifier circuit for being formed by connecting by the semiconductor rectifier diode chip, be provided with the three-phase alternating current input terminal on the shell, direct current output positive electrode terminal and direct current output negative electrode terminal, shell is the all-sealed housing of metal, be provided with base plate in the housing, three-phase bridge rectifier circuit is installed on the inwall of shell by base plate, the surface of base plate is provided with insulating barrier, the three-phase alternating current input terminal, direct current output positive electrode terminal and direct current output negative electrode terminal carry out sealing-in by ceramic insulator and shell respectively.
Preferably, the three-phase alternating current input terminal is arranged on the front side wall of shell, direct current output positive electrode terminal and direct current output negative electrode terminal are separately positioned on the left and right sidewall of shell, and the external lead wire of the external lead wire of three-phase alternating current input terminal and direct current output positive electrode terminal and direct current output negative electrode terminal is the T-shape structure.
Preferably, the metal plate of base plate for being made as material take tungsten copper and beryllium oxide.
Preferably, the insulator layer of insulating barrier for being made take beryllium oxide as material.
The beneficial effects of the utility model are: the utility model volume is little, easy for installation, adopt the hermetically sealed shell of metal, take tungsten copper and beryllium oxide as flooring material, improved current capacity, satisfy output current 50A, adopting simultaneously the beryllium oxide of high thermal conductivity is the material of insulating barrier, has realized insulation good between chip and the base plate and heat conductivility; Three-phase alternating current input terminal, direct current output positive electrode terminal and direct current output negative electrode terminal all carry out sealing-in by ceramic insulator and shell, insulation voltage reaches 2000V, reliability is high, and external lead wire is the T-shape structure, strengthened the releasing area, improved the lead-in wire ampacity, overload capacity is high, makes the product can be high temperature resistant and stand larger cold and hot great change.
Description of drawings
Accompanying drawing 1 is the structural representation of the utility model embodiment.
Accompanying drawing 2 is the end view of the utility model embodiment.
Accompanying drawing 3 is the circuit theory diagrams of the utility model embodiment
Embodiment
The utility model is described in further detail below in conjunction with accompanying drawing.
Shown in Fig. 1 to 2, the hermetically sealed three-phase bridge commutating module of a kind of metal, this rectification module comprises shell 1 and is encapsulated in the interior three-phase bridge rectifier circuit of housing, the three-phase bridge circuit of three-phase bridge rectifier circuit for being formed by connecting by semiconductor rectifier diode chip 2, be provided with three-phase alternating current input terminal 3, direct current output positive electrode terminal 4 and direct current output negative electrode terminal 5 on the shell 1, shell 1 is the all-sealed housing of metal, be provided with base plate 6 in the housing, base plate 6 metal plate for being made as material take tungsten copper and beryllium oxide.Three-phase bridge rectifier circuit is installed in by base plate on the inwall of shell 1, and the surface of base plate 6 is provided with insulating barrier 7, the insulator layer of insulating barrier 7 for being made take beryllium oxide as material.
Three-phase alternating current input terminal 3, direct current output positive electrode terminal 4 and direct current output negative electrode terminal 5 carry out sealing-in by ceramic insulator 8 and shell 1 respectively.Three-phase alternating current input terminal 3 is arranged on the front side wall of shell 1, direct current output positive electrode terminal 4 and direct current output negative electrode terminal 5 are separately positioned on the left and right sidewall of shell, and the external lead wire of the external lead wire of three-phase alternating current input terminal 3 and direct current output positive electrode terminal 4 and direct current output negative electrode terminal 5 is the T-shape structure.
The key technical indexes of the utility model rectification module product and the contrast of same kind of products at abroad technical indicator see Table one.
Table one
Claims (4)
1. hermetically sealed three-phase bridge commutating module of metal, this rectification module comprises shell and is encapsulated in the interior three-phase bridge rectifier circuit of housing, the three-phase bridge circuit of three-phase bridge rectifier circuit for being formed by connecting by the semiconductor rectifier diode chip, be provided with the three-phase alternating current input terminal on the shell, direct current output positive electrode terminal and direct current output negative electrode terminal, it is characterized in that: shell is the all-sealed housing of metal, be provided with base plate in the housing, three-phase bridge rectifier circuit is installed on the inwall of shell by base plate, the surface of base plate is provided with insulating barrier, the three-phase alternating current input terminal, direct current output positive electrode terminal and direct current output negative electrode terminal carry out sealing-in by ceramic insulator and shell respectively.
2. the hermetically sealed three-phase bridge commutating module of metal according to claim 1, it is characterized in that: the three-phase alternating current input terminal is arranged on the front side wall of shell, direct current output positive electrode terminal and direct current output negative electrode terminal are separately positioned on the left and right sidewall of shell, and the external lead wire of the external lead wire of three-phase alternating current input terminal and direct current output positive electrode terminal and direct current output negative electrode terminal is the T-shape structure.
3. the hermetically sealed three-phase bridge commutating module of metal according to claim 1 is characterized in that: the metal plate of base plate for being made as material take tungsten copper and beryllium oxide.
4. the hermetically sealed three-phase bridge commutating module of metal according to claim 1 is characterized in that: the insulator layer of insulating barrier for being made take beryllium oxide as material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012204231976U CN202856635U (en) | 2012-08-24 | 2012-08-24 | Hermetically metal-sealed three-phase bridge type rectification module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012204231976U CN202856635U (en) | 2012-08-24 | 2012-08-24 | Hermetically metal-sealed three-phase bridge type rectification module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202856635U true CN202856635U (en) | 2013-04-03 |
Family
ID=47987782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012204231976U Expired - Fee Related CN202856635U (en) | 2012-08-24 | 2012-08-24 | Hermetically metal-sealed three-phase bridge type rectification module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202856635U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105811787A (en) * | 2016-05-18 | 2016-07-27 | 珠海格力电器股份有限公司 | Full-sealed current conversion assembly |
| CN110622407A (en) * | 2017-05-15 | 2019-12-27 | 西门子交通有限公司 | Semiconductor switch device |
| CN113824337A (en) * | 2021-09-16 | 2021-12-21 | 捷捷半导体有限公司 | Three-phase rectifier module and manufacturing method thereof |
-
2012
- 2012-08-24 CN CN2012204231976U patent/CN202856635U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105811787A (en) * | 2016-05-18 | 2016-07-27 | 珠海格力电器股份有限公司 | Full-sealed current conversion assembly |
| CN110622407A (en) * | 2017-05-15 | 2019-12-27 | 西门子交通有限公司 | Semiconductor switch device |
| CN110622407B (en) * | 2017-05-15 | 2021-08-10 | 西门子交通有限公司 | Semiconductor switch device |
| US11424690B2 (en) | 2017-05-15 | 2022-08-23 | Siemens Mobility GmbH | Semiconductor switching arrangement |
| CN113824337A (en) * | 2021-09-16 | 2021-12-21 | 捷捷半导体有限公司 | Three-phase rectifier module and manufacturing method thereof |
| CN113824337B (en) * | 2021-09-16 | 2023-12-12 | 捷捷半导体有限公司 | Three-phase rectifying module and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102821586B (en) | Liquid-cooled motor controller | |
| JP5828119B2 (en) | Resin-sealed capacitor | |
| CN202856635U (en) | Hermetically metal-sealed three-phase bridge type rectification module | |
| CN110416187B (en) | Novel crimping type IGBT (insulated gate bipolar transistor) internal packaging structure | |
| CN202888185U (en) | Flat packaging crimping type outlet electrode insulated gate bipolar transistor element | |
| CN204680661U (en) | Module is surrounded in igbt chip heat radiation | |
| CN203481216U (en) | Three-phase full-bridge fast-recovery rectifier module | |
| CN206099739U (en) | IGBT half -bridge circuit | |
| CN104465605A (en) | Semiconductor chip packaging structure | |
| CN204204849U (en) | A kind of chip-packaging structure | |
| CN204886715U (en) | Compatible rectifier bridge heap of single -phase three -phase cut straightly | |
| CN206774688U (en) | Integrated busbar joint | |
| CN207967866U (en) | A kind of air-insulated type enclosed busbar slot | |
| CN201117653Y (en) | Ultrafast recovery diode | |
| CN102315613B (en) | Three-phase monomer solid-seal insulated bus flange assembly | |
| CN207010557U (en) | A kind of novel bridge type rectification module | |
| CN205993047U (en) | Low resistance compact electronic switch module | |
| CN203423159U (en) | High-power ceramic package IGBT (insulated gate bipolar transistor) efficient two-sided refrigerating integral tube shell | |
| CN203536478U (en) | Power NI-MH (nickel-metal hydride) battery | |
| CN204204845U (en) | A kind of semiconductor chip package | |
| CN203071829U (en) | Thyristor phase-controlled rectifier power module with turn-off circuit | |
| CN207217509U (en) | A kind of radiator structure of chip diode | |
| CN203398095U (en) | Housing of metal-ceramic packaging diode | |
| CN203536415U (en) | Thyristor module device | |
| CN218333755U (en) | High power density's little equipment chip power |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130403 Termination date: 20150824 |
|
| EXPY | Termination of patent right or utility model |